JP6615544B2 - Flow rate adjusting device and processing device - Google Patents

Description

  Embodiments described herein relate generally to a flow control device and a processing device.

  Devices for supplying fluid from a plurality of openings are known. For example, in a processing apparatus using plasma, a shower plate supplies gas from a plurality of openings.

JP 2010-21404 A

  In various apparatuses such as a shower plate, the amount of fluid supplied from each of the plurality of openings is constant and difficult to control individually.

A flow control device according to one embodiment includes a first wall, a plurality of second walls, an outer wall, and a pressure adjustment unit . The first wall has a first surface and a second surface located on the opposite side of the first surface. The plurality of second walls are respectively connected to the second surface at positions spaced apart from each other, form a plurality of openings that open to the first surface and allow fluid to pass through, and are deformed by deforming each of the plurality of second walls. The size of the opening can be changed. The outer wall includes the first wall and accommodates the plurality of second walls. The pressure adjusting unit changes the pressure between the plurality of second walls inside the outer wall. The outer wall includes, in the outer wall, a first room in which at least one of the plurality of second walls is disposed, and a portion farther from the center of the first wall than the first room. And a third wall forming a second chamber in which at least one of the plurality of second walls is disposed. The pressure adjusting unit makes the pressure in the first chamber different from the pressure in the second chamber.

FIG. 1 is a cross-sectional view schematically showing a semiconductor manufacturing apparatus according to the first embodiment. FIG. 2 is a bottom view of the shower plate according to the first embodiment. FIG. 3 is a cross-sectional view showing the shower plate of the first embodiment along the line F3-F3 of FIG. 4 is a cross-sectional view of the shower plate according to the first embodiment taken along line F4-F4 of FIG. FIG. 5 is a cross-sectional view showing the shower plate in which the cylindrical wall of the first embodiment is deformed. FIG. 6 is a cross-sectional view of the shower plate according to the second embodiment as viewed from below. FIG. 7: is sectional drawing which looked at the shower plate which concerns on 3rd Embodiment from the downward direction. FIG. 8 is a cross-sectional view schematically showing a semiconductor manufacturing apparatus according to the fourth embodiment. FIG. 9 is a cross-sectional view of the shower plate of the fourth embodiment as viewed from below. FIG. 10: is sectional drawing which looked at the shower plate which concerns on 5th Embodiment from the downward direction. FIG. 11: is sectional drawing which shows the shower plate which the cylinder wall concerning 6th Embodiment deform | transformed. FIG. 12 is a cross-sectional view showing a part of the shower plate according to the seventh embodiment.

  The first embodiment will be described below with reference to FIGS. 1 to 5. In the present specification, basically, a vertically upward direction is defined as an upward direction and a vertically downward direction is defined as a downward direction. In addition, a plurality of expressions may be written together for the constituent elements according to the embodiment and the description of the elements. It is not precluded that other expressions not described in the component and description are made. Furthermore, it is not prevented that other expressions are given for the components and descriptions in which a plurality of expressions are not described.

  FIG. 1 is a cross-sectional view schematically showing a semiconductor manufacturing apparatus 10 according to the first embodiment. The semiconductor manufacturing apparatus 10 is an example of a processing apparatus and a flow rate adjusting apparatus, and may be referred to as a manufacturing apparatus, an intake / exhaust apparatus, a supply apparatus, and an apparatus, for example.

  The processing apparatus is not limited to the semiconductor manufacturing apparatus 10 and may be another apparatus that performs processing such as processing, cleaning, and testing on the target object. The processing apparatus may be, for example, an apparatus for vapor deposition or dry etching. Further, the flow rate adjusting device is not limited to the semiconductor manufacturing apparatus 10 and may be another device for supplying or sucking a fluid such as liquid or gas.

  As shown in each drawing, in this specification, an X axis, a Y axis, and a Z axis are defined. The X axis, the Y axis, and the Z axis are orthogonal to each other. The X axis is along the width of the semiconductor manufacturing apparatus 10. The Y axis is along the depth (length) of the semiconductor manufacturing apparatus 10. The Z axis is along the height of the semiconductor manufacturing apparatus 10.

  The semiconductor manufacturing apparatus 10 of this embodiment manufactures a semiconductor wafer (hereinafter referred to as a wafer) 11 of a semiconductor device such as a three-dimensional NAND flash memory. The semiconductor manufacturing apparatus 10 manufactures a wafer 11 by growing, for example, a silicon film 13 on a substrate 12 by plasma CVD (chemical vapor deposition). The semiconductor manufacturing apparatus 10 is not limited to this, and other semiconductor devices may be manufactured, for example.

  As shown in FIG. 1, the semiconductor manufacturing apparatus 10 includes a manufacturing unit 21, a material supply apparatus 22, a refrigerant supply apparatus 23, a plurality of supply pipes 24, and a plurality of discharge pipes 25. The material supply device 22 is an example of a supply unit. The refrigerant supply device 23 is an example of a medium supply unit.

  The manufacturing unit 21 includes a housing 31, a stage 32, a vacuum pump 33, a power supply 34, and a shower plate 35. The stage 32 may also be referred to as a processing unit, a support unit, a placement unit, or a table, for example. The shower plate 35 may also be referred to as a flow path structure, a structure, a member, a feeding unit, or a flow rate adjusting device, for example.

  The casing 31 is formed in a sealable box shape. A chamber 31 a is provided inside the housing 31. The chamber 31a is an example of a processing chamber. The stage 32 and the shower plate 35 are accommodated in the chamber 31a. The semiconductor manufacturing apparatus 10 manufactures the wafer 11 in the chamber 31a.

  The vacuum pump 33 is connected to the chamber 31 a of the housing 31. The vacuum pump 33 sucks the gas in the chamber 31a. The vacuum pump 33 depressurizes the chamber 31a, for example, to make a vacuum. The operation of the vacuum pump 33 is not limited to this.

  The stage 32 has a support portion 32a. The support part 32a faces the positive direction (upward direction) along the Z axis and supports the substrate 12. The support part 32a supports the wafer 11 manufactured in the chamber 31a.

  The power supply 34 outputs a high-frequency alternating current. The power source 34 is connected to the stage 32. The power supply 34 applies a high-frequency voltage to the substrate 12 supported by the support portion 32 a via the stage 32. The operation of the power supply 34 is not limited to this.

  The shower plate 35 is disposed above the stage 32 at a position spaced from the stage 32. For this reason, the substrate 12 (wafer 11) supported by the support portion 32a of the stage 32 is located between the stage 32 and the shower plate 35 in the direction along the Z axis.

  FIG. 2 is a bottom view of the shower plate 35 of the first embodiment. FIG. 3 is a cross-sectional view showing the shower plate 35 of the first embodiment along the line F3-F3 of FIG. 4 is a cross-sectional view showing the shower plate 35 of the first embodiment along the line F4-F4 of FIG.

  As shown in FIG. 3, the shower plate 35 includes an outer wall 41 and a plurality of cylindrical walls 42. The outer wall 41 may be referred to as a housing or a wall, for example. The plurality of cylindrical walls 42 are examples of the second wall, the first cylindrical wall, and the second cylindrical wall, and may be referred to as, for example, a side wall, an inner wall, a deformed portion, or a flow path.

  The outer wall 41 has a bottom wall 45, an upper wall 46, a peripheral wall 47, and an intermediate wall 48. The bottom wall 45 is an example of a first wall. The outer wall 41 is formed in a substantially cylindrical box shape, for example, and accommodates a plurality of cylindrical walls 42. The shape of the outer wall 41 is not limited to this.

  The bottom wall 45 is formed in a substantially circular plate shape. The bottom wall 45 may be formed in another shape such as a quadrangle, for example. The bottom wall 45 has a first surface 45a and a second surface 45b.

  The first surface 45a is a substantially flat surface that faces in the negative direction (downward) along the Z-axis. The first surface 45 a forms the surface (outer surface) of the shower plate 35. For this reason, the first surface 45a faces the chamber 31a. The first surface 45a faces the stage 32 and the substrate 12 (wafer 11) supported by the stage 32.

  The second surface 45b is a substantially flat surface facing upward. The second surface 45b is located on the opposite side of the first surface 45a. For this reason, the second surface 45 b faces the inside of the outer wall 41 and forms the inner surface of the outer wall 41.

  Similar to the bottom wall 45, the upper wall 46 is formed in a substantially circular plate shape. The upper wall 46 may be formed in another shape such as a square. The upper wall 46 is disposed upward from the bottom wall 45 at a position spaced from the bottom wall 45. The upper wall 46 has a third surface 46a and a fourth surface 46b.

  The third surface 46a is a substantially flat surface facing upward. The third surface 46 a forms the surface (outer surface) of the shower plate 35. Therefore, the third surface 46a faces the chamber 31a.

  The fourth surface 46b is a substantially flat surface facing downward. The fourth surface 46b is located on the opposite side of the third surface 46a. For this reason, the fourth surface 46 b faces the inside of the outer wall 41 and forms the inner surface of the outer wall 41. The fourth surface 46 b faces the second surface 45 b of the bottom wall 45.

  The peripheral wall 47 is formed in a substantially cylindrical shape and extends in a direction along the Z axis. The peripheral wall 47 may be formed in other shapes such as a rectangular tube shape, for example. The peripheral wall 47 connects the peripheral edge of the bottom wall 45 and the peripheral edge of the upper wall 46. The peripheral wall 47 surrounds the plurality of cylindrical walls 42 accommodated in the outer wall 41.

  The middle wall 48 is formed in a substantially circular plate shape, like the bottom wall 45 and the top wall 46. The inner wall 48 may be formed in another shape such as a quadrangle, for example. The middle wall 48 is disposed between the bottom wall 45 and the upper wall 46 in the direction along the Z axis at a position separated from the bottom wall 45 and at a distance from the upper wall 46. The middle wall 48 has a fifth surface 48a and a sixth surface 48b.

  The fifth surface 48a is a substantially flat surface facing downward. The fifth surface 48 a faces the second surface 45 b of the bottom wall 45. The sixth surface 48b is a substantially flat surface facing upward. The sixth surface 48b is located on the opposite side of the fifth surface 48a. The sixth surface 48 b faces the fourth surface 46 b of the upper wall 46.

  Each of the plurality of cylindrical walls 42 is formed in a substantially cylindrical shape and extends in a direction along the Z axis. The cylinder wall 42 may be formed in other shapes such as a rectangular cylinder. In the present embodiment, the plurality of cylindrical walls 42 have the same shape. The plurality of cylindrical walls 42 may have different shapes.

  Each of the plurality of cylindrical walls 42 has a first end portion 42a and a second end portion 42b. The first end portion 42 a is an end portion of the cylindrical wall 42 in the downward direction, and is connected to the second surface 45 b of the bottom wall 45. The second end portion 42 b is an end portion of the cylindrical wall 42 in the upward direction, and is connected to the fifth surface 48 a of the middle wall 48.

  The plurality of cylindrical walls 42 are connected to the second surface 45b of the bottom wall 45 at positions spaced apart from each other. For example, the plurality of cylindrical walls 42 are arranged at substantially equal intervals in the direction along the X axis, and are arranged at substantially equal intervals in the direction along the Y axis. In addition, arrangement | positioning of the some cylinder wall 42 is not restricted to this.

  The plurality of cylindrical walls 42 form a plurality of openings 51. The opening 51 is provided inside each cylindrical wall 42 and extends in the direction along the Z axis. The opening 51 opens in the first surface 45a of the bottom wall 45 to which the first end portion 42a of the cylindrical wall 42 is connected. That is, the opening 51 opens into the chamber 31a. Furthermore, the opening 51 opens to the sixth surface 48b of the middle wall 48 to which the second end 45b of the cylindrical wall 42 is connected.

  Each of the plurality of cylindrical walls 42 further includes an inner peripheral surface 42c and an outer peripheral surface 42d. The inner peripheral surface 42 c is an inner surface of the cylindrical tube wall 42 and forms an opening 51. The outer peripheral surface 42d is the outer surface of the cylindrical cylindrical wall 42 and is located on the opposite side of the inner peripheral surface 42c.

  The thickness of the cylindrical wall 42 extending in the direction along the Z axis is substantially constant. In the present embodiment, the thickness of the cylindrical wall 42 is a distance between the inner peripheral surface 42 c and the outer peripheral surface 42 d in the radial direction of the cylindrical wall 42. Note that the thickness of the cylindrical wall 42 may be partially different.

上記（数１）式において、ｈは筒壁４２の厚さであり、αは筒壁４２の線膨張率であり、ΔＴは筒壁４２の内周面４２ｃと外周面４２ｄとの温度差であり、Ｌは筒壁４２のＺ軸に沿う方向における長さであり、ｄ_１は筒壁４２が変形した場合における筒壁４２の内径（開口５１）の最大の直径であり、ｄ_０は筒壁４２が変形した場合における筒壁４２の内径（開口５１）の最小の直径である。なお、筒壁４２の厚さは、他の条件によって設定されても良い。 The thickness of the cylindrical wall 42 is, for example, one tenth of the length (dimension in the direction along the Z axis) of the cylindrical wall 42. The thickness of the cylindrical wall 42 is not limited to this. The thickness of the cylindrical wall 42 is determined by, for example, the following equation (Equation 1).

In the above equation (1), h is the thickness of the cylindrical wall 42, α is the linear expansion coefficient of the cylindrical wall 42, and ΔT is the temperature difference between the inner peripheral surface 42c and the outer peripheral surface 42d of the cylindrical wall 42. Yes, L is the length of the cylindrical wall 42 in the direction along the Z-axis, d ₁ is the maximum diameter of the inner diameter (opening 51) of the cylindrical wall 42 when the cylindrical wall 42 is deformed, and d ₀ is the cylinder This is the minimum diameter of the inner diameter (opening 51) of the cylindrical wall 42 when the wall 42 is deformed. Note that the thickness of the cylindrical wall 42 may be set according to other conditions.

  The thickness of the bottom wall 45 is thicker than the thickness of each of the plurality of cylindrical walls 42. In the present embodiment, the thickness of the bottom wall 45 is a distance between the first surface 45a and the second surface 45b in a direction orthogonal to the first surface 45a. The thickness of the bottom wall 45 is constant, but may be partially different. When at least one of the thickness of the cylindrical wall 42 and the thickness of the bottom wall 45 is partially different, the average thickness of the bottom wall 45 is thicker than the average thickness of the cylindrical wall 42.

  A diffusion channel 53 is provided inside the outer wall 41. The diffusion channel 53 is a space located between the upper wall 46 and the middle wall 48 and surrounded by the peripheral wall 47. A plurality of openings 51 are opened in the diffusion channel 53. In other words, the plurality of openings 51 connect the diffusion flow path 53 and the chamber 31a.

  An internal cavity 55 is further provided inside the outer wall 41. The inner cavity 55 is an example of the inside of the outer wall. The internal cavity 55 is located between the bottom wall 45 and the middle wall 48 in the direction along the Z-axis, and when the bottom wall 45 is viewed in plan (XY plane), it is surrounded by the peripheral wall 47 and a plurality of cylindrical walls 42 is a space located outside 42. In other words, the internal cavity 55 is provided between the plurality of cylindrical walls 42. The cylindrical wall 42 separates the internal cavity 55 and the opening 51.

  A material supply port 61 that opens to the diffusion channel 53 is provided in the upper wall 46. The material supply port 61 opens in the fourth surface 46 b of the upper wall 46. The material supply port 61 may be provided in the peripheral wall 47, for example.

  As shown in FIG. 4, the middle wall 48 is provided with a plurality of refrigerant supply ports 63 and a plurality of refrigerant discharge ports 64. The refrigerant supply port 63 is an example of a supply port. The refrigerant discharge port 64 is an example of a discharge port. Each of the plurality of refrigerant supply ports 63 and the plurality of refrigerant discharge ports 64 opens into the internal cavity 55.

  As shown in FIG. 2, each of the plurality of refrigerant supply ports 63 is provided in the vicinity of the center of the bottom wall 45 when the bottom wall 45 is viewed in plan (XY plane). The center of the bottom wall 45 is the center of gravity of the bottom wall 45, for example.

  Each of the plurality of refrigerant discharge ports 64 is provided at a position farther from the center of the bottom wall 45 than the refrigerant supply port 63. In other words, the distance between each refrigerant discharge port 64 and the periphery (peripheral wall 47) of the bottom wall 45 is shorter than the distance between each refrigerant supply port 63 and the periphery (peripheral wall 47) of the bottom wall 45. .

  The material supply device 22 in FIG. 1 supplies the gas G to the shower plate 35. The gas G is an example of a fluid, for example, a material of the film 13 that forms the wafer 11. As shown in FIG. 1, the material supply device 22 includes a tank 71, gas supply pipes 72 and 73, and a valve 74.

  The tank 71 stores the gas G. The tank 71 may contain, for example, the material of the film 13 and the carrier gas. The gas supply pipe 72 connects the tank 71 and the valve 74. The gas supply pipe 73 connects the valve 74 and the shower plate 35. In other words, the gas supply pipes 72 and 73 connect the tank 71 and the shower plate 35, and the valve 74 is interposed between the tank 71 and the shower plate 35.

  As shown in FIG. 3, the gas supply pipe 73 is connected to the upper wall 46 of the shower plate 35. The gas supply pipe 73 may be connected to another position. The gas supply pipe 73 supplies the gas G in the tank 71 from the material supply port 61 to the diffusion flow path 53 via the gas supply pipe 72 and the valve 74. The valve 74 changes the amount of gas G supplied to the diffusion channel 53.

  The gas G supplied to the diffusion flow path 53 flows out into the chamber 31 a through the plurality of openings 51 opening in the diffusion flow path 53. In other words, the material supply device 22 supplies the gas G to the chamber 31 a through the diffusion flow path 53 and the plurality of openings 51.

  1 is connected to the shower plate 35 by a plurality of supply pipes 24 and a plurality of discharge pipes 25, respectively. As shown in FIG. 4, the plurality of supply pipes 24 and the plurality of discharge pipes 25 respectively penetrate the upper wall 46 and are connected to the middle wall 48.

  The refrigerant supply port 63 is connected to the refrigerant supply device 23 via the supply pipe 24. The refrigerant supply device 23 supplies the refrigerant M from the refrigerant supply port 63 to the internal cavity 55 via the supply pipe 24. The refrigerant M is an example of a temperature medium, and is, for example, a liquid such as water or a gas such as carbon dioxide.

  The refrigerant discharge port 64 is connected to the refrigerant supply device 23 via the discharge pipe 25. The refrigerant supply device 23 collects the refrigerant M in the internal cavity 55 from the refrigerant discharge port 64 via the discharge pipe 25. In other words, the refrigerant M in the internal cavity 55 is discharged from the refrigerant discharge port 64.

  The refrigerant supply device 23 cools the temperature of the refrigerant M discharged from the refrigerant discharge port 64 to a predetermined temperature, and supplies it again to the internal cavity 55 from the refrigerant supply port 63. In other words, the refrigerant supply device 23 circulates the refrigerant M in the internal cavity 55.

  The semiconductor manufacturing apparatus 10 discharges the gas G toward the substrate 12 of the stage 32 as described below, for example. Note that the method by which the semiconductor manufacturing apparatus 10 discharges the gas G is not limited to the method described below.

  First, the semiconductor manufacturing apparatus 10 operates the vacuum pump 33 shown in FIG. The vacuum pump 33 sucks the gas in the chamber 31a and evacuates the chamber 31a. The outer wall 41 of the shower plate 35 has rigidity capable of suppressing deformation of the outer wall 41 even when the chamber 31a is in a vacuum state.

  Next, as shown in FIG. 4, the refrigerant supply device 23 supplies the refrigerant M to the internal cavity 55 via the supply pipe 24 and collects the refrigerant M in the internal cavity 55 via the discharge pipe 25. Thus, the refrigerant supply device 23 circulates the refrigerant M in the internal cavity 55.

  Next, as shown in FIG. 3, the material supply device 22 supplies the gas G to the diffusion channel 53 via the gas supply pipes 72 and 73 and the valve 74. The gas G is supplied from the diffusion channel 53 through the plurality of openings 51 to the chamber 31a.

  The temperature of the refrigerant M supplied to the internal cavity 55 by the refrigerant supply device 23 is lower than the temperature of the gas G passing through the opening 51. For this reason, a temperature difference arises in the part by the side of each inner peripheral surface 42c of the some cylindrical wall 42, and the part by the side of the outer peripheral surface 42d. In other words, a temperature difference occurs between the inside of the cylindrical wall 42 and the outside of the cylindrical wall 42. The temperature of the gas G is, for example, normal temperature (20 ° C. ± 15 ° C.). The temperature of the gas G is not limited to this.

  When at least the refrigerant M is supplied from the refrigerant supply port 63 to the internal cavity 55, the temperature of the refrigerant M is lower than the temperature of the gas G passing through the opening 51. In the present embodiment, even when the refrigerant M is discharged from the refrigerant discharge port 64, the temperature of the refrigerant M is lower than the temperature of the gas G passing through the opening 51. Outside the internal cavity 55, the temperature of the refrigerant M may be higher than the temperature of the gas G passing through the opening 51.

  Since the portion on the inner peripheral surface 42c side of the cylindrical wall 42 is in contact with the gas G, the temperature is higher than the portion on the outer peripheral surface 42d side. For this reason, the portion of the cylindrical wall 42 on the inner peripheral surface 42c side thermally expands more than the portion on the outer peripheral surface 42d side.

  In other words, since the portion on the outer peripheral surface 42d side of the cylindrical wall 42 is in contact with the refrigerant M, the temperature is lower than the portion on the inner peripheral surface 42c side. For this reason, the amount of thermal expansion of the portion on the outer peripheral surface 42d side of the cylindrical wall 42 is smaller than the amount of thermal expansion of the portion on the inner peripheral surface 42c side.

  FIG. 5 is a cross-sectional view showing the shower plate 35 in which the cylindrical wall 42 of the first embodiment is deformed along the line F3-F3 in FIG. As described above, a difference in thermal expansion occurs between the portion on the inner peripheral surface 42c side of the cylindrical wall 42 and the portion on the outer peripheral surface 42d side. For this reason, the cylindrical wall 42 is deformed so that the inner peripheral surface 42 c of the cylindrical wall 42 protrudes into the opening 51 formed by the cylindrical wall 42. By deforming the cylindrical wall 42 in this way, the diameter of the opening 51 is reduced (changed). In addition, the cylindrical wall 42 should just reduce the diameter of a part of opening 51 by a deformation | transformation.

  As shown in FIG. 5, in the following description, the plurality of cylinder walls 42 may be individually referred to as cylinder walls 42 </ b> A, 42 </ b> B, 42 </ b> C, 42 </ b> D. The cylindrical wall 42A is provided in the vicinity of the center of the bottom wall 45 when the bottom wall 45 is viewed in plan (XY plane). The cylindrical wall 42B is provided at a position farther from the center of the bottom wall 45 than the cylindrical wall 42A when the bottom wall 45 is viewed in plan. The cylindrical wall 42C is provided at a position farther from the center of the bottom wall 45 than the cylindrical wall 42B when the bottom wall 45 is viewed in plan. The cylinder wall 42D is provided at a position farther from the center of the bottom wall 45 than the cylinder wall 42C when the bottom wall 45 is viewed in plan.

  As shown in FIG. 4, the refrigerant supply port 63 is provided in the vicinity of the center of the bottom wall 45. On the other hand, the refrigerant discharge port 64 is provided at a position farther from the center of the bottom wall 45 than the refrigerant supply port 63. That is, in the internal cavity 55, the refrigerant M flows from the vicinity of the cylindrical wall 42A toward the vicinity of the cylindrical wall 42D.

  While flowing through the internal cavity 55, the refrigerant M receives heat from the gas G passing through the opening 51 inside the cylindrical wall 42 via the cylindrical wall 42. For this reason, the temperature of the refrigerant M in the vicinity of the cylindrical wall 42A is lower than the temperature of the refrigerant M in the vicinity of the cylindrical wall 42D. In other words, a temperature gradient is generated in the internal cavity 55 that increases as the distance from the center of the bottom wall 45 increases.

  The amount of deformation of the cylindrical wall 42 increases as the temperature difference between the gas G passing through the opening 51 inside the cylindrical wall 42 and the gas G near the cylindrical wall 42 increases. For this reason, the deformation amount of the cylindrical wall 42A is larger than the deformation amount of the cylindrical wall 42D. In other words, the diameter of the opening 51 of the deformed cylinder wall 42A is smaller than the diameter of the opening 51 of the deformed cylinder wall 42D. More specifically, the minimum diameter in the opening 51 of the deformed cylinder wall 42A is smaller than the minimum diameter in the opening 51 of the deformed cylinder wall 42D.

  Similarly, the deformation amount of the cylindrical wall 42B is smaller than the deformation amount of the cylindrical wall 42A and larger than the deformation amount of the cylindrical wall 42D. The deformation amount of the cylindrical wall 42C is smaller than the deformation amount of the cylindrical wall 42A, smaller than the deformation amount of the cylindrical wall 42B, and larger than the deformation amount of the cylindrical wall 42D. For this reason, the plurality of openings 51 become wider as the distance from the center of the bottom wall 45 increases.

  An example of the diameter of the opening 51 will be described. For example, the cylinder wall 42 is made of aluminum, the length of the cylinder wall 42 (dimension in the direction along the Z axis) is 40 mm, the thickness of the cylinder wall 42 is 0.5 mm, and the diameter of the opening 51 at room temperature. Is 1 mm. In this case, when the temperature difference between the gas G and the refrigerant M is 10 ° C., the minimum diameter of the opening 51 is about 0.8 mm. When the temperature difference between the gas G and the refrigerant M is 20 ° C., the minimum diameter of the opening 51 is about 0.7 mm. When the temperature difference between the gas G and the refrigerant M is 30 ° C., the minimum diameter of the opening 51 is about 0.6 mm. In addition, the change of the diameter of the opening 51 is not restricted to this.

  By deforming the plurality of cylindrical walls 42 as described above, the amount of gas G supplied to the chamber 31a through the opening 51 inside the cylindrical wall 42A is supplied to the chamber 31a through the opening 51 inside the cylindrical wall 42D. Less than the amount of gas G That is, the amounts of the respective gases G supplied from the plurality of openings 51 to the chamber 31a are different from each other. The amount of the gas G supplied from the opening 51 to the chamber 31a is smaller as the minimum diameter of the opening 51 is smaller.

  As shown in FIG. 1, the gas G supplied to the chamber 31a from the plurality of openings 51 is turned into plasma in the chamber 31a to generate plasma P. The plasma P is generated between the shower plate 35 and the substrate 12 supported by the stage 32.

  The film 13 is grown on the surface of the substrate 12 by plasma CVD for generating the plasma P as described above. The semiconductor manufacturing apparatus 10 manufactures a wafer 11 by forming a film 13 on a substrate 12.

  The above-described shower plate 35 is layered and formed by, for example, a three-dimensional printer. The shower plate 35 is made of, for example, a conductive material such as metal. The shower plate 35 may be made of other materials. As the material of the shower plate 35, a material having resistance to the fluid (gas G) supplied by the shower plate 35 is selected.

  For example, the three-dimensional printer forms the shower plate 35 by repeating the formation of the powdery material layer and the solidification of the material layer in the direction along the Z-axis. For this reason, the outer wall 41 and the plurality of cylindrical walls 42 of the shower plate 35 are integrally formed. According to such layered modeling, a hollow shower plate 35 provided with a plurality of openings 51, diffusion channels 53, and internal cavities 55 can be easily manufactured.

  The shower plate 35 may be formed by a method other than additive manufacturing. For example, the shower plate 35 may be formed by welding a plurality of cylindrical walls 42, a bottom wall 45, an upper wall 46, a peripheral wall 47, and an intermediate wall 48.

  In the semiconductor manufacturing apparatus 10 according to the first embodiment, the plurality of cylindrical walls 42 are respectively connected to the second surface 45b of the bottom wall 45 to form a plurality of openings 51 that open to the first surface 45a. The diameter of the opening 51 can be changed by deforming the cylindrical wall 42. In other words, the diameter of the opening 51 can be changed in the shower plate 35 by providing the internal cavity 55 inside the shower plate 35. When the diameter of the opening 51 is changed, the amount of the gas G supplied to the chamber 31a through the opening 51 changes. Therefore, the distribution of the gas G supplied from the plurality of openings 51 to the chamber 31a can be controlled by individually changing the diameters of the openings 51.

  A semiconductor manufacturing apparatus 10 that is an example of a processing apparatus in the present embodiment manufactures a wafer 11 that is a three-dimensional NAND flash memory. In such a wafer 11, the gate size and space width that determine the characteristics of the three-dimensional NAND flash memory depend on the thickness of the film 13.

  When the amount of the gas G supplied from each opening 51 to the chamber 31 a is the same, the thickness of the film 13 at the center of the substrate 12 may be larger than the thickness of the film 13 at the periphery of the substrate 12. The thickness of the film 13 is determined by the distribution of the gas G supplied from the plurality of openings 51 to the chamber 31a. For example, when the bottom wall 45 is viewed in plan, the amount of the gas G supplied from the opening 51 in the vicinity of the center of the bottom wall 45 is larger than the amount of the gas G supplied from the opening 51 far from the center of the bottom wall 45. By reducing the thickness, the thickness of the film 13 can be uniform.

  As described above, the semiconductor manufacturing apparatus 10 according to this embodiment controls the distribution of the gas G supplied from the plurality of openings 51 to the chamber 31a. Thereby, the thickness of the film 13 grown on the surface of the substrate 12 can be made uniform, and the deterioration of the characteristics of the wafer 11 can be suppressed.

  By individually deforming the cylindrical wall 42, the amount of gas G respectively supplied from the plurality of openings 51 to the chamber 31a is individually controlled. On the other hand, the valve 74 controls the amount of the gas G supplied to the diffusion channel 53, whereby the amount of the gas G supplied from the plurality of openings 51 to the chamber 31a is controlled as a whole.

  The thickness of the bottom wall 45 is thicker than the thickness of each of the plurality of cylindrical walls 42. Further, the plurality of cylindrical walls 42 connect the bottom wall 45 and the middle wall 48. In other words, the plurality of cylindrical walls 42 support the bottom wall 45 on the middle wall 48. For this reason, deformation of the bottom wall 45 due to deformation of the plurality of cylindrical walls 42 is suppressed. Therefore, the direction of the plurality of openings 51 is prevented from changing due to the deformation of the bottom wall 45.

  The outer wall 41 accommodates a plurality of cylindrical walls 42. The refrigerant supply device 23 supplies the refrigerant M to the internal cavity 55 provided between the plurality of cylindrical walls 42 inside the outer wall 41. Therefore, the temperature of the outer wall 41 and the gas G passing through the opening 51 can be controlled by the refrigerant M.

  A refrigerant supply port 63 connected to the refrigerant supply device 23 on the outer wall 41, and a refrigerant discharge port that opens to a position farther from the center of the bottom wall 45 than the refrigerant supply port 63 and discharges the refrigerant M inside the outer wall 41. 64 is provided. The temperature of the refrigerant M is lower than the temperature of the gas G. For this reason, the cylindrical wall 42 is deformed by a temperature difference between the gas G passing through the opening 51 and the refrigerant M supplied to the internal cavity 55, and the diameter of the opening 51 is reduced. The temperature difference between the gas G and the refrigerant M decreases from the position where the refrigerant supply port 63 is provided toward the position where the refrigerant discharge port 64 which is farther from the center of the bottom wall 45 than the refrigerant supply port 63 is provided. . For this reason, the deformation amount of the cylindrical wall 42 close to the refrigerant supply port 63 is larger than the deformation amount of the cylindrical wall 42 close to the refrigerant discharge port 64. Therefore, for example, the gas G supplied to the chamber 31a from the opening 51 of the cylindrical wall 42A near the center of the bottom wall 45 is the gas G supplied to the chamber 31a from the opening 51 of the cylindrical wall 42D far from the center of the bottom wall 45. Less than. Thereby, the thickness of the film 13 grown on the surface of the substrate 12 can be made uniform, and the deterioration of the characteristics of the wafer 11 can be suppressed.

  The plurality of cylindrical walls 42 may be deformed by receiving heat from a heat source other than the gas G and the refrigerant M. For example, the cylinder wall 42 may be heated by a heater attached to the shower plate 35. However, since the chamber 31 a is evacuated by the vacuum pump 33, the heat of the chamber 31 a is not easily transmitted to the cylindrical wall 42.

  Hereinafter, the second embodiment will be described with reference to FIG. In the following description of the plurality of embodiments, components having the same functions as the components already described are denoted by the same reference numerals as those described above, and further description may be omitted. . In addition, a plurality of components to which the same reference numerals are attached do not necessarily have the same functions and properties, and may have different functions and properties according to each embodiment.

  FIG. 6 is a cross-sectional view of the shower plate 35 according to the second embodiment as viewed from below. As shown in FIG. 6, the outer wall 41 of the second embodiment includes a first partition 81 and a second partition 82. Each of the first partition 81 and the second partition 82 is an example of a third wall.

  The first partition 81 is formed in a cylindrical shape extending in the direction along the Z axis and is disposed in the internal cavity 55. One end of the first partition 81 in the direction along the Z axis is connected to the second surface 45 b of the bottom wall 45. The other end of the first partition 81 is connected to the fifth surface 48 a of the middle wall 48.

  The first partition wall 81 surrounds the plurality of cylindrical walls 42A and 42B when the bottom wall 45 is viewed in plan (XY plane). In other words, the first partition wall 81 divides the internal cavity 55 into a portion provided with a plurality of cylindrical walls 42A and 42B and a portion provided with a plurality of cylindrical walls 42C and 42D. The first partition 81 is not limited to this, and may surround only the cylindrical wall 42A, or may surround the cylindrical walls 42A, 42B, and 42C, for example.

  The second partition wall 82 is formed in a cylindrical shape extending in the direction along the Z axis, and is disposed in the internal cavity 55. One end of the second partition wall 82 in the direction along the Z axis is connected to the second surface 45 b of the bottom wall 45. The other end of the second partition wall 82 is connected to the fifth surface 48 a of the middle wall 48.

  The second partition wall 82 surrounds the plurality of cylindrical walls 42A, 42B, and 42C and the first partition wall 81 when the bottom wall 45 is viewed in plan (XY plane). In other words, the second partition wall 82 divides the internal cavity 55 into a portion provided with a plurality of cylindrical walls 42A, 42B, and 42C and a portion provided with a plurality of cylindrical walls 42D. The second partition 82 is not limited to this, and may, for example, surround only the cylindrical wall 42A, or may surround the cylindrical walls 42A, 42B.

  A first chamber 85, a second chamber 86, and a third chamber 87 are formed in the internal cavity 55 by the first partition wall 81 and the second partition wall 82. The first room 85 is an example of a first room. The second room 86 is an example of a first room or a second room. The third room 87 is an example of a second room.

  The first chamber 85 is a portion surrounded by the first partition wall 81 of the internal cavity 55. Among the plurality of tube walls 42, a plurality of tube walls 42 </ b> A and 42 </ b> B are arranged in the first chamber 85.

  The second chamber 86 is a portion between the first partition 81 and the second partition 82 of the internal cavity 55. The second room 86 has a portion farther from the center of the bottom wall 45 than the first room 85 when the bottom wall 45 is viewed in plan (XY plane). A plurality of cylindrical walls 42 </ b> C among the plurality of cylindrical walls 42 are arranged in the second chamber 86.

  The third chamber 87 is a portion between the second partition wall 82 and the peripheral wall 47 of the internal cavity 55. The third room 87 has a portion farther from the center of the bottom wall 45 than the second room 86 when the bottom wall 45 is viewed in plan (XY plane). Among the plurality of tube walls 42, a plurality of tube walls 42 </ b> D are arranged in the third chamber 87.

  In the second embodiment, at least one refrigerant supply port 63 opens into the first to third chambers 85 to 87, respectively. Further, at least one refrigerant discharge port 64 opens into the first to third chambers 85 to 87, respectively. In each of the first to third chambers 85 to 87, the refrigerant discharge port 64 is provided at a position separated from the refrigerant supply port 63.

  The refrigerant supply port 63 provided in the first chamber 85 is an example of a first supply port. The refrigerant supply port 63 opens to the first chamber 85 and is connected to the refrigerant supply device 23 via the supply pipe 24. The refrigerant supply device 23 supplies the refrigerant M to the first chamber 85 from the refrigerant supply port 63 that opens to the first chamber 85.

  The refrigerant discharge port 64 provided in the first chamber 85 is an example of a first discharge port. The refrigerant discharge port 64 opens into the first chamber 85 and is connected to the refrigerant supply device 23 via the discharge pipe 25. The refrigerant M in the first chamber 85 is discharged from the refrigerant discharge port 64 opened to the first chamber 85 to the refrigerant supply device 23.

  The refrigerant supply port 63 provided in the second chamber 86 is an example of a first supply port or a second supply port. The refrigerant supply port 63 opens to the second chamber 86 and is connected to the refrigerant supply device 23 via the supply pipe 24. The refrigerant supply device 23 supplies the refrigerant M to the second chamber 86 from the refrigerant supply port 63 that opens to the second chamber 86.

  The refrigerant outlet 64 provided in the second chamber 86 is an example of a first outlet or a second outlet. The refrigerant discharge port 64 opens into the second chamber 86 and is connected to the refrigerant supply device 23 via the discharge pipe 25. The refrigerant M in the second chamber 86 is discharged from the refrigerant discharge port 64 opened to the second chamber 86 to the refrigerant supply device 23.

  The refrigerant supply port 63 provided in the third chamber 87 is an example of a second supply port. The refrigerant supply port 63 opens to the third chamber 87 and is connected to the refrigerant supply device 23 via the supply pipe 24. The refrigerant supply device 23 supplies the refrigerant M to the third chamber 87 from the refrigerant supply port 63 that opens to the third chamber 87.

  The refrigerant outlet 64 provided in the third chamber 87 is an example of a second outlet. The refrigerant discharge port 64 opens into the third chamber 87 and is connected to the refrigerant supply device 23 via the discharge pipe 25. The refrigerant M in the third chamber 87 is discharged from the refrigerant discharge port 64 opened to the third chamber 87 to the refrigerant supply device 23.

  The refrigerant supply device 23 supplies the refrigerants M having different temperatures to the first to third rooms 85 to 87, respectively. The semiconductor manufacturing apparatus 10 may include three refrigerant supply apparatuses 23 that supply the refrigerant M having different temperatures to the first to third chambers 85 to 87, respectively.

  The refrigerant supply device 23 supplies the first chamber 85 with the refrigerant M having a temperature lower than that of the gas G passing through the opening 51. The refrigerant M supplied to the first chamber 85 is an example of a first temperature medium.

  The refrigerant supply device 23 supplies the second chamber 86 with the refrigerant M having a temperature lower than that of the gas G passing through the opening 51 and higher than that of the refrigerant M supplied to the first chamber 85. The refrigerant M supplied to the second chamber 86 is an example of a first temperature medium or a second temperature medium.

  The refrigerant supply device 23 is supplied to the third chamber 87 at a temperature lower than that of the gas G passing through the opening 51, higher than that of the refrigerant M supplied to the first chamber 85 and supplied to the second chamber 86. The refrigerant M having a temperature higher than that of the refrigerant M to be supplied is supplied. The refrigerant M supplied to the third chamber 87 is an example of a second temperature medium.

  In the semiconductor manufacturing apparatus 10 described above, the gas G passes through the opening 51 and the refrigerant M is supplied to the first to third chambers 85 to 87 of the internal cavity 55. For this reason, each of the plurality of cylindrical walls 42 is deformed by a temperature difference between the portion on the inner peripheral surface 42c side and the portion on the outer peripheral surface 42d side.

  The temperature of the refrigerant M supplied to the first chamber 85 is lower than the temperature of the refrigerant M supplied to the second chamber 86 and lower than the temperature of the refrigerant M supplied to the third chamber 87. Therefore, the deformation amount of the plurality of cylindrical walls 42A and 42B arranged in the first chamber 85 is larger than the deformation amount of the plurality of cylindrical walls 42C arranged in the second chamber 86, and the third chamber. The amount of deformation of the plurality of cylindrical walls 42 </ b> D arranged at 87 is larger. Therefore, the diameters of the inner openings 51 of the deformed cylinder walls 42A and 42B are smaller than the diameters of the inner openings 51 of the deformed cylinder walls 42C and 42D.

  The temperature of the refrigerant M supplied to the second chamber 86 is lower than the temperature of the refrigerant M supplied to the third chamber 87. For this reason, the deformation amount of the plurality of cylindrical walls 42 </ b> C arranged in the second chamber 86 is larger than the deformation amount of the plurality of cylindrical walls 42 </ b> D arranged in the third chamber 87. Accordingly, the diameter of each inner opening 51 of the deformed cylindrical wall 42C is smaller than the diameter of each inner opening 51 of the deformed cylindrical wall 42D. As described above, the plurality of openings 51 become wider as the distance from the center of the bottom wall 45 increases.

  By deforming the plurality of cylindrical walls 42 as described above, the amount of the gas G supplied to the chamber 31a through the openings 51 inside the cylindrical walls 42A and 42B is transferred to the chamber 31a through the openings 51 inside the cylindrical wall 42D. Less than the amount of gas G supplied. That is, the amounts of the respective gases G supplied from the plurality of openings 51 to the chamber 31a are different from each other.

  In the semiconductor manufacturing apparatus 10 of the second embodiment, for example, the first partition 81 includes a first chamber 85 in the internal cavity 55 and a portion farther from the center of the bottom wall 45 than the first chamber 85. 2 chambers 86 are formed. The refrigerant M supplied to the second chamber 86 has a higher temperature than the refrigerant M supplied to the first chamber 85. For this reason, the deformation amount of the cylindrical wall 42 of the first chamber 85 is larger than the deformation amount of the cylindrical wall 42 of the second chamber 86. Therefore, the gas G supplied to the chamber 31a from the opening 51 of the cylindrical wall 42A near the center of the bottom wall 45 is more than the gas G supplied to the chamber 31a from the opening 51 of the cylindrical wall 42C farther from the center of the bottom wall 45. Less. Thereby, the thickness of the film 13 grown on the surface of the substrate 12 can be made uniform, and the deterioration of the characteristics of the wafer 11 can be suppressed.

  Below, 3rd Embodiment is described with reference to FIG. FIG. 7 is a cross-sectional view of the shower plate 35 according to the third embodiment as viewed from below. As shown in FIG. 7, the outer wall 41 of the third embodiment has a first partition 81 and a second partition 82 as in the second embodiment. As a result, first to third chambers 85 to 87 are formed in the internal cavity 55.

  On the other hand, in the third embodiment, the plurality of refrigerant supply ports 63 open to the first chamber 85. In the present embodiment, the first room 85 is an example of a first room. Note that the refrigerant supply port 63 may be further opened in the second chamber 86, for example.

  The refrigerant supply port 63 is connected to the refrigerant supply device 23 via the supply pipe 24. The refrigerant supply device 23 supplies the refrigerant M to the first chamber 85 from the refrigerant supply port 63 that opens to the first chamber 85.

  In the third embodiment, the plurality of refrigerant discharge ports 64 open to the third chamber 87. In the present embodiment, the third room 87 is an example of a second room. The refrigerant discharge port 64 may be further opened in the second chamber 86, for example.

  The refrigerant discharge port 64 is connected to the refrigerant supply device 23 via the discharge pipe 25. The refrigerant M in the third chamber 87 is discharged from the refrigerant discharge port 64 opened to the third chamber 87 to the refrigerant supply device 23.

  A plurality of first communication holes 91 are provided in the first partition wall 81. The first communication hole 91 connects the first room 85 and the second room 86. The cross-sectional area of each of the plurality of first communication holes 91 is narrower than the cross-sectional area of the first chamber 85 and narrower than the cross-sectional area of the second chamber 86.

  A plurality of second communication holes 92 are provided in the second partition wall 82. The second communication hole 92 connects the second room 86 and the third room 87. The cross-sectional area of each of the plurality of second communication holes 92 is narrower than the cross-sectional area of the second chamber 86 and narrower than the cross-sectional area of the third chamber 87.

  The first room 85 and the third room 87 are connected by the first and second communication holes 91 and 92 and the second room 86. That is, the first room 85 is connected to the third room 87 via the plurality of first communication holes 91, the second room 86, and the plurality of second communication holes 92. The first and second communication holes 91 and 92 and the second chamber 86 are examples of flow paths.

  In the semiconductor manufacturing apparatus 10 described above, the gas G passes through the opening 51 and the refrigerant M is supplied to the first to third chambers 85 to 87 of the internal cavity 55. First, the refrigerant M is supplied from the refrigerant supply port 63 to the first chamber 85. In the first chamber 85, the refrigerant M receives heat from the gas G passing through the openings 51 inside the cylindrical walls 42A and 42B via the cylindrical walls 42A and 42B.

  The refrigerant M in the first chamber 85 is supplied to the second chamber 86 through the first communication hole 91. In the second chamber 86, the refrigerant M receives heat from the gas G passing through the opening 51 inside the cylindrical wall 42C via the cylindrical wall 42C.

  The refrigerant M in the second chamber 86 is supplied to the third chamber 87 through the second communication hole 92. In the third chamber 87, the refrigerant M receives heat from the gas G passing through the opening 51 inside the cylindrical wall 42D via the cylindrical wall 42D. The refrigerant M in the third chamber 87 is discharged from the refrigerant discharge port 64.

  As described above, the refrigerant M receives heat from the cylindrical walls 42 </ b> A and 42 </ b> B in the first chamber 85 and then receives heat from the cylindrical wall 42 </ b> C in the second chamber 86. The refrigerant M that has received heat from the cylindrical wall 42 </ b> C of the second chamber 86 receives heat from the cylindrical wall 42 </ b> D in the third chamber 87. For this reason, the temperature of the refrigerant M in the first chamber 85 is lower than the temperature of the refrigerant M in the second chamber 86 and lower than the temperature of the refrigerant M in the third chamber 87. The temperature of the refrigerant M in the second chamber 86 is lower than the temperature of the refrigerant M in the third chamber 87. The flow of the refrigerant M in the internal cavity 55 is not limited to this. The temperature of the refrigerant M in each of the first to third chambers 85 to 87 is lower than the temperature of the gas G passing through the opening 51. Thus, the temperature of the refrigerant | coolant M in each of the 1st thru | or 3rd chambers 85-87 differs. For this reason, the deformation amount of each of the cylindrical walls 42A and 42B is larger than the deformation amount of the cylindrical wall 42C. Further, the deformation amount of the cylindrical wall 42C is larger than the deformation amount of the cylindrical wall 42D.

  The diameter of the opening 51 of the deformed cylinder walls 42A and 42B is smaller than the diameter of the opening 51 of the deformed cylinder wall 42C. The diameter of the opening 51 of the deformed cylinder wall 42C is smaller than the diameter of the opening 51 of the deformed cylinder wall 42D. That is, the plurality of openings 51 become wider as the distance from the center of the bottom wall 45 increases.

  By deforming the plurality of cylindrical walls 42 as described above, the amount of gas G supplied to the chamber 31a through the opening 51 inside the cylindrical wall 42A is supplied to the chamber 31a through the opening 51 inside the cylindrical wall 42D. Less than the amount of gas G That is, the amounts of the respective gases G supplied from the plurality of openings 51 to the chamber 31a are different from each other.

  In the semiconductor manufacturing apparatus 10 of the third embodiment, the first and second partition walls 81 and 82 include the first chamber 85 in which the refrigerant M is supplied from the refrigerant supply port 63 to the internal cavity 55, and the first A third room 87 having a portion farther from the center of the bottom wall 45 than the room 85 and from which the refrigerant M is discharged from the refrigerant discharge port 64 is formed. The first room 85 and the third room 87 are connected by the first and second communication holes 91 and 92 and the second room 86. The refrigerant M is heated in the first chamber 85 and then supplied to the third chamber 87 through the first and second communication holes 91 and 92 and the second chamber 86. That is, the temperature of the refrigerant M in the first chamber 85 is lower than the temperature of the refrigerant M in the third chamber 87. For this reason, the deformation amount of the cylindrical wall 42 </ b> A of the first chamber 85 is larger than the deformation amount of the cylindrical wall 42 </ b> D of the third chamber 87. Therefore, the gas G supplied to the chamber 31a from the opening 51 of the cylindrical wall 42A near the center of the bottom wall 45 is more than the gas G supplied to the chamber 31a from the opening 51 of the cylindrical wall 42D farther from the center of the bottom wall 45. Less. Thereby, the thickness of the film 13 grown on the surface of the substrate 12 can be made uniform, and the deterioration of the characteristics of the wafer 11 can be suppressed.

  The fourth embodiment will be described below with reference to FIGS. 8 and 9. FIG. 8 is a cross-sectional view schematically showing a semiconductor manufacturing apparatus 10 according to the fourth embodiment. As shown in FIG. 8, the semiconductor manufacturing apparatus 10 of the fourth embodiment includes a pressure pump 101 and a plurality of connection pipes 102 instead of the refrigerant supply apparatus 23, the supply pipe 24, and the discharge pipe 25. The pressure pump 101 is an example of a pressure adjustment unit.

  FIG. 9 is a cross-sectional view of the shower plate 35 of the fourth embodiment as viewed from below. As shown in FIG. 9, the outer wall 41 of the fourth embodiment has a first partition 81 and a second partition 82 as in the second embodiment. As a result, first to third chambers 85 to 87 are formed in the internal cavity 55.

  Instead of the refrigerant supply port 63 and the refrigerant discharge port 64, a plurality of connection ports 104 are provided on the middle wall 48 of the fourth embodiment. The plurality of connection ports 104 open to the first to third rooms 85 to 87, respectively.

  Each of the plurality of connection ports 104 is connected to the pressure pump 101 via the connection pipe 102. The pressure pump 101 supplies or sucks a pressure medium such as air from the connection port 104 to each of the first to third chambers 85 to 87 via the connection pipe 102. The pressure medium may be another fluid.

  The pressure pump 101 increases the pressure in each of the first to third chambers 85 to 87 by supplying a pressure medium to each of the first to third chambers 85 to 87. On the other hand, the pressure pump 101 reduces the pressure of each of the first to third chambers 85 to 87 by sucking the pressure medium from each of the first to third chambers 85 to 87. That is, the pressure pump 101 changes the pressure in each of the first to third chambers 85 to 87 of the internal cavity 55.

  When the gas G passes through the opening 51, when the pressure in the first chamber 85 is higher than the pressure inside the respective openings 51 of the cylindrical walls 42A and 42B, the cylindrical walls 42A and 42B are respectively the cylindrical walls 42A and 42B. It deform | transforms so that it may protrude inside the opening 51 of this. By deforming the cylindrical wall 42 in this way, the diameter of the opening 51 is reduced (changed). That is, the cylindrical wall 42 of the fourth embodiment is deformed by a pressure difference between the inside of the opening 51 and the internal cavity 55.

  Similarly, when the pressure in the second chamber 86 is higher than the pressure inside each opening 51 of the cylindrical wall 42C, the cylindrical wall 42C is deformed so as to protrude into the opening 51 of the cylindrical wall 42C. . When the pressure in the third chamber 87 is higher than the pressure inside each opening 51 of the cylinder wall 42D, each cylinder wall 42D is deformed so as to protrude into the opening 51 of the cylinder wall 42D.

  In the semiconductor manufacturing apparatus 10 described above, the gas G passes through the opening 51 and a pressure medium is supplied to the first to third chambers 85 to 87 of the internal cavity 55. For this reason, each of the plurality of cylindrical walls 42 is deformed by a pressure difference between the inside of the opening 51 and the internal cavity 55.

  The pressure pump 101 makes the pressure in the first chamber 85 higher than the pressure in the second chamber 86 and higher than the pressure in the third chamber 87. Thereby, the deformation amount of the plurality of cylindrical walls 42A and 42B arranged in the first chamber 85 is larger than the deformation amount of the plurality of cylindrical walls 42C arranged in the second chamber 86, and the third chamber. The amount of deformation of the plurality of cylindrical walls 42 </ b> D arranged at 87 is larger. Therefore, the diameters of the inner openings 51 of the deformed cylinder walls 42A and 42B are smaller than the diameters of the inner openings 51 of the deformed cylinder walls 42C and 42D.

  The pressure pump 101 makes the pressure in the second chamber 86 higher than the pressure in the third chamber 87. For this reason, the deformation amount of the plurality of cylindrical walls 42 </ b> C arranged in the second chamber 86 is larger than the deformation amount of the plurality of cylindrical walls 42 </ b> D arranged in the third chamber 87. Accordingly, the diameter of each inner opening 51 of the deformed cylindrical wall 42C is smaller than the diameter of each inner opening 51 of the deformed cylindrical wall 42D.

  As described above, the pressure pump 101 makes the pressures in the first to third chambers 85 to 87 different from each other, and individually controls the deformation amounts of the plurality of cylindrical walls 42A, 42B, 42C, and 42D. The plurality of openings 51 become wider as the distance from the center of the bottom wall 45 increases. Note that the pressure pump 101 may, for example, make the pressures in the first to third chambers 85 to 87 substantially the same depending on conditions, and the pressure in the third chamber 87 may be set to the first chamber 85. It may be higher than the pressure.

  By deforming the plurality of cylindrical walls 42 as described above, the amount of the gas G supplied to the chamber 31a through the openings 51 inside the cylindrical walls 42A and 42B is transferred to the chamber 31a through the openings 51 inside the cylindrical wall 42D. Less than the amount of gas G supplied. That is, the amounts of the respective gases G supplied from the plurality of openings 51 to the chamber 31a are different from each other.

  In the semiconductor manufacturing apparatus 10 of the fourth embodiment, the pressure pump 101 changes the pressure of the internal cavity 55. For example, when the pressure in the internal cavity 55 is made higher than the pressure in the opening 51, the cylindrical wall 42 is deformed and the diameter of the opening 51 is reduced. The first and second partition walls 81 and 82 include, for example, a first chamber 85 and a second chamber 86 having a portion farther from the center of the bottom wall 45 than the first chamber 85 in the internal cavity 55. Form. The pressure pump 101 makes the pressure in the first chamber 85 and the pressure in the second chamber 86 different from each other. For example, when the pressure pump 101 makes the pressure in the first chamber 85 higher than the pressure in the second chamber 86, the deformation amount of the cylindrical walls 42 </ b> A and 42 </ b> B in the first chamber 85 can be reduced in the second chamber 86. It becomes larger than the deformation amount of the cylindrical wall 42C. Therefore, the gas G supplied to the chamber 31a from the opening 51 of the cylindrical walls 42A and 42B close to the center of the bottom wall 45 is the gas supplied to the chamber 31a from the opening 51 of the cylindrical wall 42C farther from the center of the bottom wall 45. Less than G. Thereby, the thickness of the film 13 grown on the surface of the substrate 12 can be made uniform, and the deterioration of the characteristics of the wafer 11 can be suppressed.

  The fifth embodiment will be described below with reference to FIG. The semiconductor manufacturing apparatus 10 of the fifth embodiment includes a pressure pump 101 and a connecting pipe 102 as in the fourth embodiment. As in the fourth embodiment, the connection port 104 is provided in the middle wall 48 of the fifth embodiment.

  FIG. 10 is a cross-sectional view of the shower plate 35 according to the fifth embodiment as viewed from below. As shown in FIG. 10, as in the third embodiment, the first partition 81 is provided with a plurality of first communication holes 91, and the second partition 82 is provided with a plurality of second communication holes 92. . That is, the first room 85 and the third room 87 are connected by the first and second communication holes 91 and 92 and the second room 86.

  The connection port 104 opens into the first room 85. In the present embodiment, the first room 85 is an example of a first room. Note that the connection port 104 may open to the second room 86 or the third room 87, for example.

  In the semiconductor manufacturing apparatus 10 described above, the gas G passes through the opening 51 and a pressure medium is supplied to the first to third chambers 85 to 87 of the internal cavity 55. For this reason, each of the plurality of cylindrical walls 42 is deformed by a pressure difference between the inside of the opening 51 and the internal cavity 55.

  The pressure pump 101 supplies a pressure medium to the first chamber 85. As a result, the pressure in the first chamber 85 increases. The pressure medium in the first chamber 85 passes through the first communication hole 91 and is supplied to the second chamber 86. As a result, the pressure in the second chamber 86 increases. The pressure increase in the second chamber 86 is slower than the pressure increase in the first chamber 85.

  The pressure medium in the second chamber 86 is supplied to the third chamber 87 through the second communication hole 92. As a result, the pressure in the third chamber 87 increases. The pressure increase in the third chamber 87 is slower than the pressure increase in the first chamber 85 and slower than the pressure increase in the second chamber 86.

  The pressures in the first to third chambers 85 to 87 may be the same over time. However, the pressure in the second chamber 86 is lower than the pressure in the first chamber 85 before the pressure in the second chamber 86 becomes equal to the pressure in the first chamber 85. Further, before the pressure in the third chamber 87 becomes the same as the pressure in the second chamber 86, the pressure in the third chamber 87 is lower than the pressure in the first chamber 85 and the second chamber 86. Lower than the pressure.

  As described above, when the pressure pump 101 supplies the pressure medium to the first chamber 85, a difference occurs in the pressures in the first to third chambers 85 to 87. Therefore, the deformation amount of the plurality of cylindrical walls 42A and 42B arranged in the first chamber 85 is larger than the deformation amount of the plurality of cylindrical walls 42C arranged in the second chamber 86, and the third chamber. The amount of deformation of the plurality of cylindrical walls 42 </ b> D arranged at 87 is larger. Therefore, the diameters of the inner openings 51 of the deformed cylinder walls 42A and 42B are smaller than the diameters of the inner openings 51 of the deformed cylinder walls 42C and 42D.

  Further, the deformation amount of the plurality of cylindrical walls 42 </ b> C arranged in the second chamber 86 is larger than the deformation amount of the plurality of cylindrical walls 42 </ b> D arranged in the third chamber 87. Accordingly, the diameter of each inner opening 51 of the deformed cylindrical wall 42C is smaller than the diameter of each inner opening 51 of the deformed cylindrical wall 42D.

  As described above, the pressure pump 101 individually controls the deformation amounts of the plurality of cylindrical walls 42A, 42B, 42C, and 42D by changing the pressure in the first chamber 85. The plurality of openings 51 become wider as the distance from the center of the bottom wall 45 increases. For example, the pressure pump 101 may lower the pressure in the first chamber 85 than the pressure in the third chamber 87 according to conditions.

  By deforming the plurality of cylindrical walls 42 as described above, the amount of the gas G supplied to the chamber 31a through the openings 51 inside the cylindrical walls 42A and 42B is transferred to the chamber 31a through the openings 51 inside the cylindrical wall 42D. Less than the amount of gas G supplied. That is, the amounts of the respective gases G supplied from the plurality of openings 51 to the chamber 31a are different from each other.

  In the semiconductor control device 10 of the fifth embodiment, for example, the first partition 81 has a first chamber 85 and a portion farther from the center of the bottom wall 45 than the first chamber 85 in the internal cavity 55. A second chamber 86 is formed. The pressure pump 101 changes the pressure of the first chamber 85 connected to the second chamber 86 by the first communication hole 91. By providing the first communication hole 91, the pressure in the second chamber 86 changes according to the pressure in the first chamber 85, but the change in pressure in the second chamber 86 changes in the first chamber 85. Slower than the pressure change. For example, when the pressure pump 101 increases the pressure in the first chamber 85, the pressure in the second chamber 86 increases later than the pressure increase in the first chamber 85. That is, since the difference between the pressure in the first chamber 85 and the pressure in the second chamber 86 is generated, the deformation amount of the cylindrical walls 42A and 42B in the first chamber 85 is the same as that in the cylindrical wall 42C in the second chamber 86. It becomes larger than the amount of deformation. Therefore, the gas G supplied to the chamber 31a from the opening 51 of the cylindrical walls 42A and 42B close to the center of the bottom wall 45 is the gas supplied to the chamber 31a from the opening 51 of the cylindrical wall 42C farther from the center of the bottom wall 45. Less than G. Thereby, the thickness of the film 13 grown on the surface of the substrate 12 can be made uniform, and the deterioration of the characteristics of the wafer 11 can be suppressed.

  The sixth embodiment will be described below with reference to FIG. FIG. 11 is a cross-sectional view showing the shower plate 35 in which the cylindrical wall 42 according to the sixth embodiment is deformed. As shown in FIG. 11, the outer wall 41 of the sixth embodiment does not include the first and second partition walls 81 and 82, but may include the first and second partition walls 81 and 82.

  In the sixth embodiment, the thickness of the cylindrical wall 42A is thinner than the thickness of each of the multiple cylindrical walls 42B. Furthermore, the coefficient of thermal expansion of the cylindrical wall 42A is higher than the coefficient of thermal expansion of each of the plurality of cylindrical walls 42B. In this description, the cylinder wall 42A is an example of a first cylinder wall, and the cylinder wall 42B is an example of a second cylinder wall.

  Each thickness of the plurality of cylindrical walls 42B is thinner than each thickness of the plurality of cylindrical walls 42C. Furthermore, the thermal expansion coefficient of each of the plurality of cylindrical walls 42B is higher than the thermal expansion coefficient of each of the plurality of cylindrical walls 42C. In this description, the cylinder wall 42B is an example of a first cylinder wall, and the cylinder wall 42C is an example of a second cylinder wall.

  Each thickness of the plurality of cylindrical walls 42C is thinner than each thickness of the plurality of cylindrical walls 42D. Furthermore, the coefficient of thermal expansion of each of the plurality of cylindrical walls 42C is higher than the coefficient of thermal expansion of each of the plurality of cylindrical walls 42D. In this description, the cylinder wall 42C is an example of a first cylinder wall, and the cylinder wall 42D is an example of a second cylinder wall.

  As described above, the plurality of cylindrical walls 42A, 42B, 42C, and 42D have different thicknesses. Note that at least two of the plurality of cylindrical walls 42A, 42B, 42C, and 42D may have the same thickness. Further, the plurality of cylindrical walls 42A, 42B, 42C, 42D have different thermal expansion coefficients. In other words, the plurality of cylindrical walls 42A, 42B, 42C, 42D are made of different materials. Note that at least two of the plurality of cylindrical walls 42A, 42B, 42C, and 42D may have the same coefficient of thermal expansion.

  In the semiconductor manufacturing apparatus 10 described above, the gas G passes through the opening 51 and the refrigerant M is supplied to the internal cavity 55. For this reason, each of the plurality of cylindrical walls 42 is deformed by a temperature difference between the portion on the inner peripheral surface 42c side and the portion on the outer peripheral surface 42d side.

  When the temperature difference between the portion on the inner peripheral surface 42c side and the portion on the outer peripheral surface 42d side is constant, the amount of deformation of the cylindrical wall 42 increases as the thickness of the cylindrical wall 42 decreases. Furthermore, when the temperature difference between the portion on the inner peripheral surface 42c side and the portion on the outer peripheral surface 42d side is constant, the amount of deformation of the cylindrical wall 42 increases as the coefficient of thermal expansion of the cylindrical wall 42 decreases.

  The thickness of the cylinder wall 42A is thinner than the thickness of each of the plurality of cylinder walls 42B, 42C, 42D. Furthermore, the thermal expansion coefficient of the cylindrical wall 42A is higher than the thermal expansion coefficient of each of the multiple cylindrical walls 42B, 42C, and 42D. For this reason, the deformation amount of the cylinder wall 42A is larger than the deformation amounts of the plurality of cylinder walls 42B, 42C, and 42D. Therefore, the diameter of the opening 51 inside the deformed cylinder wall 42A is smaller than the diameter of the opening 51 inside each of the deformed cylinder walls 42B, 42C, 42D.

  Similarly, the thickness of each of the plurality of cylindrical walls 42B is thinner than the thickness of each of the plurality of cylindrical walls 42C and 42D. Furthermore, the coefficient of thermal expansion of each of the plurality of cylindrical walls 42B is higher than the coefficient of thermal expansion of each of the plurality of cylindrical walls 42C and 42D. For this reason, each deformation amount of the plurality of cylindrical walls 42B is larger than each deformation amount of the plurality of cylindrical walls 42C and 42D. Accordingly, the diameter of the opening 51 inside the deformed cylinder wall 42B is smaller than the diameter of the opening 51 inside each of the deformed cylinder walls 42C and 42D.

  Each thickness of the plurality of cylindrical walls 42C is thinner than each thickness of the plurality of cylindrical walls 42D. Furthermore, the coefficient of thermal expansion of each of the plurality of cylindrical walls 42C is higher than the coefficient of thermal expansion of each of the plurality of cylindrical walls 42D. For this reason, each deformation amount of the plurality of cylindrical walls 42C is larger than each deformation amount of the plurality of cylindrical walls 42D. Therefore, the diameter of the opening 51 inside the deformed cylindrical wall 42C is smaller than the diameter of each opening 51 inside the deformed cylindrical wall 42D. As described above, the plurality of openings 51 become wider as the distance from the center of the bottom wall 45 increases.

  By deforming the plurality of cylindrical walls 42 as described above, the amount of gas G supplied to the chamber 31a through the opening 51 inside the cylindrical wall 42A is supplied to the chamber 31a through the opening 51 inside the cylindrical wall 42D. Less than the amount of gas G That is, the amounts of the respective gases G supplied from the plurality of openings 51 to the chamber 31a are different from each other.

  In the semiconductor manufacturing apparatus 10 of the sixth embodiment, the cylindrical wall 42 is deformed due to a temperature difference between the gas G passing through the opening 51 and the refrigerant M in the internal cavity 55, thereby reducing the diameter of the opening 51. When the temperature difference between the gas G and the refrigerant M is constant, the amount of deformation of the cylindrical wall 42 increases as the thickness of the cylindrical wall 42 decreases. The thickness of the cylinder wall 42A is thinner than the thickness of the cylinder wall 42B. Therefore, for example, when the cylindrical wall 42A and the cylindrical wall 42B are heated to substantially the same temperature, the gas G supplied to the chamber 31a from the opening 51 of the cylindrical wall 42A near the center of the bottom wall 45 This is less than the gas G supplied to the chamber 31a from the opening 51 of the cylindrical wall 42B farther from the center. Thereby, the thickness of the film 13 grown on the surface of the substrate 12 can be made uniform, and the deterioration of the characteristics of the wafer 11 can be suppressed.

  The cylindrical wall 42 is deformed by a temperature difference between the gas G passing through the opening 51 and the refrigerant M in the internal cavity 55, and the diameter of the opening 51 is reduced. When the temperature difference between the gas G and the refrigerant M is constant, the amount of deformation of the cylindrical wall 42 increases as the coefficient of thermal expansion of the cylindrical wall 42 increases. The thermal expansion coefficient of the cylindrical wall 42A is higher than the thermal expansion coefficient of the cylindrical wall 42B. Therefore, for example, when the cylindrical wall 42A and the cylindrical wall 42B are heated to substantially the same temperature, the gas G supplied to the chamber 31a from the opening 51 of the cylindrical wall 42A near the center of the bottom wall 45 This is less than the gas G supplied to the chamber 31a from the opening 51 of the cylindrical wall 42B farther from the center. Thereby, the thickness of the film 13 grown on the surface of the substrate 12 can be made uniform, and the deterioration of the characteristics of the wafer 11 can be suppressed.

  The seventh embodiment will be described below with reference to FIG. FIG. 12 is a cross-sectional view showing a part of the shower plate 35 according to the seventh embodiment. As shown in FIG. 12, the plurality of cylindrical walls 42 are each formed of a first piezoelectric body 111, a second piezoelectric body 112, and two electrodes 113. The first and second piezoelectric bodies 111 and 112 are examples of piezoelectric bodies, and may be referred to as piezoelectric elements, for example.

  The first and second piezoelectric bodies 111 and 112 are each formed in a cylindrical shape extending in the direction along the Z axis. Note that the first and second piezoelectric bodies 111 and 112 may be formed in other shapes.

  One end of the first piezoelectric body 111 is connected to the second surface 45 b of the bottom wall 45. The other end of the first piezoelectric body 111 is connected to one end of the second piezoelectric body 112. The other end of the second piezoelectric body 112 is connected to the fifth surface 48 a of the middle wall 48.

  The two electrodes 113 cover the inner peripheral surface 42 c and the outer peripheral surface 42 d of the cylindrical wall 42 formed by the first and second piezoelectric bodies 111 and 112. The semiconductor manufacturing apparatus 10 individually applies a voltage to each electrode 113 of the plurality of cylindrical walls 42.

  When a potential difference is generated between the electrode 113 covering the inner peripheral surface 42c and the electrode 113 covering the outer peripheral surface 42d, the cylindrical wall 42 formed by the first and second piezoelectric bodies 111 and 112 becomes the cylindrical wall 42. It deform | transforms so that it may protrude into the inside of the opening 51 which forms. By deforming the cylindrical wall 42 in this way, the diameter of the opening 51 is reduced (changed). In FIG. 12, the cylindrical wall 42 in which a potential difference is generated between the electrodes 113 is indicated by a solid line, and the cylindrical wall 42 having the same potential between the electrodes 113 is indicated by a two-dot chain line.

  In the semiconductor manufacturing apparatus 10 of the seventh embodiment, the cylindrical wall 42 is formed by the first and second piezoelectric bodies 111 and 112. Thereby, the diameter of the some opening 51 can be changed more correctly by applying a voltage to the electrode 113 of each cylindrical wall 42. Therefore, the distribution of the gas G supplied from the opening 51 to the chamber 31a can be controlled more accurately.

  As shown in the plurality of embodiments described above, the plurality of cylindrical walls 42 are deformed by a temperature difference, a pressure difference, a thickness difference, a thermal expansion coefficient difference, or a deformation of the piezoelectric body. In the cylindrical wall 42 of one embodiment, these multiple deformation principles may be combined with each other.

  Furthermore, all the openings 51 through which the gas G passes may not be formed by the deformable cylindrical wall 42. For example, at least one of the plurality of openings 51 through which the gas G passes may be formed by a wall that is thicker than the bottom wall 45 and harder to deform than the bottom wall 45.

  Furthermore, in the above-described embodiments, the plurality of openings 51 become wider as the distance from the center of the bottom wall 45 increases as the plurality of cylindrical walls 42 are deformed. However, as the plurality of cylindrical walls 42 are deformed, the plurality of openings 51 may become narrower as the distance from the center of the bottom wall 45 increases, or may partially narrow.

  According to at least one embodiment described above, the diameter of the opening can be deformed by deforming the second wall. When the diameter of the opening is changed, the amount of fluid supplied to the processing chamber through the opening changes. Therefore, the distribution of the fluid supplied from the opening to the processing chamber can be controlled by individually changing the diameter of the opening.

Although several embodiments of the present invention have been described, these embodiments are presented by way of example and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the spirit of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.
The contents of the claims at the beginning of the application are added below.
[1]
A first wall having a first surface and a second surface located opposite the first surface;
A plurality of second holes connected to the second surface at positions spaced apart from each other, forming a plurality of openings opening in the first surface, and changing the diameter of the opening by deforming each of the plurality of openings. With walls,
A flow rate adjusting device.
[2]
The flow regulating device according to [1], wherein the thickness of the first wall is thicker than the thickness of each of the plurality of second walls.
[3]
An outer wall having the first wall and accommodating the plurality of second walls;
A medium supply unit for supplying a temperature medium between the plurality of second walls inside the outer wall;
The flow rate adjusting device according to [1] or [2], further comprising:
[4]
A supply port that opens into the outer wall and is connected to the medium supply unit, and that opens to the inside of the outer wall at a position farther from the center of the first wall than the supply port. And a discharge port through which the temperature medium is discharged.
The temperature of the temperature medium is lower than the temperature of the fluid;
[3] The flow control device.
[5]
The outer wall includes, in the outer wall, a first room in which at least one of the plurality of second walls is disposed, and a portion farther from the center of the first wall than the first room. And a third wall that forms a second chamber in which at least one of the plurality of second walls is disposed, and is open to the first chamber and connected to the medium supply unit A first supply port; a first discharge port that opens to the first chamber and discharges the temperature medium of the first chamber; and opens to the second chamber to the medium supply unit. A connected second supply port, and a second discharge port that opens into the second chamber and discharges the temperature medium in the second chamber,
The temperature medium is supplied to the first chamber and has a temperature lower than that of the fluid, and the temperature medium is supplied to the second chamber and has a temperature lower than that of the fluid. A second temperature medium having a temperature higher than that of the temperature medium.
[3] The flow control device.
[6]
The outer wall includes, in the outer wall, a first room in which at least one of the plurality of second walls is disposed, and a portion farther from the center of the first wall than the first room. And a third wall that forms a second chamber in which at least one of the plurality of second walls is disposed, and is open to the first chamber and connected to the medium supply unit A supply port, and a discharge port that opens into the second chamber and discharges the temperature medium of the second chamber are provided,
A flow path connecting the first room and the second room is provided in the third wall,
The temperature of the temperature medium is lower than the temperature of the fluid;
[3] The flow control device.
[7]
An outer wall having the first wall and accommodating the plurality of second walls;
A pressure adjusting unit that changes the pressure between the plurality of second walls inside the outer wall;
Further comprising
The outer wall includes, in the outer wall, a first room in which at least one of the plurality of second walls is disposed, and a portion farther from the center of the first wall than the first room. And a third wall that forms a second chamber in which at least one of the plurality of second walls is disposed,
The pressure adjusting unit makes the pressure in the first chamber different from the pressure in the second chamber;
[1] or [2] flow control device.
[8]
An outer wall having the first wall and accommodating the plurality of second walls;
A pressure adjusting unit that changes the pressure between the plurality of second walls inside the outer wall;
Further comprising
The outer wall includes, in the outer wall, a first room in which at least one of the plurality of second walls is disposed, and a portion farther from the center of the first wall than the first room. And a third wall that forms a second chamber in which at least one of the plurality of second walls is disposed,
A flow path connecting the first room and the second room is provided in the third wall,
The pressure adjusting unit changes the pressure of the first chamber;
[3] The flow control device.
[9]
The plurality of second walls are connected to the second surface, form the opening that opens in the first surface, and are deformed to change a diameter of the opening; The opening is connected to the second surface at a position farther from the center of the first wall than the first cylindrical wall, and the opening is formed in the first surface. A second cylindrical wall whose diameter can be changed,
The thickness of the first tube wall is thinner than the thickness of the second tube wall,
The flow rate adjustment device according to any one of [1] to [8].
[10]
The plurality of second walls are connected to the second surface, form the opening that opens in the first surface, and are deformed to change a diameter of the opening; The opening is connected to the second surface at a position farther from the center of the first wall than the first cylindrical wall, and the opening is formed in the first surface. A second cylindrical wall whose diameter can be changed,
The thermal expansion coefficient of the first cylindrical wall is larger than the thermal expansion coefficient of the second cylindrical wall.
The flow rate adjustment device according to any one of [1] to [9].
[11]
The flow rate adjusting device according to [1] or [2], wherein each of the plurality of second walls is formed of a piezoelectric body.
[12]
A housing provided with a processing chamber;
A supply section for supplying a fluid to the processing chamber through the plurality of openings;
Any one of [1] to [11]
Further comprising
The first surface faces the processing chamber;
Processing equipment.

  DESCRIPTION OF SYMBOLS 10 ... Semiconductor manufacturing apparatus, 23 ... Refrigerant supply device, 31 ... Housing, 31a ... Chamber, 35 ... Shower plate, 41 ... Outer wall, 42, 42A, 42B, 42C, 42D ... Cylindrical wall, 45 ... Bottom wall, 45a ... 1st surface, 45b ... 2nd surface, 51 ... opening, 55 ... internal cavity, 63 ... refrigerant supply port, 64 ... refrigerant discharge port, 81 ... 1st partition, 82 ... 2nd partition, 85 ... 1st surface 1st chamber, 86 ... second chamber, 87 ... third chamber, 91 ... first communication hole, 92 ... second communication hole, 101 ... pressure pump, 111 ... first piezoelectric body, 112 ... first 2 piezoelectric bodies, G ... gas, M ... refrigerant.

Claims (5)

A first wall having a first surface and a second surface located opposite the first surface;
A plurality of openings that are connected to the second surface at positions spaced apart from each other and open to the first surface and through which a fluid passes, and the width of the opening can be changed by deforming each; A plurality of second walls;
An outer wall having the first wall and accommodating the plurality of second walls;
A pressure adjusting unit that changes the pressure between the plurality of second walls inside the outer wall;
Comprising
The outer wall includes, in the outer wall, a first room in which at least one of the plurality of second walls is disposed, and a portion farther from the center of the first wall than the first room. And a third wall that forms a second chamber in which at least one of the plurality of second walls is disposed,
The pressure adjusting unit makes the pressure in the first chamber different from the pressure in the second chamber;
Flow control device. A first wall having a first surface and a second surface located opposite the first surface;
A plurality of openings that are connected to the second surface at positions spaced apart from each other and open to the first surface and through which a fluid passes, and the width of the opening can be changed by deforming each; A plurality of second walls;
An outer wall having the first wall and accommodating the plurality of second walls;
A pressure adjusting unit that changes the pressure between the plurality of second walls inside the outer wall;
Comprising
The outer wall includes, in the outer wall, a first room in which at least one of the plurality of second walls is disposed, and a portion farther from the center of the first wall than the first room. And a third wall that forms a second chamber in which at least one of the plurality of second walls is disposed,
A flow path connecting the first room and the second room is provided in the third wall,
The pressure adjusting unit changes the pressure of the first chamber;
Flow control device. A first wall having a first surface and a second surface located opposite the first surface;
A plurality of openings that are connected to the second surface at positions spaced apart from each other and open to the first surface and through which a fluid passes, and the width of the opening can be changed by deforming each; A plurality of second walls;
Comprising
The plurality of second walls are connected to the second surface, form the opening that opens in the first surface, and can change the width of the opening by deformation. The opening is connected to the second surface at a position farther from the center of the first wall than the first cylindrical wall, and the opening is formed in the first surface and deformed to form the opening. A second cylindrical wall capable of changing the width of
The thickness of the first tube wall is thinner than the thickness of the second tube wall,
Flow control device. A first wall having a first surface and a second surface located opposite the first surface;
A plurality of openings that are connected to the second surface at positions spaced apart from each other and open to the first surface and through which a fluid passes, and the width of the opening can be changed by deforming each; A plurality of second walls;
Comprising
The plurality of second walls are connected to the second surface, form the opening that opens in the first surface, and can change the width of the opening by deformation. The opening is connected to the second surface at a position farther from the center of the first wall than the first cylindrical wall, and the opening is formed in the first surface and deformed to form the opening. A second cylindrical wall capable of changing the width of
The thermal expansion coefficient of the first cylindrical wall is larger than the thermal expansion coefficient of the second cylindrical wall.
Flow control device. A housing provided with a processing chamber;
A supply section for supplying the fluid to the processing chamber through the plurality of openings;
A flow rate adjusting device according to any one of claims 1 to 4 ,
Further comprising
The first surface faces the processing chamber;
Processing equipment.

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