JP6685020B2 - Switching power supply - Google Patents

Description

  This disclosure relates to a switching power supply device.

  Conventionally, a switching power supply device is known. For example, Patent Document 1 discloses a substrate-mounted inverter device in which a semiconductor chip (semiconductor chip including a switching element and a diode that constitutes an inverter) is mounted on one surface of a metal substrate via a ceramic substrate. . In this device, the collector of the switching element (high side switching element) that constitutes the upper arm of the three-phase inverter is mounted on the upper arm side wiring pattern, and the collector of the switching element (low side switching element) that constitutes the lower arm of the three-phase inverter The emitter is mounted on the wiring pattern on the lower arm side. Further, the emitter of the high side switching element and the collector of the low side switching element are electrically connected by the beam lead electrodes for connecting the upper and lower arms.

JP 2001-286156 A

  By the way, in the switching power supply device as disclosed in Patent Document 1, each of the high-side switching element and the low-side switching element may be configured by a plurality of transistors. However, if a plurality of transistors (high-side transistors) that form a high-side switching element are arranged together and a plurality of transistors (low-side transistors) that form a low-side switching element are arranged together, a high-side switching element or a low-side switching element is formed. Heat may be concentrated on the element. For example, during a period in which the high-side switching element is in the on state and the low-side switching element is in the off state, the plurality of high-side transistors generate heat and the heat concentrates on the set of the plurality of high-side transistors (that is, the high-side switching element). Therefore, during a period in which the high-side switching element is in the off state and the low-side switching element is in the on state, the plurality of low-side transistors generate heat and the heat concentrates on the set of the plurality of low-side transistors (that is, the low-side switching element). become.

A switching power supply device according to one aspect of the present disclosure is a switching power supply device including a high-side switching element and a low-side switching element connected in series, and includes an insulating layer and a conductive layer provided on one surface of the insulating layer. A plurality of high-side transistors provided in the conductive layer and connected in parallel to form the high-side switching element; and a high-side transistor provided in the conductive layer and connected in parallel to form the low-side switching element. A plurality of low-side transistors and a smoothing capacitance portion provided in the conductive layer, and the high-side transistors and the low-side transistors are adjacent to each other in a one-to-one correspondence with the high-side transistors and the low-side transistors. It is arranged such, the smoothing capacitor is A plurality of capacitors provided in the conductive layer and corresponding to the plurality of high-side transistors and the plurality of low-side transistors, respectively, each of the plurality of capacitors being the plurality of high-side transistors and the plurality of low-side transistors. Among them, it is arranged so as to be adjacent to the transistor corresponding to the capacitor .

  A switching power supply device according to another aspect of the present disclosure is a switching power supply device having a high-side switching element and a low-side switching element connected in series, and is provided on an insulating layer and one surface of the insulating layer. A substrate having a conductive layer, a plurality of high-side transistors provided in the conductive layer and connected in parallel to form the high-side switching element, and a high-side transistor provided in the conductive layer and connected in parallel to the low-side A plurality of low-side transistors forming a switching element, wherein the plurality of high-side transistors and the plurality of low-side transistors are arranged such that the high-side transistors and the low-side transistors are adjacent to each other in a one-to-one correspondence; Output pattern and power supply pattern A ground pattern is formed, the plurality of high-side transistors are electrically connected to the output pattern and the power supply pattern, and the plurality of low-side transistors are electrically connected to the output pattern and the ground pattern. At least one of the power supply pattern and the ground pattern has a plurality of wiring regions electrically connected by a connecting member.

  A switching power supply device according to another aspect of the present disclosure is a switching power supply device having a high-side switching element and a low-side switching element connected in series, and is provided on an insulating layer and one surface of the insulating layer. A substrate having a conductive layer, a plurality of high-side transistors provided in the conductive layer and connected in parallel to form the high-side switching element, and a high-side transistor provided in the conductive layer and connected in parallel to the low-side A plurality of low-side transistors forming a switching element, wherein the plurality of high-side transistors and the plurality of low-side transistors are arranged such that the high-side transistors and the low-side transistors are adjacent to each other in a one-to-one correspondence; Output pattern and power supply pattern A ground pattern is formed, the plurality of high-side transistors are electrically connected to the output pattern and the power supply pattern, and the plurality of low-side transistors are electrically connected to the output pattern and the ground pattern. At least one of the power supply pattern and the ground pattern has an uninterrupted annular path.

  A switching power supply device according to another aspect of the present disclosure is a switching power supply device having a high-side switching element and a low-side switching element connected in series, and is provided on an insulating layer and one surface of the insulating layer. A substrate having a conductive layer, a high side transistor provided in the conductive layer and connected in parallel to form the high side switching element, and a low side switching element provided in the conductive layer and connected in parallel. And a smoothing capacitance section provided in the conductive layer, wherein the smoothing capacitance section is provided in the conductive layer and includes a plurality of capacitors respectively corresponding to the high side transistor and the low side transistor. Having the high side transistor and the low side The transistor and the plurality of capacitors are arranged such that a set of the high-side transistor and a capacitor corresponding to the high-side transistor and a set of the low-side transistor and a capacitor corresponding to the low-side transistor are adjacent to each other. .

  According to this disclosure, heat concentration in the high-side switching element and the low-side switching element can be reduced.

3 is a circuit diagram illustrating the configuration of the switching power supply device of Embodiment 1. FIG. 3 is a plan view illustrating the configuration of the switching power supply device of Embodiment 1. FIG. 3 is a cross-sectional view illustrating the configuration of the switching power supply device of Embodiment 1. FIG. 3 is a cross-sectional view illustrating the configuration of the switching power supply device of Embodiment 1. FIG. It is sectional drawing which illustrates the modification 1 of the connection structure of a connection member. It is sectional drawing which illustrates the modification 2 of the connection structure of a connection member. It is sectional drawing which illustrates the modification 3 of the connection structure of a connection member. It is an exploded perspective view which illustrates modification 3 of the connecting structure of a connecting member. It is sectional drawing which illustrates the modification 4 of the connection structure of a connection member. 6 is a plan view illustrating the configuration of the switching power supply device of Embodiment 2. FIG. 7 is a plan view illustrating the configuration of a switching power supply device of Embodiment 3. FIG. FIG. 11 is a plan view illustrating the configuration of a switching power supply device according to Modification 1 of Embodiment 3. 13 is a plan view illustrating the configuration of a switching power supply device according to Modification 2 of Embodiment 3. FIG. 11 is a plan view illustrating the configuration of a switching power supply device according to Modification 3 of Embodiment 3. FIG.

  Hereinafter, embodiments will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are designated by the same reference numerals, and the description thereof will not be repeated.

(Embodiment 1)
FIG. 1 illustrates the configuration of a switching power supply device 10 according to the embodiment. The switching power supply device 10 is configured to convert power supplied from a power supply (DC power supply P in this example) into output power by a switching operation and supply the output power to a drive target (motor M in this example). There is. In this example, the motor M constitutes a three-phase AC motor, and the switching power supply device 10 constitutes an inverter that converts DC power into three-phase AC power.

  The switching power supply device 10 includes a power supply line LP, a ground line LG, one or a plurality of output lines LO, one or a plurality of switching units SW, and a smoothing capacitance unit 13. The smoothing capacitance section 13 is connected between the power supply line LP and the ground line LG. The switching unit SW has a high-side switching element 11 and a low-side switching element 12 that are connected in series between the power supply line LP and the ground line LG. An intermediate point of the switching unit SW (that is, a connection point between the high side switching element 11 and the low side switching element 12) is connected to a drive target (motor M in this example) via an output line LO. The freewheeling diodes connected in parallel to the high-side switching element 11 and the low-side switching element 12 in the figure correspond to parasitic diodes parasitic on the high-side switching element 11 and the low-side switching element 12, respectively.

  In this example, the switching power supply device 10 includes three output lines (first, second and third output lines LOu, LOv, LOw) and three switching units (first, second and third switching units SWu). , SWv, SWw) are provided, one end (positive electrode) of the DC power supply P is connected to the power supply line LP, and the other end (negative electrode) of the DC power supply P is connected to the ground line LG.

  The first switching unit SWu has a first high-side switching element 11u and a first low-side switching element 12u, and the connection point between the first high-side switching element 11u and the first low-side switching element 12u is the first output line LOu. Is connected to the U-phase winding (not shown) of the motor M via.

  The second switching unit SWv has a second high-side switching element 11v and a second low-side switching element 12v, and a connection point between the second high-side switching element 11v and the second low-side switching element 12v is the second output line LOv. Is connected to the V-phase winding (not shown) of the motor M via.

  The third switching unit SWw includes a third high-side switching element 11w and a third low-side switching element 12w, and a connection point between the third high-side switching element 11w and the third low-side switching element 12w is the third output line LOw. Is connected to the W-phase winding (not shown) of the motor M via.

[Structure of switching power supply]
Next, the structure of the switching power supply device 10 according to the first embodiment will be described with reference to FIGS. 2, 3, and 4. Note that FIG. 2 is a schematic plan view illustrating the planar structure of the switching power supply device 10. 3 and 4 are schematic cross-sectional views illustrating a part of the cross-sectional structure of the switching power supply device 10, and correspond to the cross-sectional view taken along the line III-III and the line IV-IV in FIG. 2, respectively. The switching power supply device 10 includes a substrate 20.

<substrate>
The substrate 20 has an insulating layer 21, a conductive layer 22, and a heat dissipation layer 23. In this example, the substrate 20 is formed in a rectangular plate shape. In the example of FIG. 2, the longitudinal direction of the substrate 20 is the first direction X (horizontal direction in FIG. 2), and the lateral direction of the substrate 20 is the second direction Y (vertical direction in FIG. 2). Has become.

  The insulating layer 21 is made of an insulating material (such as an epoxy resin sheet) and has a plate shape. The conductive layer 22 is made of a conductive material (such as copper), is provided on one surface of the insulating layer 21, and is formed in a foil shape. The heat dissipation layer 23 is made of a heat transfer material (for example, aluminum) and is provided on the other surface of the insulating layer 21.

  In this example, the thickness of the insulating layer 21 is smaller than the thickness of each of the conductive layer 22 and the heat dissipation layer 23. The heat dissipation layer 23 is thicker than the conductive layer 22. For example, the insulating layer 21 may have a thickness of about 100 μm, the conductive layer 22 may have a thickness of about 200 μm, and the heat dissipation layer 23 may have a thickness of about 1 to 3 mm. The thermal conductivity of the insulating layer 21 is lower than the thermal conductivity of each of the conductive layer 22 and the heat dissipation layer 23. The thermal conductivity of the conductive layer 22 is higher than the thermal conductivity of the heat dissipation layer 23.

<Heat dissipation member>
Further, in this example, the heat dissipation layer 23 is connected and fixed to the heat dissipation member 24. The heat dissipation member 24 is, for example, a part of a housing (not shown) that houses the substrate 20, and is cooled by air cooling (cooling with air) or liquid cooling (cooling with liquid such as cooling water or cooling oil). Is configured.

<Fixing screw>
The board 20 is fixed to the heat dissipation member 24 by a plurality of (six in this example) fixing screws 25. The fixing screw 25 penetrates the substrate 20 and is fastened to the heat dissipation member 24. Specifically, the board 20 is provided with an insertion hole (not shown) into which the fixing screw 25 is inserted, and the heat dissipation member 24 is provided with a screw hole (not shown) to be fastened to the fixing screw 25. The fixing screw 25 is inserted into the insertion hole of the substrate 20 and fastened to the screw hole of the heat dissipation member 24. A gap is formed between the body of the fixing screw 25 and the insertion hole of the substrate 20, and an insulating member such as insulating paper (illustrated in the figure) is provided between the head of the fixing screw 25 and the conductive layer 22 of the substrate 20. Is omitted) is provided. With such a configuration, it is possible to ensure insulation between the conductive layer 22, the heat dissipation layer 23, and the heat dissipation member 24 of the substrate 20.

<Wiring pattern>
A wiring pattern is formed on the conductive layer 22. Specifically, an output pattern 30, a power supply pattern 40, and a ground pattern 50 are formed on the conductive layer 22. The output pattern 30, the power supply pattern 40, and the ground pattern 50 are formed at predetermined intervals so as not to short-circuit with each other.

<Output pattern>
The output pattern 30 is provided to connect the high side switching element 11 and the low side switching element 12 of the switching unit SW in series. That is, the output pattern 30 is a part that constitutes an intermediate part (a connection part between the high-side switching element 11 and the low-side switching element 12) of the switching part SW shown in FIG.

  In this example, the output pattern 30 has first to third output areas 301 to 303 corresponding to the first to third switching units SWu to SWw, respectively. Below, the generic name of the first to third output areas 301 to 303 is described as “output area 300”. The output region 300 is formed so as to extend in the first direction X. Specifically, the first to third output areas 301 to 303 are configured as follows.

  The first to third output regions 301 to 303 are formed so as to extend in the first direction X, and are arranged at intervals in the second direction Y orthogonal to the first direction X. In this example, the first direction X corresponds to the direction along the longitudinal direction of the substrate 20, and the second direction Y corresponds to the direction along the lateral direction of the substrate 20. The first output region 301 is arranged at one end (the lower end in FIG. 2) of the substrate 20 in the lateral direction, and the second output region 302 is arranged at the center of the substrate 20 in the lateral direction. The 3-output region 303 is arranged at the other end (the upper end in FIG. 2) of the substrate 20 in the lateral direction.

<Power supply pattern>
The power supply pattern 40 is provided to connect the power supply (DC power supply P in this example) and the high side switching element 11 of the switching unit SW. That is, the power supply pattern 40 is a part that constitutes a part of the power supply wiring LP shown in FIG.

《Power supply area》
In this example, the power supply pattern 40 has six wiring regions (first to sixth power supply regions 401 to 406). Hereinafter, the first to sixth power source areas 401 to 406 are collectively referred to as “power source area 400”.

  The plurality of power supply regions 400 are arranged at intervals along the extending direction of the output region 300, and face the output region 300 with a predetermined gap in a direction orthogonal to the extending direction of the output region 300. Specifically, the first to sixth power supply areas 401 to 406 are configured as follows.

  The first and second power supply regions 401 and 402 are arranged between the first output region 301 and the second output region 302, and are spaced from each other along the extending direction (first direction X) of the first output region 301. It is arranged. In this example, the first power supply region 401 and the second power supply region 402 are sequentially arranged from one end side in the extending direction of the first output region 301 to the other end side (from left side to right side in FIG. 2). Further, the first and second power supply regions 401 and 402 face the first output region 301 with a predetermined gap in a direction (second direction Y) orthogonal to the extending direction of the first output region 301.

  The third and fourth power supply regions 403, 404 are arranged between the second output region 302 and the third output region 303, and are spaced from each other along the extending direction (first direction X) of the second output region 302. It is arranged. In this example, the third power supply region 403 and the fourth power supply region 404 are sequentially arranged from one end side to the other end side (left side to right side in FIG. 2) of the second output region 302 in the extending direction. Further, the third and fourth power supply regions 403, 404 face the second output region 302 with a predetermined gap in a direction (second direction Y) orthogonal to the extending direction of the second output region 302.

  The fifth and sixth power supply regions 405 and 406 are arranged between the second output region 302 and the third output region 303, and are spaced from each other along the extending direction (first direction X) of the third output region 303. It is arranged. In this example, the fifth power supply region 405 and the sixth power supply region 406 are arranged in order from one end side to the other end side (left side to right side in FIG. 2) of the third output region 303 in the extending direction. The fifth and sixth power supply regions 405 and 406 face the third output region 303 with a predetermined gap in a direction (second direction Y) orthogonal to the extending direction of the third output region 303.

《Power supply contact area》
Further, in this example, the power supply pattern 40 has a power supply communication area 410. The power supply communication region 410 is electrically connected to one end (positive electrode) of the DC power supply P. In this example, the power supply communication region 410 is arranged at the edge (the right edge in FIG. 2) in the longitudinal direction of the substrate 20. In this example, the first to sixth power source regions 401 to 406 are electrically connected to the power source communication region 410 by the connecting member 200 (first to third power source connecting members 41 to 43) described later.

《Power surplus area》
Further, in this example, the power supply pattern 40 has a power supply surplus area 421. The power surplus region 421 is formed along an edge portion (upper edge portion in FIG. 2) of the substrate 20 in the lateral direction, and is connected to the power supply communication region 410.

<Ground pattern>
The ground pattern 50 is provided to connect the power supply (DC power supply P in this example) and the low-side switching element 12 of the switching unit SW. That is, the ground pattern 50 is a part that constitutes a part of the ground wiring LG shown in FIG.

《Ground area》
In this example, the ground pattern 50 has nine wiring regions (first to ninth ground regions 501 to 509). Hereinafter, the first to ninth ground areas 501 to 509 are collectively referred to as “ground area 500”.

  Similar to the plurality of power supply regions 400, the plurality of ground regions 500 are arranged at intervals along the extending direction of the output region 300 and have a predetermined distance from the output region 300 in a direction orthogonal to the extending direction of the output region 300. They are facing each other with a gap. Specifically, the first to ninth ground areas 501 to 509 are configured as follows.

  The first to third ground regions 501 to 503 are arranged between the first output region 301 and the second output region 302, and are spaced from each other along the extending direction (first direction X) of the first output region 301. It is arranged. In this example, the first ground region 501, the second ground region 502, and the third ground region 503 are sequentially arranged from one end side in the extending direction of the first output region 301 to the other end side (from left side to right side in FIG. 2). Lined up. The first to third ground areas 501 to 503 are opposed to the first output area 301 with a predetermined gap in a direction (second direction Y) orthogonal to the extending direction of the first output area 301.

  The fourth to sixth ground regions 504 to 506 are arranged between the second output region 302 and the third output region 303, and are spaced from each other along the extending direction (first direction X) of the second output region 302. It is arranged. In this example, the fourth ground region 504, the fifth ground region 505, and the sixth ground region 506 are sequentially arranged from one end side in the extending direction of the second output region 302 to the other end side (from left side to right side in FIG. 2). Lined up. The fourth to sixth ground regions 504 to 506 are opposed to the second output region 302 with a predetermined gap in a direction (second direction Y) orthogonal to the extending direction of the second output region 302.

  The seventh to ninth ground areas 507 to 509 are arranged between the second output area 302 and the third output area 303, and are spaced from each other along the extending direction (first direction X) of the third output area 303. It is arranged. In this example, the seventh ground region 507, the eighth ground region 508, and the ninth ground region 509 are sequentially arranged from one end side in the extending direction of the third output region 303 to the other end side (from left side to right side in FIG. 2). Lined up. In addition, the seventh to ninth ground regions 507 to 509 face the third output region 303 with a predetermined gap in a direction (second direction Y) orthogonal to the extending direction of the third output region 303.

《Ground contact area》
Further, in this example, the ground pattern 50 has a ground connection region 510. The ground connection region 510 is electrically connected to the other end (negative electrode) of the DC power supply P. In this example, the ground communication region 510 is arranged at the longitudinal edge (the right edge in FIG. 2) of the substrate 20, and is arranged side by side with the power communication region 410 in the lateral direction of the substrate 20 with a predetermined gap. There is.

《Ground connection area》
In addition, in this example, the ground pattern 50 has first to third ground connection regions 511 to 513.

  The first ground connection region 511 is formed to extend in the first direction X and is arranged between the first output region 301 and the second output region 302. The first and second power supply regions 401 and 402 and the first to third ground regions 501 to 503 are arranged between the first output region 301 and the first ground connection region 511. The first and second power supply regions 401 and 402 face the first ground connection region 511 with a predetermined gap in a direction (second direction Y) orthogonal to the extending direction of the first ground connection region 511, The first to third ground regions 501 to 503 are connected to the first ground connection region 511.

  The second ground connection region 512 is formed so as to extend in the first direction X and is arranged between the second output region 302 and the second output region 303. The third and fourth power supply regions 403 and 404 and the fourth to sixth ground regions 504 to 506 are arranged between the second output region 302 and the second ground connection region 512. The third and fourth power supply regions 403, 404 face the second ground connection region 512 with a predetermined gap in a direction (second direction Y) orthogonal to the extending direction of the second ground connection region 512, The fourth to sixth ground regions 504 to 506 are connected to the second ground connection region 512. The fifth and sixth power source regions 405 and 406 and the seventh to ninth ground regions 507 to 509 are arranged between the second ground connection region 512 and the third output region 303. The fifth and sixth power supply regions 405, 406 face the second ground connection region 512 with a predetermined gap in a direction (second direction Y) orthogonal to the extending direction of the second ground connection region 512, The seventh to ninth ground regions 507 to 509 are connected to the second ground connection region 512.

  The third ground connection region 513 is formed so as to extend in the second direction Y and is arranged between the second output region 302 and the power supply communication region 410. Then, the third ground connection region 513 connects the ground connection region 510 to the first and second connection regions 511 and 512.

《Ground surplus area》
Further, in this example, the ground pattern 50 has a ground surplus region 521. The ground surplus region 521 is formed along an edge portion (lower edge portion in FIG. 2) of the substrate 20 in the lateral direction, and is connected to the ground contact region 510.

<Arrangement of power supply area and ground area>
Further, the plurality of power source regions 400 and the plurality of ground regions 500 are arranged such that the power regions 400 and the ground regions 500 are alternately arranged in the direction along the extending direction of the output region 300. Further, the plurality of power source regions 400 and the plurality of ground regions 500 are arranged so that the adjacent power source regions 400 and the ground regions 500 face each other with a predetermined gap.

  Specifically, the extension of the first output region 301 is between the first output region 301 and the second output region 302 (between the first output region 301 and the first ground connection region 511 in the example of FIG. 2). The first ground region 501, the first power region 401, the second ground region 502, and the second power region 402 from one end side to the other end side (from left side to right side in FIG. 2) of the first direction X along the direction. The third ground area 503 is arranged in order. The first power source region 401 faces the first and second ground regions 501 and 502 with a predetermined gap therebetween, and the second power source region 402 includes the second and third ground regions 502 and 503, respectively. And are opposed to each other with a predetermined gap.

  Further, between the second output region 302 and the third output region 303 (between the second output region 302 and the second ground connection region 512 in the example of FIG. 2), along the extending direction of the second output region 302. From one end side to the other end side (from left side to right side in FIG. 2) of the first direction X, the fourth ground region 504, the third power region 403, the fifth ground region 505, the fourth power region 404, and the sixth ground region. Regions 506 are arranged in order. The third power source region 403 opposes each of the fourth and fifth ground regions 504, 505 with a predetermined gap, and the fourth power source region 404 each of the fifth and sixth ground regions 505, 506. And are opposed to each other with a predetermined gap.

  Further, between the second output region 302 and the third output region 303 (between the second ground connection region 512 and the third output region 303 in the example of FIG. 2), along the extending direction of the third output region 303. The seventh ground region 507, the fifth power region 405, the eighth ground region 508, the sixth power region 406, and the ninth ground from one end side to the other end side (left side to right side in FIG. 2) of the first direction X. The area 509 is arranged in order. The fifth power source region 405 faces each of the seventh and eighth ground regions 507 and 508 with a predetermined gap therebetween, and the sixth power source region 406 includes each of the eighth and ninth ground regions 508 and 509. And are opposed to each other with a predetermined gap.

<High-side switching element and high-side transistor>
Further, in this switching power supply device 10, the high side switching element 11 is provided on the conductive layer 22 of the substrate 20. The high-side switching element 11 is composed of a plurality of high-side transistors 110. Specifically, the high side switching device 11 is configured by connecting a plurality of high side transistors 110 in parallel. That is, the switching power supply device 10 includes a plurality of high-side transistors 110 that form the high-side switching element 11.

  The high side transistor 110 is connected to the power supply pattern 40 and the output pattern 30. In this example, the high-side transistor 110 is surface-mounted on the power supply pattern 40 and connected to the output pattern 30. Specifically, the high side transistor 110 is mounted on the power supply pattern 40. Then, one end (drain) of the high-side transistor 110 is formed in a flat plate shape and arranged at the bottom of the main body of the high-side transistor 110, and is joined to the surface of the power supply pattern 40 by soldering. The other end (source) of the high-side transistor 110 extends from the main body side portion of the high-side transistor 110 to the output pattern 30 and is joined to the surface of the output pattern 30 by soldering. The gate of the high side transistor 110 is electrically connected to a gate wiring (not shown). For example, the high side transistor 110 is composed of a surface mount type field effect transistor (FET).

  Specifically, in this example, the conductive layer 22 of the substrate 20 is provided with the first to third high side switching elements 11u to 11w, and each of the first to third high side switching elements 11u to 11w has four high sides. It is configured by the side transistor 110.

  The four high-side transistors 110 that form the first high-side switching element 11u are arranged at intervals in the first direction X along the extending direction of the first output region 301, and among these four high-side transistors 110, The two high-side transistors 110 are surface-mounted on the first power supply region 401 and are connected to the first output region 301, and the remaining two high-side transistors 110 are surface-mounted on the second power supply region 402 and are first output. It is connected to the area 301.

  The four high-side transistors 110 forming the second high-side switching element 11v are arranged at intervals in the first direction X along the extending direction of the second output region 302, and among these four high-side transistors 110, The two high-side transistors 110 are surface-mounted on the third power supply region 403 and are connected to the second output region 302, and the remaining two high-side transistors 110 are surface-mounted on the fourth power supply region 404 and are second output. It is connected to the area 302.

  The four high-side transistors 110 forming the third high-side switching element 11w are arranged at intervals in the first direction X along the extending direction of the third output region 303, and among these four high-side transistors 110, The two high-side transistors 110 are surface-mounted in the fifth power supply region 405 and connected to the third output region 303, and the remaining two high-side transistors 110 are surface-mounted in the sixth power supply region 406 and third-output. It is connected to the area 303.

<Low-side switching element and low-side transistor>
Further, in this switching power supply device 10, the low-side switching element 12 is provided on the conductive layer 22 of the substrate 20. The low-side switching element 12 is composed of a plurality of low-side transistors 120. Specifically, the low-side switching element 12 is configured by connecting a plurality of low-side transistors 120 in parallel. That is, the switching power supply device 10 includes a plurality of low-side transistors 120 that form the low-side switching element 12.

  The low side transistor 120 is connected to the ground pattern 50 and the output pattern 30. In this example, the low-side transistor 120 is surface-mounted on the output pattern 30 and connected to the ground pattern 50. Specifically, the low side transistor 120 is mounted on the output pattern 30. Then, one end (drain) of the low-side transistor 120 is formed in a flat plate shape and arranged at the bottom of the main body of the low-side transistor 120, and is joined to the surface of the output pattern 30 by soldering. The other end (source) of the low-side transistor 120 extends from the main body side portion of the low-side transistor 120 to the ground pattern 50 and is joined to the surface of the ground pattern 50 by soldering. The gate of the low-side transistor 120 is electrically connected to the gate wiring (not shown). For example, the low-side transistor 120 is composed of a surface-mount type field effect transistor (FET).

  Specifically, in this example, the conductive layer 22 of the substrate 20 is provided with the first to third low side switching elements 12u to 12w, and each of the first to third low side switching elements 12u to 12w is four low side transistors 120. It is composed by.

  The four low-side transistors 120 constituting the first low-side switching element 12u are arranged at intervals in the first direction X along the extending direction of the first output region 301, and one of the four low-side transistors 120 is low-side. The transistor 120 is surface-mounted on the first output region 301 and connected to the first ground region 501, and the two low-side transistors 120 are surface-mounted on the first output region 301 and connected to the second ground region 502. One low-side transistor 120 is surface-mounted on the first output region 301 and connected to the third ground region 503.

  The four low-side transistors 120 constituting the second low-side switching element 12v are arranged at intervals in the first direction X along the extending direction of the second output region 302, and one of the four low-side transistors 120 is low-side. The transistor 120 is surface-mounted on the second output region 302 and connected to the fourth ground region 504, and the two low-side transistors 120 are surface-mounted on the second output region 302 and connected to the fifth ground region 505, and the rest. One low-side transistor 120 is surface-mounted on the second output region 302 and connected to the sixth ground region 506.

  The four low-side transistors 120 configuring the third low-side switching element 12w are arranged at intervals in the first direction X along the extending direction of the third output region 303, and one of the four low-side transistors 120 is a low-side transistor. The transistor 120 is surface-mounted on the third output region 303 and connected to the seventh ground region 507, and the two low-side transistors 120 are surface-mounted on the third output region 303 and connected to the eighth ground region 508. One low-side transistor 120 is surface-mounted on the third output region 303 and connected to the ninth ground region 509.

<Arrangement of high-side transistor and low-side transistor>
Further, in this switching power supply device 10, the plurality of high-side transistors 110 forming one high-side switching element 11 and the plurality of low-side transistors 120 forming one low-side switching element 12 are arranged along the extending direction of the output region 300. In the first direction X, the high-side transistors 110 and the low-side transistors 120 are arranged in the first direction X so as to be adjacent to each other in a one-to-one manner. The direction of the terminal of the low-side transistor 120 (the terminal extending from the body side portion toward the ground region 500) is the direction of the terminal of the high-side transistor 110 (the terminal extending from the body side portion toward the output region 300). It is in the opposite direction to that of.

  Specifically, the four high-side transistors 110 forming the first high-side switching element 11u and the four low-side transistors 120 forming the first low-side switching element 12u are the first along the extending direction of the first output region 301. One low side transistor 120, two high side transistors 110, two low side transistors 120, two high side transistors 110, and one low side from one end side to the other end side (left side to right side in FIG. 2) in the direction X. The transistors 120 are arranged in the first direction X so as to be arranged in order.

  Further, the four high-side transistors 110 forming the second high-side switching element 11v and the four low-side transistors 120 forming the second low-side switching element 12v are arranged in the first direction X along the extending direction of the second output region 302. One low side transistor 120, two high side transistors 110, two low side transistors 120, two high side transistors 110, and one low side transistor 120 from one end side to the other end side (from left side to right side in FIG. 2). Are arranged in the first direction X so as to be arranged in order.

  Further, the four high-side transistors 110 forming the third high-side switching element 11w and the four low-side transistors 120 forming the third low-side switching element 12w are arranged in the first direction X along the extending direction of the third output region 303. One low side transistor 120, two high side transistors 110, two low side transistors 120, two high side transistors 110, and one low side transistor 120 from one end side to the other end side (from left side to right side in FIG. 2). Are arranged in the first direction X so as to be arranged in order.

<Smoothing capacitor and capacitor>
Further, in this switching power supply device 10, the smoothing capacitance portion 13 is provided on the conductive layer 22 of the substrate 20. The smoothing capacitance section 13 is composed of a plurality of capacitors 130. That is, the switching power supply device 10 includes a plurality of capacitors 130 that form the smoothing capacitance unit 13.

  The plurality of capacitors 130 are connected to the power supply pattern 40 and the ground pattern 50. In this example, the capacitor 130 is surface-mounted on the power supply pattern 40 and the ground pattern 50. Specifically, the capacitor 130 is placed so as to straddle the power supply pattern 40 and the ground pattern 50, one end (positive electrode) thereof is joined to the surface of the power supply pattern 40 by soldering, and the other end (negative electrode) is soldered. Is joined to the surface of the ground pattern 50. For example, the capacitor 130 is composed of an electrolytic capacitor, a film capacitor, a ceramic capacitor, or the like.

  The capacitors 130 correspond to the high-side transistors 110 and the low-side transistors 120, respectively. Each of the plurality of capacitors 130 is arranged to be adjacent to the transistor corresponding to the capacitor 130 among the plurality of high side transistors 110 and the plurality of low side transistors 120. In this example, the plurality of capacitors 130 are arranged at intervals in the first direction X along the arrangement direction (the extending direction of the output region 300) of the plurality of high-side transistors 110 and the plurality of low-side transistors 120. In addition, each of the plurality of capacitors 130 is a high-side transistor in a second direction Y that is orthogonal to a first direction X along the arrangement direction of the plurality of high-side transistors 110 and the plurality of low-side transistors 120 (the extending direction of the output region 300). 110 and the low side transistor 120 are arranged adjacent to the transistor corresponding to the capacitor 130. In other words, the plurality of high-side transistors 110, the plurality of low-side transistors 120, and the plurality of capacitors 130 are a set of the high-side transistor 110 and the capacitor 130 corresponding to the high-side transistor 110, the low-side transistor 120, and the pair thereof. The pair of capacitors 130 corresponding to the low-side transistors 120 are arranged adjacent to each other.

  Specifically, in this example, 24 capacitors 130 corresponding to the 12 high-side transistors 110 and 12 low-side transistors 120 provided on the conductive layer 22 of the substrate 20 are provided.

  The four capacitors 130 respectively corresponding to the four high-side transistors 110 forming the first high-side switching element 11u are arranged along the arrangement direction of the four high-side transistors 110 (extending direction of the first output region 301). The four high-side transistors 110 are provided in the vicinity of the four high-side transistors 110 at intervals in the one direction X. Two of the four capacitors 130 are surface-mounted on the first power supply region 401 and the first ground connection region 511, and the remaining two capacitors 130 are on the second power supply region 402 and the first power supply region 402. It is surface-mounted on the ground connection region 511.

  The four capacitors 130 respectively corresponding to the four high-side transistors 110 forming the second high-side switching element 11v are arranged along the arrangement direction of the four high-side transistors 110 (extending direction of the second output region 302). The four high-side transistors 110 are provided in the vicinity of the four high-side transistors 110 at intervals in the one direction X. Two of the four capacitors 130 are surface-mounted on the third power supply region 403 and the second ground connection region 512, and the remaining two capacitors 130 are the fourth power supply region 404 and the second power supply region 404. It is surface-mounted on the ground connection region 512.

  The four capacitors 130 respectively corresponding to the four high-side transistors 110 configuring the third high-side switching element 11w are arranged along the arrangement direction of the four high-side transistors 110 (extending direction of the third output region 303). The four high-side transistors 110 are provided in the vicinity of the four high-side transistors 110 at intervals in the one direction X. Two of the four capacitors 130 are surface-mounted on the fifth power supply region 405 and the second ground connection region 512, and the remaining two capacitors 130 are the sixth power supply region 406 and the second power supply region 406. It is surface-mounted on the ground connection region 512.

  The four capacitors 130 respectively corresponding to the four low-side transistors 120 constituting the first low-side switching element 12u have the first direction X along the arrangement direction of these four low-side transistors 120 (extending direction of the first output region 301). Are provided at intervals and are provided near the four low-side transistors 120, respectively. One of these four capacitors 130 is surface-mounted on the first power supply region 401 and the first ground region 501, and one capacitor 130 is on the first power supply region 401 and the second ground region 502. Surface mounted on the second power supply region 402 and the second ground region 502, and the remaining capacitor 130 on the second power supply region 402 and the third ground region 503. Surface mounted.

  The four capacitors 130 respectively corresponding to the four low-side transistors 120 configuring the second low-side switching element 12v have the first direction X along the arrangement direction of these four low-side transistors 120 (extending direction of the second output region 302). Are provided at intervals and are provided near the four low-side transistors 120, respectively. One of the four capacitors 130 is surface-mounted on the third power supply region 403 and the fourth ground region 504, and one capacitor 130 is on the third power supply region 403 and the fifth ground region 505. And one capacitor 130 is surface-mounted on the fourth power supply region 404 and the fifth ground region 505, and the remaining one capacitor 130 is mounted on the fourth power supply region 404 and the fifth ground region 505. Surface mounted.

  The four capacitors 130 respectively corresponding to the four low-side transistors 120 configuring the third low-side switching element 12w have the first direction X along the arrangement direction of these four low-side transistors 120 (extending direction of the third output region 303). Are provided at intervals and are provided near the four low-side transistors 120, respectively. One of the four capacitors 130 is surface-mounted on the fifth power supply region 405 and the seventh ground region 507, and one capacitor 130 is mounted on the fifth power supply region 405 and the eighth ground region 508. Is surface-mounted on the sixth power supply region 406 and the eighth ground region 508, and the remaining capacitor 130 is surface-mounted on the sixth power supply region 406 and the ninth ground region 509. Surface mounted.

<Connecting member>
In the switching power supply device 10, at least one of the power supply pattern 40 and the ground pattern 50 has a plurality of wiring regions (a part of the wiring pattern formed in the conductive layer 22) electrically connected by the connection member 200. Have In this example, the power supply pattern 40 has first to sixth power supply regions 401 to 406 electrically connected by the first to third power supply connection members 41 to 43 (connection member 200). In addition, in FIG. 2, the 1st-3rd power supply connection members 41-43 (connection member 200) are illustrated by the dashed-two dotted line.

  The first power supply connection member 41 electrically connects the power supply communication area 410, the first power supply area 401, the second power supply area 402, the third power supply area 403, and the fourth power supply area 404. The second power source connecting member 42 electrically connects the third power source region 403 and the fifth power source region 405. The third power source connecting member 43 electrically connects the fourth power source region 404 and the sixth power source region 406.

  In addition, in this example, the connection member 200 is configured by a plate-shaped conductor (so-called bus bar). Specifically, the connecting member 200 is formed in a plate shape and faces the conductive layer 22 at a distance from the main body portion 201, and one of the plurality of wiring regions of the conductive layer 22 from the main body portion 201. And an extension portion 202 that extends. For example, the first power supply connection member 41 includes a main body 201 facing the second output area 302 with a space therebetween, and five wiring areas of the main body 201 to the power supply pattern 40 (a power supply communication area 410 and a first power supply area 401). And a second power source region 402, a third power source region 403, and a fourth power source region 404).

  Further, in this example, the connecting member 200 is joined to the plurality of wiring regions of the conductive layer 22 by soldering. For example, the five extending portions 202 of the first power supply connecting member 41 are provided in the five wiring areas of the power supply pattern 40 (power supply communication area 410, first power supply area 401, second power supply area 402, third power supply area 403, and third power supply area 403). 4 power supply regions 404) are respectively joined by solder.

  In this example, the material forming the connecting member 200 is the same as the material forming the heat dissipation layer 23. In this example, the portion of the connecting member 200 that is to be joined to the plurality of wiring regions by solder is plated to enable joining by solder. For example, the first power supply connection member 41 and the heat dissipation layer 23 are made of aluminum, and the five wiring regions (the power supply connection region 410, the first power supply region 401, and the second power supply) of the power supply pattern 40 in the first power supply connection member 41. The five extension parts 202 joined to the region 402, the third power source region 403, and the fourth power source region 404) by solder are plated with nickel (a material for enabling soldering).

[Effects of First Embodiment]
As described above, in the switching power supply device 10, the high-side transistor 110 and the plurality of low-side transistors 120 are arranged so that the high-side transistor 110 and the low-side transistor 120 are adjacent to each other one-on-one. With such a configuration, heat generated in one of the high-side transistor 110 and the low-side transistor 120 adjacent to each other in a one-to-one manner can be transferred to the other transistor via the substrate 20. Specifically, during the period in which the high-side switching element 11 is in the on state and the low-side switching element 12 is in the off state, heat generated in the high-side transistor 110 in the on state passes through the substrate 20 and the low side in the off state. It can be transmitted to the transistor 120. On the other hand, during a period in which the high-side switching element 11 is in the off state and the low-side switching element 12 is in the on state, heat generated in the low-side transistor 120 in the on state is transmitted to the high-side transistor 110 in the off state via the substrate 20. Can be transmitted. Thereby, heat concentration in the high-side switching element 11 and the low-side switching element 12 can be reduced.

  When the smoothing capacitance section 13 is provided on the conductive layer 22 of the substrate 20 together with the high-side transistor 110 and the low-side transistor 120, the smoothing capacitance section 13 is not provided on the conductive layer 22 of the substrate 20 (for example, the high-side transistor 110 and the low-side transistor 110). The wiring path from the high-side transistor 110 and the low-side transistor 120 to the smoothing capacitor 13 can be shortened more than in the case where the smoothing capacitor 13 is provided on a substrate different from the substrate 20 on which the transistor 120 is provided). As a result, the parasitic inductance in the wiring path from the high-side transistor 110 and the low-side transistor 120 to the smoothing capacitor 13 can be reduced, so that the surge voltage caused by the switching operation of the high-side transistor 110 and the low-side transistor 120 can be reduced. be able to.

  Further, by arranging the plurality of capacitors 130 configuring the smoothing capacitance unit 13 so as to be respectively adjacent to the high-side transistor 110 and the plurality of low-side transistors 120, the high-side transistor 110 (or the low-side transistor 120) is changed to the capacitor 130. The wiring path to reach can be shortened. Thereby, the surge voltage caused by the switching operation of the high-side transistor 110 and the low-side transistor 120 can be reduced.

  In addition, a plurality of high-side transistors 110 and a pair of capacitors 130 corresponding to the high-side transistors 110 and a pair of low-side transistors 120 and capacitors 130 corresponding to the low-side transistors 120 are adjacent to each other. By arranging 110, the plurality of low-side transistors 120, and the plurality of capacitors 130, it is possible to shorten the wiring path formed between the high-side transistor 110, the low-side transistor 120, and the capacitor 130. Thereby, the surge voltage caused by the switching operation of the high-side transistor 110 and the low-side transistor 120 can be reduced.

  In the switching power supply device 10, the plurality of high-side transistors 110 and the plurality of low-side transistors 120 are arranged in the first direction X so that the high-side transistors 110 and the low-side transistors 120 are adjacent to each other in the first direction X in a one-to-one manner. It is arranged. Each of the plurality of capacitors 130 is arranged so as to be adjacent to the transistor corresponding to the capacitor 130 among the high side transistor 110 and the plurality of low side transistors 120 in the second direction Y orthogonal to the first direction X. . With such a configuration, the difference in the wiring distance between the capacitors 130 and the transistors (the high-side transistor 110 or the low-side transistor 120) can be reduced among the plurality of capacitors 130, so that the heat generation variation in the plurality of capacitors 130 can be reduced. (Concentration of heat on some capacitors 130 due to current concentration on some capacitors 130) can be reduced.

  In addition, the power supply pattern 40 includes a plurality of wiring regions (first to sixth power supply regions 401 to 401 in this example) electrically connected by the connection member 200 (first to third power supply connection members 41 to 43 in this example). 406). With such a configuration, the degree of freedom in designing the power supply pattern 40 (wiring pattern) can be improved. Thereby, the degree of freedom of arrangement of the high side transistor 110 and the low side transistor 120 can be improved.

  In addition, the connection member 200 (first to third power supply connection members 41 to 43 in this example) is configured by a conductor formed in a plate shape, so that the wiring region of the conductive layer 22 (first to sixth in this example). The heat transferred to the power supply regions 401 to 406) can be released from the connection member 200. Thereby, heat dissipation can be improved.

  Further, the thermal expansion coefficient of the connection member 200 is set by making the material forming the connection member 200 (first to third power supply connection members 41 to 43 in this example) the same as the material forming the heat dissipation layer 23. It is possible to match the coefficient of thermal expansion of 23. As a result, the connection member 200 can be deformed so as to correspond to the deformation of the heat dissipation layer 23 due to the temperature rise, so that the reliability of the switching power supply device 10 can be improved.

  Also, by connecting the connecting member 200 (first to third power source connecting members 41 to 43 in this example) to the wiring region of the conductive layer 22 (first to sixth power source regions 401 to 406 in this example) by soldering. The connection structure of the connection member 200 can be simplified as compared with the case where the connection member 200 is screwed to the wiring region of the conductive layer 22.

  In addition, solder is attached to a portion of the connecting member 200 (in this example, the first to third power source connecting members 41 to 43) that is joined to the wiring region (in this example, the first to sixth power source regions 401 to 406) by soldering. Even if the connecting member 200 is made of a material that is not suitable for joining by soldering, the connecting member 200 is soldered to the wiring region of the conductive layer 22 by performing a plating process for enabling joining by soldering. Can be joined. Therefore, the degree of freedom in selecting the material forming the connecting member 200 can be improved.

(Modification 1 of connection structure of connection member)
FIG. 5 illustrates Modification 1 of the connection structure of the connection member 200. In FIG. 5, the connection structure between the first power supply connecting member 41 and the third power supply region 403 is taken as an example.

  In this example, the connection member 200 (the first power supply connection member 41 in the example of FIG. 5) is composed of a plate-shaped conductor (so-called bus bar). Specifically, the connecting member 200 is formed in a plate shape and is opposed to the conductive layer 22 with a space therebetween, and one of a plurality of wiring regions from the main body 201 to the conductive layer 22 (see FIG. In the example of No. 5, it has the extension part 202 extended toward the 3rd power supply area | region 403).

  The substrate 20 is provided with a first through hole 21h, a second through hole 22h, and a third through hole 23h. The first through hole 21h penetrates the insulating layer 21 in the thickness direction. The second through hole 22h penetrates any one of the plurality of wiring regions of the conductive layer 22 (third power source region 403 in the example of FIG. 5) in the thickness direction to communicate with the first through hole 21h. The third through hole 23h penetrates the heat dissipation layer 23 in the thickness direction and communicates with the first through hole 21h.

  The extended portion 202 of the connection member 200 (the first power supply connection member 41 in the example of FIG. 5) is inserted into the first through hole 21h, the second through hole 22h, and the third through hole 23h, and the conductive layer 22 is inserted. Of the plurality of wiring regions, the wiring region (the third power source region 403 in the example of FIG. 5) provided with the second through hole 22h is joined by solder (solder portion 26).

  The extended portion 202 and the third through hole of the connecting member 200 (the first power supply connecting member 41 in the example of FIG. 5) inserted into the first through hole 21h, the second through hole 22h, and the third through hole 23h. The opening area of the third through hole 23h is larger than the opening area of the first through hole 21h so as to avoid contact with the inner wall of 23h.

  Further, in this example, the material forming the connecting member 200 (the first power supply connecting member 41 in the example of FIG. 5) is the same as the material forming the heat dissipation layer 23. Further, in this example, the portion of the connecting member 200 that is joined to the plurality of wiring regions by solder (the extending portion 202 of the first power supply connecting member 41 in the example of FIG. 5) can be joined by solder. Has been subjected to a plating treatment.

  As described above, the connection member 200 (the first power supply connection member 41 in the example of FIG. 5) is joined to the wiring region of the conductive layer 22 (the third power supply region 403 in the example of FIG. 5) by soldering, so that the connection member The connecting structure of the connecting member 200 can be simplified as compared with the case where 200 is screwed to the wiring region of the conductive layer 22.

(Modification 2 of connection structure of connection member)
FIG. 6 illustrates Modification Example 2 of the connection structure of the connection member 200. In FIG. 6, the connection structure between the first power supply connection member 41 and the third power supply region 403 is taken as an example.

  In this example, the connection member 200 (the first power supply connection member 41 in the example of FIG. 6) is composed of a plate-shaped conductor (so-called bus bar). Then, the switching power supply device 10 includes a nut 27 joined to any one of the plurality of wiring regions of the conductive layer 22 (third power source region 403 in the example of FIG. 6) by solder (solder portion 26), and a connecting member. 200 (the first power supply connecting member 41 in the example of FIG. 6) and a bolt 28 that is fastened to the nut 27.

  In this example, the material forming the connecting member 200 (the first power supply connecting member 41 in the example of FIG. 6) is the same as the material forming the heat dissipation layer 23.

  As described above, the nut 27 is joined to the wiring region of the conductive layer 22 (the third power source region 403 in the example of FIG. 6) by soldering, and the bolt 28 connects the connecting member 200 (the first power source connecting member 41 in the example of FIG. 6). ) And is fastened to the nut 27 by joining the connecting member 200 to the wiring region of the conductive layer 22 by soldering, even when the connecting member 200 is made of a material not suitable for joining by soldering. can do. Therefore, the degree of freedom in selecting the material forming the connecting member 200 can be improved.

(Modification 3 of connection structure of connection member)
7 and 8 illustrate Modification 3 of the connection structure of the connection member 200. 7 and 8, the connection structure between the first power supply connecting member 41 and the third power supply region 403 is taken as an example.

  The connection structure of the connection member 200 (the first power supply connection member 41 in the example of FIGS. 7 and 8) is fixed by screwing the connection member 200 to the substrate 20 (specifically, the conductive layer 22) with the connecting screw 60. The structure includes a base 71, an insulating member 72, a washer 73, and a connecting screw 60.

  The pedestal portion 71 is made of a conductive material (for example, metal) and is provided on the conductive layer 22. Specifically, the pedestal portion 71 is provided in a connecting portion between the connecting member 200 and the conductive layer 22 (a portion to which the connecting member 200 should be connected, the third power source region 403 in the example of FIG. 7).

  Further, in this example, the pedestal surface of the pedestal portion 71 (the upper surface in FIG. 2) is formed in a rectangular shape. An insertion hole for inserting the connecting screw 60 is provided at the center of the base 71. The diameter of the insertion hole of the pedestal portion 71 is larger than the outer diameter of the body portion of the connecting screw 60.

  The connection member 200 is placed on the pedestal surface of the pedestal portion 71. In this example, the plate-shaped connecting member 200 is placed on the base surface of the base 71. Further, the connecting member 200 is provided with an insertion hole through which the connecting screw 60 is inserted. The diameter of the insertion hole of the connection member 200 is larger than the outer diameter of the body of the connecting screw 60.

  The height of the pedestal portion 71 (the height from the surface of the conductive layer 22 to the pedestal surface of the pedestal portion 71) is the height of the high-side transistor 110 and the low-side transistor 120 mounted on the conductive layer 22 (the conductive layer 22. Height relative to the surface of the)). With such a configuration, the connection member 200 placed on the pedestal surface of the pedestal portion 71 and the high-side transistor 110 and the low-side transistor 120 mounted on the conductive layer 22 can be prevented from coming into contact with each other.

  The insulating member 72 is formed in a plate shape and is mounted on the connection member 200 mounted on the pedestal portion 71. For example, the insulating member 72 is made of insulating paper (high-quality paper or kraft paper coated with insulating varnish). In this example, the insulating member 72 is formed in a shape (that is, a rectangular plate shape) corresponding to the planar shape of the pedestal surface of the pedestal portion 71. Further, an insertion hole through which the connecting screw 60 is inserted is provided in the central portion of the insulating member 72. The diameter of the insertion hole of the insulating member 72 is larger than the outer diameter of the body of the connecting screw 60, but smaller than the diameter of the insertion hole of the connection member 200 and the diameter of the insertion hole of the pedestal 71. . An annular convex portion 72a is provided on the peripheral portion of the insertion hole of the insulating member 72. The annular convex portion 72a is formed, for example, by embossing the peripheral portion of the insertion hole of the insulating member 72.

  The washer 73 is formed in a plate shape and is placed on the insulating member 72 placed on the connecting member 200. In this example, the washer 73 is formed in a U-shaped plate shape (a plate shape bent in a U shape). The washer 73 is configured to cover the pedestal portion 71 with the connecting member 200 and the insulating member 72 sandwiched between the washer 73 and the pedestal surface of the pedestal portion 71. Further, an insertion hole through which the connecting screw 60 is inserted is provided in the central portion of the washer 73. The diameter of the insertion hole of the washer 73 is larger than the outer diameter of the body of the connecting screw 60.

  Further, the conductive layer 22 and the insulating layer 21 of the substrate 20 are provided with insertion holes through which the connecting screws 60 are inserted. The diameter of the insertion hole of the conductive layer 22 and the insulating layer 21 is larger than the outer diameter of the body portion of the connecting screw 60 and larger than the diameter of the insertion hole of the insulating member 72. Further, the heat dissipation layer 23 of the substrate 20 is provided with a screw hole 61 that is fastened to the connecting screw 60.

  The connecting screw 60 passes through the washer 73, the insulating member 72, the connecting member 200, the pedestal 71, the conductive layer 22, and the insulating layer 21, and is fastened to the heat dissipation layer 23. Specifically, the connecting screw 60 includes the insertion hole of the washer 73, the insertion hole of the insulating member 72, the insertion hole of the connection member 200, the insertion hole of the base 71, the insertion hole of the conductive layer 22, and the insertion hole of the insulating layer 21. And is fastened to the screw hole 61 of the heat dissipation layer 23. A gap is formed between the connecting member 200, the pedestal portion 71, the insertion hole of the conductive layer 22 and the insulating layer 21, and the body portion of the connecting screw 60, and between the head of the connecting screw 60 and the connecting member 200. A washer 73 and an insulating member 72 are provided on the. With such a configuration, insulation between the connection member 200 and the heat dissipation layer 23 can be ensured.

  As described above, the connecting member 200 is connected to the conductive layer 22 by using the connecting screw 60 that penetrates the conductive layer 22 and the insulating layer 21 and is fastened to the heat dissipation layer 23 (in the example of FIG. 7, the third power source is used). By screwing in the region 403), the adhesion between the insulating layer 21 and the heat dissipation layer 23 can be improved. Thereby, heat transfer from the high-side transistor 110 and the low-side transistor 120 to the heat dissipation layer 23 via the conductive layer 22 and the insulating layer 21 can be promoted. As described above, since the heat dissipation of the substrate 20 can be improved, the temperature rise due to the switching operation of the high-side transistor 110 and the low-side transistor 120 can be suppressed.

(Modification 4 of connection structure of connection member)
FIG. 9 illustrates Modification Example 4 of the connection structure of the connection member 200. In FIG. 9, the connection structure between the first power supply connection member 41 and the third power supply region 403 is taken as an example.

  As shown in FIG. 9, the switching power supply device 10 may be configured such that the connecting screw 60 penetrates the conductive layer 22, the insulating layer 21, and the heat dissipation layer 23 and is fastened to the heat dissipation member 24. That is, the connection member 200 (the first power supply connection member 41 in the example of FIG. 9) is connected to the connection member 200 by the connecting screw 60 that penetrates the conductive layer 22, the insulating layer 21, and the heat dissipation layer 23 and is fastened to the heat dissipation member 24. May be screwed to the connection portion (the third power source region 403 in the example of FIG. 9) between the conductive layer 22 and the conductive layer 22.

  In the example of FIG. 9, the conductive layer 22, the insulating layer 21, and the heat dissipation layer 23 are provided with insertion holes through which the connection screws 60 are inserted, and the heat dissipation member 24 is provided with screw holes 61 that are fastened to the connection screws 60. The screw 60 is inserted through the washer 73, the insulating member 72, the connecting member 200, the pedestal 71, the conductive layer 22, the insulating layer 21, and the heat dissipation layer 23. It is inserted into the hole and fastened to the screw hole 61 of the heat dissipation member 24. A gap is formed between the connecting member 200, the pedestal portion 71, the conductive layer 22, the insulating layer 21, the heat dissipation layer 23, and the body portion of the connecting screw 60, and the head portion of the connecting screw 60 and the connecting member. A washer 73 and an insulating member 72 are provided between the unit 200 and the unit 200. With such a configuration, insulation between the connection member 200 and the heat dissipation member 24 can be ensured.

  As described above, the connection member 200 is connected to the conductive layer 22 by using the connecting screw 60 that penetrates the conductive layer 22, the insulating layer 21, and the heat dissipation layer 23 and is fastened to the heat dissipation member 24 (example of FIG. 9). Then, by screwing to the third power source region 403), the adhesion between the insulating layer 21, the heat dissipation layer 23, and the heat dissipation member 24 can be improved. Thereby, heat transfer from the high-side transistor 110 and the low-side transistor 120 to the heat dissipation member 24 via the conductive layer 22, the insulating layer 21, and the heat dissipation layer 23 can be promoted. As described above, since the heat dissipation of the substrate 20 can be improved, the temperature rise due to the switching operation of the high-side transistor 110 and the low-side transistor 120 can be suppressed.

  Further, the connecting member 200 is connected to the connecting portion between the connecting member 200 and the conductive layer 22 (see FIG. 9) by using the connecting screw 60 that penetrates the conductive layer 22, the insulating layer 21, and the heat radiating layer 23 and is fastened to the heat radiating member 24. In the example, the warp of the substrate 20 can be reduced by screwing the third power source region 403). Further, since the board 20 and the heat dissipation member 24 can be fastened together by the connecting screw 60, the number of parts of the switching power supply device 10 can be reduced.

(Embodiment 2)
FIG. 10 illustrates the structure of the switching power supply device 10 according to the second embodiment. The switching power supply device 10 according to the second embodiment is different from the switching power supply device 10 according to the first embodiment in the configuration of the power supply pattern 40, the ground pattern 50, the connection member 200, and the arrangement of the high-side transistor 110, the low-side transistor 120, and the capacitor 130. .

<Power supply pattern>
In the second embodiment, the power supply pattern 40 has six wiring areas (first to sixth power supply areas 401 to 406) and a power supply communication area 410.

《Power supply area》
In the second embodiment, as in the first embodiment, the plurality of power supply regions 400 are arranged at intervals along the extending direction of the output region 300, and the output region 300 is arranged in the direction orthogonal to the extending direction of the output region 300. And are opposed to each other with a predetermined gap. Specifically, the first to sixth power supply areas 401 to 406 are configured as follows.

  The first to third power supply regions 401 to 403 are arranged between the first output region 301 and the second output region 302, and are spaced along the extending direction (first direction X) of the first output region 301. It is arranged. In this example, the first power source region 401, the second power source region 402, and the third power source region 403 are sequentially arranged from one end side in the extending direction of the first output region 301 to the other end side (from left side to right side in FIG. 10). I'm out. Further, the first to third power supply regions 401 to 403 are opposed to the first output region 301 with a predetermined gap in a direction (second direction Y) orthogonal to the extending direction of the first output region 301.

  The fourth to sixth power supply regions 404 to 406 are arranged between the second output region 302 and the third output region 303, and extend in the extending direction (first direction X) of the second and third output regions 302 and 303. They are arranged at intervals along the line. In this example, the fourth power source region 404, the fifth power source region 405, and the sixth power source region 404 extend from one end side in the extending direction of the second and third output regions 302 and 303 toward the other end side (from the left side to the right side in FIG. 10). The area 406 is arranged in order. The fourth to sixth power supply regions 404 to 406 face the second output region 302 with a predetermined gap in a direction (second direction Y) orthogonal to the extending direction of the second output region 302. The fourth to sixth power source regions 404 to 406 face the third output region 303 with a predetermined gap in a direction (second direction Y) orthogonal to the extending direction of the third output region 303.

《Power supply contact area》
In the second embodiment, the power supply communication region 410 is formed so as to extend in the second direction Y along the lateral direction of the substrate 20, and is arranged at the longitudinal edge portion (the right edge portion in FIG. 2) of the substrate 20. ing. The third and sixth power supply areas 403 and 406 are connected to the power supply communication area 410. In the second embodiment, the first, second, fourth, and fifth power supply regions 401, 402, 404, 405 are connected to each other by connecting members 200 (first and second power supply connecting members 41, 42) described later. It is electrically connected to the region 410.

<Ground pattern>
In the second embodiment, the ground pattern 50 has four wiring regions (first to fourth ground regions 501 to 504) and a ground connection region 510.

《Ground area》
In the second embodiment, as in the first embodiment, the plurality of ground areas 500 are arranged at intervals along the extending direction of the output area 300, and the output area 300 is arranged in a direction orthogonal to the extending direction of the output area 300. And are opposed to each other with a predetermined gap. Specifically, the first to fourth ground areas 501 to 504 are configured as follows.

  The first and second ground regions 501 and 502 are arranged between the first output region 301 and the second output region 302, and are spaced from each other along the extending direction (first direction X) of the first output region 301. It is arranged. In this example, the first ground region 501 and the second ground region 502 are sequentially arranged from one end side in the extending direction of the first output region 301 to the other end side (from left side to right side in FIG. 10). In addition, the first and second ground regions 501 and 502 face the first output region 301 with a predetermined gap in a direction (second direction Y) orthogonal to the extending direction of the first output region 301.

  The third and fourth ground regions 503 and 504 are arranged between the first output region 301 and the second output region 302, and extend in the extending direction (first direction X) of the second and third output regions 302 and 303. They are arranged at intervals along the line. In this example, the third ground region 503 and the fourth ground region 504 are arranged in order from one end side to the other end side (left side to right side in FIG. 10) in the extending direction of the second and third output regions 302 and 303. I'm out. The third and fourth ground regions 503 and 504 face the second output region 302 with a predetermined gap in a direction (second direction Y) orthogonal to the extending direction of the second output region 302. Further, the third and fourth ground regions 503, 504 face the third output region 303 with a predetermined gap in a direction (second direction Y) orthogonal to the extending direction of the third output region 303.

《Ground contact area》
In the second embodiment, the ground contact area 510 is arranged at the edge of the substrate 20 in the longitudinal direction (right edge in FIG. 10). In the second embodiment, the first to fourth ground areas 501 to 504 are electrically connected to the ground communication area 510 by the connection member 200 (ground connection member 51) described later.

<Arrangement of power supply area and ground area>
Further, in the second embodiment, similarly to the first embodiment, in the plurality of power supply regions 400 and the plurality of ground regions 500, the power supply regions 400 and the ground regions 500 are alternately arranged in the direction along the extending direction of the output region 300. Are arranged in. Further, the plurality of power source regions 400 and the plurality of ground regions 500 are arranged so that the adjacent power source regions 400 and the ground regions 500 face each other with a predetermined gap.

  Specifically, between the first output region 301 and the second output region 302, one end side to the other end side in the first direction X along the extending direction of the first output region 301 (from left side to right side in FIG. 10). The first power source region 401, the first ground region 501, the second power source region 402, the second ground region 502, and the third power source region 403 are arranged in order toward the. The first ground region 501 faces the first and second power supply regions 401 and 402 with a predetermined gap therebetween, and the second ground region 502 includes the second and third power supply regions 402 and 403. And are opposed to each other with a predetermined gap.

  In addition, between the second output region 302 and the third output region 303, from one end side to the other end side (from the left side in FIG. 10) in the first direction X along the extending direction of the second and third output regions 302, 303. The fourth power source region 404, the third ground region 503, the fifth power source region 405, the fourth ground region 504, and the sixth power source region 406 are sequentially arranged toward the right side). The third ground region 503 faces the fourth and fifth power supply regions 404 and 405 with a predetermined gap, and the fourth ground region 504 covers the fifth and sixth power supply regions 405 and 406. And are opposed to each other with a predetermined gap.

<High-side switching element and high-side transistor>
In the second embodiment, similar to the first embodiment, the conductive layer 22 of the substrate 20 is provided with the first to third high side switching elements 11u to 11w, and each of the first to third high side switching elements 11u to 11w is provided. It is composed of four high-side transistors 110.

  The four high-side transistors 110 that form the first high-side switching element 11u are arranged at intervals in the first direction X along the extending direction of the first output region 301, and among these four high-side transistors 110, One high-side transistor 110 is surface-mounted on the first power supply region 401 and connected to the first output region 301, and two high-side transistors 110 are surface-mounted on the second power supply region 402 and the first output region 301. The remaining one high-side transistor 110 is surface-mounted on the third power source region 403 and connected to the first output region 301.

  The four high-side transistors 110 forming the second high-side switching element 11v are arranged at intervals in the first direction X along the extending direction of the second output region 302, and among these four high-side transistors 110, One high-side transistor 110 is surface-mounted on the fourth power supply region 404 and connected to the second output region 302, and two high-side transistors 110 are surface-mounted on the fifth power supply region 405 and the second output region 302. The remaining one high-side transistor 110 is surface-mounted on the sixth power source region 406 and connected to the second output region 302.

  The four high-side transistors 110 forming the third high-side switching element 11w are arranged at intervals in the first direction X along the extending direction of the third output region 303, and among these four high-side transistors 110, One high-side transistor 110 is surface-mounted on the fourth power supply region 404 and connected to the third output region 303, and two high-side transistors 110 are surface-mounted on the fifth power supply region 405 and the third output region 303. The remaining one high-side transistor 110 is surface-mounted on the sixth power source region 406 and connected to the third output region 303.

<Low-side switching element and low-side transistor>
In the second embodiment, similarly to the first embodiment, the first to third low-side switching elements 12u to 12w are provided in the conductive layer 22 of the substrate 20, and each of the first to third low-side switching elements 12u to 12w has four. It is composed of the low-side transistor 120.

  The four low-side transistors 120 forming the first low-side switching element 12u are arranged at intervals in the first direction X along the extending direction of the first output region 301, and two low-side transistors of these four low-side transistors 120 are arranged. The transistor 120 is surface-mounted on the first output region 301 and connected to the first ground region 501, and the remaining two low-side transistors 120 are surface-mounted on the first output region 301 and connected to the second ground region 502. ing.

  The four low-side transistors 120 constituting the second low-side switching element 12v are arranged at intervals in the first direction X along the extending direction of the second output region 302, and two low-side transistors of the four low-side transistors 120 are arranged. The transistor 120 is surface-mounted on the second output region 302 and connected to the third ground region 503, and the remaining two low-side transistors 120 are surface-mounted on the second output region 302 and connected to the fourth ground region 504. ing.

  The four low-side transistors 120 forming the third low-side switching element 12w are arranged at intervals in the first direction X along the extending direction of the third output region 303, and two low-side transistors of these four low-side transistors 120 are arranged. The transistor 120 is surface-mounted on the third output region 303 and connected to the third ground region 503, and the remaining two low-side transistors 120 are surface-mounted on the third output region 303 and connected to the fourth ground region 504. ing.

<Arrangement of high-side transistor and low-side transistor>
Further, in the second embodiment, as in the first embodiment, the plurality of high-side transistors 110 forming one high-side switching element 11 and the plurality of low-side transistors 120 forming one low-side switching element 12 are arranged in the output region 300. The high-side transistor 110 and the low-side transistor 120 are arranged in the first direction X so that the high-side transistor 110 and the low-side transistor 120 are adjacent to each other in a one-to-one manner in the first direction X along the extending direction. The direction of the terminal of the low-side transistor 120 (the terminal extending from the body side portion toward the ground region 500) is the direction of the terminal of the high-side transistor 110 (the terminal extending from the body side portion toward the output region 300). It is in the opposite direction to that of.

  Specifically, the four high-side transistors 110 forming the first high-side switching element 11u and the four low-side transistors 120 forming the first low-side switching element 12u are the first along the extending direction of the first output region 301. One high side transistor 110, two low side transistors 120, two high side transistors 110, two low side transistors 120, and one high side in the direction X from one end side to the other end side (from left side to right side in FIG. 10). The side transistors 110 are arranged in the first direction X so as to be arranged in order.

  Further, the four high-side transistors 110 forming the second high-side switching element 11v and the four low-side transistors 120 forming the second low-side switching element 12v are arranged in the first direction X along the extending direction of the second output region 302. One high-side transistor 110, two low-side transistors 120, two high-side transistors 110, two low-side transistors 120, and one high-side transistor 110 from one end side to the other end side (from left side to right side in FIG. 10). Are arranged in the first direction X so that and are arranged in order.

  Further, the four high-side transistors 110 forming the third high-side switching element 11w and the four low-side transistors 120 forming the third low-side switching element 12w are arranged in the first direction X along the extending direction of the third output region 303. One high-side transistor 110, two low-side transistors 120, two high-side transistors 110, two low-side transistors 120, and one high-side transistor 110 from one end side to the other end side (from left side to right side in FIG. 10). Are arranged in the first direction X so that and are arranged in order.

<Smoothing capacitor and capacitor>
Further, in the switching power supply device 10 according to the second embodiment, the smoothing capacitance portion 13 is provided on the conductive layer 22 of the substrate 20 as in the first embodiment. The smoothing capacitance section 13 is composed of a plurality of capacitors 130.

  In the second embodiment, as in the first embodiment, the capacitors 130 correspond to the high-side transistors 110 and the low-side transistors 120, respectively. Each of the plurality of capacitors 130 is arranged to be adjacent to the transistor corresponding to the capacitor 130 among the plurality of high side transistors 110 and the plurality of low side transistors 120. In other words, the plurality of high-side transistors 110, the plurality of low-side transistors 120, and the plurality of capacitors 130 are a set of the high-side transistor 110 and the capacitor 130 corresponding to the high-side transistor 110, the low-side transistor 120, and the pair thereof. The pair of capacitors 130 corresponding to the low-side transistors 120 are arranged adjacent to each other.

  Specifically, in the second embodiment, as in the first embodiment, the 24 capacitors 130 corresponding to the 12 high-side transistors 110 and the 12 low-side transistors 120 provided in the conductive layer 22 of the substrate 20, respectively. Is provided.

  The four capacitors 130 respectively corresponding to the four high-side transistors 110 forming the first high-side switching element 11u are arranged along the arrangement direction of the four high-side transistors 110 (extending direction of the first output region 301). The four high-side transistors 110 are provided in the vicinity of the four high-side transistors 110 at intervals in the one direction X. One of the four capacitors 130 is surface-mounted on the first power supply region 401 and the first ground region 501, and one capacitor 130 is mounted on the second power supply region 402 and the first ground region 501. Is surface-mounted on the second power supply region 402 and the second ground region 502, and the remaining capacitor 130 is mounted on the third power supply region 403 and the second ground region 502. Surface mounted.

  The four capacitors 130 respectively corresponding to the four high-side transistors 110 forming the second high-side switching element 11v are arranged along the arrangement direction of the four high-side transistors 110 (extending direction of the second output region 302). The four high-side transistors 110 are provided in the vicinity of the four high-side transistors 110 at intervals in the one direction X. One of the four capacitors 130 is surface-mounted on the fourth power supply region 404 and the third ground region 503, and one capacitor 130 is mounted on the fifth power supply region 405 and the third ground region 503. Surface mounted on the fifth power supply region 405 and the fourth ground region 504, and the remaining capacitor 130 on the sixth power supply region 406 and the fourth ground region 504. Surface mounted.

  The four capacitors 130 respectively corresponding to the four high-side transistors 110 configuring the third high-side switching element 11w are arranged along the arrangement direction of the four high-side transistors 110 (extending direction of the third output region 303). The four high-side transistors 110 are provided in the vicinity of the four high-side transistors 110 at intervals in the one direction X. One of the four capacitors 130 is surface-mounted on the fourth power supply region 404 and the third ground region 503, and one capacitor 130 is mounted on the fifth power supply region 405 and the third ground region 503. Surface mounted on the fifth power supply region 405 and the fourth ground region 504, and the remaining capacitor 130 on the sixth power supply region 406 and the fourth ground region 504. Surface mounted.

  The four capacitors 130 respectively corresponding to the four low-side transistors 120 constituting the first low-side switching element 12u have the first direction X along the arrangement direction of these four low-side transistors 120 (extending direction of the first output region 301). Are provided at intervals and are provided near the four low-side transistors 120, respectively. One of the four capacitors 130 is surface-mounted on the first power supply region 401 and the first ground region 501, and one capacitor 130 is mounted on the second power supply region 402 and the first ground region 501. Is surface-mounted on the second power supply region 402 and the second ground region 502, and the remaining capacitor 130 is mounted on the third power supply region 403 and the second ground region 502. Surface mounted.

  The four capacitors 130 respectively corresponding to the four low-side transistors 120 configuring the second low-side switching element 12v have the first direction X along the arrangement direction of these four low-side transistors 120 (extending direction of the second output region 302). Are provided at intervals and are provided near the four low-side transistors 120, respectively. One of the four capacitors 130 is surface-mounted on the fourth power supply region 404 and the third ground region 503, and one capacitor 130 is mounted on the fifth power supply region 405 and the third ground region 503. Surface mounted on the fifth power supply region 405 and the fourth ground region 504, and the remaining capacitor 130 on the sixth power supply region 406 and the fourth ground region 504. Surface mounted.

  The four capacitors 130 respectively corresponding to the four low-side transistors 120 configuring the third low-side switching element 12w have the first direction X along the arrangement direction of these four low-side transistors 120 (extending direction of the third output region 303). Are provided at intervals and are provided near the four low-side transistors 120, respectively. One of the four capacitors 130 is surface-mounted on the fourth power supply region 404 and the third ground region 503, and one capacitor 130 is mounted on the fifth power supply region 405 and the third ground region 503. Surface mounted on the fifth power supply region 405 and the fourth ground region 504, and the remaining capacitor 130 on the sixth power supply region 406 and the fourth ground region 504. Surface mounted.

<Connecting member>
In the second embodiment, as in the first embodiment, at least one of the power supply pattern 40 and the ground pattern 50 has a plurality of wiring regions electrically connected by the connecting member 200 (wirings formed in the conductive layer 22. Part of the pattern). In this example, the power supply pattern 40 includes first, second, fourth, and fifth power supply regions 401, 402, 404 electrically connected by the first and second power supply connection members 41, 42 (connection member 200). , 405. The ground pattern 50 has first to fourth ground regions 501 to 504 electrically connected by the ground connection member 51 (connection member 200). In addition, in FIG. 10, the first and second power supply connecting members 41 and 42 and the ground connecting member 51 are illustrated by a two-dot chain line.

  The first power supply connection member 41 electrically connects the power supply communication area 410, the first power supply area 401, and the second power supply area 402. The second power supply connection member 42 electrically connects the power supply communication region 410, the fourth power supply region 404, and the fifth power supply region 405. The ground connection member 51 electrically connects the ground connection region 510, the first ground region 501, the second ground region 502, the third ground region 503, and the fourth ground region 504.

  Further, in the second embodiment, similarly to the first embodiment, the connection member 200 is configured by a plate-shaped conductor (bus bar). Specifically, the connecting member 200 is formed in a plate shape and faces the conductive layer 22 at a distance from the main body portion 201, and one of the plurality of wiring regions of the conductive layer 22 from the main body portion 201. And an extension portion 202 that extends. For example, the ground connection member 51 includes a main body 201 facing the second output region 302 with a space therebetween, and five wiring regions of the main body 201 to the ground pattern 50 (a ground connection region 510, a first ground region 501, and a first ground region 501). The second ground area 502, the third ground area 503, and the five extension portions 202 respectively extending toward the fourth ground area 504).

  Further, in the second embodiment, as in the first embodiment, the connection member 200 is joined to the plurality of wiring regions of the conductive layer 22 by soldering. For example, the five extending portions 202 of the ground connection member 51 may include five wiring regions of the ground pattern 50 (ground connecting region 510, first ground region 501, second ground region 502, third ground region 503, and fourth ground region). The regions 504) are respectively joined by solder.

  In the second embodiment, as in the first embodiment, the material forming the connecting member 200 is the same as the material forming the heat dissipation layer 23. In this example, the portion of the connecting member 200 that is to be joined to the plurality of wiring regions by solder is plated to enable joining by solder. For example, the ground connection member 51 and the heat dissipation layer 23 are made of aluminum, and the five wiring regions of the ground pattern 50 (ground connection region 510, first ground region 501, second ground region 502, and Nickel (a material for enabling joining by solder) is plated on the five extending portions joined to the third ground region 503 and the fourth ground region 504) by solder.

[Effects of Second Embodiment]
In the switching power supply device 10 according to the second embodiment, the same effect as that obtained by the switching power supply device 10 according to the first embodiment can be obtained. For example, heat concentration in the high-side switching element 11 and the low-side switching element 12 can be reduced.

(Embodiment 3)
FIG. 11 illustrates the configuration of the switching power supply device 10 according to the third embodiment. The switching power supply device 10 according to the third embodiment has the configuration of the output pattern 30, the power supply pattern 40, the ground pattern 50, the connection member 200, and the arrangement of the high-side transistor 110, the low-side transistor 120, and the capacitor 130 according to the first embodiment. Is different from

<Output pattern>
In the third embodiment, the output pattern 30 has first to third output areas 301 to 303 corresponding to the first to third switching units SWu to SWw, respectively. The first to third output regions 301 to 303 are formed so as to extend along the first direction X, and are arranged at intervals in the first direction X. In this example, the first to third output areas 301 to 303 are arranged at the center of the substrate 20 in the lateral direction.

  The first to third output connecting members 81 to 83 are electrically connected to the first to third output areas 301 to 303. The first to third output connecting members 81 to 83 are configured by, for example, plate-shaped conductors (bus bars). Note that, in FIG. 11, the first to third output connecting members 81 to 83 are shown by a chain double-dashed line.

<Power supply pattern>
Further, in the third embodiment, the power supply pattern 40 has a first power supply area 401, a second power supply area 402, and a power supply connection area 430.

《Power supply area》
The first power source region 401 and the second power source region 402 are respectively extended along the extending direction (first direction X) of the first to third output regions 301 to 303. The first power supply region 401 faces the first to third output regions 301 to 303 at a predetermined interval in a direction (second direction Y) orthogonal to the extending direction of the first to third output regions 301 to 303. ing. The second power source region 402 includes first to third output regions 301 to 303 and a second ground region 502 described later in a direction (second direction Y) orthogonal to the extending direction of the first to third output regions 301 to 303. It is arranged so as to face the first power supply region 401 with being sandwiched therebetween. The second power supply region 402 is electrically connected to one end (positive electrode) of the DC power supply P.

《Power connection area》
The power supply connection region 430 is formed so as to extend in the second direction Y, and connects the first power supply region 401 and the second power supply region 402. In this example, the power supply connection region 430 is arranged at the edge (the right edge in FIG. 11) in the longitudinal direction of the substrate 20.

<Ground pattern>
In addition, in the third embodiment, the ground pattern 50 has a first ground region 501, a second ground region 502, a first ground extension region 531 and a second ground extension region 532.

《Ground area》
The first ground region 501 and the second ground region 502 are respectively extended along the extending direction (first direction X) of the first to third output regions 301 to 303. The second ground region 502 faces the first to third output regions 301 to 303 at a predetermined interval in a direction (second direction Y) orthogonal to the extending direction of the first to third output regions 301 to 303. ing. The first ground region 501 is located between the first power supply region 401 and the first to third output regions 301 to 303 in a direction (second direction Y) orthogonal to the extending direction of the first to third output regions 301 to 303. It is arranged so as to face the second ground region 502 with sandwiching it. In addition, the first ground region 501 is electrically connected to the other end (negative electrode) of the DC power supply P.

《Ground extension area》
The first ground extension region 531 and the second ground extension region 532 are formed to extend in a direction (second direction Y) orthogonal to the extension direction of the first to third output regions 301 to 303. The first ground extension region 531 is arranged between the first output region 301 and the second output region 302, and the second ground extension region 532 is located between the second output region 302 and the third output region 303. It is located in. The first ground extension region 531 and the second ground extension region 532 are connected to the second ground region 502 and face the first power supply region 401 with a predetermined space.

<Arrangement of power supply area and ground area>
In the third embodiment, the plurality of power supply regions 400 and the plurality of ground regions 500 are arranged so that the power supply regions 400 and the ground regions 500 face each other with a predetermined space therebetween in a direction orthogonal to the extending direction of the output region 300. ing.

  Specifically, the first ground region 501, the first power source region 401, and the first to third outputs from the one end side in the lateral direction of the substrate 20 toward the other end side (from the lower side to the upper side in the example of FIG. 11). The regions 301 to 303, the second ground region 502, and the second power source region 402 are arranged in order. The first power source region 401 faces the first ground region 501 with a predetermined gap, and the second power source region 402 faces the second ground region 502 with a predetermined gap.

<High-side switching element and high-side transistor>
Further, in the third embodiment, similarly to the first embodiment, the conductive layer 22 of the substrate 20 is provided with the first to third high side switching elements 11u to 11w, and the first to third high side switching elements 11u to 11w are provided. Each is composed of four high-side transistors 110.

  The four high-side transistors 110 forming the first high-side switching element 11u are arranged at intervals in the first direction X along the extending direction of the first output region 301, and are surface-mounted on the first power supply region 401. It is connected to the first output area 301. The four high-side transistors 110 that configure the second high-side switching element 11v are arranged at intervals in the first direction X along the extending direction of the second output region 302, and are surface-mounted on the first power supply region 401. It is connected to the second output area 302. The four high-side transistors 110 forming the third high-side switching element 11w are arranged at intervals in the first direction X along the extending direction of the third output region 303, and are surface-mounted on the first power supply region 401. It is connected to the third output area 303.

<Low-side switching element and low-side transistor>
Further, in the third embodiment, similar to the first embodiment, the first to third low side switching elements 12u to 12w are provided in the conductive layer 22 of the substrate 20, and each of the first to third low side switching elements 12u to 12w is provided. It is composed of four low-side transistors 120.

  The four low-side transistors 120 that form the first low-side switching element 12u are arranged at intervals in the first direction X along the extending direction of the first output region 301, and are surface-mounted on the first output region 301 to be the second It is connected to the ground region 502. The four low-side transistors 120 constituting the second low-side switching element 12v are arranged at intervals in the first direction X along the extending direction of the second output region 302, and are surface-mounted on the second output region 302 to be the second. It is connected to the ground region 502. The four low-side transistors 120 that form the third low-side switching element 12w are arranged at intervals in the first direction X along the extending direction of the third output region 303, and are surface-mounted on the third output region 303 to be the second. It is connected to the ground region 502.

<Arrangement of high-side transistor and low-side transistor>
In the third embodiment, the plurality of high-side transistors 110 included in one high-side switching element 11 and the plurality of low-side transistors 120 included in one low-side switching element 12 are arranged in a direction orthogonal to the extending direction of the output region 300 (first In the two directions Y), the high-side transistors 110 and the low-side transistors 120 are arranged in the direction (first direction X) along the extending direction of the output region 300 so as to be adjacent to each other one-on-one.

  Specifically, the four high-side transistors 110 that form the first high-side switching element 11u form the first low-side switching element 12u in the second direction Y that is orthogonal to the extending direction of the first output region 301. The two low-side transistors 120 are integrally opposed to each other. Similarly, the four high-side transistors 110 forming the second high-side switching element 11v form the second low-side switching element 12v in the second direction Y orthogonal to the extending direction of the second output region 302. The four high-side transistors 110 that are integrally opposed to the two low-side transistors 120 and configure the third high-side switching element 11w include the third low-side switching in the second direction Y orthogonal to the extending direction of the third output region 303. The four low-side transistors 120 that form the element 12w are integrally opposed to each other.

<Smoothing capacitor and capacitor>
Further, in the switching power supply device 10 according to the third embodiment, the smoothing capacitance section 13 is provided in the conductive layer 22 of the substrate 20 as in the first embodiment. The smoothing capacitance section 13 is composed of a plurality of capacitors 130.

  In the third embodiment, as in the first embodiment, the capacitors 130 correspond to the high-side transistors 110 and the low-side transistors 120, respectively. Each of the plurality of capacitors 130 is arranged to be adjacent to the transistor corresponding to the capacitor 130 among the plurality of high side transistors 110 and the plurality of low side transistors 120. In other words, the plurality of high-side transistors 110, the plurality of low-side transistors 120, and the plurality of capacitors 130 are a set of the high-side transistor 110 and the capacitor 130 corresponding to the high-side transistor 110, the low-side transistor 120, and the pair thereof. The pair of capacitors 130 corresponding to the low-side transistors 120 are arranged adjacent to each other.

  In this example, the plurality of capacitors 130 respectively corresponding to the plurality of high-side transistors 110 are arranged at intervals in the first direction X along the arrangement direction of the plurality of high-side transistors 110 (the extending direction of the output region 300). , Adjacent to the plurality of high-side transistors 110 in a direction (second direction Y) orthogonal to the arrangement direction of the plurality of high-side transistors 110. The plurality of capacitors 130 respectively corresponding to the plurality of low-side transistors 120 are arranged at intervals in the first direction X along the arrangement direction of the plurality of low-side transistors 120 (the extending direction of the output region 300), and the plurality of low-side transistors 120. Are adjacent to the plurality of low-side transistors 120 in a direction (second direction Y) orthogonal to the arrangement direction of the. In this example, the capacitor 130, the high-side transistor 110, and the low-side transistor 120 corresponding to the high-side transistor 110 are arranged from one end side to the other end side (from the lower side to the upper side in FIG. 11) of the substrate 20 in the lateral direction. The capacitors 130 corresponding to the low-side transistors 120 are arranged in order.

  Specifically, the four capacitors 130 respectively corresponding to the four high-side transistors 110 forming the first high-side switching element 11u are arranged in the arrangement direction of the four high-side transistors 110 (extension of the first output region 301). Direction) and are arranged at intervals in the first direction X, and are provided in the vicinity of these four high-side transistors 110, respectively. The four capacitors 130 respectively corresponding to the four high-side transistors 110 are surface-mounted on the first power supply region 401 and the first ground region 501. Note that four capacitors 130 corresponding to the four high-side transistors 110 configuring the second high-side switching element 11v and four capacitors corresponding to the four high-side transistors 110 configuring the third high-side switching element 11w, respectively. The configuration of 130 is the same as the configuration of the four capacitors 130 respectively corresponding to the four high-side transistors 110 that form the first high-side switching element 11u.

  In addition, the four capacitors 130 respectively corresponding to the four low-side transistors 120 that form the first low-side switching element 12u are the first capacitors along the arrangement direction of these four low-side transistors 120 (the extending direction of the first output region 301). They are arranged at intervals in the direction X, and are provided near these four low-side transistors 120, respectively. The four capacitors 130 respectively corresponding to these four low-side transistors 120 are surface-mounted on the second power supply region 402 and the second ground region 502. The configurations of the four capacitors 130 respectively corresponding to the four low-side transistors 120 configuring the second low-side switching element 12v and the four capacitors 130 respectively corresponding to the four low-side transistors 120 configuring the third low-side switching element 12w are , And the four low-side transistors 120 forming the first low-side switching element 12u have the same configuration as the four capacitors 130 respectively.

<Connecting member>
In the third embodiment, as in the first embodiment, at least one of the power supply pattern 40 and the ground pattern 50 has a plurality of wiring regions electrically connected by the connecting member 200 (wirings formed in the conductive layer 22). Part of the pattern). In this example, the ground pattern 50 includes a first ground region 501 and first and second ground extension regions 531 and 532 electrically connected by the first and second ground connection members 55 and 56 (connection member 200). have. In addition, in FIG. 11, the first and second ground connection members 55 and 56 are shown by a chain double-dashed line.

  The first ground connection member 55 electrically connects the first ground region 501 and the first ground extension region 531. The second ground connection member 56 electrically connects the first ground region 501 and the second ground extension region 532.

  Further, in the third embodiment, similarly to the first embodiment, the connection member 200 is configured by a plate-shaped conductor (bus bar). Specifically, the connecting member 200 is formed in a plate shape and faces the conductive layer 22 at a distance from the main body portion 201, and one of the plurality of wiring regions of the conductive layer 22 from the main body portion 201. And an extension portion 202 that extends. For example, the first ground connection member 55 includes a main body 201 that faces the first power source region 401 with a gap, and two wiring regions (a first ground region 501 and a first ground extension region) of the ground pattern 50 from the main body 201. It has two extending portions 202 respectively extending toward the projecting area 531).

  Further, in the third embodiment, as in the first embodiment, the connecting member 200 is joined to the plurality of wiring regions of the conductive layer 22 by soldering. For example, the two extension parts 202 of the first ground connection member 55 are respectively joined to the two wiring regions (the first ground region 501 and the first ground extension region 531) of the ground pattern 50 by soldering.

  In the third embodiment, as in the first embodiment, the material forming the connecting member 200 is the same as the material forming the heat dissipation layer 23. In this example, the portion of the connecting member 200 that is to be joined to the plurality of wiring regions by solder is plated to enable joining by solder. For example, the first ground connection member 55 and the heat dissipation layer 23 are made of aluminum, and two wiring regions (first ground region 501 and first ground extension region 531) of the ground pattern 50 in the first ground connection member 55. Nickel (a material for enabling soldering) is plated on the two extending portions to be joined by soldering.

[Effects of Third Embodiment]
In the switching power supply device 10 according to the third embodiment, the same effect as that obtained by the switching power supply device 10 according to the first embodiment can be obtained. For example, heat concentration in the high-side switching element 11 and the low-side switching element 12 can be reduced.

(Modification 1 of Embodiment 3)
FIG. 12 illustrates the configuration of the switching power supply device 10 according to the first modification of the third embodiment. The switching power supply device 10 according to the first modification of the third embodiment has the configuration of the output pattern 30, the power supply pattern 40, the ground pattern 50, the connecting member 200, and the arrangement of the high-side transistor 110, the low-side transistor 120, and the capacitor 130 according to the third embodiment. It is different from the switching power supply device 10.

<Output pattern>
In the first modification of the third embodiment, the output pattern 30 includes first to third output regions 301 to 303 corresponding to the first to third switching units SWu to SWw and first to third switching units SWu to SWw. And fourth to sixth output areas 304 to 306 respectively corresponding to. The first to third output regions 301 to 303 are formed so as to extend along the first direction X, and are arranged at intervals in the first direction X. Similarly, the fourth to sixth output regions 304 to 306 are formed so as to extend along the first direction X, and are arranged at intervals in the first direction X. In addition, the fourth to sixth output regions 304 to 306 are arranged so as to face the first to third output regions 301 to 303 in the second direction Y orthogonal to the first direction X at intervals. .

  Further, the first output connecting member 81 is electrically connected to the first output area 301 and the fourth output area 304, and the second output connecting member 82 is connected to the second output area 302 and the fifth output area 305. The third output connection member 83 is electrically connected to the third output region 303 and the sixth output region 306. Note that, in FIG. 12, the first to third output connecting members 81 to 83 are indicated by alternate long and two short dashes lines.

<Power supply pattern>
In the first modification of the third embodiment, the power supply pattern 40 includes the first power supply area 401, the second power supply area 402, the power supply connection area 410, the first power supply connection area 431, and the second power supply connection area 432. And a third power supply connection region 433.

《Power supply area》
The first power source region 401 and the second power source region 402 are respectively extended along the extending direction (first direction X) of the first to third output regions 301 to 303. The first power supply region 401 faces the first to third output regions 301 to 303 at a predetermined interval in a direction (second direction Y) orthogonal to the extending direction of the first to third output regions 301 to 303. ing. The second power supply region 402 faces the first power supply region 401 with a first grounding region 501, which will be described later, interposed therebetween in a direction (second direction Y) orthogonal to the extending direction of the first to third output regions 301 to 303. It is arranged to.

《Power supply contact area》
The power supply connection region 410 is formed to extend in the extending direction (first direction X) of the first to third output regions 301 to 303, and is a direction orthogonal to the extending direction of the first to third output regions 301 to 303. It is arranged so as to face the first power supply region 401 with the first to third output regions 301 to 303 interposed therebetween in the (second direction Y). In this example, the power supply communication region 410 is arranged at the edge portion (lower edge portion in FIG. 12) in the lateral direction of the substrate 20. Further, the power supply communication region 410 is electrically connected to one end (positive electrode) of the DC power supply P.

《Power connection area》
The first power supply connection region 431 and the second power supply connection region 432 are formed to extend in a direction (second direction Y) orthogonal to the extension direction of the first to third output regions 301 to 303. The first power supply connection area 431 is arranged between the first output area 301 and the second output area 302, and the second power supply connection area 432 is arranged between the second output area 302 and the third output area 303. Has been done. The first power supply connection area 431 and the second power supply connection area 432 connect the first power supply area 401 and the power supply communication area 410.

  The third power supply connection region 433 is formed so as to extend in the second direction Y, and connects the first power supply region 401 and the second power supply region 402. In this example, the third power supply connection region 433 is arranged at the longitudinal edge (the right edge in FIG. 12) of the substrate 20.

<Ground pattern>
Further, in the modified example 1 of the third embodiment, the ground pattern 50 includes the first ground region 501, the second ground region 502, the ground connection region 510, the first ground connection region 511, and the second ground connection region 512. And have.

《Ground area》
The 1st grounding area | region 501 and the 2nd grounding area 502 are extended so that it may extend along the extending | stretching direction (1st direction X) of the 4th-6th output areas 304-306, respectively. The second ground area 502 faces the fourth to sixth output areas 304 to 306 at a predetermined interval in a direction (second direction Y) orthogonal to the extending direction of the fourth to sixth output areas 304 to 306. ing. The first ground region 501 is opposed to the second ground region 502 with the second power supply region 402 sandwiched in the direction (second direction Y) orthogonal to the extending direction of the fourth to sixth output regions 304 to 306. It is located in.

《Ground contact area》
The ground contact region 510 is formed to extend in the extending direction (first direction X) of the fourth to sixth output regions 304 to 306, and is orthogonal to the extending direction of the fourth to sixth output regions 304 to 306. It is arranged so as to face the second ground region 502 with the fourth to sixth output regions 304 to 306 interposed therebetween in the (second direction Y). In this example, the ground connection region 510 is arranged at the edge portion (upper edge portion in FIG. 12) in the lateral direction of the substrate 20. In addition, the ground communication region 510 is electrically connected to the other end (negative electrode) of the DC power supply P.

《Ground connection area》
The first ground connection region 511 and the second ground connection region 512 are formed to extend in a direction (second direction Y) orthogonal to the extending direction of the fourth to sixth output regions 304 to 306. The first ground connection region 511 is arranged between the fourth output region 304 and the fifth output region 305, and the second ground connection region 512 is arranged between the fifth output region 305 and the sixth output region 306. Has been done. Then, the first ground connection region 511 and the second ground connection region 512 connect the second ground region 502 and the ground connection region 510.

<Arrangement of power supply area and ground area>
In the modified example 1 of the third embodiment, similar to the third embodiment, the plurality of power supply regions 400 and the plurality of ground regions 500 have a predetermined power supply region 400 and ground region 500 in the direction orthogonal to the extending direction of the output region 300. Are arranged so as to face each other with a space therebetween.

  Specifically, from the one end side in the lateral direction of the substrate 20 to the other end side (from the lower side to the upper side in the example of FIG. 12), the power supply communication region 410, the first to third output regions 301 to 303, and the first side. The power supply region 401, the first ground region 501, the second power supply region 402, the second ground region 502, the fourth to sixth output regions 304 to 306, and the ground connection region 510 are arranged in order. The first power source region 401 faces the first ground region 501 with a predetermined gap, and the second power source region 402 faces the second ground region 502 with a predetermined gap.

<High-side switching element and high-side transistor>
Further, in the first modification of the third embodiment, similar to the third embodiment, the conductive layer 22 of the substrate 20 is provided with the first to third high side switching elements 11u to 11w, and the first to third high side switching elements are provided. Each of 11 u to 11 w is composed of four high side transistors 110.

  Then, in the first modification of the third embodiment, as in the third embodiment, the four high-side transistors 110 included in the first high-side switching element 11u are arranged in the first direction X along the extending direction of the first output region 301. Are spaced from each other, are surface-mounted on the first power supply region 401, and are connected to the first output region 301. The four high-side transistors 110 that configure the second high-side switching element 11v are arranged at intervals in the first direction X along the extending direction of the second output region 302, and are surface-mounted on the first power supply region 401. It is connected to the second output area 302. The four high-side transistors 110 that form the third high-side switching element 11w are arranged at intervals in the first direction X along the extending direction of the third output region 303 and are surface-mounted on the first power supply region 401. It is connected to the third output area 303.

<Low-side switching element and low-side transistor>
Further, in the first modification of the third embodiment, similarly to the third embodiment, the first to third low-side switching elements 12u to 12w are provided in the conductive layer 22 of the substrate 20, and the first to third low-side switching elements 12u to. Each of 12 w is composed of four low-side transistors 120.

  In the first modification of the third embodiment, the four low-side transistors 120 that form the first low-side switching element 12u are arranged at intervals in the first direction X along the extending direction of the fourth output region 304, and The four-output region 304 is surface-mounted and connected to the second ground region 502. The four low-side transistors 120 that form the second low-side switching element 12v are arranged at intervals in the first direction X along the extending direction of the fifth output region 305, and are surface-mounted on the fifth output region 305 to be the second. It is connected to the ground region 502. The four low-side transistors 120 configuring the third low-side switching element 12w are arranged at intervals in the first direction X along the extending direction of the sixth output region 306, and are surface-mounted on the sixth output region 306 to be the second. It is connected to the ground region 502.

<Arrangement of high-side transistor and low-side transistor>
In the first modification of the third embodiment, the plurality of high-side transistors 110 configuring one high-side switching element 11 and the plurality of low-side transistors 120 configuring one low-side switching element 12 are orthogonal to the extending direction of the output region 300. In a direction (second direction Y) such that the high-side transistor 110 and the low-side transistor 120 are adjacent to each other in a one-to-one manner with a capacitor 130 described later interposed therebetween (first direction X). ) Is located.

<Smoothing capacitor and capacitor>
Further, in the switching power supply device 10 according to the modified example 1 of the third embodiment, the smoothing capacitance portion 13 is provided in the conductive layer 22 of the substrate 20 as in the third embodiment. The smoothing capacitance section 13 is composed of a plurality of capacitors 130.

  In the first modification of the third embodiment, as in the third embodiment, the capacitors 130 correspond to the high-side transistors 110 and the low-side transistors 120, respectively. Each of the plurality of capacitors 130 is arranged to be adjacent to the transistor corresponding to the capacitor 130 among the plurality of high side transistors 110 and the plurality of low side transistors 120. In other words, the plurality of high-side transistors 110, the plurality of low-side transistors 120, and the plurality of capacitors 130 are a set of the high-side transistor 110 and the capacitor 130 corresponding to the high-side transistor 110, the low-side transistor 120, and the pair thereof. The pair of capacitors 130 corresponding to the low-side transistors 120 are arranged adjacent to each other.

  In this example, the plurality of capacitors 130 respectively corresponding to the plurality of high-side transistors 110 configuring one high-side switching element 11 are orthogonal to the arrangement direction of the plurality of high-side transistors 110 (the extending direction of the output region 300). In the direction (second direction Y), it is adjacent to the plurality of capacitors 130 corresponding to the plurality of low-side transistors 120 configuring one low-side switching element 12 in a one-to-one manner. That is, in this example, the high-side transistor 110 and the capacitor 130 and the low-side transistor 120 corresponding to the high-side transistor 110 are arranged from the one end side in the lateral direction of the substrate 20 to the other end side (from the lower side to the upper side in FIG. 12). The corresponding capacitor 130 and the low-side transistor 120 are arranged in order.

<Connecting member>
In the first modification of the third embodiment, the ground pattern 50 is the first and second grounds that are electrically connected by the first and second ground connection members 55 and 56 (connection member 200), as in the third embodiment. It has areas 501 and 502. Note that, in FIG. 12, the first and second ground connection members 55 and 56 are shown by a chain double-dashed line. The first and second ground connection members 55 and 56 electrically connect the first ground region 501 and the second ground region 502.

[Effects of Modification 1 of Embodiment 3]
In the switching power supply device 10 according to the first modification of the third embodiment, it is possible to obtain the same effects as the effects obtained by the switching power supply device 10 according to the third embodiment. For example, heat concentration in the high-side switching element 11 and the low-side switching element 12 can be reduced.

(Modification 2 of Embodiment 3)
FIG. 13 illustrates the configuration of the switching power supply device 10 according to the second modification of the third embodiment. The switching power supply device 10 according to the second modification of the third embodiment has the configuration of the output pattern 30, the power supply pattern 40, the ground pattern 50, the connecting member 200, and the arrangement of the high-side transistor 110, the low-side transistor 120, and the capacitor 130 according to the third embodiment. It is different from the switching power supply device 10.

<Output pattern>
In the second modification of the third embodiment, the output pattern 30 includes first to third output regions 301 to 303 corresponding to the first to third switching units SWu to SWw and first to third switching units SWu to SWw. And fourth to sixth output areas 304 to 306 respectively corresponding to. The first to third output regions 301 to 303 are formed so as to extend along the first direction X, and are arranged at intervals in the first direction X. Similarly, the fourth to sixth output regions 304 to 306 are formed so as to extend along the first direction X, and are arranged at intervals in the first direction X. In addition, the fourth to sixth output regions 304 to 306 are arranged so as to face the first to third output regions 301 to 303 in the second direction Y orthogonal to the first direction X at intervals. .

  Further, the first output connecting member 81 is electrically connected to the first output area 301 and the fourth output area 304, and the second output connecting member 82 is connected to the second output area 302 and the fifth output area 305. The third output connection member 83 is electrically connected to the third output region 303 and the sixth output region 306. Note that, in FIG. 13, the first to third output connecting members 81 to 83 are indicated by alternate long and two short dashes lines.

<Power supply pattern>
Further, in the second modification of the third embodiment, the power supply pattern 40 has a first power supply area 401, a second power supply area 402, and a power supply connection area 430.

《Power supply area》
The first power source region 401 and the second power source region 402 are respectively extended along the extending direction (first direction X) of the first to third output regions 301 to 303. The first power supply region 401 faces the first to third output regions 301 to 303 at a predetermined interval in a direction (second direction Y) orthogonal to the extending direction of the first to third output regions 301 to 303. ing. The second power supply region 402 is a first power supply region with the first to third output regions 301 to 303 sandwiched in the direction (second direction Y) orthogonal to the extending direction of the first to third output regions 301 to 303. It is arranged so as to face 401. The first power supply region 401 is electrically connected to one end (positive electrode) of the DC power supply P.

《Power connection area》
The power supply connection region 430 is formed so as to extend in the second direction Y, and connects the first power supply region 401 and the second power supply region 402. In this example, the power supply connection region 430 is arranged at the edge portion (the right edge portion in FIG. 13) in the longitudinal direction of the substrate 20.

<Ground pattern>
In addition, in the second modification of the third embodiment, the ground pattern 50 has a first ground region 501 and a second ground region 502.

《Ground area》
The 1st grounding area | region 501 and the 2nd grounding area 502 are extended so that it may extend along the extending | stretching direction (1st direction X) of the 4th-6th output areas 304-306, respectively. The second ground area 502 faces the fourth to sixth output areas 304 to 306 at a predetermined interval in a direction (second direction Y) orthogonal to the extending direction of the fourth to sixth output areas 304 to 306. ing. The first ground area 501 includes the first power source area 401, the first to third output areas 301 to 303, and the second power area 401 in the direction (second direction Y) orthogonal to the extending direction of the fourth to sixth output areas 304 to 306. It is arranged so as to face the second ground region 502 with the power source region 402 interposed therebetween.

<Arrangement of power supply area and ground area>
In the second modification of the third embodiment, similar to the third embodiment, the plurality of power supply regions 400 and the plurality of ground regions 500 have a predetermined power supply region 400 and ground region 500 in a direction orthogonal to the extending direction of the output region 300. Are arranged so as to face each other with a space therebetween.

  Specifically, the first ground region 501, the first power source region 401, and the first to third outputs from the one end side in the lateral direction of the substrate 20 toward the other end side (from the lower side to the upper side in the example of FIG. 13). The areas 301 to 303, the second power supply area 402, the second ground area 502, and the fourth to sixth output areas 304 to 306 are arranged in order. The first power source region 401 faces the first ground region 501 with a predetermined space, and the second power source region 402 faces the second ground region 502 with a predetermined space.

<High-side switching element and high-side transistor>
Further, in the second modification of the third embodiment, similarly to the third embodiment, the first to third high side switching elements 11u to 11w are provided in the conductive layer 22 of the substrate 20, and the first to third high side switching elements are provided. Each of 11 u to 11 w is composed of four high side transistors 110.

  Then, in the modified example 2 of the third embodiment, as in the third embodiment, the four high-side transistors 110 included in the first high-side switching element 11u are arranged in the first direction X along the extending direction of the first output region 301. Are spaced from each other, are surface-mounted on the first power supply region 401, and are connected to the first output region 301. The four high-side transistors 110 that configure the second high-side switching element 11v are arranged at intervals in the first direction X along the extending direction of the second output region 302, and are surface-mounted on the first power supply region 401. It is connected to the second output area 302. The four high-side transistors 110 that form the third high-side switching element 11w are arranged at intervals in the first direction X along the extending direction of the third output region 303 and are surface-mounted on the first power supply region 401. It is connected to the third output area 303.

<Low-side switching element and low-side transistor>
Further, in the second modification of the third embodiment, similarly to the third embodiment, the conductive layers 22 of the substrate 20 are provided with the first to third low-side switching elements 12u to 12w, and the first to third low-side switching elements 12u to. Each of 12 w is composed of four low-side transistors 120.

  In the second modification of the third embodiment, the four low-side transistors 120 forming the first low-side switching element 12u are arranged at intervals in the first direction X along the extending direction of the fourth output region 304, and The four-output region 304 is surface-mounted and connected to the second ground region 502. The four low-side transistors 120 that form the second low-side switching element 12v are arranged at intervals in the first direction X along the extending direction of the fifth output region 305, and are surface-mounted on the fifth output region 305 to be the second. It is connected to the ground region 502. The four low-side transistors 120 configuring the third low-side switching element 12w are arranged at intervals in the first direction X along the extending direction of the sixth output region 306, and are surface-mounted on the sixth output region 306 to be the second. It is connected to the ground region 502.

<Arrangement of high-side transistor and low-side transistor>
In the second modification of the third embodiment, the plurality of high-side transistors 110 forming one high-side switching element 11 and the plurality of low-side transistors 120 forming one low-side switching element 12 are orthogonal to the extending direction of the output region 300. In a direction (second direction Y) such that the high-side transistor 110 and the low-side transistor 120 are adjacent to each other in a one-to-one manner with a capacitor 130 described later interposed therebetween (first direction X). ) Is located.

<Smoothing capacitor and capacitor>
Further, in the switching power supply device 10 according to the second modification of the third embodiment, the smoothing capacitance section 13 is provided on the conductive layer 22 of the substrate 20 as in the third embodiment. The smoothing capacitance section 13 is composed of a plurality of capacitors 130.

  In the second modification of the third embodiment, as in the third embodiment, the capacitors 130 correspond to the high-side transistors 110 and the low-side transistors 120, respectively. Each of the plurality of capacitors 130 is arranged to be adjacent to the transistor corresponding to the capacitor 130 among the plurality of high side transistors 110 and the plurality of low side transistors 120. In other words, the plurality of high-side transistors 110, the plurality of low-side transistors 120, and the plurality of capacitors 130 are a set of the high-side transistor 110 and the capacitor 130 corresponding to the high-side transistor 110, the low-side transistor 120, and the pair thereof. The pair of capacitors 130 corresponding to the low-side transistors 120 are arranged adjacent to each other.

  In this example, the plurality of capacitors 130 respectively corresponding to the plurality of high-side transistors 110 configuring one high-side switching element 11 are orthogonal to the arrangement direction of the plurality of high-side transistors 110 (the extending direction of the output region 300). In the direction (second direction Y), the low side switching devices 12 are adjacent to each other in a one-to-one correspondence with the plurality of low side transistors 120. That is, in this example, the capacitors 130, the high-side transistors 110, and the low-side transistors 120 corresponding to the high-side transistors 110 are formed from one end side to the other end side (from the lower side to the upper side in FIG. 13) of the substrate 20 in the lateral direction. The corresponding capacitor 130 and the low-side transistor 120 are arranged in order.

<Connecting member>
In the modified example 2 of the third embodiment, as in the third embodiment, the ground pattern 50 has the first and second grounds electrically connected by the first and second ground connection members 55 and 56 (connection member 200). It has areas 501 and 502. Note that, in FIG. 13, the first and second ground connection members 55 and 56 are shown by a chain double-dashed line. The first and second ground connection members 55 and 56 electrically connect the first ground region 501 and the second ground region 502.

[Effects of Modification 2 of Embodiment 3]
In the switching power supply device 10 according to the second modification of the third embodiment, the same effect as that obtained by the switching power supply device 10 according to the third embodiment can be obtained. For example, heat concentration in the high-side switching element 11 and the low-side switching element 12 can be reduced.

(Modification 3 of Embodiment 3)
FIG. 14 illustrates the configuration of the switching power supply device 10 according to the third modification of the third embodiment. The switching power supply device 10 according to the second modification of the third embodiment differs from the switching power supply device 10 according to the third embodiment in the configuration of the power supply pattern 40.

<Power supply pattern>
In Modification 3 of Embodiment 3, the power supply pattern 40 has a first power supply connection area 431 and a second power supply connection area 432 instead of the power supply connection area 430 shown in FIG. 11.

《Power connection area》
The first power supply connection region 431 and the second power supply connection region 432 are formed so as to extend in the second direction Y and connect the first power supply region 401 and the second power supply region 402. In this example, the first power supply connection region 431 is arranged at one edge (the right edge in FIG. 14) in the longitudinal direction of the substrate 20, and the second power supply connection region 432 is the other one in the longitudinal direction of the substrate 20. It is arranged at the edge (the left edge in FIG. 14). In this example, the first power source region 401, the second power source region 402, the first power source connecting region 431, and the second power source connecting region 432 are connected to form an uninterrupted annular path. That is, in this example, the power supply pattern 40 has an uninterrupted annular path.

[Effects of Modification 3 of Embodiment 3]
In the switching power supply device 10 according to the third modification of the third embodiment, the same effect as that obtained by the switching power supply device 10 according to the third embodiment can be obtained. For example, heat concentration in the high-side switching element 11 and the low-side switching element 12 can be reduced.

  Further, in the switching power supply device 10 according to the modified example 3 of the third embodiment, the power supply pattern 40 has an uninterrupted annular path. With such a configuration, it is possible to improve the degree of freedom in selecting a current path (shortest current path) between components (for example, the high-side transistor 110 and the capacitor 130) provided in the power supply pattern 40. As a result, the current path between these components can be shortened, and the parasitic inductance of the current path between these components can be reduced. Therefore, the surge voltage (for example, the surge voltage caused by the switching operation of the switching element) applied to the components forming the switching power supply device 10 can be reduced.

  In the switching power supply device 10 according to the second modification of the third embodiment, the ground pattern 50 may have an uninterrupted annular path. That is, at least one of the power supply pattern 40 and the ground pattern 50 may have an uninterrupted annular path.

(Other embodiments)
Further, in the above description, the case where the connection member 200 is configured by a bus bar (a conductor formed in a plate shape) has been described as an example, but the connection member 200 is not limited to this, and the connection member 200 is configured by, for example, a metal conductor wire. It may have been done.

  Further, in the above description, the case where the material forming the connection member 200 is the same as the material forming the heat dissipation layer 23 has been described as an example, but the material forming the connection member 200 forms the heat dissipation layer 23. It may be a different kind of material from the material to be processed.

  Further, in the above description, the case where the number of the capacitors 130 included in the smoothing capacitance unit 13 is the same as the total number of the high-side transistors 110 and the low-side transistors 120 mounted on the substrate 20 is taken as an example, but the present invention is not limited to this. Alternatively, the number of capacitors 130 included in the smoothing capacitance unit 13 may be different from the total number of the high-side transistors 110 and the low-side transistors 120 mounted on the substrate 20.

  Further, the above-described embodiments and modified examples may be combined as appropriate. The above embodiments and modifications are essentially preferable examples, and are not intended to limit the scope of the present invention, its application, or its application.

  As described above, the present disclosure is useful as a switching power supply device.

10 Switching Power Supply 11 High Side Switching Element 12 Low Side Switching Element 110 High Side Transistor 120 Low Side Transistor 130 Capacitor 13 Smoothing Capacitance Section 20 Substrate 21 Insulating Layer 22 Conductive Layer 23 Radiating Layer 24 Radiating Member 25 Fixing Screw 26 Solder Section 27 Nut 28 Bolt 200 connection member 201 main body 202 extension part 30 output patterns 301 to 306 output region 40 power supply patterns 401 to 406 power supply regions 41 to 43 power supply connection member 50 ground patterns 501 to 509 ground region 51 ground connection member

Claims (12)

A switching power supply device having a high-side switching element and a low-side switching element connected in series,
A substrate having an insulating layer and a conductive layer provided on one surface of the insulating layer,
A plurality of high-side transistors provided in the conductive layer and connected in parallel to form the high-side switching element;
A plurality of low-side transistors provided in the conductive layer and connected in parallel to form the low-side switching element ;
A smoothing capacitance portion provided on the conductive layer ,
The plurality of high-side transistors and the plurality of low-side transistors are arranged so that the high-side transistors and the low-side transistors are adjacent to each other in a one-to-one relationship .
The smoothing capacitance section has a plurality of capacitors provided in the conductive layer and corresponding to the plurality of high-side transistors and the plurality of low-side transistors, respectively.
The switching power supply device is arranged such that each of the plurality of capacitors is adjacent to a transistor corresponding to the capacitor among the plurality of high-side transistors and the plurality of low-side transistors . In claim 1 ,
The plurality of high-side transistors and the plurality of low-side transistors are arranged in the first direction such that the high-side transistors and the low-side transistors are adjacent to each other in a one-to-one relationship in the first direction,
Each of the plurality of capacitors is arranged to be adjacent to a transistor corresponding to the capacitor among the plurality of high-side transistors and the plurality of low-side transistors in a second direction orthogonal to the first direction. apparatus. In claim 1 ,
The plurality of high-side transistors, the plurality of low-side transistors, and the plurality of capacitors include a set of the high-side transistor and a capacitor corresponding to the high-side transistor, and a set of the low-side transistor and a capacitor corresponding to the low-side transistor. A switching power supply device in which and are arranged adjacent to each other. A switching power supply device having a high-side switching element and a low-side switching element connected in series,
A substrate having an insulating layer and a conductive layer provided on one surface of the insulating layer,
A plurality of high-side transistors provided in the conductive layer and connected in parallel to form the high-side switching element;
A plurality of low-side transistors that are provided on the conductive layer and are connected in parallel to form the low-side switching element;
The plurality of high-side transistors and the plurality of low-side transistors are arranged so that the high-side transistors and the low-side transistors are adjacent to each other in a one-to-one relationship.
An output pattern, a power supply pattern, and a ground pattern are formed on the conductive layer,
The plurality of high side transistors are electrically connected to the output pattern and the power supply pattern,
The plurality of low-side transistors are electrically connected to the output pattern and the ground pattern,
At least one of the power supply pattern and the ground pattern has a plurality of wiring regions electrically connected by a connecting member. In claim 4 ,
The switching power supply device in which the connecting member is formed of a plate-shaped conductor. In claim 5 ,
The substrate has the insulating layer, the conductive layer, and a heat dissipation layer provided on the other surface of the insulating layer,
The switching power supply device in which the material forming the connecting member is of the same type as the material forming the heat dissipation layer. In Claim 5 or 6 ,
The switching power supply device in which the connection member is joined to the plurality of wiring regions by soldering. In claim 5 ,
The substrate has the insulating layer, the conductive layer, and a heat dissipation layer provided on the other surface of the insulating layer,
The connecting member includes a main body portion formed in a plate shape and facing the conductive layer with a space therebetween, and an extending portion extending from the main body portion toward any one of the plurality of wiring regions. Have,
The substrate has a first through hole penetrating the insulating layer, a second through hole penetrating any one of the plurality of wiring regions and communicating with the first through hole, and a penetrating the heat dissipation layer. And a third through hole communicating with the first through hole is provided,
Wiring in which the second through hole of the plurality of wiring regions is provided in a state where the extension portion of the connecting member is inserted into the first through hole, the second through hole, and the third through hole. Soldered to the area,
In order to avoid contact between the extended portion of the connecting member inserted into the first through hole, the second through hole, and the third through hole and the inner wall of the third through hole, the third through hole is avoided. An opening area of the through hole is larger than an opening area of the first through hole. In Claim 7 or 8 ,
A switching power supply device in which a portion of the connection member that is joined to the plurality of wiring regions by solder is plated to enable joining by solder. In Claim 5 or 6 ,
A nut joined by solder to any one of the plurality of wiring regions;
The switching power supply device further comprising a bolt that penetrates the connection member and is fastened to the nut. A switching power supply device having a high-side switching element and a low-side switching element connected in series,
A substrate having an insulating layer and a conductive layer provided on one surface of the insulating layer,
A plurality of high-side transistors provided in the conductive layer and connected in parallel to form the high-side switching element;
A plurality of low-side transistors that are provided on the conductive layer and are connected in parallel to form the low-side switching element;
The plurality of high-side transistors and the plurality of low-side transistors are arranged so that the high-side transistors and the low-side transistors are adjacent to each other in a one-to-one relationship.
An output pattern, a power supply pattern, and a ground pattern are formed on the conductive layer,
The plurality of high side transistors are electrically connected to the output pattern and the power supply pattern,
The plurality of low-side transistors are electrically connected to the output pattern and the ground pattern,
At least one pattern of the power supply pattern and the ground pattern has a continuous annular path. A switching power supply device having a high-side switching element and a low-side switching element connected in series,
A substrate having an insulating layer and a conductive layer provided on one surface of the insulating layer,
A high-side transistor provided in the conductive layer and connected in parallel to form the high-side switching element;
A low-side transistor provided in the conductive layer and connected in parallel to form the low-side switching element;
A smoothing capacitance portion provided on the conductive layer,
The smoothing capacitor section has a plurality of capacitors provided in the conductive layer and respectively corresponding to the high-side transistor and the low-side transistor,
In the high-side transistor, the low-side transistor, and the plurality of capacitors, a set of the high-side transistor and a capacitor corresponding to the high-side transistor and a set of the low-side transistor and a capacitor corresponding to the low-side transistor are adjacent to each other. Switching power supplies arranged to fit.

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