JP6699042B2 - Metal foil with resin for manufacturing printed circuit board, printed circuit board and method for manufacturing the same - Google Patents
Metal foil with resin for manufacturing printed circuit board, printed circuit board and method for manufacturing the same Download PDFInfo
- Publication number
- JP6699042B2 JP6699042B2 JP2015134369A JP2015134369A JP6699042B2 JP 6699042 B2 JP6699042 B2 JP 6699042B2 JP 2015134369 A JP2015134369 A JP 2015134369A JP 2015134369 A JP2015134369 A JP 2015134369A JP 6699042 B2 JP6699042 B2 JP 6699042B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- metal foil
- weight
- printed circuit
- circuit board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229920005989 resin Polymers 0.000 title claims description 89
- 239000011347 resin Substances 0.000 title claims description 89
- 229910052751 metal Inorganic materials 0.000 title claims description 51
- 239000002184 metal Substances 0.000 title claims description 51
- 239000011888 foil Substances 0.000 title claims description 49
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 238000000034 method Methods 0.000 title claims description 9
- UFWIBTONFRDIAS-UHFFFAOYSA-N naphthalene-acid Natural products C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims description 53
- 239000003822 epoxy resin Substances 0.000 claims description 31
- 229920000647 polyepoxide Polymers 0.000 claims description 31
- 239000004962 Polyamide-imide Substances 0.000 claims description 29
- 229920002312 polyamide-imide Polymers 0.000 claims description 29
- 239000002904 solvent Substances 0.000 claims description 25
- 238000009835 boiling Methods 0.000 claims description 24
- 239000003795 chemical substances by application Substances 0.000 claims description 23
- 239000004593 Epoxy Substances 0.000 claims description 17
- 229920001721 polyimide Polymers 0.000 claims description 12
- 239000009719 polyimide resin Substances 0.000 claims description 12
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims description 10
- 229920003986 novolac Polymers 0.000 claims description 9
- 239000005011 phenolic resin Substances 0.000 claims description 8
- 239000004305 biphenyl Substances 0.000 claims description 5
- 235000010290 biphenyl Nutrition 0.000 claims description 5
- 230000003746 surface roughness Effects 0.000 claims description 3
- YJTKZCDBKVTVBY-UHFFFAOYSA-N 1,3-Diphenylbenzene Chemical group C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1 YJTKZCDBKVTVBY-UHFFFAOYSA-N 0.000 claims description 2
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims 1
- 125000001624 naphthyl group Chemical group 0.000 claims 1
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 30
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 20
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 19
- 239000002966 varnish Substances 0.000 description 19
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 13
- 239000010949 copper Substances 0.000 description 12
- -1 4,4′-diaminodiphenyl ketone Chemical class 0.000 description 11
- 229910000679 solder Inorganic materials 0.000 description 11
- 229910052802 copper Inorganic materials 0.000 description 10
- 239000011889 copper foil Substances 0.000 description 10
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 10
- 239000000126 substance Substances 0.000 description 9
- 238000007747 plating Methods 0.000 description 7
- 239000001294 propane Substances 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
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- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- ODLMAHJVESYWTB-UHFFFAOYSA-N propylbenzene Chemical compound CCCC1=CC=CC=C1 ODLMAHJVESYWTB-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 4
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- WCXGOVYROJJXHA-UHFFFAOYSA-N 3-[4-[4-(3-aminophenoxy)phenyl]sulfonylphenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(=CC=2)S(=O)(=O)C=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)=C1 WCXGOVYROJJXHA-UHFFFAOYSA-N 0.000 description 3
- UTDAGHZGKXPRQI-UHFFFAOYSA-N 4-[4-[4-(4-aminophenoxy)phenyl]sulfonylphenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(S(=O)(=O)C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)C=C1 UTDAGHZGKXPRQI-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- OJSPYCPPVCMEBS-UHFFFAOYSA-N 2,8-dimethyl-5,5-dioxodibenzothiophene-3,7-diamine Chemical compound C12=CC(C)=C(N)C=C2S(=O)(=O)C2=C1C=C(C)C(N)=C2 OJSPYCPPVCMEBS-UHFFFAOYSA-N 0.000 description 2
- QNLCDRXVEPWSBQ-UHFFFAOYSA-N 4-(4,5-dicarboxy-5-phenylcyclohexa-1,3-dien-1-yl)phthalic acid Chemical compound OC(=O)C1=CC=C(C=2C=C(C(C(O)=O)=CC=2)C(O)=O)CC1(C(O)=O)C1=CC=CC=C1 QNLCDRXVEPWSBQ-UHFFFAOYSA-N 0.000 description 2
- HPUJEBAZZTZOFL-UHFFFAOYSA-N 4-[3-(4-aminophenoxy)-2,2-dimethylpropoxy]aniline Chemical compound C=1C=C(N)C=CC=1OCC(C)(C)COC1=CC=C(N)C=C1 HPUJEBAZZTZOFL-UHFFFAOYSA-N 0.000 description 2
- HHLMWQDRYZAENA-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(C(C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)(C(F)(F)F)C(F)(F)F)C=C1 HHLMWQDRYZAENA-UHFFFAOYSA-N 0.000 description 2
- KMKWGXGSGPYISJ-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=CC(N)=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=C(N)C=C1 KMKWGXGSGPYISJ-UHFFFAOYSA-N 0.000 description 2
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- 238000005530 etching Methods 0.000 description 2
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 2
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- WYURNTSHIVDZCO-UHFFFAOYSA-N tetrahydrofuran Substances C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 1
- UHIDYCYNRPVZCK-UHFFFAOYSA-N 2-amino-4-[2-(3-amino-4-hydroxyphenyl)propan-2-yl]phenol Chemical compound C=1C=C(O)C(N)=CC=1C(C)(C)C1=CC=C(O)C(N)=C1 UHIDYCYNRPVZCK-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- UPMLOUAZCHDJJD-UHFFFAOYSA-N 4,4'-Diphenylmethane Diisocyanate Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=C(N=C=O)C=C1 UPMLOUAZCHDJJD-UHFFFAOYSA-N 0.000 description 1
- YARZEPAVWOMMHZ-UHFFFAOYSA-N 4-(3,4-dicarboxy-4-phenylcyclohexa-1,5-dien-1-yl)phthalic acid Chemical compound OC(=O)C1C=C(C=2C=C(C(C(O)=O)=CC=2)C(O)=O)C=CC1(C(O)=O)C1=CC=CC=C1 YARZEPAVWOMMHZ-UHFFFAOYSA-N 0.000 description 1
- BZIVKXRNXXPVJD-UHFFFAOYSA-N 4-[3-(4-aminophenoxy)phenoxy]aniline Chemical compound NC1=CC=C(OC2=CC(=CC=C2)OC2=CC=C(C=C2)N)C=C1.NC1=CC=C(OC2=CC(=CC=C2)OC2=CC=C(C=C2)N)C=C1 BZIVKXRNXXPVJD-UHFFFAOYSA-N 0.000 description 1
- ARIRCVKBIXMMHJ-UHFFFAOYSA-N 4-[4-(4-aminophenoxy)-2,3,5-trimethylphenoxy]aniline Chemical compound CC=1C(C)=C(OC=2C=CC(N)=CC=2)C(C)=CC=1OC1=CC=C(N)C=C1 ARIRCVKBIXMMHJ-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
- H05K3/384—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal by plating
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/07—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process being removed electrolytically
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
- H05K3/205—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern using a pattern electroplated or electroformed on a metallic carrier
Description
本発明は、印刷回路基板の製造用樹脂付き金属箔、印刷回路基板及びその製造方法に関する。 The present invention relates to a resin-coated metal foil for manufacturing a printed circuit board, a printed circuit board, and a method for manufacturing the same.
印刷回路基板とは絶縁材に銅のような導電性材料で回路パターンを形成したものであり、最近、電子部品の小型化、軽量化の傾向に伴ってより高密度の微細回路パターンが求められている。 A printed circuit board is a circuit pattern that is made of a conductive material such as copper as an insulating material. Recently, with the trend toward smaller and lighter electronic components, higher density fine circuit patterns are required. ing.
本発明の一実施形態は、回路パターンを形成する金属層との密着性に優れ、高い耐熱性を有する樹脂層を金属箔にコーティングして微細回路パターンの加工を容易にする印刷回路基板の製造のための樹脂付き金属箔に関する。 One embodiment of the present invention is a method of manufacturing a printed circuit board, which has excellent adhesion to a metal layer forming a circuit pattern and which coats a metal foil with a resin layer having high heat resistance to facilitate processing of a fine circuit pattern. For metal foil with resin for.
本発明の他の実施形態は、上記印刷回路基板の製造のための樹脂付き金属箔を用いて製造した印刷回路基板及びその製造方法に関する。 Another embodiment of the present invention relates to a printed circuit board manufactured using the resin-coated metal foil for manufacturing the printed circuit board, and a manufacturing method thereof.
上述した課題を解決すべく、本発明の一実施形態は、金属箔の表面に、ナフタレン系エポキシ樹脂と、エポキシ樹脂硬化剤と、沸点150℃以下の溶剤に溶けるポリイミド樹脂またはポリアミドイミド樹脂とを含む樹脂層が形成された印刷回路基板の製造のための樹脂付き金属箔を提供する。 In order to solve the above-mentioned problems, one embodiment of the present invention, on the surface of the metal foil, a naphthalene-based epoxy resin, an epoxy resin curing agent, and a polyimide resin or a polyamide-imide resin soluble in a solvent having a boiling point of 150° C. or less. Provided is a metal foil with resin for manufacturing a printed circuit board having a resin layer containing the resin layer.
また、本発明の他の実施形態は、上記樹脂付き金属箔を積層する段階と、上記樹脂付き金属箔から金属箔を除去する段階と、上記金属箔が除去された樹脂付き金属箔の樹脂層上に回路パターンを形成する段階と、を含む印刷回路基板の製造方法を提供する。 Further, another embodiment of the present invention is a step of laminating the resin-coated metal foil, a step of removing the metal foil from the resin-coated metal foil, and a resin layer of the resin-coated metal foil from which the metal foil has been removed. A method of manufacturing a printed circuit board, the method including forming a circuit pattern thereon.
本発明の一実施形態によると、回路パターンを形成する金属めっき層との接着性に優れた樹脂層を提供することにより、剥離強度と半田耐熱性を確保しながらも、微細回路パターンの加工を容易にすることができる。 According to one embodiment of the present invention, by providing a resin layer having excellent adhesiveness to a metal plating layer forming a circuit pattern, it is possible to process a fine circuit pattern while ensuring peel strength and solder heat resistance. Can be easy.
以下では、添付の図面を参照し、本発明の好ましい実施形態について説明する。しかし、本発明の実施形態は様々な他の形態に変形されることができ、本発明の範囲は以下で説明する実施形態に限定されない。また、本発明の実施形態は、当該技術分野で平均的な知識を有する者に本発明をより完全に説明するために提供されるものである。図面における要素の形状及び大きさなどはより明確な説明のために誇張されることがある。 Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. However, the embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Further, the embodiments of the present invention are provided to more fully explain the present invention to those having ordinary skill in the art. The shapes and sizes of elements in the drawings may be exaggerated for clearer description.
図1は、本発明の一実施形態による印刷回路基板の製造のための樹脂付き金属箔の断面図である。 FIG. 1 is a cross-sectional view of a resin-coated metal foil for manufacturing a printed circuit board according to an exemplary embodiment of the present invention.
図1を参照すると、本発明の一実施形態の樹脂付き金属箔100は、金属箔10の一面に樹脂層20が形成される。
Referring to FIG. 1, a resin-coated
上記樹脂層20は、ナフタレン系エポキシ樹脂、エポキシ樹脂硬化剤、及び沸点150℃以下の溶剤に溶けるポリイミド樹脂またはポリアミドイミド樹脂を含む。
The
上記ナフタレン系エポキシ樹脂は、常温、例えば、20±5℃で液状相のナフタレン系エポキシ樹脂であることが好ましく、ナフタレン系エポキシ樹脂の当量は、160以下であることが好ましい。 The naphthalene-based epoxy resin is preferably a liquid phase naphthalene-based epoxy resin at room temperature, for example, 20±5° C., and the equivalent weight of the naphthalene-based epoxy resin is preferably 160 or less.
上記ナフタレン系エポキシ樹脂の当量が160を超えると、樹脂層20が均一に形成されず、半田耐熱性が低下する。
When the equivalent weight of the naphthalene-based epoxy resin exceeds 160, the
上記エポキシ樹脂硬化剤は、フェノールアラルキル型樹脂、ナフトールアラルキル型樹脂、ノボラック型フェノール樹脂、窒素含有ノボラック樹脂、ジシクロペンタジエン型フェノール樹脂、ビフェニル型フェノール樹脂及びトリフェニル型フェノール樹脂からなる群より選択される何れか1つ以上を含む。 The epoxy resin curing agent is selected from the group consisting of phenol aralkyl type resin, naphthol aralkyl type resin, novolac type phenol resin, nitrogen-containing novolac resin, dicyclopentadiene type phenol resin, biphenyl type phenol resin and triphenyl type phenol resin. Any one or more.
上記エポキシ樹脂硬化剤の含量は、硬化させる樹脂に対する反応当量から導出されるもので、特に量は限定されず、上記ナフタレン系エポキシ樹脂を十分に硬化させる程度で含有することが好ましい。 The content of the epoxy resin curing agent is derived from the reaction equivalent to the resin to be cured, and the amount is not particularly limited, and it is preferable that the content of the naphthalene-based epoxy resin is sufficiently cured.
上記沸点150℃以下の溶剤に溶けるポリイミド樹脂またはポリアミドイミド樹脂は、芳香族を有するバルキー(bulky)なジアミンと酸無水物を反応させて製造してもよい。 The polyimide resin or polyamide-imide resin soluble in a solvent having a boiling point of 150° C. or lower may be produced by reacting a bulky diamine having an aromatic group with an acid anhydride.
使用可能な芳香族ジアミンとしては、特に限定されないが、エーテル(Ether)系として1,3−ビス(4−アミノフェノキシ)ベンゼン(1,3−Bis(4−aminophenoxy)benzene)、1,3−ビス(4−アミノフェノキシ)ビフェニル(1,3−Bis(4−aminophenoxy)biphenyl)、2,2'−ビス[4−(4−アミノフェノキシ)フェニル]プロパン(2,2−Bis[4−(4−aminophenoxy)phenyl]propane)、2,2−ビス[4−(4−アミノフェノキシ)フェニル]ヘキサフルオロプロパン(2,2−Bis[4−(4−aminophenoxy)phenyl]hexafluoropropane)、ビス[4−(4−アミノフェノキシ)フェニル]スルホン(Bis[4−(4−aminophenoxy)phenyl]sulfone)、ビス[4−(3−アミノフェノキシ)フェニル]スルホン(Bis[4−(3−aminophenoxy)phenyl]sufone)、4,4'−ジアミノ−2,2'−ビス(トリフルオロメチル)ジフェニルエーテル(4,4'−Diamino−2,2'−bis(trifluoromethyl)diphenyl ether)、1,4−ビス(4−アミノフェノキシ)−2,3,5−トリメチルベンゼン(1,4−Bis(4−aminophenoxy)−2,3,5−trimethylbenzene)、1,4−ビス(4−アミノフェノキシ)−2,5−ジ−t−ブチルベンゼン(1,4−Bis(4−aminophenoxy)−2,5−di−t−butylbenzene)、1,4−ビス[4−アミノ−2−(トリフルオロメチル)フェノキシ]ベンゼン(1,4−Bis[4−amino−2−(trifluoromethyl)phenoxy]benzene)、2,2−ビス[4−[4−アミノ−2−(トリフルオロメチル)フェニル]ヘキサフルオロプロパン(2,2−Bis[4−[4−amino−2−(trifluoromethyl)phenyl]hexafluoropropane)、1,3−ビス(4−アミノフェノキシ)プロパン(1,3−Bis(4−aminophenoxy)propane)、1,4−ビス(4−アミノフェノキシ)ブタン(1,4−Bis(4−aminophenoxy)butane)、1,5−ビス(4−アミノフェノキシ)ペンタン(1,5−Bis(4−aminophenoxy)pentane)、1,3−ビス(4−アミノフェノキシ)ネオペンタン(1,3−Bis(4−aminophenoxy)neopentane)、2,5−ビス(4−アミノフェノキシ)−ビフェニル(2,5−Bis(4−aminophenoxy)−biphenyl)、1,3−ビス(4−アミノフェノキシ)−5−(2−フェニルエチニル)ベンゼン(1,3−Bis(4−aminophenoxy)−5−(2−phenylethynyl)benzene)、1,3−ビス(3−アミノフェノキシ)−5−(2−フェニルエチニル)ベンゼン(1,3−Bis(3−aminophenoxy)−5−(2−phenylethynyl)benzene)、2,4−ジアミノ−4'−フェニルエチニルジフェニルエーテル(2,4−Diamino−4'−phenylethynyldiphenyl ether)、ビフェニル系として4,4'−ジアミノ−2,2'−ビス(トリフルオロメチル)ビフェニル(4,4'−Diamino−2,2'−bis(trifluoromethyl)biphenyl)、3,7−ジアミノ−2,8−ジメチルジベンゾチオフェン−5,5−ジオキシド(3,7−Diamino−2,8−dimethyldibenzothiophene−5,5−dioxide)、4,4'−ビス(4−アミノフェノキシ)ビフェニル(4,4'−Bis(4−aminophenoxy)biphenyl)、4,4'−ビス(4−アミノベンズアミド)−3,3'−ジヒドロキシビフェニル(4,4'−Bis(4−aminobenzamide)−3,3'−dihydroxybiphenyl)、2,2−ビス(3−アミノ−4−ヒドロキシフェニル)プロパン(2,2−Bis(3−amino−4−hydroxyphenyl)propane)、9,9−ビス(4−アミノフェニル)フルオレン(9,9−Bis(4−aminophenyl)fluorene)、4,4'−ジアミノジフェニルケトン(4,4'−diaminodiphenyl ketone)、2,2−ビス[4−{4−アミノ−2−(トリフルオロメチル)フェノキシ}フェニル]ヘキサフルオロプロパン(2,2−Bis[4−{4−amino−2−(trifluoromethyl)phenoxy}phenyl]hexafluoropropane)、ビス{4−(4−アミノフェノキシ)フェニル}ケトン(Bis{4−(4−aminophenoxy)phenyl}ketone)、2,2−ビス{4−(4−アミノフェノキシ)フェニル}ヘキサフルオロプロパン(2,2−Bis{4−(4−aminophenoxy)phenyl}hexafluoropropane)、2,2−ビス{4−(4−アミノフェノキシ)フェニル}プロパン(2,2−Bis{4−(4−aminophenoxy)phenyl}propane)、スルホン系として4,4'−ジアミノジフェニルスルホン(4,4'−Diaminodiphenyl sulfone)、ビス{4−(4−アミノフェノキシ)フェニル}スルホン(Bis{4−(4−aminophenoxy)phenyl}sulfone)、ビス{4−(3−アミノフェノキシ)フェニル}スルホン(Bis{4−(3−aminophenoxy)phenyl}sulfone)、3,7−ジアミノ−2,8−ジメチルベンゾチオフェン−5,5−ジオキシド(3,7−Diamino−2,8−dimethyl dibenzothiphene−5,5−dioxide)などが挙げられる。 The aromatic diamine that can be used is not particularly limited, but 1,3-bis(4-aminophenoxy)benzene (1,3-Bis(4-aminophenoxy)benzene), 1,3-as an ether type ether Bis(4-aminophenoxy)biphenyl(1,3-Bis(4-aminophenoxy)biphenyl), 2,2′-bis[4-(4-aminophenoxy)phenyl]propane(2,2-Bis[4-( 4-aminophenoxy)phenyl]propane), 2,2-bis[4-(4-aminophenoxy)phenyl]hexafluoropropane(2,2-Bis[4-(4-aminophenoxy)phenyl]hexafluoropropane), bis[4] -(4-Aminophenoxy)phenyl]sulfone (Bis[4-(4-aminophenoxy)phenyl]sulfone), bis[4-(3-aminophenoxy)phenyl]sulfone (Bis[4-(3-aminophenoxy)phenyl) sufone), 4,4'-diamino-2,2'-bis(trifluoromethyl)diphenyl ether (4,4'-Diamino-2,2'-bis(trifluoromethyl)diphenyl ether), 1,4-bis(4) -Aminophenoxy)-2,3,5-trimethylbenzene (1,4-Bis (4-aminophenoxy)-2,3,5-trimethylbenzene), 1,4-bis(4-aminophenoxy)-2,5- Di-t-butylbenzene (1,4-Bis(4-aminophenoxy)-2,5-di-t-butylbenzene), 1,4-bis[4-amino-2-(trifluoromethyl)phenoxy]benzene( 1,4-Bis[4-amino-2-(trifluoromethyl)phenoxy]benzene), 2,2-bis[4-[4-amino-2-(trifluoromethyl)phenyl]hexafluoropropane(2,2- Bis[4-[4-amino-2-(trifluoromethyl)phenyl]hexafluoropropane), 1,3-bis(4-aminophenoxy)propane (1,3-Bis(4-aminophenoxy)propane), 1,4-bis (4-aminophenoxy)butane (1,4-bis(4-aminophen) oxy)butane), 1,5-bis(4-aminophenoxy)pentane (1,5-bis(4-aminophenoxy)pentane), 1,3-bis(4-aminophenoxy)neopentane (1,3-Bis( 4-aminophenoxy)neopentane), 2,5-bis(4-aminophenoxy)-biphenyl (2,5-Bis(4-aminophenoxy)-biphenyl), 1,3-bis(4-aminophenoxy)-5-( 2-Phenylethynyl)benzene (1,3-Bis(4-aminophenoxy)-5-(2-phenylethynyl)benzene), 1,3-bis(3-aminophenoxy)-5-(2-phenylethynyl)benzene( 1,3-Bis(3-aminophenoxy)-5-(2-phenylethylene)benzene, 2,4-diamino-4′-phenylethynyl diphenyl ether (2,4-Diamino-4′-phenyldiphenylether), as a biphenyl type 4,4'-diamino-2,2'-bis(trifluoromethyl)biphenyl (4,4'-Diamino-2,2'-bis(trifluoromethyl)biphenyl), 3,7-diamino-2,8-dimethyl Dibenzothiophene-5,5-dioxide (3,7-Diamino-2,8-dimethyldibenzothiophene-5,5-dioxide), 4,4′-bis(4-aminophenoxy)biphenyl (4,4′-Bis(4 -Aminophenoxy)biphenyl), 4,4'-bis(4-aminobenzamide)-3,3'-dihydroxybiphenyl (4,4'-Bis(4-aminobenzamide)-3,3'-dihydroxybiphenyl), 2,2 -Bis(3-amino-4-hydroxyphenyl)propane (2,2-Bis(3-amino-4-hydrophenyl)propane), 9,9-bis(4-aminophenyl)fluorene (9,9-Bis( 4-aminophenyl)fluorene), 4,4′-diaminodiphenyl ketone (4,4′-diaminodiphenyl ketone), 2,2-bis[4-{4-amino-2-(trifluoromethyl)phenoxy}phenyl]hexa Fluoropropane (2,2 -Bis[4-{4-amino-2-(trifluoromethyl)phenoxy}phenyl]hexafluoropropane), bis{4-(4-aminophenoxy)phenyl}ketone (Bis{4-(4-aminophenoxy)phenyl}ketone), 2,2-bis{4-(4-aminophenoxy)phenyl}hexafluoropropane (2,2-Bis{4-(4-aminophenoxy)phenyl}hexafluoropropane), 2,2-bis{4-(4-amino) Phenoxy)phenyl}propane (2,2-Bis{4-(4-aminophenoxy)phenyl}propane), 4,4′-diaminodiphenyl sulfone (4,4′-Diaminodiphenyl sulfone) as a sulfone system, bis{4-( 4-aminophenoxy)phenyl}sulfone (Bis{4-(4-aminophenoxy)phenyl}sulfone), bis{4-(3-aminophenoxy)phenyl}sulfone (Bis{4-(3-aminophenoxy)phenyl}sulfone) , 3,7-diamino-2,8-dimethylbenzothiophene-5,5-dioxide (3,7-Diamino-2,8-dimethyldibenzothiphene-5,5-dioxide) and the like.
酸無水物としては、ピロメリト酸二無水物(Pyromellitic Dianhydride)、3,3',4,4'−ベンゾフェノンテトラカルボン酸二無水物(3,3',4,4'−benzophenone tetracarboxylic dianhydride)、ビフェニルテトラカルボン酸二無水物(biphenyl tetracarboxylic acid dianhydride)、3,4,3',4'−ジフェニルスルホンテトラ−カルボン酸二無水物(3,4,3'4'−diphenyl sulfone tetra−carboxylic dianhydride)、3,3'4,4'−ジフェニルエーテルテトラカルボン酸二無水物(3,3',4,4'−diphenyl ether tetracarboxylic acid dianhydride)、2,3,4−テトラヒドロフランテトラ−カルボン酸酢酸二無水物(2,3,4−tetrahydro furan tetra−carboxylic acid acetic acid dianhydride)、1,2,5,6−ナフタレンテトラカルボン酸二無水物(1,2,5,6−naphthalenetetracarboxylic dianhydride)、2,3,6,7−ナフタレンテトラカルボン酸二無水物(2,3,6,7−naphthalenetetracarboxylic dianhydride)、1,4,5,8−ナフタレンテトラカルボン酸二無水物(1,4,5,8−naphthalenetetracarboxylic dianhydride)、2,3,5,6−ピリジンテトラカルボン酸二無水物(2,3,5,6−pyridinetetracarboxylic dianhydride)、m−ターフェニル−3,3',4,4'−テトラカルボン酸二無水物(m−terphenyl−3,3',4,4'−tetracarboxylic dianhydride)、p−ターフェニル−3,3',4,4'−テトラカルボン酸二無水物(p−terphenyl−3,3',4,4'−tetracarboxylic dianhydride)、4,4−オキシジフタル酸二無水物(4,4−oxydiphthalic dianhydride)、1,1,1,3,3,3−ヘキサフルオロ−2、2−ビス(2,3 or 3,4−ジカルボキシフェノキシ)フェニルプロパン二無水物(1,1,1,3,3,3−hexafluoro−2,2−bis(2,3 or 3、4−dicarboxyphenoxy)phenylpropane dianhydride)、2,2、−ビス[4−(2,3 or 3,4−ジカルボキシフェノキシ)フェニルプロパン二無水物(2,2−bis[4−(2、3 or 3,4−dicarboxyphenoxy)phenyl]propane dianhydride)、1,1,1,3,3,3−ヘキサフルオロ−2,2−ビス[4−(2,3 or 3,4−ジカルボキシフェノキシ)フェニル]プロパン二無水物(1,1,1,3,3,3、−hexafluoro−2,2−bis[4−(2,3 or 3,4−dicarboxyphenoxy)phenyl] propane dianhydride)などが挙げられる。 Examples of the acid anhydride include pyromellitic dianhydride, 3,3′,4,4′-benzophenone tetracarboxylic acid dianhydride (3,3′,4,4′-benzophenone tetracarboxydyanhydride), and biphenyl. Tetracarboxylic acid dianhydride (3,4,3',4'-diphenylsulfone tetra-carboxylic acid dianhydride (3,4,3'4'-diphenylsulfone tetra-carboxylic dianhydride) 3,3'4,4'-diphenyl ether tetracarboxylic acid dianhydride (3,3',4,4'-diphenyl ether tetracarboxylic acid dianhydride), 2,3,4-tetrahydrofuran tetra-carboxylic acid acetic acid dianhydride ( 2,3,4-Tetrahydrofuran tetra-carboxylic acid acetic acid dianhydride, 1,2,5,6-naphthalene tetracarboxylic acid dianhydride (1,2,5,6-naphthalenetetracarboxylic3,2,6,3,6) ,7-Naphthalenetetracarboxylic dianhydride (2,3,6,7-naphthalenetetracarboxydian hydride), 1,4,5,8-naphthalenetetracarboxylic dianhydride (1,4,5,8-naphthalenetetracarboxylic hydride) ,2,3,5,6-Pyridinetetracarboxylic dianhydride (2,3,5,6-pyridinetetracarboxy dianhydride), m-terphenyl-3,3',4,4'-tetracarboxylic dianhydride (M-terphenyl-3,3′,4,4′-tetracarboxylic dianhydride), p-terphenyl-3,3′,4,4′-tetracarboxylic dianhydride (p-terphenyl-3,3′, 4,4'-tetracarboxy dianhydride), 4,4-oxydiphthalic dianhydride (4,4-oxydiphthalic dianhydride) , 1,1,1,3,3,3-hexafluoro-2,2-bis(2,3 or 3,4-dicarboxyphenoxy)phenylpropane dianhydride (1,1,1,3,3,3 3-hexafluoro-2,2-bis(2,3 or 3,4-dicarboxyphenoxy)phenylpropane dianhydride),2,2,-bis[4-(2,3 or 3,4-dicarboxyphenoxy)phenylpropane dianhydride Substance (2,2-bis[4-(2,3 or 3,4-dicarboxyphenoxy)phenyl]propane dianhydride), 1,1,1,3,3,3-hexafluoro-2,2-bis[4- (2,3 or 3,4-dicarboxyphenoxy)phenyl]propane dianhydride (1,1,1,3,3,3, -hexafluoro-2,2-bis[4-(2,3 or 3, 4-dicarboxyphenoxy)phenyl]propane dianhydride) and the like.
沸点が150℃を超える溶剤に溶けるポリイミド樹脂またはポリアミドイミド樹脂の場合、沸点が150℃を超える高沸点溶剤を使用するため、残存溶剤が多くて、印刷回路基板の製造時に化学銅めっき層との密着力が低下する。 In the case of a polyimide resin or a polyamide-imide resin which has a boiling point of more than 150° C., a high boiling point solvent having a boiling point of more than 150° C. is used. Adhesion is reduced.
このとき、沸点が150℃以下の溶剤には、メチルエチルケトン、ジメチルホルムアミドなどがある。 At this time, examples of the solvent having a boiling point of 150° C. or lower include methyl ethyl ketone and dimethylformamide.
上記ポリイミド樹脂またはポリアミドイミド樹脂の含量は、上記ナフタレン系エポキシ樹脂とエポキシ樹脂硬化剤の重量の和を100重量部としたとき、5から50重量部であることが好ましい。 The content of the polyimide resin or the polyamide-imide resin is preferably 5 to 50 parts by weight when the sum of the weights of the naphthalene-based epoxy resin and the epoxy resin curing agent is 100 parts by weight.
ポリイミド樹脂またはポリアミドイミド樹脂の含量が5重量部未満では接着性が低下し、50重量部を超えると、成形性が低下し、樹脂層が不均一に形成される。 If the content of the polyimide resin or the polyamide-imide resin is less than 5 parts by weight, the adhesiveness will decrease, and if it exceeds 50 parts by weight, the moldability will decrease and the resin layer will be formed unevenly.
上記樹脂付き金属箔100は、ナフタレン系エポキシ樹脂、エポキシ樹脂硬化剤、及び沸点150℃以下の溶剤に溶けるポリイミド樹脂またはポリアミドイミド樹脂を含む樹脂組成物に溶剤を添加して樹脂ワニスを製造し、上記樹脂ワニスを金属箔10の一面に塗布して樹脂層20を形成することにより製造することができる。
The resin-coated
金属箔10に樹脂ワニスを塗布する方法は特に制限されず、ロールコーター、ナイフコーター、ドクターブレードコーター、グラビアコーター、ダイコーター、マルチダイコーター、リバースコーター、リバースロールコーター等で樹脂ワニスの粘度を調節して金属箔10の表面に樹脂層20を形成することができる。
The method of applying the resin varnish to the
上記金属箔10としては、 銅箔、アルミ箔、ニッケル箔またはこれらのうち1つ以上の合金からなる金属箔10を使用する。
As the
上記金属箔10の平均表面粗さ(Ra)は0.05μmから0.2μmが好ましく、厚さは0.1μmから5μmが好ましい。
The average surface roughness (Ra) of the
上記樹脂層20は、上記金属箔10の表面に0.5μmから10μmの厚さで形成され、上記樹脂層20の硬化度は70%以上であることが好ましい。
The
樹脂層20の硬化度が70%未満では、上記樹脂付き金属箔100を回路パターンを形成する絶縁層上にプレス積層する際に樹脂層20が絶縁層と混合して印刷回路基板の製造時に化学銅めっき層との密着力が低下し、半田耐熱性も減少する。
If the degree of curing of the
上記樹脂付き金属箔100を用いて製造する印刷回路基板には、ナフタレン系エポキシ樹脂、エポキシ樹脂硬化剤、及び沸点150℃以下の溶剤に溶けるポリイミド樹脂またはポリアミドイミド樹脂を含む樹脂層が形成される。
A printed circuit board manufactured using the resin-coated
上記樹脂付き金属箔100を用いて印刷回路基板を製造する場合、剥離強度と半田耐熱性を確保しながらも、微細回路パターンを容易に加工することができる。
When a printed circuit board is manufactured using the resin-coated
次に、上記樹脂付き金属箔100を用いて微細回路パターンを有する印刷回路基板を製造する方法について説明する。
Next, a method for manufacturing a printed circuit board having a fine circuit pattern using the resin-coated
まず、上記樹脂付き金属箔100の樹脂層20が回路パターンを形成する絶縁層の表面に接するように樹脂付き金属箔100を積層する。積層後、金属箔10をエッチングして除去し、残存する樹脂層20上に回路パターンを形成する。
First, the resin-coated
回路パターンを形成する方法は、特に制限されないが、例えば、上記樹脂層20上に化学銅めっき層を形成し、パターニングされためっきレジストを形成した後、電解めっきを行って回路パターンを形成し、上記化学銅めっき層をエッチングして除去する。
The method for forming the circuit pattern is not particularly limited, but for example, after forming a chemical copper plating layer on the
このように、回路パターンを形成する絶縁層上に上記樹脂付き金属箔100を用いて樹脂層20を形成してから回路パターンを形成すると、剥離強度と半田耐熱性を確保しながらも、表面粗さを小さくして過度なエッチングを防止し、微細回路パターン形成を容易に具現することができる。
In this way, when the
しかし、上記樹脂付き金属箔100を用いて印刷回路基板を製造する方法は、特に制限されず、当業界に公知の全ての製造方法を用いてもよい。
However, the method for manufacturing a printed circuit board using the resin-coated
以下では、実施例を挙げて本発明をより具体的に説明するが、下記実施例により本発明の範囲が制限されるものではなく、本発明の理解を助けるためのものである。 Hereinafter, the present invention will be described in more detail with reference to examples. However, the scope of the present invention is not limited by the following examples and is intended to help understanding of the present invention.
<実施例1>
7.2重量部のナフタレン系エポキシ(SE−80、SHIN−A T&C)、10.2重量部のフェノールアラルキル型硬化剤(MEHC−7851S、Meiwa kasei)、7.5重量部のポリアミドイミド(沸点150℃以下の溶剤に溶解)(SORX−S(NKK))、0.6重量部のイミダゾール硬化促進剤からなるワニスを作製した。
<Example 1>
7.2 parts by weight of naphthalene-based epoxy (SE-80, SHIN-A T&C), 10.2 parts by weight of phenol aralkyl type curing agent (MEHC-7851S, Meiwa Kasei), 7.5 parts by weight of polyamide-imide (boiling point) A varnish composed of 0.6 parts by weight of an imidazole curing accelerator was prepared (dissolved in a solvent of 150° C. or lower) (SORX-S(NKK)).
<実施例2>
5.2重量部のナフタレン系エポキシ(SE−80、SHIN−A T&C)、2.3重量部のビスフェノールA系エポキシ(YD−128K、Kukdo Chemical)、9.9重量部のフェノールアラルキル型硬化剤(MEHC−7851S、Meiwa fkasei)、7.5重量部のポリアミドイミド(沸点150℃以下の溶剤に溶解)(SORX−S(NKK))、0.6重量部のイミダゾール硬化促進剤からなるワニスを作製した。
<Example 2>
5.2 parts by weight of naphthalene epoxy (SE-80, SHIN-AT&C), 2.3 parts by weight of bisphenol A epoxy (YD-128K, Kukdo Chemical), 9.9 parts by weight of phenol aralkyl type curing agent. (MEHC-7851S, Meiwa fkasei), 7.5 parts by weight of polyamide-imide (dissolved in a solvent having a boiling point of 150° C. or lower) (SORX-S(NKK)), 0.6 parts by weight of a varnish consisting of an imidazole curing accelerator. It was made.
<実施例3>
8.7重量部のナフタレン系エポキシ(SE−80、SHIN−A T&C)、8.8重量部のアミノトリアジン型ノボラック硬化剤(PS6313、GUN EI Chem.Industry Co.Ltd.)、7.5重量部のポリアミドイミド(沸点150℃以下の溶剤に溶解)(SORX−S(NKK))、0.2重量部のイミダゾール硬化促進剤からなるワニスを作製した。
<Example 3>
8.7 parts by weight of naphthalene-based epoxy (SE-80, SHIN-A T&C), 8.8 parts by weight of aminotriazine type novolac curing agent (PS6313, GUN EI Chem. Industry Co. Ltd.), 7.5 parts by weight. A varnish consisting of 10 parts by weight of polyamideimide (dissolved in a solvent having a boiling point of 150° C. or lower) (SORX-S(NKK)) and 0.2 parts by weight of an imidazole curing accelerator was prepared.
<実施例4>
7.1重量部のナフタレン系エポキシ(SE−80、SHIN−A T&C)、1.8重量部のビスフェノールA系エポキシ(YD−128K、Kukdo Chemical)、8.6重量部のアミノトリアジン型ノボラック硬化剤(PS6313、GUN EI Chem.Industry Co.Ltd.)、7.5重量部のポリアミドイミド(沸点150℃以下の溶剤に溶解)(SORX−S(NKK))、0.2重量部のイミダゾール硬化促進剤からなるワニスを作製した。
<Example 4>
7.1 parts by weight of naphthalene-based epoxy (SE-80, SHIN-AT&C), 1.8 parts by weight of bisphenol A-based epoxy (YD-128K, Kukdo Chemical), 8.6 parts by weight of aminotriazine type novolak curing. Agent (PS6313, GUN EI Chem. Industry Co. Ltd.), 7.5 parts by weight of polyamide-imide (dissolved in a solvent having a boiling point of 150°C or lower) (SORX-S (NKK)), 0.2 parts by weight of imidazole curing. A varnish consisting of the accelerator was prepared.
<実施例5>
7.2重量部のナフタレン系エポキシ(SE−80、SHIN−A T&C)、10.2重量部のフェノールアラルキル型硬化剤(MEHC−7851S、Meiwa kasei)、12.2重量部のポリアミドイミド(沸点150℃以下の溶剤に溶解)(SORX−S(NKK))、0.6重量部のイミダゾール硬化促進剤からなるワニスを作製した。
<Example 5>
7.2 parts by weight of naphthalene-based epoxy (SE-80, SHIN-AT&C), 10.2 parts by weight of phenol aralkyl type curing agent (MEHC-7851S, Meiwa Kasei), 12.2 parts by weight of polyamide-imide (boiling point) A varnish composed of 0.6 parts by weight of an imidazole curing accelerator was prepared (dissolved in a solvent of 150° C. or lower) (SORX-S(NKK)).
<実施例6>
5.6重量部のナフタレン系エポキシ(SE−80、SHIN−A T&C)、2.4重量部のNBR変形エポキシ(Polydis3615、Schill+Seilacher 「Struktol」 GmbH)、9.5重量部のフェノールアラルキル型硬化剤(MEHC−7851S、Meiwa kasei)、7.5重量部のポリアミドイミド(沸点150℃以下の溶剤に溶解)(SORX(NKK))、0.6重量部のイミダゾール硬化促進剤からなるワニスを作製した。
<Example 6>
5.6 parts by weight of naphthalene-based epoxy (SE-80, SHIN-A T&C), 2.4 parts by weight of NBR modified epoxy (Polydis 3615, Schill+Seilacher "Struktol" GmbH), 9.5 parts by weight of phenol aralkyl type curing agent. (MEHC-7851S, Meiwa kasei), 7.5 parts by weight of polyamide-imide (dissolved in a solvent having a boiling point of 150° C. or lower) (SORX(NKK)), and 0.6 parts by weight of an imidazole curing accelerator were prepared as a varnish. ..
<実施例7>
7.3重量部のナフタレン系エポキシ(SE−80、SHIN−A T&C)、1.8重量部のNBR変形エポキシ(Polydis3615、Schill+Seilacher 「Struktol」 GmbH)、8.3重量部のアミノトリアジン型ノボラック硬化剤(PS6313、GUN EI Chem.Industry Co.Ltd.)、7.5重量部のポリアミドイミド(沸点150℃以下の溶剤に溶解)(SORX−S(NKK))、0.2重量部のイミダゾール硬化促進剤からなるワニスを作製した。
<Example 7>
7.3 parts by weight of naphthalene-based epoxy (SE-80, SHIN-A T&C), 1.8 parts by weight of NBR modified epoxy (Polydis 3615, Schill+Seilacher "Struktol" GmbH), 8.3 parts by weight of aminotriazine type novolak curing. Agent (PS6313, GUN EI Chem. Industry Co. Ltd.), 7.5 parts by weight of polyamide-imide (dissolved in a solvent having a boiling point of 150°C or lower) (SORX-S (NKK)), 0.2 parts by weight of imidazole curing. A varnish consisting of the accelerator was prepared.
<実施例8>
7.2重量部のナフタレン系エポキシ(SE−80、SHIN−A T&C)、1.8重量部のクレゾールノボラック型エポキシ(YDCN−500−8P、Kukdo Chemical)、8.5重量部のアミノトリアジン型ノボラック硬化剤(PS6313、GUN EI Chem.Industry Co.Ltd.)、7.5重量部のポリアミドイミド(沸点150℃以下の溶剤に溶解)(SORX(NKK))、0.2重量部のイミダゾール硬化促進剤からなるワニスを作製した。
<Example 8>
7.2 parts by weight of naphthalene-based epoxy (SE-80, SHIN-AT&C), 1.8 parts by weight of cresol novolac type epoxy (YDCN-500-8P, Kukdo Chemical), 8.5 parts by weight of aminotriazine type. Novolak curing agent (PS6313, GUN EI Chem. Industry Co. Ltd.), 7.5 parts by weight of polyamide imide (dissolved in a solvent having a boiling point of 150°C or lower) (SORX (NKK)), 0.2 parts by weight of imidazole curing A varnish consisting of the accelerator was prepared.
<比較例1>
7.2重量部のナフタレン系エポキシ(SE−80、SHIN−A T&C)、10.2重量部のフェノールアラルキル型硬化剤(MEHC−7851S、Meiwa kasei)、7.5重量部のポリアミドイミド(沸点150℃超の溶剤に溶解)(SORX−OB(NKK))、0.6重量部のイミダゾール硬化促進剤からなるワニスを作製した。
<Comparative Example 1>
7.2 parts by weight of naphthalene-based epoxy (SE-80, SHIN-A T&C), 10.2 parts by weight of phenol aralkyl type curing agent (MEHC-7851S, Meiwa Kasei), 7.5 parts by weight of polyamide-imide (boiling point) A varnish consisting of 0.6 parts by weight of an imidazole curing accelerator was prepared (dissolved in a solvent above 150° C.) (SORX-OB(NKK)).
<比較例2>
28重量部の2,2'−ビス[4−(4−アミノフェノキシ)フェニル]プロパン、19重量部のトリメリット酸二無水物(Trimellitic anhydride)を260重量部のN−メチルピロリドン(N−methylpyrrolidone)に溶かし、80℃で加熱した後、トルエン(Toluene)を入れて3時間還流させ、生成される水分を除去した。その後、190℃で2時間維持してから、室温に冷却し、25重量部の4,4'−ジフェニルメタンジイソシアネート(4,4'−Diphenylmethane Diisocyanate)を添加して170℃で2時間加熱した後、室温に冷却して芳香族ポリアミドイミド(PAI)を合成した。合成されたポリアミドイミドの平均分子量(Mw)は120,000であった。
<Comparative example 2>
28 parts by weight of 2,2′-bis[4-(4-aminophenoxy)phenyl]propane, 19 parts by weight of trimellitic dianhydride, and 260 parts by weight of N-methylpyrrolidone (N-methylpyrrolidone). ) And heated at 80° C., toluene (Toluene) was added and the mixture was refluxed for 3 hours to remove generated water. Then, after maintaining at 190° C. for 2 hours, cooling to room temperature, adding 25 parts by weight of 4,4′-diphenylmethane diisocyanate (4,4′-Diphenylmethyl diisocyanate) and heating at 170° C. for 2 hours, After cooling to room temperature, aromatic polyamide imide (PAI) was synthesized. The average molecular weight (Mw) of the synthesized polyamideimide was 120,000.
合成したポリアミドイミド7.5重量部、7.2重量部のナフタレン系エポキシ(SE−80、SHIN−A T&C)、10.2重量部のフェノールアラルキル型硬化剤(MEHC−7851S、Meiwa kasei)、0.6重量部のイミダゾール硬化促進剤からなるワニスを作製した。 Synthesized polyamide imide 7.5 parts by weight, 7.2 parts by weight of naphthalene-based epoxy (SE-80, SHIN-AT&C), 10.2 parts by weight of phenol aralkyl type curing agent (MEHC-7851S, Meiwa kasei), A varnish consisting of 0.6 parts by weight of an imidazole curing accelerator was prepared.
<コーティング例1>
上記実施例1〜8、比較例1及び2のワニスを、それぞれ厚さ20μm、幅600mmの電解銅箔(MT−EX、三井金属)の表面処理面にダイコーターを用いて脱溶剤後の厚さが3μmになるようにコーティングした。コーティングされた銅箔を、80℃、110℃、150℃、170℃に設定された長さ2mのフローティング方式の4つの乾燥炉に2m/分の速度で通過させた。得られた樹脂付き銅箔の硬化度は90%以上であった。
<Coating example 1>
The thickness of the varnishes of Examples 1 to 8 and Comparative Examples 1 and 2 after solvent removal using a die coater on the surface-treated surface of electrolytic copper foil (MT-EX, Mitsui Metal) having a thickness of 20 μm and a width of 600 mm, respectively. Was coated so that the thickness would be 3 μm. The coated copper foil was passed at a speed of 2 m/min through four 2 m long floating type drying ovens set at 80° C., 110° C., 150° C. and 170° C. The degree of cure of the obtained resin-coated copper foil was 90% or more.
<コーティング例2>
上記実施例1のワニスを、厚さ20μm、幅600mmの電解銅箔(MT−EX、三井金属)の表面処理面にダイコーターを用いて脱溶剤後の厚さが3μmになるようにコーティングした。コーティングされた銅箔を、80℃、110℃、150℃、170℃に設定された長さ2mのフローティング方式の4つの乾燥炉に2m/分の速度で通過させた。得られた樹脂付き銅箔の硬化度は45%であった。
<Coating example 2>
The surface treated surface of the electrolytic copper foil (MT-EX, Mitsui Kinzoku) having a thickness of 20 μm and a width of 600 mm was coated with the varnish of Example 1 using a die coater so that the thickness after solvent removal would be 3 μm. .. The coated copper foil was passed at a speed of 2 m/min through four 2 m long floating type drying ovens set at 80° C., 110° C., 150° C. and 170° C. The degree of cure of the obtained resin-coated copper foil was 45%.
コーティング例2を行った場合、硬化度が45%と低いため、プレス積層時に樹脂付き銅箔の樹脂層がPPGの樹脂と混合して化学銅めっきとの密着力が低く、半田耐熱性が低下した。 When coating example 2 is performed, the degree of cure is low at 45%, so the resin layer of the resin-coated copper foil is mixed with the PPG resin during press lamination, resulting in low adhesion to chemical copper plating and reduced solder heat resistance. did.
<実験例>
上記実施例1〜8、比較例1及び2のワニスで上記コーティング例1を行って得られた10個の樹脂付き銅箔を、CCL、PPGとともに、210℃、130分間3MPaの荷重で積層した。積層後に銅箔をエッチングし、化学銅(1μm)、電気銅(20μm)をめっきした。得られた基材の銅(Cu)−樹脂層の密着力(銅(Cu)−樹脂層の間の90°剥離強度をUTMで測定:P/S)と半田耐熱性(300℃半田槽でサンプルにブリスターが発生する前までの時間を測定、最大5分間観察:T−300)のテストの結果を表1に示した。
<Experimental example>
Ten resin-coated copper foils obtained by performing the above coating example 1 with the varnishes of Examples 1 to 8 and Comparative Examples 1 and 2 were laminated together with CCL and PPG at 210° C. for 130 minutes under a load of 3 MPa. . After the lamination, the copper foil was etched and plated with chemical copper (1 μm) and electrolytic copper (20 μm). Copper (Cu)-resin layer adhesion of the obtained substrate (90° peel strength between copper (Cu)-resin layer measured by UTM: P/S) and solder heat resistance (in a 300°C solder bath) The time before the occurrence of blisters in the sample was measured and observed for a maximum of 5 minutes: T-300). The results of the test are shown in Table 1.
上記表1を参照すると、上記実施例1〜4は優れた密着力と半田耐熱性を示した。 Referring to Table 1 above, Examples 1 to 4 showed excellent adhesion and solder heat resistance.
一方、比較例1は、沸点が150℃を超える溶剤に溶けるポリアミドイミドを使用したため、コーティング性が悪く、残存溶媒が多くて、化学銅めっきとの密着力が低下した。また、比較例2は、沸点が150℃を超える溶剤に溶けるポリアミドイミドを使用したが、エポキシ樹脂、硬化剤が均一に混合されずワニスが作れなかった。 On the other hand, in Comparative Example 1, since polyamide imide which is soluble in a solvent having a boiling point of higher than 150° C. was used, the coating property was poor, the residual solvent was large, and the adhesion with the chemical copper plating was reduced. Further, in Comparative Example 2, a polyamideimide soluble in a solvent having a boiling point of higher than 150° C. was used, but the epoxy resin and the curing agent were not uniformly mixed and a varnish could not be formed.
また、実施例5は、沸点150℃以下の溶剤に溶けるポリアミドイミドを使用し、優れた密着性及び半田耐熱性を示した。但し、ポリアミドイミドの含量が多すぎてワニスの粘度が上昇して成形性が低下し、外観が不均一となった。 In addition, Example 5 used a polyamide-imide soluble in a solvent having a boiling point of 150° C. or lower, and exhibited excellent adhesion and solder heat resistance. However, the content of polyamide-imide was too high, the viscosity of the varnish increased, the moldability decreased, and the appearance became uneven.
実施例6〜8は、沸点150℃以下の溶剤に溶けるポリアミドイミドを使用したが、エポキシ樹脂の当量が200を超えて樹脂層が均一に形成されず、半田耐熱性が低下した。 In Examples 6 to 8, polyamide imide which was soluble in a solvent having a boiling point of 150° C. or lower was used, but the equivalent of the epoxy resin exceeded 200, the resin layer was not uniformly formed, and the solder heat resistance was lowered.
100 樹脂付き金属箔
10 金属箔
20 樹脂層
100 metal foil with
Claims (7)
前記樹脂層は、
ナフタレン系エポキシ樹脂と、
エポキシ樹脂硬化剤と、
沸点150℃以下の溶剤に溶けるポリイミド樹脂またはポリアミドイミド樹脂と、
を含み、
前記ナフタレン系エポキシ樹脂は、エポキシ当量が160以下であり、
前記ナフタレン系エポキシ樹脂とエポキシ樹脂硬化剤の重量の和を100重量部としたとき、前記ポリイミド樹脂またはポリアミドイミド樹脂は5〜50重量部であり、
前記樹脂層は硬化度が70%以上である、
印刷回路基板の製造のための樹脂付き金属箔。 In a resin-coated metal foil having a resin layer formed on the surface of the metal foil,
The resin layer is
Naphthalene-based epoxy resin,
An epoxy resin curing agent,
A polyimide resin or a polyamide-imide resin soluble in a solvent having a boiling point of 150° C. or lower,
Only including,
The naphthalene-based epoxy resin has an epoxy equivalent of 160 or less,
When the sum of the weight of the naphthalene-based epoxy resin and the epoxy resin curing agent is 100 parts by weight, the amount of the polyimide resin or the polyamide-imide resin is 5 to 50 parts by weight,
The resin layer has a curing degree of 70% or more,
Metal foil with resin for the production of printed circuit boards.
請求項1に記載の印刷回路基板の製造のための樹脂付き金属箔。 The naphthalene-based epoxy resin is liquid at 20±5° C.,
A resin-coated metal foil for manufacturing the printed circuit board according to claim 1.
請求項1または2に記載の印刷回路基板の製造のための樹脂付き金属箔。 The epoxy resin curing agent is selected from the group consisting of phenol aralkyl type resin, naphthol aralkyl type resin, novolac type phenol resin, nitrogen-containing novolac resin, dicyclopentadiene type phenol resin, biphenyl type phenol resin and triphenyl type phenol resin. It was at Izu Re or one or more,
Resin coated metal foil for the manufacture of printed circuit board according to claim 1 or 2.
請求項1から3のいずれか一項に記載の印刷回路基板の製造のための樹脂付き金属箔。 The resin layer is formed to a thickness of 0.5 μm to 10 μm,
Resin coated metal foil for the manufacture of printed circuit board according to any one of claims 1 to 3.
請求項1から4のいずれか一項に記載の印刷回路基板の製造のための樹脂付き金属箔。 The metal foil has an average surface roughness (Ra) of 0.05 μm to 0.2 μm,
Resin coated metal foil for the manufacture of printed circuit board according to any one of claims 1 to 4.
前記樹脂付き金属箔の金属箔を除去する段階と、
前記金属箔が除去された樹脂付き金属箔の樹脂層上に回路パターンを形成する段階と、
を含む
印刷回路基板の製造方法。 A step of laminating a resin coated metal foil according to Izu Re one of claims 1 to 5 on the insulating layer,
Removing the metal foil of the metal foil with the resin,
Forming a circuit pattern on the resin layer of the resin-coated metal foil from which the metal foil has been removed;
A method for manufacturing a printed circuit board, including:
エポキシ樹脂硬化剤と、
沸点150℃以下の溶剤に溶けるポリイミド樹脂またはポリアミドイミド樹脂と、
を含む
樹脂層が形成された、
前記ナフタレン系エポキシ樹脂は、エポキシ当量が160以下であり、
前記ナフタレン系エポキシ樹脂とエポキシ樹脂硬化剤の重量の和を100重量部としたとき、前記ポリイミド樹脂またはポリアミドイミド樹脂は5〜50重量部であり、
前記樹脂層は硬化度が70%以上である、
印刷回路基板。 Naphthalene-based epoxy resin,
An epoxy resin curing agent,
A polyimide resin or a polyamide-imide resin soluble in a solvent having a boiling point of 150° C. or lower,
A resin layer containing is formed ,
The naphthalene-based epoxy resin has an epoxy equivalent of 160 or less,
When the sum of the weight of the naphthalene-based epoxy resin and the epoxy resin curing agent is 100 parts by weight, the amount of the polyimide resin or the polyamide-imide resin is 5 to 50 parts by weight,
The resin layer has a curing degree of 70% or more,
Printed circuit board.
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