JP6662790B2 - 光増幅器 - Google Patents

光増幅器 Download PDF

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Publication number
JP6662790B2
JP6662790B2 JP2016564304A JP2016564304A JP6662790B2 JP 6662790 B2 JP6662790 B2 JP 6662790B2 JP 2016564304 A JP2016564304 A JP 2016564304A JP 2016564304 A JP2016564304 A JP 2016564304A JP 6662790 B2 JP6662790 B2 JP 6662790B2
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JP
Japan
Prior art keywords
gain medium
field
optical field
optical
semiconductor disk
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Expired - Fee Related
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JP2016564304A
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English (en)
Japanese (ja)
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JP2017514312A (ja
JP2017514312A5 (enExample
Inventor
ペーター アレクサンダー マルコム，グレーム
ペーター アレクサンダー マルコム，グレーム
ジェームス ハミルトン，クレイグ
ジェームス ハミルトン，クレイグ
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Solus Technologies Ltd
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Solus Technologies Ltd
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Publication date
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H01S5/02484—Sapphire or diamond heat spreaders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/29—Repeaters
    • H04B10/291—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form
    • H04B10/2912—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form characterised by the medium used for amplification or processing
    • H04B10/2914—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form characterised by the medium used for amplification or processing using lumped semiconductor optical amplifiers [SOA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Lasers (AREA)
  • Semiconductor Lasers (AREA)
JP2016564304A 2014-04-28 2015-04-28 光増幅器 Expired - Fee Related JP6662790B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB1407462.9A GB2526063B (en) 2014-04-28 2014-04-28 Optical amplifier
GB1407462.9 2014-04-28
PCT/GB2015/051232 WO2015166229A1 (en) 2014-04-28 2015-04-28 Optical amplifier

Publications (3)

Publication Number Publication Date
JP2017514312A JP2017514312A (ja) 2017-06-01
JP2017514312A5 JP2017514312A5 (enExample) 2018-06-14
JP6662790B2 true JP6662790B2 (ja) 2020-03-11

Family

ID=50972001

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016564304A Expired - Fee Related JP6662790B2 (ja) 2014-04-28 2015-04-28 光増幅器

Country Status (6)

Country Link
US (1) US9966732B2 (enExample)
EP (1) EP3138164A1 (enExample)
JP (1) JP6662790B2 (enExample)
CA (1) CA2944328C (enExample)
GB (1) GB2526063B (enExample)
WO (1) WO2015166229A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11835743B2 (en) 2017-06-02 2023-12-05 Lawrence Livermore National Security, Llc Innovative solutions to improve laser damage thresholds of optical structures
WO2018222504A2 (en) * 2017-06-02 2018-12-06 Lawrence Livermore National Security, Llc Innovative solutions for improving laser damage performance of multi-layer dielectric gratings
US10831082B2 (en) 2018-05-30 2020-11-10 Samsung Electronics Co., Ltd. Apparatus and method for controlling laser light propagation direction by using a plurality of nano-antennas
CN111162453B (zh) * 2020-02-03 2024-09-10 苏州大学 一种半导体六边形微米碟激光器

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0629606A (ja) * 1992-07-08 1994-02-04 Nippon Telegr & Teleph Corp <Ntt> 短パルス半導体光源
US6243407B1 (en) * 1997-03-21 2001-06-05 Novalux, Inc. High power laser devices
US6735234B1 (en) * 2000-02-11 2004-05-11 Giga Tera Ag Passively mode-locked optically pumped semiconductor external-cavity surface-emitting laser
DE10140254A1 (de) * 2001-08-09 2003-03-06 Trumpf Laser Gmbh & Co Kg Laserverstärkersystem
WO2003088435A1 (en) * 2002-04-18 2003-10-23 Mitsubishi Denki Kabushiki Kaisha Laser oscillator and optical amplifier
JP2004179233A (ja) * 2002-11-25 2004-06-24 Nippon Telegr & Teleph Corp <Ntt> 出力制御機能付き半導体光増幅装置
JP2004253800A (ja) * 2003-02-19 2004-09-09 Osram Opto Semiconductors Gmbh レーザーパルス形成用レーザー装置
US20050190810A1 (en) * 2004-02-27 2005-09-01 Stuart Butterworth Contact-bonded optically pumped semiconductor laser structure
US7457033B2 (en) * 2005-05-27 2008-11-25 The Regents Of The University Of California MEMS tunable vertical-cavity semiconductor optical amplifier
US9036253B2 (en) * 2006-10-06 2015-05-19 The Regents Of The University Of California Photonic devices based on vertical-cavity semiconductor optical amplifiers
US20090290606A1 (en) * 2008-05-23 2009-11-26 Chilla Juan L Mode-locked external-cavity surface-emitting semiconductor laser
US20110150013A1 (en) * 2009-12-17 2011-06-23 Coherent, Inc. Resonant pumping of thin-disk laser with an optically pumped external-cavity surface-emitting semiconductor laser
WO2011147799A1 (de) * 2010-05-28 2011-12-01 Daniel Kopf Ultrakurzpuls-mikrochiplaser, halbleiterlaser, lasersystem und pumpverfahren für dünne lasermedien
GB2500676B (en) * 2012-03-29 2015-12-16 Solus Technologies Ltd Self mode-locking semiconductor disk laser (SDL)
WO2013152447A2 (en) 2012-04-11 2013-10-17 Time-Bandwidth Products Ag Pulsed semiconductor laser

Also Published As

Publication number Publication date
EP3138164A1 (en) 2017-03-08
GB2526063A (en) 2015-11-18
US9966732B2 (en) 2018-05-08
JP2017514312A (ja) 2017-06-01
US20170047707A1 (en) 2017-02-16
CA2944328A1 (en) 2015-11-05
CA2944328C (en) 2022-04-12
GB2526063B (en) 2016-10-26
GB201407462D0 (en) 2014-06-11
WO2015166229A1 (en) 2015-11-05

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