JP6664038B1 - フレキシブル発光デバイス及びその製造方法、並びにフレキシブル照明装置の製造装置 - Google Patents
フレキシブル発光デバイス及びその製造方法、並びにフレキシブル照明装置の製造装置 Download PDFInfo
- Publication number
- JP6664038B1 JP6664038B1 JP2019563315A JP2019563315A JP6664038B1 JP 6664038 B1 JP6664038 B1 JP 6664038B1 JP 2019563315 A JP2019563315 A JP 2019563315A JP 2019563315 A JP2019563315 A JP 2019563315A JP 6664038 B1 JP6664038 B1 JP 6664038B1
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- Prior art keywords
- polishing
- resin film
- liquid material
- flexible
- emitting device
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Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C18/1216—Metal oxides
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
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- C23C18/1229—Composition of the substrate
- C23C18/1233—Organic substrates
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
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- C23C18/1237—Composite substrates, e.g. laminated, premixed
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1254—Sol or sol-gel processing
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
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- H10K77/111—Flexible substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
-
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Abstract
Description
以下、本開示の実施形態を説明する。以下の説明において、必要以上に詳細な説明は省略する場合がある。例えば、既によく知られた事項の詳細説明や実質的に同一の構成に対する重複説明を省略する場合がある。これは、以下の説明が不必要に冗長になるのを避け、当業者の理解を容易にするためである。本発明者らは、当業者が本開示を十分に理解するために添付図面及び以下の説明を提供する。これらによって特許請求の範囲に記載の主題を限定することを意図するものではない。
まず、図5A及び図5Bを参照して、本開示によるフレキシブル発光デバイスの製造装置(以下、単に「研磨平坦化装置」と称する)の概略構成を説明する。図示されている構成は、本開示による研磨平坦化装置の一例に過ぎない。
本開示のフレキシブル発光デバイスの製造方法は、実施形態において、ガラスベース及びガラスベース上の樹脂膜を有するフレキシブル発光デバイス用支持基板を用意する工程と、研磨平坦化装置によって樹脂膜の表面の一部を研磨して前記表面に研磨凹部を形成する工程と、研磨平坦化装置によって樹脂膜の表面における研磨凹部の少なくとも一部を覆う焼結体層を形成する工程とを含む。
図6を参照する。図6は、研磨処理前におけるフレキシブル発光デバイス用支持基板10の一部の断面を示している。支持基板10は、ガラスベース11、ガラスベース11上の樹脂膜12を有している。ガラスベース11は、プロセス用の支持基板であり、その厚さは、例えば0.3〜0.7mm程度であり得る。
まず、研磨平坦化装置500による研磨処理を行うとき、制御装置550は、位置決め装置540により、支持基板10における樹脂膜12の表面12s上に存在するパーティクルなどの研磨対象(ターゲット)に研磨ヘッド535を対向させる。パーティクル30の検出は、例えばイメージセンサによって取得した画像を処理することによって可能である。パーティクル30のサイズは、樹脂膜12の表面12sに平行な方向について、比較的に正確な測定が可能である。具体的には、支持基板10における樹脂膜12の表面12s上に存在するパーティクル30をイメージセンサなどよって検出し、パーティクルの座標を決定する。nを1以上の整数として、除去すべきn個のパーティクルP1、・・・、Pnが検出されたとする。kを1以上n以下の整数とし、k番目のパーティクルPkの平面位置座標を(xk,yk)で表現する場合、制御装置550は、位置決め装置540を駆動して可動ユニット530を移動させ、研磨ヘッド535の下端の平面位置座標を(xk,yk)に整合させる。
次に、図8に示すように、研磨平坦化装置500の可動ユニット530が有するリペアヘッド536のノズル537から、樹脂膜12の表面12sに形成された研磨凹部12cに、液体材料20aを供給して液体材料20aの層によって研磨凹部12cを埋める。液体材料20aの典型例は、アルコキシドを含むゾルである。リペアヘッド536は、インクジェット方式によってノズル537から液体材料20aを噴射することができる。
(R1)mM(OR2)X-m (1)
次に、図12に示すように、研磨凹部に焼結体層20が形成された樹脂膜12上に第1のガスバリア膜13を形成する。第1のガスバリア膜13は、種々の構造を有し得る。第1のガスバリア膜13の例は、シリコン酸化膜またはシリコン窒化膜などの膜である。第1のガスバリア膜13の他の例は、有機材料層及び無機材料層が積層された多層膜であり得る。第1のガスバリア膜13の下面は、平坦性の高い焼結体層20の上面によって規定されている。このため、樹脂膜12の表面12sに存在する研磨凹部及び研磨傷によって第1のガスバリア膜13の封止性能が劣化するという問題を解決することができる。
以下、図13Aから図13Dを主に参照して、TFT及びOLEDなどを含む機能層、並びに第2のガスバリア膜を形成する工程を説明する。
上記の機能層を形成した後、図13Bに示されるように、TFT層200及びOLED層300の全体を第2のガスバリア膜23によって覆う。第2のガスバリア膜23の典型例は、無機材料層と有機材料層とが積層された多層膜である。なお、第2のガスバリア膜23とOLED層300との間に、粘着膜、タッチスクリーンを構成する他の機能層、偏光膜などの要素が配置されていても良い。第2のガスバリア膜23の形成は、薄膜封止(Thin Film Encapsulation:TFE)技術によって行うことができる。封止信頼性の観点から、薄膜封止構造のWVTR(Water Vapor Transmission Rate)は、典型的には1×10-4g/m2/day以下であることが求められている。本開示の実施形態によれば、この基準を達成している。第2のガスバリア膜23の厚さは例えば1.5μm以下である。
図16Aは、本開示の他の実施形態における製造方法を示す工程断面図である。図16Bは、この実施形態におけるフレキシブル発光デバイス(OLEDライトパネル)の断面図である。
Claims (25)
- フレキシブル基板と、
前記フレキシブル基板に支持された発光素子と、
を備え、
前記フレキシブル基板は、
表面を有する樹脂膜であって、前記表面は研磨凹部を有する、樹脂膜と、
前記樹脂膜の前記表面の一部に位置する酸化物層であって、前記研磨凹部の少なくとも一部を覆っている酸化物層と、
を有しており、
前記酸化物層は、金属酸化物かつ焼結体である、フレキシブル発光デバイス。 - 前記フレキシブル発光デバイスはフレキシブル照明装置である、請求項1に記載のフレキシブル発光デバイス。
- 前記研磨凹部は複数の研磨傷を含む、請求項1または2に記載のフレキシブル発光デバイス。
- 前記酸化物層は、前記樹脂膜の前記表面が有する前記研磨凹部よりも平坦な上面を有している、請求項1から3のいずれかに記載のフレキシブル発光デバイス。
- 前記樹脂膜の前記表面及び前記酸化物層を覆い、前記発光素子と前記フレキシブル基板との間に位置している、第1のガスバリア膜と、
前記フレキシブル基板に支持され、前記発光素子を覆う第2のガスバリア膜と、
を備えている、請求項1から4のいずれかに記載のフレキシブル発光デバイス。 - ガラスベースと、
表面を有する樹脂膜であって、前記表面は研磨凹部を有し、前記ガラスベースによって支持された、樹脂膜と、
前記樹脂膜の前記表面の一部に位置し、かつ、前記研磨凹部の少なくとも一部を覆っている酸化物層と、
を有しており、
前記酸化物層は、金属酸化物かつ焼結体である、フレキシブル発光デバイス用支持基板。 - 前記研磨凹部は複数の研磨傷を含む、請求項6に記載のフレキシブル発光デバイス用支持基板。
- 前記酸化物層は、前記樹脂膜の前記表面が有する前記研磨凹部よりも平坦な上面を有している、請求項6または7に記載のフレキシブル発光デバイス用支持基板。
- 前記樹脂膜の前記表面及び前記酸化物層を覆うガスバリア膜を備えている、請求項6から8のいずれかに記載のフレキシブル発光デバイス用支持基板。
- ガラスベース及び前記ガラスベース上の樹脂膜を有するフレキシブル発光デバイス用支持基板を用意する工程と、
前記樹脂膜の前記表面の一部を研磨して前記表面に研磨凹部を形成する工程と、
前記樹脂膜の前記表面における前記研磨凹部の少なくとも一部を覆う焼結体層を形成する工程と、
を含み、
前記焼結体層は、金属酸化物である、フレキシブル発光デバイスの製造方法。 - 前記焼結体層を形成する工程は、
前記樹脂膜の前記表面に形成された前記研磨凹部に液体材料を供給すること、及び、
前記液体材料を加熱することによって前記液体材料から前記焼結体層を形成すること、を含む、請求項10に記載の製造方法。 - 前記液体材料は金属アルコキシドを含むゾルである、請求項11に記載の製造方法。
- 前記焼結体層を形成する工程は、
前記液体材料を350℃以上に加熱することを含む、請求項11または12に記載の製造方法。 - 前記樹脂膜の前記表面を覆う第1のガスバリア膜を形成する工程と、
前記フレキシブル基板に支持される発光素子を形成する工程と、
前記フレキシブル基板に支持され、前記発光素子を覆う第2のガスバリア膜を形成する工程と、
を含む、請求項10から12のいずれかに記載の製造方法。 - ガラスベース及び前記ガラスベース上の樹脂膜を有するフレキシブル発光デバイス用支持基板を支持するステージと、
前記樹脂膜の表面における選択された領域に接近し、前記領域を研磨して前記表面に研磨凹部を形成する研磨ヘッドと、
前記樹脂膜の前記表面に形成された前記研磨凹部に液体材料を供給し、前記液体材料を加熱することによって前記液体材料から焼結体層を形成するリペアヘッドと、
を備え、
前記焼結体層は、金属酸化物である、フレキシブル照明装置の製造装置。 - 前記リペアヘッドは前記液体材料を前記研磨凹部に供給するノズルを有している、請求項15に記載の製造装置。
- 前記研磨ヘッドは、走行する研磨テープを前記樹脂膜に押圧する加圧装置を有しており、
前記加圧装置の先端部分は、前記研磨テープの幅方向に湾曲している部分を含んでいる、請求項15または16に記載の製造装置。 - 前記リペアヘッドは赤外線光源を有している、請求項15から17のいずれかに記載の製造装置。
- 前記赤外線光源による赤外線の照射領域は、前記樹脂膜の前記表面において、直径10mmの円に含まれる大きさを有している、請求項18に記載の製造装置。
- 前記赤外線光源は、レーザ光源であり、
前記赤外線の照射領域は、前記樹脂膜の前記表面において、直径1mmの円に含まれる大きさを有している、請求項19に記載の製造装置。 - 前記研磨ヘッドによって前記研磨凹部が形成され後、前記リペアヘッドは、前記研磨凹部に前記液体材料を供給し、前記液体材料を加熱することによって前記液体材料から前記焼結体層を形成する処理を、前記フレキシブル発光デバイス用支持基板上の異なる位置において繰り返す、請求項15から20のいずれかに記載の製造装置。
- 前記研磨ヘッドは、前記樹脂膜の前記表面における前記研磨凹部に複数の研磨傷を形成する、請求項15から21のいずれかに記載の製造装置。
- 前記焼結体層は、前記樹脂膜の前記表面における前記研磨凹部よりも平坦な上面を有している、請求項15から22のいずれかに記載の製造装置。
- 前記液体材料は金属アルコキシドを含むゾルである、請求項15から23のいずれかに記載の製造装置。
- 前記リペアヘッドは、前記液体材料を350℃以上に加熱する、請求項15から24のいずれかに記載の製造装置。
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- 2018-05-29 US US16/979,510 patent/US20210043876A1/en not_active Abandoned
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WO2015104968A1 (ja) * | 2014-01-10 | 2015-07-16 | Jx日鉱日石エネルギー株式会社 | 光学基板、光学基板の製造に用いられるモールド、及び光学基板を含む発光素子 |
WO2016017645A1 (ja) * | 2014-08-01 | 2016-02-04 | 旭硝子株式会社 | 無機膜付き支持基板およびガラス積層体、ならびに、それらの製造方法および電子デバイスの製造方法 |
JP2016178056A (ja) * | 2015-03-23 | 2016-10-06 | 東洋インキScホールディングス株式会社 | 有機エレクトロルミネッセンス素子、および有機エレクトロルミネッセンス装置 |
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