JP6734193B2 - ディテクタアレイ及び方法 - Google Patents
ディテクタアレイ及び方法 Download PDFInfo
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- JP6734193B2 JP6734193B2 JP2016543474A JP2016543474A JP6734193B2 JP 6734193 B2 JP6734193 B2 JP 6734193B2 JP 2016543474 A JP2016543474 A JP 2016543474A JP 2016543474 A JP2016543474 A JP 2016543474A JP 6734193 B2 JP6734193 B2 JP 6734193B2
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- 239000013078 crystal Substances 0.000 claims description 145
- 238000003384 imaging method Methods 0.000 claims description 16
- 208000013201 Stress fracture Diseases 0.000 claims description 15
- 238000010329 laser etching Methods 0.000 claims description 11
- 230000000750 progressive effect Effects 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
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- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 238000003491 array Methods 0.000 claims 3
- 125000002057 carboxymethyl group Chemical group [H]OC(=O)C([H])([H])[*] 0.000 claims 2
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- 238000002600 positron emission tomography Methods 0.000 description 15
- 239000000463 material Substances 0.000 description 12
- 230000005855 radiation Effects 0.000 description 9
- 238000002603 single-photon emission computed tomography Methods 0.000 description 9
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- 238000001514 detection method Methods 0.000 description 6
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- 239000004810 polytetrafluoroethylene Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- XKUYOJZZLGFZTC-UHFFFAOYSA-K lanthanum(iii) bromide Chemical compound Br[La](Br)Br XKUYOJZZLGFZTC-UHFFFAOYSA-K 0.000 description 3
- 239000012217 radiopharmaceutical Substances 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 229910052765 Lutetium Inorganic materials 0.000 description 2
- ANDNPYOOQLLLIU-UHFFFAOYSA-N [Y].[Lu] Chemical compound [Y].[Lu] ANDNPYOOQLLLIU-UHFFFAOYSA-N 0.000 description 2
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- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 229940121896 radiopharmaceutical Drugs 0.000 description 2
- 230000002799 radiopharmaceutical effect Effects 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 238000012879 PET imaging Methods 0.000 description 1
- OSGMVZPLTVJAFX-UHFFFAOYSA-N [Gd].[Lu] Chemical compound [Gd].[Lu] OSGMVZPLTVJAFX-UHFFFAOYSA-N 0.000 description 1
- BEJKBIUCSXGNBU-UHFFFAOYSA-N [Y].[Gd].[Lu] Chemical compound [Y].[Gd].[Lu] BEJKBIUCSXGNBU-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
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- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
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- 239000011888 foil Substances 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2002—Optical details, e.g. reflecting or diffusing layers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20185—Coupling means between the photodiode and the scintillator, e.g. optical couplings using adhesives with wavelength-shifting fibres
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20183—Arrangements for preventing or correcting crosstalk, e.g. optical or electrical arrangements for correcting crosstalk
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20187—Position of the scintillator with respect to the photodiode, e.g. photodiode surrounding the crystal, the crystal surrounding the photodiode, shape or size of the scintillator
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- General Physics & Mathematics (AREA)
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- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
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- Theoretical Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Evolutionary Computation (AREA)
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- Measurement Of Radiation (AREA)
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- Conversion Of X-Rays Into Visible Images (AREA)
- Nuclear Medicine (AREA)
Description
Claims (15)
- イメージングシステムのためのディテクタアレイであって:
複数のシンチレータ結晶を配列したアレイであって、各々のシンチレータ結晶は、複数の側面を有し、各シンチレータ結晶は、前記複数の側面のうち少なくとも1つの側面の少なくとも一部分に形成された、光を拡散反射するためのマイクロフラクチャのパターンを有する、アレイ;及び
シンチレータ結晶の前記アレイに光学的に結合されたフォトディテクタのアレイ;
を有し、前記マイクロフラクチャのパターンを有する側面において、マイクロフラクチャが形成された部分は、マイクロフラクチャが形成されていない部分に隣接している、ディテクタアレイ。 - 前記パターンを有する側面において、前記マイクロフラクチャが形成された部分と前記マイクロフラクチャが形成されていない部分とが交互に配置されている、請求項1に記載のディテクタアレイ。
- 前記シンチレータ結晶のうち前記パターンを有する側面が前記シンチレータ結晶のうちの長い面であり、前記長い面は、前記シンチレータ結晶の一方端と前記フォトディテクタに光学的に結合される前記シンチレータ結晶の他方端との間に伸びる、請求項1又は2に記載のディテクタアレイ。
- 各々のシンチレータ結晶のうち単独の側面のみが前記パターンを有する、請求項1ないし3のうち何れか1項に記載のディテクタアレイ。
- 前記シンチレータ結晶の少なくとも1つの側面が、漸進的なパターン、斜交パターン、斜線パターン、ハニカムパターン又はグラデーションパターンのうちの何れかのパターンを有する、請求項1ないし4のうちの何れか1項に記載のディテクタアレイ。
- 前記少なくとも1つの側面が、前記シンチレータ結晶の一方端の近くでは多くのマイクロフラクチャが形成されたパターンを有し及び前記シンチレータ結晶の他方端の近くでは少ないマイクロフラクチャが形成されたパターンを有する、請求項1ないし5のうちの何れか1項に記載のディテクタアレイ。
- 各々のシンチレータ結晶は拡散反射コーティングでカバーされている、請求項1ないし6のうちの何れか1項に記載のディテクタアレイ。
- 前記フォトディテクタはシリコンフォトダイオード(SiPM)を含む、請求項1ないし7のうちの何れか1項に記載のディテクタアレイ。
- 請求項1ないし8のうち何れか1項に記載のディテクタアレイ複数個;
前記フォトディテクタからの出力信号を画像に再構築する再構築プロセッサ;及び
再構築された画像を表示するディスプレイ装置;
を有する核スキャナ。 - 研磨された複数のシンチレータ結晶各々の少なくとも1つの側面の少なくとも一部分をレーザエッチングするステップ;
前記複数のシンチレータ結晶に複数のフォトディテクタを光学的に結合するステップ;
を有し、前記レーザエッチングされたパターンを有する側面において、光を拡散反射するためのマイクロフラクチャが形成された部分は、マイクロフラクチャが形成されていない部分に隣接している、方法。 - 前記レーザエッチングするステップは、前記シンチレータ結晶の表面直下にマイクロフラクチャを作成する、請求項10に記載の方法。
- 前記シンチレータ結晶各々のレーザエッチングは、前記シンチレータ結晶の一方端と前記フォトディテクタに光学的に結合される前記シンチレータ結晶の他方端との間に伸びる長い側面をレーザエッチングすることを含む、請求項10又は11に記載の方法。
- 前記シンチレータ結晶各々の側面が、当該側面における、漸進的なパターン、斜交パターン、斜線パターン、ハニカムパターン又はグラデーションパターンをエッチングすることを含む、請求項10ないし12のうちの何れか1項に記載の方法。
- 拡散反射層で各々のシンチレータ結晶をカバーするステップ;及び
前記拡散反射層でカバーされたシンチレータ結晶をアレイに構成するステップ;
を更に含む、請求項11ないし13のうち何れか1項に記載の方法。 - 各々のシンチレータ結晶の単独の側面をレーザエッチングするステップを更に含む、請求項10ないし14のうち何れか1項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US201361879269P | 2013-09-18 | 2013-09-18 | |
US61/879,269 | 2013-09-18 | ||
PCT/IB2014/064388 WO2015040527A1 (en) | 2013-09-18 | 2014-09-10 | Laser etched scintillation crystals for increased performance |
Publications (2)
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JP2016534369A JP2016534369A (ja) | 2016-11-04 |
JP6734193B2 true JP6734193B2 (ja) | 2020-08-05 |
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JP2016543474A Active JP6734193B2 (ja) | 2013-09-18 | 2014-09-10 | ディテクタアレイ及び方法 |
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US (1) | US10101470B2 (ja) |
EP (1) | EP3047308B1 (ja) |
JP (1) | JP6734193B2 (ja) |
CN (1) | CN105556341B (ja) |
RU (1) | RU2676798C2 (ja) |
WO (1) | WO2015040527A1 (ja) |
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CN107272043B (zh) * | 2017-06-05 | 2019-06-04 | 中派科技(深圳)有限责任公司 | 检测器和具有该检测器的发射成像设备 |
CN108614286A (zh) * | 2018-05-14 | 2018-10-02 | 中国科学院高能物理研究所 | 一种具有三维位置分辨能力的闪烁探测方法 |
CN110007332B (zh) * | 2019-04-28 | 2023-11-28 | 沈阳智核医疗科技有限公司 | 晶体阵列、探测器、医疗检测设备及晶体阵列的制造方法 |
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2014
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US10101470B2 (en) | 2018-10-16 |
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CN105556341A (zh) | 2016-05-04 |
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