JP6748253B2 - 太陽電池パネル用配線材及びこれを含む太陽電池パネル - Google Patents
太陽電池パネル用配線材及びこれを含む太陽電池パネル Download PDFInfo
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- 230000005484 gravity Effects 0.000 claims description 51
- 238000006243 chemical reaction Methods 0.000 claims description 16
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- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
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- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 239000000565 sealant Substances 0.000 description 3
- 239000002033 PVDF binder Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910008433 SnCU Inorganic materials 0.000 description 2
- 229910007116 SnPb Inorganic materials 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 239000013256 coordination polymer Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
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- 229910052751 metal Inorganic materials 0.000 description 2
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- 229910052759 nickel Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 229920002620 polyvinyl fluoride Polymers 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
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- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
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- 230000003746 surface roughness Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Description
Claims (6)
- 太陽電池を接続する太陽電池パネル用配線材であって、
コア層と、
前記コア層の表面に形成されるソルダー層と、を含み、
前記コア層は、前記コア層の長さ方向に伸びる山部を有し、前記山部から重心へ向かいながら幅が広くなるように、前記山部の両側において傾斜面または丸くなった部分から構成される反射面を有する突出部またはエッジ部を備え、
前記反射面は、第1傾斜反射面及び第2傾斜反射面を含み、
前記コア層は、
ベース面と、
前記ベース面の両側にそれぞれ接続され、前記ベース面から離れながら互いの間の距離が増えるように位置する第1エッジ面及び第2エッジ面と、
前記第1傾斜反射面及び前記第2傾斜反射面を接続し、前記ベース面に平行して前記山部を形成する第3エッジ面と、をさらに備え、
前記第1傾斜反射面及び前記第2傾斜反射面は、前記第1エッジ面及び前記第2エッジ面にそれぞれ接続され、前記ベース面から離れながら互いの間の距離が減少するように互いに反対方向に傾斜する、太陽電池パネル用配線材。 - 前記第1エッジ面の幅、前記第2エッジ面の幅及び前記第3エッジ面の幅は、前記第1傾斜反射面の幅及び前記第2傾斜反射面の幅より小さい、請求項1に記載の太陽電池パネル用配線材。
- 前記第1エッジ面の幅、前記第2エッジ面の幅及び第3エッジ面の幅が第1の幅で互いに同一であり、前記第1傾斜反射面の幅、前記第2傾斜反射面の幅及び前記ベース面の幅が第2の幅で互いに同一である対称構造を有する、請求項2に記載の太陽電池パネル用配線材。
- 前記第1傾斜反射面の幅及び前記第2傾斜反射面の幅に対する、前記第1エッジ面の幅、前記第2エッジ面の幅及び前記第3エッジ面の幅の割合は、0.1ないし0.9である、請求項3に記載の太陽電池パネル用配線材。
- 複数の太陽電池と、
前記複数の太陽電池を接続する配線材と、
を含み、
前記配線材は、コア層及び前記コア層の表面に形成されるソルダー層を含み、
前記コア層は、前記コア層の長さ方向に伸びる山部を有し、前記山部から重心へ向かいながら幅が広くなるように、前記山部の両側において傾斜面または丸くなった部分から構成される反射面を有する突出部またはエッジ部を備え、
前記反射面は、第1傾斜反射面及び第2傾斜反射面を含み、
前記コア層は、
ベース面と、
前記ベース面の両側にそれぞれ接続され、前記ベース面から離れながら互いの間の距離が増えるように位置する第1エッジ面及び第2エッジ面と、
前記第1傾斜反射面及び前記第2傾斜反射面を接続し、前記ベース面に平行して、前記山部を形成する第3エッジ面と、をさらに備え、
前記第1傾斜反射面及び前記第2傾斜反射面は、前記第1エッジ面及び前記第2エッジ面にそれぞれ接続され、前記ベース面から離れながら互いの間の距離が減少するように互いに反対方向に傾斜する、太陽電池パネル。 - 前記太陽電池は、光電変換部及び前記光電変換部上に形成され、前記配線材が付着されるパッド部を含む電極を含み、
前記ベース面は、前記パッド部に隣接し、
前記第1エッジ面の幅、前記第2エッジ面の幅及び第3エッジ面の幅は、前記第1傾斜反射面の幅及び前記第2傾斜反射面の幅より小さく、
前記ソルダー層は、
前記第3エッジ面と前記第1傾斜反射面及び前記第2傾斜反射面を覆いながら丸くなるように形成される第1部分と、
前記第1エッジ面、前記第2エッジ面及び前記ベース面が位置した部分に形成され、前記第1部分より外側に突出する形状を有する第2部分と、を含む、請求項5に記載の太陽電池パネル。
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
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KR10-2018-0033238 | 2018-03-22 | ||
KR20180033238 | 2018-03-22 | ||
KR10-2018-0066909 | 2018-06-11 | ||
KR20180066909 | 2018-06-11 | ||
KR10-2019-0029419 | 2019-03-14 | ||
KR1020190029419A KR102192443B1 (ko) | 2018-03-22 | 2019-03-14 | 태양 전지 패널용 배선재 및 이를 포함하는 태양 전지 패널 |
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JP2019169711A JP2019169711A (ja) | 2019-10-03 |
JP6748253B2 true JP6748253B2 (ja) | 2020-08-26 |
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Country Status (4)
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US (1) | US11164984B2 (ja) |
EP (1) | EP3544062A1 (ja) |
JP (1) | JP6748253B2 (ja) |
CN (1) | CN110311002B (ja) |
Families Citing this family (10)
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AU2020265452A1 (en) * | 2019-05-02 | 2021-12-02 | Longi Green Energy Technology Co., Ltd. | A structured connector for interconnecting device components |
CN110854230A (zh) * | 2019-11-01 | 2020-02-28 | 上海晶澳太阳能科技有限公司 | 一种焊带、太阳能电池组件及其制备方法 |
CN111223953A (zh) * | 2019-11-29 | 2020-06-02 | 英利能源(中国)有限公司 | 一种反光焊带、光伏组件及制备方法 |
US11545591B2 (en) * | 2019-12-12 | 2023-01-03 | Hamad Musabeh Ahmed Saif Alteneiji | Light trapping dynamic photovoltaic module |
CN111244215A (zh) * | 2020-01-15 | 2020-06-05 | 西安泰力松新材料股份有限公司 | 一种正多边形光伏焊带及其制备方法 |
EP4102577A1 (en) | 2021-06-09 | 2022-12-14 | Meyer Burger (Switzerland) AG | Improved parallel solar cell string assemblies for use in a photovoltaic module |
DE102021114906B4 (de) | 2021-06-09 | 2023-10-12 | Institut Für Solarenergieforschung Gmbh | Solarmodul mit optimierter verschaltung sowie verfahren zum fertigen desselben |
CN113707738A (zh) | 2021-08-25 | 2021-11-26 | 上海晶科绿能企业管理有限公司 | 一种焊带以及电池片组件 |
CN114823961A (zh) | 2022-06-27 | 2022-07-29 | 浙江晶科能源有限公司 | 光伏组件结构 |
CN115139015A (zh) * | 2022-06-27 | 2022-10-04 | 晶科能源股份有限公司 | 一种光伏电池的焊接方法及光伏组件 |
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2019
- 2019-03-21 EP EP19164327.9A patent/EP3544062A1/en active Pending
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