JP6613467B2 - シリコン酸化膜の成膜方法 - Google Patents

シリコン酸化膜の成膜方法 Download PDF

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JP6613467B2
JP6613467B2 JP2015140077A JP2015140077A JP6613467B2 JP 6613467 B2 JP6613467 B2 JP 6613467B2 JP 2015140077 A JP2015140077 A JP 2015140077A JP 2015140077 A JP2015140077 A JP 2015140077A JP 6613467 B2 JP6613467 B2 JP 6613467B2
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film
silicon oxide
substrate
oxide film
mist
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JP2017022294A5 (enExample
JP2017022294A (ja
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貴博 佐々木
真也 織田
俊実 人羅
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Flosfia Inc
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Flosfia Inc
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JP2015140077A 2015-07-13 2015-07-13 シリコン酸化膜の成膜方法 Active JP6613467B2 (ja)

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JP2017022294A JP2017022294A (ja) 2017-01-26
JP2017022294A5 JP2017022294A5 (enExample) 2018-08-30
JP6613467B2 true JP6613467B2 (ja) 2019-12-04

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6906220B2 (ja) * 2017-02-28 2021-07-21 株式会社Flosfia 処理方法
US10978293B2 (en) 2018-03-28 2021-04-13 Meidensha Corporation Oxide film formation method
CN111902564B (zh) * 2018-03-28 2022-01-11 株式会社明电舍 氧化物膜形成方法
CN111347054A (zh) * 2018-12-21 2020-06-30 财团法人金属工业研究发展中心 磁性粉末复合材料及其制备方法
JP7606190B2 (ja) 2021-02-25 2024-12-25 株式会社デンソー スイッチングデバイスとその製造方法

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