JP6631449B2 - Processing equipment - Google Patents

Description

  The present invention relates to a processing device.

  As a device for forming a film on a work in a processing chamber, a work-side conductor electrically connected to the work is brought into contact with a power-supply-side conductor located vertically below in the processing chamber to form a film on a work in the processing chamber. 2. Description of the Related Art An apparatus for forming a film by applying electric power from a conductor to a work via a conductor on the work side is known (for example, Patent Document 1).

JP 2015-94022 A

  In such an apparatus, in a processing chamber after film formation, there is a case where a foreign substance which is agglomerated and solidified by a raw material gas not subjected to film formation exists. Therefore, if the conductor on the work side and the conductor on the power supply side are separated from each other after film formation, foreign matter may fall and adhere to the conductor on the power supply side. Therefore, at the time of the next film formation, if the conductor on the work side contacts the place where the foreign matter has adhered on the conductor on the power supply side, conduction failure occurs between the conductor on the work side and the conductor on the power supply side, There was a possibility that power was not properly applied to the work. Also, when etching is performed in an apparatus having a similar configuration, such a problem may occur because the etched foreign matter may be present in the processing chamber. Therefore, in a processing apparatus that performs film formation or etching on a work, a technique capable of suppressing a conduction failure between the work-side conductor and the power supply-side conductor due to foreign matter generated in the processing chamber has been desired.

  The present invention has been made to solve the above-described problem, and can be realized as the following embodiments.

  According to one embodiment of the present invention, a processing apparatus for performing film formation or etching on a conductive work is provided. The processing apparatus includes: a processing chamber in which the film formation or the etching is performed; a power supply unit-side conductor to which power is applied from a power supply unit outside the processing chamber and at least a part of which is provided in the processing chamber; A power supply side insulator that has an opening that opens on a part of the upper surface side of the unit side conductor and covers the power supply unit side conductor; a conductive holding unit that holds the work; and the holding unit. A work-side conductor electrically connected to the processing chamber, and a transport unit that is located vertically above the processing chamber and is movable in the vertical direction; and the opening is inside the processing chamber. The transfer unit transfers the work-side conductor and the work into the processing chamber when the transfer unit moves vertically downward, and transfers the work-side conductor to the upper surface of the power supply unit-side conductor; By contacting through the opening, The power applied through the power supply unit-side conductor is applied to the work through the holding unit, and when the work moves vertically upward, the work-side conductor is separated from the upper surface and the work-side conductor is separated. Transferring the body and the workpiece out of the processing chamber; the upper surface having a curved surface protruding vertically upward or a corner protruding upward vertically; being separated from the power supply side insulator Have been. With such a processing apparatus, even when foreign matter in the processing chamber falls onto the power supply unit side conductor through the opening, the upper surface of the power supply unit side conductor is convex upward in the vertical direction. Since the power supply unit-side insulator and the upper surface are separated from each other since the power supply unit-side insulator and the upper surface are separated from each other due to having a curved surface or a corner protruding upward in the vertical direction, foreign matter falls from the upper surface into the gap between the power supply-unit-side insulator and the upper surface. Therefore, adhesion of foreign matter to the upper surface of the power supply unit side conductor is suppressed. Therefore, it is possible to suppress the occurrence of conduction failure between the work-side conductor and the power supply-side conductor due to foreign matter generated in the processing chamber.

  The present invention can be realized in various forms other than the above-described processing device. For example, the present invention can be realized in a mode such as a processing method of forming a film or etching on a conductive work.

FIG. 1 is a schematic configuration diagram illustrating a configuration of a processing apparatus according to an embodiment of the present invention. FIG. 2 is a partially enlarged cross-sectional view of the processing apparatus. FIG. 4 is a partially enlarged cross-sectional view showing a state in which a work-side conductor and a power supply-side conductor are in contact with each other. FIG. 4 is a sectional view taken along line 4-4 in FIG. 3; The figure which shows the mode of the foreign material P in the vicinity of the location where a work side conductor and a power supply part side conductor contact. FIG. 9 is an enlarged cross-sectional view of a processing device according to a second embodiment.

A. First embodiment:
FIG. 1 is a schematic configuration diagram illustrating a configuration of a processing apparatus 100 according to an embodiment of the present invention. FIG. 1 shows mutually orthogonal XYZ axes. A Y-axis direction, which is a direction along the Y-axis, indicates a vertical direction, an X-axis direction indicates a horizontal direction, and a Z-axis direction indicates a direction perpendicular to the Y-axis and the X-axis. The + Y direction is vertically upward and the -Y direction is vertically downward. This is the same in the following drawings.

  The processing apparatus 100 is an apparatus that performs film formation or etching on a conductive work W. In the present embodiment, the processing apparatus 100 forms a thin film on the work W by a so-called plasma CVD (Chemical Vapor Deposition) method. In the present embodiment, the work W is a plate-shaped metal plate used as a base material of a fuel cell separator. The processing apparatus 100 forms, for example, a conductive carbon-based thin film on the surface of the work W.

  The processing apparatus 100 includes a processing chamber 10, a power supply unit side conductor 30 to which power is applied from the power supply unit 20, a power supply unit side insulator 40, and a transfer unit 80. In the present embodiment, the processing apparatus 100 further includes a gas supply device 91, an exhaust device 92, a transfer device 75, and a control unit 90.

  The processing chamber 10 is a box-shaped conductive member having an opening 15 above which the work W can be loaded into and out of the processing chamber 10 and having a bottom below. In the processing chamber 10, a film is formed or etched on the work W. The processing chamber 10 includes a supply port 11 for supplying a gas from the gas supply device 91 into the processing chamber 10, an exhaust port 12 for exhausting the processing chamber 10 with the exhaust device 92, and a power supply unit side insulator 40. And an insertion slot 13 into which the. In the present embodiment, the processing chamber 10 is connected to the ground.

  The transport section 80 includes a holding section 71 and a work-side conductor 50. The transport unit 80 is located in the + Y direction of the processing chamber 10 and is movable along the Y-axis direction. In the present embodiment, the transport unit 80 further includes a work-side insulator 60, an insulator 77, a lid 78, and a seal member 76.

  The lid 78 is a plate-shaped conductive member formed so as to cover the opening 15 of the processing chamber 10 when it moves in the −Y direction and comes into contact with the processing chamber 10. An insulator 77 connected to the work-side insulator 60 is provided on the lid 78. The cover 78 is provided with a seal member 76 on the surface in the −Y direction for keeping the airtight inside the processing chamber 10 by contacting the processing chamber 10 when moving in the −Y direction. In this embodiment, the seal member 76 uses an O-ring.

  The holding section 71 is a conductive member that holds the work W. In the present embodiment, the end in the −Y direction of the holding portion 71 has a hook shape, and the holding portion 71 holds the work W by hooking the hook-shaped portion into a hole provided in the work W. I do. The holding section 71 is electrically connected to the work-side conductor 50 in the work-side insulator 60. On the other hand, the holding portion 71 is insulated from the lid 78 by the work-side insulator 60 and the insulator 77.

  The transfer device 75 is a device including an actuator. In the present embodiment, the transport unit 80 is connected to the transport device 75, and can be moved in the Y-axis direction by controlling the actuator of the transport device 75 by a control unit 90 (described later). In the present embodiment, the transport unit 80 can also move in the X-axis direction and the Z-axis direction by the control unit 90 controlling the transport device 75. The transport unit 80 transports the workpiece-side conductor 50 and the workpiece W into the processing chamber 10 when moving in the −Y direction. The transport unit 80 transports the work-side conductor 50 and the work W out of the processing chamber 10 when moving in the + Y direction.

  In the present embodiment, the processing apparatus 100 includes a preliminary chamber 200 in the + Y direction of the processing chamber 10. The preliminary chamber 200 includes a vacuum pump, a heater, and a door. The work W is carried into the preliminary room 200 from the door, and is held by the holding unit 71. In the preliminary chamber 200, before the film formation or the etching is performed in the processing chamber 10, the work W is heated by the heater in a vacuum state, so that moisture and organic substances attached to the work W are removed. In the present embodiment, the transport unit 80 transports the workpiece W from the preliminary chamber 200 into the processing chamber 10 when moving in the −Y direction, and transports the workpiece W from the processing chamber 10 to the preliminary chamber 200 when moving in the + Y direction. Transport to

The gas supply device 91 supplies a carrier gas and a source gas into the processing chamber 10 through the supply port 11. In the present embodiment, the gas supply device 91 supplies, for example, a nitrogen (N ₂ ) gas or an argon (Ar) gas as a carrier gas, and supplies, for example, a pyridine (C ₅ H ₅ N) gas as a source gas. Further, the gas supply device 91 can supply an argon gas as an etching gas.

  The exhaust device 92 is a device that can exhaust gas in the processing chamber 10 through the exhaust port 12. The exhaust device 92 includes, for example, a rotary pump, a diffusion pump, a turbo molecular pump, and the like. The exhaust device 92 exhausts the inside of the processing chamber 10 via the exhaust port 12 to evacuate the vacuum chamber before film formation or etching is performed.

  The power supply unit 20 is a device provided outside the processing chamber 10. The power supply unit 20 generates an electric field for converting the raw material gas and the like supplied into the processing chamber 10 into plasma. In the present embodiment, the power supply unit 20 applies a power of −3 kV to the power supply unit-side conductor 30 during film formation or etching. The electric power applied to the power supply unit side conductor 30 is applied to the work W via the power supply unit side conductor 30 and the work side conductor 50.

  The control unit 90 controls the operation of the entire processing device 100. Control unit 90 includes a CPU and a memory. The CPU controls the processing device 100 by executing a program stored in the memory. This program may be recorded on various recording media. In the present embodiment, the control unit 90 controls the transfer device 75 to move the transfer unit 80 in the −Y direction, thereby loading the work W into the processing chamber 10 and processing the cover 78 (seal member 76). The processing chamber 10 is kept airtight by contacting the processing chamber 10. Further, the control unit 90 controls the exhaust unit 92 to evacuate and evacuate the processing apparatus 100, controls the gas supply unit 91 to supply the source gas and the like into the processing chamber 10, and controls the power supply unit 20 to operate. Under the control, power is applied to the work W via the power supply unit side conductor 30, the work side conductor 50, and the holding unit 71.

  Hereinafter, the work-side conductor 50, the work-side insulator 60, the power-supply-side conductor 30, and the power-supply-side insulator 40 will be described with reference to a partially enlarged cross-sectional view of the processing apparatus 100.

  FIG. 2 is a partially enlarged cross-sectional view of the processing apparatus 100. FIG. 2 is an enlarged cross-sectional view of the vicinity of the work-side insulator 60 and the power supply-side insulator 40 shown in FIG. FIG. 2 shows the work-side conductor 50, the work-side insulator 60, the power-supply-side conductor 30, and the power-supply-side insulator 40.

  The work-side conductor 50 is a conductive member that is electrically connected to the holding unit 71 (FIG. 1). In the present embodiment, the work-side conductor 50 is composed of a first conductor 57, a second conductor 55 disposed inside the first conductor 57, and a spring 53. The first conductor 57 is formed to branch off from the holding section 71 and is electrically connected to the work W. The second conductor 55 is electrically connected to the first conductor 57. The spring 53 has conductivity, and absorbs an impact when the second conductor 55 contacts the power supply unit side conductor 30.

  The work-side insulator 60 is a member that covers the work-side conductor 50 and the holding unit 71 (FIG. 1). The hook-shaped portion of the holding portion 71 is exposed from the work-side insulator 60 (FIG. 1). The work-side insulator 60 includes an opening 61 that opens in the −Y direction. From the opening 61, a tip 51, which is an end in the −Y direction of the work-side conductor 50, is exposed in the −Y direction.

  The power supply unit side conductor 30 is a conductive member at least partially provided in the processing chamber 10. The power supply unit side conductor 30 has an upper surface 31 which is a surface in the + Y direction. In the present embodiment, the power supply unit-side conductor 30 has a distal end portion 32 and a main body portion 34, and power is applied from the power supply unit 20 connected to the main body portion 34 during film formation or etching. In the present embodiment, the length of the distal end portion 32 in the Y-axis direction is shorter than the length of the main body portion 34 in the Y-axis direction. Further, in the present embodiment, the distal end portion 32 is located at the position of the opening portion 41, and the position R of the lower end of the distal end portion 32 is separated from the bottom surface 45 of the power supply side insulator 40.

The power-source-side insulator 40 has an opening 41 that opens on a part of the upper surface 31 of the power-source-side conductor 30 and is an insulator that covers the power-source-side conductor 30. The opening 41 is arranged in the processing chamber 10. In the present embodiment, the opening 41 is opened on the upper surface 31 of the distal end portion 32 of the power supply unit side conductor 30. In the present embodiment, the power-source-side insulator 40 is configured by connecting the first insulator 43 and the second insulator 44 that covers the main body 34 of the power-supply-side conductor 30. The first insulator 43 is a cylindrical insulator having an end in the + Y direction and an end in the + X direction, and having an L-shaped cross-section extending in the + Y and + X directions. The second insulator is a cylindrical insulator extending along the X-axis direction. An opening 41 is provided at an end of the first insulator 43 in the + Y direction, and an end of the second insulator in the -X direction is fitted into an end of the first insulator 43 in the + X direction. . The first insulator 43, the second insulator 44, the insulator 77, and the work-side insulator 60 are formed of, for example, ceramics such as alumina (Al ₂ O ₃ ) or silicon dioxide (SiO ₂ ). Can be.

  FIG. 3 is a partially enlarged cross-sectional view showing a state in which the work-side conductor 50 and the power supply unit-side conductor 30 are in contact with each other. The work-side conductor 50 and the power supply unit-side conductor 30 come into contact with each other when the transport unit 80 moves in the −Y direction. The transport unit 80 transports the work-side conductor 50 and the work W into the processing chamber 10 when moving in the −Y direction, and transfers the work-side conductor 50 to the upper surface 31 of the power supply unit-side conductor 30 through the opening 41. By making contact, the electric power applied via the power supply unit side conductor 30 is applied to the work W via the holding unit 71. When moving in the + Y direction, the transfer unit 80 transfers the work-side conductor 50 and the work W to the outside of the processing chamber 10 by separating the work-side conductor 50 from the upper surface 31. In the present embodiment, when the lid 78 (seal member 76) contacts the processing chamber 10, the tip 51 of the work-side conductor 50 contacts the upper surface 31 of the tip 32 of the power supply-side conductor 30. Thus, the dimensions of each part are set.

  FIG. 3 further shows the width W1, the widths W2 and W3, and the distance L1, the distance L2 and the distance L3. In the present embodiment, a gap having a width W1 is provided between the power supply unit side insulator 40 (the first insulator 43) and the work side insulator 60. The width W1 is 1.5 mm or less. The distance L1 along the Y-axis direction of the gap portion having the width W1 is about 3.0 mm or more. By doing so, the entry of plasma into the gap having the width W1 is suppressed, and the work-side insulator 60 and the work-side conductor 50 are in contact with each other, and the power supply unit-side conductor 30 and the power supply unit-side insulator are not contacted. Intrusion of the plasma into the location where 40 contacts is suppressed. Further, even when the insulating foreign matter generated in the processing chamber 10 falls into the opening 41, the insulating foreign matter may be located at a place where the foreign matter contacts the power supply unit side conductor 30 or the foreign matter and the work side conductor 50. Intrusion of plasma is suppressed. As a result, occurrence of abnormal discharge in these locations is suppressed. In the present embodiment, a gap having a width W2 is provided between the work-side insulator 60 and the work-side conductor 50 (the first conductor 57). The width W2 is larger than 0 mm and 1.5 mm or less. The distance L2 along the Y-axis direction of the gap having the width W2 is about 3.0 mm or more. By doing so, even if the plasma enters the gap portion having the width W1, the plasma is extended to the position where the work-side insulator 60 contacts the work-side conductor 50 (the first conductor 57). Is suppressed, so that abnormal discharge is suppressed from being generated at a position where the work-side insulator 60 and the work-side conductor 50 are in contact with each other. Further, in the present embodiment, a gap having a width W3 is provided between the first insulator 43 and the second insulator 44 and the power supply unit side conductor 30. The width W3 is larger than 0 mm and 1.5 mm or less. Further, a distance L3 along the X-axis direction of the gap portion having the width W3 is about 3.0 mm or more. By doing so, even if the plasma invades into the gap portion having the width W1, the plasma can penetrate into the contact portion between the power supply unit side conductor 30 and the power supply unit side insulator 40. Since this is suppressed, the occurrence of abnormal discharge at the place where the power supply unit side conductor 30 and the power supply unit side insulator 40 are in contact is further suppressed. The above values are merely examples, and the values of the width W1, the width W2, and the width W3, and the values of the distance L1, the distance L2, and the distance L3 are set to the width and the distance (dimension) that can suppress the above-described plasma intrusion. It should just be.

  FIG. 4 is a sectional view taken along line 4-4 in FIG. FIG. 4 shows the work-side conductor 50, the power-supply-side conductor 30, and the power-supply-side insulator 40. As shown in FIG. 4, the upper surface 31 of the power supply unit side conductor 30 located in the opening 41 has a curved surface that is convex toward the + Y direction. The upper surface 31 at the position of the opening 41 is a surface when the power supply unit side conductor 30 is viewed from the + Y direction of the opening 41. As shown in FIG. 4, the cross-sectional shape of the distal end portion 32 at the position of the opening 41 is such that the upper surface 31 is arc-shaped and the lower surface is flat. The upper surface 31 located at the opening 41 does not have a flat surface. Further, the power supply unit side insulator 40 and the upper surface 31 are separated from each other. In the present embodiment, as shown in FIG. 4, the gap between the upper surface 31 and the power supply unit-side insulator 40 at the distal end portion 32 of the power supply unit-side conductor 30 is formed between the main unit 34 and the power supply unit-side insulator 40. The distal end portion 32 is configured to be smaller in cross-sectional shape than the main body portion 34. In the present embodiment, as shown in FIG. 4, the distal end portion 51 of the work-side conductor 50 is in contact with the upper surface 31 at a position shifted in the + Z direction from the position Q of the upper end of the upper surface 31 in the + Y direction. . Such a shift occurs because the transport unit 80 has a transport error in the X-axis direction and the Z-axis direction. Depending on the transport error, the distal end portion 51 of the work-side conductor 50 may come into contact with the upper surface 31 at the position Q, or may come into contact with a portion shifted from the position Q in the −Z direction.

  In the processing apparatus 100 described above, when the work W is held by the holding unit 71 of the transfer unit 80, the control unit 90 controls the transfer device 75 to move the transfer unit 80 in the −Y direction, and The body 50 is brought into contact with the upper surface 31 of the power supply unit side conductor 30 through the opening 41, and the lid 78 (seal member 76) is brought into contact with the processing chamber 10. Next, the control unit 90 controls the exhaust unit 92 to exhaust the inside of the processing chamber 10, controls the gas supply unit 91 to supply the source gas or the etching gas into the processing chamber 10, and controls the power supply unit 20. Then, power is applied to the work W via the power supply unit side conductor 30, the work side conductor 50, and the holding unit 71 to perform film formation or etching. The control unit 90 controls the gas supply device 91 to stop the supply of the raw material gas and the like, and controls the power supply unit 20 to stop the application of the electric power to terminate the film formation or the etching. Next, the control unit 90 controls the exhaust device 92 to restore the pressure in the processing chamber 10, controls the transfer device 75 to move the transfer unit 80 in the + Y direction, and moves the work-side conductor 50 from the upper surface 31. The work-side conductor and the work W are transported to the outside of the processing chamber 10 while being separated from each other. As described above, the film formation or the etching by the processing apparatus 100 is performed.

The effects of the processing apparatus 100 of the present embodiment described above will be described with reference to the drawings.
FIG. 5 is a diagram illustrating a state of the foreign matter P in the vicinity of a position where the work-side conductor 50 and the power supply unit-side conductor 30 come into contact with each other. In the processing apparatus 100, in the processing chamber 10, a foreign substance which is not subjected to film formation and is solidified by agglomeration, a foreign substance removed from the work W by etching, or a work side due to a transfer deviation of the transfer unit 80. There is a case where a foreign substance or the like generated by the contact between the insulator 60 and the power supply unit side insulator 40 and the work side insulator 60 or the power supply unit side insulator 40 is shaved. These foreign substances P are insulating or conductive foreign substances having different resistance values from the work-side conductor 50 and the power supply unit-side conductor 30. Therefore, after the film formation or etching, if the foreign matter P falls to the power supply unit side conductor 30 through the opening 41 when the transport unit 80 moves in the + Y direction, the work side conductor 50 and the work side conductor 50 will be connected at the next film formation or etching. A conduction failure may occur between the power supply side conductor and the power supply to the work W. However, in the processing apparatus 100 of the present embodiment, even when the foreign matter P in the processing chamber 10 falls to the power supply unit side conductor 30 through the opening 41, the upper surface 31 of the power supply unit side conductor 30 Since the power supply unit-side insulator 40 and the upper surface 31 are separated from each other as having a curved surface protruding upward in the vertical direction, the foreign matter P Since the particles fall into the gap between the insulator 40 and the upper surface 31, the attachment of foreign matter to the upper surface 31 of the power supply unit side conductor 30 is suppressed. Therefore, it is possible to suppress the occurrence of conduction failure between the work-side conductor 50 and the power supply unit-side conductor 30 due to foreign matter generated in the processing chamber 10.

  In the processing apparatus 100 of the present embodiment, the position R of the lower end of the power supply unit side conductor 30 and the bottom surface 45 of the power supply unit side insulator 40 are separated at the position of the opening 41. Therefore, the foreign matter P dropped through the opening 41 can be accumulated between the lower end position R and the bottom surface 45. The foreign matter P deposited on the bottom surface 45 can be removed by cleaning the power supply unit side insulator 40 before reaching the upper surface 31 of the power supply unit side conductor 30. Therefore, the number of times of cleaning can be reduced as compared with the case where the position R of the lower end of the power supply unit side conductor 30 and the bottom surface 45 of the power supply unit side insulator 40 are not separated, and the film formation of the work W can be performed. Alternatively, the labor and cost for etching can be reduced.

  In the processing apparatus 100 according to the present embodiment, the gap between the upper surface 31 and the power supply unit insulator 40 at the distal end portion 32 of the power supply unit conductor 30 is larger than the gap between the main body unit 34 and the power supply unit insulator 40. The distal end portion 32 is configured such that its cross-sectional shape is smaller than that of the main body portion 34. Therefore, the foreign matter P can be more accumulated in the gap between the upper surface 31 of the distal end portion 32 of the power supply unit side conductor 30 and the power supply unit side insulator 40.

  If the upper surface 31 of the power supply unit side conductor 30 does not have a curved surface that is convex toward the + Y direction, for example, even if the upper surface 31 at the position of the opening 41 is a flat surface, By moving the workpiece 80 along the X direction and bringing the work-side conductor 50 into contact with a portion of the power-supply-side conductor 30 where foreign matter P is not deposited, the work-side conductor 50 and the power-supply-side conductor 30 May be electrically connected. However, in such a case, it is preferable to increase the area of the plane in order to secure a place where the work-side conductor 50 and the power supply unit-side conductor 30 are in contact with each other. It may be preferable to make the body 30 and the power supply side insulator 40 large. On the other hand, in the processing apparatus 100 of the present embodiment, since the foreign matter P is prevented from being deposited on the upper surface 31 of the power supply unit side conductor 30 at the position of the opening 41, the upper surface 31 at the position of the opening 41 is reduced. The power-supply-side conductor 30 and the power-supply-side insulator 40 can be made smaller than in the case of a flat surface.

B. Second embodiment:
FIG. 6 is an enlarged sectional view of the processing apparatus 100a according to the second embodiment. FIG. 6 shows an enlarged view of the vicinity of a place where the work-side conductor 50 and the power supply-side conductor 30a are in contact with each other. In the processing apparatus 100a of the present embodiment, the upper surface 31a with which the work-side conductor 50 is in contact through the opening 41 has a corner 33a that is convex in the + Y direction. In the present embodiment, the angle of the corner 33a is about 60 °. As shown in FIG. 6, the tip portion 32a of the power supply section side conductor 30a has a triangular shape including a corner 33a that is convex in the + Y direction. Also in the processing apparatus 100a of the present embodiment, as shown in FIG. 6, the power supply unit side insulator 40 and the upper surface 31a are separated. Therefore, the foreign matter P in the processing chamber 10 moves downward in the vertical direction as indicated by a dotted arrow in FIG. 6, and passes through the gap between the power supply unit-side insulator 40 and the upper surface 31 a to lower the power supply unit-side insulator 40. To fall. The other configuration of the processing apparatus 100a is the same as that of the processing apparatus 100 of the above-described first embodiment, and a description thereof will not be repeated. Even with such a processing apparatus 100a, effects similar to those of the above-described first embodiment can be obtained.

C. Modification:
In the various embodiments described above, the length of the main body 34 of the power supply unit side conductor 30 in the Y-axis direction may be the same as the length of the distal end 32. Further, in the various embodiments described above, the power supply unit side conductor 30 may not be configured such that the shape of the distal end portion 32 and the shape of the main body portion 34 are different. For example, the main body 34 of the power-supply-side conductor 30 has a curved surface that protrudes in the + Y direction or a corner 33a that protrudes in the + Y direction on the upper surface 31, similarly to the tip 32. Alternatively, the position R at the lower end of the main body 34 and the bottom surface 45 of the power supply unit side insulator 40 may be separated from each other.

  In the above-described various embodiments, the position R of the lower end of the power supply unit side conductors 30 and 30a and the bottom surface 45 of the power supply unit side insulator 40 are separated. On the other hand, the lower end position R and the bottom surface 45 do not have to be separated from each other.

  In the above-described first embodiment, the upper surface 31 located at the opening 41 has a curved surface that is convex in the + Y direction, and may be separated from the power-source-side insulator 40, and the opening shown in FIG. The cross-sectional shape of the power-supply-side conductor 30 (the distal end portion 32) having the upper surface 31 located in the portion 41 may be another shape. The cross-sectional shape of the distal end portion 32 may be, for example, a circular shape, a semicircular shape, or an elliptical shape.

  In the above-described second embodiment, the angle of the corner 33a protruding in the + Y direction on the upper surface 31a shown in FIG. 6 may be smaller, such as 50 °, 40 °, 30 °, or the like. By doing so, the foreign matter P may be encouraged to fall to the lower part in the vertical direction. Further, in the above-described second embodiment, the upper surface 31a located at the opening 41 has a corner 33a that is convex toward the + Y direction, and may be separated from the power supply side insulator 40. The cross-sectional shape of the power-supply-side conductor 30a (the tip 32a) having the upper surface 31a located in the opening 41 shown in FIG. 6 may be another shape. The cross-sectional shape of the distal end portion 32a may be, for example, an arc-shaped bottom surface or a shape having a corner 33a whose bottom surface is convex in the −Y direction.

  In the various embodiments described above, the end in the −Y direction of the holding portion 71 has a hook shape. On the other hand, the end in the −Y direction of the holding unit 71 may have another shape as long as it can hold the work W, and may have a clip shape, for example.

  In the various embodiments described above, the processing apparatuses 100 and 100a perform film formation or etching by the plasma CVD method. On the other hand, the processing apparatuses 100 and 100a may form a film on the work W by another method such as a physical vapor deposition (PVD) method. For example, the processing apparatuses 100 and 100a may include a mechanism for passing particles obtained by evaporating a film forming material through plasma, and perform film forming on W by an ion plating method. Further, the processing apparatuses 100 and 100a are provided with a mechanism for causing particles having high energy to collide with a film-forming material (target), and a film may be formed on W by a sputtering method.

  The present invention is not limited to the above-described embodiments and modified examples, and can be implemented with various configurations without departing from the spirit thereof. For example, the technical features in the embodiments and modifications corresponding to the technical features in each embodiment described in the Summary of the Invention section may be used to solve some or all of the above-described problems, or In order to achieve some or all of the effects, replacements and combinations can be made as appropriate. Elements other than the elements described in the independent claims among the constituent elements in the above-described embodiment and each modified example are additional elements and can be omitted as appropriate.

DESCRIPTION OF SYMBOLS 10 ... Processing chamber 11 ... Supply port 12 ... Exhaust port 13 ... Insertion port 15 ... Opening 20 ... Power supply part 30, 30a ... Power supply part side conductor 31, 31a ... Top surface 32, 32a ... Tip part 33a ... Corner part 34 ... Body part 40 ... Power supply part side insulator 41 ... Opening part 43 ... First insulator 44 ... Second insulator 45 ... Bottom 50 ... Work side conductor 51 ... Tip part 53 ... Spring 55 ... Second conductor 57 ... Second 1 Conductor 60 Workpiece Insulator 61 Opening 71 Holding Unit 75 Transfer Device 76 Sealing Member 77 Insulator 78 Cover 80 Transfer Unit 90 Control Unit 91 Gas Supply Device 92 Exhaust Device 100 , 100a processing apparatus 200 preliminary room L1 distance L2 distance L3 distance P foreign matter Q position R position W work W1 width W2 width W3 width

Claims (1)

A processing apparatus that performs film formation or etching on a conductive work,
A processing chamber in which the film formation or the etching is performed,
Power is applied from a power supply unit outside the processing chamber, a power supply unit-side conductor at least partially provided in the processing chamber,
A power-supply-side insulator that has an opening that opens on a part of the upper surface of the power-supply-side conductor, and covers the power-supply-side conductor;
It has a conductive holding portion for holding the work, and a work-side conductor electrically connected to the holding portion, and is located vertically above the processing chamber and is movable along the vertical direction. And a transport unit,
The opening is disposed in the processing chamber,
The transfer unit transfers the work-side conductor and the work into the processing chamber when the transfer unit moves vertically downward, and brings the work-side conductor into contact with the upper surface of the power supply unit-side conductor through the opening. By applying the power applied via the power supply unit side conductor to the work through the holding unit, when moving vertically upward, the work side conductor is separated from the upper surface and Transporting the work-side conductor and the work outside the processing chamber,
The upper surface is
It has a curved surface that is convex upward in the vertical direction or a corner that is convex upward in the vertical direction,
Separated from the power supply unit side insulator,
Processing equipment.

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