CA2944328C - Optical amplifier - Google Patents
Optical amplifier Download PDFInfo
- Publication number
- CA2944328C CA2944328C CA2944328A CA2944328A CA2944328C CA 2944328 C CA2944328 C CA 2944328C CA 2944328 A CA2944328 A CA 2944328A CA 2944328 A CA2944328 A CA 2944328A CA 2944328 C CA2944328 C CA 2944328C
- Authority
- CA
- Canada
- Prior art keywords
- gain medium
- optical field
- input optical
- field
- semiconductor disk
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 227
- 239000004065 semiconductor Substances 0.000 claims abstract description 94
- 238000000034 method Methods 0.000 claims description 15
- 238000005086 pumping Methods 0.000 claims description 6
- 230000003321 amplification Effects 0.000 description 11
- 238000003199 nucleic acid amplification method Methods 0.000 description 11
- 239000013078 crystal Substances 0.000 description 10
- 239000000835 fiber Substances 0.000 description 9
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 230000001172 regenerating effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000009022 nonlinear effect Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/041—Optical pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
- H01S5/02484—Sapphire or diamond heat spreaders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/29—Repeaters
- H04B10/291—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form
- H04B10/2912—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form characterised by the medium used for amplification or processing
- H04B10/2914—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form characterised by the medium used for amplification or processing using lumped semiconductor optical amplifiers [SOA]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Lasers (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1407462.9A GB2526063B (en) | 2014-04-28 | 2014-04-28 | Optical amplifier |
| GB1407462.9 | 2014-04-28 | ||
| PCT/GB2015/051232 WO2015166229A1 (en) | 2014-04-28 | 2015-04-28 | Optical amplifier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2944328A1 CA2944328A1 (en) | 2015-11-05 |
| CA2944328C true CA2944328C (en) | 2022-04-12 |
Family
ID=50972001
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA2944328A Active CA2944328C (en) | 2014-04-28 | 2015-04-28 | Optical amplifier |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9966732B2 (enExample) |
| EP (1) | EP3138164A1 (enExample) |
| JP (1) | JP6662790B2 (enExample) |
| CA (1) | CA2944328C (enExample) |
| GB (1) | GB2526063B (enExample) |
| WO (1) | WO2015166229A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11835743B2 (en) | 2017-06-02 | 2023-12-05 | Lawrence Livermore National Security, Llc | Innovative solutions to improve laser damage thresholds of optical structures |
| WO2018222504A2 (en) * | 2017-06-02 | 2018-12-06 | Lawrence Livermore National Security, Llc | Innovative solutions for improving laser damage performance of multi-layer dielectric gratings |
| US10831082B2 (en) | 2018-05-30 | 2020-11-10 | Samsung Electronics Co., Ltd. | Apparatus and method for controlling laser light propagation direction by using a plurality of nano-antennas |
| CN111162453B (zh) * | 2020-02-03 | 2024-09-10 | 苏州大学 | 一种半导体六边形微米碟激光器 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0629606A (ja) * | 1992-07-08 | 1994-02-04 | Nippon Telegr & Teleph Corp <Ntt> | 短パルス半導体光源 |
| US6243407B1 (en) * | 1997-03-21 | 2001-06-05 | Novalux, Inc. | High power laser devices |
| US6735234B1 (en) * | 2000-02-11 | 2004-05-11 | Giga Tera Ag | Passively mode-locked optically pumped semiconductor external-cavity surface-emitting laser |
| DE10140254A1 (de) * | 2001-08-09 | 2003-03-06 | Trumpf Laser Gmbh & Co Kg | Laserverstärkersystem |
| WO2003088435A1 (en) * | 2002-04-18 | 2003-10-23 | Mitsubishi Denki Kabushiki Kaisha | Laser oscillator and optical amplifier |
| JP2004179233A (ja) * | 2002-11-25 | 2004-06-24 | Nippon Telegr & Teleph Corp <Ntt> | 出力制御機能付き半導体光増幅装置 |
| JP2004253800A (ja) * | 2003-02-19 | 2004-09-09 | Osram Opto Semiconductors Gmbh | レーザーパルス形成用レーザー装置 |
| US20050190810A1 (en) * | 2004-02-27 | 2005-09-01 | Stuart Butterworth | Contact-bonded optically pumped semiconductor laser structure |
| US7457033B2 (en) * | 2005-05-27 | 2008-11-25 | The Regents Of The University Of California | MEMS tunable vertical-cavity semiconductor optical amplifier |
| US9036253B2 (en) * | 2006-10-06 | 2015-05-19 | The Regents Of The University Of California | Photonic devices based on vertical-cavity semiconductor optical amplifiers |
| US20090290606A1 (en) * | 2008-05-23 | 2009-11-26 | Chilla Juan L | Mode-locked external-cavity surface-emitting semiconductor laser |
| US20110150013A1 (en) * | 2009-12-17 | 2011-06-23 | Coherent, Inc. | Resonant pumping of thin-disk laser with an optically pumped external-cavity surface-emitting semiconductor laser |
| WO2011147799A1 (de) * | 2010-05-28 | 2011-12-01 | Daniel Kopf | Ultrakurzpuls-mikrochiplaser, halbleiterlaser, lasersystem und pumpverfahren für dünne lasermedien |
| GB2500676B (en) * | 2012-03-29 | 2015-12-16 | Solus Technologies Ltd | Self mode-locking semiconductor disk laser (SDL) |
| WO2013152447A2 (en) | 2012-04-11 | 2013-10-17 | Time-Bandwidth Products Ag | Pulsed semiconductor laser |
-
2014
- 2014-04-28 GB GB1407462.9A patent/GB2526063B/en not_active Expired - Fee Related
-
2015
- 2015-04-28 US US15/306,820 patent/US9966732B2/en active Active
- 2015-04-28 EP EP15725848.4A patent/EP3138164A1/en not_active Withdrawn
- 2015-04-28 WO PCT/GB2015/051232 patent/WO2015166229A1/en not_active Ceased
- 2015-04-28 JP JP2016564304A patent/JP6662790B2/ja not_active Expired - Fee Related
- 2015-04-28 CA CA2944328A patent/CA2944328C/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP3138164A1 (en) | 2017-03-08 |
| GB2526063A (en) | 2015-11-18 |
| JP6662790B2 (ja) | 2020-03-11 |
| US9966732B2 (en) | 2018-05-08 |
| JP2017514312A (ja) | 2017-06-01 |
| US20170047707A1 (en) | 2017-02-16 |
| CA2944328A1 (en) | 2015-11-05 |
| GB2526063B (en) | 2016-10-26 |
| GB201407462D0 (en) | 2014-06-11 |
| WO2015166229A1 (en) | 2015-11-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request |
Effective date: 20200427 |