JP6680376B2 - Pattern forming equipment - Google Patents

Description

  The present invention relates to a pattern forming apparatus that forms a pattern of an electronic device on a sheet substrate.

  In recent years, it has been called a printable electronic, and a display is displayed on a flexible substrate made of resin or ultrathin glass by a printing method such as an intaglio method, a letterpress method, a silk method, or an inkjet method. Attempts have been made to form electronic devices such as. As an electronic device, particularly in forming a circuit pattern including a thin film transistor (TFT), high pattern drawing resolution and high positioning accuracy are required. Therefore, it is considered to use an optical patterning device in addition to the printing method. Has been done.

  In Patent Document 1 shown below, a cylindrical mask is rotated while a long flexible sheet substrate is conveyed in the long direction, and a pattern for an electronic device is scanned and exposed in a predetermined region of the sheet substrate by a exposure method. There is disclosed an exposure device (optical patterning device) that exposes with.

  Further, in an apparatus that continuously processes and processes a long flexible sheet substrate while conveying the sheet substrate, an EPC (edge position controller) is provided in a sheet substrate conveying path as in Patent Document 2 shown below. A mechanism for adjusting the position of the sheet substrate in the width direction (direction orthogonal to the transport direction) is provided. In the EPC mechanism of Patent Document 2, the position of the edge of the sheet substrate is detected in the conveyance path of the sheet substrate sent by the plurality of rotating rollers, and if the edge position is deviated from the reference position, it is corrected. It is disclosed that the rotating roller around which the sheet substrate is wound is shifted in the rotation axis direction.

  Further, in Patent Document 3 shown below, an EPC that applies ultrasonic vibration to a part of the rotation roller around which the sheet substrate is wound around in the rotation axis direction to slightly displace the sheet substrate in the width direction on the outer peripheral surface of the rotation roller. A mechanism is disclosed.

  For example, when a pattern of an electronic device is formed using the exposure apparatus of Patent Document 1, the accuracy of the pattern formation position is determined according to the fineness (minimum line width) of the pattern to be exposed. For example, when a line pattern having a certain line width is formed on a sheet substrate, the positional deviation of the formed line pattern is at least about 1/5 of the line width due to the relationship with the underlying layer or upper layer of the laminated structure. Need to fit inside. For example, in the case of an electronic device including a line pattern having a line width of about 6 μm, the positional deviation of the formed line pattern needs to be set to about ± 1 μm, preferably about ± 0.5 μm.

  In order to form such a highly accurate line pattern, a plurality of alignment marks are provided in advance on the sheet substrate at predetermined intervals along the lengthwise direction. An alignment microscope which is a photoelectric mark detection system for detecting marks is provided. The detection region (detection visual field) on the sheet substrate of the alignment microscope is set to a size of about 100 to 500 μm square, although it varies depending on the size of the alignment mark to be detected and the measurement resolution of the mark position. Therefore, in order to capture the alignment mark in the detection region of such a size while feeding the sheet substrate in the lengthwise direction, the width direction of the sheet substrate should be positioned with an accuracy equal to or smaller than the size of the detection region of the alignment microscope. The EPC mechanism is required to be precise and smooth.

  However, in the EPC mechanism of Patent Document 2, since the rotation roller is mechanically shifted in the rotation axis direction to perform the positioning (position adjustment) in the width direction of the sheet substrate, the minute detection of the alignment microscope is performed as described above. Position adjustment cannot be performed with an accuracy less than the size of the area. For such precise and smooth positioning of the sheet substrate (position adjustment), it is possible to use a rotating roller using ultrasonic vibration as in Patent Document 3, but the back surface of the sheet substrate is a rotating roller. Since vibration is applied to the sheet substrate in a state where the sheet substrate is in contact with the outer peripheral surface under a constant pressure, a resin sheet substrate may cause fine scratches on the back surface or generate dust.

JP, 2011-203331, A JP 2005-008410 A JP, 2013-180863, A

Aspect of the present invention, while conveying the flexible sheet substrate is elongated in the longitudinal direction, a pattern forming apparatus that forms a pattern on the sheet on the substrate by patterning device, the long of the sheet substrate It has an axis of rotation and an outer circumferential surface extending in the short direction which is orthogonal to the direction, while a portion of the long direction of the sheet substrate on which the pattern is formed by the patterning device support following the outer peripheral surface, wherein A rotating drum that rotates about a rotation axis to convey the sheet substrate in the lengthwise direction, and a rotation axis that is set parallel to the rotation axis of the rotating drum, and with respect to the conveyance direction of the sheet substrate. A first guide roller disposed upstream of the rotary drum, which bends the sheet substrate transport path under a predetermined tension in the longitudinal direction; A state in which a rotation axis is set parallel to the rotation axis, the rotation axis is arranged between the rotation drum and the first guide roller in the sheet substrate transport direction, and a predetermined tension is applied in the longitudinal direction. A second guide roller that bends the conveyance path of the sheet substrate with the first guide roller, and the first guide roller for correcting the inclination in the conveyance direction of the entire sheet substrate from the second guide roller toward the rotating drum or the position in the short direction. The distribution of the tension in the long direction acting on the sheet substrate between the guide roller and the second guide roller in the short direction is distributed in the transport path between the first guide roller and the second guide roller. a tension distribution adjusting unit that adjusts a state of the sheet substrate and a non-contact or low friction, disposed upstream of said first guide roller in the conveyance direction of the sheet substrate, An edge detection unit that detects a positional deviation of an edge of the sheet substrate in the short-side direction and an upstream side of the first guide roller, and the sheet substrate is wound in the long-side direction in the direction of the rotation axis. A movable roller that is movable, and adjusts the position of the sheet substrate in the short-side direction roughly by moving the movable roller in the direction of the rotation axis according to the positional deviation detected by the edge detection unit. After that, the tension distribution adjusting unit finely adjusts the position of the sheet substrate in the short-side direction .

It is a figure which shows schematic structure of the device manufacturing system containing the exposure apparatus which exposes the board | substrate of 1st Embodiment. FIG. 2 is a diagram showing scanning lines of spot light scanned on a substrate by the exposure head of FIG. 1 and alignment marks formed on the substrate. It is a figure which shows the structure of the scanning unit of FIG. It is a figure which shows the structure of the tension distribution adjustment part of FIG. It is a figure which shows an example of distribution of the tension | tensile_strength applied to a board | substrate when the temperature of a board | substrate is changed with respect to the width direction of a board | substrate using the temperature adjustment part of FIG. It is a figure which shows the other example of distribution of the tension | tensile_strength applied to a board | substrate when the temperature of a board | substrate is changed with respect to the width direction of a board | substrate using the temperature adjustment part of FIG. It is a figure explaining adjustment of the position in the width direction of a substrate by a tension distribution adjustment part. It is a figure which shows the structure of the tension distribution adjustment part in the modification 1 of 1st Embodiment. It is a side view of the temperature adjustment part in the modification 2 of 1st Embodiment. It is a top view of the temperature adjustment part of FIG. FIG. 13 is a diagram showing a configuration added to an edge position controller in Modification 4 of the first embodiment. It is a figure which shows the structure of the tension distribution adjustment part of 2nd Embodiment. It is a figure for demonstrating the increase of the tension by external force application of the external force application part of FIG. It is a figure which shows the structure of the tension distribution adjustment part in the modification 1 of 2nd Embodiment. It is a flowchart which shows the manufacturing process of a thin film transistor layer.

  A pattern forming apparatus and a pattern forming method according to aspects of the present invention will be described below in detail with reference to the accompanying drawings, with reference to preferred embodiments. Note that the aspects of the present invention are not limited to these embodiments, and include various changes and improvements.

[First Embodiment]
FIG. 1 is a diagram showing a schematic configuration of a device manufacturing system 10 including an exposure apparatus EX that performs an exposure process on a substrate (irradiation target, exposure target) P according to the first embodiment. In the following description, an XYZ orthogonal coordinate system is set, and the X direction, Y direction, and Z direction will be described according to the arrows shown in the figure.

  The device manufacturing system 10 is, for example, a system for manufacturing a flexible display as a device. Examples of flexible displays include organic EL displays. The device manufacturing system 10 sends a substrate P from a supply roll (not shown) formed by winding a flexible sheet substrate (referred to simply as a substrate) P in a roll shape, and continuously performs various processes on the sent substrate P. After that, the substrate P after various treatments is wound up by a recovery roll (not shown), which is a so-called roll-to-roll system structure. The substrate P has a strip shape in which the moving direction (conveying direction) of the substrate P is the longitudinal direction (long) and the width direction is the lateral direction (short). The substrate P after various treatments is in a state in which a plurality of devices are connected, and is a substrate for multiple cutting. The substrate P sent from the supply roll is sequentially subjected to various kinds of processing by the process device PR1, the exposure device EX, the process device PR2 and the like, and is wound by the recovery roll.

  The X direction is a direction (conveyance direction) from the process device PR1 through the exposure device EX to the process device PR2 in the horizontal plane. The Y direction is a direction orthogonal to the X direction in the horizontal plane, and is the width direction of the substrate P. The Z direction is a direction (upward direction) orthogonal to the X and Y directions.

  As the substrate P, for example, a resin film, a foil made of metal or alloy such as stainless steel, or the like is used. Examples of the material of the resin film include polyethylene resin, polypropylene resin, polyester resin, ethylene vinyl copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, polycarbonate resin, polystyrene resin, and vinyl acetate resin. Of these, one containing at least one may be used. Further, the thickness and the rigidity (Young's modulus) of the substrate P may be in a range such that the substrate P does not have folds or irreversible wrinkles due to buckling when passing through the transport path of the exposure apparatus EX. As a base material of the substrate P, a film such as PET (polyethylene terephthalate) or PEN (polyethylene naphthalate) having a thickness of about 25 μm to 200 μm is typical of a suitable sheet substrate.

  Since the substrate P may receive heat in each process performed by the process apparatus PR1, the exposure apparatus EX, the process apparatus PR2, etc., it is preferable to select the substrate P of a material whose coefficient of thermal expansion is not significantly large. . For example, the thermal expansion coefficient can be suppressed by mixing an inorganic filler with the resin film. The inorganic filler may be, for example, titanium oxide, zinc oxide, alumina, silicon oxide, or the like. The substrate P may be a single-layer body of ultra-thin glass having a thickness of about 100 μm manufactured by a float method or the like, or a laminate obtained by laminating the above-mentioned resin film, foil or the like on the ultra-thin glass. May be

  The process apparatus PR1 performs the previous process on the substrate P that is exposed by the exposure apparatus EX. The process apparatus PR1 sends the substrate P, which has been subjected to the previous process, toward the exposure apparatus EX. The substrate P sent to the exposure apparatus EX by the process of the previous step is a substrate (photosensitive substrate) P having a photosensitive functional layer (photosensitive surface) formed on the surface thereof.

  The photosensitive functional layer is applied as a solution on the substrate P and dried to form a layer (film). A typical photosensitive functional layer is a photoresist, but a photosensitive silane coupling agent (SAM) is used as a material that does not require development processing so that the lyophobic property of the portion irradiated with ultraviolet rays is modified. Alternatively, there is a photosensitive reducing agent or the like in which the plating reducing group is exposed at the portion irradiated with ultraviolet rays. When a photosensitive silane coupling agent is used as the photosensitive functional layer, the pattern portion of the substrate P exposed with ultraviolet rays is modified from lyophobic to lyophilic. Therefore, a conductive ink (ink containing conductive nanoparticles such as silver or copper) or a liquid containing a semiconductor material is selectively applied onto the lyophilic portion to form a pattern layer. be able to.

  When a photosensitive reducing agent is used as the photosensitive functional layer, the plating reducing group is exposed on the pattern portion of the substrate P exposed to ultraviolet light. Therefore, after exposure, the substrate P is immediately immersed in a plating solution containing palladium ions or the like for a certain period of time to form (precipitate) a pattern layer of palladium. Although such a plating process is an additive process, if the etching process as a subtractive process is premised, the substrate P sent to the exposure apparatus EX uses PET or PET as a base material. PEN may be used in which a metallic thin film of aluminum (Al), copper (Cu) or the like is entirely or selectively vapor-deposited on the surface thereof, and a photoresist layer is further laminated thereon.

  In the case of the present embodiment, the exposure apparatus EX as the pattern drawing apparatus is a direct drawing type exposure apparatus that does not use a mask, a so-called raster scan type exposure apparatus EX, with respect to the substrate P supplied from the process apparatus PR1. Then, a predetermined pattern such as a display circuit or wiring is exposed. The exposure apparatus EX scans the spot light of the laser light LB for exposure on the substrate P in a predetermined scanning direction (Y direction) while conveying the substrate P in the X direction, and the intensity of the spot light is changed to pattern data ( The pattern is exposed on the surface (photosensitive surface) of the substrate P by performing high-speed modulation (on / off) according to the drawing data).

  The process apparatus PR2 performs post-processes (for example, a plating process, a developing / etching process, etc.) on the substrate P exposed by the exposure apparatus EX. A device pattern layer is formed on the substrate P by the processing of this subsequent step.

  The exposure apparatus EX includes a transport device 12, a light source device 14, an exposure head (drawing head) 16, and a control unit 18. The exposure apparatus EX is stored in the temperature control chamber ECV. This temperature control chamber ECV keeps the inside at a predetermined temperature, thereby suppressing the shape change due to the temperature of the substrate P transported inside. The temperature control chamber ECV is arranged on the installation surface Ea of the manufacturing plant via the passive or active vibration isolation units SU1 and SU2. The vibration isolation units SU1 and SU2 reduce the vibration from the installation surface Ea. The installation surface Ea may be a surface on the installation base or a floor.

  The transfer device 12 transfers the substrate P transferred from the process device PR1 to the process device PR2 at a predetermined speed. The transfer device 12 includes an edge position controller EPC, a tension adjusting roller RT1, a rotary drum (cylindrical drum) 20, a tension adjusting roller RT2, and a drive unit in order from the upstream side (−X direction side) along the transfer direction of the substrate P. It has rollers R1 and R2.

  The edge position controller EPC conveys the substrate P to the rotary drum 20 while adjusting the position of the substrate P conveyed from the process device PR1 in the width direction (Y direction and the short direction of the substrate P). The edge position controller EPC desirably adjusts the position in the width direction of the substrate P so that the lengthwise direction of the substrate P carried into the rotating drum 20 is orthogonal to the axial direction of the rotation axis AX of the rotating drum 20. . The edge position controller EPC will be described in detail later. The rotating drum 20 supports, on its circumferential surface, a portion of the substrate P on which a predetermined pattern is exposed. The rotating drum 20 rotates around a rotation axis AX extending in the Y direction to convey the substrate P in the X direction following the outer peripheral surface (circumferential surface) of the rotating drum 20. A rotation torque from a rotation drive source (not shown) (for example, a motor or a reduction mechanism) is applied to the rotation axis AX. The rotary drive source is controlled by the control unit 18.

  The drive rollers R1 and R2 are arranged at a predetermined interval along the conveyance direction of the substrate P, and give the substrate P after exposure a predetermined slack (play). The drive rollers R1 and R2 rotate while holding the front and back surfaces of the substrate P, and convey the substrate P toward the process apparatus PR2. The drive rollers R1 and R2 are provided on the downstream side (+ X direction side) in the transport direction with respect to the rotary drum 20, and the drive roller R1 is upstream (−X direction) in the transport direction with respect to the drive roller R2. Direction side). The tension adjusting rollers RT1 and RT2 apply a predetermined tension to the substrate P wound and supported by the rotary drum 20. Rotational torque from a rotational drive source (not shown) (for example, a motor or a speed reduction mechanism) is applied to the drive rollers R1 and R2. The rotary drive source is controlled by the control unit 18.

  The light source device 14 has a laser light source and emits laser light (irradiation light, exposure beam) LB used for exposure. The laser light LB may be ultraviolet light having a peak wavelength in the wavelength band of 370 mm or less. The laser light LB may be pulsed light emitted at the oscillation frequency Fs. The laser light LB emitted from the light source device 14 enters the exposure head 16.

  The exposure head 16 includes a plurality of scanning units U (U1 to U5) on which the laser light LB from the light source device 14 respectively enters. The exposure head 16 is carried by the carrying device 12 and exposes (draws) a predetermined pattern on a part of the substrate P supported by the circumferential surface of the rotary drum 20 by a plurality of scanning units (drawing units) U. . The exposure head 16 is a so-called multi-beam type exposure head 16 by having a plurality of scanning units U having the same configuration. The scanning units U1, U3, U5 are arranged on the upstream side (−X direction side) in the transport direction of the substrate P with respect to the rotation axis AX of the rotating drum 20, and the scanning units U2, U4 are the rotation axes of the rotating drum 20. It is arranged on the downstream side (+ X direction side) in the transport direction of the substrate P with respect to AX.

  The scanning unit U converges the incident laser light on the substrate P into spot light, and uses the optical scanning member such as a polygon mirror to convert the spot light into a scanning line (Y direction) that extends in the scanning direction (Y direction). Scan along the drawing line). As shown in FIG. 2, the scanning lines L of each scanning unit U are set so as to be connected to each other in the Y direction (width direction of the substrate P) without being separated from each other. In FIG. 2, the scanning line L of the scanning unit U1 is represented by L1, and the scanning line L of the scanning unit U2 is represented by scanning line L2. Similarly, the scan lines L of the scan units U3, U4, U5 are represented by scan lines L3, L4, L5. In this way, each scanning unit U shares the scanning area so that the scanning units U1 to U5 all cover the entire exposure area W in the width direction. Note that the drawing width in the Y direction by one scanning unit U (the length of the scanning line L) is, for example, about 20 to 50 mm, and therefore three scanning units U1, U3, and U5 having an odd number and an even number are scanning units. By arranging a total of five scanning units U including the second scanning units U2 and U4 in the Y direction, the drawable width in the Y direction is expanded to about 100 to 250 mm.

  Further, each scanning unit U modulates (on / off) the intensity of the spot light with which the substrate P is irradiated at high speed according to the drawing data according to a predetermined pattern. Thereby, a predetermined pattern can be exposed (drawn) on the exposure region W on the substrate P. For the modulation of the spot light, for example, an acoustic wave (high frequency signal) is used to diffract the incident laser light LB to change an optical path of the laser light LB, that is, an advancing direction of the laser light LB. Modulator) can be used. Specifically, each scanning unit U has the acousto-optic element, and when the drive signal (high-frequency signal) of on is input to the acousto-optic element from the control unit 18, the incident laser beam LB is irradiated onto the substrate P. To do. On the other hand, each scanning unit U does not irradiate the substrate P with the incident laser beam LB when an off drive signal (high frequency signal) is input to the acoustooptic device from the control unit 18. The scanning unit U is a known technique as disclosed in International Publication No. 2013/146184 (see FIG. 36), but the scanning unit U will be briefly described with reference to FIG.

  FIG. 3 shows the configuration of the scanning unit U2. However, since each scanning unit U (U1 to U5) has the same configuration, only the scanning unit U2 will be described and the other scanning units U will be described. The description is omitted. As shown in FIG. 3, the scanning unit U2 includes, for example, a condenser lens 30, a drawing optical element (light modulation element) 32, a collimator lens 34, a reflection mirror 36, a cylindrical lens 38, a focus lens 40, a reflection mirror 42, and the like. It has a polygon mirror (optical scanning member) 44, a reflection mirror 46, an f-θ lens 48, a cylindrical lens 50, and an absorber 52.

  The laser light LB that enters the scanning unit U2 travels from the upper side to the lower side (−Z direction) in the vertical direction, and enters the drawing optical element 32 via the condenser lens 30. The condenser lens 30 condenses (converges) the laser light LB that is incident on the drawing optical element 32 so as to form a beam waist in the drawing optical element 32. The drawing optical element 32 is transparent to the laser light LB, and for example, an acousto-optic modulator (AOM) is used.

  When the drive signal (high frequency signal) from the control unit 18 is off, the drawing optical element 32 transmits the incident laser beam LB to the absorber 52 side, and the drive signal (high frequency signal) from the control unit 18 is transmitted. ) Is on, the incident laser beam LB is diffracted and directed toward the reflection mirror 36. The absorber 52 is an optical trap that absorbs the laser light LB in order to suppress the leakage of the laser light LB to the outside.

  In this way, by turning on / off the drawing drive signal (ultrasonic wave frequency) to be applied to the drawing optical element 32 at high speed according to the pattern data (black and white), the laser light LB is reflected on the reflection mirror 36. Whether to go to the absorber 52 is switched. This means that when viewed on the substrate P, the intensity of the laser light LB (spot light SP) reaching the photosensitive surface is high at either a high level or a low level (for example, zero level) according to the pattern data. Means to be modulated to.

  The collimator lens 34 collimates the laser light LB traveling from the drawing optical element 32 to the reflection mirror 36. The reflection mirror 36 reflects the incident laser beam LB in the −X direction, and irradiates the reflection mirror 42 via the cylindrical lens 38 and the focus lens 40. The reflection mirror 42 irradiates the polygon mirror 44 with the incident laser beam LB. The polygon mirror (rotary polygonal mirror) 44 continuously changes the reflection angle of the laser light LB by rotating, and the position of the laser light LB irradiated on the substrate P is in the scanning direction (width direction of the substrate P). To scan. The polygon mirror 44 is rotated at a constant speed by a rotation drive source (not shown) (for example, a motor or a speed reduction mechanism). The rotary drive source is controlled by the control unit 18.

  The cylindrical lens 38 provided between the reflection mirror 36 and the reflection mirror 42 cooperates with the focus lens 40 to transmit the laser beam LB to the polygon mirror 44 in the non-scanning direction (Z direction) orthogonal to the scanning direction. Focus (converge) on the reflective surface. Even if there is a case where the reflecting surface is inclined with respect to the Z direction (inclination from the parallel state between the normal line of the XY plane and the reflecting surface), the influence of the cylindrical lens 38 can be suppressed. , The irradiation position of the laser beam LB irradiated on the substrate P is prevented from shifting in the X direction.

  The laser light LB reflected by the polygon mirror 44 is reflected in the −Z direction by the reflection mirror 46, and enters the f−θ lens 48 having the optical axis AXu parallel to the Z axis. The f-θ lens 48 enables the laser light LB to be scanned in the Y direction accurately at a constant speed. The laser light LB emitted from the f-θ lens 48 passes through a cylindrical lens 50 whose generatrix is parallel to the Y direction and becomes a spot light SP of a substantially circular shape with a diameter of several μm on the substrate P. Is irradiated. The spot light (spot, scanning spot, scanning spot light) SP is one-dimensionally scanned in one direction along the scanning line L extending in the Y direction by the polygon mirror 44.

  The control unit 18 controls each unit of the exposure apparatus EX and causes each unit to execute processing. The control unit 18 includes a computer and a storage medium in which the program is stored, and the computer executes the program stored in the storage medium to function as the control unit 18 in the first embodiment. .

  Further, the exposure apparatus EX is provided with three alignment microscopes AM (AM1 to AM3) for detecting the alignment marks Ks (Ks1 to Ks3) formed on the substrate P as shown in FIG. The alignment mark Ks is a reference mark for relatively aligning (aligning) a predetermined pattern drawn in the exposure region W on the substrate P with the substrate P. The alignment marks Ks are formed on both ends of the substrate P in the width direction at regular intervals along the longitudinal direction (long direction) of the substrate P, and between the exposure regions W and W. , Is also formed in the center of the substrate P in the width direction.

  The alignment microscope AM is provided upstream of the scanning lines L1 to L5 formed by the exposure head 16 in the transport direction of the substrate P (−X direction side). The alignment microscopes AM1 to AM3 are provided along the Y direction, the alignment microscope AM1 detects the alignment mark Ks1 formed at the end portion of the substrate P on the + Y direction side, and the alignment microscope AM2 detects the alignment of the substrate P. The alignment mark Ks2 formed at the end portion on the −Y direction side is detected, and the alignment microscope AM3 detects the alignment mark Ks3 formed at the center of the substrate P in the width direction. The alignment microscope AM projects the illumination light onto the substrate P, images the reflected light with an image pickup device such as a CCD or CMOS, and detects the alignment mark Ks. The position information of the detected alignment mark Ks is sent to the control unit 18. The alignment illumination light is light in a wavelength range having little sensitivity to the photosensitive functional layer on the substrate P, for example, light having a wavelength of about 500 to 800 nm.

  The configuration of the edge position controller EPC will be described with reference to FIGS. 1 and 4. The edge position controller EPC includes drive rollers DR1 and DR2, guide rollers GR1 and GR2 that are a pair of guide members, and a tension distribution adjusting unit 60. The rotating shafts of the drive rollers DR1 and DR2 and the rotating shafts of the pair of guide rollers GR1 and GR2 are provided so as to be parallel to the rotating shaft AX of the rotating drum 20, and the guide rollers GR1 and GR2 are Have the same diameter. The drive roller DR1 is provided on the upstream side (the -X direction side) in the transport direction of the substrate P with respect to the drive roller DR2, and the drive rollers DR1 and DR2 are of the substrate P sent to the edge position controller EPC. The substrate P is conveyed while being rotated toward the rotary drum 20 while holding both the front and back sides.

  The pair of guide rollers GR1 and GR2 conveys the substrate P in order to apply a predetermined tension to the substrate P in the longitudinal direction (conveying direction) of the substrate P between the drive roller DR1 and the drive roller DR2. It bends the path. Therefore, the guide roller GR1 is provided above the drive roller DR1 (+ Z direction), and the guide roller GR2 is provided above the drive roller DR2 (+ Z direction). The substrate P conveyed from the drive roller DR1 is bent upward (+ Z direction) by the guide roller GR1 and guided to the guide roller GR2, and the substrate P conveyed from the guide roller GR1 is downward (−Z direction) by the guide roller GR2. ) And is guided to the drive roller DR2. Therefore, a predetermined tension is applied between the pair of guide rollers GR1 and GR2.

  The tension distribution adjusting unit 60 adjusts the distribution of the tension applied to the substrate P in the width direction (Y direction) in a non-contact state or a low friction state with the substrate P. The tension distribution adjusting unit 60 includes temperature adjusting units 62 and 64 that change the temperature of the substrate P in the width direction of the substrate P. The temperature adjusting units 62 and 64 are provided along the transport direction of the substrate P, and the temperature adjusting unit 62 is provided upstream of the temperature adjusting unit 64 in the transport direction of the substrate P (−X direction side). Has been. The temperature adjusting units 62 and 64 have a plurality of heating elements 66 arranged along the width direction of the substrate P, and the temperature adjusting sections 62 and 64 control the heat generation amount of each heating element 66. The heating element 66 generates heat and applies a temperature to the substrate P (heats the substrate P). The temperature adjusting units 62 and 64 can individually control the amount of heat generated by each heating element 66. As a configuration of the heating element 66, for example, a resistance is included, and the amount of heat generated by the heating element 66 can be controlled by controlling the amount of current passed through the resistors by the temperature adjusting units 62 and 64. The temperature adjusting units 62 and 64 can adjust the temperature of the substrate P in the region facing the heating element 66 in a non-contact state with the substrate P by the heating element 66. The heating element 66 may have a substantially plate shape.

  The plurality of heating elements 66 of the temperature adjusting unit 62 are arranged at predetermined intervals so as to cover the entire width of the substrate P, and the plurality of heating elements 66 of the temperature adjusting unit 64 cover the entire width of the substrate P. Thus, they are arranged at a predetermined interval. The number of heating elements 66 arranged along the width direction of the substrate P of the temperature adjusting section 62 is larger than the number of heating elements 66 arranged along the width direction of the substrate P of the temperature adjusting section 64. That is, the temperature adjusting unit 62 can adjust the temperature of the substrate P in the width direction of the substrate P more finely than the temperature adjusting unit 64. The lengths of the heating elements 66 of the temperature adjusting section 62 in the Y direction are the same, and the lengths of the heating elements 66 of the temperature adjusting section 64 in the Y direction are the same. The length of the heating element 66 of the temperature adjusting section 62 in the Y direction is set to be shorter than the length of the heating element 66 of the temperature adjusting section 64 in the Y direction. The lengths of the heating elements 66 of the temperature adjusting section 62 in the Y direction do not have to be the same, and the lengths of the heating elements 66 of the temperature adjusting section 64 in the Y direction do not have to be the same.

  In the first embodiment, the temperature adjusting unit 62 has seven heating elements 66 along the width direction of the substrate P, and the temperature adjusting unit 64 has two heat generating units 66 along the width direction of the substrate P. It has a heating element 66. Therefore, the temperature adjusting unit 62 can control the temperature of the substrate P in each of the seven regions in the width direction of the substrate P, and the temperature adjusting unit 64 sets the temperature of the substrate P to two in the width direction of the substrate P. It can be controlled for each area. The temperature adjusting units 62 and 64 are arranged below the substrate P (on the −Z direction side) so as to heat the substrate P from the back surface side, but the temperature adjusting units 62 and 64 are provided so as to warm the substrate P from the front surface side. It may be arranged above (+ Z direction side). Further, one of the temperature adjusting parts 62 and 64 may be arranged above the substrate P and the other may be arranged below.

  Since the substrate P expands as the temperature rises, the tension applied decreases as the temperature rises. Therefore, by applying the temperature to the substrate P so that the temperature distribution in the width direction of the substrate P is changed by the temperature adjusting units 62 and 64, the distribution of the tension applied to the substrate P in the width direction (Y direction). Can be adjusted.

  The temperature applied to the substrate P by the temperature adjusting units 62 and 64 is preferably equal to or lower than the glass transition temperature of the substrate P. When the main component of the substrate P is PET (polyethylene terephthalate), the high temperature side is lower than 120 ° C., It is preferably 100 ° C or lower. When lowering the temperature applied to the substrate P with respect to the environmental temperature in which the apparatus is installed (ambient temperature of the substrate P), an extremely low temperature is avoided and the surface of the substrate P is kept in an atmosphere so that dew condensation does not occur. It is advisable to prepare an environmental control device (chamber, etc.) that suppresses the humidity.

  FIG. 5 is a diagram showing an example of the distribution in the width direction of the tension T applied to the substrate P when the temperature of the substrate P is changed in the width direction of the substrate P using the temperature adjusting unit 62. The black dots (dots) attached to the substrate P in FIG. 5 indicate the temperature of the substrate P, and the region with more black dots indicates that the temperature of the substrate P is higher. Therefore, in the example shown in FIG. 5, the temperature adjusting unit 62 controls the heat generation amounts of the plurality of heat generating elements 66 so that the temperature of the substrate P becomes higher toward the + Y direction side of the substrate P. That is, the temperature adjusting unit 62 minimizes the amount of heat generated by the heating element 66 located closest to the −Y direction side (including 0) among the plurality of heating elements 66, and the heating element 66 located closest to the + Y direction side. Of the heating element 66 is maximized, and the heating value of the heating element 66 is gradually increased from the −Y direction side toward the + Y direction side, so that the temperature of the substrate P has a gradient in the width direction of the substrate P. I am making it.

  Therefore, the tension T applied to the substrate P decreases from the −Y direction side toward the + Y direction side. In this case, of the substrate P, the tension T1 of the region facing the heating element 66 located on the most negative side is the highest, and the tension T2 of the region facing the heating element 66 located most on the plus direction is the lowest. Become. A temperature difference in the width direction of the substrate P (on the + Y direction side and on the −Y direction side) causes a bending moment M as shown in FIG. 5 on the substrate P, which causes the substrate P to move in the width direction. Bend and shift. Since the substrate P bends toward the side where the applied tension T is large, the conveyance direction bends toward the side where the tension T is large (in the example of FIG. 5, the −Y direction side), and the position of the substrate P in the width direction is −. Shift to the Y direction side. The larger the temperature difference, the larger the change in the tension applied (acting) to the substrate P in the width direction and the larger the bending moment M. Therefore, the movement amount by which the position of the substrate P in the width direction shifts in the Y direction. Also grows.

Here, a change in tension T per unit width (hereinafter, tension change ΔT) due to a temperature change Δt per unit width will be described. Assuming that the thermal expansion coefficient of the substrate P is Tα and the longitudinal elastic coefficient is E, the change in tension ΔT can be approximately represented by Expression (1).
ΔT≈−E × Tα × L ′ / L × Δt (1)

  Here, L ′ in the mathematical expression (1) represents the length in the long direction (temperature adjustment length) in which the temperature change occurs along the width direction of the substrate P, and L is the tension T applied. The length of the substrate P in the longitudinal direction is shown. That is, L represents the length of the substrate P from the guide roller GR1 to the guide roller GR2. The original tension T acting on the substrate P is not included in the equation (1). This means that if the substrate P extends in the lengthwise direction by a constant amount (ΔLto) over the length L due to the tension T that originally acts, a part of the length L of the substrate P (length L This is because the amount of extension changes from ΔLto due to the deformation (strain) of the substrate P caused by changing the temperature of (). For example, when the amount of extension under the initial tension is a constant amount ΔLto, and the amount of expansion and contraction due to temperature change (deformation amount depending on temperature) is ΔLtt, the overall amount of extension is ΔLto + ΔLtt, or ΔLto−. ΔLtt. From this, the change in the extension amount of the substrate P depending on the temperature change Δt, that is, the temperature-dependent change rate of the shape (strain) represented by the thermal expansion coefficient Tα and the longitudinal elastic modulus E corresponds to the tension change ΔT. It will be. This will be specifically described below.

  The longitudinal elastic modulus E is expressed by E = σ / ε, where σ is the stress per unit area and ε is the strain amount (deformation amount), and the tension T (σ = It is also T). Therefore, the length when the substrate P is in a tensionless state between the guide roller GR1 and the guide roller GR2 is Lo, the initial tension in the lengthwise direction acting on the substrate P is To, and the tension is determined according to the tension To. When the amount of expansion / contraction of the substrate P in the longitudinal direction (deformation amount) is ΔLto, the length L between the guide roller GR1 and the guide roller GR2 is expressed as L = Lo + ΔLto. Using the longitudinal elastic coefficient E of the substrate P, the deformation amount ΔLto is ΔLto = Lo · To / E, and the initial tension To is represented by To = ΔLto · E / Lo.

On the other hand, in the range of the length L ′ in the lengthwise direction of the substrate P whose temperature is adjusted, the temperature P expands (deforms) in the lengthwise direction as the temperature changes by Δt, so the deformation amount ΔLtt of the substrate P due to the temperature change. Is represented by ΔLtt = L ′ · Tα · Δt. When the stress acting on the substrate P by this deformation amount ΔLtt, that is, the tension acting on the substrate P after the temperature change Δt is T ′, T ′ = (ΔLto−ΔLtt) · E / Lo. From the above, the change in tension ΔT is represented by ΔT = T′−To, which is represented by the following mathematical expression (2).
ΔT = (ΔLto−ΔLtt) · E / Lo−ΔLto · E / Lo (2)

When this equation (2) is organized and transformed into an equation including the thermal expansion coefficient Tα and the temperature change Δt, the tension change ΔT is expressed as the following equation (3).
ΔT = −To · L ′ · Tα · Δt / ΔLto (3)

Here, the deformation amount ΔLto [ΔLto = Lo · To / E] is sufficiently small with respect to the length Lo and can be regarded as a relationship Lo >> ΔLto. Therefore, the relationship L = Lo + ΔLto can be approximately treated as L≈Lo. . Therefore, the equation (3) is approximately represented by the following equation (4), which is the same as the above equation (1).
ΔT ≒ -To ・ L '・ Tα ・ Δt / (L ・ To / E)
= -To ・ L '・ Tα ・ Δt ・ E / L
= -L '/ L · Δt · Tα · E (4)

  As described above, the tension change ΔT is irrespective of the original tension T acting on the substrate P, the length L between the guide rollers GR1 and GR2, the temperature control length L ′, and the temperature. It is determined by the change Δt and the physical properties of the substrate P (thermal expansion coefficient Tα, longitudinal elastic coefficient E). The larger the temperature change Δt, the larger the tension change ΔT. Further, the ratio of the length in the lengthwise direction (temperature control length) L'in which the temperature change occurs to the length L in the lengthwise direction of the substrate P to which the tension T is applied (acting) is The larger the value, the larger the change in tension ΔT. The larger the change in tension ΔT, the larger the bending moment M generated in the substrate P.

  Although the example in which the substrate P is shifted in the width direction by using the temperature adjusting unit 62 has been described, the temperature of the substrate P is changed in the width direction of the substrate P by using the temperature adjusting unit 64 to change the substrate P to the substrate P. The distribution of the applied tension T in the width direction may be adjusted. For example, the temperature adjustment unit 64 reduces the heat generation amount of the heat generating element 66 located on the −Y direction side (including the heat generation amount 0) and increases the heat generation amount of the heat generating element 66 located on the + Y direction side. May be. Even in this case, since a temperature difference occurs between the −Y direction side and the + Y direction side of the substrate P, a bending moment M is generated, and the position of the substrate P in the width direction can be shifted in the Y direction. Further, both the temperature adjusting unit 62 and the temperature adjusting unit 64 may be used to change the temperature distribution in the width direction of the substrate P to adjust the distribution in the width direction of the tension T applied to the substrate P. . That is, the temperature adjusting units 62 and 64 may set the temperature on the side opposite to the side on which the position of the substrate P is shifted in the width direction to be higher than the temperature on the side to be shifted.

  FIG. 6 is a diagram showing another example of the distribution in the width direction of the tension T applied to the substrate P when the temperature of the substrate P is changed in the width direction of the substrate P using the temperature adjusting unit 62. is there. The black dots (dots) given to the substrate P in FIG. 6 indicate the temperature of the substrate P, as in FIG. 5, and it is shown that the temperature of the substrate P is higher in the region having more black dots. Therefore, in the example shown in FIG. 6, the temperature adjusting unit 62 includes a plurality of heating elements 66 so that the temperature on the center side in the width direction of the substrate P is the highest and the temperature on both ends in the width direction of the substrate P is the lowest. It is a figure when the amount of heat generation of is controlled. That is, the temperature adjusting unit 62 minimizes the heat generation amount of the heat generation member 66 located closest to the −Y direction side and the + Y direction side among the plurality of heat generation members 66 (the heat generation amount includes 0), and the center in the width direction. The heat generation amount of the heat generating element 66 located at is maximized, and the heat generation amount of the heat generating element 66 is gradually increased from both ends in the width direction of the substrate P toward the center in the width direction. The temperature of P has a gradient.

  Therefore, the tension applied to the substrate P decreases from both ends in the width direction toward the center in the width direction. In this case, in the substrate P, the tensions T1 and T2 of the regions facing the heating element 66 located closest to the −Y direction side and the + Y direction side are the highest, and the regions of the region facing the heating element 66 located in the center in the width direction are located. The tension T3 is the lowest. As a result, the tension on both end sides of the substrate P in the width direction becomes higher than that on the center side in the width direction, so that it is possible to suppress wrinkles from being formed in the center of the substrate P in the width direction.

  The tension distribution adjusting unit 60 (temperature adjusting units 62 and 64) changes the applied temperature in the width direction of the substrate P according to the control of the control unit 18 to make the temperature of the substrate P incline. The control unit 18 controls the tension distribution adjusting unit 60 (temperature adjusting units 62 and 64) according to the position of the alignment marks Ks (Ks1 to Ks3) detected by the alignment microscope AM (AM1 to AM3). For example, as shown in FIG. 7, since the position in the width direction of the substrate P is deviated to the + Y direction side between the guide rollers GR1 and GR2, the substrate P is conveyed obliquely with respect to the rotation axis of the guide roller GR2. In this case, the substrate P is loaded obliquely with respect to the rotation axis AX of the rotary drum 20. As a result, the exposure accuracy of the exposure apparatus EX may decrease.

  Therefore, the control unit 18 determines that the substrate P has been obliquely loaded (inclined into) with respect to the rotation axis AX of the rotary drum 20 based on the detected position of the alignment mark Ks, or the substrate P. When it is determined that the substrate P has been loaded into the rotary drum 20 with the position in the width direction of the substrate shifted from the desired position, the tension distribution adjusting unit 60 (temperature adjusting units 62, 64) is controlled to cause the substrate The position of P in the width direction (Y direction) is shifted in the Y direction. In the example shown in FIG. 7, the position in the width direction of the substrate P is shifted to the −Y direction side. In addition, in FIG. 7, the substrate P shifted in the −Y direction is represented by a substrate P ′, and the substrate P ′ is represented by a two-dot chain line. Accordingly, the substrate P can be transported so as to be orthogonal to the rotation axis AX of the rotary drum 20 with respect to the axial direction. That is, the lengthwise direction of the substrate P carried into the rotary drum 20 and the axial direction of the rotation axis AX of the rotary drum 20 can be made orthogonal to each other. That is, it is possible to correct a tilt error in the carrying direction of the substrate P or a position error in the width direction of the substrate P.

  As described above, since the temperature adjusting portions 62 and 64 change the temperature along the width direction of the substrate P (because the temperature distribution is changed), the tension applied to the substrate P in a state of not being in contact with the substrate P. The distribution in the width direction of can be changed. As a result, the position of the substrate P in the width direction can be adjusted precisely and smoothly. Further, it is possible to prevent wrinkles from being formed in the center of the substrate P in the width direction.

  In the first embodiment, the tension distribution adjusting unit 60 of the edge position controller EPC is provided with both the temperature adjusting unit 62 and the temperature adjusting unit 64, but only one of them may be provided. .

[Modification of First Embodiment]
The first embodiment may be modified as follows.

  (Modification 1) In the above-described first embodiment, the temperature adjusting units 62 and 64 of the edge position controller EPC use the plurality of heat generating elements 66 arranged along the width direction of the substrate P so that the temperature of the substrate P increases. Although the temperature distribution in the width direction is adjusted, at least one of the temperature adjusting units 62 and 64 may have only one heating element 66 having a size that covers the entire width of the substrate P. In the first modification, as shown in FIG. 8, the tension distribution adjusting unit 60 further includes a driving unit 68 that moves the temperature adjusting units 62 and 64. Note that FIG. 8 shows an example in which the temperature adjusting units 62 and 64 are provided above the substrate P (+ Z direction side).

  The drive unit 68 moves the temperature adjusting units 62 and 64 in the vertical direction (Z direction), and allows the temperature adjusting units 62 and 64 to freely tilt with respect to the surface of the substrate P in the width direction of the substrate P. The rotary shaft Ax1 is rotated around the center of rotation. The rotation axis Ax1 is provided at the center of the temperature adjusting units 62 and 64 in the width direction. In this way, the temperature applied to the substrate P can be changed by moving the temperature adjusting units 62 and 64 in the vertical direction. Further, by rotating the temperature adjusting units 62 and 64 about the rotation axis Ax1, even if there is only one heating element 66, the temperature applied in the width direction of the substrate P is inclined (gradient). It is possible to have it. Also in this modification 1, the same effect as that of the first embodiment can be obtained, and the temperature gradient of the substrate P can be made smoother. The driving unit 68 moves the temperature adjusting units 62 and 64 under the control of the control unit 18.

  (Modification 2) In Modification 2, at least one of the temperature adjusting units 62 and 64 is provided with a roller-type heating element 66A instead of the plate-shaped heating element 66, and the heating element 66A is a substrate in a low friction state. It comes into contact with P and rotates as the substrate P is transported. FIG. 9 is a side view of the temperature adjusting unit 62 in the second modification, and FIG. 10 is a plan view of the temperature adjusting unit 62 in the second modification. The temperature adjusting unit 62 includes a plurality of temperature adjusting rollers 70 having a plurality of roller-type heating elements 66A along the substrate P transport direction. The temperature control roller 70 is composed of a plurality of heating elements 66A arranged so that their rotation axes coincide with each other in the Y direction. The plurality of heating elements 66A arranged along the Y direction of the temperature adjusting roller 70 are arranged so as to cover the entire width of the substrate P. In the example shown in FIG. 9, each temperature adjustment roller 70 is composed of five heating elements 66A. The plurality of heating elements 66A have the same diameter and the same length in the Y direction. The lengths of the heating elements 66A of the temperature adjusting roller 70 in the Y direction may be changed, and the lengths of the heating elements 66A in the Y direction may be changed for each of the temperature adjusting rollers 70.

  The heating elements 66A are individually rotatably provided. Further, the amount of heat generated by each heating element 66A can be individually controlled. Further, the temperature adjusting unit 62 controls the heating elements 66A of the temperature adjusting rollers 70 so that the heating elements 66A of the temperature adjusting rollers 70 arranged at the same position in the width direction of the substrate P have the same amount of heat generation. To do. That is, the heat generation amount of the heating element 66A of each temperature adjustment roller 70 arranged in parallel with the X direction is controlled to be the same. Thereby, for example, the heat generation amount of the heat generating element 66A of each temperature adjustment roller 70 arranged on the most + Y direction side becomes the same, and the heat generation amount of the heat generation element 66A of each temperature adjustment roller 70 arranged at the center in the width direction is the same. Becomes

  Similarly, the temperature adjusting unit 64 may include a temperature adjusting roller 70 including a roller-type heating element 66 instead of the plate-shaped heating element 66. The temperature adjusting roller 70 of the temperature adjusting unit 64 may have a number of heat generating elements 66A different from the number of heat generating elements 66A forming the temperature adjusting roller 70 of the temperature adjusting unit 62 (not shown). For example, the temperature adjusting roller 70 of the temperature adjusting unit 64 may be composed of two heating elements 66A. Incidentally, as a reminder, this roller-type heating element 66A does not apply tension to the substrate P unlike the guide rollers GR1 and GR2, and does not bend the transport path of the substrate P.

  Since the heat generating element 66A of the temperature adjusting roller 70 of the temperature adjusting portions 62 and 64 contacts the substrate P in a low friction state, when the substrate P is transported in the transport direction, the heat generating element 66A also rotates. Then, the temperature adjusting units 62 and 64 control the heat generation amounts of the heating elements 66 </ b> A of the plurality of temperature adjusting rollers 70 to apply the temperature to the substrate P so as to change the temperature distribution in the width direction of the substrate P. Therefore, the distribution of the tension applied to the substrate P in the width direction (Y direction) can be adjusted. Therefore, also in the second modification, the same effect as that of the first embodiment can be obtained. Further, in the present second modification, since the heating element 66A contacts the substrate P, it becomes easier to adjust the temperature distribution in the width direction of the substrate P than when the heating element 66 does not contact the substrate P. The temperature adjusting units 62 and 64 of the second modification also control the amount of heat generated by each heating element 66A under the control of the control unit 18.

  (Modification 3) In the first embodiment and Modifications 1 and 2 thereof, the temperature adjusting units 62 and 64 include the heat generating element 66 or the heat generating element 66A that generates heat to apply the temperature to the substrate P. However, in place of the heating element 66 or the heating element 66A, a cooling body that gives a cooled temperature to the substrate P (cools the substrate P) is provided, and the temperature given to each substrate by the cooling body is individually controlled. You may do it. Even in this case, the same effect as the first embodiment can be obtained. Further, the tension distribution adjusting unit 60 may include both a temperature adjusting unit having the heating element 66 and a temperature adjusting unit having a cooling body.

  (Modification 4) As shown in FIG. 11, the edge position controller EPC described in the first embodiment and the modifications 1 to 3 further includes a substrate as described in Patent Document 2 above. An edge detection unit 80 that detects an edge of P, a rotation movement roller 82 that is movable around the rotation shaft 82a in the axial direction (S direction) of the rotation shaft 82a that is rotated around the substrate P while a predetermined tension is applied, and rotation. A roller driving unit 84 for moving the moving roller 82 in the axial direction (S direction) may be provided. The edge detection unit 80 and the rotational movement roller 82 are provided on the upstream side (−X direction side) in the transport direction of the substrate P with respect to the guide roller GR1 (tension distribution adjustment unit 60). When the edge of the substrate P detected by the edge detection unit 80 is deviated from the reference position, the control unit 18 controls the roller driving unit 84 to move the rotational movement roller 82 in the axial direction (S direction). Then, the position of the substrate P in the width direction is adjusted. As a result, the position of the substrate P in the width direction can be roughly and roughly adjusted by the rotational movement roller 82, and then the position of the substrate P in the width direction can be finely adjusted by the tension distribution adjusting unit 60. Therefore, the position adjustment of the substrate P in the width direction can be performed quickly and with high accuracy.

[Second Embodiment]
In the first embodiment and each modification thereof, the tension distribution adjusting unit 60 includes the temperature adjusting units 62 and 64, but in the second embodiment, instead of the temperature adjusting unit 62, An external force applying unit 90 is provided that changes the external force for bending the substrate P in the width direction and applies the external force to the substrate P in a non-contact state. In the second embodiment, the same components as those in the first embodiment will be denoted by the same reference numerals and the illustration thereof will be omitted, and only different portions will be described.

  As shown in FIG. 12, the tension distribution adjusting unit 60 according to the second embodiment includes an external force applying unit 90 and a gas supply unit 92 that supplies gas to the external force applying unit 90. The external force imparting section 90 is arranged above the substrate P (+ Z direction) and has a plurality of nozzles (spouting sections) 94 arranged along the width direction of the substrate P. The plurality of nozzles 94 are arranged at predetermined intervals so as to cover the entire width of the substrate P. In the example shown in FIG. 12, seven nozzles 94 are provided. The nozzle 94 applies an external force to the substrate P by bending (jetting) gas onto the surface of the substrate P to bend the substrate P downward (−Z direction). The nozzle 94 may apply an external force to the substrate P by bending the back surface of the substrate P to bend the substrate P upward (+ Z direction).

  The gas supply unit 92 supplies the gas, to which a constant pressure is applied, to the external force application unit 90 under the control of the control unit 18. The external force application unit 90 controls the pressure of the gas ejected from each nozzle 94. For example, the external force imparting unit 90 controls the pressure of the gas sprayed from each nozzle 94 individually by adjusting the aperture of each nozzle 94 under the control of the control unit 18. Thereby, the external force applied to the substrate P can be changed in the width direction of the substrate P.

  When an external force that bends the substrate P is applied, the tension T in the region of the substrate P to which the external force is applied increases. Further, the greater the external force applied, the greater the increase amount of the tension T. Therefore, by changing the external force applied in the width direction of the substrate P by the external force applying unit 90, the distribution of the tension T applied to the substrate P in the width direction (Y direction) can be adjusted.

FIG. 13 is a diagram for explaining an increase in the tension T due to application of an external force. When gas is blown onto the substrate P by the nozzle 94 of the external force imparting section 90, the substrate P bends downward. When the inclination angle of the substrate P caused by this bending is α, the change (tension change) ΔT of the tension T per unit width can be expressed by the equation (5) with the longitudinal elastic coefficient of the substrate P being E.
ΔT≈E · (1 / cos (α) -1) (5)

  Note that, also in the mathematical expression (5), regardless of the original tension T, the local extension amount of the substrate P due to the external force of the substrate P is similarly to that described in the above mathematical expressions (2) to (4). The change, that is, the change rate of the shape (strain) represented by the longitudinal elastic modulus E corresponds to the change in tension ΔT. This will be described below.

When the substrate P is in a tensionless state between the guide rollers GR1 and GR2 (length L), the length is Lo, and when the angle α is zero, the length of the substrate P corresponding to the initial tension To is long. The deformation amount (elongation amount in this case) ΔLto is ΔLto = Lo · To / E from the relation of L = Lo + ΔLto. Therefore, the length Lo in the tensionless state is represented by Lo = ΔLto · E / To. Further, when the amount (elongation amount) of the substrate P deformed in the lengthwise direction by the angle α under the initial tension To is ΔLα, the elongation amount ΔLα is expressed by Expression (6).
ΔLα = L · (1 / cos (α) −1) (6)

The change in tension ΔT is calculated as ΔT = To · (ΔLα / ΔLto) by comparing the amount of expansion ΔLto when the angle α is zero with the amount of expansion ΔLα when the angle α is not zero. When this relational expression is rearranged, the following mathematical expression (7) is obtained.
ΔT = To · [L · (1 / cos (α) -1)] / [Lo · To / E]
= [L · (1 / cos (α) -1)] / [Lo / E]
= (L / Lo) · E · (1 / cos (α) -1) (7)

  As described above, the deformation amount ΔLto is sufficiently small with respect to the length Lo and can be regarded as the relationship Lo >> ΔLto. Therefore, the relationship L = Lo + ΔLto can be approximately treated as L≈Lo, and thus L / Lo. ≈1, and the equation (7) is approximated as the equation (5). Therefore, as shown in FIG. 13, even when the tension change ΔT is generated in addition to the external force (wind pressure) on the surface of the substrate P from the direction orthogonal to the surface of the substrate P, regardless of the magnitude of the original tension T. The tension change ΔT can be determined by the angle α of the substrate P between the guide roller GR1 and the guide roller GR2 and the longitudinal elastic coefficient E of the substrate P. As in the formula (5) (or the formula (7)), the larger the angle α, the larger the tension change ΔT. That is, when the pressure of the gas blown onto the substrate P is increased, the angle α is increased. Therefore, the higher the pressure blown onto the substrate P is, the larger the tension change ΔT is, and the tension T acting on the substrate P is increased.

  For example, when the substrate P is shifted in the −Y direction along the width direction of the substrate P, the external force applied to the shift side (−Y direction side) is maximized and the side opposite to the shift side (+ Y). The external force applied to the substrate P is gradually reduced from the −Y direction side to the + Y direction side by making the external force applied to the (direction side) the smallest (the external force includes 0). That is, the pressure of the gas ejected from the nozzle -94 on the most -Y direction side is set to be the highest, the pressure of the gas ejected from the nozzle 94 on the most + Y direction side is minimized (the pressure includes 0), and the -Y direction side. From + to the + Y direction side, the pressure of the gas ejected from the nozzle 94 is gradually reduced to give an inclination (gradient) to the external force applied to the substrate P in the width direction of the substrate P.

  Therefore, the tension T applied to the substrate P increases from the + Y direction side toward the −Y direction side. As a result, a difference (external force difference) occurs in the external force applied in the width direction of the substrate P (on the −Y direction side and the + Y direction side), so that a bending moment M is generated on the substrate P, and the substrate P − It can be shifted to the Y direction side. The larger the difference in external force, the larger the change in the tension applied to the substrate P in the width direction and the larger the bending moment M. Therefore, the position of the substrate P in the width direction shifts in the Y direction as well.

  Further, the external force applied to both ends of the substrate P in the width direction is maximized, the external force applied to the center of the substrate P in the width direction is minimized, and applied to the substrate P from the center in the width direction toward both ends. The external force may be gradually increased. That is, the pressure of the gas ejected from the nozzles 94 on the -Y direction side and the + Y direction side is the highest, the pressure of the gas ejected from the nozzle 94 on the center in the width direction is the lowest (the pressure also includes 0), and the width The pressure of the gas ejected from the nozzle 94 may be gradually increased from the center of the direction toward both ends of the substrate P. Accordingly, the tension on both end sides of the substrate P in the width direction becomes higher than that in the center in the width direction, so that it is possible to suppress wrinkling of the center of the substrate P in the width direction.

  In this manner, the external force imparting unit 90 applies an external force that causes the substrate P to bend along the width direction of the substrate P to the substrate P while changing the width in the width direction (Y direction), so that the external force is not in contact with the substrate P. Thus, the distribution of the tension applied to the substrate P in the width direction can be changed. As a result, the position of the substrate P in the width direction can be adjusted precisely and smoothly. Further, it is possible to prevent wrinkles from being formed in the center of the substrate P in the width direction.

[Modification of the Second Embodiment]
The second embodiment may be modified as follows.

  (Modification 1) In the second embodiment, the control unit 18 adjusts the throttle of the nozzle 94 of the external force application unit 90 of the edge position controller EPC to adjust the pressure of the gas ejected from the nozzle 94. However, the pressure of the gas ejected from the plurality of nozzles 94 may be constant. In the first modification, as shown in FIG. 14, the tension distribution adjusting unit 60 further includes a driving unit 96 that moves the external force applying unit 90. The drive unit 96 moves the external force applying unit 90 in the vertical direction (Z direction), and rotates the rotation axis Ax2 so that the external force applying unit 90 can freely tilt with respect to the surface of the substrate P in the width direction of the substrate P. It is something that rotates and moves to the center. The rotation axis Ax2 is provided at the center of the external force applying portion 90 in the width direction. In this way, by moving the external force applying portion 90 in the vertical direction, the external force applied to the substrate P can be changed. Further, by rotating the external force applying unit 90 about the rotation axis Ax2, even if the pressure of the gas ejected from the plurality of nozzles 94 is constant, the external force applied in the width direction of the substrate P is inclined (gradient). ) Can be given. Also in this modification 1, the same effect as that of the second embodiment can be obtained, and the gradient of the external force applied to the substrate P can be made smoother. The drive unit 96 moves the external force applying unit 90 under the control of the control unit 18.

  (Modification 2) The edge position controller EPC described in the second embodiment and the modification 1 thereof further detects the edge of the substrate P similarly to the modification 4 of the first embodiment. The substrate P is wound around the edge detection unit 80 in a state in which a predetermined tension is applied and is movable in the axial direction (S direction) of the rotation shaft 82a, and the rotation movement roller 82 is in the axial direction. A roller driving unit 84 that moves in the (S direction) may be provided (see FIG. 11). The edge detection unit 80 and the rotational movement roller 82 are provided on the upstream side (−X direction side) in the transport direction of the substrate P with respect to the guide roller GR1 (tension distribution adjustment unit 60). When the edge of the substrate P detected by the edge detection unit 80 is deviated from the reference position, the control unit 18 controls the roller driving unit 84 to move the rotational movement roller 82 in the axial direction (S direction). Then, the position of the substrate P in the width direction is adjusted. As a result, the position of the substrate P in the width direction can be roughly and roughly adjusted by the rotational movement roller 82, and then the position of the substrate P in the width direction can be finely adjusted by the tension distribution adjusting unit 60. Therefore, the position adjustment of the substrate P in the width direction can be performed quickly and with high accuracy.

  (Modification 3) The external force imparting unit 90 of the edge position controller EPC described in the second embodiment and Modifications 1 and 2 thereof changes the pressure of the gas blown onto the substrate P (external force for bending the substrate P), The temperature of the gas to be sprayed may be changed in the width direction of the substrate P while being applied while being changed in the width direction of the substrate P. That is, the external force imparting unit 90 in the third modification example changes the temperature in the width direction of the substrate P in a non-contact manner like the temperature adjusting units 62 and 64 described in the first embodiment, so that the substrate P can be changed. It may have a function of adjusting the widthwise distribution of the tension acting on the. Thereby, the temperature of the substrate P can be changed in the width direction while changing the external force for bending the substrate P in the width direction, and the distribution of the tension acting on the substrate P in the width direction can be changed more effectively. it can.

[Third Embodiment]
By using the exposure apparatus EX equipped with the edge position controller EPC described in the first and second embodiments and each modification thereof, a flexible display panel (for example, an organic EL display), a touch panel, a color filter, etc. Various electronic devices can be manufactured. In the third embodiment, a manufacturing process for manufacturing a thin film transistor (TFT), which is a kind of electronic device used for a display panel, will be described with reference to the flowchart of FIG. Although a bottom gate type TFT will be described here as an example, the steps are substantially the same for a top gate type TFT.

  First, the process apparatus PR1 irradiates the surface of the substrate P, which is the base of the display panel, with any one of ultraviolet rays, atmospheric pressure plasma, electron beams, X-rays, etc. to perform activation processing (step S1). Then, the process device PR1 applies the photosensitive functional liquid evenly or selectively to the surface of the substrate P, and passes the substrate P through a drying furnace having a glass transition temperature or lower to form the photosensitive functional layer. A film is formed (step S2). As the photosensitive functional layer, there are a photosensitive silane coupling agent, a photosensitive reducing agent, and the like as described above, and they are properly used depending on the process.

  The substrate P on which the photosensitive functional layer is formed is sent to the exposure device EX, and a pattern for the first layer having a shape corresponding to the gate electrode of the TFT and the wiring associated therewith is exposed (drawn). (Step S3). At this time, the control unit 18 controls the edge position controller EPC based on the position information of the detected alignment marks Ks (Ks1 to Ks3) by the alignment microscope AM (AM1 to AM3), and the width direction of the substrate P. The pattern may be exposed by adjusting the position of the exposure head 16 or by correcting the exposure position of the exposure head 16. The exposure apparatus EX may form the alignment mark Ks on the substrate P by exposing the mark pattern to be the alignment mark Ks when exposing (drawing) the pattern for the first layer. In this case, since the alignment mark Ks is formed during exposure, the alignment mark Ks is not detected by the alignment microscope AM.

  The substrate P exposed by the exposure apparatus EX in this manner is sent to the process apparatus PR2 and the next step is performed. However, depending on the type of the photosensitive functional layer formed in step S2, steps S4A and S5A are performed. Either the process or the process of steps S4B and S5B is performed.

  When a photosensitive silane coupling agent whose lyophobic property is modified is used as the photosensitive functional layer, the portion of the substrate P corresponding to the gate electrode exposed to ultraviolet rays and the wiring associated therewith is repellant. Since the lyophilic property is modified, the process proceeds to step S4A. In step S4A, the process device PR2 forms a pattern (gate electrode and its accompanying wiring) by selectively applying (patterning) conductive ink on the lyophilic portion (exposed portion). To do. The selective application of the conductive ink may be an inkjet method, gravure printing, offset printing, or the like. In addition, as the conductive ink, for example, an ink containing conductive nanoparticles such as silver or copper is used. The pattern layer of the gate electrode and the wiring formed of this conductive ink is called the first layer.

  Then, the process device PR2 anneals to the substrate P in order to strengthen the electrical coupling between the nanoparticles contained in the conductive ink selectively applied to the substrate P and remove the solvent of the conductive ink. Processing and drying processing are performed (step S5A). A method of irradiating the substrate P with high-intensity pulsed light from a strobe lamp may be adopted as the annealing treatment for strengthening the electrical coupling between the nanoparticles.

  On the other hand, when a photosensitive reducing agent that exposes a plating reducing group to a portion that receives ultraviolet rays is used as the photosensitive functional layer, it corresponds to the gate electrode exposed to ultraviolet rays on the substrate P and the wiring associated therewith. Since the plating reducing group is exposed at the exposed portion, the process proceeds to step S4B. In step S4B, the process device PR2 performs electroless plating on the substrate P. Specifically, in the process device PR2, the substrate P is immersed in a plating solution containing palladium ions or the like for a certain period of time, and a pattern of palladium serving as a gate electrode or a wiring is exposed in a portion where the plating reducing group is exposed (exposed portion). ) Is deposited on top. In this plating process, the pattern layer of palladium is used as a base, and a plating process with another metal (gold, copper, etc.) is further applied thereon. The pattern layer of the gate electrodes and wirings deposited by this palladium is called the first layer. This first layer also includes a layer that is further plated if a patterned layer of palladium is used as a base.

  Then, the process apparatus PR2 cleans the plated substrate P with pure water, sends it to a drying furnace having a glass transition temperature or lower, and dries it until the moisture content of the substrate P becomes a predetermined value or lower. (Step S5B).

  After step S5A or step S5B, it is determined whether or not the second layer is formed (step S6). When the pattern layer (here, the gate electrode and the wiring accompanying it) which is the first layer is formed, it is determined in step S6 that the second layer is formed. In the actual process, when the first layer is formed, it is sent to the second layer forming process, and thus there is no determination process of step S6.

  Here, when the process of step S5A or step S5B is completed, the substrate P is wound by the recovery roll, and the wound recovery roll is mounted as a supply roll in another device manufacturing system. This other device manufacturing system has a roll-to-roll system structure and includes an insulating layer film forming device, a process device PR1, an exposure device EX, a process device PR2, and a semiconductor layer forming device (not shown). . The process apparatus PR1, the exposure apparatus EX, and the process apparatus PR2 of another device manufacturing system have substantially the same configurations as the process apparatus PR1, the exposure apparatus EX, and the process apparatus PR2 of the device manufacturing system 10. The supply roll mounted in another device manufacturing system supplies the substrate P to the insulating layer film forming apparatus, and the subsequent steps are performed. It should be noted that the substrate P that has undergone the process of step S5A or step S5B may be continuously subjected to the processes of the following processes without being wound by the recovery roll.

  When it is determined in step S6 that the second layer is to be formed, the insulating layer forming apparatus uses the pattern of the first layer (gate electrode and wiring associated therewith) as a reference to form the gate insulating layer to be stacked thereon. By selectively applying (patterning) a solution (insulating solution), a pattern to be a gate insulating layer is formed (step S7). In the step of forming the gate insulating layer, the insulating solution is selectively applied by using a printing method using a plate, an inkjet method, or the like. Therefore, in step S7, the substrate P is dried at a temperature not higher than the glass transition temperature after the solution application. Then, a treatment of evaporating the solvent component to cure the solvent component is also performed. This formed gate insulating layer is called a second layer.

  Then, in the substrate P on which the pattern of the insulating layer which is the second layer is formed, the photosensitive functional layer is formed on the second layer by the process device PR1 as in step S2. Then, similarly to step S3, the exposure device EX exposes (draws) a pattern for the third layer having a shape corresponding to the source electrode and the drain electrode of the TFT and the wiring associated therewith. At this time, the pattern for the third layer needs to be precisely aligned with the pattern of the first layer (gate electrode and wiring). Therefore, based on the position information of the alignment marks Ks (Ks1 to Ks3) detected by the alignment microscope AM (AM1 to AM3), the control unit 18 uses the edge using the change in the temperature distribution or the change in the wind pressure distribution described above. The position controller EPC is controlled to precisely adjust the position of the substrate P in the width direction, and the exposure position by the exposure head 16 is corrected to expose the pattern for the third layer. As a result, the pattern for the third layer (source electrode and drain electrode and wiring associated therewith) and the formed pattern for the first layer (gate electrode and wiring associated therewith) can be precisely aligned.

  Next, in the case where a photosensitive silane coupling agent is used as the photosensitive functional layer, the process apparatus PR2 conducts electrical conduction on the lyophilic portion (exposed portion) as in steps S4A and S5A. The selective ink is applied to form a pattern (a source electrode and a drain electrode and wirings associated therewith), and then an annealing process and a drying process are performed. On the other hand, when a photosensitive reducing agent is used as the photosensitive functional layer, a pattern of palladium is formed on the exposed portion of the plating reducing group (exposed portion) by the process device PR2 as in steps S4B and S5B. (Source electrode and drain electrode and wiring associated therewith) are deposited, and then a drying process is performed. The pattern layer of the source electrode and the drain electrode and the wiring associated therewith is called the third layer.

  When it is determined in step S6 that the second layer is not formed, the process proceeds to step S8. In step S8, the semiconductor layer forming apparatus forms a pattern to be the semiconductor layer of the TFT between the channel lengths of the source electrode and the drain electrode. This semiconductor layer is formed by a method suitable for a semiconductor material (eg, organic semiconductor, oxide semiconductor, carbon nanotube, etc.). In the step of forming the semiconductor layer, the semiconductor material is selectively applied using a printing method using a plate, an inkjet method, or the like. Therefore, the semiconductor layer forming apparatus uses an annealing treatment for orienting the crystal of the applied semiconductor material. (For example, thermal annealing, optical annealing, electromagnetic wave annealing, etc.) are also performed. The formed semiconductor layer is called the fourth layer.

  As described above, when the patterns of the first layer to the fourth layer are stacked on the substrate P, the element functioning as the TFT is completed. However, in an organic EL display or the like, the organic EL layer is formed on the fourth layer. Since the light emitting layer is further laminated, the process proceeds to the next step, and the light emitting layer is formed after the insulating layer having a uniform thickness is formed on the entire surface of the substrate P.

  In addition, in each of the above-described embodiments and each modification, the raster-scan type exposure apparatus (pattern drawing apparatus) EX is used, but it is disclosed in Patent Document 1 or International Publication No. 2013/146184 pamphlet. The exposure apparatus may be a maskless exposure apparatus that exposes a predetermined pattern using a digital micromirror device (DMD).

  As described above, when a precise patterning device (exposure device EX, inkjet printing device, etc.) is used to form an electronic device on the flexible substrate P, the width direction of the substrate P loaded in the patterning device is measured. It is desirable that the position is positioned with a precision that matches patterning accuracy (resolution) and overlay accuracy. According to each of the above-described embodiments, a precise pattern for an electronic device can be formed on the substrate P by performing the following steps.

  When the patterning device forms a pattern for an electronic device on the surface of the substrate P while transporting the long flexible substrate P in the longitudinal direction, it intersects with the longitudinal direction of the substrate P carried into the patterning device. The step of measuring the positional error in the width direction and the inclination error of the substrate P in the transport direction and the step of arranging the substrate P at two positions apart from each other on the transport path of the substrate P on the upstream side of the patterning device to apply a predetermined tension in the longitudinal direction The distribution of the tension (internal stress) acting on the substrate P in the width direction between the pair of guide members (rollers) that bends the conveyance path of the substrate P in the actuated state is based on the measured position error and tilt error. And a step of adjusting the substrate P in a non-contact state or a low friction state. The position error in the width direction of the substrate P and the tilt error in the transport direction of the substrate P can be measured by detecting the alignment mark Ks.

  In each of the above-described embodiments, the pair of guide members (guide rollers GR1 and GR2) is configured to bend the conveyance path of the sheet substrate P. However, among the pair of guide members, the conveyance path of the sheet substrate P is used. The upper guide member (GR1) located on the upstream side is a nip type roller that sandwiches the sheet substrate P, and the guide member (GR2) located on the downstream side is a rotating roller that bends the conveyance path by contacting the sheet substrate P on the outer peripheral surface. However, at the nip type roller, the sheet substrate P may be configured to pass straight through without being bent. Therefore, the bending of the transport path of the substrate P by the pair of guide members (guide rollers GR1, GR2) is performed twice by both of the pair of guide members (guide rollers GR1, GR2) and once by either one. It is possible to appropriately select the configuration that is performed only.

10 ... Device manufacturing system 12 ... Conveying device 14 ... Light source device 16 ... Exposure head 18 ... Control unit 20 ... Rotating drum 60 ... Tension distribution adjusting unit 62, 64 ... Temperature adjusting unit 66, 66A ... Heating element 68, 96 ... Driving unit 70 ... Temperature control roller 90 ... External force applying section 92 ... Gas supply section 94 ... Nozzle AM, AM1 to AM3 ... Alignment microscope DR1, DR2, R1, R2 ... Driving roller EPC ... Edge position controller EX ... Exposure apparatus GR1, GR2 ... Guide Rollers Ks, Ks1 to Ks3 ... Alignment marks L, L1 to L5 ... Scanning line P ... Substrate PR1, PR2 ... Process device U, U1 to U5 ... Scanning unit

Claims (6)

A pattern forming device for forming a pattern on the sheet substrate by a patterning device while conveying a long flexible sheet substrate in a longitudinal direction,
The sheet substrate has a rotation axis extending in a short direction intersecting the long direction and an outer peripheral surface, and a part of the long direction of the sheet substrate on which the pattern is formed by the patterning device is the outer peripheral surface. A rotating drum that rotates around the rotating shaft and conveys the sheet substrate in the longitudinal direction while supporting the same,
A state in which a rotary shaft that is set in parallel with the rotary shaft of the rotary drum is disposed on the upstream side of the rotary drum in the transport direction of the sheet substrate, and a predetermined tension is applied in the longitudinal direction. A first guide roller that bends the sheet substrate conveyance path by
A rotary shaft that is set parallel to the rotary shaft of the rotary drum, is disposed between the rotary drum and the first guide roller in the transport direction of the sheet substrate, and has a predetermined tension in the longitudinal direction. A second guide roller that bends the sheet substrate transport path in a state where
The sheet substrate is interposed between the first guide roller and the second guide roller in order to correct the inclination in the transport direction of the entire sheet substrate from the second guide roller toward the rotating drum or the position in the short direction. Tension for adjusting the distribution of the tension in the long direction acting on the sheet in the short direction in a non-contact or low friction state with the sheet substrate in the conveyance path between the first guide roller and the second guide roller. Distribution adjustment section,
An edge detector arranged upstream of the first guide roller with respect to the sheet substrate transport direction and configured to detect a positional deviation of an edge of the sheet substrate with respect to the short direction;
A moving roller which is arranged on the upstream side of the first guide roller and which is capable of moving the sheet substrate in the lengthwise direction and moving in the direction of the rotation axis;
Equipped with
According to the positional deviation detected by the edge detection unit, the moving roller is moved in the direction of the rotation axis to roughly adjust the position of the sheet substrate in the short direction, and then by the tension distribution adjustment unit. A pattern forming apparatus for finely adjusting the position of the sheet substrate in the short direction . The pattern forming apparatus according to claim 1, wherein
The sheet substrate is provided with a plurality of reference marks arranged at predetermined intervals along the long direction on both sides of the short direction,
In the patterning device, a detection region is set on an upstream side with respect to a region in the longitudinal direction in which the pattern is formed, of a portion of the sheet substrate supported by the outer peripheral surface of the rotary drum, Has a plurality of mark detection system to detect the reference mark photoelectrically ,
The tension distribution adjusting unit adjusts the distribution of the tension in the long direction acting on the sheet substrate in the short direction based on the position change of the reference mark detected by each of the plurality of mark detection systems. , Pattern forming device. The pattern forming apparatus according to claim 2 , wherein
The tension distribution adjusting unit blows gas onto the surface of the sheet substrate conveyed from the first guide roller toward the second guide roller with a predetermined tension to bend the sheet substrate in the longitudinal direction. A pattern forming apparatus, which is an external force applying unit for applying an external force, and which makes the magnitude of the external force different in the short direction of the sheet substrate. The pattern forming apparatus according to claim 3 ,
The external force applying unit, the arranged along the short direction of the sheet substrate, Bei example a plurality of nozzles for blowing the gas toward the surface of the sheet substrate,
A pattern forming apparatus that individually controls the pressure of gas ejected from each of the plurality of nozzles to adjust the distribution of the tension applied in the long direction of the sheet substrate in the short direction . The pattern forming apparatus according to claim 3 ,
The external force imparting unit generates a bending moment in the short direction in the sheet substrate between the first guide roller and the second guide roller, and shifts the position of the sheet substrate along the short direction. Therefore, the external force applied to the shift side of the sheet substrate is larger than the external force applied to the side opposite to the shift side, so that the pressure of the gas blown to the sheet substrate has a gradient in the short direction. A pattern forming device to have. A pattern forming apparatus according to any one of claims 1 to 5
The patterning device is an exposure device that uses a mask corresponding to the pattern formed on the sheet substrate, a maskless exposure device that uses a micromirror device, and a pattern drawing device that draws the pattern by scanning spot light. A pattern forming apparatus, which is one of an apparatus and an inkjet printing apparatus.

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