JP6639128B2 - Thin metal wire film and method of manufacturing the same - Google Patents

Description

  The present invention relates to a thin metal wire film and a method for producing the same.

  In a substrate with a transparent electrode layer used for a display device such as a touch panel or a display, a light emitting device such as an LED, and a light receiving device such as a solar cell, it is important to control electrical characteristics represented as sheet resistance. As a material for such a transparent electrode, a transparent conductive oxide containing indium oxide as a main component is generally used.

  However, since the conductivity of the transparent conductive oxide is inferior to the conductivity of the metal, the limit value of the electrical characteristics (lower resistance) of the substrate with the transparent electrode layer becomes higher than that of the metal. Therefore, in recent years, a thin metal wire film in which a low-resistance thin metal wire is formed into a mesh shape on a substrate with a transparent electrode layer and bonded to a transparent film using an adhesive layer has been considered.

  In this technique, the pattern shape of the metal mesh may be formed by a photolithography method. In such a case, the surface shape of the metal surface is transferred to the adhesive layer located at the pattern opening, and if the surface is, for example, a rough surface, the haze of the substrate with a transparent electrode layer increases, thereby causing a display. There is a possibility that it cannot be used for a display or the like.

  As an example of avoiding such a situation, a refractive index adjustment layer is interposed between the adhesive layer on which the surface shape of the metal surface is transferred and the transparent film, and the adhesive layer, the transparent film, and the refractive index adjustment layer There is a technique of adjusting the refractive index relationship of the three layers to suppress the haze value which is an index of turbidity (Patent Document 1).

JP 2007-208275 A

  However, in the technique of Patent Document 1, since the adhesive layer located at the pattern opening exists while having the transfer shape of the metal surface, the Haze value cannot be sufficiently suppressed only by the high refractive index adjustment layer alone. Sometimes. Further, the adjustment of the refractive index relationship restricts the selection of the material of the three layers, and reduces the degree of freedom in designing the thin metal wire film.

  The present invention has been made to solve the above problems. An object of the present invention is to provide a thin metal wire film or the like having a high degree of design freedom while sufficiently suppressing the haze value.

  In the metal thin wire film, a metal wiring pattern layer is arranged on a transparent film using an adhesive layer. In the thin metal wire film, a seal layer is disposed between the metal wiring pattern layer and the adhesive layer, and the adhesive layer is exposed at an opening in the metal wiring pattern layer.

  In addition, the manufacturing method of the thin metal wire film which arrange | positioned the metal wiring pattern using the adhesive layer on the transparent film is as follows. That is, a step of applying a chemical agent serving as a base of a seal layer interposed between the fine metal wire pattern and the adhesive layer to one surface of a metal foil serving as a base of the metal wiring pattern layer, A step of bonding the metal foil and the transparent film to the adhesive layer on the film with the seal layer forming surface facing, a step of patterning the metal foil, and a step of bonding the remaining metal foils to each other. Removing the sealing layer exposed from between.

  ADVANTAGE OF THE INVENTION According to the thin metal wire film of this invention, the freedom of design can be raised, while suppressing a Haze value sufficiently.

1 is a sectional view of a thin metal wire film. FIG. 3 is a cross-sectional view illustrating a manufacturing process of a thin metal wire film. 1 is a sectional view of a thin metal wire film.

  An embodiment of the present invention will be described. FIG. 1 is a sectional view showing a thin metal wire film 10 which is a transparent conductive film. As shown in FIG. 1, the thin metal wire film 10 includes a transparent film 12, an adhesive layer 13, a seal layer 11, and a metal wiring pattern layer 15, and the adhesive layer 13, The sealing layer 11 and the metal wiring pattern layer 15 are laminated in this order.

  The material of the transparent film 12 is not particularly limited as long as it is colorless and transparent at least in the visible light region, as the base of the thin metal wire film 10.

  For example, polyester resins such as polyethylene terephthalate (PET), polybutylene terephthalate (PBT), and polyethylene naphthalate (PEN), cycloolefin resins, polycarbonate resins, polyimide resins, and cellulose resins are exemplified. Among them, polyester resins are preferable, and polyethylene terephthalate is particularly preferably used, from the viewpoint of inexpensiveness and excellent transparency.

  In addition, from the viewpoint of visibility, the transparent film 12 preferably has a refractive index of 1.40 or more and 1.75 or less, and more preferably has a refractive index of 1.50 or more and 1.70 or less.

  The thickness of the transparent film 12 is not particularly limited, but is preferably 10 μm or more and 400 μm or less, and more preferably 20 μm or more and 200 μm or less. Within this range, the transparent film 12, and eventually the metal thin film 10, have sufficient durability and have appropriate flexibility. In addition, if the transparent film 12 has a thickness within this range, another layer can be formed on the transparent film 12 by a roll-to-roll method.

  For example, when one or both surfaces of the front and back surfaces of the transparent film 12 are to be formed with a functional layer such as a hard coat layer made of, for example, a urethane-based resin, an acrylic-based resin, a silicone-based resin, etc. If the thickness of the transparent film 12 is within the range described above, a roll-to-roll method is employed. The thickness of the hard coat layer is preferably 1 μm or more and 10 μm or less, more preferably 3 μm or more and 8 μm or less, and still more preferably 5 μm or more and 8 μm or less so that the transparent film 12 has appropriate durability and flexibility.

  The adhesive layer 13 is a layer formed of a transparent adhesive 13 (for convenience, the same member number as that of the adhesive layer 13 is used) for attaching the metal wiring pattern layer 15 to the transparent film 12. The adhesive layer 13 bonds the metal wiring pattern layer 15 to the transparent film 12 via the seal layer 11. That is, the adhesive layer 13 does not directly adhere the metal wiring pattern layer 15 to the transparent conductive film 12, but indirectly adheres to the transparent conductive film 12 via the seal layer 11.

  The material of the adhesive layer 13 may be any material having an etching resistance in consideration of patterning such as etching for forming the metal wiring pattern layer 15 (details will be described later).

  For example, a polyurethane resin such as a polyurethane ester resin or a two-component curable urethane resin, an acrylic resin, a polyester resin, or an epoxy resin is cited as a material of the adhesive layer 13. In particular, from the viewpoint of the adhesion to the transparent film 12, the material of the adhesive layer 13 is preferably a two-component curable urethane resin such as a polyurethane resin, an acrylic resin, or a polyester resin. The curing mode of the transparent adhesive layer 13 may be any of room temperature curing, heat curing, electronic curing, UV curing, and the like.

  The thickness of the adhesive layer 13 is preferably in the range of 0.5 μm or more and 50 μm or less, and more preferably in the range of 1 μm or more and 20 μm or less. In such a range, not only the transparent film 12 and the metal wiring pattern layer 15 are firmly adhered to each other, but also in the etching for forming the metal wiring pattern layer 15, the transparent film 12 is etched with an etching solution such as iron oxide. Adverse effects are prevented.

  Further, the refractive index of the adhesive layer 13 is preferably 1.41 or more and 1.59 or less, more preferably 1.48 or more and 1.52 or less from the viewpoint of reducing interfacial reflection due to a difference in refractive index from the transparent film 12. . When it is within this range, the difference between the transmittance of the adhesive layer 13 and the refractive index of the transparent film 12 is 0.2 or less, at which interface reflection hardly occurs.

  The seal layer 11 is a layer interposed between the metal wiring pattern layer 15 and the adhesive layer 13. By interposing in this manner, the seal layer 11 does not transfer the surface shape of the metal wiring pattern layer 15 to the adhesive layer 13.

  The chemical agent 11 (for convenience, the same member number as that of the seal layer 11 is used) is the silane coupling agent 11. Specifically, the silane coupling agent 11 is an alkoxysilane having an alkoxy group as a hydrolyzing group.

  Examples of the alkoxy group include a trimethoxy group, a methyldimethoxy group, a triethoxy group, a tripropoxy group, a triisopropoxy group, a tributoxy group, and a partially hydrolyzed condensate thereof. Among these hydrolyzable groups, from the viewpoint of reactivity (curing speed), a trimethoxy group, a methyldimethoxy group, and a triethoxy group are preferable, and a trimethoxy group and a triethoxy group are particularly preferable.

  On the other hand, the silane coupling agent 11 has, as an organic functional group, an amino group, an organic acid group, an acid anhydride group, an isocyanate group, an epoxy group, a ureide group, a mercapto group, an imino group, a phosphoric acid group, a vinyl group, or , (Meth) acryloyl groups. Among these organic functional groups, an amino group, an organic acid group, an acid anhydride group, an epoxy group, an isocyanate group, and a phosphoric acid group are preferable from the viewpoint of adhesion to a metal foil. Further, from the viewpoint of removing a mask material used for etching the metal foil, an amino group, an organic acid group, or an acid anhydride group is preferable.

  Specific examples of the silane coupling agent 11 include vinyltriethoxysilane, vinyltrimethoxysilane, vinyltris (2-methoxyethoxy) silane, vinylmethyldimethoxysilane, 3-methacryloxypropyltriethoxysilane, and 3-methacryloxypropyl. Trimethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropyltriethoxysilane, 3-mercaptopropyltrimethoxysilane, 3 -Mercaptopropyltriethoxysilane, 3-octanoylthio-1-propyltriethoxysilane, 3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, N- (2-aminoethyl) -3-amido Propyltrimethoxysilane, N- (2-aminoethyl) -3-aminopropylmethyldimethoxysilane, 3- (N-phenyl) aminopropyltrimethoxysilane, 3-ureidopropyltriethoxysilane (50% methanol solution), 3 -Isocyanatopropyltriethoxysilane, 3-isocyanatopropyltrimethoxysilane, 3-triethoxysilyl-N- (1,3-dimethyl-butylidene) propylamine, 3-ureidopropyltrimethoxysilane, 3-trimethoxysilylpropyl succinate Acid anhydrides, for example, 3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, N- (2-aminoethyl) -3-aminopropyltrimethoxysilane, N- (2-aminoethyl) -3 -Aminopropylmethyldi Tokishishiran, 3- (N-phenyl) aminopropyltrimethoxysilane, and the like.

  The silane coupling agent 11 may be applied alone, but a curing catalyst may be added for the purpose of shortening the time for forming a coating film. The curing catalyst is preferably one that can be used under constant temperature and humidity (23 ° C. × 55%) and heating conditions (80 ° C. to 150 ° C., heating time 1 minute to 12 hours).

  The curing catalyst may be an acid, a base, a combination of an acid and a base, or may be an organometallic catalyst. Although not particularly limited, from the viewpoint of adhesion to metal, or the balance of curability, types of organotin catalyst include dibutyltin dilaurate, dibutyltin dimaleate, dibutyltin phthalate, or tin octylate. And the like, and one or more of these are suitably used. In addition, it is preferable that the addition amount is 0.5 part by weight or more and 3.0 parts by weight or less based on 100 parts by weight of the silane coupling agent.

  The metal wiring pattern layer 15 is a layer responsible for the conductivity of the thin metal wire film 10. For example, the metal foil 15 (for convenience, the metal wiring pattern layer 15) has a rough surface 15 A on one surface and a smooth surface 15 B on the other surface. 15 (using the same member number as 15). For example, the metal wiring pattern layer 15 is formed by etching in a photolithography method.

  In addition, from the viewpoint of the visibility of the thin metal wire film 10 and the adhesion of the metal wiring pattern layer 15 to the transparent film 12, the smooth surface (glossy surface) 15B of the metal foil 15 faces the user's viewing side, and is rough. It is preferable that the surface 15A faces the transparent film 12 side.

  It is necessary to select the material of the metal foil 15 from the viewpoint of the adhesion to the transparent film 12 and the viewpoint of the color from the outside. For example, a copper foil, an aluminum foil, a tin foil, a nickel foil, or a nickel alloy foil, Is mentioned. Further, from the viewpoint of etching, copper foil, aluminum foil, and tin foil may be mentioned, and from the viewpoint of conductivity, copper foil may be mentioned. Examples of the nickel alloy include an alloy of nickel with one or two kinds selected from phosphorus, titanium, vanadium, chromium, iron, cobalt, copper, tungsten, and the like, and a nickel-phosphorus alloy is invisible. It is suitably used from the viewpoints of properties and rust prevention.

  In addition, the thickness of the metal foil 15 is 1 μm or more and 35 μm or less, and from the viewpoint of etching processing or the strength of the thin metal wire after patterning, it is preferably 1 μm or more and 12 μm or less, and 1.5 μm or more and 8 μm or less. More preferred.

  Further, the coverage (shielding rate) of the metal wiring pattern layer 15 formed from the metal foil 15 with respect to the transparent film 12 is preferably 5% or less based on the area of the transparent film 12. When the area of the covering portion is 5% or more of the area of the transparent film 12, it is difficult to form the thin metal wire film 10 having a preferable light transmittance of 85% or more (more preferably 95% or more). .

  The light transmittance of the thin metal wire film 10 is obtained by subtracting the coverage of the metal wiring pattern layer 15 from the light transmittance of the transparent film 12. Therefore, by providing an optical adjustment layer on the transparent film 12, the optical characteristics of the transparent film 12 may be improved. For example, the transparent film 12 may have a low-reflection structure by laminating layers having different refractive indices, or the transparent film 12 may enhance light of a specific wavelength by using interference between transmitted light and reflected light. It may be.

  A method for manufacturing the above-described thin metal wire film 10 will be described with reference to FIG. 2 (FIGS. 2A to 2H).

  FIG. 2A shows the metal foil 15. In the metal foil 15, one of the front and back surfaces is a rough surface 15A and the other surface is a smooth surface 15B [metal foil preparation step]. Then, as shown in FIG. 2B, the silane coupling agent 11 is applied and cured on the rough surface 15A of the metal foil 15 to form the seal layer 11 [seal layer forming step].

  On the other hand, as shown in FIG. 2C, an adhesive 13 is applied to the transparent film 12 in a layer shape [adhesive layer forming step]. Then, as shown in FIG. 2D, the metal foil 15 and the transparent film 12 are attached to the adhesive layer 13 on the transparent film 12 with the surface to which the chemical 11 is applied (that is, the surface on which the seal layer 11 is formed) facing. Combine [lamination process]. At this stage of bonding, the adhesive 13 is uncured, and is cured after bonding, whereby the metal foil bonded film 10P is obtained.

  And in this metal foil bonding film 10P, although the sealing layer 11 covers the rough surface 15A of the metal foil 15, the surface shape of the rough surface 15A of the metal foil 15 is transferred to the sealing layer 11, The surface shape of the rough surface 15A is not transferred to the adhesive layer 13. That is, since the seal layer 15 is interposed between the metal foil 15 and the adhesive layer 13, the surface shape of the rough surface 15 </ b> A is not transmitted to the adhesive layer 13.

  Subsequently, as shown in FIG. 2E, a mask pattern 16 is formed on the metal foil bonding film 10P [mask pattern forming step]. The production of the mask pattern 16 is not particularly limited. For example, the mask material may be directly formed as a mask pattern using an inkjet printing method or a micro contact printing method, or a positive or negative type mask material may be formed on the entire surface. A negative photoresist material may be applied and patterned by photolithography.

  The layer thickness (film thickness) of the mask pattern 16 is about 0.5 μm or more and 5 μm or less. For example, in the case of a photoresist material, the thickness of the mask material, and thus the thickness of the mask pattern 16 is about 0.5 μm or more and about 3 μm or less, and the line width (line width) of the pattern piece in the mask pattern 16 is about 1 μm or more and about 5 μm or less. In this case, the deviation width (slit width) of the pattern pieces is about 50 μm or more and 1000 μm or less.

  Then, as shown in FIG. 2F, the metal foil 15 not covered with the mask pattern 16 is patterned by etching using an etching solution [patterning step]. As a result, an opening 15H is formed in the metal foil 15, and the metal wiring pattern layer 15 is formed. Then, using an organic solvent, as shown in FIG. 2G, the mask pattern 16 and the seal layer 11 exposed from between the remaining metal foils 15 (openings 15H) are removed [removal step]. Thus, the thin metal wire film 10 is completed.

  Each of these steps is preferably performed by a roll-to-roll apparatus from the viewpoints of material use efficiency and reduction in the time required for the steps. However, it is not limited to the use of such devices.

  Further, in the above description, the metal thin film 10 in which the metal wiring pattern layer 15 and the like are laminated on one surface of the transparent film 12 as shown in FIG. 1 has been described as an example, and the manufacturing method has been described accordingly. It is not something to be done. For example, as shown in FIG. 3, a thin metal wire film 10 in which a metal wiring pattern layer 15 and the like are laminated on both surfaces of a transparent film 12 may be used. The manufacturing method described with reference to FIG. 2 is adopted for such a thin metal wire film 10. In this case, the number of steps can be reduced by forming the metal wiring pattern layer 15 and the like on both surfaces simultaneously.

  As described above, in the thin metal wire film 10, the metal wiring pattern layer 15 is arranged on the transparent film 12 using the adhesive layer 13. As shown in FIG. 1, in the thin metal wire film 10, the seal layer 11 is disposed between the metal wiring pattern layer 15 and the adhesive layer 13. Then, the adhesive layer 13 is exposed.

  With this configuration, since the seal layer 11 is present between the metal wiring pattern layer 15 and the adhesive layer 13, the surface shape of the metal wiring pattern layer 15 is transferred to the seal layer 11, and the adhesive layer No. 13 is not transferred. Therefore, in the etching for forming the metal wiring pattern layer 15, if the part of the metal foil 15 removed for forming the opening 15 </ b> H of the metal wiring pattern layer 15 and the seal layer 11 thereunder are also removed. The adhesive layer 13 is exposed in the opening 15H, but the surface shape of the metal wiring pattern layer 15 is not transferred to the adhesive layer 13.

  Therefore, the exposed adhesive layer 13 does not have a rough surface or the like due to the surface shape of the metal wiring pattern layer 15. Therefore, in such a thin metal wire film 10, the Haze value does not increase due to the adhesive layer 13. As a result, the haze value of the adhesive layer 13 exposed from the opening 15H of the metal wiring pattern layer 15 becomes 10 or less.

  In addition, since the haze value does not increase due to the adhesive layer 13, it is not necessary to adjust the refractive index of the adhesive layer 13 and the refractive index of the transparent film 12, for example, to reduce the haze value. Alternatively, a separate optical adjustment layer may not be laminated in the thin metal wire film 10. That is, in the thin metal wire film 10, it is not necessary to consider the refractive index when selecting the material of the adhesive layer 13 and the transparent film 12, so that not only the degree of freedom in selecting the material is increased, but also the number of members is suppressed.

  Further, it is preferable that the rough surface 15A of the rough surface 15A and the smooth surface 15B which are the front and back surfaces of the metal wiring pattern layer 15 be disposed facing the adhesive layer 13 side.

  In this case, the smooth surface 15B having a glossy feeling is directed to the user's viewing side. Therefore, the visibility of the thin metal wire film 10, in other words, the glare caused by the rough surface 15A of the metal wiring pattern layer 15. The feeling is suppressed, and the non-visibility of the metal wiring pattern layer 15 is increased. In addition, since the rough surface 15A faces the adhesive layer 13, the degree of adhesion of the metal wiring pattern layer 15 to the transparent film 12 is improved.

  Note that the seal layer 11 is preferably formed of a silane coupling agent. More specifically, the silane coupling agent more preferably includes at least one of an aminosilane and a silane having an acid-based functional group.

  Further, it is preferable that a curing catalyst is contained in the silane coupling agent for the purpose of shortening the time for forming a coating film.

  In the above-described method for manufacturing the thin metal wire film 10, one side of the metal foil 15 that is the base of the metal wiring pattern layer 15 is interposed between the metal wiring pattern layer 15 and the adhesive layer 13. A step of applying a chemical 11 serving as a base of the seal layer, a step of bonding the metal foil 15 and the transparent film 12 to the adhesive layer 13 on the transparent film 12 with the surface on which the seal layer 11 is formed facing, It includes a step of patterning the foil 15 and a step of removing a sealing layer exposed from between the remaining metal foils (pattern pieces) 15.

  In the step of removing the seal layer 11, it is preferable that the mask pattern 16 used for patterning is also removed together with the seal layer 11. With this configuration, the production efficiency of the thin metal wire film 10 is increased.

  Hereinafter, the present invention will be described specifically with reference to Examples, but the present invention is not limited to these Examples (see Table 1 below). In addition, each process was implemented by a roll-to-roll process, and a cleaning / rinsing process and a drying process were performed before and after.

[◆ Example 1]
N- (2-aminoethyl) -3-aminopropyltrimethoxysilane (commercially available) is applied to a rough surface of a 1.5 μm-thick ultra-thin copper foil (JXUT-1, manufactured by JX Nippon Mining & Metals Co., Ltd.) with an 18 μm-thick carrier. (Name: A1120, manufactured by Momentive Performance Materials Co., Ltd.) was applied and cured to a dry film thickness of 2 μm to form a seal layer.

  Next, a roll-to-roll apparatus (using a slit die) is used to apply a polyethylene terephthalate (PET) film (film thickness: 100 μm) to the surface of the copper foil on which the seal layer is formed, using a non-yellowing urethane-based film. Adhesive base (trade name: DUX-201-5 (fixed amount 40%, solvent ethyl acetate, manufactured by Dainichi Seika Kogyo) and isocyanate component (trade name: C-99, solid content 100%, dainichi Seika Kogyo Co., Ltd.) Is mixed at a ratio of 15: 0.5, and the resulting mixture is laminated so that the dry film thickness becomes 5 μm, and the copper foil-laminated transparent film is cured at 40 ° C. for 4 days. The solvent component was removed, and the adhesive layer was completely cured.

Then, a photosensitive positive resist (trade name: AZ6112, manufactured by AZ Material Co.) is applied to the obtained copper foil-bonded film under a light-shielding condition so as to have a dry film thickness of 1 μm, and at 100 ° C. X2 minutes. Thereafter, using a stripe-shaped glass mask of Line / Space (L / S) = 5 μm / 200 μm, ultraviolet (UV) light with an integrated light amount of 50 mJ / cm ² was irradiated, and then a developer (trade name: AZ400K, AZ material) The mask pattern was formed by using a product manufactured by the company diluted with pure water at a volume ratio of 4 times.

  Then, the portion not covered with the mask pattern was etched using an etching solution of cupric chloride having a concentration of 35%. Further, the remaining mask pattern and the seal layer exposed from between the pattern pieces (openings) in the pattern were removed using a stripping solution (AZ400K stock solution).

  The line width (line width of the pattern piece) of the metal wiring pattern layer in the thin metal wire film thus obtained was 4.8 μm, and the thickness (height of the pattern piece) was 1.3 μm. In the thin metal wire film 10, the Haze value of the adhesive layer located inside the opening 15 </ b> H of the metal wiring pattern layer 15 was 4.

The measurement of the haze value and the film thickness in all the examples and the comparative examples was carried out using the following apparatus in accordance with the measurement conditions. Haze measurement condition: carried out at a high temperature of 23 ° C. in accordance with JIS7136.
(Measurement device: NDH7000, manufactured by Nippon Denshoku)
-Film thickness measurement conditions: Measured under a condition of 23 ° C. using a step meter.
(Measurement device: Surf CorderET200, manufactured by Kosaka Laboratory)

[◆ Example 2]
In Example 2, 1 part by weight of dibutyldimethoxytin (trade name: SCAT-27, manufactured by Nitto Kasei) as an organotin-based catalyst was added to 100 parts by weight of the silane coupling agent (trade name: A1120) of Example 1. Except for the addition, a thin metal wire film 10 was prepared in the same manner as in Example 1.

  The line width of the metal wiring pattern layer in the thin metal wire film of Example 2 was 4.9 μm, the thickness was 1.4 μm, and the Haze value was 6.

[◆ Example 3]
In Example 3, as in Example 2, an organotin-based catalyst was used, but the type was changed, and the type of the silane coupling agent was also changed. Specifically, 100 parts by weight of 3-aminopropyltrimethoxysilane (trade name: A-1110, manufactured by Momentive Performance Materials) as a silane coupling agent, and dibutyltin salt and a silicate compound as an organotin catalyst 1 part by weight (product name: Neostan U-700, manufactured by Nitto Kasei Co., Ltd.) was added.

  As a result of measuring the thin metal wire film 10 of Example 3 by the same measurement method as described above, the line width of the metal wiring pattern layer in the thin metal wire film was 4.7 μm, the thickness was 1.5 μm, and the haze value was 5. Was.

[◆ Example 4]
In Example 4, the silane coupling agent of Example 1 was replaced with 3-methoxysilylpropylsuccinic anhydride (trade name: X-12-967C, manufactured by Shin-Etsu Chemical Co., Ltd.). A thin metal wire film 10 was produced in the same manner as in Example 1.

  The line width of the metal wiring pattern layer in the thin metal wire film of Example 4 was 4.9 μm, the thickness was 1.3 μm, and the Haze value was 1.

[◆ Example 5]
In Example 5, dibutyldimethoxytin as the organotin catalyst of Example 2 was added to 100 parts by weight of the silane coupling agent 3-methoxysilylpropylsuccinic anhydride (trade name: X-12-967C) of Example 4. (Product name: SCAT-27) A thin metal wire film 10 was produced in the same manner as in Example 4 except that 1 part by weight was added.

The line width of the metal wiring pattern layer in the thin metal wire film of Example 5 was 4.8 μm, the thickness was 1.2 μm, and the Haze value was 4.
[◇ Comparative Example 1]
A thin metal wire film was prepared in the same manner as in Example 1 except that the roughened surface of the copper foil was not sealed with the silane coupling agent.

  The line width of the metal wiring pattern layer in the thin metal wire film of Comparative Example 1 was 4.8 μm, the thickness was 1.2 μm, and the Haze value was 50.

[◇ Comparative Example 2]
A thin metal wire film was prepared in the same manner as in Example 5, except that the roughened surface of the copper foil was not sealed with the silane coupling agent.

  The line width of the metal wiring pattern layer in the thin metal wire film of Comparative Example 2 was 4.7 μm, the thickness was 1.3 μm, and the Haze value was 70.

[■ Review of Table 1]
In Examples 1 to 5, the sealing layer is interposed between the adhesive layer and the metal wiring pattern layer in the thin metal wire film by comparing Examples 1 to 5 with Comparative Examples 1 and 2. Thus, it was confirmed that the Haze value of the adhesive layer located inside the opening of the metal wiring pattern layer was kept low.

10. Thin metal wire film (transparent conductive film)
10P Metal foil bonding film 11 Seal layer, medicine 12 Transparent film 13 Adhesive layer, adhesive 15 Metal wiring pattern layer, metal foil 15A Rough surface 15B Smooth surface (glossy surface)
16 Mask pattern

Claims (8)

On a transparent film, using an adhesive layer, in a thin metal wire film to arrange a metal wiring pattern layer,
A seal layer is disposed between the metal wiring pattern layer and the adhesive layer,
At the opening in the metal wiring pattern layer, the adhesive layer is exposed,
A thin metal wire film in which the rough surface is arranged on the adhesive layer side among the rough surface and the smooth surface that are the front and back surfaces of the metal wiring pattern layer.   The thin metal wire film according to claim 1, wherein a haze value of the adhesive layer exposed from an opening of the metal wiring pattern is 10 or less. The thin metal wire film according to claim 1, wherein the seal layer is formed of a silane coupling agent . The thin metal wire film according to claim 3 , wherein the silane coupling agent contains at least one of aminosilane and silane having an acid-based functional group. The thin metal wire film according to claim 3 , wherein the silane coupling agent contains a curing catalyst. On a transparent film, using an adhesive layer, in a thin metal wire film to arrange a metal wiring pattern layer,
A seal layer is disposed between the metal wiring pattern layer and the adhesive layer,
At the opening in the metal wiring pattern layer, the adhesive layer is exposed,
The seal layer is a thin metal wire film containing a curing catalyst. On a transparent film, using an adhesive layer, in a method for manufacturing a metal thin film film in which a metal wiring pattern is arranged,
A step of applying, on one surface of the metal foil serving as a base of the metal wiring pattern, a chemical serving as a base of a seal layer interposed between the metal fine wire pattern layer and the adhesive layer;
Bonding the metal foil and the transparent film to the adhesive layer on the transparent film, with the surface on which the seal layer is formed facing,
Patterning the metal foil,
Removing the sealing layer exposed from between the remaining metal foils,
A method for producing a thin metal wire film.   The method for manufacturing a metal thin film according to claim 7, wherein in the step of removing the seal layer, the mask pattern used for the patterning is also removed together with the seal layer.

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