JP4728032B2 - Semiconductor device and manufacturing method of semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device including a semiconductor chip, a support substrate that supports the semiconductor chip, and a method of manufacturing such a semiconductor device.

2. Description of the Related Art Conventionally, a semiconductor device is provided that includes a semiconductor chip and a support substrate that supports the semiconductor chip on one surface, and the other surface of the support substrate faces the surface of the mounting substrate (wiring substrate). Are known.
The support substrate has an internal terminal electrically connected to the semiconductor chip formed on one surface to which the semiconductor chip is bonded, and an electrical connection with a land (electrode) on the mounting substrate on the other surface opposite to the one surface. External terminals for connection are formed. Further, a groove is formed on the end face of the support substrate, and the internal terminal and the external terminal are electrically connected by a connection wiring formed along the inner surface of the groove.

Such a support substrate cuts a dicing blade or the like along a cutting line (dicing line) set in a lattice shape from an insulating original substrate on which internal terminals, external terminals, and connection wirings are patterned. It is obtained by cutting with a tool. More specifically, in the state of the original substrate, the internal terminal is formed across the cutting line on one surface of the original substrate. Further, the external terminal is formed at a position facing the internal terminal on the other surface of the original substrate. Furthermore, a through hole penetrating the internal terminal, the original substrate and the external terminal is formed across the cutting line, and a metal plating layer is deposited on the inner surface of the through hole. Therefore, when the original board is cut along the cutting line, the internal terminals and the external terminals are divided into the supporting boards on both sides of the cutting line, and the through holes are divided into grooves on the end faces of the supporting boards on both sides of the cutting line. Thus, a support substrate having a configuration in which the internal terminal and the external terminal are connected by the connection wiring attached to the inner surface of the groove is obtained. For example, the semiconductor chip is bonded to a bonding region surrounded by a cutting line before the original substrate is cut into the support substrate.
Japanese Patent No. 3214619

  However, since the external terminal made of metal has ductility, when it is cut by the cutting tool, it extends by being pulled by a cutting tool that is inserted so as to come out from one side of the original substrate to the other side, so-called metal. May cause burrs. Such a metal flash of the external terminal may cause a mounting failure of the semiconductor device on the mounting substrate. That is, when the metal beam comes into contact with the surface of the mounting substrate and the semiconductor device is lifted from the mounting substrate, there is a risk of causing a connection failure between the external terminal and the land on the surface of the mounting substrate.

  SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a semiconductor device that does not cause a mounting failure (connection failure between an external terminal and a land on a mounting substrate) due to a metal beam of an external terminal, and a method for manufacturing such a semiconductor device. It is.

According to a first aspect of the present invention for achieving the above object, in the semiconductor device, the semiconductor chip and the semiconductor chip are supported on one surface, have a linear edge, and extend inward from the edge. A support substrate formed by penetrating in a thickness direction, an internal terminal provided on the one surface of the support substrate and electrically connected to the semiconductor chip, and the one surface of the support substrate provided on the other surface opposite to the external terminal from the edge of the supporting substrate and extending inwardly of the supporting substrate, are formed on the inner surface of the groove, the one surface and the other surface of the support substrate passes between the internal terminal and includes a connection wiring and for connecting the external terminals, the external terminals are arranged so as to be in contact with the edge of the supporting substrate, a thin portion having a relatively small thickness When the support from the edge Disposed inwardly away of the plate, it is characterized in that it comprises integrally a thick portion having a relatively large thickness.

  According to this configuration, the external terminal is disposed along the edge of the support substrate, and has a thin portion having a relatively small thickness, and is disposed inward with respect to the thin portion, and has a relatively large thickness. And a thick portion having the same. That is, the external terminal is formed such that a portion (thin portion) on the edge side of the support substrate is relatively thin and a portion (thick portion) on the inner side of the support substrate is relatively thick. Therefore, even when a metal flash occurs in the thin part of the external terminal during the manufacture of the semiconductor device, if the length of the metal flash is equal to or less than the step between the thin part and the thick part, the semiconductor device is mounted on the mounting substrate. The metal beam does not contact the surface of the mounting substrate. Therefore, there is no possibility of causing a mounting failure such as a connection failure between the external terminal and the land on the mounting substrate.

The semiconductor device having such a configuration can be manufactured by, for example, a manufacturing method described in claim 3.
The invention according to claim 3 is a method of manufacturing a semiconductor device comprising a semiconductor chip and a support substrate that supports the semiconductor chip, and is a region straddling a predetermined cutting line on one surface of the original substrate having insulation. And forming the one side metal layer on the other side opposite to the one side of the original substrate at a position facing the one side metal layer in a direction perpendicular to the one side. A step of forming a metal layer, a step of continuously forming the other side metal layer and the original substrate at a position straddling the cutting line, a surface of the other side metal layer, the continuous A first plating step of depositing a first metal plating layer on an inner surface of the through hole and a portion of the one side metal layer facing the continuous through hole; and on the surface of the first metal plating layer, along the cutting line Elongate, A second plating step of depositing a second metal plating layer on a region excluding a region having a predetermined width (a region narrower than the other-side metal layer) straddling the cutting line; and after the second plating step The original substrate and the cutting tool are moved relative to each other so that the cutting tool is pulled out from the one surface side of the original substrate to the other surface side, and the original substrate is cut along the cutting line, And a cutting step of cutting the original substrate into individual pieces of the support substrate.

According to this method, after the first metal plating layer is formed on the surface of the other metal layer on the other surface of the original substrate, the region excluding the predetermined width on the cutting line on the surface of the first metal plating layer In addition, a second metal plating layer is formed. Thereafter, the original substrate is cut along the cutting line by the cutting tool.
At the time of cutting the original substrate, only the other side metal layer and the first metal plating layer are formed on the region along the cutting line on the other surface of the original substrate, and the other side metal is formed on the other region. A layer, a first metal plating layer, and a second metal plating layer are formed. That is, the metal layer on the region along the cutting line is formed thinner than the metal layer on the other region. Therefore, by moving the cutting tool so that it can be pulled out from one side of the original substrate to the other side, even if a metal flash occurs in the metal layer on the region along the cutting line, the length of the metal flash is the first. If the thickness is smaller than the thickness of the two metal plating layer, the metal beam does not contact the surface of the mounting substrate when the semiconductor device manufactured by this manufacturing method is mounted on the mounting substrate. Therefore, there is no possibility of causing a mounting failure such as a connection failure between the external terminal and the land on the mounting substrate.

  When the original substrate is cut along the cutting line, the one-side metal layer straddling the cutting line is divided into two, and each part after the division becomes an internal terminal of the support substrate on both sides of the cutting line. Further, the first metal plating layer deposited on the inner surface of the continuous through hole and the continuous through hole of the one side metal layer is divided into two by cutting along the cutting line, and each part after the cutting is cut into the cutting line. It becomes a connection wiring connected to the internal terminal of the support substrate on both sides of. Furthermore, the other side metal layer and the first metal plating layer were divided into two parts, and each part of the support substrate was attached to each part after the division of the other side metal layer and the first metal plating layer and the first metal plating layer. The second metal plating layer becomes an external terminal.

According to a second aspect of the present invention, there is provided the semiconductor device according to the first aspect, wherein the semiconductor device is provided on a side opposite to the support substrate with respect to the thin portion, and is less than or equal to a difference between the thickness of the thin portion and the thickness of the thick portion. It further comprises a flash preventing layer having a thickness of 5 mm.
The semiconductor device having such a configuration can be manufactured by, for example, a manufacturing method described in claim 4.

The invention according to claim 4 is a method of manufacturing a semiconductor device including a semiconductor chip and a support substrate that supports the semiconductor chip, and is provided in a region straddling a predetermined cutting line on one surface of the insulating original substrate. , The step of forming the one side metal layer, and the other side metal at a position facing the one side metal layer in a direction perpendicular to the one side on the other side opposite to the one side of the original substrate. Forming a layer, forming a continuous through hole continuously passing through the other metal layer and the original substrate at a position across the cutting line, a surface of the other metal layer, and the continuous through A first plating step of depositing a first metal plating layer on an inner surface of the hole and a portion of the one side metal layer facing the continuous through hole; and on the other surface of the original substrate after the first plating step, The cutting line And an insulating resin layer forming step of forming an insulating resin layer made of an insulating resin so as to cover the first metal plating layer on the other metal layer over the entire width in the direction along the cutting line, A second plating step for depositing a second metal plating layer on the surface of the first metal plating layer; and after the second plating step, the original substrate and the cutting tool are connected to each other side of the original substrate. And a cutting step of cutting the original substrate along the cutting line and cutting the original substrate into individual pieces of a support substrate.

  According to this method, after the first metal plating layer is formed on the surface of the other side metal layer on the other side of the original substrate, the first metal plating layer is formed on the cutting line so that the first metal plating layer has a full width in the direction along the cutting line. An insulating resin layer is formed so as to cover the entire surface. Then, after the second metal plating layer is formed on the surface of the first metal plating layer, the original substrate is cut along the cutting line, thereby being cut into individual pieces of the support substrate.

  When the original substrate is cut along the cutting line, the one-side metal layer straddling the cutting line is divided into two, and each part after the division becomes an internal terminal of the support substrate on both sides of the cutting line. Further, by cutting along the cutting line, the first metal plating layer and the second metal plating layer deposited on the inner surface of the continuous through hole and the continuous through hole of the one side metal layer are divided into two, and after the division Each part becomes a connection wiring connected to the internal terminals of the support substrate on both sides of the cutting line. Furthermore, the other side metal layer and the first metal plating layer were divided into two parts, and each part of the support substrate was attached to each part after the division of the other side metal layer and the first metal plating layer and the first metal plating layer. The second metal plating layer becomes an external terminal. And when the other side metal layer and the 1st metal plating layer are divided, the insulating resin layer on the 1st metal plating layer is also divided into two, and each part of the insulating resin layer after the division is a flash prevention layer. It becomes.

  When cutting the original substrate, the cutting tool is moved so as to come out from the one surface side of the original substrate to the other surface side. In the moving direction of the cutting tool with respect to the original substrate, the insulating resin layer exists on the downstream side of the first metal plating layer. Therefore, it can prevent that the metal which comprises a 1st metal plating layer is pulled by the cutting tool, and can extend, and it can prevent that a metal flash generate | occur | produces in an external terminal. Therefore, the semiconductor device manufactured by this method does not have a metal beam on the external terminal, and may cause a mounting failure such as a connection failure between the external terminal and the land on the mounting substrate when mounted on the mounting substrate. There is no. Further, there is no possibility of causing a problem such as an electrical short circuit between external terminals due to a metal beam.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a perspective view schematically showing a configuration of a semiconductor device according to an embodiment of the present invention. The semiconductor device includes a support substrate 1, a semiconductor chip 2 supported on one surface 1A of the support substrate 1 (upper surface in FIG. 1, hereinafter referred to as “upper surface 1A”), an upper surface 1A of the support substrate 1, and the semiconductor chip. 2 and a sealing resin 3 for sealing 2.

Supporting substrate 1, a resin having an insulating property (for example, glass epoxy resin) consists, have a rectangular plate shape, that has four straight edges.
On the upper surface 1A of the support substrate 1, a plurality of (in this embodiment, three) internal terminals 4 are arranged at predetermined intervals in the direction along each side edge at each end of one side and the other side. Has been. Each internal terminal 4 is made of, for example, copper and is formed in a rectangular thin plate shape extending inwardly from an edge of the upper surface 1A of the support substrate 1.

  Further, on the upper surface 1A of the support substrate 1, a die pad 5 having a rectangular shape in a plan view made of copper, for example, is formed in the center between both end portions where the internal terminals 4 are formed. The die pad 5 has substantially the same width (dimension) as the support substrate 1 in the direction along the arrangement direction of the plurality of internal terminals 4 at each end, and substantially the same as the semiconductor chip 2 in the direction orthogonal to the arrangement direction. Have the same width.

On the other hand, in the other surface 1B opposite to the upper surface 1A of the support substrate 1 (the lower surface in FIG. 1, hereinafter referred to as “lower surface 1B”), the thickness direction of the support substrate 1 (the direction orthogonal to the upper surface 1A and the lower surface 1B). The external terminals 6 are formed at positions facing the internal terminals 4 and at a plurality of positions facing the die pad 5, respectively.
As shown in FIG. 2, each external terminal 6 extends inward of the support substrate 1 from each linear end edge of the lower surface 1 </ b> B of the support substrate 1 . Each external terminal 6 is provided along the linear edge of the lower surface 1B of the support substrate 1 and is disposed inward with respect to the thin portion 61 having a relatively small thickness, And a thick portion 62 having a large thickness. That is, the thin part 61 is disposed so as to contact the linear edge of the lower surface 1B of the support substrate 1, and the thick part 62 is disposed at a position away from the linear edge toward the inside of the support substrate 1. Has been.

  A flash prevention layer 18 made of an insulating resin (for example, solder resist) is provided below the thin portion 61 of each external terminal 6. The flash prevention layer 18 has a thickness substantially equal to the difference between the thickness of the thin portion 61 and the thickness of the thick portion 62 (step difference between the thin portion 61 and the thick portion 62), and in the longitudinal direction of the external terminal 6. It has the same width as the thin part 61. Thus, the surface (lower surface) of the flash prevention layer 18 is located on the same plane as the surface (lower surface) of the thick portion 62 of the external terminal 6 and is continuous with the surface of the thick portion 62 without a step.

The four end faces 1C of the support substrate 1 have semicircular cross-sections that pass through the external terminals 6 and the support substrate 1 in the thickness direction and are recessed inwardly from the linear edge of the support substrate 1. A groove 7 having a shape is formed.
A connection wiring 8 made of a thin metal layer is formed on the inner surface of each groove 7. Each connection wiring 8 has an end portion (upper end portion) on the upper surface 1 </ b> A side of the support substrate 1 connected to the internal terminal 4 or the die pad 5. In addition, as shown in FIG. 2, each connection wiring 8 has an end (lower end) on the lower surface 1 </ b> B side connected to the external terminal 6. As a result, the internal terminal 4 and the external terminal 6 facing this are electrically connected via the connection wiring 8, and the die pad 5 and the external terminal 6 facing this are electrically connected via the connection wiring 8. Has been.

  As shown in FIG. 1, the semiconductor chip 2 is die-bonded on the die pad 5 with the surface (device forming surface) on which the functional element is formed facing upward. A plurality of (six in this embodiment) pads 9 are formed on the surface of the semiconductor chip 2. Each pad 9 is electrically connected (wire bonded) to the internal terminal 4 by a bonding wire 10.

The semiconductor device is mounted on the mounting substrate by causing the lower surface 1B of the support substrate 1 to face a mounting substrate (wiring substrate) (not shown) and bonding the external terminals 6 to lands (electrodes) on the mounting substrate. Is achieved.
3A to 3G are views for explaining a method of manufacturing this semiconductor device. In the semiconductor device, for example, in a state of a larger original substrate 11 before being cut into the support substrate 1, after the semiconductor chip 2 is bonded onto one surface (upper surface) 11 </ b> A of the original substrate 11, It is obtained by cutting the original substrate 11 with a cutting tool 12 such as a dicing blade along a cutting line (dicing line) L set in a lattice shape surrounding the periphery.

  For example, a metal layer (for example, a copper layer) is initially formed on the entire upper surface 11A of the original substrate 11 and the other surface (lower surface) 11B on the opposite side. Then, by patterning each metal layer, a plurality of upper metal layers 13 are formed across the cutting line L on the upper surface 11A of the original substrate 11, and each upper metal layer 13 and the original substrate 11 are formed on the lower surface 11B. The lower metal layer 14 is formed across the cutting line L at positions facing each other in the thickness direction (direction orthogonal to the upper surface 11A and the lower surface 11B).

Thereafter, as shown in FIGS. 3A and 3B, a continuous through hole 15 having an elliptical cross section continuously penetrating each lower metal layer 14 and the original substrate 11 is formed at a position straddling the cutting line L. The continuous through hole 15 can be formed by, for example, laser processing or etching processing from the lower surface 11B side of the original substrate 11.
Subsequently, as shown in FIG. 3C, by copper plating from the lower surface 11 </ b> B side of the original substrate 11, the surface (lower surface) of the lower metal layer 14, the inner surface of the continuous through hole 15, and the continuous through hole 15 of the upper metal layer 13. A copper plating layer 16 is formed (deposited) on the portion facing the surface.

Thereafter, as shown in FIGS. 3D and 3E, the copper plating layer 16 straddling the cutting line L and covering the surface of the lower metal layer 14 is covered over the entire width in the direction along the cutting line L. Then, an insulating resin layer 19 made of an insulating resin is formed.
After the formation of the insulating resin layer 19, nickel plating and gold plating from the lower surface 11B side of the original substrate 11 are continuously performed. As a result, as shown in FIG. 3F, a nickel / gold plating layer 17 in which a nickel plating layer and a gold plating layer are laminated is formed (deposited) on the surface of the copper plating layer 16. This plating process is continued until the surface (lower surface) of the nickel / gold plating layer 17 on the lower surface 11B of the original substrate 11 is positioned substantially on the same plane as the surface (lower surface) of the insulating resin layer 19.

  After the nickel / gold plating layer 17 is formed, the semiconductor chip 2 is bonded onto each die pad 5 on the upper surface 11A of the original substrate 11, and the pad 9 of each semiconductor chip 2 is electrically connected to the internal terminal 4 by the bonding wire 10. 3G, the cutting tool 12 is inserted so as to come out from the upper surface 11A side of the original substrate 11 to the lower surface 11B side, and the original substrate 11 is cut along the cutting line L. 11 is cut into individual pieces of the support substrate 1.

  As shown in FIG. 4, the upper metal layer 13 straddling the cutting line L is divided into two by this cutting, and each part after the cutting becomes the internal terminals 4 of the support substrate 1 on both sides of the cutting line L. Further, by cutting along the cutting line L, the continuous through hole 15 straddling the cutting line L is divided as the grooves 7 on the end surface 1C of the support substrate 1 on both sides of the cutting line L. At this time, the copper plating layer 16 and the nickel / gold plating layer 17 deposited on the inner surface of the continuous through hole 15 (groove 7) and the continuous through hole 15 of the upper metal layer 13 are divided into two parts. The portion becomes the connection wiring 8 connected to the internal terminal 4 of the support substrate 1 on both sides of the cutting line L. Further, the lower metal layer 14 and the copper plating layer 16 are divided into two parts. In each support substrate 1, the parts after the division and the nickel / gold plating layer 17 deposited on the surface thereof are connected to the external terminals 6. Become. Furthermore, together with the lower metal layer 14 and the copper plating layer 16, the insulating resin layer 19 straddling the cutting line L is divided into two parts, and each part after the division is prevented from flashing the support substrate 1 on both sides of the cutting line L. Layer 18 is formed. In the external terminal 6, the portion sandwiched between the lower surface 1B of the support substrate 1 and the flash prevention layer 18 becomes a thin portion 61 having a relatively small thickness, and the portion not in contact with the flash prevention layer 18 is The thick portion 62 has a relatively large thickness.

  As described above, after the copper plating layer 16 is formed on the surface of the lower metal layer 14 on the lower surface 11B of the original substrate 11, on the cutting line L, the copper plating layer 16 is moved along the cutting line L. An insulating resin layer 19 is formed so as to cover the entire width. Then, after the nickel / gold plating layer 17 is formed on the surface of the copper plating layer 16, the original substrate 11 is cut along the cutting line L to be cut into individual pieces of the support substrate 1.

  When the original substrate 11 is cut, the cutting tool 12 is moved so as to come out from the upper surface 11A side of the original substrate 11 to the lower surface 11B side. In the moving direction of the cutting tool 12 relative to the original substrate 11, the insulating resin layer 19 exists on the downstream side of the copper plating layer 16. Therefore, it is possible to prevent the metal constituting the copper plating layer 16 from being pulled and extended by the cutting tool 12, and it is possible to prevent the metal flash from being generated on the external terminal 6. Therefore, this semiconductor device does not have a metal beam on the external terminal 6, and there is no possibility of causing a mounting failure such as a connection failure between the external terminal 6 and a land on the mounting substrate when mounted on the mounting substrate. Further, there is no possibility of causing a problem such as an electrical short circuit between external terminals due to a metal beam.

  Although one embodiment of the present invention has been described above, the present invention can be implemented in other forms. For example, in the above embodiment, the flash prevention layer 18 provided below the thin portion 61 of each external terminal 6 has a thickness substantially equal to the difference between the thickness of the thin portion 61 and the thickness of the thick portion 62. In addition, it has the same width as the thin portion 61 in the longitudinal direction of the external terminal 6. However, the thickness of the flash prevention layer 18 may be smaller than the difference between the thickness of the thin part 61 and the thickness of the thick part 62. Further, in the longitudinal direction of the external terminal 6, the width of the flash prevention layer 18 may be smaller than the width of the thin portion 61. That is, the flash prevention layer 18 may be provided so as to be accommodated in the space formed by the step between the thin portion 61 and the thick portion 62 of the external terminal 6.

  Further, the flash prevention layer 18 is not necessarily required, and the flash prevention layer 18 may be omitted. For example, as shown in FIG. 3C, the semiconductor device having the configuration in which the flash prevention layer 18 is omitted is provided on the surface of the lower metal layer 14, the inner surface of the continuous through hole 15, and the portion facing the continuous through hole 15 of the upper metal layer 13. After the copper plating layer 16 is formed, the surface of the copper plating layer 16 extends along the cutting line L and is cut without performing the step of forming the insulating resin layer 19 shown in FIGS. 3D and 3E. It can be manufactured by forming the nickel / gold plating layer 17 in a region excluding a region having a predetermined width across the line L. Even in the configuration in which the flash prevention layer 18 is omitted, the external terminal 6 has the thin portion 61 and the thick portion 62, and therefore, a metal flash occurs in the thin portion 61 of the external terminal 6 when the semiconductor device is manufactured. Even if the length of the metal beam is equal to or less than the step between the thin portion 61 and the thick portion 62, the metal beam does not contact the surface of the mounting substrate when the semiconductor device is mounted on the mounting substrate. . Therefore, there is no possibility of causing a mounting failure such as a connection failure between the external terminal and the land on the mounting substrate.

  In addition, various design changes can be made within the scope of matters described in the claims.

1 is a perspective view schematically showing a configuration of a semiconductor device according to an embodiment of the present invention. FIG. 2 is a perspective view of the vicinity of a connection wiring of the semiconductor device shown in FIG. 1. It is a figure for demonstrating the manufacturing method (process of forming a continuous through-hole) of the semiconductor device shown in FIG. 1, Comprising: The lower surface of the support substrate is shown schematically. FIG. 3B is a view for explaining the method for manufacturing the semiconductor device shown in FIG. 1 (step of forming a continuous through hole), and is a cross-sectional view when the semiconductor device is cut along a cutting line AA shown in FIG. 3A. It is a figure for demonstrating the manufacturing method (The process (1st plating process) of forming a copper plating layer) of the semiconductor device shown in FIG. 1, Comprising: When the semiconductor device is cut | disconnected by the cutting line AA shown to FIG. 3A FIG. It is a figure for demonstrating the manufacturing method (The process of forming an insulating resin layer (insulating resin layer forming process)) of the semiconductor device shown in FIG. 1, Comprising: The lower surface of the support substrate is shown schematically. It is a figure for demonstrating the manufacturing method (insulation resin layer formation process) of the semiconductor device shown in FIG. 1, Comprising: It is sectional drawing when a semiconductor device is cut | disconnected by the cutting line BB shown to FIG. 3D. FIG. 3 is a diagram for explaining a method of manufacturing the semiconductor device shown in FIG. 1 (step of forming a nickel / gold plating layer (second plating step)), and cutting the semiconductor device along a cutting line BB shown in FIG. 3D It is sectional drawing when doing. FIG. 3 is a diagram for explaining a method for manufacturing the semiconductor device shown in FIG. 1 (step of cutting an original substrate into individual pieces of a support substrate (cutting step)), and cutting the semiconductor device along a cutting line BB shown in FIG. 3D It is sectional drawing when doing. It is sectional drawing of the edge part of the semiconductor device shown in FIG.

Explanation of symbols

1 Support substrate 1A Upper surface (one surface)
1B Lower surface (the other surface)
2 Semiconductor chip 4 Internal terminal 5 Die pad (internal terminal)
6 External terminal 8 Connection wiring 11 Original substrate 11A Upper surface (one surface)
11B Lower surface (the other surface)
12 Cutting tool 13 Upper metal layer (one side metal layer)
14 Lower metal layer (other metal layer)
15 Continuous through hole 16 Copper plating layer (first metal plating layer)
17 Nickel / gold plating layer (second metal plating layer)
18 Burr prevention layer 19 Insulating resin layer 61 Thin part 62 Thick part L Cutting line

Claims (4)

A semiconductor chip;
A support substrate that supports the semiconductor chip on one surface, has a linear edge, and a groove recessed inwardly from the edge is formed through the thickness direction; and
An internal terminal provided on the one surface of the support substrate and electrically connected to the semiconductor chip;
Provided on the other surface opposite to the one surface of the supporting substrate, and external terminals extending from said end edge of said supporting substrate toward the inside of the support substrate,
A wiring formed on the inner surface of the groove, penetrating between the one surface and the other surface of the support substrate, and connecting the internal terminal and the external terminal;
The external terminal, the are arranged in contact with the edge of the supporting substrate, and a thin portion having a relatively small thickness, disposed inwardly away of the supporting substrate from the edge, relative And a thick portion having a large thickness integrally therewith.   2. The flash prevention layer according to claim 1, further comprising a flash prevention layer provided on a side opposite to the support substrate with respect to the thin portion and having a thickness equal to or less than a difference between the thickness of the thin portion and the thickness of the thick portion. The semiconductor device described. A method of manufacturing a semiconductor device comprising a semiconductor chip and a support substrate that supports the semiconductor chip,
Forming one side metal layer in a region straddling a predetermined cutting line on one side of the original substrate having insulation; and
Forming the other side metal layer at a position opposite to the one side metal layer in a direction orthogonal to the one side on the other side opposite to the one side of the original substrate;
Forming a continuous through hole that continuously penetrates the other metal layer and the original substrate at a position across the cutting line;
A first plating step of depositing a first metal plating layer on a surface of the other side metal layer, an inner surface of the continuous through hole, and a portion of the one side metal layer facing the continuous through hole;
A second plating step of depositing a second metal plating layer on the surface of the first metal plating layer, excluding a region having a predetermined width extending along the cutting line and straddling the cutting line;
After the second plating step, the original substrate and the cutting tool are moved relative to each other so that the cutting tool comes out from the one surface side of the original substrate to the other surface side, and the original substrate is moved to the cutting line. And a cutting step of cutting the original substrate into individual pieces of the supporting substrate. A method of manufacturing a semiconductor device comprising a semiconductor chip and a support substrate that supports the semiconductor chip,
Forming one side metal layer in a region straddling a predetermined cutting line on one side of the original substrate having insulation; and
Forming the other side metal layer at a position opposite to the one side metal layer in a direction orthogonal to the one side on the other side opposite to the one side of the original substrate;
Forming a continuous through hole that continuously penetrates the other metal layer and the original substrate at a position across the cutting line;
A first plating step of depositing a first metal plating layer on a surface of the other side metal layer, an inner surface of the continuous through hole, and a portion of the one side metal layer facing the continuous through hole;
After the first plating step, on the other surface of the original substrate, straddling the cutting line and covering the first metal plating layer on the other metal layer over the entire width in the direction along the cutting line. And an insulating resin layer forming step of forming an insulating resin layer made of an insulating resin,
A second plating step of depositing a second metal plating layer on the surface of the first metal plating layer;
After the second plating step, the original substrate and the cutting tool are moved relative to each other so that the cutting tool comes out from the one surface side of the original substrate to the other surface side, and the original substrate is moved to the cutting line. And a cutting step of cutting the original substrate into individual pieces of the supporting substrate.

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