JP6621679B2 - Audio signal processing apparatus and method of manufacturing audio signal processing apparatus - Google Patents

Description

  The present invention relates to an audio signal processing device and a method for manufacturing an audio signal processing device.

Conventionally, in an audio signal processing apparatus having a plurality of layers in a substrate, conductive paths 920 and 930 of two layers 92 and 93 are connected via a via 900 provided in an insulating layer 90 as shown in FIG. (For example, refer to Patent Document 1).
Patent Document 1 Japanese Patent Laid-Open No. 6-69355

  However, when the conductive paths 920 and 930 of the two layers 92 and 93 are simply connected by the vertical via 900, as shown in FIG. 8, the local density of the current density is greatly increased in the via 900, resulting in the current density. Unintentional radiation of electromagnetic waves (also referred to as unnecessary radiation) occurs at places where the temperature changes suddenly. Such unnecessary radiation causes malfunction of surrounding circuits, thereby preventing correct sound reproduction and lowering sound quality.

  According to a first aspect of the present invention, there is provided an audio signal processing apparatus, wherein a first conductive path provided in a first layer of a substrate and a second provided in a second layer different from the first layer of the substrate. A conductive path, a connection path connected to the first conductive path in the first connection region, and a connection path connected to the second conductive path in the second connection region, the first conductive path from the first connection region The second conductive path extends in the first direction, and the second conductive path extends from the second connection region in a direction including the second direction opposite to the first direction as a component, and the second connection region is The cross-sectional view of the substrate is arranged so as to be shifted in the second direction with respect to the first connection region, and the connection path is at least one straight path connecting between the first connection region and the second connection region. Is provided, and a method for manufacturing the audio signal processing device is provided.

  The summary of the invention does not enumerate all the features of the present invention. In addition, a sub-combination of these feature groups can also be an invention.

It is a schematic diagram which shows the layer structure of the audio signal processing apparatus which concerns on this embodiment. It is a schematic diagram which shows the modification (1) of the layer structure of the audio signal processing apparatus which concerns on this embodiment. It is a schematic diagram which shows the modification (2) of the layer structure of the audio signal processing apparatus which concerns on this embodiment. It is a schematic diagram which shows the modification (3) of the layer structure of the audio signal processing apparatus which concerns on this embodiment. It is a schematic diagram which shows the positional relationship of via | veer. It is a block diagram which shows the function structure of the audio signal processing apparatus which concerns on this embodiment. It is a schematic diagram which shows the layer structure of the conventional audio signal processing apparatus. It is a figure which shows the lightness and darkness of the current density which arises with the conventional audio signal processing apparatus.

  Hereinafter, the present invention will be described through embodiments of the invention, but the following embodiments do not limit the invention according to the claims. In addition, not all the combinations of features described in the embodiments are essential for the solving means of the invention.

[Layer structure of audio signal processing device]
FIG. 1 is a schematic diagram showing a layer configuration of an audio signal processing apparatus according to the present embodiment. As shown in this figure, the audio signal processing apparatus 100 is electrically connected between the first layer 10 and the second layer 20 and the first layer 10 and the second layer 20 in the substrate 1. And a connection path 31 to be connected. Other layers may be provided above and below the first layer 10 and the second layer. The substrate here is a substrate in a device chip such as a semiconductor, and is formed using a device manufacturing process such as a semiconductor.

  The first layer 10 is provided with a first conductive path 11 extending in the first direction 101 from the first connection region 110 to the connection path 31 to reach the first point 12. The second layer 20, which is different from the first layer 10, is provided with a second conductive path 21 extending from the second connection region 210 to the connection path 31 and reaching the second point 22.

  Here, the extending directions of the first conductive path 11 and the second conductive path 21 are in-plane directions of the substrate 1, that is, directions in a plane perpendicular to the normal line of the substrate 1. In addition, the extending direction of the second conductive path 21 is a direction including at least the second direction 102, which is the direction opposite to the first direction 101, of the in-plane direction of the substrate 1 as a component. This direction may be the same as the second direction 102, or the direction may be different from the second direction 102 in the range of −90 ° to + 90 °. In the former case, the second conductive path 21 extends from the second connection region 210 in the second direction 102. The first layer 10 and the second layer 20 described above may be provided with at least a part of an arbitrary circuit that performs signal processing of an audio signal as a whole of the audio signal processing apparatus 100.

  The connection path 31 is connected to the first conductive path 11 through the first connection region 110, and is connected to the second conductive path 21 through the second connection region 210. For example, the substrate 1 has an insulating layer 30 between the first layer 10 and the second layer 20, and the connection path 31 penetrates the insulating layer 30. As an example, the connection path 31 includes a via 310 that penetrates the insulating layer 30, and one end face (lower end face in the drawing) of the via 310 is connected to the first conductive path 11 in the first connection region. 110, and the other end surface (the upper end surface in the drawing) of the via 310 is connected to the second conductive path 21 through the second connection region 210.

  The first conductive path 11, the connection path 31, and the second conductive path 21 described above form a current path 109 that flows from the first conductive path 11 through the connection path 31 to the second conductive path 21, thereby performing audio signal processing. At least one of the audio signals before and after the process is transmitted. As an example, the first conductive path 11, the connection path 31, and the second conductive path 21 transmit analog / digital audio signals in the audio signal processing apparatus 100.

  Here, in the substrate 1 described above, the second connection region 210 is arranged so as to be shifted in the second direction 102 with respect to the first connection region 110 in the cross-sectional view of the substrate 1, and the connection path 31 is formed. It includes at least one straight path (see the straight line portion of the current path 109 in the figure) connecting between the first connection area 110 and the second connection area 210 inside. For example, the second connection region 210 may overlap the first connection region 110 in the thickness direction of the substrate 1 in a cross-sectional view of the substrate 1. However, when the angle formed by the above-described straight path in the connection path 31 and the normal line of the substrate 1 is larger than the reference angle, the first connection region 110 and the second connection region 210 are not seen in the cross-sectional view of the substrate 1. The substrate 1 may not have an overlap in the thickness direction.

  On the other hand, the vias 310 connected to the first connection region 110 and the second connection region 210 are shifted in the second direction 102 from the first layer 10 side toward the second layer 20 side. Is provided. As long as the second connection region 210 overlaps the first connection region 110 in the thickness direction of the substrate 1 in a cross-sectional view of the substrate 1, the connection path 31 includes the first connection region 110 and the second connection region. It is not necessary to include at least one straight path connecting between the two.

  According to such a configuration, the audio signal is transmitted from the first conductive path 11 to the second conductive path 21 without bending at a steep angle. Therefore, the local density of the current density generated in the transmission path is reduced, so that unnecessary radiation can be prevented. Therefore, it is possible to prevent the sound quality from being deteriorated due to the malfunction of the circuit.

  Further, when the area of the first connection region 110 is S1 and the area of the second connection region 210 is S2, it is preferable that the areas S1 and S2 are substantially equal. For example, the areas S1 and S2 may satisfy 0.8 × S1 <S2 <1.2 × S1. According to such a configuration, the local density of the current density generated in the transmission path of the audio signal is further reduced, and as a result, generation of unnecessary radiation can be prevented more reliably. Therefore, it is possible to reliably prevent a malfunction of the circuit and a decrease in sound quality.

[Method of manufacturing audio signal processing apparatus]
In order to manufacture the audio signal processing apparatus 100 as described above, first, the first conductive path 11 extending in the first direction 101 from the first connection region 110 is formed in the first layer 10 of the substrate 1. For example, the first conductive path 11 is formed in the first layer 10 of the substrate 1 using any semiconductor integrated circuit formation technique. At this time, at least a part of the audio signal processing circuit may be formed in the first layer 10.

  Next, the first conductive path 11 and the first connection region 110 are connected between the formed first layer 10 and the second layer 20 to be formed, and the second layer 20 and the second connection are connected. A connection path 31 connected in the region 210 is formed. Here, the second connection region 210 is arranged so as to be shifted in the second direction 102 with respect to the first connection region 110, and the connection path 31 is between the first connection region 110 and the second connection region 210. And at least one straight line connecting the two.

  In order to form such a connection path 31, for example, a printing method such as an ink jet method is used, and an insulating material is discharged on the first layer 10 to form the insulating layer 30, and a conductive material is discharged. By forming the via 310, the connection path 31 whose position is shifted in the second direction 102 from the first layer 10 side toward the second layer 20 side is embedded in the insulating layer 30.

  Alternatively, a through hole that is not parallel to the normal is formed by a photo via method on the insulating layer 30 formed on the first layer 10 by an arbitrary method, or a through hole that is not parallel to the normal is formed by laser processing. After the insulating thin plate-like member having formed thereon is joined to the first layer 10, the through hole may be filled with a conductive material paste or molten metal. Also in these cases, the connection path 31 whose position is shifted in the second direction 102 from the first layer 10 side toward the second layer 20 side can be embedded in the insulating layer 30. As the conductive material, any material such as copper, aluminum, and solder can be used.

Next, the second layer 20 is connected to the connection path 31 by the second connection region 210, extends from the second connection region 210 in a direction including the second direction 102 as a component, and reaches the second point 22. Two conductive paths 21 are formed. For example, the second conductive path 21 is formed in the second layer 20 while forming the second layer 20 on the insulating layer 30 using any semiconductor integrated circuit formation technique. At this time, at least a part of the audio signal processing circuit may be formed in the second layer 20.
Thereby, the audio signal processing apparatus 100 is manufactured.

[Variation of Layer Configuration of Audio Signal Processing Device (1)]
FIG. 2 is a schematic diagram showing a modification (1) of the layer configuration of the audio signal processing device according to the present embodiment. As shown in this figure, the substrate 4 of the audio signal processing device 400 in this modification includes a connection path 41 instead of the connection path 31.

The connection path 41 has a via 410 that penetrates the insulating layer 30. Unlike the above-described via 310, the via 410 has a tangential slope between the first conductive path 11 and the second conductive path 21 at least in a connection portion between the first conductive path 11 and the second conductive path 21. It is formed to be continuous.
According to the audio signal processing device 400 described above, the audio signal is less likely to be bent at a steep angle at the connection portion between the first conductive path 11 and the second conductive path 21 and the via 410, so that unnecessary radiation is more reliably generated. The deterioration of sound quality can be prevented.

[Variation of Layer Configuration of Audio Signal Processing Device (2)]
FIG. 3 is a schematic diagram showing a modification (2) of the layer configuration of the audio signal processing device according to the present embodiment. As shown in this figure, the substrate 5 of the audio signal processing apparatus 500 in this modification includes a plurality of insulating layers 52, 53, and 54 instead of the insulating layer 30. These insulating layers 52, 53, and 54 are formed in this order between the first layer 10 and the second layer 20.

  The substrate 5 includes a connection path 51 instead of the connection path 31. The connection path 51 includes at least one straight line connecting the first connection region 110 and the second connection region 210 therein. For example, the connection path 51 includes a plurality of vias 520, 530, and 540 that respectively penetrate the plurality of insulating layers 52, 53, and 54. As an example, these vias 520, 530, and 540 may penetrate the insulating layers 52, 53, and 54 in the normal direction (thickness direction).

  The plurality of vias 520, 530, and 540 are sequentially shifted in the second direction 102 from the first layer 10 toward the second layer 20 in the sectional view of the substrate 5, and are adjacent in the sectional view of the substrate 5. The vias 520, 530 and 540 to be overlapped with the substrate 5 in the thickness direction.

  For example, a via (second via) 530 adjacent to the second layer 20 side with respect to the via (520) closest to the first layer 10 (first via) 520 has a second point in the second direction 102 than the via 520. 22, and overlaps with the via 520 in the thickness direction in the cross-sectional view of the substrate 5. Similarly, a via (second via) 540 adjacent to the second layer 20 side with respect to a via (530) that is second closest to the first layer 10 (first via) 530 is closer to the second direction 102 than the via 530 is. It is provided on the second point 22 side and overlaps with the via 530 in the thickness direction in the cross-sectional view of the substrate 5.

  In other words, each of the vias 520 and 530 excluding the via 540 closest to the second layer 20 among the plurality of vias 520, 530 and 540 is more than the vias 530 and 540 adjacent to the second layer 20 side. There may be an overlap in the thickness direction that is provided away from the second point 22 in the two directions 102 and extends in the second direction 102 between the vias 530 and 540.

  As an example, the displacement Δ1 of the vias 520 and 530 in the second direction 102 may be smaller than the length w1 of the via 520 in the second direction 102. Similarly, the positional deviation amount Δ2 of the vias 530 and 540 in the second direction 102 may be smaller than the length w2 of the via 530 in the second direction 102.

  In addition, for example, the vias 520 and 530 excluding the via 540 closest to the second layer 20 among the plurality of vias 520, 530 and 540 are more in the second direction than the vias 530 and 540 adjacent to the second layer 20 side. The vias 530 and 540 in 102 are provided apart from the second point 22 in the first direction 101 by distances (Δ1, Δ2) less than the lengths w2, w3.

  As a result, the connection path 51 having the vias 520, 530, and 540 is provided in a position shifted in the second direction 102 from the first layer 10 side toward the second layer 20 side. .

  Here, in the present modification (2), the substrate from the end surface on the first layer 10 side in the via (first via) 520 to the end surface on the first layer 10 side in the via (second via) 530. The length of 5 in the thickness direction is equal to the thickness d1 of the insulating layer 52. If the amount of positional deviation Δ1 between the vias 520 and 530 in the second direction 102 is small with respect to the thickness d1 of the insulating layer 52, the density of current density tends to occur. In addition, as the distance between the first conductive path 11 and the second conductive path 21 in the second direction 102 increases, a larger number of insulating layers (vias) are required in the connection path 51 and the thickness of the substrate 1 increases. Therefore, the positional deviation amount Δ1 of the vias 520 and 530 is preferably 0.4 times or more, more preferably 0.6 times or more of the thickness d1 of the insulating layer 52 provided with the vias 520, and more preferably Preferably it is 0.8 times or more, and particularly preferably 0.9 times or more.

  Similarly, in this modification (2), the substrate from the end surface on the first layer 10 side in the via (first via) 530 to the end surface on the first layer 10 side in the via (second via) 540 The length of 5 in the thickness direction is equal to the thickness d1 of the insulating layer 53. The positional deviation amount Δ2 of the vias 530 and 540 is preferably 0.4 times or more, more preferably 0.6 times or more of the thickness d2 of the insulating layer 53 provided with the vias 530. Preferably it is 0.8 times or more, and particularly preferably 0.9 times or more.

  On the other hand, when the displacement Δ1 between the vias 520 and 530 in the second direction 102 with respect to the thickness d1 of the insulating layer 52 is large, the junction between the via 520 and the via 530 is narrowed, and a portion with a high current density is present. As a result, the density of current density is generated. In addition, the length of the conductive path in the second direction 102 is increased. Therefore, the positional deviation amount Δ1 of the vias 520 and 530 is preferably 2.0 times or less, more preferably 1.6 times or less, and further preferably 1.3 times or less of the thickness d1 of the insulating layer 52. Especially preferably, it is 1.1 times or less. Similarly, the positional deviation amount Δ2 of the vias 530 and 540 is preferably 2.0 times or less, more preferably 1.6 times or less, and still more preferably 1.3 times the thickness d2 of the insulating layer 53. Or less, particularly preferably 1.1 times or less.

  Also, if the lengths w1, w2, and w3 of the vias 520, 530, and 540 in the second direction 102 are small with respect to the thicknesses d1, d2, and d3 of the insulating layers 52, 53, and 54, the audio signal is via. When passing through 520, 530, 540, it will turn at a steep angle. Therefore, the length w1 of the via 520 in the second direction 102 is preferably not less than the thickness d1 of the insulating layer 52, and the length w2 of the via 530 in the second direction 102 is not less than the thickness d2 of the insulating layer 53. The length w3 of the via 540 in the second direction 102 is preferably equal to or greater than the thickness d3 of the insulating layer 54.

  Here, a method of forming the insulating layer 53 on the insulating layer 52 so that the vias 520 and 530 are displaced from each other will be described. First, an etch stop layer is formed in a region where the via 530 is formed in the upper surface of the insulating layer 52 over a part of the upper surface of the via 520 and a part of the insulating region in the insulating layer 52. Next, a layer of an insulating material is formed on the insulating layer 52 and the etch stop layer. Next, the region where the via 530 is formed in the insulating material layer is etched away to a depth reaching the upper surface of the etch stop layer. Next, by removing the etch stop layer, the formation region of the via 530 including a part of the upper surface of the via 520 in the upper surface of the insulating layer 52 is exposed. Then, the via 530 is formed by filling the formed via hole with a paste of conductive material or molten metal. Thereby, the insulating layer 53 is formed on the insulating layer 52. A similar method can be used when forming the insulating layer 54 on the insulating layer 53.

  According to the audio signal processing apparatus 500 described above, the plurality of vias 520, 530, and 540 penetrating the plurality of insulating layers 52, 53, and 54 are provided in the second direction 102 so as to be shifted from each other. In the cross-sectional view of FIG. 4, the second connection region 210 is provided so as to be shifted in the second direction 102 with respect to the first connection region 110. Therefore, since the trouble of providing vias that are not parallel to the normal line can be saved, it is possible to easily reduce the local density of the current density, and to prevent generation of unnecessary radiation and hence deterioration of sound quality.

[Variation of Layer Configuration of Audio Signal Processing Device (3)]
FIG. 4 is a schematic diagram showing a modification (3) of the layer configuration of the audio signal processing device according to the present embodiment.

  As shown in this figure, the connection path 61 of the substrate 6 in the audio signal processing apparatus 600 of the present modification has at least one straight path connecting the first connection area 110 and the second connection area 210 inside. Including intermediate wiring layers 62 and 63 that electrically connect adjacent vias 520, 530, and 540 to each other. For example, the substrate 6 includes an intermediate wiring layer 62 between adjacent insulating layers 52 and 53. The vias 520 and 530 of these insulating layers 52 and 53 are electrically connected via an intermediate wiring layer 62 between the vias 520 and 530.

  Similarly, the substrate 6 includes an intermediate wiring layer 63 between adjacent insulating layers 53 and 54. The vias 530 and 540 of these insulating layers 53 and 54 are electrically connected via an intermediate wiring layer 63 between the vias 530 and 540.

  Conductive pads 620 and 630 may be provided through the contact areas of the intermediate wiring layers 62 and 63 with the vias 520, 530, and 540. Further, the conductive pad 620 covers an end surface of the via 520 on the second layer 20 side and an end surface of the via 530 on the first layer 10 side, and the conductive pad 630 includes an end surface of the via 530 on the second layer 20 side. The end surface of the via 540 on the first layer 10 side may be covered. It is preferable that the resistivity of the conductive pads 620 and 630 is substantially equal to the resistivity of the vias 520, 530, and 540.

  Here, the positional deviation amount Δ of the vias 520, 530, and 540 in the second direction 102, the length w of the vias 520, 530, and 540 in the second direction 102, and the relationship between the insulating layers 52, 53, and 54 are as follows. The positional deviation amount Δ of the vias 520, 530, and 540, the length w of the vias 520, 530, and 540, and the thickness d of the insulating layers 52, 53, and 54 in the modification (2) described above are the same. It may be. However, in this modification (3), the length in the thickness direction of the substrate 6 from the end surface of the via 520 on the first layer 10 side to the end surface of the via 530 on the first layer 10 side is the insulating layer. 52 and the thickness d1 of the intermediate wiring layer 62. Therefore, instead of the thicknesses of the insulating layers 52, 53, 54, the thicknesses of the insulating layers 52, 53, 54 and the intermediate wiring layers 62, 63 may be used.

  FIG. 5A is a schematic diagram illustrating the positional relationship between the vias 520, 530, and 540. 5 shows a simplified configuration of the substrate 6 when the substrate 6 is viewed in plan from the first layer 10 or the second layer 20 side, and the via 520 is a dotted line and the via 530 is a broken line. 540 is indicated by a solid line.

  As shown in this figure, each of the plurality of vias 520, 530, and 540 is longer in the second direction 102 than in the third direction 103 perpendicular to the second direction 102 in the in-plane direction of the substrate 6. Is getting bigger.

  In addition, the plurality of vias 520, 530, and 540 are arranged sequentially shifted in the second direction 102 from the first layer 10 toward the second layer 20 in the plan view of the substrate 6, and adjacent vias 520. 530 and 540 overlap in the third direction 103. As shown in FIG. 5B, the vias 530 and 540 may be provided apart from the vias 520 and 530 adjacent to the first layer 10 side in the third direction 103. Even in this case, the vias 520, 530, and 540 are electrically connected via the intermediate wiring layers 62 and 63. However, since the audio signal is bent in the third direction 103 when transmitted between the vias 520, 530, and 540, it is preferable that the amount of displacement in the third direction 103 is small.

  Here, a method of forming the insulating layer 53 on the insulating layer 52 so that the vias 520 and 530 are displaced from each other with the conductive pad 620 of the intermediate wiring layer 62 interposed therebetween will be described. First, the intermediate wiring layer 62 is provided on the upper surface of the insulating layer 52 so that the conductive pad 620 is formed over the upper surface of the via 520 and the formation region of the via 530. Next, an insulating material layer is formed on the intermediate wiring layer 62. Next, the conductive pad 620 is used as an etch stop, and the formation region of the via 530 in the insulating material layer is removed by etching to a depth reaching the upper surface of the conductive pad 620, whereby the upper surface of the intermediate wiring layer 62 (of the conductive pad 620). In the upper surface), the formation region of the via 530 is exposed. Then, the via 530 is formed by filling the formed via hole with a paste of conductive material or molten metal. Thereby, the insulating layer 53 is formed on the insulating layer 52 with the intermediate wiring layer 62 interposed therebetween. A similar method can be used when the insulating layer 54 is formed on the insulating layer 53 with the intermediate wiring layer 63 interposed therebetween.

  According to the audio signal processing apparatus 600 described above, since the conductive pads 620 and 630 of the intermediate wiring layers 62 and 63 are interposed between the vias 520, 530, and 540, the vias 520, 530, and 540 are arranged in the second direction 102. Even when the position is shifted, it is possible to prevent the width of the transmission path of the audio signal from being narrowed. In addition, since the intermediate wiring layer 62 can be used as an etch stop, the positions of the vias 520, 530, and 540 are shifted in the second direction 102, compared with the case where the insulating layers 52, 53, and 54 are directly stacked. The audio signal processing apparatus 600 can be easily manufactured.

[Functional configuration of audio signal processing device]
FIG. 6 is a block diagram showing a functional configuration of the audio signal processing apparatus according to the present embodiment. As shown in this figure, the audio signal processing devices 100, 400, 500, and 600 include an input unit 70, a signal processing unit 71, and an output unit 72, and the input unit 70, the signal processing unit 71, and the output. At least one of the portions 72 is formed including the above-described substrates 1, 4, 5, 6. Further, the wiring connecting the input unit 70 and the signal processing unit 71 and / or the wiring connecting the signal processing unit 71 and the output unit 72 may be formed including the above-described substrates 1, 4, 5, and 6. The signal processing unit 71 may include a power supply and a clock signal generation unit, and any of these power supply and clock signal generation unit is formed including the substrates 1, 4, 5, and 6. Also good.

  The input unit 70 receives the audio signal and provides it to the signal processing unit 71. For example, the input unit 70 may be connected to a storage device or the like that stores audio data by wire, or may be connected to a broadcasting station or the like wirelessly.

  The signal processing unit 71 performs signal processing on the audio signal provided from the input unit 70 and provides the signal to the output unit 72. For example, the signal processing may be signal processing such as A / D conversion and noise removal.

  The output unit 72 outputs a sound corresponding to the audio signal provided from the signal processing unit 71. For example, the output unit 72 converts the audio signal from the signal processing unit 71 into an audible band sound and outputs the sound. As an example, the output unit 72 may be an earphone, a headphone, a speaker, or the like.

  As mentioned above, although this invention was demonstrated using embodiment, the technical scope of this invention is not limited to the range as described in the said embodiment. It will be apparent to those skilled in the art that various modifications or improvements can be added to the above-described embodiment. It is apparent from the scope of the claims that the embodiments added with such changes or improvements can be included in the technical scope of the present invention.

  For example, in the above-described embodiment, it has been described that the substrates 1, 4, 5, and 6 are included in the audio signal processing apparatuses 100, 400, 500, and 600, but are included in other apparatuses that transmit signals internally. May be.

  The order of execution of each process such as operations, procedures, steps, and stages in the apparatus, system, program, and method shown in the claims, the description, and the drawings is particularly “before” or “prior to”. It should be noted that the output can be realized in any order unless the output of the previous process is used in the subsequent process. Regarding the operation flow in the claims, the description, and the drawings, even if it is described using “first”, “next”, etc. for convenience, it means that it is essential to carry out in this order. It is not a thing.

1 substrate, 4 substrate, 5 substrate, 6 substrate, 10 first layer, 11 first conductive path, 12 first point, 20 second layer, 21 second conductive path, 22 second point, 30 insulating layer, 31 connection Path, 41 connection path, 51 connection path, 52 insulating layer, 53 insulating layer, 54 insulating layer, 62 intermediate wiring layer, 63 intermediate wiring layer, 70 input section, 71 signal processing section, 72 output section, 90 insulating layer, 92 Layer, 93 layer, 100 audio signal processing device, 101 first direction, 102 second direction, 103 third direction, 109 current path, 110 first connection region, 210 second connection region, 310 via, 400 audio signal Processing device, 410 via, 500 audio signal processing device, 520 via, 530 via, 540 via, 600 audio signal processing device, 620 conductive pad, 630 conductive Pads, 900 via, 920 conductive paths, 930 conductive paths

Claims (10)

A first conductive path provided in the first layer of the substrate;
A second conductive path provided in a second layer different from the first layer of the substrate;
A connection path connected to the first conductive path in a first connection area and connected to the second conductive path in a second connection area;
With
The first conductive path extends in the first direction from the first connection region,
The second conductive path extends from the second connection region in a direction including, as a component, a second direction opposite to the first direction,
The second connection region is arranged so as to be shifted in the second direction with respect to the first connection region in a cross-sectional view of the substrate.
Said connection path, viewed it contains at least one straight path connecting between the first connection region and the second connection region to the interior,
The connection path includes a plurality of vias and an intermediate wiring layer that electrically connects the vias included in the plurality of vias;
The plurality of vias are arranged sequentially shifted in the second direction from the first layer toward the second layer in a cross-sectional view of the substrate,
The via included in the plurality of vias has an overlap with an adjacent via and a thickness direction of the substrate in a cross-sectional view of the substrate .   The audio signal processing apparatus according to claim 1, wherein the second connection region overlaps the first connection region in a thickness direction of the substrate. The shift amount in the second direction between the first via of the plurality of vias and the second via adjacent to the first via on the second layer side is:
0.4 to 2.0 times the length in the thickness direction of the substrate from the end surface on the first layer side of the first via to the end surface on the first layer side of the second via The audio signal processing apparatus according to claim 1 or 2 . Wherein the plurality of vias in a plan view of the substrate, are arranged offset sequentially in the second direction from the first layer toward the second layer, and, claim with an overlap between adjacent vias 1 audio signal processing apparatus according to any one of 3. The substrate has an insulating layer between the first layer and the second layer;
Said connection path, the audio signal processing apparatus according to any one of 4 claims 1 extending through the insulating layer. When the area of the first connection region is S1, and the area of the second connection region is S2,
0.8 × S1 <audio signal processing apparatus according S2 claim 1 that satisfies <1.2 × S1 in any one of 5. The audio signal processing device according to any one of claims 1 to 6 , wherein the first conductive path, the connection path, and the second conductive path transmit an audio signal. The audio signal processing device according to any one of claims 1 to 7 , wherein the second conductive path extends in the second direction from the second connection region. Wherein through said connection path from a first conductive path, the audio signal processing apparatus according to any one of claims 1 to 8 comprising a current path flowing to the second conductive path. A method for manufacturing an audio signal processing device, comprising:
Forming a first conductive path extending in a first direction from the first connection region in the first layer of the substrate;
Forming a connection path in contact with the first conductive path at the first connection region between the first layer and the second layer of the substrate;
A second conductive layer connected to the connection path at a second connection region and extending from the second connection region in a direction including a second direction opposite to the first direction as a component; Forming a road,
With
The second connection region is arranged so as to be shifted in the second direction with respect to the first connection region in a cross-sectional view of the substrate.
Said connection path, viewed it contains at least one straight path connecting between the first connection region and the second connection region to the interior,
The connection path includes a plurality of vias and an intermediate wiring layer that electrically connects the vias included in the plurality of vias;
The plurality of vias are arranged sequentially shifted in the second direction from the first layer toward the second layer in a cross-sectional view of the substrate,
The via included in the plurality of vias overlaps in the thickness direction of the substrate with an adjacent via in a cross-sectional view of the substrate .

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