JP6670941B2 - 真空堆積処理で使用される基板を保持するための装置、基板上に層を堆積するためのシステム、及び基板を保持するための方法 - Google Patents
真空堆積処理で使用される基板を保持するための装置、基板上に層を堆積するためのシステム、及び基板を保持するための方法 Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67709—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations using magnetic elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
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- Metallurgy (AREA)
- Organic Chemistry (AREA)
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- Physical Vapour Deposition (AREA)
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Description
Claims (12)
- 真空堆積処理において使用される基板又はマスクを保持するための装置であって、
1つ又は複数の第1の電極及び1つ又は複数の第2の電極、
前記1つ又は複数の第1の電極に接続された第1の電力アセンブリ、並びに
前記1つ又は複数の第2の電極に接続され、且つ、前記第1の電力アセンブリのために1つ又は複数の冗長な部品を提供する第2の電力アセンブリ
を備え、
前記1つ又は複数の冗長な部品が、電源、高電圧発生器、及びコントローラからなる群から選択され、
前記装置が、基板及びマスクのうちの少なくとも1つを、摩擦力を用いて支持面で実質的に垂直な配向に保持するのに十分な引力を与えるようにさらに構成されている、装置。 - 前記第1の電力アセンブリが、第1の電源、第1の高電圧発生器、及び第1のコントローラのうちの少なくとも1つを含み、前記第2の電力アセンブリが、第2の電源、第2の高電圧発生器、及び第2のコントローラのうちの少なくとも1つを含み、前記第2の電源、前記第2の高電圧発生器、及び前記第2のコントローラのうちの前記少なくとも1つが、前記第1の電源、前記第1の高電圧発生器、及び前記第1のコントローラのうちの不良品の代わりになるように構成されている、請求項1に記載の装置。
- 真空堆積処理において使用される基板又はマスクを保持するための装置であって、
第1の電力アセンブリに接続可能な1つ又は複数の第1の電極及び1つ又は複数の第2の電極、並びに
前記1つ又は複数の第1の電極と前記1つ又は複数の第2の電極との間に配置され、且つ、第2の電力アセンブリに接続可能な1つ又は複数の第3の電極
を備え、前記装置が、基板及びマスクのうちの少なくとも1つを、摩擦力を用いて支持面で実質的に垂直な配向に保持するのに十分な引力を与えるようにさらに構成されている、装置。 - 前記第2の電力アセンブリに接続可能な1つ又は複数の第4の電極をさらに含み、前記1つ又は複数の第2の電極が、前記1つ又は複数の第3の電極と前記1つ又は複数の第4の電極との間に配置されている、請求項3に記載の装置。
- 前記第2の電力アセンブリが、前記第1の電力アセンブリのための1つ又は複数の冗長な部品を提供し、
前記1つ又は複数の冗長な部品が、電源、高電圧発生器、及びコントローラからなる群から選択される、請求項3又は4に記載の装置。 - 接地と、前記1つ又は複数の第1の電極及び前記1つ又は複数の第2の電極のうちの少なくとも1つとに接続された少なくとも1つのスイッチをさらに備えている、請求項1又は3に記載の装置。
- 接地と、前記1つ又は複数の第1の電極、前記1つ又は複数の第2の電極、及び前記1つ又は複数の第3の電極のうちの少なくとも1つとに接続された少なくとも1つのスイッチをさらに備えている、請求項3又は4に記載の装置。
- 前記第1の電力アセンブリ及び前記第2の電力アセンブリが、電源、高電圧発生器、及びコントローラからなる群から選択された1つ又は複数の部品を共有し、前記1つ又は複数の冗長な部品が、非共有部品である、請求項1又は5に記載の装置。
- 真空堆積処理において使用される基板又はマスクを保持するための装置であって、
1つ又は複数の第1の電極を有する第1の電極アレンジメント、
1つ又は複数の第2の電極を有する第2の電極アレンジメント、並びに
前記1つ又は複数の第1の電極及び前記1つ又は複数の第2の電極のうちの少なくとも1つの電極に欠陥があるときに、前記少なくとも1つの電極を接地するように構成されたコントローラ
を備え、前記装置が、基板及びマスクのうちの少なくとも1つを、摩擦力を用いて支持面で実質的に垂直な配向に保持するのに十分な引力を与えるようにさらに構成されている装置。 - 前記第1の電力アセンブリと前記第2の電力アセンブリとが、互いから独立している、請求項1、3、又は9記載の装置。
- 基板上に層を堆積するためのシステムであって、
真空チャンバ、
前記真空チャンバ内の1つ又は複数の堆積材料源、及び
前記真空チャンバ内の請求項1、3、又は9のいずれか一項に記載の装置
を含むシステム。 - 基板又はマスクを保持するための方法であって、
第1の電圧を1つ又は複数の第1の電極及び1つ又は複数の第2の電極に印加することと、
第2の電圧を前記1つ又は複数の第1の電極と前記1つ又は複数の第2の電極との間に配置された1つ又は複数の第3の電極に印加することと、
前記1つ又は複数の第1の電極、前記1つ又は複数の第2の電極、及び前記1つ又は複数の第3の電極のうちの少なくとも1つの電極を接地に接続することと
を含み、基板及びマスクのうちの少なくとも1つを、摩擦力を用いて支持面で実質的に垂直な配向に保持するのに十分な引力を与えるようにさらに構成されている、
方法。
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PCT/EP2017/066979 WO2019007515A1 (en) | 2017-07-06 | 2017-07-06 | APPARATUS AND METHOD FOR RETAINING A SUBSTRATE |
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JP2019523818A JP2019523818A (ja) | 2019-08-29 |
JP6670941B2 true JP6670941B2 (ja) | 2020-03-25 |
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JP (1) | JP6670941B2 (ja) |
KR (1) | KR20190087969A (ja) |
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WO2022146667A1 (en) | 2020-12-29 | 2022-07-07 | Mattson Technology, Inc. | Electrostatic chuck assembly for plasma processing apparatus |
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JPH077071A (ja) * | 1993-06-15 | 1995-01-10 | Hitachi Ltd | 静電チャック |
JP2005285825A (ja) * | 2004-03-26 | 2005-10-13 | Advantest Corp | 静電チャック及び静電チャックによる基板固定方法 |
JP2007165837A (ja) * | 2005-11-17 | 2007-06-28 | E-Beam Corp | 基板処理装置及び基板処理方法 |
TW200721244A (en) * | 2005-11-17 | 2007-06-01 | Beam Corp E | Substrate treatment apparatus and substrate treatment method |
CN103066000B (zh) * | 2011-10-19 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | 晶圆承载设备及晶圆承载的方法 |
JP5975755B2 (ja) * | 2012-06-28 | 2016-08-23 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
US20170047867A1 (en) * | 2015-08-12 | 2017-02-16 | Applied Materials, Inc. | Electrostatic chuck with electrostatic fluid seal for containing backside gas |
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2017
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- 2017-07-06 KR KR1020187018727A patent/KR20190087969A/ko not_active Application Discontinuation
- 2017-07-06 CN CN201780037647.3A patent/CN109477201A/zh active Pending
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