JP2018048351A - Film deposition apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a film deposition apparatus for suppressing the occurrence of an abnormal discharge, and the slip of a foreign substance from an electrode and adhesion of the same to a work-piece.SOLUTION: A film deposition apparatus 200 comprises: a film deposition vessel 100 having a first mold 110 and a second mold 120; an insulating member 30 arranged between a first plane portion 111 of the first mold and a second mold for contacting a work-piece while the work-piece being spaced from the first plane portion; a bias electric power applying part 70 and a first electrode 75 arranged in a first recessed part 114; a self bias voltage cutting circuit 41 capable of cutting a self bias voltage to rise at the first electrode; a gas supply device 80; and a control part 95. The distance between a contact point of the work W and the insulating member and the first plane portion is shorter than the distance between the work-piece and a bottom part of a first recess part. A control part applies a bias electric power to the work-piece, when an etching gas is supplied, and a high frequency electric power is applied to the first electrode so that a self bias voltage is generated at the first electrode, but the self bias voltage is not generated at the first electrode when the material gas is supplied.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a film forming apparatus.

  An apparatus for forming a film on a substrate by plasma CVD is known. In Patent Document 1, a holder for holding a substrate in a film formation container and an antenna are provided, a bias voltage is applied to the holder from a bias power source, and a high frequency is applied to the antenna from a high frequency power source to perform film formation. An apparatus is described. In this apparatus, the film forming container and the bias power source are insulated by an insulating member.

JP 2013-206652 A

  In the device described in Patent Document 1, since the electric field concentrates at a location where the voltage line connected from the bias power source to the holder and the insulating member are in contact with each other, there is a possibility that abnormal discharge may occur when plasma enters the location. Further, there is a possibility that the foreign matter attached to the antenna as the high frequency electrode peels off and adheres to a sealing member for keeping the substrate and the film formation container airtight. Therefore, there has been a demand for a technique capable of suppressing the occurrence of such an abnormal discharge in an apparatus for forming a film by the plasma CVD method and preventing the foreign matter attached to the electrode from peeling off and attaching to the workpiece.

  The present invention has been made to solve the above-described problems, and can be realized as the following forms.

(1) According to one aspect of the present invention, there is provided a film forming apparatus for forming a film on a part of a work by a plasma CVD method. The film forming apparatus includes a first mold including a first recess and a first flat portion disposed around the first recess, and a second mold disposed to face the first mold. A film forming container having a mold; disposed between the first flat portion of the first mold and the second mold, and a portion to be processed of the workpiece in a space in the first recess. And an insulating member that contacts the workpiece in a state where the workpiece is spaced from the first plane portion; a bias power application portion that applies bias power to the workpiece; and a first disposed in the first recess portion A high-frequency power applying unit that applies high-frequency power to the first electrode; a high-frequency power connected to the high-frequency power applying unit and the first electrode, and from the high-frequency power applying unit to the first electrode Self-bias generated in the first electrode when a voltage is applied A self-bias voltage cut circuit capable of cutting a voltage; a gas supply device; a control unit; and a distance between a contact point between the work and the insulating member and the first plane part, The control unit controls the bias power application unit when the etching gas is supplied into the film formation container by controlling the gas supply device. Bias power is applied to the workpiece, the high frequency power application unit is controlled to apply high frequency power to the first electrode, and the self bias voltage cut circuit is controlled to apply a self bias voltage to the first electrode. When the source gas for film formation is supplied to at least a part of the workpiece into the film formation container by controlling the gas supply device, the bias power application unit is controlled in advance. Bias power is applied to the workpiece, the high-frequency power application unit is controlled to apply high-frequency power to the first electrode, and the self-bias voltage cut circuit is controlled to generate a self-bias voltage on the first electrode. I won't let you. With such a film forming apparatus, it is possible to suppress plasma from entering the space formed by the workpiece and the first flat portion from the first recess, and therefore the amount of plasma at the contact point between the workpiece and the insulating member And the occurrence of abnormal discharge can be suppressed. In addition, when the control unit controls the gas supply device to supply the etching gas into the film formation container, the control unit controls the bias power application unit to apply the bias power to the workpiece and controls the high frequency power application unit. Since the high-frequency power is applied to the first electrode and the self-bias voltage cut circuit is controlled to generate the self-bias voltage on the first electrode, it is possible to effectively remove the foreign matter adhering to the first electrode. it can. In addition, when the control unit controls the gas supply device to supply the source gas into the film formation container, the control unit controls the bias power application unit to apply the bias power to the workpiece and controls the high frequency power application unit. Since the high-frequency power is applied to the first electrode and the self-bias voltage cut circuit is controlled to prevent the self-bias voltage from being generated in the first electrode, the power applied to the workpiece during film formation is generated in the first electrode. Since the reduction by the self-bias voltage is suppressed, film formation can be performed effectively. In addition, since no self-bias voltage is generated in the first electrode during film formation, it is possible to suppress foreign matter from adhering to the first electrode during film formation. Therefore, it can suppress that the foreign material adhering to the 1st electrode peels off, and adheres to a workpiece | work.

  The present invention can also be realized in various forms other than the film forming apparatus described above. For example, a method of forming a film on a part of a workpiece by plasma CVD, a control method and control device of a film forming apparatus, a computer program for realizing the function of those devices or methods, and a record recording the computer program It can be realized in the form of a medium or the like.

1 is a schematic cross-sectional view showing a configuration of a film forming apparatus according to a first embodiment of the present invention. The disassembled perspective view of the film-forming apparatus. The schematic block diagram which shows an example of the self-bias voltage cut circuit with which the film-forming apparatus is provided. The elements on larger scale of the film-forming apparatus. FIG. 5 is a process diagram illustrating film formation processing by a film formation apparatus. The figure which shows the result of experiment. The figure which shows the film-forming apparatus in the modification 3 of 1st Embodiment. The figure which shows the film-forming apparatus in the modification 4 of 1st Embodiment. The figure which shows the film-forming apparatus in the modification 5 of 1st Embodiment. The figure which shows the film-forming apparatus in the modification 6 of 1st Embodiment. The figure which shows the film-forming apparatus in the modification 7 of 1st Embodiment. The partial schematic sectional drawing which shows partially the structure of the film-forming apparatus in 2nd Embodiment.

A. First embodiment:
A1. Configuration of film deposition system:
FIG. 1 is a schematic cross-sectional view showing a configuration of a film forming apparatus 200 in the first embodiment of the present invention. FIG. 2 is an exploded perspective view of the film forming apparatus 200. FIG. 3 is a schematic configuration diagram illustrating an example of the self-bias voltage cut circuit 41 included in the film forming apparatus 200. 1 and 2 show XYZ axes orthogonal to each other. The Y-axis direction indicates a vertical direction, the X-axis direction indicates a horizontal direction, and the Z-axis direction indicates a direction perpendicular to the Y-axis and the X-axis. This also applies to the subsequent drawings.

  The film forming apparatus 200 is an apparatus that forms a thin film on the processing target portion 10A of the conductive workpiece W by a so-called plasma CVD (Chemical Vapor Deposition) method. In the present embodiment, the workpiece W includes a workpiece 10 and a masking member 20. In this embodiment, the to-be-processed target object 10 is a plate-like metal used as a base material for a fuel cell separator. The film forming apparatus 200 forms, for example, a conductive carbon-based thin film on the processing target portion 10A of the processing target object 10.

  The film forming apparatus 200 includes a film forming container 100, an insulating member 30, a bias power application unit 70, a first electrode 75, a high frequency power application unit 70r, a self-bias voltage cut circuit 41, and a gas supply device 80. And a control unit 95. The film forming apparatus 200 further includes an opening / closing device 50, a transport device 55, an exhaust device 90, a pallet 130, a seal member 60, a second electrode 76, and a self-bias voltage cut circuit 42. The film forming apparatus 200 uses a power (DC (Direct Current) power) applied by the bias power application unit 70 and a power (RF (Radio Frequency) power) applied by the high frequency power application unit 70 r to apply a workpiece. This is an apparatus capable of performing a film forming process on the W processing target portion 10A. In FIG. 2, the first electrode 75, the second electrode 76, the self-bias voltage cut circuits 41 and 42, the switching device 50, the transport device 55, the bias power application unit 70 and the power introduction unit thereof. 71, the high-frequency power application unit 70r and its power introduction units 71r and 72r, the gas supply device 80 and its supply port 81, the exhaust device 90 and the exhaust port 91, and the control unit 95 are not shown. .

  The film forming container 100 is a separable metal container. The film forming container 100 includes a first mold 110 and a second mold 120 disposed to face the first mold 110.

  The first mold 110 includes a first depression 114 and a first flat portion 111 disposed around the first depression 114. The first recess 114 is recessed in a direction away from the workpiece W. In the present embodiment, the first recess 114 is recessed upward (+ Y direction) when viewed from the processing target portion 10A on the upper surface side of the workpiece W. The first recess 114 includes a side portion 112 and a bottom portion 113. A first electrode 75 is disposed in the first recess 114. The first electrode 75 is disposed on the bottom 113 side in the first recess 114. In this embodiment, the connection location of the 1st hollow part 114 and the 1st plane part 111 is located in the same YZ plane shape as the edge part of 10 A of process target parts.

  The second mold 120 has a second depression 124 that is depressed downward (−Y direction) when viewed from the processing target portion 10 </ b> A on the lower surface side of the workpiece W, and a second depression disposed around the second depression 124. A plane part 121. The second depression 124 includes a side part 122 and a bottom part 123. The second plane part 121 is arranged at a part corresponding to the first plane part 111 of the first mold 110. A second electrode 76 is disposed in the second depression 124. The second electrode 76 is disposed on the bottom 123 side in the second depression 124. In this embodiment, the connection location of the 2nd hollow part 124 and the 2nd plane part 121 is located in the edge part of 10 A of to-be-processed parts, and the same YZ plane shape. In the present embodiment, the first plane part 111 and the second plane part 121 are parallel to the XZ plane.

  The first mold 110 and the second mold 120 include a supply port 81 for supplying gas from the gas supply device 80 into the film formation container 100 and an exhaust for exhausting the film formation container 100 by the exhaust device 90. And a mouth 91. The supply port 81 and the exhaust port 91 are provided with valves that can be opened and closed. The first mold 110 includes a power introduction part 71 r for applying high frequency power to the first electrode 75. The second mold 120 includes a power introduction part 72 r for applying high frequency power to the second electrode 76. The insulating member 35 is electrically insulated between the power introduction part 71r and the first mold 110 and between the power introduction part 72r and the second mold 120. The second mold 120 includes a power introduction unit 71 for applying bias power to the workpiece W. The second mold 120 and the power introduction part 71 are electrically insulated by the insulating member 35. In the present embodiment, the distance between the first electrode 75 and the first mold 110 and the distance between the second electrode 76 and the second mold 120 are shorter than the distance of the sheath.

  In the present embodiment, the film forming container 100 is connected to the ground (ground potential). In the film forming container 100, the workpiece W is separated from the first flat surface portion 111, and the processing target portion 10 </ b> A of the work W is directed toward the space in the first hollow portion 114 in a state where the film forming container 100 is closed. It has been.

  The masking member 20 is a member that covers the non-processing target portion 10 </ b> B of the processing target object 10. In other words, the masking member 20 is a member that opens in the processing target portion 10 </ b> A of the processing target object 10. In the present embodiment, the masking member 20 includes an upper masking member 21 and a lower masking member 22. The upper masking member 21 is disposed on the first mold 110 side of the object to be processed 10. The lower masking member 22 is disposed on the second mold 120 side of the object to be processed 10. In the present embodiment, the lower masking member 22 supports the object to be processed 10. The masking member 20 is formed of a conductive member. The object to be processed 10 and the masking member 20 are electrically connected by contact.

The insulating member 30 is disposed between the first flat portion 111 of the first mold 110 and the second mold 120. In the present embodiment, the insulating member 30 is disposed between the first plane part 111 and the second plane part 121. The insulating member 30 contacts the workpiece W in a state where the processing target portion 10 </ b> A on the upper surface side of the workpiece W is directed to the space in the first recess 114 and the workpiece W is separated from the first flat surface 111. In the present embodiment, the insulating member 30 directs the processing target portion 10 </ b> A on the lower surface side of the workpiece W toward the space in the second depression 124, and the workpiece W is separated from the second plane portion 121. , Contact the workpiece W. In the present embodiment, the insulating member 30 supports the lower masking member 22 by contacting the lower masking member 22 of the workpiece W. The insulating member 30 is made of ceramics such as alumina (Al ₂ O ₃ ) or silicon dioxide (SiO ₂ ), for example.

  The pallet 130 is a metal plate member. The pallet 130 is also a member that conveys the workpiece W into the film forming container 100. On the pallet 130, the insulating member 30, the lower masking member 22, the workpiece 10 and the upper masking member 21 are stacked in this order in the + Y direction. In the present embodiment, the pallet 130 has a ground potential.

  The seal member 60 (61, 62) is disposed between the first flat portion 111 of the first mold 110 and the second mold 120. The seal member 60 is a member for maintaining airtightness in the film forming container 100. The seal member 60 is an insulating member, and is a rubber annular member in the present embodiment. In the present embodiment, the seal member 60 uses an O-ring. In the present embodiment, the seal member 61 is fitted in a groove provided in the first mold 110. The seal member 62 is fitted in a groove provided in the second mold 120.

  The opening / closing device 50 is a device for opening and closing the film forming container 100. In the present embodiment, the opening / closing device 50 moves the first mold 110 in the + Y direction to open the film forming container 100, and moves the first mold 110 in the −Y direction to close the film forming container 100.

  The transport device 55 is a device for transporting the pallet 130 into the film forming container 100 and transporting the pallet 130 out of the film forming container 100. In the present embodiment, the transfer device 55 is in contact with the end portion 130t of the pallet 130, and the film forming container 100 is opened, the pallet 130, the insulating member 30 loaded on the pallet 130, the masking member 20, the object to be processed. The object 10 is transferred into the film forming container 100. Further, the transport device 55 moves the pallet 130 transported downward to install the pallet 130 on the second mold 120 via the seal member 62. Further, the transfer device 55 can also transfer the pallet 130 moved upward along the XZ plane and transfer it to the outside of the film forming container 100.

  The bias power application unit 70 is a device for generating plasma. The bias power application unit 70 applies bias power to the workpiece W. The bias power application unit 70 generates an electric field for converting the source gas or the like supplied into the film forming container 100 into plasma. In the present embodiment, the power introduction unit 71, the workpiece 10 and the masking member 20 are cathodes, and the first mold 110, the second mold 120, and the pallet 130 are anodes. In the present embodiment, the bias power application unit 70 applies a bias voltage to the object to be processed 10 through the lower masking member 22. For example, the bias power applying unit 70 can apply a voltage of −3000 V to the power introducing unit 71. In the present embodiment, the film forming container 100 and the pallet 130 are connected to the ground (0 V).

  The high frequency power application unit 70r is a device for generating plasma. The high frequency power application unit 70r applies high frequency power to the first electrode 75 via the power introduction unit 71r. In the present embodiment, the high frequency power application unit 70r applies high frequency power to the second electrode 76 via the power introduction unit 72r.

  The self-bias voltage cut circuit 41 is connected to the high-frequency power application unit 70r and the first electrode 75, and can cut the self-bias voltage (negative DC component) applied to the first electrode 75 from the high-frequency power application unit 70r. It is a simple circuit. In other words, the self-bias voltage cut circuit 41 generates a self-bias voltage at the first electrode 75 when high-frequency power is applied to the first electrode 75 from the high-frequency power application unit 70r under the control of the control unit 95. And a circuit capable of switching between the generation of a self-bias voltage at the first electrode 75. In the present embodiment, the self-bias voltage cut circuit 41 includes a filter f and a switch SW. In the present embodiment, the filter f includes an inductor fL and a capacitor fC. As shown in FIG. 3, the filter f has one end connected to the high frequency power application unit 70r and the other end connected to the switch SW. In the present embodiment, the switch SW included in the self-bias voltage cut circuit 41 is connected to the ground under the control of the control unit 95, so that the DC component (of the high-frequency component and the DC component applied to the first electrode 75) The self-bias voltage) is cut. Further, since the switch SW included in the self-bias voltage cut circuit 41 is not connected to the ground under the control of the control unit 95, the high frequency component and the direct current component are applied to the first electrode 75, and the self-bias is applied to the first electrode 75. A voltage is applied. The self-bias voltage cut circuit 42 is connected to the high-frequency power application unit 70r and the second electrode 76, and can cut the self-bias voltage (negative DC component) applied from the high-frequency power application unit 70r to the second electrode 76. It is a simple circuit. Since the self-bias voltage cut circuit 42 has the same configuration as the self-bias voltage cut circuit 41, the illustration is omitted.

The gas supply device 80 supplies a carrier gas, a source gas, and an etching gas into the film forming container 100 via the supply port 81. In the present embodiment, the gas supply device 80 supplies, for example, nitrogen (N ₂ ) gas or argon (Ar) gas as a carrier gas, and supplies, for example, pyridine (C ₅ H ₅ N) gas as a source gas. Further, the gas supply device 80 supplies, for example, argon gas as an etching gas. The gas supply device 80 is connected to a tank that stores different types of gas. The gas supply device 80 can switch the type of gas supplied to the supply port 81 by operating a switching valve provided between each tank and the supply port 81. In addition, the gas supply device 80 is configured so that the pressure in the film formation container 100 is returned to a pressure at which the opening / closing device 50 can open the film formation container 100 after the film formation by the film formation apparatus 200. For example, nitrogen gas is supplied into 100.

  The exhaust device 90 exhausts the film formation container 100 through the exhaust port 91. The exhaust device 90 is configured by, for example, a rotary pump, a diffusion pump, a turbo molecular pump, or the like.

  The control unit 95 controls the overall operation of the film forming apparatus 200. The control unit 95 includes a CPU and a memory. The CPU controls the film forming apparatus 200 by executing a program stored in the memory. This program may be recorded on various recording media. For example, the control unit 95 controls the opening / closing device 50 to open / close the film forming container 100 and controls the transport device 55 to transport the pallet 130. In addition, the control unit 95 controls the exhaust device 90 to exhaust the inside of the film forming container 100. Further, when the control unit 95 controls the gas supply device 80 to supply the etching gas into the film forming container 100, the control unit 95 controls the bias power application unit 70 to apply the bias power to the workpiece W and apply the high frequency power. The high frequency power is applied to the first electrode 75 and the second electrode 76 by controlling the part 70r. At this time, the control unit 95 controls the self-bias voltage cut circuits 41 and 42 to generate the self-bias voltage at the first electrode 75 and the second electrode 76 without connecting the switch SW to the ground. In addition, the control unit 95 controls the bias power application unit 70 when the source gas for film formation is supplied to at least a part of the workpiece W in the film formation container 100 by controlling the gas supply device 80. The bias power is applied to the workpiece W, the high frequency power application unit 70r is controlled to apply the high frequency power to the first electrode 75 and the second electrode 76, and the self bias voltage cut circuits 41 and 42 are controlled to switch. SW is connected to the ground so that the self-bias voltage is not generated in the first electrode 75 and the second electrode 76.

  FIG. 4 is a partially enlarged view of the film forming apparatus 200. FIG. 4 shows an X portion indicated by a broken line in FIG. 4 and the subsequent drawings, the opening / closing device 50, the transfer device 55, the bias power application unit 70, the high frequency power application unit 70r, the gas supply device 80, the exhaust device 90, and the control unit 95 are illustrated. Is omitted. FIG. 4 shows a contact point (contact point) P1 between the workpiece W and the insulating member 30 and a contact point (contact point) P2 between the workpiece W and the insulating member 30. The contact point P <b> 1 is a place facing the first flat surface portion 111 among places where the workpiece W and the insulating member 30 are in contact. The contact point P <b> 1 is a contact location closest to the first flat surface portion 111 among locations where the workpiece W and the insulating member 30 are in contact with each other in the cross section of the film forming apparatus 200 (FIG. 4). The contact point P <b> 2 is a location facing the second flat surface portion 121 among locations where the workpiece W and the insulating member 30 are in contact. The contact point P <b> 2 is a contact point closest to the second planar portion 121 among the points where the workpiece W and the insulating member 30 are in contact with each other in the cross section of the film forming apparatus 200 (FIG. 4). FIG. 4 further shows a distance A1 between the contact point P1 and the first flat surface portion 111 and a distance B1 between the workpiece W and the bottom portion 113 of the first hollow portion 114. The distance A <b> 1 is the shortest distance between the contact portion between the workpiece W and the insulating member 30 and the first flat portion 111. The distance B1 is the distance between the workpiece W facing the first depression 114 and the bottom 113 of the first depression 114, and is the shortest distance between the bottom 113 of the first depression 114 and the workpiece W. 4 shows a distance A2 between the contact point P2 and the second flat surface portion 121 and a distance B2 between the workpiece W and the bottom portion 123 of the second hollow portion 124. The distance A <b> 2 is the shortest distance between the contact portion between the workpiece W and the insulating member 30 and the second plane portion 121. The distance B2 is the distance between the workpiece W facing the second depression 124 and the bottom 123 of the second depression 124, and is the shortest distance between the bottom 123 of the second depression 124 and the workpiece W. In the film forming apparatus 200, the distance A1 is smaller than the distance B1. In other words, the space formed by the workpiece W and the first flat portion 111 is smaller than the space formed by the workpiece W and the first recess 114. In the present embodiment, the distance A2 is smaller than the distance B2. In other words, the space formed by the workpiece W and the second flat surface portion 121 is smaller than the space formed by the workpiece W and the second hollow portion 124.

  In the present embodiment, the distance A1 and the distance A2 are determined when the bias power application unit 70 applies power between the workpiece W and the film formation container 100, and the workpiece W and the film formation container 100 (first flat surface portion 111, It is shorter than the distance of the sheath formed between the second flat portion 121). In the present embodiment, the distance A1 and the distance A2 are 2.0 mm or less. From the viewpoint of sufficiently maintaining the insulation between the film forming container 100 and the workpiece W, the distance A1 and the distance A2 are preferably 0.5 mm or more.

  4 further illustrates the X-axis from the connection point Q1 between the first depression 114 and the first plane part 111 and the connection point Q2 between the second depression 124 and the second plane part 121 to the contact points P1 and P2. The shortest distance C along is shown. The distance C is also the shortest distance along the X-axis from the side part 112 of the first dent part 114 and the side part 122 of the second dent part 124 to the contact points P1 and P2. In the present embodiment, the distance C is greater than 0 (zero). In this embodiment, the distance C is 10 mm or more.

A2. Film forming method:
FIG. 5 is a process diagram showing the film forming process performed by the film forming apparatus 200. In the film forming process, first, the control unit 95 controls the transfer device 55 to transfer the workpiece W into the film forming container 100 (step S10). In the present embodiment, the insulating member 30, the lower masking member 22, and the target object 10 are stacked on the pallet 130, and the upper masking member 21 is further stacked on the target object 10. By doing so, the non-processing target portion 10 </ b> B of the processing target object 10 is covered with the masking member 20. Thereafter, the control unit 95 controls the opening / closing device 50 to move the first mold 110 of the film forming container 100 in the + Y-axis direction, and controls the transfer device 55 to control the insulating member 30, the masking member 20, and the object to be processed. The pallet 130 on which the object 10 is loaded is conveyed into the film forming container 100. The conveyed pallet 130 is disposed on the second mold 120 via the seal member 62. Before the workpiece W is transported into the film forming container 100, the control unit 95 controls the transport device 55 to install the pallet 130 in a temperature rising device such as a heater, for example, 200 ° C. in a nitrogen atmosphere. The temperature of the workpiece W may be raised by raising the temperature to the minimum. In this way, oxides and hydroxides attached to the workpiece W can be removed.

  Next, the controller 95 controls the opening / closing device 50 to close the film forming container 100 (step S20). In the present embodiment, the control unit 95 causes the transport device 55 to transport the pallet 130 into the film forming container 100 and then controls the opening / closing device 50 to move the first mold 110 in the −Y-axis direction. When the film formation container 100 is closed, the processing target portion 10 </ b> A is in a state facing the space in the first dent part 114 and the second dent part 124 of the film formation container 100. The workpiece W is in a state of being separated from the first plane part 111 and the second plane part 121. Further, the distance A1 between the contact point P1 and the first flat surface portion 111 is smaller than the distance B1 between the workpiece W and the first hollow portion 114. A distance A2 between the contact point P2 and the second flat surface portion 121 is smaller than a distance B2 between the workpiece W and the second hollow portion 124.

  Next, the control unit 95 controls the gas supply device 80 to supply the etching gas into the film forming container 100 (step S30). In the present embodiment, step S30 includes a step of raising the temperature of the workpiece W (step S32) and a step of etching the inside of the film formation container 100 including the first electrode 75 and the second electrode 76 (step S34). Including. In step S <b> 30, the control unit 95 controls the exhaust device 90 to exhaust the gas (for example, nitrogen gas) in the film formation container 100 through the exhaust port 91, and causes the gas supply device 80 to pass through the supply port 81. An etching gas is supplied. In step S30, the control unit 95 controls the bias power application unit 70 to apply bias power to the work W, and controls the high frequency power application unit 70r to apply high frequency power to the first electrode 75 and the second electrode 76. Is applied. In step S <b> 30, the control unit 95 controls the self-bias voltage cut circuits 41 and 42 to generate self-bias voltages on the first electrode 75 and the second electrode 76.

  In the temperature raising process (step S32), the control unit 95 causes the gas supply device 80 to supply an etching gas (for example, argon gas) used in a subsequent process (step S34, etching process). In step S32, the control unit 95 controls the bias power application unit 70 to apply bias power to the work W, and controls the high frequency power application unit 70r to apply the first electrode 75 and the second electrode 76 to each other. By applying the high frequency power, the workpiece W is heated to, for example, 300 ° C. or higher. In step S32, the control unit 95 sets the gas supply device 80, the bias power application unit 70, and the high-frequency power application unit 70r so that the gas flow rate and power amount reach the flow rate and power amount used in the subsequent etching process. Control the gas supply and power application. Therefore, in step S32, the gas flow rate, the amount of power applied to the workpiece W, and the amount of power applied to the first electrode 75 and the second electrode 76 are the same as those used in step S34 (etching step). Less than the amount.

  In the etching process (step S34), the control unit 95 causes the gas supply device 80 to supply the etching gas via the supply port 81. The etching gas is, for example, argon gas, and the pressure value in the film forming container 100 is, for example, 11 Pa. In step S34, the control unit 95 causes the bias power applying unit 70 to apply a bias power of −3000 V to the work W, and the high frequency power applying unit 70r to the first electrode 75 and the second electrode 76 at 13.56 MHz − A high frequency power of 500 W is applied. By doing so, the foreign matters attached to the film formation container 100, the first electrode 75, and the second electrode 76 in the previous film formation process are removed.

  Next, the control unit 95 controls the gas supply device 80 to supply the source gas into the film forming container 100 (step S50). In step S50, the control unit 95 causes the gas supply device 80 to supply the carrier gas and the source gas via the supply port 81. The carrier gas is, for example, hydrogen gas and argon gas, and the source gas is, for example, nitrogen gas and pyridine gas. In step S50, the pressure value in the film formation container 100 is, for example, 11 Pa. In step S50, the control unit 95 causes the bias power applying unit 70 to apply a bias power of −3000 V to the work W, and the high frequency power applying unit 70r to the first electrode 75 and the second electrode 76 at 13.56 MHz − A high frequency power of 500 W is applied, and the self bias voltage cut circuits 41 and 42 are controlled so that the self bias voltage is not generated in the first electrode 75 and the second electrode 76. When step S50 ends, the control unit 95 controls the gas supply device 80, the bias power application unit 70, and the high frequency power application unit 70r to stop the supply of the source gas and the application of power.

  Next, the control part 95 controls the gas supply apparatus 80, and adjusts the pressure in the film-forming container 100 (step S60). In the present embodiment, in order to return the pressure in the film formation container 100 to a pressure at which the film formation container 100 can be opened by the opening / closing device 50, the control unit 95 supplies the film supply container 100 to the gas supply device 80. Nitrogen gas is supplied inside. When the control unit 95 causes the gas supply device 80 to adjust the pressure in the film formation container 100, the control unit 95 causes the opening / closing device 50 to move the first mold 110 in the + Y-axis direction and causes the transfer device 55 to move to the insulating member 30 and the masking member 20. Then, the pallet 130 on which the object to be processed 10 is loaded is unloaded from the film forming container 100. As described above, a series of film forming processes by the film forming apparatus 200 is completed.

A3. effect:
A3-1. Effect 1:
According to the film forming apparatus 200 of the first embodiment, when the control unit 95 controls the gas supply device 80 to supply the etching gas into the film forming container 100, the bias power application unit 70 is controlled to control the work W. The bias power is applied to the first electrode 75, and the high frequency power application unit 70r is controlled to apply the high frequency power to the first electrode 75, and the self bias voltage cut circuit 41 is controlled to generate the self bias voltage to the first electrode 75. Therefore, it is possible to effectively remove foreign matters attached to the first electrode 75. When the control unit 95 controls the gas supply device 80 to supply the source gas into the film forming container 100, the control unit 95 controls the bias power application unit 70 to apply the bias power to the work W, and the high frequency power application unit. Since the high frequency power is applied to the first electrode 75 by controlling 70r and the self-bias voltage cut circuit 41 is not controlled to generate the self-bias voltage in the first electrode 75, it is applied to the workpiece W during film formation. It is possible to suppress a decrease in power due to the self-bias voltage generated at the first electrode 75. Therefore, film formation can be performed effectively. In addition, since no self-bias voltage is generated in the first electrode 75, it is possible to prevent foreign matter from adhering to the first electrode 75 during film formation. Therefore, it is possible to prevent the foreign matter attached to the first electrode 75 from being peeled off and attached to the work W, or from being attached to the seal member 60 and reducing the airtightness of the film formation container 100.

  Similarly, when the control unit 95 controls the gas supply device 80 to supply the etching gas into the film forming container 100, the bias power application unit 70 is controlled to apply bias power to the workpiece W and to apply high frequency power. Since the high-frequency power is applied to the second electrode 76 by controlling the portion 70r and the self-bias voltage cut circuit 42 is controlled to generate a self-bias voltage at the second electrode 76, the second electrode 76 is attached to the second electrode 76. Foreign matter can be effectively removed. When the control unit 95 controls the gas supply device 80 to supply the source gas into the film forming container 100, the control unit 95 controls the bias power application unit 70 to apply the bias power to the work W, and the high frequency power application unit. Since the high frequency power is applied to the second electrode 76 by controlling 70r and the self bias voltage is not generated in the second electrode 76 by controlling the self bias voltage cut circuit 42, it is applied to the workpiece W during film formation. Since power is suppressed from being reduced by the self-bias voltage generated in the second electrode 76, film formation can be performed effectively. In addition, since no self-bias voltage is generated in the second electrode 76, it is possible to prevent foreign matter from adhering to the second electrode 76 during film formation. Therefore, it is possible to prevent the foreign matter attached to the second electrode 76 from being peeled off and attached to the work W, or the airtightness of the film forming container 100 from being lowered.

A3-2. Effect 2:
According to the film forming apparatus 200 of the first embodiment, when the film forming container 100 is closed, the insulating member 30 in contact with the workpiece W is the first flat portion 111 and the second mold 120 of the first mold 110. The distance A1 between the contact point P1 between the workpiece W and the insulating member 30 and the first flat portion 111 is smaller than the distance B1 between the workpiece W and the bottom 113 of the first recess 114. Intrusion of plasma from the first dent 114 or the second dent 124 into the space formed by the workpiece W and the first flat surface 111 is suppressed. Therefore, since the amount of plasma at the contact point P1 is reduced, the occurrence of abnormal discharge can be suppressed.

  Similarly, since the distance A2 between the contact point P2 between the workpiece W and the insulating member 30 and the second flat surface portion 121 is smaller than the distance B2 between the workpiece W and the bottom 123 of the second hollow portion 124, the workpiece W Intrusion of plasma from the second depression 124 or the first depression 114 into the space formed by the second flat portion 121 is suppressed. Therefore, since the amount of plasma at the contact point P2 is reduced, the occurrence of abnormal discharge can be suppressed.

  Further, the distance C along the X-axis from the connection point Q1 between the first recess 114 and the first flat part 111 and the connection point Q2 between the second recess 124 and the second flat part 121 to the insulating member 30 is Since it is larger than 0 (zero), the space where the plasma generated by the first dent part 114 and the second dent part 124 is generated is separated from the contact points P1 and P2 between the workpiece W and the insulating member 30. Therefore, the amount of plasma at the contact points P1 and P2 is further reduced, so that the occurrence of abnormal discharge can be further suppressed.

  Further, since the distance A1 between the contact point P1 between the workpiece W and the insulating member 30 and the first plane portion 111 is shorter than the distance of the sheath formed between the workpiece W and the first plane portion 111, Plasma can be prevented from being generated between the workpiece W and the first plane portion 111. In addition, since the distance A2 between the contact point P2 between the workpiece W and the insulating member 30 and the second planar portion 121 is shorter than the distance of the sheath formed between the workpiece W and the second planar portion 121, Plasma can be prevented from being generated between the workpiece W and the second plane portion 121. Therefore, since the amount of plasma at the contact points P1 and P2 is effectively reduced, the occurrence of abnormal discharge can be effectively suppressed.

  Further, since the distance A1 and the distance A2 are 2.0 mm or less, the first depression is formed in the space formed by the workpiece W and the first plane portion 111 and the space formed by the workpiece W and the second plane portion 121. Intrusion of plasma from the portion 114 and the second depression 124 is further suppressed. Further, plasma can be prevented from being generated between the workpiece W and the first flat surface portion 111. Further, it is possible to prevent plasma from being generated between the workpiece W and the second flat surface portion 121. Therefore, the amount of plasma at the contact points P1 and P2 is further reduced, so that the occurrence of abnormal discharge can be further suppressed.

  Further, in the film forming apparatus 200, the processing target portion 10A of the workpiece W is directed to the space in the first recess 114 and the space in the second recess 124, and the insulating member 30 and the end of the workpiece W Is located between the first plane part 111 and the second plane part 121. Therefore, the film forming apparatus 200 can be downsized as compared with the case where the entire workpiece W is accommodated in a space where plasma is generated. Further, in the film forming apparatus 200, since the space for exhausting for film formation is small, the time required for exhaust can be shortened, and the time required for forming the film on the work W can be shortened. .

  Hereinafter, the film forming apparatus 200 includes self-bias voltage cut circuits 41 and 42, and whether or not the self-bias voltage is generated in the first electrode 75 and the second electrode 76 is different between the etching process and the film forming process. The effect of this will be described based on experimental results.

A4. Experiment and results:
FIG. 6 shows the results of the experiment. Using the film forming apparatus 200 in the above-described embodiment, a step of supplying an etching gas (temperature raising step (FIG. 5, step S32), an etching step (FIG. 5, step S34)) and a step of supplying a source gas (composition) In each process of the film process (FIG. 5, step S50)), the self-bias voltage cut circuits 41 and 42 are controlled to change the connection state of the switch SW to the ground, whereby the first electrode 75 and the second electrode Five experiments were performed in which the presence or absence of application of the self-bias voltage to the electrode 76 was varied. The gas flow rate, the amount of bias power, and the amount of high-frequency power are the same as in the above-described embodiment. No. shown in FIG. In the experiments 1 to 5, “apply” means that the switch SW of the self-bias voltage cut circuits 41 and 42 is not connected to the ground in the process, and the first electrode 75 and the second electrode 76 are self-biased. A voltage is generated (a self-bias voltage is applied). In “cut”, the switches SW of the self-bias voltage cut circuits 41 and 42 are connected to the ground, and no self-bias voltage is generated in the first electrode 75 and the second electrode 76 (the self-bias voltage is It has been cut).

  The evaluation was performed by observing the surface states of the first electrode 75 and the second electrode 76 after the film formation step. It shows that the surface state of the 1st electrode 75 and the 2nd electrode 76 is so favorable that the numerical value (1-5) of evaluation is large. A good surface state indicates that the thickness of the foreign matter attached to the surfaces of the first electrode 75 and the second electrode 76 is small. In the case where the thickness of the foreign matter adhering to the surface does not affect the next film formation, the numerical value of the evaluation was set to “3” or more. That is, if the numerical value of the evaluation is “3” or more, the foreign matter attached to the first electrode 75 and the second electrode 76 is peeled off and attached to the work W, or attached to the seal member 60 to form the film formation container. It is suppressed that airtightness of 100 falls.

  As a result of the experiment, a self-bias voltage was applied in one of the temperature raising and etching steps, and the self-bias voltage was cut in the film-forming step. In the experiments 1 to 3, the evaluation was “3” or more. No. In the experiments of 1 to 3, it is considered that the foreign matter of the first electrode 75 and the second electrode 76 was effectively removed because the self-bias voltage was applied in either the temperature rise or the etching process. When a self-bias voltage is applied in the film formation process, the film formation container 100 serves as an anode, and the first electrode 75 and the second electrode 76 serve as a cathode, and the film formation container 100 and the first electrode 75 are used. In addition, plasma is generated between the film formation container 100 and the second electrode 76, and foreign matter (reaction by-product, film) may adhere to the first electrode 75 and the second electrode 76. However, no. In the experiments of 1 to 3, since the self-bias voltage generated in the first electrode 75 and the second electrode 76 is cut in the film forming process, foreign matter adheres to the first electrode 75 and the second electrode 76. Is considered to be suppressed. No. From the experimental results of 1, when the self-bias voltage is applied in the temperature rising and etching process and the self-bias voltage is cut in the film forming process, the surface states of the first electrode 75 and the second electrode 76 are the best. (Evaluation 5) No. 2 and No. From the experimental results of 3, it can be seen that when the self-bias voltage is applied in the temperature raising process or the etching process, the surface condition of the electrode is better when the self-bias voltage is applied in the etching process. This is because the electric power applied to the workpiece W and the electric power applied to the first electrode 75 and the second electrode 76 are larger in the etching process than in the temperature raising process, so that it adheres to the electrode surface in the etching process. This is probably because foreign matters are easily removed.

A5. Modification of the first embodiment:
A5-1. Modification 1 of the first embodiment 1:
In the first embodiment described above, the control unit 95 performs a self-bias voltage cut circuit in the temperature raising step (FIG. 5, step S32) and the etching step (FIG. 5, step S34), which are steps in which an etching gas is supplied. 41 is controlled so that the switch SW is not connected to the ground, and a self-bias voltage is generated in the first electrode 75. On the other hand, the control unit 95 controls the self-bias voltage cut circuit 41 and does not connect the switch SW to the ground in at least one of the temperature raising process and the etching process, and the self-bias voltage is applied to the first electrode 75. May be generated. Even in this case, the self-bias voltage can be generated in the first electrode 75 in any process in which the etching gas is supplied, so that the foreign matter attached to the first electrode 75 can be removed. Note that in the case where a self-bias voltage is generated in the first electrode 75 in one of the above steps, the etching step (FIG. 5, step S34) is performed from the viewpoint of further removing foreign matters attached to the first electrode 75. ), The self-bias voltage cut circuit 41 is preferably controlled to generate a self-bias voltage at the first electrode 75. Similarly, the controller 95 does not connect the switch SW to the ground by controlling the self-bias voltage cut circuit 42 in the temperature raising process (FIG. 5, step S32) and the etching process (FIG. 5, step S34). A self-bias voltage is generated in the second electrode 76. On the other hand, the control unit 95 controls the self-bias voltage cut circuit 42 and does not connect the switch SW to the ground in at least one of the temperature raising process and the etching process, and the self-bias voltage is applied to the second electrode 76. May be generated. Even in this case, the self-bias voltage can be generated in the second electrode 76 in any process in which the etching gas is supplied, so that the foreign matter attached to the second electrode 76 can be removed. In the case where a self-bias voltage is generated in the second electrode 76 in one of the above steps, the etching step (FIG. 5, step S34) is performed from the viewpoint of further removing foreign matters attached to the second electrode 76. ), The self-bias voltage cut circuit 42 is preferably controlled to generate a self-bias voltage at the second electrode 76.

A5-2. Modification 2 of the first embodiment:
In the first embodiment, the film forming apparatus 200 includes the first electrode 75, the self-bias voltage cut circuit 41, the second electrode 76, and the self-bias voltage cut circuit 42. May include only one of the first electrode 75 and the self-bias voltage cut circuit 41 or the second electrode 76 and the self-bias voltage cut circuit 42. The film forming apparatus 200 may include the first electrode 75 and the second electrode 76, and at least one of the first electrode 75 and the second electrode 76 may include a self-bias voltage cut circuit. Good. The self-bias voltage cut circuits 41 and 42 are circuits that can cut the self-bias voltage generated when high-frequency power is applied to the first electrode 75 and the second electrode 76, that is, the first electrode 75, Any circuit can be used as long as it can switch whether or not the self-bias voltage is generated in the second electrode 76 by the control of the control unit 95, and the configuration of the circuit described in the above embodiment may be changed as appropriate.

A5-3. Modification 3 of the first embodiment:
FIG. 7 is a diagram illustrating a film forming apparatus 200m according to Modification 3 of the first embodiment. In the film forming apparatus 200m of the present modification, the workpiece W and the insulating member are connected from the connection location Q1 between the first depression 114m and the first plane portion 111m and the connection location Q2 between the second depression 124m and the second plane portion 121m. The shortest distance along the first plane part 111m to the contact points P1, P2 with 30 is 0 (zero). In this modification, the connection location Q2 and the contact point P2 are located on the same YZ plane. Therefore, as shown in FIG. 7, in the film forming container 100m, the upper masking member 21 is exposed in the first depression 114m of the first mold 110m, and a part of the lower masking member 22 is The second mold 120m is exposed in the second depression 124m. Also in the present modification, as in the first embodiment described above, the distance between the contact point P1 and the first flat surface portion 111m is smaller than the distance between the workpiece W and the bottom portion 113m of the first recess 114m. Further, the distance between the contact point P2 and the second flat surface portion 121m is smaller than the distance between the workpiece W and the bottom portion 123m of the second hollow portion 124m. Even with such a film forming apparatus 200m, it is possible to effectively remove foreign substances adhering to the first electrode 75 and the second electrode 76 and to form the work W in the same manner as in the first embodiment. . Moreover, generation | occurrence | production of abnormal discharge can be suppressed similarly to the above-mentioned 1st Embodiment.

A5-4. Modification 4 of the first embodiment:
FIG. 8 is a diagram illustrating a film forming apparatus 200a according to Modification 4 of the first embodiment. The film forming apparatus 200a in the present modification has a configuration in which the film forming apparatus 200 of the first embodiment is rotated by 90 ° in the X-axis direction. In this modification, the film forming container 100 is opened and closed in the X-axis direction. In this modification, it is preferable that the insulating member 30, the masking member 20, and the pallet 130 are fitted together with a coupling force that does not drop off. Or it is preferable that the insulation member 30, the masking member 20, and the pallet 130 are each fastened, for example with the volt | bolt etc. Also with such a film forming apparatus 200a, it is possible to effectively remove foreign substances adhering to the first electrode 75 and the second electrode 76 and to form the work W in the same manner as in the first embodiment. . Moreover, generation | occurrence | production of abnormal discharge can be suppressed similarly to the above-mentioned 1st Embodiment.

A5-5. Modification 5 of the first embodiment:
FIG. 9 is a diagram illustrating a film forming apparatus 200b according to Modification 5 of the first embodiment. Unlike the film forming apparatus 200 of the first embodiment, the film forming apparatus 200b forms a film only on the first recess 114 side of the object 10 to be processed. Therefore, in this modification, there is no space between the second mold 120b of the film formation container 100b and the object to be processed 10, and the insulating member 30b is in contact with the second mold 120b, and the insulating member 30b is on the insulating member 30b. The lower masking member 22b contacts, and the entire lower surface of the object to be processed 10 contacts the lower masking member 22b. Further, the film forming apparatus 200b does not include the second electrode 76 and the self-bias voltage cut circuit 42. In the present modification, the film forming apparatus 200 b does not include the pallet 130. Moreover, in this modification, the electric power introduction part 71 is provided in the 1st type | mold 110b side. As in the first embodiment described above, the distance between the contact point P1b between the workpiece W and the insulating member 30b and the first flat surface portion 111 is the distance between the workpiece W and the bottom 113 of the first recess 114. Smaller than. Also with such a film forming apparatus 200b, it is possible to effectively remove foreign matter adhering to the first electrode 75 and form the workpiece W in the same manner as in the first embodiment. Moreover, generation | occurrence | production of abnormal discharge can be suppressed similarly to the above-mentioned 1st Embodiment.

A5-6. Modification 6 of the first embodiment:
FIG. 10 is a diagram illustrating a film forming apparatus 200c according to Modification 6 of the first embodiment. The main difference between the film forming apparatus 200c in the present modification and the film forming apparatus 200 in the first embodiment described above is that the workpiece W is arranged without using the pallet 130. Therefore, in the present modification, in the film forming container 100c, the work W and the second mold 120c are separated from each other while the second flat portion 121c of the second mold 120c is in contact with the insulating member 30c. As in the first embodiment described above, also in this modification, the distance between the contact point P1c between the workpiece W and the insulating member 30c and the first flat surface portion 111 is the same as the distance between the workpiece W and the first recess 114. Smaller than the distance to the bottom 113. Further, the distance between the contact point P2c between the workpiece W and the insulating member 30c and the second flat surface portion 121c is smaller than the distance between the workpiece W and the bottom portion 123 of the second hollow portion 124. Other configurations of the present modification are the same as those of the first embodiment described above. Also with such a film forming apparatus 200c, it is possible to effectively remove foreign matters attached to the first electrode 75 and the second electrode 76 and to form the work W in the same manner as in the first embodiment. . Moreover, generation | occurrence | production of abnormal discharge can be suppressed similarly to the above-mentioned 1st Embodiment.

A5-7. Modification 7 of the first embodiment:
FIG. 11 is a diagram illustrating a film forming apparatus 200n according to Modification 7 of the first embodiment. In the film forming apparatus 200n, the pallet 130 and the insulating member 30 are not used, and the workpiece W (target object 10n) is transferred into the film forming container 100 by the transfer device 55. In the film forming apparatus 200n, instead of the insulating member 30 of the above-described embodiment, the insulating seal member 60n directs the processing target portion 10nA on the upper surface side of the workpiece W to the space in the first recess 114, and the workpiece In a state where W is separated from the first flat surface portion 111, the workpiece W is contacted. The sealing member 61n is in contact with the first flat portion 111 of the first mold 110 and the non-processing target portion 10nB of the processing target object 10n. The seal member 62n is in contact with the second flat surface portion 121 and the non-processing target portion 10nB of the second mold 120. FIG. 11 shows a contact point P1n between the workpiece W and the seal member 60n and a contact point P2n between the workpiece W and the seal member 60n. Similar to the first embodiment described above, the distance between the contact point P1n and the first flat surface portion 111 is smaller than the distance between the workpiece W and the bottom portion 113 of the first recess 114. Further, the distance between the contact point P <b> 2 n and the second flat surface part 121 is smaller than the distance between the workpiece W and the bottom part 123 of the second hollow part 124. Other configurations of the present modification are the same as those of the first embodiment described above. Even with such a film forming apparatus 200n, it is possible to effectively remove foreign substances adhering to the first electrode 75 and the second electrode 76 and to form the work W in the same manner as in the first embodiment. . Moreover, generation | occurrence | production of abnormal discharge can be suppressed similarly to the above-mentioned 1st Embodiment. In this modification, the workpiece W may be configured by the object to be processed 10n and the masking member 20.

A5-8. Modification 8 of the first embodiment:
In the first embodiment described above, the distance A1 between the contact point P1 and the first plane part 111 is shorter than the distance of the sheath formed between the workpiece W and the first plane part 111, and the contact point P2 and the first plane part 111 are the same. The distance A <b> 2 with the two plane portions 121 is shorter than the distance of the sheath formed between the workpiece W and the second plane portion 121. On the other hand, either one of the distance A1 and the distance A2 may be larger than the distance of the sheath, or both may be larger than the distance of the sheath. In the first embodiment described above, the distance A1 and the distance A2 are 2.0 mm or less. On the other hand, either one of distance A1 and distance A2 may be larger than 2.0 mm, and both may be larger than 2.0 mm.

A5-9. Modification 9 of the first embodiment:
In the first embodiment described above, the workpiece W includes the workpiece 10 and the masking member 20, but the workpiece W may not include the masking member 20.

A5-10. Modification 10 of the first embodiment:
In the first embodiment described above, the first recess 114 includes the side portion 112 and the bottom 113, but the first recess 114 is in a direction away from the object to be processed 10 from the first plane portion 111. What is necessary is just to be depressed, for example, a hemisphere may be sufficient. In this case, the bottom 113 of the first dent 114 may be the farthest part from the work W of the first dent 114.

A5-11. Modification 11 of the first embodiment:
In the first embodiment described above, the film forming container 100 and the pallet 130 are at the ground potential, but the film forming container 100 and the pallet 130 may not be at the ground potential. The bias power application unit 70 only needs to be able to apply power for forming the object to be processed 10 between the film forming container 100 and the object to be processed 10.

B. Second embodiment:
B1. Configuration of film deposition system:
FIG. 12 is a partial schematic cross-sectional view partially showing a configuration of a film forming apparatus 200d in the second embodiment. FIG. 12 shows a portion X1 corresponding to the X portion of FIG. In the film forming apparatus 200d according to the present embodiment, the connecting portion Q1 between the first recess 114d (side portion 112d) of the first mold 110d and the first flat portion 111d is an insulating member from the end of the processing target portion 10A. It is located away from the 30th side. In addition, the connection portion Q2 between the second recess portion 124d (side portion 122d) of the second mold 120d and the second flat surface portion 121d is located away from the end of the processing target portion 10A toward the insulating member 30 side. Yes.

  FIG. 12 shows a distance L1 along the X-axis between the connection portion Q1 between the first depression 114d and the first flat surface portion 111d and the end of the processing target portion 10A. In addition, a distance L2 along the X axis between the connection portion Q2 between the second depression 124d and the second flat surface portion 121d and the end of the processing target portion 10A is shown. In the present embodiment, the distance L1 and the distance L2 are equal. For example, when the power applied to the workpiece W by the bias power application unit 70 is −1000 V and the pressure in the film forming container 100d is 10 Pa, the distances L1 and L2 are preferably about 3 mm or more. For example, when the power applied to the workpiece W by the bias power application unit 70 is −3000 V and the pressure in the film forming container 100 d is 10 Pa, the distances L1 and L2 may be about 9 mm or more. preferable. As described above, the distances L1 and L2 can be changed according to the power applied by the bias power application unit 70 and the pressure (degree of vacuum) in the film formation container 100d. Other configurations of the film forming apparatus 200d of the present embodiment are the same as those of the film forming apparatus 200 of the first embodiment described above, and thus the description thereof is omitted.

B2. effect:
In order to generate a plasma between the workpiece W to which electric power is applied and the film formation container 100d to form a film on the target object portion 10A, a so-called gap is formed between the target object portion 10A and the film formation container 100d. It is preferable that the distance is longer than the distance of the sheath, and plasma is not generated at a position where the target portion 10A to be processed and the film forming container 100d are close to each other, and a film formation defect occurs at the end of the target portion 10A. There is a case. However, according to the film forming apparatus 200d of the present embodiment, the connection portion Q1 between the first recess 114d and the first flat surface portion 111d of the film forming container 100d is the end of the processing target portion 10A on the upper surface side of the workpiece W. Therefore, the distance between the processing target portion 10A and the film forming container 100d can be ensured. Therefore, it is possible to suppress the occurrence of a film formation defect at the end of the processing target portion 10A on the upper surface side of the workpiece W.

  In addition, the connection portion Q2 between the second recess portion 124d and the second flat surface portion 121d of the film formation container 100d is located away from the end of the processing target portion 10A on the lower surface side of the workpiece W toward the insulating member 30 side. Therefore, the distance between the processing target portion 10A on the lower surface side of the workpiece W and the film forming container 100d can be secured. Therefore, it is possible to suppress the occurrence of a film formation defect at the end of the processing target portion 10A on the lower surface side of the workpiece W.

  Moreover, since the film forming apparatus 200d of the present embodiment has the same configuration as that of the first embodiment described above, it is possible to suppress the occurrence of abnormal discharge as in the first embodiment.

B3. Modification of the second embodiment:
In the second embodiment described above, the distance L1 between the connection portion Q1 between the first depression 114d and the first plane portion 111d and the end of the target portion 10A, the second depression 124d and the second plane. The distance L2 between the connection point Q2 with the part 121d and the end of the processing target portion 10A is equal. On the other hand, the distance L1 and the distance L2 may be different. For example, only the connection portion Q1 between the first depression 114d and the first flat surface portion 111d may be located away from the end of the processing target portion 10A on the upper surface side of the workpiece W toward the insulating member 30. Only the connection portion Q2 between the second recess 124d and the second flat surface portion 121d may be located away from the end of the processing target portion 10A on the lower surface side of the workpiece W toward the insulating member 30 side.

  The film forming apparatus 200d according to the second embodiment described above can be modified in the same manner as the modifications 1 to 8, 10, and 11 according to the first embodiment described above.

C. Other variations:
In the various embodiments described above, the object to be processed 10 is a separator, but the object to be processed 10 may be a member having conductivity. In the above-described embodiment, the film forming apparatuses 200 to 200r form a carbon-based thin film. However, in the case of forming a film, gold (Au), platinum (Pt), tantalum (Ta), A thin film of another conductive element such as silicon (Si) may be formed.

  In the above-described embodiment, the first molds 110, 110c, 110d, and 110m and the second molds 120, 120c, 120d, and 120m may be interchanged.

  The film forming apparatus in the above-described embodiment may be used as a processing apparatus that forms or etches a part of a workpiece by a plasma CVD method.

  The present invention is not limited to the above-described embodiments and modifications, and can be realized with various configurations without departing from the spirit thereof. For example, the technical features in the embodiments and modifications corresponding to the technical features in each embodiment described in the summary section of the invention are intended to solve part or all of the above-described problems, or In order to achieve part or all of the effects, replacement or combination can be appropriately performed. Moreover, elements other than the elements described in the independent claims among the constituent elements in the embodiment and each modification described above are additional elements and can be omitted as appropriate.

DESCRIPTION OF SYMBOLS 10, 10n ... To-be-processed object 10A, 10nA ... To-be-processed target part 10B, 10nB ... Non-to-be-processed target part 20 ... Masking member 21 ... Upper masking member 22, 22b ... Lower masking member 30, 30b, 30c ... Insulating member 35 ... Insulating members 41, 42 ... Self-bias voltage cut circuit 50 ... Opening / closing device 55 ... Conveying device 60, 60n, 61, 61n, 62, 62n ... Seal member 70 ... Bias power application unit 70r ... High frequency power application unit 71, 71r , 72r ... electric power introduction unit 75 ... first electrode 76 ... second electrode 80 ... gas supply device 81 ... supply port 90 ... exhaust device 91 ... exhaust port 95 ... control unit 100, 100b, 100c, 100d, 100m ... Membrane container 110, 110b, 110d, 110m ... 1st type | mold 111, 111d, 111m ... 1st plane part 112, 112d ... side 113, 113m ... bottom 114, 114d, 114m ... first recess 120, 120b, 120c, 120d, 120m ... second mold 121, 121c, 121d, 121m ... second flat part 122, 122d ... side parts 123, 123m ... bottom parts 124, 124d, 124m ... second recess part 130 ... pallet 130t ... end parts 200, 200a, 200b, 200c, 200d, 200n, 200m ... film forming apparatuses P1, P1b, P1c, P1n, P2, P2c, P2n ... contact point Q1, Q2 ... connection location W ... work SW ... switch f ... filter fL ... inductor fC ... capacitor

Claims (1)

A film forming apparatus for forming a film on a part of a workpiece by a plasma CVD method,
A first mold including a first depression and a first flat portion arranged around the first depression, and a second mold arranged to face the first mold. A membrane container;
The first mold part is disposed between the first flat part and the second mold part of the first mold, the part to be processed of the work is directed to the space in the first recess part, and the work is directed to the first flat part. An insulating member that contacts the workpiece in a state of being separated from the workpiece,
A bias power application unit that applies bias power to the workpiece;
A first electrode disposed in the first recess,
A high frequency power application unit for applying high frequency power to the first electrode;
Connected to the high-frequency power application unit and the first electrode, and can cut a self-bias voltage generated in the first electrode when high-frequency power is applied from the high-frequency power application unit to the first electrode. A self-bias voltage cut circuit;
A gas supply device;
A control unit;
With
The distance between the contact point between the workpiece and the insulating member and the first flat portion is smaller than the distance between the workpiece and the bottom of the first recess,
The controller is
When the etching gas is supplied into the film formation container by controlling the gas supply device, the bias power application unit is controlled to apply a bias power to the workpiece, and the high frequency power application unit is controlled to Applying high-frequency power to the first electrode and controlling the self-bias voltage cut circuit to generate a self-bias voltage on the first electrode;
The bias power application unit is controlled to supply the bias power to the work when the gas supply device is controlled to supply the source gas for film formation on at least a part of the work into the film formation container. Applying a high-frequency power to the first electrode by controlling the high-frequency power application unit and controlling the self-bias voltage cut circuit to not generate a self-bias voltage on the first electrode;
Deposition device.

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