JP6760627B2 - カルコゲナイドガラス組成物およびカルコゲナイドスイッチデバイス - Google Patents
カルコゲナイドガラス組成物およびカルコゲナイドスイッチデバイス Download PDFInfo
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- JP6760627B2 JP6760627B2 JP2017540640A JP2017540640A JP6760627B2 JP 6760627 B2 JP6760627 B2 JP 6760627B2 JP 2017540640 A JP2017540640 A JP 2017540640A JP 2017540640 A JP2017540640 A JP 2017540640A JP 6760627 B2 JP6760627 B2 JP 6760627B2
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- 239000000203 mixture Substances 0.000 title claims description 94
- 239000005387 chalcogenide glass Substances 0.000 title claims description 30
- 150000004770 chalcogenides Chemical class 0.000 title description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 19
- 229910052732 germanium Inorganic materials 0.000 claims description 18
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 17
- 239000011669 selenium Substances 0.000 claims description 11
- 229910052711 selenium Inorganic materials 0.000 claims description 10
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 9
- 229910052785 arsenic Inorganic materials 0.000 claims description 9
- 230000009477 glass transition Effects 0.000 claims description 9
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 238000004891 communication Methods 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 10
- 230000008859 change Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229920000742 Cotton Polymers 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000012777 electrically insulating material Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000010295 mobile communication Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- 239000011188 CEM-1 Substances 0.000 description 1
- 239000011190 CEM-3 Substances 0.000 description 1
- 101100257127 Caenorhabditis elegans sma-2 gene Proteins 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/32—Non-oxide glass compositions, e.g. binary or ternary halides, sulfides or nitrides of germanium, selenium or tellurium
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/32—Non-oxide glass compositions, e.g. binary or ternary halides, sulfides or nitrides of germanium, selenium or tellurium
- C03C3/321—Chalcogenide glasses, e.g. containing S, Se, Te
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
- H10B63/24—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the Ovonic threshold switching type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Organic Chemistry (AREA)
- Semiconductor Memories (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Glass Compositions (AREA)
Description
この出願は、発明の名称が「カルコゲナイドガラス組成物およびカルコゲナイドスイッチデバイス」である2015年3月20日出願の米国特許出願第14/664,745号の優先権を主張し、ここに全ての目的のためにその全体が参照により本明細書に組み込まれる。
本開示の複数の実施形態は、概して、集積回路の分野に関し、より詳細には、閾値スイッチ用のカルコゲナイドガラス組成物に関する。
背景技術
カルコゲナイドガラス組成物は、半導体メモリデバイスを含むカルコゲナイドスイッチデバイスに用いられる。これらの組成物は、概して、導電性になる閾値電圧を有し、すなわち、それらは電流がスイッチを通って流れることを可能にするようスイッチをオンにする。閾値電圧は時間と共に変化し得る。この変化はドリフトと称される。高ドリフトの組成物はカルコゲナイドスイッチを用いるデバイスの有用性および性能を限定し得る。
Claims (8)
- カルコゲナイドガラスの組成物であって、
前記組成物の総重量に対して8重量%から12重量%の範囲内のシリコン、
前記組成物の前記総重量に対して9重量%から12重量%の範囲内のゲルマニウム、
前記組成物の前記総重量に対して49重量%より大きい量のセレン、および、
前記組成物の前記総重量に対して29重量%から31重量%の範囲内のヒ素
から成る、
カルコゲナイドガラス組成物。 - 前記セレンは、前記組成物の前記総重量に対して50重量%より大きい量である、
請求項1に記載のカルコゲナイドガラス組成物。 - 前記シリコンと前記ゲルマニウムとの合計は、前記組成物の前記総重量に対して20重量%以上である、
請求項1または2に記載のカルコゲナイドガラス組成物。 - ガラス転移温度は、300℃より大きい、
請求項1から3のいずれか一項に記載のカルコゲナイドガラス組成物。 - 第1の電極と、
第2の電極と、
前記第1の電極および前記第2の電極の間で結合されたセレクタスイッチと、
を備える装置であって、
前記セレクタスイッチは、請求項1から4のいずれか一項に記載のカルコゲナイドガラス組成物を含むカルコゲナイドガラスを有する、
装置。 - ビット線電極と、
ワード線電極と、
メモリセルと、
を備える
メモリデバイスであって、
前記ワード線電極はクロスポイントで前記ビット線電極と交差し、
前記メモリセルは前記クロスポイントで前記ビット線電極と前記ワード線電極との間で結合され、
前記メモリセルはメモリ素子と前記メモリ素子に結合されたセレクタスイッチとを有し、
前記セレクタスイッチは請求項1から4のいずれか一項に記載のカルコゲナイドガラス組成物を有するカルコゲナイドガラスを含む、
メモリデバイス。 - 回路基板と、
前記回路基板に結合されたダイと、
を備える
システムであって、
前記ダイはメモリデバイスを有し、
前記メモリデバイスはビット線電極とワード線電極とメモリセルとを含み、
前記ワード線電極は、クロスポイントで前記ビット線電極と交差し、
前記メモリセルは、前記クロスポイントで前記ビット線電極と前記ワード線電極との間で結合され、
前記メモリセルは、メモリ素子と前記メモリ素子に結合されたセレクタスイッチとを備え、
前記セレクタスイッチは請求項1から4のいずれか一項に記載のカルコゲナイドガラス組成物を含むカルコゲナイドガラスを有する、
システム。 - 前記システムは、前記回路基板に結合されるアンテナ、ディスプレイ、タッチスクリーンディスプレイ、タッチスクリーンコントローラ、バッテリ、オーディオコーデック、ビデオコーデック、パワーアンプ、全地球測位システム(GPS)デバイス、コンパス、ガイガーカウンタ、加速度計、ジャイロスコープ、スピーカ、またはカメラのうち1つまたは複数を含むモバイルコンピューティングデバイスである、
請求項7に記載のシステム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/664,745 | 2015-03-20 | ||
US14/664,745 US9379321B1 (en) | 2015-03-20 | 2015-03-20 | Chalcogenide glass composition and chalcogenide switch devices |
PCT/US2016/018130 WO2016153634A1 (en) | 2015-03-20 | 2016-02-16 | Chalcogenide glass composition and chalcogenide switch devices |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018515405A JP2018515405A (ja) | 2018-06-14 |
JP6760627B2 true JP6760627B2 (ja) | 2020-09-23 |
Family
ID=56136492
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017540640A Active JP6760627B2 (ja) | 2015-03-20 | 2016-02-16 | カルコゲナイドガラス組成物およびカルコゲナイドスイッチデバイス |
Country Status (7)
Country | Link |
---|---|
US (1) | US9379321B1 (ja) |
JP (1) | JP6760627B2 (ja) |
KR (1) | KR101843837B1 (ja) |
BR (1) | BR102016002949B1 (ja) |
DE (1) | DE102016102955B4 (ja) |
TW (1) | TWI572574B (ja) |
WO (1) | WO2016153634A1 (ja) |
Families Citing this family (10)
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DE102014103560A1 (de) | 2013-03-15 | 2014-09-18 | Schott Corporation | Optisches Binden durch die Verwendung von optischem Glas mit niedrigem Erweichungspunkt für optische IR-Anwendungen und gebildete Produkte |
US10889887B2 (en) | 2016-08-22 | 2021-01-12 | Honeywell International Inc. | Chalcogenide sputtering target and method of making the same |
US10163977B1 (en) * | 2017-03-22 | 2018-12-25 | Micron Technology, Inc. | Chalcogenide memory device components and composition |
US10727405B2 (en) | 2017-03-22 | 2020-07-28 | Micron Technology, Inc. | Chalcogenide memory device components and composition |
US10475995B2 (en) | 2017-12-22 | 2019-11-12 | Intel Corporation | Tip-contact controlled three dimensional (3D) vertical self select memory |
US10374009B1 (en) * | 2018-07-17 | 2019-08-06 | Macronix International Co., Ltd. | Te-free AsSeGe chalcogenides for selector devices and memory devices using same |
KR102636534B1 (ko) * | 2018-08-20 | 2024-02-15 | 에스케이하이닉스 주식회사 | 칼코게나이드 재료 및 이를 포함하는 전자 장치 |
KR102635268B1 (ko) * | 2018-08-20 | 2024-02-13 | 에스케이하이닉스 주식회사 | 칼코게나이드 재료 및 이를 포함하는 전자 장치 |
EP3660932A1 (en) * | 2018-11-30 | 2020-06-03 | Micron Technology, INC. | Chalcogenide memory device selector component and composition |
KR102188583B1 (ko) * | 2018-12-03 | 2020-12-09 | 마이크론 테크놀로지, 인크 | 칼코게나이드 메모리 디바이스 컴포넌트들 및 조성물 |
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2015
- 2015-03-20 US US14/664,745 patent/US9379321B1/en active Active
-
2016
- 2016-02-03 TW TW105103541A patent/TWI572574B/zh active
- 2016-02-12 BR BR102016002949-0A patent/BR102016002949B1/pt active IP Right Grant
- 2016-02-16 JP JP2017540640A patent/JP6760627B2/ja active Active
- 2016-02-16 WO PCT/US2016/018130 patent/WO2016153634A1/en active Application Filing
- 2016-02-17 KR KR1020160018535A patent/KR101843837B1/ko active IP Right Grant
- 2016-02-19 DE DE102016102955.6A patent/DE102016102955B4/de active Active
Also Published As
Publication number | Publication date |
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BR102016002949B1 (pt) | 2022-05-17 |
TWI572574B (zh) | 2017-03-01 |
KR20160112938A (ko) | 2016-09-28 |
TW201638035A (zh) | 2016-11-01 |
JP2018515405A (ja) | 2018-06-14 |
KR101843837B1 (ko) | 2018-04-02 |
DE102016102955A1 (de) | 2016-09-22 |
DE102016102955B4 (de) | 2018-10-18 |
WO2016153634A1 (en) | 2016-09-29 |
BR102016002949A2 (pt) | 2016-11-01 |
US9379321B1 (en) | 2016-06-28 |
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