JP6707278B2 - Grinding wheel and method for grinding workpiece - Google Patents

Grinding wheel and method for grinding workpiece Download PDF

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JP6707278B2
JP6707278B2 JP2015174807A JP2015174807A JP6707278B2 JP 6707278 B2 JP6707278 B2 JP 6707278B2 JP 2015174807 A JP2015174807 A JP 2015174807A JP 2015174807 A JP2015174807 A JP 2015174807A JP 6707278 B2 JP6707278 B2 JP 6707278B2
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grinding
wheel
workpiece
grinding wheel
wheel base
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JP2017047520A (en
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徳人 不破
徳人 不破
真史 小山
真史 小山
山下　真司
真司 山下
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Disco Corp
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Disco Corp
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Priority to KR1020160103643A priority patent/KR102443360B1/en
Priority to CN201610795577.5A priority patent/CN106505012B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/463—Mechanical treatment, e.g. grinding, ultrasonic treatment

Description

本発明は、板状の被加工物を研削する際に用いられる研削ホイール、及び当該研削ホイールを用いた被加工物の研削方法に関する。 The present invention relates to a grinding wheel used when grinding a plate-shaped workpiece, and a method for grinding a workpiece using the grinding wheel.

ＬＥＤ（Light Emitting Diode）等の光デバイスを含むデバイスチップを製造する際には、機械的・熱的特性及び化学的安定性に優れたサファイア基板を使用するのが一般的である。サファイア基板は、例えば、表面の分割予定ライン（ストリート）で区画される各領域に光デバイスとなる発光層等が形成された後に、分割予定ラインに沿ってレーザー光線を照射され、分割の起点となる改質層が形成される。 When manufacturing a device chip including an optical device such as an LED (Light Emitting Diode), it is common to use a sapphire substrate having excellent mechanical/thermal characteristics and chemical stability. The sapphire substrate, for example, becomes a starting point of division by being irradiated with a laser beam along the division line after a light emitting layer or the like to be an optical device is formed in each region divided by the division line (street) on the surface. A modified layer is formed.

改質層が形成されたサファイア基板は、例えば、裏面側を研削されて薄化され、また、研削時の応力等によって、各光デバイスに対応する複数のデバイスチップへと分割される。分割後のデバイスチップは、携帯電話機をはじめとする電子機器や、各種の照明器具等に組み込まれる。 The sapphire substrate on which the modified layer is formed is, for example, ground on the back surface side to be thinned, and is divided into a plurality of device chips corresponding to each optical device due to stress during grinding or the like. The divided device chip is incorporated into electronic equipment such as a mobile phone, various lighting fixtures, and the like.

上述したサファイア基板の研削は、例えば、回転軸となるスピンドルの先端部に研削ホイールが装着された研削装置を用いて実施される（例えば、特許文献１，２参照）。研削ホイールは、円盤状のホイール基台を備えており、ホイール基台の下面側には、研削用の複数の砥石（研削砥石）が環状に配列されている。 The above-described grinding of the sapphire substrate is performed using, for example, a grinding device in which a grinding wheel is attached to the tip of a spindle that serves as a rotating shaft (see, for example, Patent Documents 1 and 2). The grinding wheel includes a disk-shaped wheel base, and a plurality of grinding wheels (grinding wheels) for grinding are annularly arranged on the lower surface side of the wheel base.

特開２０１１−２９３３１号公報JP, 2011-29331, A 特開２０１１−４０６３１号公報JP, 2011-40631, A

ところが、上述した研削ホイールを用いると、サファイア基板の周縁領域より中央領域で研削量が多くなって、平坦性が低下し易い。本発明はかかる問題点に鑑みてなされたものであり、その目的とするところは、被加工物をより平坦に研削できる研削ホイール、及びこの研削ホイールを用いた被加工物の研削方法を提供することである。 However, when the above-mentioned grinding wheel is used, the amount of grinding is larger in the central region than in the peripheral region of the sapphire substrate, and the flatness is likely to deteriorate. The present invention has been made in view of the above problems, and an object thereof is to provide a grinding wheel that can grind a work piece more flatly, and a method of grinding a work piece using the grinding wheel. That is.

本発明によれば、サファイア基板、ＳｉＣ基板、半導体ウェーハ、樹脂基板又はセラミックス基板である板状の被加工物を研削するための研削ホイールであって、研削の際に被加工物に対面する第１面を有する円盤状のホイール基台と、該ホイール基台の該第１面に環状に配列される複数の研削砥石と、を備え、該ホイール基台の周方向において隣接する２個の該研削砥石は、該ホイール基台の径方向において異なる位置に配置され、該複数の研削砥石は、研削の際に形成される任意の該研削砥石の軌跡の一部と、別のいずれかの該研削砥石の軌跡の一部と、が重なり、且つ、全ての該研削砥石の軌跡が一体となるように配列され、該複数の研削砥石は、該ホイール基台の径方向の外側から内側に向かって順に配列された複数の第１の研削砥石と、該ホイール基台の径方向の外側から内側に向かって順に配列された複数の第２の研削砥石と、を含み、該ホイール基台の径方向の最も内側に配置されている該第２の研削砥石は、該ホイール基台の径方向の最も外側に配置されている該第１の研削砥石の隣に、該第１の研削砥石よりも該ホイール基台の径方向の内側に配置されていることを特徴とする研削ホイールが提供される。 According to the present invention, there is provided a grinding wheel for grinding a plate-shaped workpiece, which is a sapphire substrate, a SiC substrate, a semiconductor wafer, a resin substrate, or a ceramics substrate, the grinding wheel facing the workpiece during grinding. A disc-shaped wheel base having one surface and a plurality of grinding wheels arranged in a ring on the first surface of the wheel base are provided, and two of the two wheels that are adjacent to each other in the circumferential direction of the wheel base are provided. The grinding wheels are arranged at different positions in the radial direction of the wheel base, and the plurality of grinding wheels are separated from a part of a trajectory of any of the grinding wheels formed during grinding and another one of the paths. a part of the trajectory of the grinding wheel, overlap, and, the locus of all the grinding whetstone arranged as integral preparative ing grinding wheel wherein the plurality of inwardly from the outside of the wheel base of the radial A plurality of first grinding wheels that are sequentially arranged toward each other, and a plurality of second grinding wheels that are sequentially arranged from the outer side to the inner side in the radial direction of the wheel base. The second grinding wheel that is arranged on the innermost side in the radial direction is next to the first grinding wheel that is arranged on the outermost side in the radial direction of the wheel base. Also provided is a grinding wheel, characterized in that it is also arranged radially inside the wheel base .

また、本発明によれば、上記研削ホイールを装着した研削手段と、被加工物を保持するチャックテーブルと、を備える研削装置を用いて被加工物を研削する被加工物の研削方法であって、該ホイール基台の径方向において最も外側に配置されている研削砥石の軌跡が、該被加工物の中心を通るように該研削ホイールと被加工物との位置を合わせて研削を実施することを特徴とする被加工物の研削方法が提供される。 Further, according to the present invention, there is provided a grinding method for a work piece, which grinds the work piece by using a grinding device equipped with the grinding means equipped with the grinding wheel and a chuck table for holding the work piece. And performing the grinding by aligning the position of the grinding wheel and the workpiece so that the locus of the grinding wheel arranged on the outermost side in the radial direction of the wheel base passes through the center of the workpiece. A method for grinding a work piece is provided.

本発明に係る被加工物の研削方法において、被加工物は、サファイア基板又はＳｉＣ基板でも良い。 In the method of grinding a workpiece according to the present invention, the workpiece may be a sapphire substrate or a SiC substrate.

本発明に係る研削ホイールでは、ホイール基台の周方向において隣接する２個の研削砥石がホイール基台の径方向において異なる位置に配置されているので、周方向に隣接する２個の研削砥石が径方向の同じ位置（すなわち、同一の円周上）に配置されている従来の研削ホイールと比較して、被加工物と研削砥石とが接触する領域を分散できる。よって、中央領域の研削量を低減して、被加工物をより平坦に研削できる。 In the grinding wheel according to the present invention, since the two grinding wheels adjacent to each other in the circumferential direction of the wheel base are arranged at different positions in the radial direction of the wheel base, the two grinding wheels adjacent to each other in the circumferential direction are Compared with the conventional grinding wheel arranged at the same position in the radial direction (that is, on the same circumference), it is possible to disperse the region where the workpiece and the grinding wheel are in contact with each other. Therefore, the amount of grinding in the central region can be reduced and the work piece can be ground more flatly.

研削装置の構成例を模式的に示す斜視図である。It is a perspective view which shows the structural example of a grinding device typically. 研削ホイールの構造を模式的に示す斜視図である。It is a perspective view which shows the structure of a grinding wheel typically. 研削ホイールの構造を模式的に示す平面図である。It is a top view which shows the structure of a grinding wheel typically. 被加工物が研削される様子を模式的に示す側面図である。It is a side view which shows typically a mode that a to-be-processed object is grinded. 研削時の被加工物と砥石との位置関係の例を模式的に示す図である。It is a figure which shows typically the example of the positional relationship of the to-be-processed object and a grindstone at the time of grinding. 実験の結果を示すグラフである。It is a graph which shows the result of an experiment. 変形例に係る研削ホイールの構造を模式的に示す平面図である。It is a top view which shows typically the structure of the grinding wheel which concerns on a modification.

添付図面を参照して、本発明の実施形態について説明する。はじめに、本実施形態に係る研削ホイールが使用される研削装置の構成例について説明する。図１は、研削装置の構成例を模式的に示す斜視図である。図１に示すように、本実施形態の研削装置２は、各構造が搭載される直方体状の基台４を備えている。基台４の後端には、支持壁６が立てられている。 Embodiments of the present invention will be described with reference to the accompanying drawings. First, a configuration example of a grinding device in which the grinding wheel according to the present embodiment is used will be described. FIG. 1 is a perspective view schematically showing a configuration example of a grinding device. As shown in FIG. 1, the grinding device 2 of the present embodiment includes a rectangular parallelepiped base 4 on which each structure is mounted. A support wall 6 is erected at the rear end of the base 4.

基台４の上面には、Ｘ軸方向（前後方向）に長い矩形の開口４ａが形成されている。この開口４ａ内には、Ｘ軸移動テーブル８、Ｘ軸移動テーブル８をＸ軸方向に移動させるＸ軸移動機構（不図示）、及びＸ軸移動機構を覆う防塵防滴カバー１０が配置されている。また、開口４ａの前方には、研削条件等を入力するための操作パネル１２が設置されている。 A rectangular opening 4 a that is long in the X-axis direction (front-back direction) is formed on the upper surface of the base 4. An X-axis moving table 8, an X-axis moving mechanism (not shown) for moving the X-axis moving table 8 in the X-axis direction, and a dustproof/splash-proof cover 10 for covering the X-axis moving mechanism are arranged in the opening 4a. There is. An operation panel 12 for inputting grinding conditions and the like is installed in front of the opening 4a.

Ｘ軸移動機構は、Ｘ軸方向に平行な一対のＸ軸ガイドレール（不図示）を備えており、Ｘ軸ガイドレールには、Ｘ軸移動テーブル８がスライド可能に取り付けられている。Ｘ軸移動テーブル８の下面側には、ナット部（不図示）が設けられており、このナット部には、Ｘ軸ガイドレールと平行なＸ軸ボールネジ（不図示）が螺合されている。 The X-axis moving mechanism includes a pair of X-axis guide rails (not shown) parallel to the X-axis direction, and the X-axis moving table 8 is slidably attached to the X-axis guide rails. A nut portion (not shown) is provided on the lower surface side of the X-axis moving table 8, and an X-axis ball screw (not shown) parallel to the X-axis guide rail is screwed into the nut portion.

Ｘ軸ボールネジの一端部には、Ｘ軸パルスモータ（不図示）が連結されている。Ｘ軸パルスモータでＸ軸ボールネジを回転させることにより、Ｘ軸移動テーブル８はＸ軸ガイドレールに沿ってＸ軸方向に移動する。 An X-axis pulse motor (not shown) is connected to one end of the X-axis ball screw. By rotating the X-axis ball screw with the X-axis pulse motor, the X-axis moving table 8 moves in the X-axis direction along the X-axis guide rail.

Ｘ軸移動テーブル８上には、板状の被加工物１１（図４、図５参照）を吸引、保持するチャックテーブル１４が設けられている。チャックテーブル１４は、モータ等の回転駆動源（不図示）に連結されており、Ｚ軸方向（鉛直方向）に概ね平行な回転軸の周りに回転する。また、チャックテーブル１４は、上述したＸ軸移動機構によって、Ｘ軸移動テーブル８と共にＸ軸方向に移動する。 A chuck table 14 for sucking and holding a plate-shaped workpiece 11 (see FIGS. 4 and 5) is provided on the X-axis moving table 8. The chuck table 14 is connected to a rotary drive source (not shown) such as a motor, and rotates about a rotation axis substantially parallel to the Z-axis direction (vertical direction). Further, the chuck table 14 moves in the X-axis direction together with the X-axis moving table 8 by the above-mentioned X-axis moving mechanism.

チャックテーブル１４の上面は、被加工物１１を吸引、保持する保持面１４ａとなっている。この保持面１４ａは、チャックテーブル１４の内部に形成された流路（不図示）等を通じて吸引源（不図示）に接続されている。チャックテーブル１４に載せられた被加工物１１は、保持面１４ａに作用する吸引源の負圧でチャックテーブル１４に吸引、保持される。 The upper surface of the chuck table 14 serves as a holding surface 14a that sucks and holds the workpiece 11. The holding surface 14 a is connected to a suction source (not shown) through a flow path (not shown) formed inside the chuck table 14. The workpiece 11 placed on the chuck table 14 is sucked and held by the chuck table 14 by the negative pressure of the suction source acting on the holding surface 14a.

支持壁６の前面には、Ｚ軸移動機構１６が設けられている。Ｚ軸移動機構１６は、Ｚ軸方向に平行な一対のＺ軸ガイドレール１８を備えており、このＺ軸ガイドレール１８には、Ｚ軸移動プレート２０がスライド可能に取り付けられている。 A Z-axis moving mechanism 16 is provided on the front surface of the support wall 6. The Z-axis moving mechanism 16 includes a pair of Z-axis guide rails 18 parallel to the Z-axis direction, and a Z-axis moving plate 20 is slidably attached to the Z-axis guide rails 18.

Ｚ軸移動プレート２０の後面側（裏面側）には、ナット部（不図示）が設けられており、このナット部には、Ｚ軸ガイドレール１８に平行なＺ軸ボールネジ２２が螺合されている。Ｚ軸ボールネジ２２の一端部には、Ｚ軸パルスモータ２４が連結されている。Ｚ軸パルスモータ２４でＺ軸ボールネジ２２を回転させることにより、Ｚ軸移動プレート２０はＺ軸ガイドレール１８に沿ってＺ軸方向に移動する。 A nut portion (not shown) is provided on the rear surface side (back surface side) of the Z-axis moving plate 20, and a Z-axis ball screw 22 parallel to the Z-axis guide rail 18 is screwed into the nut portion. There is. A Z-axis pulse motor 24 is connected to one end of the Z-axis ball screw 22. By rotating the Z-axis ball screw 22 with the Z-axis pulse motor 24, the Z-axis moving plate 20 moves in the Z-axis direction along the Z-axis guide rail 18.

Ｚ軸移動プレート２０の前面（表面）には、前方に突出した支持構造２６が設けられており、この支持構造２６には、被加工物１１を研削する研削ユニット（研削手段）２８が支持されている。研削ユニット２８は、支持構造２６に固定されたスピンドルハウジング３０を含む。スピンドルハウジング３０には、回転軸となるスピンドル３２が回転可能に収容されている。 A support structure 26 projecting forward is provided on the front surface (front surface) of the Z-axis moving plate 20, and a grinding unit (grinding means) 28 for grinding the workpiece 11 is supported by the support structure 26. ing. The grinding unit 28 includes a spindle housing 30 fixed to the support structure 26. A spindle 32, which serves as a rotation shaft, is rotatably accommodated in the spindle housing 30.

スピンドル３２の下端部（先端部）は、スピンドルハウジング３０から露出している。このスピンドル３２の下端部には、円盤状のホイールマウント３４が固定されている。ホイールマウント３４の下面には、ホイールマウント３４と概ね同径に構成された円盤状の研削ホイール１がボルト等で装着されている。 The lower end (tip) of the spindle 32 is exposed from the spindle housing 30. A disk-shaped wheel mount 34 is fixed to the lower end of the spindle 32. On the lower surface of the wheel mount 34, a disk-shaped grinding wheel 1 having a diameter substantially the same as that of the wheel mount 34 is mounted with bolts or the like.

スピンドル３２の上端側（基端側）には、モータ等の回転駆動源（不図示）が連結されている。研削ホイール１は、この回転駆動源から伝達される回転力によって、Ｚ軸方向に概ね平行な回転軸の周りに回転する。チャックテーブル１４と研削ホイール１とを相対的に回転させつつ、研削ホイール１を下降させ、純水等の研削液を供給しながら被加工物１１に接触させることで、被加工物１１を研削できる。 A rotary drive source (not shown) such as a motor is connected to the upper end side (base end side) of the spindle 32. The grinding wheel 1 is rotated about a rotation axis substantially parallel to the Z-axis direction by the rotation force transmitted from this rotary drive source. The workpiece 11 can be ground by bringing the workpiece 1 into contact with the workpiece 11 while supplying the grinding liquid such as pure water while rotating the chuck table 14 and the grinding wheel 1 relative to each other. ..

図２は、本実施形態に係る研削ホイール１の構造を模式的に示す斜視図であり、図３は、研削ホイール１の構造を模式的に示す平面図（底面図）である。図２及び図３に示すように、本実施形態に係る研削ホイール１は、ステンレス、アルミニウム等でなる円盤状（円環状）のホイール基台３を備えている。 FIG. 2 is a perspective view schematically showing the structure of the grinding wheel 1 according to this embodiment, and FIG. 3 is a plan view (bottom view) schematically showing the structure of the grinding wheel 1. As shown in FIGS. 2 and 3, the grinding wheel 1 according to the present embodiment includes a disc-shaped (annular) wheel base 3 made of stainless steel, aluminum, or the like.

ホイール基台３は、概ね平坦かつ互いに平行な第１面３ａと第２面３ｂとを有し、その中央部には、ホイール基台３を第１面３ａから第２面３ｂまで貫通する円形の開口３ｃが形成されている。このホイール基台３の第２面３ｂを研削装置２のホイールマウント３４に接触させることで、研削装置２に研削ホイール１を装着できる。一方、被加工物１１を研削する際には、ホイール基台３の第１面３ａが被加工物１１に対面する。 The wheel base 3 has a first surface 3a and a second surface 3b which are substantially flat and parallel to each other, and a circular shape which penetrates the wheel base 3 from the first surface 3a to the second surface 3b at the center thereof. The opening 3c is formed. The grinding wheel 1 can be mounted on the grinding device 2 by bringing the second surface 3 b of the wheel base 3 into contact with the wheel mount 34 of the grinding device 2. On the other hand, when grinding the workpiece 11, the first surface 3 a of the wheel base 3 faces the workpiece 11.

ホイール基台３の第１面３ａには、複数の砥石（砥石部材）５が環状に配列されている。各砥石５は、例えば、金属、セラミックス、樹脂等の結合材（ボンド材）に、ダイヤモンド、ＣＢＮ（Cubic Boron Nitride）等の砥粒を混合して直方体状に形成されている。なお、結合材や砥粒に制限はなく、被加工物１１の種類等に応じて適切に選択、変更できる。また、ホイール基台３に配列される砥石５の数量も、ホイール基台３や被加工物１１の大きさ等に合わせて適切に設定できる。 A plurality of grindstones (grinding stone members) 5 are annularly arranged on the first surface 3 a of the wheel base 3. Each whetstone 5 is formed in a rectangular parallelepiped shape by mixing abrasive grains such as diamond and CBN (Cubic Boron Nitride) into a binder (bond material) such as metal, ceramics and resin. The binder and the abrasive grains are not limited, and can be appropriately selected and changed according to the type of the workpiece 11 and the like. Further, the number of the grindstones 5 arranged on the wheel base 3 can be appropriately set according to the sizes of the wheel base 3 and the workpiece 11.

図３に示すように、ホイール基台３の周方向（θ方向）において隣接する任意の２個の砥石５は、ホイール基台３の径方向（ｒ方向）において異なる位置に配置されている。言い換えれば、隣接する任意の２個の砥石５は、ホイール基台３の回転軸３ｄ上の点を中心として、半径が異なる同心円上に配置されている。 As shown in FIG. 3, any two grindstones 5 adjacent to each other in the circumferential direction (θ direction) of the wheel base 3 are arranged at different positions in the radial direction (r direction) of the wheel base 3. In other words, any two adjacent grindstones 5 are arranged on concentric circles having different radii about the point on the rotation axis 3d of the wheel base 3.

砥石５をこのように配置することで、研削の際に被加工物１１と砥石５とが接触する領域を分散できる。つまり、砥石５から被加工物１１への応力は、被加工物１１の特定の領域（例えば、中央領域）に集中し難くなる。これにより、特定の領域（中央領域）の研削量を低減して、被加工物１１をより平坦に研削できる。 By disposing the grindstone 5 in this way, it is possible to disperse the regions where the workpiece 11 and the grindstone 5 contact each other during grinding. That is, the stress from the grindstone 5 to the workpiece 11 is less likely to be concentrated in a specific area (for example, the central area) of the workpiece 11. As a result, the grinding amount in the specific region (central region) can be reduced and the workpiece 11 can be ground more flatly.

また、この複数の砥石５は、研削の際に形成される任意の砥石５の軌跡の一部と、別のいずれかの砥石５の軌跡の一部と、が重なるように配列されている。すなわち、全ての砥石５の軌跡が一体になるので、ある砥石５の軌跡と、残りの砥石５の軌跡と、の間に隙間ができることはない。 Further, the plurality of grindstones 5 are arranged such that a part of a locus of an arbitrary grindstone 5 formed at the time of grinding and a part of a locus of another grindstone 5 overlap each other. That is, since the loci of all the grindstones 5 are integrated, there is no gap between the loci of one grindstone 5 and the loci of the remaining grindstones 5.

具体的には、図３に示すように、径方向（ｒ方向）において最も外側に位置する砥石５ａの軌跡の内側の一部が、径方向において内側に位置する砥石５ｂの軌跡の外側の一部と重なっている。また、砥石５ｂの軌跡の内側の一部が、より内側に位置する砥石５ｃの軌跡の外側の一部と重なっている。同様に、砥石５ｃの軌跡の内側の一部が、内側に位置する砥石５ｄの軌跡の外側の一部と重なっている。 Specifically, as shown in FIG. 3, a part of the inner side of the locus of the grindstone 5a located on the outermost side in the radial direction (r direction) is located outside the locus of the grindstone 5b located on the inner side in the radial direction. It overlaps with the department. Further, a part of the inner side of the locus of the grindstone 5b overlaps a part of the outer side of the locus of the grindstone 5c located inside. Similarly, a part of the inside of the locus of the grindstone 5c overlaps with a part of the outside of the locus of the grindstone 5d located inside.

さらに、砥石５ｄの軌跡の内側の一部が、内側に位置する砥石５ｅの軌跡の外側の一部と重なっている。また、砥石５ｅの軌跡の内側の一部が、径方向８ｂで最も内側に位置する砥石５ｆの軌跡の外側の一部と重なっている。そして、その結果、全ての砥石５ａ，５ｂ，５ｃ，５ｄ，５ｅ，５ｆの軌跡が一体になっている。 Furthermore, a part of the inner side of the locus of the grindstone 5d overlaps a part of the outer side of the locus of the grindstone 5e located inside. Further, a part of the inner side of the locus of the grindstone 5e overlaps a part of the outer side of the locus of the grindstone 5f positioned on the innermost side in the radial direction 8b. As a result, the loci of all the grindstones 5a, 5b, 5c, 5d, 5e, 5f are integrated.

つまり、ある砥石５の軌跡の内側の一部と、この砥石５よりも径方向において内側に位置する砥石５の軌跡の外側の一部とが重なっている。または、ある砥石５の軌跡の外側の一部と、この砥石５よりも径方向において外側に位置する砥石５の軌跡の内側の一部とが重なっている。複数の砥石５をこのように配列することで、ある砥石５の軌跡と別の砥石５の軌跡との隙間で被加工物１１の研削量が減少することはない。これにより、被加工物１１の全面をより平坦に研削できる。 That is, a part of the inner side of the locus of a certain grindstone 5 and a part of the outer side of the locus of the grindstone 5 positioned inside the grindstone 5 in the radial direction overlap. Alternatively, a part of the outer side of the locus of a certain grindstone 5 and a part of the inner side of the locus of the grindstone 5 positioned radially outside the grindstone 5 overlap. By arranging the plurality of grindstones 5 in this way, the amount of grinding of the workpiece 11 does not decrease in the gap between the locus of one grindstone 5 and the locus of another grindstone 5. As a result, the entire surface of the work piece 11 can be ground more evenly.

次に、上述の研削ホイール１を用いた被加工物の研削方法について説明する。図４は、被加工物１１が研削される様子を模式的に示す側面図であり、図５は、研削時の被加工物１１と砥石５との位置関係の例を模式的に示す図である。なお、本実施形態では、被加工物１１として、サファイア基板又はＳｉＣ基板を用いるが、他の半導体ウェーハや樹脂基板、セラミックス基板等を被加工物１１として用いることもできる。 Next, a method of grinding a workpiece using the grinding wheel 1 described above will be described. FIG. 4 is a side view schematically showing how the workpiece 11 is ground, and FIG. 5 is a diagram schematically showing an example of the positional relationship between the workpiece 11 and the grindstone 5 during grinding. is there. In this embodiment, a sapphire substrate or a SiC substrate is used as the workpiece 11, but other semiconductor wafers, resin substrates, ceramics substrates, or the like can be used as the workpiece 11.

被加工物１１の第１面１１ａ側を研削する場合には、図４に示すように、例えば、被加工物１１の第２面１１ｂをチャックテーブル１４の保持面１４ａに接触させて、吸引源の負圧を作用させる。これにより、被加工物１１は、第１面１１ａ側が上方に露出した状態でチャックテーブル１４に吸引、保持される。 When the first surface 11a side of the work piece 11 is ground, for example, the second surface 11b of the work piece 11 is brought into contact with the holding surface 14a of the chuck table 14 as shown in FIG. The negative pressure of is applied. As a result, the workpiece 11 is sucked and held by the chuck table 14 with the first surface 11a side exposed upward.

次に、チャックテーブル１４を研削ホイール１の下方に移動させる。そして、図４に示すように、チャックテーブル１４と研削ホイール１とをそれぞれ回転させて、純水等の研削液を供給しながら研削ユニット２８を下降させる。研削ユニット２８の下降量（送り速度）は、被加工物１１の第１面１１ａに砥石５の下面が押し当てられる程度に調整される。これにより、被加工物１１の第１面１１ａ側を研削できる。 Next, the chuck table 14 is moved below the grinding wheel 1. Then, as shown in FIG. 4, the chuck table 14 and the grinding wheel 1 are respectively rotated to lower the grinding unit 28 while supplying a grinding liquid such as pure water. The descending amount (feed rate) of the grinding unit 28 is adjusted to such an extent that the lower surface of the grindstone 5 is pressed against the first surface 11a of the workpiece 11. As a result, the first surface 11a side of the workpiece 11 can be ground.

この研削は、図５に示すように、ホイール基台３の径方向（ｒ方向）において最も外側に位置する砥石５ａの軌跡５ｇが、被加工物１１の中心１１ｃを通るように、研削ホイール１と被加工物１１（チャックテーブル１４）との位置を調整した状態で遂行される。これにより、被加工物１１の第１面１１ａを適切に研削できる。 As shown in FIG. 5, this grinding is performed so that the locus 5g of the grindstone 5a located on the outermost side in the radial direction (r direction) of the wheel base 3 passes through the center 11c of the workpiece 11 so as to pass through the grinding wheel 1. And the workpiece 11 (chuck table 14) are adjusted in position. As a result, the first surface 11a of the workpiece 11 can be appropriately ground.

次に、本実施形態に係る研削ホイール１の効果を確認するために行った実験について説明する。この実験では、上述した研削ホイール１（実施例）と、周方向に隣接する２個の砥石が径方向の同じ位置（すなわち、同一の円周上）に配置されている従来の研削ホイール（比較例）と、を用いて同じ条件でサファイア基板を研削し、研削後の被研削面の高さ（高さプロファイル）を測定した。 Next, an experiment conducted to confirm the effect of the grinding wheel 1 according to this embodiment will be described. In this experiment, the above-described grinding wheel 1 (Example) and a conventional grinding wheel in which two grinding wheels adjacent to each other in the circumferential direction are arranged at the same radial position (that is, on the same circumference) (comparison) Example) and were used to grind a sapphire substrate under the same conditions, and the height (height profile) of the ground surface after grinding was measured.

具体的には、直径が４インチで厚さが６５０μｍのサファイア基板を、１００μｍの厚さになるまで研削した。スピンドル３２（研削ホイール）の回転数は１０００ｒｐｍ、チャックテーブル１４の回転数は３００ｒｐｍ、研削ユニット２８（研削ホイール）の下降量（送り速度）は０．２μｍ／ｓにそれぞれ設定した。 Specifically, a sapphire substrate having a diameter of 4 inches and a thickness of 650 μm was ground to a thickness of 100 μm. The rotation speed of the spindle 32 (grinding wheel) was set to 1000 rpm, the rotation speed of the chuck table 14 was set to 300 rpm, and the descending amount (feed speed) of the grinding unit 28 (grinding wheel) was set to 0.2 μm/s.

図６は、実験の結果を示すグラフである。図６に示すように、従来の研削ホイール（比較例）では、サファイア基板の中央領域（例えば、測定位置が４０ｍｍ〜６０ｍｍの領域）が凹状に研削されているが、本実施形態の研削ホイール１（実施例）では、概ね平坦に研削されている。 FIG. 6 is a graph showing the results of the experiment. As shown in FIG. 6, in the conventional grinding wheel (comparative example), the central region of the sapphire substrate (for example, the region where the measurement position is 40 mm to 60 mm) is ground in a concave shape. In (Example), it is ground to be substantially flat.

以上のように、本実施形態に係る研削ホイール１では、ホイール基台３の周方向（θ方向）において隣接する２個の砥石（研削砥石）５がホイール基台３の径方向（ｒ方向）において異なる位置に配置されているので、周方向に隣接する２個の砥石が径方向の同じ位置（すなわち、同一の円周上）に配置されている従来の研削ホイールと比較して、被加工物１１と砥石５とが接触する領域を分散できる。よって、中央領域の研削量を低減して、被加工物１１をより平坦に研削できる。 As described above, in the grinding wheel 1 according to the present embodiment, the two grindstones (grinding grindstones) 5 adjacent to each other in the circumferential direction (θ direction) of the wheel base 3 are the radial direction (r direction) of the wheel base 3. Since the two grinding wheels that are adjacent to each other in the circumferential direction are arranged at the same position in the radial direction (that is, on the same circumference), the workpiece to be machined is different from that of the conventional grinding wheel. The area where the object 11 and the grindstone 5 contact can be dispersed. Therefore, the amount of grinding in the central region can be reduced and the workpiece 11 can be ground more flatly.

なお、本発明は、上記実施形態の記載に制限されず種々変更して実施可能である。例えば、砥石５の配列等は、発明の効果が得られる態様で任意に変更できる。図７は、変形例に係る研削ホイールの構造を模式的に示す平面図（底面図）である。 It should be noted that the present invention is not limited to the description of the above embodiment and can be implemented with various modifications. For example, the arrangement of the grindstones 5 and the like can be arbitrarily changed in a mode in which the effect of the invention can be obtained. FIG. 7: is a top view (bottom view) which shows typically the structure of the grinding wheel which concerns on a modification.

変形例に係る研削ホイール２１の基本的な構造は、上記実施形態に係る研削ホイール１の構造と同じである。すなわち、研削ホイール２１は、図７に示すように、円盤状（円環状）のホイール基台３を備えている。ホイール基台３の第１面３ａには、複数の砥石（砥石部材）５が環状に配列されている。 The basic structure of the grinding wheel 21 according to the modification is the same as the structure of the grinding wheel 1 according to the above embodiment. That is, the grinding wheel 21 includes a disc-shaped (annular) wheel base 3 as shown in FIG. 7. A plurality of grindstones (grinding stone members) 5 are annularly arranged on the first surface 3 a of the wheel base 3.

この変形例に係る研削ホイール２１でも、ホイール基台３の周方向（θ方向）において隣接する任意の２個の砥石５は、ホイール基台３の径方向（ｒ方向）において異なる位置に配置されている。また、複数の砥石５は、研削の際に形成される任意の砥石５の軌跡の一部と、別のいずれかの砥石５の軌跡の一部と、が重なるように配列されている。 Also in the grinding wheel 21 according to this modification, any two grindstones 5 adjacent to each other in the circumferential direction (θ direction) of the wheel base 3 are arranged at different positions in the radial direction (r direction) of the wheel base 3. ing. Further, the plurality of grindstones 5 are arranged so that a part of the locus of an arbitrary grindstone 5 formed at the time of grinding and a part of the locus of another grindstone 5 are overlapped with each other.

よって、この変形例に係る研削ホイール２１でも、上記実施形態の研削ホイール１と同様の効果を得ることができる。その他、上記実施形態に係る構造、方法等は、本発明の目的の範囲を逸脱しない限りにおいて適宜変更して実施できる。 Therefore, the grinding wheel 21 according to this modification can also achieve the same effects as the grinding wheel 1 of the above-described embodiment. In addition, the structures, methods, and the like according to the above-described embodiments can be appropriately modified and implemented without departing from the scope of the object of the present invention.

１，２１ 研削ホイール
３ ホイール基台
３ａ 第１面
３ｂ 第２面
３ｃ 開口
３ｄ 回転軸
５，５ａ，５ｂ，５ｃ，５ｄ，５ｅ，５ｆ 砥石（研削砥石）
５ｇ 軌跡
２ 研削装置
４ 基台
４ａ 開口
６ 支持壁
８ Ｘ軸移動テーブル
１０ 防塵防滴カバー
１２ 操作パネル
１４ チャックテーブル
１４ａ 保持面
１６ Ｚ軸移動機構
１８ Ｚ軸ガイドレール
２０ Ｚ軸移動プレート
２２ Ｚ軸ボールネジ
２４ Ｚ軸パルスモータ
２６ 支持構造
２８ 研削ユニット（研削手段）
３０ スピンドルハウジング
３２ スピンドル
３４ ホイールマウント
１１ 被加工物
１１ａ 第１面
１１ｂ 第２面
１１ｃ 中心 1, 21 Grinding wheel 3 Wheel base 3a First surface 3b Second surface 3c Opening 3d Rotating shaft 5,5a, 5b, 5c, 5d, 5e, 5f Grinding wheel (grinding wheel)
5g locus 2 grinding device 4 base 4a opening 6 support wall 8 X-axis moving table 10 dust-proof and drip cover 12 operation panel 14 chuck table 14a holding surface 16 Z-axis moving mechanism 18 Z-axis guide rail 20 Z-axis moving plate 22 Z-axis Ball screw 24 Z-axis pulse motor 26 Support structure 28 Grinding unit (grinding means)
30 Spindle Housing 32 Spindle 34 Wheel Mount 11 Workpiece 11a First Surface 11b Second Surface 11c Center

Claims (3)

サファイア基板、ＳｉＣ基板、半導体ウェーハ、樹脂基板又はセラミックス基板である板状の被加工物を研削するための研削ホイールであって、
研削の際に被加工物に対面する第１面を有する円盤状のホイール基台と、
該ホイール基台の該第１面に環状に配列される複数の研削砥石と、を備え、
該ホイール基台の周方向において隣接する２個の該研削砥石は、該ホイール基台の径方向において異なる位置に配置され、
該複数の研削砥石は、研削の際に形成される任意の該研削砥石の軌跡の一部と、別のいずれかの該研削砥石の軌跡の一部と、が重なり、且つ、全ての該研削砥石の軌跡が一体となるように配列され、
該複数の研削砥石は、該ホイール基台の径方向の外側から内側に向かって順に配列された複数の第１の研削砥石と、該ホイール基台の径方向の外側から内側に向かって順に配列された複数の第２の研削砥石と、を含み、
該ホイール基台の径方向の最も内側に配置されている該第２の研削砥石は、該ホイール基台の径方向の最も外側に配置されている該第１の研削砥石の隣に、該第１の研削砥石よりも該ホイール基台の径方向の内側に配置されていることを特徴とする研削ホイール。 A grinding wheel for grinding a plate-shaped workpiece, which is a sapphire substrate, a SiC substrate, a semiconductor wafer, a resin substrate, or a ceramics substrate ,
A disk-shaped wheel base having a first surface facing the workpiece during grinding,
A plurality of grinding wheels arranged annularly on the first surface of the wheel base,
The two grinding wheels adjacent to each other in the circumferential direction of the wheel base are arranged at different positions in the radial direction of the wheel base,
In the plurality of grinding wheels, a part of a locus of the grinding wheel formed at the time of grinding and a part of a locus of another grinding wheel overlap each other, and all the grinding wheels the trajectory of the grinding wheel is arranged so integral door ing,
The plurality of grinding wheels are arranged in order from the outer side to the inner side in the radial direction of the wheel base, and a plurality of first grinding wheels are arranged in order from the outer side to the inner side in the radial direction of the wheel base. A plurality of second grinding wheels,
The second grinding wheel that is arranged on the innermost side in the radial direction of the wheel base is adjacent to the first grinding wheel that is arranged on the outermost side in the radial direction of the wheel base. A grinding wheel, which is arranged radially inward of the wheel base with respect to No. 1 grinding wheel. 請求項１に記載の研削ホイールを装着した研削手段と、被加工物を保持するチャックテーブルと、を備える研削装置を用いて被加工物を研削する被加工物の研削方法であって、
該ホイール基台の径方向において最も外側に配置されている研削砥石の軌跡が、該被加工物の中心を通るように該研削ホイールと被加工物との位置を合わせて研削を実施することを特徴とする被加工物の研削方法。 A method of grinding a workpiece using a grinding device equipped with the grinding wheel according to claim 1 and a chuck table for holding the workpiece.
Performing grinding by aligning the positions of the grinding wheel and the workpiece so that the locus of the grinding wheel arranged on the outermost side in the radial direction of the wheel base passes through the center of the workpiece. A method of grinding a featured work piece. 被加工物は、サファイア基板又はＳｉＣ基板であることを特徴とする請求項２に記載の被加工物の研削方法。 The method for grinding a work piece according to claim 2, wherein the work piece is a sapphire substrate or a SiC substrate.
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