JP6643755B2 - Deep ultraviolet light emitting module - Google Patents

Description

  The present invention relates to a light emitting module including a semiconductor light emitting element that emits deep ultraviolet light.

  2. Description of the Related Art Conventionally, a light emitting module in which a semiconductor light emitting element that emits infrared light or blue light is sealed with a cured resin is known (see Patent Document 1). Also, a semiconductor light emitting device that emits deep ultraviolet light is known (see Patent Document 2).

JP-A-2002-217459 WO 2015/016150

  However, when a semiconductor light emitting element that emits deep ultraviolet light is sealed with a resin having a high transmittance for infrared light and blue light, the intensity of the deep ultraviolet light output from the light emitting module increases with the elapse of the light emission time. Declines rapidly. Therefore, there has been a problem that the reliability of a light emitting module including a semiconductor light emitting element that emits deep ultraviolet light is extremely low. This remarkable decrease in the reliability of the light emitting module is a particular problem associated with the fact that the light emitted from the semiconductor light emitting device is deep ultraviolet light.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a highly reliable light emitting module including a semiconductor light emitting element that emits deep ultraviolet light.

  The deep ultraviolet light emitting module of the present invention includes a semiconductor light emitting device that emits deep ultraviolet light, a liquid that seals the semiconductor light emitting device, and a package that contains the semiconductor light emitting device and the liquid. The liquid is transparent to deep ultraviolet light emitted from the semiconductor light emitting device. The package has a transparent member transparent to deep ultraviolet light emitted from the semiconductor light emitting device.

  According to the light emitting module of the present invention, a highly reliable light emitting module including a semiconductor light emitting element that emits deep ultraviolet light can be provided.

FIG. 2 is a schematic cross-sectional view of the light emitting module according to Embodiment 1. (A) is a figure which shows the flowchart of the manufacturing method of the light emitting module which concerns on Embodiment 1. FIG. 2B is a view illustrating a flowchart of a step of preparing a semiconductor light-emitting element included in the light-emitting module according to Embodiment 1. FIG. 2A is a schematic partial cross-sectional view showing a step in a method for manufacturing the light-emitting module according to Embodiment 1. FIG. 2B is a schematic partial cross-sectional view showing a step subsequent to FIG. 1A in the method for manufacturing the light emitting module according to Embodiment 1. (C) is a schematic fragmentary sectional view showing a step following (B) in the method for manufacturing a light emitting module according to Embodiment 1. (A) is a diagram showing a change rate of the light output with respect to the operation time of the light emitting module according to Embodiment 1 and the light emitting module of the comparative example. (B) is a diagram showing a change in light output with respect to the magnitude of the supply current of the light emitting module according to Embodiment 1 and the light emitting module of the comparative example. FIG. 9 is a schematic sectional view of a light emitting module according to Embodiment 2. (A) is a figure which shows the flowchart of the manufacturing method of the semiconductor light emitting element with which the light emitting module which concerns on Embodiment 2 is provided. (B) is a diagram showing a flowchart of a step of forming a concave-convex structure on a semiconductor light-emitting element included in the light-emitting module according to Embodiment 2. (A) is a figure showing the section SEM image of the concavo-convex structure with which the light emitting module concerning Embodiment 2 is provided. (B) is a partially enlarged view of a cross-sectional SEM image of the concave-convex structure provided in the light-emitting module according to Embodiment 2. (C) is another partial enlarged view of the cross-sectional SEM image of the concavo-convex structure provided in the light emitting module according to Embodiment 2. FIG. 9 is a schematic sectional view of a light emitting module according to Embodiment 3. FIG. 14 is a schematic sectional view of a light emitting module according to Embodiment 4. FIG. 14 is a schematic sectional view of a light emitting module according to Embodiment 5. FIG. 14 is a schematic sectional view of a light emitting module according to Embodiment 6. FIG. 14 is a schematic sectional view of a light emitting module according to Embodiment 7. FIG. 15 is a schematic sectional view of a light emitting module according to Embodiment 8.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. Unless otherwise described, the same components are denoted by the same reference numerals, and description thereof will not be repeated.

(Embodiment 1)
With reference to FIG. 1, a light emitting module 1 according to Embodiment 1 mainly includes a semiconductor light emitting device 10 that emits deep ultraviolet light 18, a liquid 50 that seals semiconductor light emitting device 10, and a semiconductor light emitting device 10. And a package (30, 40) accommodating the liquid and the liquid 50.

  The packages (30, 40) contain the semiconductor light emitting device 10 and the liquid 50. The package mainly includes a base 30 and a transparent member 40.

  The base 30 places the semiconductor light emitting element 10 thereon. In the present embodiment, the semiconductor light emitting device 10 is mounted on the base 30 via the submount 20. Examples of the material used for the base 30 include metal, resin, and ceramic. In this specification, a package (30, 40) including a base 30 made of metal is called a metal package, a package (30, 40) including a base 30 made of resin is called a resin package, and a base made of ceramic is used. The package (30, 40) including 30 is called a ceramic package. The package (30, 40) of the present embodiment may be any one of a metal package, a resin package, and a ceramic package. The base 30 is made of a material having high thermal conductivity, and may function as a heat sink.

The package may further include a submount 20. The sub-mount 20 mounts the semiconductor light emitting element 10. Examples of the material of the submount 20 include aluminum nitride (AlN), alumina (Al ₂ O ₃ ), silicon carbide (SiC), diamond, and silicon (Si). The submount 20 is preferably made of a material having high thermal conductivity. Therefore, the submount 20 may be preferably made of aluminum nitride (AlN) having a thermal conductivity of 160 to 250 W / (m · K). The surface of the submount on which the semiconductor light emitting element 10 is mounted may be a flat surface or a curved surface. Aluminum (Al), titanium (Ti), nickel (Ni), gold (Au) is applied to the surface of the submount on which the semiconductor light emitting device 10 is mounted in order to reflect the deep ultraviolet light 18 from the semiconductor light emitting device 10. Or a reflective layer made of silver (Ag) or the like.

  A first conductive pad 21 and a second conductive pad 22 may be provided on the surface of the submount on which the semiconductor light emitting element 10 is mounted. The n-type electrode 15 of the semiconductor light-emitting device 10 and the first conductive pad 21 of the submount 20 are electrically and mechanically connected by using the conductive bonding member 25, and the p-type electrode of the semiconductor light-emitting device 10 is connected. 16 and the second conductive pad 22 of the submount 20 are electrically and mechanically connected. Examples of the bonding member 25 include a solder made of gold-tin (AuSn) and silver-tin (AgSn), a metal bump made of gold (Au) or copper (Cu), and a conductive paste such as a silver paste. it can.

  In the present embodiment, the semiconductor light emitting device 10 may be flip-chip bonded on the submount 20. That is, the surface of the semiconductor light emitting device 10 on the substrate 11 side is directed to the opposite side of the submount 20 and the base 30, and the semiconductor layers (the n-type semiconductor layer 12, the active layer 13, the p-type semiconductor layer 14 The semiconductor light emitting element 10 may be mounted on the submount 20 with the surface of the semiconductor light emitting element 10 facing the submount 20 and the base 30. When the semiconductor light emitting device 10 is flip-chip bonded onto the submount 20, the deep ultraviolet light 18 radiated from the active layer 13 is radiated from the active layer 13 while being suppressed from being absorbed by the p-type semiconductor layer 14. The resulting deep ultraviolet light 18 can be extracted outside the semiconductor light emitting device 10.

  The submount 20 is fixed to the base 30 using a eutectic solder made of gold-tin (AuSn), a conductive paste such as a silver paste, or an adhesive. In order to efficiently extract the deep ultraviolet light 18 emitted from the semiconductor light emitting device 10 to the outside of the package (30, 40), the semiconductor light emitting device 10 is mounted near the center of the main surface 30a of the base 30. Is preferred.

  The package of the present embodiment may further include a lead pin 31 and a conductive wire 33. The lead pins 31 may be fixed to the base 30. The conductive wire 33 electrically connects the lead pin 31 to the first conductive pad 21 and the second conductive pad 22. As the conductive wire 33, a gold (Au) wire can be exemplified. A current is supplied to the semiconductor light emitting device 10 from an external power supply (not shown) via the lead pin 31, the first conductive pad 21, the second conductive pad 22, and the joining member 25, and the semiconductor light emitting device 10 Radiate.

  The transparent member 40 may be provided on the base 30 so as to cover the semiconductor light emitting device 10. The base 30 and the transparent member 40 may be joined by an adhesive 42 or the like.

  The transparent member 40 is transparent to the deep ultraviolet light 18 emitted from the semiconductor light emitting device 10. In this specification, the transparent member 40 is transparent to the deep ultraviolet light 18 radiated from the semiconductor light emitting element 10, and the transparent member 40 is defined as a wavelength of the deep ultraviolet light 18 radiated from the semiconductor light emitting element 10. , Means having a transmittance of 60% or more. The transparent member 40 may have a transmittance of preferably 75% or more, more preferably 90% or more, at the wavelength of the deep ultraviolet light 18 emitted from the semiconductor light emitting device 10. Here, the transmittance of the transparent member 40 increases as the transmittance of the transparent member 40 per unit length increases, and decreases as the thickness of the transparent member 40 increases. The transparent member 40 may have a low light absorption rate and a high light transmittance for the deep ultraviolet light 18 having a wavelength of 190 nm to 350 nm, preferably 200 nm to 320 nm, and more preferably 220 nm to 300 nm. . The transparent member 40 is made of a material having a transmittance of 80% or more, preferably 90% or more, more preferably 95% or more per 100 μm path length at the wavelength of the deep ultraviolet light 18 emitted from the semiconductor light emitting device 10. May be done.

  The transparent member 40 may have a concave shape having an opening on one side and a space inside. The transparent member 40 may be a cap. In this specification, the cap has a shape of a shell having an opening on one side and a space inside. In the present embodiment, the transparent member 40 as a cap may have a hemispherical shell shape having an opening on one side and a space inside. By forming the transparent member 40 with a cap having a hemispherical shell shape, the angle of incidence of the deep ultraviolet light 18 radiated from the semiconductor light emitting element 10 on the transparent member 40 can be made closer to vertical.

  The transparent member 40 may be made of any of synthetic quartz, quartz glass, alkali-free glass, sapphire, an inorganic compound such as fluorite (CaF), and resin. Table 1 shows an example of the transmittance per 100 μm path length (thickness) at a wavelength of 265 nm for some of the materials that can be used for the transparent member 40.

  Examples of the resin that can be used for the transparent member 40 include a silicone resin having no aromatic ring, an amorphous fluorine-containing resin, polyimide, an epoxy resin, a polyolefin, an acrylic resin such as polymethyl methacrylate, polycarbonate, polyester, polyurethane, Examples thereof include a resin to which a polysulfone-based resin, polysilane, polyvinyl ether, and an inorganic compound are added.

  As a silicone resin having no aromatic ring, polydimethylsiloxane JCR6122 (manufactured by Dow Corning Toray), JCR6140 (manufactured by Dow Corning Toray), HE59 (manufactured by Nihon Yamamura Glass), HE60 (manufactured by Nihon Yamamura Glass), HE61 ( Nihon Yamamura Glass), KER2910 (Shin-Etsu Chemical Co., Ltd.) and FER7061 (Shin-Etsu Chemical Co., Ltd.), which is a fluorine-containing organopolysiloxane, can be exemplified.

  As the amorphous fluorine-containing resin, perfluoro (4-vinyloxy-1-butene) polymer (Cytop (registered trademark), manufactured by Asahi Glass), 2,2-bistrifluoromethyl-4,5-difluoro-1,3 -A dioxol polymer (Teflon (registered trademark) AF, manufactured by DuPont).

  As the polyimide, a polyimide in which an aromatic compound is substituted with an alicyclic compound is preferable. As the alicyclic polyimide, a reaction product of an alicyclic dianhydride and an alicyclic diamine can be exemplified. Bicyclo [2.2.1] hepta-2-endo, 3-endo, 5-exo, 6-exo-tetracarboxylic acid-2,3: 5,6-dianhydride as alicyclic acid dianhydride , Bicyclo [2.2.1] hepta-2-exo, 3-exo, 5-exo, 6-exo-tetracarboxylic acid-2,3: 5,6-dianhydride, bicyclo [2.2.2]. ] Oct-2-endo, 3-endo, 5-exo, 6-exo-tetracarboxylic acid 2,3: 5,6-dianhydride, bicyclo [2.2.2] oct-2-exo, 3- exo, 5-exo, 6-exo-tetracarboxylic acid 2,3: 5,6-dianhydride, (4arH, 8acH) -decahydro-1t, 4t: 5c, 8c-dimetanonaphthalene 2c, 3c, 6c, 7c-tetracarboxylic acid-2,3: 6,7-dianhydride can be exemplified. Bis (aminomethylbicyclo [2.2.1] heptane can be exemplified as the alicyclic diamine.

  As the epoxy resin, an epoxy resin in which an aromatic ring is changed to an alicyclic compound is preferable. Examples of the epoxy resin in which the aromatic ring has been changed to an alicyclic compound include 3 ′, 4′-epoxycyclohexylmethyl 3,4-epoxycyclohexanecarboxylate (Celloxide 2021P, manufactured by Daicel), and ε-caprolactone-modified 3 ′, 4 ′ -Epoxycyclohexylmethyl 3,4-epoxycyclohexanecarboxylate (Celloxide 2081, manufactured by Daicel) and 1,2-epoxy-4-vinylcyclohexane (Celloxide 2000, manufactured by Daicel) can be exemplified.

  Polyolefins include polymers of chain olefins such as polyethylene, polypropylene and methylpentene, polymers of cyclic olefins such as norbornene, TPX (Mitsui Chemicals), APEL (Mitsui Chemicals), ARTON (JSR), ZEONOR (Japan Zeon), ZEONEX (Japan Zeon) and TOPAS (polyplastics).

  Magnesium oxide, zirconium oxide, hofium oxide, α-aluminum oxide, γ-aluminum oxide, aluminum nitride, calcium fluoride, lutetium aluminum garnet, silicon dioxide, magnesium aluminate, sapphire, diamond, etc. The above-mentioned resin may be added to the above-mentioned inorganic compound.

  The liquid 50 fills the internal space of the package (30, 40) and seals the semiconductor light emitting device 10. Specifically, the liquid 50 is filled in the space between the base 30 and the transparent member 40, and seals the semiconductor light emitting device 10. The liquid 50 may seal at least the emission surface of the semiconductor light emitting element 10 (the second surface 11b of the substrate 11).

  The liquid 50 is transparent to the deep ultraviolet light 18 emitted from the semiconductor light emitting device 10. In the present specification, the liquid 50 is transparent to the deep ultraviolet light 18 radiated from the semiconductor light emitting device 10, in which the liquid 50 has a wavelength of the deep ultraviolet light 18 radiated from the semiconductor light emitting device 10. It means having a transmittance of 60% or more. The liquid 50 may have a transmittance of preferably 75% or more, more preferably 90% or more, at the wavelength of the deep ultraviolet light 18 emitted from the semiconductor light emitting device 10. Here, the transmittance of the liquid 50 increases as the transmittance of the liquid 50 per unit length increases, and decreases as the thickness of the liquid 50 increases. The liquid 50 has a low light absorption rate and a high light transmittance for the deep ultraviolet light 18 having a wavelength of 190 nm to 350 nm, preferably 200 nm to 320 nm, more preferably 220 nm to 300 nm. The liquid 50 has a transmittance of 80% or more, preferably 90% or more, more preferably 95% or more per 100 μm path length (thickness) at the wavelength of the deep ultraviolet light 18 emitted from the semiconductor light emitting device 10. It may be composed of a material.

  The liquid 50 may be composed of any of pure water, a liquid organic compound, a salt solution, and a fine particle dispersion. Tables 2 to 10 show examples of the transmittance per 100 μm path length (thickness) at a wavelength of 193 nm, 248 nm, 265 nm, or 300 nm, and 193 nm and 248 nm for some of the materials that can be used for the liquid 50. 1 shows an example of the refractive index at a wavelength of 265 nm or 300 nm.

  Table 2 shows the transmittance per 100 μm path length (thickness) of pure water at wavelengths of 193 nm, 248 nm, and 265 nm, and the refractive index at wavelengths of 193 nm, 248 nm, and 265 nm.

  The liquid organic compound may be composed of any of a saturated hydrocarbon compound, an organic solvent having no aromatic ring, an organic halide, a silicone resin, and a silicone oil. Tables 3 to 6 show examples of the transmittance per 100 μm path length (thickness) at a wavelength of 193 nm, 248 nm, or 265 nm and 193 nm for some of the liquid organic compound materials that can be used for the liquid 50. 4 shows an example of the refractive index at a wavelength of 248 nm or 265 nm.

  Table 3 shows the transmittance per 100 μm path length (thickness) at a wavelength of 193 nm or 265 nm and the refractive index at a wavelength of 193 nm or 265 nm for some of the saturated hydrocarbon compounds that can be used for the liquid 50. Is shown.

Examples of the saturated hydrocarbon compound include a chain saturated hydrocarbon compound and a cyclic saturated hydrocarbon compound. As the chain type saturated hydrocarbon compound, n-pentane, n-hexane, n-heptane, n-octane, n-nonane, n-decane, n-undecane, n-dodecane, n-tridecane, n-tetradecane, n- Examples thereof include pentadecane, n-hexadecane, n-heptadecane, n-octadecane, 2,2-dimethylbutane, and 2-methylpentane. As the cyclic saturated hydrocarbon compound, cyclopentane, cyclohexane, cycloheptane, cyclooctane, cyclononane, cyclodecane, methylcyclohexane, ethylcyclohexane, propylcyclohexane, butylcyclohexane, methylcuban, methyldinorbornene, octahydroindene, 2-ethyl Norbornene, 1,1′-bicyclohexyl, trans-decahydronaphthalene, cis-decahydronaphthalene, exo-tetrahydrodicyclopentadiene, tricyclo [6.2.1.0 ^2,7 ] undecane, perhydrofluorene, 3-methyltetracyclo [ 4.4.0.1 ^2,5 .1 ^7,10] dodecane, 1,3-dimethyl adamantane, perhydro-phenanthrene, can be exemplified perhydro pyrene. As the saturated hydrocarbon compounds, IF131 (manufactured by DuPont), IF132 (manufactured by DuPont), IF138 (manufactured by DuPont), IF169 (manufactured by DuPont), HIL-001 (manufactured by JSR), HIL-002 (manufactured by JSR), HIL-203 (manufactured by JSR) Further examples include HIL-204 (manufactured by JSR), Delphi (manufactured by Mitsui Chemicals), and Babylon (manufactured by Mitsui Chemicals).

  Table 4 shows the transmittance per 100 μm path length (thickness) at a wavelength of 193 nm, 248 nm, or 265 nm and 193 nm, 248 nm for some of the organic solvents having no aromatic ring that can be used for the liquid 50. , Or the refractive index at a wavelength of 265 nm.

  Examples of the organic solvent having no aromatic ring include a compound having a hydroxyl group, a compound having a carbonyl group, a compound having a sulfinyl group, a compound having an ether bond, a compound having a nitrile group, a compound having an amino group, and a compound having an amino group. Sulfur compounds can be exemplified. Examples of the compound having a hydroxyl group include isopropanol, isobutanol, glycerol, methanol, ethanol, propanol, and butanol. Examples of the compound having a carbonyl group include N-methylpyrrolidone, N, N-dimethylformamide, acetone, methyl ethyl ketone, diethyl ketone, cyclohexanone, cyclopentanone, methyl methacrylate, methyl acrylate, and n-butyl acrylate. it can. Dimethyl sulfoxide can be exemplified as the compound having a sulfinyl group. Examples of the compound having an ether bond include tetrahydrofuran and 1,8-cineole. Acetonitrile can be illustrated as a compound having a nitrile group. Examples of the compound having an amino group include triethylamine and formamide. Examples of the sulfur-containing compound include carbon disulfide.

  Table 5 shows the transmittance per 100 μm path length (thickness) at a wavelength of 265 nm and the refractive index at a wavelength of 265 nm for some of the organic halides that can be used for the liquid 50.

  Examples of the organic halide include a fluorine compound, a chlorine compound, a bromine compound, and an iodine compound. As a fluorine compound, a perfluoro (4-vinyloxy-1-butene) polymer (Cytop) (registered trademark), a 2,2-bistrifluoromethyl-4,5-difluoro-1,3-dioxole polymer (Teflon (registered trademark) (Trademark) AF, manufactured by DuPont). As chlorine compounds, dichloromethane, dichloroethane, trichloroethane, tetrachloroethane, pentachloroethane, chloropropane, dichloropropane, trichloropropane, tetrachloropropane, pentachloropropane, hexachloropropane, chlorohexanol, trichloroacetyl chloride, carbon tetrachloride, chloroacetone, 1-chlorobutane Chlorocyclohexane, chloroform, chloroethanol, chlorohexane, chlorohexanone and epichlorohydrin. Examples of the bromine compound include bromoethane, bromoethanol, dibromomethane, dibromoethane, dibromopropane, bromoform, tribromoethane, tribromopropane, tetrabromoethane, and 1-bromopropane. Examples of the iodine compound include iodine compounds such as methyl iodide, ethyl iodide, propyl iodide, diiodomethane, and diiodopropane.

  Table 6 shows the transmittance per 100 μm path length (thickness) at a wavelength of 265 nm and the refractive index at a wavelength of 265 nm for a part of the silicone resin or silicone oil that can be used for the liquid 50.

  Silicone resin or silicone oil has an organopolysiloxane as a main chain and an organic group bonded to a Si atom. Organic groups include carbon-containing functional groups, fluorine-containing functional groups, chlorine-containing functional groups, bromine-containing functional groups, iodine-containing functional groups, nitrogen-containing functional groups, and oxygen atoms. A functional group containing at least one of a functional group and a functional group containing a sulfur atom can be exemplified. Examples of the functional group containing a carbon atom include a methyl group, an ethyl group, and a propyl group. Examples of the functional group containing a fluorine atom include a trifluoromethyl group, a trifluoroethyl group, and a trifluoropropyl group. Examples of the functional group containing a chlorine atom include a trichloromethyl group, a trichloroethyl group, and a trichloropropyl group. Examples of the functional group containing a bromine atom include a tribromomethyl group, a tribromoethyl group, and a tribromopropyl group. Examples of the functional group containing an iodine atom include a triiodomethyl group, a triiodoethyl group, and a triiodopropyl group. Examples of the functional group containing a nitrogen atom include an amino group, a nitrile group, an isocyanate group, and a ureido group. Examples of the functional group containing an oxygen atom include an epoxy group, a methacryl group, and an ether group. Examples of the functional group containing a sulfur atom include a mercapto group and a sulfinyl group. As silicone resin or silicone oil, JCR6122 (manufactured by Dow Corning Toray), JCR6140 (manufactured by Dow Corning Toray), HE59 (manufactured by Japan Yamamura Glass), HE60 (manufactured by Japan Yamamura Glass), HE61 (manufactured by Japan Yamamura Glass), KER2910 (made by Shin-Etsu Chemical) and FER7061 (made by Shin-Etsu Chemical) can be further exemplified. These materials include materials that can be cured by irradiating or heating light other than deep ultraviolet light, but in this embodiment, these materials are in a liquid state without curing treatment. Is used as the liquid 50.

  The salt solution may be composed of any of an acid solution, an inorganic salt solution, and an organic salt solution. Tables 7 to 9 show an example of the transmittance per 100 μm path length (thickness) at a wavelength of 193 nm or 248 nm for a part of the salt solution that can be used for the liquid 50, and the values of 193 nm or 248 nm. An example of the refractive index at a wavelength is shown.

  Table 7 shows the transmittance per 100 μm path length (thickness) at a wavelength of 193 nm or 248 nm and the refractive index at a wavelength of 193 nm or 248 nm for some of the acid solutions that can be used for the liquid 50. Is shown.

  Acids include phosphoric acid, sulfuric acid, hydrochloric acid, hydrobromic acid, nitric acid, citric acid, methanesulfonic acid, methacrylic acid, butyric acid, isobutyric acid, caproic acid, caprylic acid, lauric acid, palmitic acid, stearic acid, oleic acid Examples can be given.

  Table 8 shows the transmittance per 100 μm path length (thickness) at a wavelength of 193 nm and the refractive index at a wavelength of 193 nm for a part of the inorganic salt solution that can be used for the liquid 50.

  As inorganic salts, sodium chloride, potassium chloride, cesium chloride, ammonium chloride, calcium chloride, lithium chloride, rubidium chloride, tetramethylammonium chloride, aluminum chloride hexahydrate, sodium bromide, zinc bromide, lithium bromide, odor Potassium bromide, rubidium bromide, cesium bromide, ammonium bromide, lithium sulfate, sodium sulfate, potassium sulfate, rubidium sulfate, cesium sulfate, magnesium sulfate, gadolinium sulfate, zinc sulfate, alum, ammonium alum, sodium hydrogen sulfate, hydrogen sulfite Examples thereof include sodium, sodium hydrogen phosphate, sodium dihydrogen phosphate, potassium dihydrogen phosphate, sodium perchlorate, sodium thiocyanate, sodium thiosulfate, and sodium sulfite.

  Table 9 shows the transmittance per 100 μm path length (thickness) at a wavelength of 193 nm and the refractive index at a wavelength of 193 nm for a part of the organic salt solution that can be used for the liquid 50.

  As organic salts, lithium acetate, sodium acetate, potassium acetate, rubidium acetate, cesium acetate, tetramethylammonium acetate, tetraethylammonium acetate, tetrapropylammonium acetate, triethylammonium acetate, diethyldimethylammonium acetate, tetrabutylammonium acetate, tetramethylammonium chloride Ammonium, tetramethylammonium bromide, barium methanesulfonate, lanthanum methanesulfonate, cesium methanesulfonate, cyclohexyltrimethylammonium methanesulfonate, sodium cyclohexanesulfonate, sodium cyclohexylmethanesulfonate, sodium decahydronaphthalene-2-sulfonate , 1-adamantane potassium methanesulfonate, 1-adamantane potassium sulfonate Decyltrimethylammonium methanesulfonate, hexadecyltrimethylammonium methanesulfonate, adamantyltrimethylammonium methanesulfonate, cyclohexyltrimethylammonium methanesulfonate, 1,1'-dimethylpiperidinium methanesulfonate, 1-methylquinucuri methanesulfonate Dinium, 1,1-dimethyldecahydroquinolinium methanesulfonate, 1,1,4,4-tetramethylpiperazine-1,4-diium methanesulfonate, 1,4-dimethyl-1,4-diazoniabicyclo [ 2.2.2] Octane can be exemplified.

  Examples of the solvent used for the salt solution include, but are not limited to, water, an organic solvent, and a solution dissolved in a silicone resin or silicone oil. Examples of the organic solvent include cyclohexane, decane, saturated hydrocarbon compound solutions such as decahydronaphthalene, n-butyl acrylate, n-methyl acrylate, tetrahydrofuran, chloroform, methyl ethyl ketone, methyl methacrylate, dichloromethane, and dimethyl silicone oil. Can be.

  Table 10 shows the transmittance per 100 μm path length (thickness) at a wavelength of 248 nm or 300 nm and the transmittance at a wavelength of 193 nm, 248 nm, or 300 nm for a part of the fine particle dispersion liquid that can be used for the liquid 50. And the refractive index.

  As fine particles of the fine particle dispersion, magnesium oxide, zirconium oxide, hafnium oxide, α-aluminum oxide, γ-aluminum oxide, aluminum nitride, calcium fluoride, lutetium aluminum garnet, silicon dioxide (silica), magnesium aluminate, sapphire, diamond And other inorganic compounds. The surface of the fine particles may be modified with another material, such as surface-modified zirconia.

  Examples of the solvent for dispersing the fine particles include, but are not limited to, water, an organic solvent, and a solution dissolved in a silicone resin or silicone oil. Examples of the organic solvent include cyclohexane, decane, saturated hydrocarbon compound solutions such as decahydronaphthalene, n-butyl acrylate, n-methyl acrylate, tetrahydrofuran, chloroform, methyl ethyl ketone, methyl methacrylate, dichloromethane, and dimethyl silicone oil. Can be.

  The liquid 50 may have a refractive index of 1.32 or more, preferably 1.40 or more, and more preferably 1.45 or more at the wavelength of the deep ultraviolet light 18 emitted from the semiconductor light emitting device 10. The liquid 50 may further preferably have a refractive index of 1.50 or more, more preferably 1.55 or more. Since the liquid 50 has a refractive index of 1.32 or more at the wavelength of the deep ultraviolet light 18 radiated from the semiconductor light emitting element 10, the liquid 50 is refracted at the wavelength of the deep ultraviolet light 18 radiated from the semiconductor light emitting element 10. The refractive index can be made closer to the refractive index (the refractive index of the substrate 11) of the emission surface (second surface 11b) of the semiconductor light emitting device 10 at the wavelength of the deep ultraviolet light 18.

  The liquid 50 has a smaller refractive index than the emission surface (the second surface 11b) of the semiconductor light emitting device 10 at the wavelength of the deep ultraviolet light 18 radiated from the semiconductor light emitting device 10, and has a smaller refractive index than the transparent member 40. It may have a large refractive index. Therefore, the reflectance at the interface between the liquid 50 and the exit surface (second surface 11 b) of the semiconductor light emitting element 10 and the reflectance at the interface between the liquid 50 and the transparent member 40 can be reduced.

  The liquid 50 preferably has an insulating property. In the present embodiment, the liquid 50 contains the n-type electrode 15, the p-type electrode 16, the first conductive pad 21, the second conductive pad 22, the joining member 25, the lead pin 31, and the conductive wire 33. And is in contact with. When the liquid 50 has an insulating property, a short circuit between the n-type electrode 15 and the p-type electrode 16 can be prevented. When the liquid 50 has conductivity, the surface of the semiconductor light emitting element 10, the surface of the first conductive pad 21, the surface of the second conductive pad 22, the surface of the bonding member 25, and the surface of the lead pin 31 And a thin insulating film on the surface of the conductive wire 33.

  The semiconductor light emitting device 10 includes a substrate 11, an n-type semiconductor layer 12, an active layer 13, a p-type semiconductor layer 14, an n-type electrode 15, and a p-type electrode 16.

The substrate 11 has a first surface 11a and a second surface 11b opposite to the first surface 11a. The second surface 11b may be an emission surface. The substrate 11 preferably has a high transmittance, for example, 50% or more with respect to the wavelength of the deep ultraviolet light 18 emitted from the semiconductor light emitting element 10. Examples of the material of the substrate 11 include aluminum nitride (AlN), silicon carbide (SiC), sapphire, gallium nitride (GaN), gallium oxide (Ga ₂ O ₃ ), and silicon (Si). As the substrate 11, a template substrate in which a base layer made of aluminum nitride (AlN), aluminum gallium nitride (AlGaN), or the like is formed on a substrate made of sapphire, SiC, or the like may be used.

On the first surface 11a of the substrate 11, an n-type semiconductor layer 12 is provided. The n-type semiconductor layer 12 may be made of a nitride semiconductor made of AlInGaN. More specifically, n-type semiconductor layer _{12, Al x1 In y1 Ga z1 N} (x 1, y 1, z 1 _{is, 0 ≦ x 1 ≦ 1.0,0 ≦} y 1 ≦ 0.1,0 ≦ z ₁ ≦ 1.0 and x ₁ + y ₁ + z ₁ = 1.0). The n-type semiconductor layer 12 preferably contains n-type impurities such as silicon (Si), germanium (Ge), tin (Sn), oxygen (O), and carbon (C). The concentration of the n-type impurity in the n-type semiconductor layer 12 is 1.0 × 10 ¹⁷ cm ^{−3 to} 1.0 × 10 ²⁰ cm ⁻³ , preferably 1.0 × 10 ¹⁸ cm ^{−3 to} 1.0 It may be less than × 10 ¹⁹ cm ^-3 . The n-type semiconductor layer 12 may have a thickness of 100 to 10000 nm, preferably 500 to 3000 nm.

  In order to confine electrons and holes in the active layer 13 by the n-type semiconductor layer 12, and to prevent the deep ultraviolet light 18 emitted from the active layer 13 from being absorbed by the first p-type semiconductor layer 14a, n The type semiconductor layer 12 preferably has a band gap energy larger than the energy of the deep ultraviolet light 18 radiated from the active layer 13. The n-type semiconductor layer 12 has a lower refractive index than the active layer 13 and may function as a cladding layer. The n-type semiconductor layer 12 may be composed of a single layer, or may be composed of a plurality of layers having different Al composition, In composition, or Ga composition. The plurality of layers different in Al composition, In composition, or Ga composition may have a superlattice structure or a gradient composition structure in which the composition changes gradually.

  An active layer 13 is provided on the n-type semiconductor layer 12. The active layer 13 is configured such that deep ultraviolet light 18 having a wavelength of 190 to 350 nm, preferably 200 to 320 nm, more preferably 220 to 300 nm is emitted from the active layer 13. The deep ultraviolet light 18 emitted from the semiconductor light emitting device 10 has a wavelength of 190 to 350 nm, preferably 200 to 320 nm, more preferably 220 to 300 nm.

The active layer 13 may be made of a nitride semiconductor made of AlInGaN. More specifically, the active layer _{13, Al x2 In y2 Ga z2 N} (x 2, y 2, z 2 _{is, 0 ≦ x 2 ≦ 1.0,0 ≦} y 2 ≦ 0.1,0 ≦ z _(A rational number satisfying ₂ ≦ 1.0, x ₂ + y ₂ + z ₂ = 1.0), and Al _x3 In _{y3 Gaz3} N (x ₃ , y ₃ and z ₃ are rational numbers satisfying 0 ≦ x ₃ ≦ 1.0, 0 ≦ y ₃ ≦ 0.1 and 0 ≦ z ₃ ≦ 1.0, and x ₃ + y ₃ + z ₃ = 1.0 And a barrier layer composed of: a multi quantum well (MQW) structure. The active layer 13 has a smaller band gap energy than the n-type semiconductor layer 12 and the p-type semiconductor layer 14 in order to confine electrons and holes in the active layer 13 by the n-type semiconductor layer 12 and the p-type semiconductor layer 14. Is preferred. The active layer 13 may have a higher refractive index than the n-type semiconductor layer 12 and the p-type semiconductor layer 14.

  On the active layer 13, a p-type semiconductor layer 14 is provided. The p-type semiconductor layer may be composed of a first p-type semiconductor layer 14a located on the active layer 13 side and a second p-type semiconductor layer 14b located on the opposite side of the active layer 13.

The first p-type semiconductor layer 14a may be made of a nitride semiconductor made of AlInGaN. More specifically, the first p-type semiconductor layer 14a _{is, Al x4 In y4 Ga z4 N} (x 4, y 4, z 4 _{is, 0 ≦ x 4 ≦ 1.0,0 ≦} y 4 ≦ 0. 1, x is a rational number satisfying 0 ≦ z ₄ ≦ 1.0, and x ₄ + y ₄ + z ₄ = 1.0). The first p-type semiconductor layer 14a preferably contains a p-type impurity such as magnesium (Mg), zinc (Zn), and beryllium (Be). The concentration of the p-type impurity in the first p-type semiconductor layer 14a may be 1.0 × 10 ¹⁷ cm ⁻³ or more, preferably 1.0 × 10 ¹⁸ cm ⁻³ or more. The first p-type semiconductor layer 14a may have a thickness of 5 to 1000 nm, preferably 10 to 500 nm or less.

  To confine electrons and holes in the active layer 13 by the first p-type semiconductor layer 14a, and to suppress absorption of the deep ultraviolet light 18 emitted from the active layer 13 by the first p-type semiconductor layer 14a. In addition, the first p-type semiconductor layer 14a may have a band gap energy larger than the energy of the deep ultraviolet light 18 emitted from the active layer 13. In order to more uniformly inject holes from the first p-type semiconductor layer 14a into the active layer 13, the first p-type semiconductor layer 14a may have a small Al composition ratio. The first p-type semiconductor layer 14a has a lower refractive index than the active layer 13, and may function as a cladding layer. The first p-type semiconductor layer 14a may be composed of a single layer, or may be composed of a plurality of layers having different Al composition, In composition, or Ga composition. The plurality of layers different in Al composition, In composition, or Ga composition may have a superlattice structure or a gradient composition structure in which the composition changes gradually.

The second p-type semiconductor layer 14b may be made of a nitride semiconductor made of AlInGaN. More specifically, the second p-type semiconductor layer 14b _{is, Al x5 In y5 Ga z5 N} (x 5, y 5, z 5 _{is, 0 ≦ x 5 ≦ 1.0,0 ≦} y 5 ≦ 0. 1, a rational number satisfying 0 ≦ z ₅ ≦ 1.0, and x ₅ + y ₅ + z ₅ = 1.0). The second p-type semiconductor layer 14b preferably contains a p-type impurity such as magnesium (Mg), zinc (Zn), and beryllium (Be). The second p-type semiconductor layer 14b has a higher p-type conductivity than the first p-type semiconductor layer 14a, and may function as a p-type contact layer. The concentration of the p-type impurity in the second p-type semiconductor layer 14b may be 1.0 × 10 ¹⁷ cm ⁻³ or more, preferably 1.0 × 10 ¹⁸ cm ⁻³ or more. In order to prevent the deep ultraviolet light 18 radiated from the active layer 13 from being absorbed by the second p-type semiconductor layer 14b, and to obtain a good p-type contact in the second p-type semiconductor layer 14b, The second p-type semiconductor layer 14b may have a thickness of 1 to 500 nm.

  When the first p-type semiconductor layer 14a and the second p-type semiconductor layer 14b are made of a nitride semiconductor, the smaller the Al composition of the nitride semiconductor and the smaller the band gap, the more the second p-type semiconductor Holes can be more uniformly injected into the active layer 13 from the layer 14b, and good p-type contact characteristics can be obtained. Therefore, the second p-type semiconductor layer 14b may have a small Al composition ratio. The second p-type semiconductor layer 14b is provided with a deep ultraviolet light radiated from the active layer 13 in order to suppress absorption of the deep ultraviolet light 18 radiated from the active layer 13 by the second p-type semiconductor layer 14b. It may have a band gap energy larger than the energy of the light 18.

  The n-type electrode 15 is provided on an exposed surface of the n-type semiconductor layer 12. The exposed surface of the n-type semiconductor layer 12 is formed by stacking the n-type semiconductor layer 12, the active layer 13, and the p-type semiconductor layer 14 on the substrate 11, Means that the n-type semiconductor layer 12 is exposed by partially removing the p-type semiconductor layer 14. The p-type electrode 16 is provided on the surface of the p-type semiconductor layer 14, more specifically, on the surface of the second p-type semiconductor layer 14 b that may function as a p-type contact layer.

  With reference to FIGS. 2A to 3C, a method for manufacturing the light emitting module 1 according to the present embodiment will be described. An example of the method for manufacturing the light emitting module 1 according to the present embodiment may include the following steps.

  The semiconductor light emitting device 10 is prepared (S10). The semiconductor light emitting device 10 is mounted on the base 30 (S20). Referring to FIG. 3A, the liquid 50 is filled in the transparent member 40 by discharging the liquid 50 from the nozzle 52 (S30). Referring to FIG. 3B, the base 30 on which the semiconductor light emitting element 10 is mounted is put on the opening of the transparent member 40 filled with the liquid 50 (S40). As a result, the semiconductor light emitting device 10 is inserted into the transparent member 40 filled with the liquid 50, and the base 30 contacts the transparent member 40. Referring to FIG. 3 (C), the transparent member 40 and the base 30 are bonded with an adhesive 42 (S50).

The step of preparing the semiconductor light emitting device 10 may include the following steps.
A semiconductor layer including an n-type semiconductor layer 12, an active layer 13, and a p-type semiconductor layer 14 is formed on a first surface of a wafer by metal organic chemical vapor deposition (MOCVD) or metal organic chemical vapor deposition. (MOVPE), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE) and the like (S12). The wafer becomes the substrate 11 after a later dicing process, and the first surface of the wafer becomes the first surface 11a of the substrate 11 after the later dicing process. A part of the semiconductor layer including the n-type semiconductor layer 12, the active layer 13, and the p-type semiconductor layer 14 is partially removed by etching or the like to form a mesa structure (S13). An n-type electrode 15 is formed on the exposed surface of the n-type semiconductor layer 12 formed by the etching by a method such as a vacuum evaporation method (S14). In order to improve the electrical contact between the n-type semiconductor layer 12 and the n-type electrode 15, it is preferable to perform annealing at a temperature of 300 ° C. or more and 1100 ° C. or less for a time of 30 seconds or more and 3 minutes or less. Then, a p-type electrode 16 is formed on the p-type semiconductor layer 14 by a method such as a vacuum evaporation method (S16). In order to improve the electrical contact between the p-type semiconductor layer 14 and the p-type electrode 16, it is preferable to anneal at a temperature of 200 ° C to 800 ° C for 30 seconds to 3 minutes. Then, the wafer is diced (S18), and the individualized semiconductor light emitting devices 10 are obtained.

The operation and effect of the light emitting module 1 according to the present embodiment will be described.
The light emitting module 1 according to the present embodiment includes a semiconductor light emitting element 10 that emits deep ultraviolet light 18, a liquid 50 that seals the semiconductor light emitting element 10, and a package (30) that contains the semiconductor light emitting element 10 and the liquid 50. , 40). The liquid 50 is transparent to the deep ultraviolet light 18 emitted from the semiconductor light emitting device 10. The package (30, 40) has a transparent member 40 that is transparent to the deep ultraviolet light 18 emitted from the semiconductor light emitting device 10.

  Since the transparent member 40 and the liquid 50 are transparent to the deep ultraviolet light 18 emitted from the semiconductor light emitting element 10, the transparent member 40 and the liquid 50 have a low light absorption at the wavelength of the deep ultraviolet light 18. . Therefore, the deep ultraviolet light 18 emitted from the semiconductor light emitting element 10 can be efficiently extracted to the outside of the package (30, 40). Further, since the transparent member 40 and the liquid 50 are transparent and have a low light absorption at the wavelength of the deep ultraviolet light 18, even if the transparent member 40 and the liquid 50 are exposed to the deep ultraviolet light 18 for a long time, The light transmittance of the transparent member 40 and the liquid 50 at the wavelength of the ultraviolet light 18 can be prevented from lowering. As a result, according to the light emitting module 1 of the present embodiment, a highly reliable light emitting module including the semiconductor light emitting element 10 that emits the deep ultraviolet light 18 can be provided.

  Since the liquid 50 has fluidity, the heat generated in the semiconductor light emitting element 10 causes the liquid 50 to convect in the internal space of the package (30, 40). Since the liquid 50 convects the internal space of the package (30, 40), a specific portion of the liquid 50 does not continue to exist near the semiconductor light emitting device 10 where the light density of the deep ultraviolet light 18 is high. Therefore, only a specific part of the liquid 50 continues to be irradiated with the high-density deep ultraviolet light 18 radiated from the semiconductor light emitting element 10, and the liquid 50 is deteriorated and the liquid 50 at the wavelength of the deep ultraviolet light 18 is deteriorated. The light transmittance can be prevented from lowering. In addition, since the liquid 50 is located between the transparent member 40 and the semiconductor light emitting device 10 that emits the deep ultraviolet light 18, the light density of the deep ultraviolet light 18 in the transparent member 40 is limited to the deep ultraviolet light near the semiconductor light emitting device 10. It is sufficiently smaller than the light density of the light 18. Therefore, even if the solid transparent member 40 has a higher light absorptivity for the deep ultraviolet light 18 than the liquid 50, the transparent member 40 is deteriorated by the irradiation of the deep ultraviolet light 18. Can be sufficiently suppressed. As a result, according to the light emitting module 1 of the present embodiment, a highly reliable light emitting module including the semiconductor light emitting element 10 that emits the deep ultraviolet light 18 can be provided.

  On the other hand, in the comparative example in which the semiconductor light emitting element 10 that emits the deep ultraviolet light 18 is sealed with the cured resin, the cured resin does not flow unlike the liquid 50. Therefore, the cured resin located in the vicinity of the semiconductor light emitting element 10 continues to be irradiated with the deep ultraviolet light 18 having a high light density and rapidly deteriorates. In the wavelength region of the deep ultraviolet light 18, the cured resin has a higher light absorptivity for the deep ultraviolet light 18 than the liquid 50, or the cured resin located near the semiconductor light emitting element 10. Further accelerates deterioration. Therefore, in the comparative example in which the semiconductor light emitting element 10 that emits the deep ultraviolet light 18 is sealed with the cured resin, a highly reliable light emitting module cannot be provided. The above description is supported by the following experimental examples.

  Referring to FIG. 4A, a solid line indicates a rate of change in light output with respect to an operation time of light emitting module 1 of an experimental example of the present embodiment. The dotted line indicates the rate of change of the light output with respect to the operation time of the light emitting module of the first comparative example without the liquid 50. In the first comparative example, the semiconductor light emitting device is covered with air. The alternate long and short dash line indicates the light emitting module of the second comparative example in which the semiconductor light emitting element 10 that emits the deep ultraviolet light 18 is sealed with a cured fluorosilicone resin FER7061 (manufactured by Shin-Etsu Chemical Co., Ltd.) instead of the liquid 50. The change rate of the light output with respect to the operation time is shown. The rate of change of the light output with respect to the operation time of the light emitting module is defined by a value obtained by normalizing the light output from the light emitting module after a certain time has elapsed with the light output from the light emitting module immediately after the operation. In the light emitting module 1 of the experimental example of the present embodiment, the transparent member 40 is a cap made of synthetic quartz and having a hemispherical shell shape with a thickness of 1.5 mm. In the light emitting module 1 of the experimental example of the present embodiment, the liquid 50 is 1,1'-bicyclohexyl. In the light emitting module 1 of the experimental example of the present embodiment, the semiconductor light emitting element 10 is configured to have an emission wavelength of 265 nm.

  The light emitting module 1 of the present embodiment in which the semiconductor light emitting element 10 is sealed with the liquid 50 has the same change rate of the light output with respect to the operation time as in the first comparative example in which the semiconductor light emitting element is covered with air. . Therefore, even if the operation time of the light emitting module 1 is long, the liquid 50 does not deteriorate and the transmittance does not decrease similarly to the air. It is considered that the change of the light output with respect to the operation time of the light emitting module 1 of the present embodiment is due to the change of the light output of the semiconductor light emitting element 10 itself.

  On the other hand, the light output of the light emitting module of the second comparative example in which the semiconductor light emitting element 10 is sealed with the cured resin is smaller than the light output of the light emitting module 1 of the present embodiment as the operation time becomes longer. Has also dropped significantly. The reason why the light output of the light emitting module of the second comparative example is greatly reduced is that the cured resin for sealing the semiconductor light emitting element 10 is deteriorated by the deep ultraviolet light 18 radiated from the semiconductor light emitting element 10, This is probably because the transmittance of the cured resin at the wavelength of the deep ultraviolet light 18 radiated from the semiconductor light emitting element 10 rapidly decreased. According to the light emitting module 1 of the present embodiment, a highly reliable light emitting module including the semiconductor light emitting element 10 that emits the deep ultraviolet light 18 can be provided, but the semiconductor light emitting element 10 is hardened. The light emitting module of the second comparative example sealed with resin cannot provide a highly reliable light emitting module.

  Referring to FIG. 4B, a solid line indicates a change in light output of light emitting module 1 of the present embodiment with respect to a current supplied to light emitting module 1 of the experimental example of the present embodiment. The dotted line shows the change in the light output of the light emitting module 1 of the first comparative example with respect to the current supplied to the light emitting module of the first comparative example without the liquid 50. The light emitting module 1 of the present embodiment has a light output that is twice as large as that of the light emitting module 1 of the first comparative example.

  In the light emitting module 1 of the present embodiment including the liquid 50, the semiconductor light emitting element 10 is sealed with the liquid 50. Generally, the refractive index of the liquid 50 is larger than the refractive index of air. The difference between the refractive index of the liquid 50 and the refractive index of the emission surface (second surface 11b) of the semiconductor light emitting element 10 (the refractive index of the substrate 11) at the wavelength of the deep ultraviolet light 18 is expressed by the wavelength of the deep ultraviolet light 18. Can be made smaller than the difference between the refractive index of air and the refractive index of the emission surface (second surface 11b) of the semiconductor light emitting element 10 (the refractive index of the substrate 11). Therefore, according to the light emitting module 1 of the present embodiment, the deep ultraviolet light 18 radiated from the active layer 13 of the semiconductor light emitting device 10 is totally reflected on the emission surface (the second surface 11b) of the semiconductor light emitting device 10. It is possible to efficiently extract the deep ultraviolet light 18 emitted from the active layer 13 of the semiconductor light emitting device 10 to the outside of the emission surface (second surface 11b) of the semiconductor light emitting device 10. As a result, according to the light emitting module 1 of the present embodiment, a light emitting module having a high light output can be provided.

  On the other hand, in the light emitting module of the first comparative example in which the semiconductor light emitting device 10 is covered with air, the refractive index of air at the wavelength of the deep ultraviolet light 18 and the emission surface of the semiconductor light emitting device 10 (the second surface) The difference from the refractive index of 11b) (the refractive index of the substrate 11) is large. Therefore, in the light emitting module of the first comparative example, most of the deep ultraviolet light 18 radiated from the active layer 13 of the semiconductor light emitting device 10 is totally reflected on the emission surface (second surface 11b) of the semiconductor light emitting device 10. As a result, it is difficult to extract the deep ultraviolet light 18 emitted from the active layer 13 of the semiconductor light emitting device 10 to the outside of the semiconductor light emitting device 10.

  Further, in the wavelength region of the deep ultraviolet light 18, the liquid 50 has a higher refractive index than a cured resin having a relatively high transmittance for the wavelength of the deep ultraviolet light 18. Therefore, the difference between the refractive index of the liquid 50 and the refractive index of the emission surface (second surface 11b) of the semiconductor light emitting element 10 (the refractive index of the substrate 11) at the wavelength of the deep ultraviolet light 18 The difference between the refractive index of the cured resin and the refractive index of the emission surface (second surface 11b) of the semiconductor light emitting element 10 (the refractive index of the substrate 11) at the wavelength of. Therefore, according to the light emitting module 1 of the present embodiment in which the semiconductor light emitting element 10 is sealed with the liquid 50, the semiconductor light emitting element 10 is more sealed than the light emitting module of the second comparative example in which the semiconductor light emitting element 10 is sealed with the cured resin. In addition, it is possible to reduce the total reflection of the deep ultraviolet light 18 radiated from the active layer 13 of the semiconductor light emitting device 10 on the emission surface (the second surface 11b) of the semiconductor light emitting device 10, and Of the semiconductor light emitting device 10 can be efficiently extracted to the outside of the emission surface (second surface 11b) of the semiconductor light emitting device 10. As a result, according to the light emitting module 1 of the present embodiment, it is possible to provide a light emitting module having a higher light output than the light emitting module of the second comparative example.

  In light emitting module 1 of the present embodiment, transparent member 40 contains liquid 50, and transparent member 40 is in contact with liquid 50. The refractive index of the liquid 50 is generally higher than the refractive index of air. The difference between the refractive index of the liquid 50 and the refractive index of the transparent member 40 at the wavelength of the deep ultraviolet light 18 is determined by comparing the refractive index of air and the refractive index of the transparent member 40 at the wavelength of the deep ultraviolet light 18 in the first comparative example. It can be smaller than the difference from the rate. Therefore, according to the light emitting module 1 of the present embodiment, the reflection of the deep ultraviolet light 18 radiated from the semiconductor light emitting element 10 on the transparent member 40 is reduced, and the deep ultraviolet light radiated from the semiconductor light emitting element 10 is reduced. 18 can be efficiently taken out of the light emitting module 1. As a result, according to the light emitting module 1 of the present embodiment, a light emitting module having a high light output can be provided.

  As described above, in the light emitting module 1 of the present embodiment, the deep ultraviolet light 18 radiated from the semiconductor light emitting element 10 can be extracted outside the light emitting module 1 with high efficiency. The conversion of the deep ultraviolet light 18 radiated from the semiconductor light emitting element 10 into heat in the light emitting module 1 can be reduced. Therefore, according to the light emitting module 1 of the present embodiment, the life of the semiconductor light emitting element 10 that emits the deep ultraviolet light 18 can be extended, and the reliability of the light emitting module 1 including the semiconductor light emitting element 10 that emits the deep ultraviolet light 18 can be improved. A light emitting module having a high density can be provided.

  Since the liquid 50 has fluidity, the semiconductor light emitting device 10 that emits the deep ultraviolet light 18 can be sealed only by injecting the liquid 50 into the internal space of the package (30, 40). Therefore, according to the light emitting module 1 according to the present embodiment, a light emitting module having high reliability and high light output can be provided at low cost.

  Since the liquid 50 has fluidity, the shape of the liquid 50 changes according to the shape of the internal space of the package (30, 40). Therefore, according to the light emitting module 1 according to the present embodiment, the semiconductor light emitting element 10 included in various types of light emitting modules including packages (30, 40) having various internal space shapes can be easily and inexpensively sealed. Can be stopped.

  In the light emitting module 1 according to the present embodiment, the liquid 50 may be composed of any of pure water, a liquid organic compound, a salt solution, and a fine particle dispersion. Therefore, according to the light emitting module 1 of the present embodiment, it is possible to provide a light emitting module having the semiconductor light emitting element 10 that emits the deep ultraviolet light 18 and having high reliability and high light output.

  In the light emitting module 1 according to the present embodiment, the liquid organic compound may be composed of any of a saturated hydrocarbon compound, an organic solvent having no aromatic ring, an organic halide, a silicone resin, and a silicone oil. Therefore, according to the light emitting module 1 of the present embodiment, it is possible to provide a light emitting module having the semiconductor light emitting element 10 that emits the deep ultraviolet light 18 and having high reliability and high light output.

  In the light emitting module 1 according to the present embodiment, the salt solution may be composed of any of an acid solution, an inorganic salt solution, and an organic salt solution. Therefore, according to the light emitting module 1 of the present embodiment, it is possible to provide a light emitting module having the semiconductor light emitting element 10 that emits the deep ultraviolet light 18 and having high reliability and high light output.

  In the light emitting module 1 according to the present embodiment, the liquid 50 has a wavelength of the deep ultraviolet light 18 radiated from the semiconductor light emitting element 10 of 1.32 or more, preferably 1.40 or more, and more preferably 1.45 or more. May be provided. Therefore, the refractive index of the liquid 50 at the wavelength of the deep ultraviolet light 18 radiated from the semiconductor light emitting element 10 is changed to the refractive index of the emission surface (second surface 11b) of the semiconductor light emitting element 10 at the wavelength of the deep ultraviolet light 18 (substrate). 11 refractive index). Therefore, it is further reduced that the deep ultraviolet light 18 radiated from the active layer 13 of the semiconductor light emitting device 10 is totally reflected on the emission surface (the second surface 11b) of the semiconductor light emitting device 10, and the activity of the semiconductor light emitting device 10 is reduced. The deep ultraviolet light 18 radiated from the layer 13 can be more efficiently extracted outside the emission surface (the second surface 11b) of the semiconductor light emitting device 10. As a result, according to the light emitting module 1 of the present embodiment, a light emitting module having a higher light output can be provided.

  In the light emitting module 1 according to the present embodiment, the liquid 50 has a smaller refractive index than the emission surface (second surface 11b) of the semiconductor light emitting device 10 at the wavelength of the deep ultraviolet light 18 emitted from the semiconductor light emitting device 10. And may have a larger refractive index than the transparent member 40. According to the light emitting module 1 of the present embodiment, the reflectance at the interface between the liquid 50 and the emission surface (second surface 11b) of the semiconductor light emitting element 10 and the reflectance at the interface between the liquid 50 and the transparent member 40 are determined. Can be reduced. Therefore, according to the light emitting module 1 of the present embodiment, the deep ultraviolet light 18 radiated from the semiconductor light emitting device 10 can be efficiently extracted to the outside of the package (30, 40), and has a higher light output. A light emitting module can be provided.

  In the light emitting module 1 according to the present embodiment, the liquid 50 may be made of a material having a transmittance of 80% or more per 100 μm path length at the wavelength of the deep ultraviolet light 18 emitted from the semiconductor light emitting device 10. Good. Therefore, according to the light emitting module 1 of the present embodiment, it is possible to provide a highly reliable and high light output light emitting module including the semiconductor light emitting element 10 that emits the deep ultraviolet light 18.

  In the light emitting module 1 according to the present embodiment, the liquid 50 has a transmittance of 60% or more, preferably 75%, more preferably 90% or more at the wavelength of the deep ultraviolet light 18 emitted from the semiconductor light emitting element 10. May have. Therefore, according to the light emitting module 1 of the present embodiment, it is possible to provide a light emitting module having the semiconductor light emitting element 10 that emits the deep ultraviolet light 18 and having high reliability and high light output.

  In the light emitting module 1 according to the present embodiment, the transparent member 40 may be a cap. The cap has a shape of a shell having an opening on one side and a space inside, and has a sufficiently thin thickness as compared with a plate. In the light emitting module 1 of the present embodiment, the thickness of the transparent member 40 as a cap is sufficiently smaller than the thickness of the cured resin for sealing the semiconductor light emitting element 10 in the light emitting module of the second comparative example. In the light emitting module 1 of the present embodiment, the absorption of the deep ultraviolet light 18 in the transparent member 40 as the cap is made smaller than the absorption of the deep ultraviolet light 18 in the cured resin in the light emitting module of the second comparative example. Can be. Therefore, according to the light emitting module 1 of the present embodiment, it is possible to improve the extraction efficiency of the deep ultraviolet light 18 from the package (30, 40).

  On the other hand, in the light emitting module of the second comparative example, the thickness of the cured resin that seals the semiconductor light emitting element 10 is larger than the thickness of the transparent member 40 that is the cap in the light emitting module 1 of the present embodiment. Is also thick enough. The absorption of the deep ultraviolet light 18 in the cured resin of the light emitting module of the second comparative example is larger than the absorption of the deep ultraviolet light 18 in the transparent member 40 which is the cap of the light emitting module 1 of the present embodiment. Therefore, it is difficult to improve the extraction efficiency of the deep ultraviolet light 18 from the light emitting module of the second comparative example.

  The thickness of the transparent member 40 as a cap is small. Therefore, the shape of the transparent member 40 as a cap can be changed easily and at low cost. Furthermore, the shape of the liquid 50 changes freely according to the shape of the internal space of the package (30, 40). Therefore, according to the light emitting module 1 according to the present embodiment, by using the transparent member 40 as the cap and the liquid 50, various types of packages (30, 40) having various internal space shapes are provided. The light emitting module can be manufactured easily and inexpensively.

  On the other hand, in the light emitting module of the second comparative example in which the semiconductor light emitting element 10 is sealed with the cured resin, the cured resin sealing the semiconductor light emitting element 10 is formed by potting the resin to the semiconductor light emitting element 10. After that, it is manufactured by curing the resin. Therefore, it is difficult to form the outer surface of the cured resin into an arbitrary shape. In the light-emitting module of the second comparative example in which the semiconductor light-emitting element 10 is sealed with the cured resin, the cured resin that seals the semiconductor light-emitting element 10 is cured by pouring the resin into a mold. It may be produced by causing However, it is necessary to prepare molds having various shapes corresponding to various types of light emitting modules having packages (30, 40) having various internal space shapes. As a result, in the light emitting module of the second comparative example in which the semiconductor light emitting element 10 is sealed with the cured resin, various types of light emitting modules including packages having various internal space shapes can be easily and inexpensively manufactured. Difficult to do.

In light emitting module 1 according to the present embodiment, transparent member 40 may have a hemispherical shell shape . With the transparent member 40 having a hemispherical shell shape , the incident angle of the deep ultraviolet light 18 radiated from the semiconductor light emitting element 10 to the transparent member 40 can be made close to vertical. Therefore, the reflection of the deep ultraviolet light 18 radiated from the semiconductor light emitting element 10 on the transparent member 40 can be suppressed, and the efficiency of extracting the deep ultraviolet light 18 from the package (30, 40) can be improved. it can.

  On the other hand, in the light-emitting module of the second comparative example in which the semiconductor light-emitting element 10 is sealed with the cured resin, the potting of the resin to the semiconductor light-emitting element 10 is followed by curing of the resin. It is difficult to shape the outer surface into a hemisphere. Therefore, in the light emitting module of the second comparative example in which the semiconductor light emitting element 10 is sealed with the cured resin, the deep ultraviolet light 18 radiated from the semiconductor light emitting element 10 is reflected on the outer surface of the cured resin. It is difficult to suppress this effectively.

  In the light emitting module 1 according to the present embodiment, the transparent member 40 may be made of any of synthetic quartz, quartz glass, non-alkali glass, sapphire, fluorite, and resin. Synthetic quartz, quartz glass, non-alkali glass, sapphire, fluorite, and resin are all 190 nm to 350 nm, preferably 200 nm to 320 nm, more preferably 220 nm to 300 nm, On the other hand, it has low light absorption and high light transmittance. Therefore, according to the light emitting module 1 of the present embodiment, it is possible to provide a light emitting module having the semiconductor light emitting element 10 that emits the deep ultraviolet light 18 and having high reliability and high light output.

  In the light emitting module 1 according to the present embodiment, the transparent member 40 is made of a material having a transmittance of 80% or more per 100 μm path length at the wavelength of the deep ultraviolet light 18 emitted from the semiconductor light emitting element 10. Is also good. Therefore, according to the light emitting module 1 of the present embodiment, it is possible to provide a light emitting module having the semiconductor light emitting element 10 that emits the deep ultraviolet light 18 and having high reliability and high light output.

  In the light emitting module 1 according to the present embodiment, the transparent member 40 has a transmittance of 60% or more, preferably 75%, more preferably 90% or more at the wavelength of the deep ultraviolet light 18 radiated from the semiconductor light emitting element 10. May be provided. Therefore, according to the light emitting module 1 of the present embodiment, it is possible to provide a light emitting module having the semiconductor light emitting element 10 that emits the deep ultraviolet light 18 and having high reliability and high light output.

(Embodiment 2)
The light emitting module 1a according to the second embodiment will be described with reference to FIG. The light emitting module 1a of the present embodiment basically has the same configuration as the light emitting module 1 of the first embodiment shown in FIG. 1 and can obtain the same effect, but mainly in the following points. different.

  In the light emitting module 1a of the present embodiment, the semiconductor light emitting device 10a includes the uneven structure 17 for improving the efficiency of extracting the deep ultraviolet light 18 radiated from the active layer 13 of the semiconductor light emitting device 10a to the outside of the semiconductor light emitting device 10a. . More specifically, the concavo-convex structure 17 for improving the efficiency of extracting the deep ultraviolet light 18 to the outside of the semiconductor light emitting device 10a may be included in the emission surface (second surface 11b) of the semiconductor light emitting device 10a. The uneven structure 17 can reduce the total reflection of the deep ultraviolet light 18 radiated from the active layer 13 of the semiconductor light emitting device 10a on the emission surface (second surface 11b) of the semiconductor light emitting device 10a. Therefore, by providing the concavo-convex structure 17 on the semiconductor light emitting device 10a, the efficiency of extracting the deep ultraviolet light 18 outside the semiconductor light emitting device 10a can be improved. According to the light emitting module 1a of the present embodiment, it is possible to provide a light emitting module including the semiconductor light emitting element 10a that emits the deep ultraviolet light 18 and having high reliability and higher light output.

  In the concavo-convex structure 17, concave portions and convex portions may be randomly arranged. The concave-convex structure 17 may be configured such that concave portions and convex portions are periodically arranged. The uneven structure 17 may be arranged in a triangular lattice, a square lattice, or a hexagonal lattice. The uneven structures 17 are preferably arranged in a triangular lattice with a maximum filling factor. The shape of the concave portion or the convex portion of the concave-convex structure 17 may have the shape of a prism, a cylinder, a cone, a pyramid, a sphere, or a semi-elliptical sphere.

  With reference to FIG. 6A, a method for manufacturing the semiconductor light emitting element 10a of the light emitting module 1a according to the present embodiment will be described. An example of a method for manufacturing the semiconductor light emitting element 10a of the light emitting module 1a according to the present embodiment is basically the same as the manufacturing method shown in FIG. 2B, except that the p-type electrode 16 is formed (S16). The difference is that a step (S17) of forming the concavo-convex structure 17 on the second surface opposite to the first surface of the wafer later is included. The second surface of the wafer becomes the second surface 11b of the substrate 11 after a later dicing step.

  Referring to FIG. 6B, the step (S17) of forming uneven structure 17 on the second surface of the wafer may include the following steps. forming a patterned etching mask on a second surface of the wafer opposite to the first surface on which the semiconductor layer including the n-type semiconductor layer 12, the active layer 13, and the p-type semiconductor layer 14 is formed; (S171). The second surface of the wafer is etched using the patterned etching mask (S172). Finally, the etching mask is removed (S173).

  The formation of the patterned etching mask (S171) may be performed by electron beam drawing, photolithography, nanoimprint, or the like. Etching the second surface 11b of the substrate 11 using the patterned etching mask (S172) includes dry etching such as inductively coupled plasma (ICP) etching or reactive ion etching (RIE), or an acidic solution. Alternatively, the etching may be performed by wet etching using an alkaline solution as an etching solution.

The light emitting module 1a of the present embodiment, in addition to the operation and effect with the light emitting module 1 of the first embodiment will be have the following functions and effects.

  In the light emitting module 1a according to the present embodiment, the semiconductor light emitting element 10a has the uneven structure 17 that improves the efficiency of extracting the deep ultraviolet light 18 emitted from the active layer 13 of the semiconductor light emitting element 10a to the outside of the semiconductor light emitting element 10a. May be included. The uneven structure 17 can reduce the total reflection of the deep ultraviolet light 18 radiated from the active layer 13 of the semiconductor light emitting device 10a on the emission surface (second surface 11b) of the semiconductor light emitting device 10a. Therefore, by providing the concavo-convex structure 17 on the semiconductor light emitting device 10a, the efficiency of extracting the deep ultraviolet light 18 outside the semiconductor light emitting device 10a can be improved. According to the light emitting module 1a of the present embodiment, it is possible to provide a light emitting module including the semiconductor light emitting element 10a that emits the deep ultraviolet light 18 and having high reliability and higher light output.

  The light emitting module 1a according to the present embodiment includes a semiconductor light emitting element 10a and a liquid 50 for sealing the semiconductor light emitting element 10a, and the semiconductor light emitting element 10a has a depth radiated from the active layer 13 of the semiconductor light emitting element 10a. An uneven structure 17 for improving the efficiency of extracting ultraviolet light 18 to the outside of the semiconductor light emitting element 10a may be included. Since the liquid 50 has higher fluidity than the cured resin, the liquid 50 can fill the concave portions of the uneven structure 17 without gaps. Generally, the refractive index of the liquid 50 is higher than the refractive index of air. Therefore, the difference between the refractive index of the liquid 50 at the wavelength of the deep ultraviolet light 18 and the refractive index of the surface of the semiconductor light emitting element 10a on which the uneven structure 17 is formed at the wavelength of the deep ultraviolet light 18 can be reduced. According to the light emitting module 1a of the present embodiment, the deep ultraviolet light 18 radiated from the active layer 13 of the semiconductor light emitting device 10a is totally reflected on the emission surface (second surface 11b) of the semiconductor light emitting device 10. Is reduced by the uneven structure 17 and the liquid 50, and the deep ultraviolet light 18 radiated from the active layer 13 of the semiconductor light emitting device 10 a can be efficiently extracted to the outside of the semiconductor light emitting device 10. As a result, according to the light emitting module 1a of the present embodiment, a light emitting module having high reliability and high light output can be provided.

  On the other hand, referring to FIGS. 7A to 7C, when the semiconductor light emitting element 10a on which the uneven structure 17 is formed is sealed with a cured resin, the cured resin becomes uneven. A void is generated in a part of the concave portion. It is considered that this void was generated because the resin before curing did not enter a part of the concave portion of the uneven structure 17 or because the resin was thermally shrunk when the resin was cured. In the gap in the uneven structure 17, the semiconductor light emitting element 10a comes into contact with air, gas, or vacuum having a low refractive index. Therefore, it is difficult to extract the deep ultraviolet light 18 radiated from the active layer 13 of the semiconductor light emitting device 10a to the outside of the semiconductor light emitting device 10a from the emission surface of the semiconductor light emitting device 10 in contact with the gap with high efficiency. As a result, when the semiconductor light emitting device 10a on which the uneven structure 17 is formed is sealed with a cured resin, even if the uneven structure 17 is introduced into the semiconductor light emitting device 10a, the deep ultraviolet light 18 will The efficiency of extracting light to the outside of the light emitting element 10a can be improved only in a limited manner.

(Embodiment 3)
With reference to FIG. 8, a light emitting module 1b according to Embodiment 3 will be described. The light emitting module 1b of the present embodiment basically has the same configuration as the light emitting module 1a of the second embodiment shown in FIG. 5 and can obtain the same effects, but mainly in the following points. different.

  The light emitting module 1b of the present embodiment includes a package (40, 60) including the base 60 and the transparent member 40. The packages (40, 60) of the present embodiment include a base 60 instead of the base 30 of the first embodiment. Examples of the material used for the base 60 include metals, resins, and ceramics. In this specification, a package (40, 60) including a base 60 made of metal is called a metal package, a package (40, 60) including a base 60 made of resin is called a resin package, and a base made of ceramic is used. The package (40, 60) including 60 is called a ceramic package. The package (40, 60) of the present embodiment may be any one of a metal package, a resin package, and a ceramic package. The base 60 is made of a material having high thermal conductivity, and may function as a heat sink. In the present embodiment, aluminum nitride (AlN) may be used as the material of base 60.

  The base 60 has a side wall 61 provided therearound. A recess 62 for accommodating the semiconductor light emitting element 10a is formed inside the side wall 61. The side wall 61 has a side surface 63 facing the concave portion 62. A first conductive pad 65 and a second conductive pad 66 are provided on the bottom surface of the concave portion 62 of the base 60. The base 60 has a surface 67 opposite to the recess 62. On the surface 67 of the base 60, a third conductive pad 68 and a fourth conductive pad 69 are provided. In order to improve the extraction efficiency of the deep ultraviolet light 18 from the light emitting module 1b of the present embodiment, a reflective film may be provided on the bottom surface and the side surface 63 of the concave portion 62 of the base 60.

  The base 60 has a first through-hole 71 and a second through-hole 72. The first through hole 71 and the second through hole 72 connect the concave portion 62 and the surface 67. A conductive member 74 is provided in the first through hole 71 and the second through hole 72. The conductive member 74 connects the recess 62 and the surface 67.

  The semiconductor light emitting device 10a may be mounted on the base 60. The n-type electrode 15 of the semiconductor light emitting element 10a and the first conductive pad 65 of the base 60 are electrically and mechanically connected by using the conductive bonding member 25, and the p-type electrode of the semiconductor light emitting element 10a is electrically connected. 16 and the second conductive pad 66 of the base 60 are electrically and mechanically connected. In the present embodiment, an external (not shown) through the bonding member 25, the first conductive pad 65, the second conductive pad 66, the conductive member 74, the third conductive pad 68, and the fourth conductive pad 69. A current is supplied from a power supply to the semiconductor light emitting element 10a, and the semiconductor light emitting element 10a emits deep ultraviolet light 18.

Emitting module 1b of the present embodiment, in addition to the operation and effect with the light emitting module 1a of the second embodiment, which have the following functions and effects.

  In the light emitting module 1b of the present embodiment, since a conductive wire for supplying a current from the external power supply to the semiconductor light emitting element 10a is not used, the wire bonding step can be omitted. Therefore, according to the light emitting module 1b of the present embodiment, the productivity of the light emitting module can be improved, and the production cost can be reduced.

  Since the liquid 50 has fluidity, the shape of the liquid 50 changes according to the shape of the internal space of the package (40, 60). Therefore, even in the package (40, 60) of the present embodiment having an internal space shape different from that of the package (30, 40) of the first embodiment, the semiconductor light emitting element 10a can be easily and inexpensively formed by the liquid 50. Can be sealed.

(Embodiment 4)
With reference to FIG. 9, a light emitting module 1c according to Embodiment 4 will be described. The light emitting module 1c of the present embodiment basically has the same configuration as the light emitting module 1b of the third embodiment shown in FIG. 8 and can obtain the same effects, but mainly in the following points. different.

  The light emitting module 1c of the present embodiment includes a package (40c, 60) including the base 60 and the transparent member 40c. The transparent member 40c may be a cap having any of a semi-elliptical spherical shell and a shell having a shell shape. The deep ultraviolet light 18 emitted from the semiconductor light emitting device 10a can be refracted by the transparent member 40c as a cap. Therefore, when the transparent member 40c as a cap has one of a semi-elliptical spherical shell and a shell having a shell shape, the light distribution characteristics of the deep ultraviolet light 18 emitted from the semiconductor light emitting element 10a can be varied. Can be changed to

  Since the liquid 50 has fluidity, the shape of the liquid 50 changes according to the shape of the internal space of the package (40c, 60). Therefore, even with the package (40c, 60) of the present embodiment having a different shape of the internal space from the package (40, 60) of the third embodiment, the semiconductor light emitting element 10a can be easily and inexpensively manufactured by the liquid 50. Can be sealed.

(Embodiment 5)
The light emitting module 1d according to the fifth embodiment will be described with reference to FIG. The light emitting module 1d of the present embodiment basically has the same configuration as the light emitting module 1a of the second embodiment shown in FIG. 5 and can obtain the same effects, but mainly in the following points. different.

The light emitting module 1d of the present embodiment includes a package (40d, 44, 30 ) including the base 30, the transparent member 40d, and the cap 44. In the present embodiment, the transparent member 40d is a flat plate. The cap 44 mechanically supports the transparent member 40d. As a material used for the cap 44, metal or resin can be exemplified. The cap 44 may be fixed to the base 30 by an adhesive 42 or welding.

  The transparent member 40d may be made of any of synthetic quartz, quartz glass, non-alkali glass, sapphire, fluorite, and resin, similarly to the transparent member 40 of the first embodiment.

  Since the liquid 50 has fluidity, the shape of the liquid 50 changes according to the shape of the space inside the package (40d, 44, 30). Therefore, even in the package (40d, 44, 30) of the present embodiment having a different internal space shape from the package (30, 40) of the first embodiment, the semiconductor light emitting element 10a can be easily formed by the liquid 50. In addition, sealing can be performed at low cost.

(Embodiment 6)
With reference to FIG. 11, a light emitting module 1e according to Embodiment 6 will be described. The light emitting module 1e of the present embodiment basically has the same configuration as the light emitting module 1d of the fifth embodiment shown in FIG. 10 and can obtain the same effects, but mainly in the following points. different.

The light emitting module 1e of the present embodiment includes a package (40e, 44, 30 ) including the base 30, the transparent member 40e, and the cap 44. In the light emitting module 1e of the present embodiment, the package (40e, 44, 30) includes a transparent member 40e instead of the transparent member 40d of the fifth embodiment. The transparent member 40e is a lens.

  In the light emitting module 1e of the present embodiment, the transparent member 40e is a lens. The deep ultraviolet light 18 emitted from the semiconductor light emitting element 10a can be refracted by the transparent member 40d as a lens. Therefore, the light distribution characteristic of the deep ultraviolet light 18 emitted from the semiconductor light emitting element 10a can be changed by the transparent member 40e as a lens.

(Embodiment 7)
With reference to FIG. 12, a light emitting module 1f according to the seventh embodiment will be described. The light emitting module 1f of the present embodiment basically has the same configuration as the light emitting module 1d of the fifth embodiment shown in FIG. 10 and can obtain the same effects, but mainly in the following points. different.

  The light emitting module 1f of the present embodiment includes a package (40d, 60) including a base 60 and a transparent member 40d. In the light emitting module 1f of the present embodiment, the package (40d, 60) includes the base 60 of the third embodiment instead of the base 30 of the fifth embodiment. The periphery of the transparent member 40d is placed on the top of the side wall 61 of the base 60, and the transparent member 40d is mechanically supported by the side wall 61 of the base 60. The peripheral portion of the transparent member 40d is fixed on the side wall 61 of the base 60 using an adhesive 42 or the like.

  An example of a method for manufacturing the light emitting module 1f according to the present embodiment may include the following manufacturing method. The semiconductor light emitting device 10a is prepared. The semiconductor light emitting device 10a is placed on the bottom surface of the concave portion 62 of the base 60. By discharging the liquid from the nozzle, the inside of the concave portion 62 of the base 60 is filled with the liquid 50. The transparent member 40d, which is a flat plate, is placed over the opening of the concave portion 62 of the base 60 filled with the liquid 50. The peripheral portion of the transparent member 40d is fixed on the side wall 61 of the base 60 using an adhesive 42 or the like.

  The light emitting module 1f of the present embodiment has the function and effect of the base 60 of the third embodiment in addition to the function and effect of the light emitting module 1f of the fifth embodiment.

(Embodiment 8)
The light emitting module 1g according to Embodiment 8 will be described with reference to FIG. The light emitting module 1g of the present embodiment basically has the same configuration as the light emitting module 1f of the seventh embodiment shown in FIG. 12 and can obtain the same effects, but mainly in the following points. different.

  The light emitting module 1g of the present embodiment includes a package (40g, 60) including a base 60 and a transparent member 40g. In the light emitting module 1g of the present embodiment, the package (40g, 60) includes a transparent member 40g instead of the transparent member 40d of the eighth embodiment. The transparent member 40g is a transparent plate having a lens formed on the surface. The periphery of the transparent member 40g is placed on the top of the side wall 61 of the base 60, and the transparent member 40g is mechanically supported by the side wall 61 of the base 60. The transparent member 40g is fixed on the side wall 61 of the base 60 using an adhesive 42 or the like.

  In the light emitting module 1g of the present embodiment, the transparent member 40g is a transparent plate having a lens formed on the surface. The deep ultraviolet light 18 emitted from the semiconductor light emitting element 10a can be refracted by the lens of the transparent member 40g. Therefore, the light distribution characteristics of the deep ultraviolet light 18 emitted from the semiconductor light emitting element 10a can be changed by the transparent member 40g.

  The embodiments disclosed this time are to be considered in all respects as illustrative and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  1, 1a, 1b, 1c, 1d, 1e, 1f, 1g Light-emitting module, 4, 40, 40d, 40e, 40g Transparent member, 10, 10a Semiconductor light-emitting element, 11 substrate, 11a first surface, 11b second Surface, 12 n-type semiconductor layer, 13 active layer, 14 p-type semiconductor layer, 14 a first p-type semiconductor layer, 14 b second p-type semiconductor layer, 15 n-type electrode, 16 p-type electrode, 17 uneven structure, Reference Signs List 18 ultraviolet light, 20 submount, 21 first conductive pad, 22 second conductive pad, 25 joining member, 30 base, 30a main surface, 31 lead pin, 33 conductive wire, 42 adhesive, 44 cap, 50 liquid , 52 nozzle, 60 base, 61 side wall, 62 recess, 63 side surface, 65 first conductive pad, 66 second conductive pad, 67 surface, 68 third conductive pad, 69 fourth conductive pad, 71 first through hole, 72 second through hole, 74 conductive member.

Claims (20)

A deep ultraviolet light emitting module that emits deep ultraviolet light,
A semiconductor light emitting device that emits the deep ultraviolet light,
And a liquid for sealing the semiconductor light emitting element, wherein the liquid is transparent to the deep ultraviolet light emitted from the semiconductor light emitting element,
A package containing the semiconductor light emitting element and the liquid, the package having a transparent member transparent to the deep ultraviolet light emitted from the semiconductor light emitting element,
The deep ultraviolet light has a wavelength between 190 and 350 nm,
The semiconductor light-saw including a externally taken out to periodic uneven structure of the deep ultraviolet light of the semiconductor light emitting element to be emitted from the active layer of the semiconductor light emitting element,
The period of the unevenness of the periodic uneven structure is 1 μm or less,
The deep ultraviolet light emitting module , wherein the liquid fills the concave portions of the periodic uneven structure without gaps . The deep ultraviolet light emitting module according to claim 1, wherein a period of the irregularities is equal to or longer than the wavelength. The deep ultraviolet light emitting module according to claim 1, wherein the liquid has higher fluidity than a cured resin. The deep ultraviolet light emitting module according to claim 3 , wherein the liquid is composed of any of pure water, a liquid organic compound, a salt solution, and a fine particle dispersion. The deep ultraviolet light emitting module according to claim 4 , wherein the liquid organic compound is composed of any of a saturated hydrocarbon compound, an organic solvent having no aromatic ring, an organic halide, a silicone resin, and a silicone oil. The deep ultraviolet light emitting module according to claim 4 , wherein the salt solution is formed of any one of an acid solution, an inorganic salt solution, and an organic salt solution. The deep ultraviolet light emitting module according to any one of claims 1 to 6 , wherein the liquid has a refractive index of 1.32 or more at a wavelength of the deep ultraviolet light emitted from the semiconductor light emitting element. The deep ultraviolet light emitting module according to any one of claims 1 to 6 , wherein the liquid has a refractive index of 1.40 or more at a wavelength of the deep ultraviolet light emitted from the semiconductor light emitting element. The liquid, at the wavelength of the deep ultraviolet light emitted from the semiconductor light emitting device, has a smaller refractive index than the emission surface of the semiconductor light emitting device, and has a larger refractive index than the transparent member, deep ultraviolet light emitting module according to any one of claims 8 to claim 1. Said liquid, said at a wavelength of the deep ultraviolet light emitted from the semiconductor light emitting element comprises a material having a path length transmittance of 80% or more per 100 [mu] m, any one of claims 1 to 9 A deep ultraviolet light emitting module according to the item. The deep ultraviolet light emitting module according to any one of claims 1 to 10 , wherein the liquid has a transmittance of 60% or more at a wavelength of the deep ultraviolet light emitted from the semiconductor light emitting element. The deep ultraviolet light emitting module according to any one of claims 1 to 10 , wherein the liquid has a transmittance of 75% or more at a wavelength of the deep ultraviolet light emitted from the semiconductor light emitting element. The transparent member is a cap, deep ultraviolet light emitting module according to any one of claims 1 to 12. The transparent member is hemispherical shells, having any of the shapes of the shells with semi-elliptical spherical shell, and the shape of the shells, deep ultraviolet light emitting module according to any one of claims 13 claim 1. The transparent member is flat, is a transparent plate lens is formed on the lens surface or deep ultraviolet light emitting module according to any one of claims 1 to 12. The deep ultraviolet light emitting module according to any one of claims 1 to 15 , wherein the transparent member is made of any one of synthetic quartz, quartz glass, alkali-free glass, sapphire, fluorite, and resin. The transparent member, the at the wavelength of the deep ultraviolet light emitted from the semiconductor light emitting element comprises a material having a transmittance of 80% or more per path length of 100 [mu] m, any of claims 1 to 1 6 12. The deep ultraviolet light emitting module according to claim 1. The deep ultraviolet light emitting module according to any one of claims 1 to 17 , wherein the transparent member has a transmittance of 60% or more at a wavelength of the deep ultraviolet light emitted from the semiconductor light emitting element. The package, metal packaging, the resin package, either the ceramic package, deep ultraviolet light emitting module according to any one of claims 1 to 18. The semiconductor the deep ultraviolet light emitted from the light emitting element has a wavelength between 200～320Nm, deep ultraviolet light emitting module according to any one of claims 19 claim 1.