JP6661664B2 - 太陽電池モジュール - Google Patents
太陽電池モジュール Download PDFInfo
- Publication number
- JP6661664B2 JP6661664B2 JP2017560384A JP2017560384A JP6661664B2 JP 6661664 B2 JP6661664 B2 JP 6661664B2 JP 2017560384 A JP2017560384 A JP 2017560384A JP 2017560384 A JP2017560384 A JP 2017560384A JP 6661664 B2 JP6661664 B2 JP 6661664B2
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- light
- solar cell
- surface side
- cell module
- photoelectric conversion
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- 238000006243 chemical reaction Methods 0.000 claims description 74
- 239000000758 substrate Substances 0.000 claims description 39
- 239000010409 thin film Substances 0.000 claims description 34
- 206010052128 Glare Diseases 0.000 claims description 18
- 238000002834 transmittance Methods 0.000 claims description 17
- 239000010408 film Substances 0.000 claims description 13
- 229920005989 resin Polymers 0.000 claims description 12
- 239000011347 resin Substances 0.000 claims description 12
- 238000007789 sealing Methods 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 6
- 238000000926 separation method Methods 0.000 description 15
- 239000003086 colorant Substances 0.000 description 14
- 238000010248 power generation Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 230000010354 integration Effects 0.000 description 8
- 238000013461 design Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000000049 pigment Substances 0.000 description 3
- -1 ITO Chemical class 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000001579 optical reflectometry Methods 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000012943 hotmelt Substances 0.000 description 1
- 239000000976 ink Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001709 polysilazane Polymers 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Description
Claims (8)
- 受光面側から、第一電極、光電変換ユニットおよび第二電極が積層された薄膜光電変換素子;前記薄膜光電変換素子よりも裏面側に配置された封止樹脂層、裏面側透明基板、およびカラー層を備え、
前記薄膜光電変換素子は、複数の透光性開口が設けられ、かつ透光性開口の面積率が5〜50%である光透過領域を有し、
前記光透過領域における光透過率が5%未満であり、
前記薄膜光電変換素子と前記裏面側透明基板との間に前記封止樹脂層が配置され、
前記裏面側透明基板の裏面側に前記カラー層が配置されている、太陽電池モジュール。 - 前記裏面側透明基板がガラス板である、請求項1に記載の太陽電池モジュール。
- 前記薄膜光電変換素子の受光面側に受光面側透明基板を備える、請求項1または2に記載の太陽電池モジュール。
- 前記受光面側透明基板は、受光面側に防眩処理が施されている、請求項3に記載の太陽電池モジュール。
- 前記受光面側透明基板は、受光面側表面に防眩膜が設けられることにより、前記防眩処理が施されている、請求項4に記載の太陽電池モジュール。
- 前記受光面側透明基板は、基板自体の表面に凹凸が形成されることにより、前記防眩処理が施されている、請求項4に記載の太陽電池モジュール。
- 前記カラー層の光透過率が10%以下である、請求項1〜6のいずれか1項に記載の太陽電池モジュール。
- 受光面側から入射する可視光の裏面側への採光性を有していない、請求項1〜7のいずれか1項に記載の太陽電池モジュール。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016003066 | 2016-01-08 | ||
JP2016003066 | 2016-01-08 | ||
PCT/JP2017/000024 WO2017119413A1 (ja) | 2016-01-08 | 2017-01-04 | 太陽電池モジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2017119413A1 JPWO2017119413A1 (ja) | 2018-09-13 |
JP6661664B2 true JP6661664B2 (ja) | 2020-03-11 |
Family
ID=59274214
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017560384A Active JP6661664B2 (ja) | 2016-01-08 | 2017-01-04 | 太陽電池モジュール |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP6661664B2 (ja) |
WO (1) | WO2017119413A1 (ja) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2911272B2 (ja) * | 1991-09-10 | 1999-06-23 | 三洋電機株式会社 | アモルファスシリコン太陽電池とその製造方法 |
JP3717369B2 (ja) * | 2000-04-21 | 2005-11-16 | シャープ株式会社 | 太陽電池モジュール及びその製造方法 |
JP3717372B2 (ja) * | 2000-05-15 | 2005-11-16 | シャープ株式会社 | 太陽電池モジュール |
JP4339238B2 (ja) * | 2004-12-16 | 2009-10-07 | シャープ株式会社 | シースルー型光電変換装置およびそれを用いた建材 |
TW201316537A (zh) * | 2011-10-04 | 2013-04-16 | Axuntek Solar Energy | 用來製造穿透式太陽能電池模組的方法 |
JP2014165389A (ja) * | 2013-02-26 | 2014-09-08 | Kaneka Corp | 光透過型太陽電池モジュール |
-
2017
- 2017-01-04 WO PCT/JP2017/000024 patent/WO2017119413A1/ja active Application Filing
- 2017-01-04 JP JP2017560384A patent/JP6661664B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JPWO2017119413A1 (ja) | 2018-09-13 |
WO2017119413A1 (ja) | 2017-07-13 |
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