JP6594916B2 - Current detector - Google Patents

Current detector Download PDF

Info

Publication number
JP6594916B2
JP6594916B2 JP2017003019A JP2017003019A JP6594916B2 JP 6594916 B2 JP6594916 B2 JP 6594916B2 JP 2017003019 A JP2017003019 A JP 2017003019A JP 2017003019 A JP2017003019 A JP 2017003019A JP 6594916 B2 JP6594916 B2 JP 6594916B2
Authority
JP
Japan
Prior art keywords
conductor
magnetic field
current
current detection
detection element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2017003019A
Other languages
Japanese (ja)
Other versions
JP2018112472A (en
Inventor
高志 平尾
明博 難波
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Astemo Ltd
Original Assignee
Hitachi Automotive Systems Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Automotive Systems Ltd filed Critical Hitachi Automotive Systems Ltd
Priority to JP2017003019A priority Critical patent/JP6594916B2/en
Priority to PCT/JP2017/043409 priority patent/WO2018131324A1/en
Priority to CN201780083300.2A priority patent/CN110178040B/en
Priority to US16/344,978 priority patent/US10884030B2/en
Priority to DE112017005760.4T priority patent/DE112017005760B4/en
Publication of JP2018112472A publication Critical patent/JP2018112472A/en
Application granted granted Critical
Publication of JP6594916B2 publication Critical patent/JP6594916B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G01R15/207Constructional details independent of the type of device used
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H02M7/53871Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/0003Details of control, feedback or regulation circuits
    • H02M1/0009Devices or circuits for detecting current in a converter
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02PCONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
    • H02P27/00Arrangements or methods for the control of AC motors characterised by the kind of supply voltage
    • H02P27/04Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage
    • H02P27/06Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Inverter Devices (AREA)
  • Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
  • Power Conversion In General (AREA)
  • Electric Propulsion And Braking For Vehicles (AREA)

Description

本発明は、電流検出装置に関し、特に車両駆動用モータに交流電流を供給する電力変換装置に用いられる電流検出装置に関する。   The present invention relates to a current detection device, and more particularly to a current detection device used in a power conversion device that supplies an alternating current to a vehicle drive motor.

電力変換装置等の導体に流れる電流を検出する電流検出装置には、小型化や電流検出精度向上が求められている。   A current detection device that detects a current flowing through a conductor such as a power conversion device is required to be downsized and improve current detection accuracy.

特許文献1には、並列配置された複数の扁平形状の導体(バスバー)の延在方向を設定することで、電流検出の高精度化を可能とする技術が開示されている。   Patent Document 1 discloses a technique that enables high-precision current detection by setting the extending direction of a plurality of flat conductors (bus bars) arranged in parallel.

特開2010−175474号公報JP 2010-175474 A

上記のような電流検出装置について、本発明者らが電流検出のさらなる高精度化を検討したところ、以下に説明するような課題が見出された。   Regarding the current detection apparatus as described above, the present inventors have examined the further improvement in accuracy of current detection, and found the following problems.

特許文献1では、電力変換装置等の扁平形状の導体に交流電流が流れる場合、交流電流の周波数が高くなると、表皮効果のために、導体の中央部の電流密度が減少し、端部の電流密度が増大する。この結果、交流電流の流れによって生じる磁界に基づいて、交流電流の電流量を検出する場合、電流量の検出精度が低下する恐れがある。   In Patent Document 1, when an alternating current flows through a flat conductor such as a power converter, when the frequency of the alternating current increases, the current density at the center of the conductor decreases due to the skin effect, and the current at the end Density increases. As a result, when detecting the amount of alternating current based on the magnetic field generated by the flow of alternating current, the detection accuracy of the amount of current may be reduced.

したがって、電流検出装置において、高周波電流の電流検出を高精度化する技術を提供することが課題となる。   Therefore, it is a problem to provide a technique for improving the current detection of the high-frequency current in the current detection device.

上記課題を解決するために、本発明の電流検出装置は、同一の導体から分流した電流が流れる2つ以上の導体を備え、分流した電流が流れる導体同士が対向する部分を有し、導体同士の対向部では電流が逆向きに流れ、導体同士の対向部の間に磁界検出素子を設けることを特徴とする。   In order to solve the above-described problem, the current detection device of the present invention includes two or more conductors through which a current shunted from the same conductor flows, the conductors through which the shunt current flows are opposed to each other, and the conductors The current flows in the opposite direction at the opposite portion, and a magnetic field detecting element is provided between the opposite portions of the conductors.

本発明によれば、電流検出が高精度な電流検出装置を実現できる。   According to the present invention, it is possible to realize a current detection device with high accuracy of current detection.

ハイブリッド方式の自動車のシステム構成図を示したものである。1 is a system configuration diagram of a hybrid vehicle. 電力変換装置251の回路構成図である。3 is a circuit configuration diagram of a power converter 251. FIG. 実施例1に係る電流検出装置101ないし103の外観斜視図である。1 is an external perspective view of current detection devices 101 to 103 according to a first embodiment. 実施例1に係る電流検出装置101の分解斜視図である。1 is an exploded perspective view of a current detection device 101 according to Embodiment 1. FIG. 磁界検出素子115で検出される磁界について説明するための図3におけるA−A’部の断面図である。FIG. 4 is a cross-sectional view taken along line A-A ′ in FIG. 3 for describing a magnetic field detected by a magnetic field detection element 115. 対向する導体がない場合の導体内の高周波電流密度分布の計算結果を示す図である。It is a figure which shows the calculation result of the high frequency current density distribution in a conductor when there is no opposing conductor. 対向する導体がある場合の導体112と導体113の高周波電流密度分布の計算結果を示したものである。The calculation result of the high frequency current density distribution of the conductor 112 and the conductor 113 when there is an opposing conductor is shown. 実施例2に係る電流検出装置101ないし103の外観斜視図である。7 is an external perspective view of current detection devices 101 to 103 according to Embodiment 2. FIG. 図9は、電流検出装置101ないし103の分解斜視図をそれぞれ示したものである。FIG. 9 is an exploded perspective view of each of the current detection devices 101 to 103. 実施例3に係る電流検出装置401の外観斜視図である。FIG. 6 is an external perspective view of a current detection device 401 according to a third embodiment. 実施例3に係る電流検出装置401の分解斜視図である。FIG. 6 is an exploded perspective view of a current detection device 401 according to a third embodiment. 図10におけるB−B’部の断面構造を示す図である。It is a figure which shows the cross-section of the B-B 'part in FIG.

本発明による電流検出装置においては、同一の導体から分流した電流が流れる2つ以上の導体を備え、分流した電流が流れる導体同士が対向する部分を有し、導体同士の対向部では電流が逆向きに流れ、導体同士の対向部の間に磁界検出素子を設ける。   The current detection device according to the present invention includes two or more conductors through which a current shunted from the same conductor flows, and has a portion where the conductors through which the shunt current flows are opposed to each other, and the current is reversed at the opposing portion of the conductors. The magnetic field detection element is provided between the opposing portions of the conductors.

以下、本発明の実施形態について、図面を参照しながら以下詳細に説明する。   Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

本実施形態に係る電流検出装置は、各種の電力変換装置の導体を流れる電流の検出に適用可能であるが、代表例としてハイブリッド自動車に適用した場合について説明する。   The current detection device according to the present embodiment is applicable to detection of current flowing through conductors of various power conversion devices, but a case where it is applied to a hybrid vehicle will be described as a representative example.

図1は、ハイブリッド方式の自動車のシステム構成図を示したものである。内燃機関EGNおよびモータジェネレータMGは自動車の走行用トルクを発生する動力源である。また、モータジェネレータMGは回転トルクを発生するだけでなく、モータジェネレータMGに加えられる機械エネルギ(回転力)を電力に変換する機能を有する。モータジェネレータMGは、例えば同期電動/発電機あるいは誘導電動/発電機であり、自動車の運転方法により電動機としても発電機としても動作する。   FIG. 1 is a system configuration diagram of a hybrid vehicle. The internal combustion engine EGN and the motor generator MG are power sources that generate driving torque for the automobile. Motor generator MG not only generates rotational torque but also has a function of converting mechanical energy (rotational force) applied to motor generator MG into electric power. The motor generator MG is, for example, a synchronous motor / generator or an induction motor / generator, and operates as a motor or a generator depending on the driving method of the automobile.

内燃機関EGNの出力側は動力分配機構TSMを介してモータジェネレータMGに伝達され、動力分配機構TSMからの回転トルクあるいはモータジェネレータMGが発生する回転トルクは、トランスミッションTMおよびデファレンシャルギアDEFを介して車輪WHに伝達される。   The output side of the internal combustion engine EGN is transmitted to the motor generator MG via the power distribution mechanism TSM, and the rotational torque from the power distribution mechanism TSM or the rotational torque generated by the motor generator MG is transmitted to the wheels via the transmission TM and the differential gear DEF. It is transmitted to WH.

一方、回生制動の運転時には、車輪WHから回転トルクがモータジェネレータMGに伝達され、伝達された回転トルクに基づいてモータジェネレータMGは交流電力を発生する。発生した交流電力は電力変換装置251により直流電力に変換され、高電圧用のバッテリ252を充電し、充電された電力は再び走行エネルギとして使用される。   On the other hand, during regenerative braking operation, rotational torque is transmitted from wheel WH to motor generator MG, and motor generator MG generates AC power based on the transmitted rotational torque. The generated AC power is converted into DC power by the power conversion device 251 to charge the battery 252 for high voltage, and the charged power is used again as travel energy.

電力変換装置251は、インバータ回路210と、平滑コンデンサ255と、を備える。インバータ回路210は平滑コンデンサ255を介してバッテリ252と電気的に接続されており、バッテリ252とインバータ回路210との相互において電力の授受が行われる。平滑コンデンサ255は、インバータ回路210に供給される直流電力を平滑化する。直流コネクタ262は、電力変換装置251に設けられ、かつバッテリ252と平滑コンデンサ255を電気的に接続する。交流コネクタ263は、電力変換装置251に設けられ、かつインバータ回路210とモータジェネレータMGを電気的に接続する。   The power conversion device 251 includes an inverter circuit 210 and a smoothing capacitor 255. The inverter circuit 210 is electrically connected to the battery 252 through the smoothing capacitor 255, and power is exchanged between the battery 252 and the inverter circuit 210. Smoothing capacitor 255 smoothes the DC power supplied to inverter circuit 210. The DC connector 262 is provided in the power converter 251 and electrically connects the battery 252 and the smoothing capacitor 255. AC connector 263 is provided in power conversion device 251 and electrically connects inverter circuit 210 and motor generator MG.

電力変換装置251のマイコン回路203は、通信用のコネクタ261を介して上位の制御装置から指令を受けたり、上位の制御装置に状態を表すデータを送信したりする。マイコン回路203は、入力される指令に基づいて、モータジェネレータMGの制御量を演算し、演算結果に基づいて制御信号を発生してゲート駆動回路204へ制御信号を供給する。この制御信号に基づいてゲート駆動回路204がインバータ回路210を制御するための駆動信号を発生する。   The microcomputer circuit 203 of the power conversion device 251 receives a command from the host control device via the communication connector 261 or transmits data representing the state to the host control device. The microcomputer circuit 203 calculates the control amount of the motor generator MG based on the input command, generates a control signal based on the calculation result, and supplies the control signal to the gate drive circuit 204. Based on this control signal, the gate drive circuit 204 generates a drive signal for controlling the inverter circuit 210.

モータジェネレータMGを電動機として動作させる場合には、インバータ回路210はバッテリ252から供給された直流電力に基づき交流電力を発生し、モータジェネレータMGに供給する。モータジェネレータMGとインバータ回路210からなる構成は電動/発電ユニットとして動作する。   When motor generator MG is operated as an electric motor, inverter circuit 210 generates AC power based on the DC power supplied from battery 252 and supplies it to motor generator MG. The configuration composed of motor generator MG and inverter circuit 210 operates as an electric / power generation unit.

図2は、電力変換装置251の回路構成図である。以下の説明ではパワー半導体素子としてIGBT(Insulated Gate Bipolar Transistor)を使用した例で説明する。   FIG. 2 is a circuit configuration diagram of the power conversion device 251. In the following description, an example in which an IGBT (Insulated Gate Bipolar Transistor) is used as a power semiconductor element will be described.

電力変換装置251は、IGBT201及びダイオード202を備えてなる上アームおよび下アームを、交流電力のU相、V相、W相からなる3相に対応して備えている。これらの3相の上下アームはインバータ回路210を構成する。   The power conversion device 251 includes an upper arm and a lower arm each including an IGBT 201 and a diode 202 corresponding to three phases including a U phase, a V phase, and a W phase of AC power. These three-phase upper and lower arms constitute an inverter circuit 210.

上アームのIGBT201のコレクタ電極は平滑コンデンサ255の正極側のコンデンサ端子に、下アームのIGBT101のエミッタ電極は平滑コンデンサ255の負極側のコンデンサ端子にそれぞれ電気的に接続されている。   The collector electrode of the IGBT 201 on the upper arm is electrically connected to the capacitor terminal on the positive side of the smoothing capacitor 255, and the emitter electrode of the IGBT 101 on the lower arm is electrically connected to the capacitor terminal on the negative side of the smoothing capacitor 255.

IGBT201はコレクタ電極、エミッタ電極、ゲート電極を備えている。また、ダイオード202がコレクタ電極とエミッタ電極との間に電気的に接続されている。なお、パワー半導体素子として、MOSFET(Metal Oxide Semiconductor Field Effect Transistor)を用いてもよく、この場合、ダイオード202は不要である。パワー半導体素子の母体となる材料は、シリコンが広く用いられているが、SiCやGaNでもよい。   The IGBT 201 includes a collector electrode, an emitter electrode, and a gate electrode. A diode 202 is electrically connected between the collector electrode and the emitter electrode. Note that a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) may be used as the power semiconductor element, and in this case, the diode 202 is unnecessary. Silicon is widely used as the base material of the power semiconductor element, but SiC or GaN may also be used.

ゲート駆動回路204は、IGBT201のエミッタ電極と、ゲート電極との間に設けられ、IGBT201をオンオフ制御する。マイコン回路203は、ゲート駆動回路204へ制御信号を供給する。   The gate drive circuit 204 is provided between the emitter electrode of the IGBT 201 and the gate electrode, and controls on / off of the IGBT 201. The microcomputer circuit 203 supplies a control signal to the gate drive circuit 204.

電流検出装置101ないし103は、U相、V相、W相それぞれの交流配線の電流量を検出し、マイコン回路203にフィードバックする。   The current detection devices 101 to 103 detect the amount of current in the U-phase, V-phase, and W-phase AC wirings and feed back to the microcomputer circuit 203.

上述のように、マイコン回路203は電流検出装置101、102、103からのフィードバック信号を受け、インバータ回路210の上アームあるいは下アームを構成するIGBT201を制御する制御信号を発生し、ゲート駆動回路204に供給する。   As described above, the microcomputer circuit 203 receives the feedback signal from the current detection devices 101, 102, and 103, generates a control signal for controlling the IGBT 201 that constitutes the upper arm or the lower arm of the inverter circuit 210, and the gate drive circuit 204. To supply.

ゲート駆動回路204は制御信号に基づき各相の上アームあるいは下アームを構成するIGBT201を駆動するための駆動信号を各相のIGBT201に供給する。IGBT201はゲート駆動回路204からの駆動信号に基づき、オンあるいはオフ動作を行い、バッテリ252から供給された直流電力を三相交流電力に変換し、この変換された電力はモータジェネレータMGに供給される。   Based on the control signal, the gate drive circuit 204 supplies a drive signal for driving the IGBT 201 constituting the upper arm or lower arm of each phase to the IGBT 201 of each phase. The IGBT 201 performs an on or off operation based on a drive signal from the gate drive circuit 204, converts the DC power supplied from the battery 252 into three-phase AC power, and the converted power is supplied to the motor generator MG. .

図3は、実施例1に係る電流検出装置101の外観斜視図である。図4は、実施例1に係る電流検出装置101の分解斜視図である。電流検出装置102及び103も、図3及び図4で示される電流検出装置101と同様の構成である。   FIG. 3 is an external perspective view of the current detection device 101 according to the first embodiment. FIG. 4 is an exploded perspective view of the current detection device 101 according to the first embodiment. The current detection devices 102 and 103 have the same configuration as the current detection device 101 shown in FIGS.

導体111には導体112と導体113が接続される。さらに、導体112と導体113は導体114に接続される。配線基板116は、磁界検出素子115の電源線と信号線が配線されている。   A conductor 112 and a conductor 113 are connected to the conductor 111. Furthermore, the conductor 112 and the conductor 113 are connected to the conductor 114. On the wiring board 116, the power supply line and the signal line of the magnetic field detection element 115 are wired.

磁界検出素子115及び配線基板116は、導体112と導体113が互いに対向するように配置される間の空間に設けられる。   The magnetic field detection element 115 and the wiring board 116 are provided in a space between the conductor 112 and the conductor 113 disposed so as to face each other.

導体111を流れる電流は、導体112と導体113に分流され、導体114で再び合流する。なお、説明の便宜上、導体111ないし114はそれぞれ別の番号を付しているが、例えば、導体111と導体112と導体114を一体の導体としてもよい。導体同士の接合は、はんだ接合や溶接、ネジ止めを用いることができる。   The current flowing through the conductor 111 is divided into the conductor 112 and the conductor 113, and merges again at the conductor 114. For convenience of explanation, the conductors 111 to 114 are given different numbers. For example, the conductor 111, the conductor 112, and the conductor 114 may be integrated. For joining the conductors, solder joining, welding, or screwing can be used.

また、組立性を向上するために、導体113、磁界検出素子115、配線基板116をモジュール化してもよい。例えば、磁界検出素子115と導体113を封止する封止材を設け、導体113の一部が封止材から突出されかつこの突出した部分において導体111と接続される
図5は、磁界検出素子115で検出される磁界について説明するための図3におけるA−A’部の断面図である。
In order to improve the assemblability, the conductor 113, the magnetic field detection element 115, and the wiring board 116 may be modularized. For example, a sealing material for sealing the magnetic field detection element 115 and the conductor 113 is provided, and a part of the conductor 113 protrudes from the sealing material and is connected to the conductor 111 at the protruding portion. FIG. 4 is a cross-sectional view taken along a line AA ′ in FIG. 3 for explaining a magnetic field detected at 115.

導体112は手前から奥に向かって電流が流れ、導体113は奥から手前に向かって電流が流れる。導体112を流れる電流は、時計回りの方向の磁界151を発生させる。導体113を流れる電流は、反時計回りの方向の磁界152を発生させる。   A current flows from the front to the back of the conductor 112, and a current flows from the back to the front of the conductor 113. The current flowing through the conductor 112 generates a magnetic field 151 in the clockwise direction. The current flowing through the conductor 113 generates a magnetic field 152 in a counterclockwise direction.

その結果、磁界検出素子115では磁界151と磁界152の合計値が左から右の方向(−Y方向)に検出される。導体112と導体113を流れる電流は、導体111から分流した電流なので、磁界151と磁界152の合計値は、導体111を流れる電流量に比例する。よって、磁界検出素子115によって導体111を流れる電流量を検出することが可能となる。   As a result, the magnetic field detection element 115 detects the total value of the magnetic field 151 and the magnetic field 152 in the direction from left to right (−Y direction). Since the current flowing through the conductor 112 and the conductor 113 is a current shunted from the conductor 111, the total value of the magnetic field 151 and the magnetic field 152 is proportional to the amount of current flowing through the conductor 111. Therefore, the amount of current flowing through the conductor 111 can be detected by the magnetic field detection element 115.

続いて、導体を流れる高周波電流の表皮効果の抑制について、計算結果を用いて説明する。   Subsequently, suppression of the skin effect of the high-frequency current flowing through the conductor will be described using calculation results.

図6は、対向する導体がない場合の導体112の高周波電流密度分布の計算結果を示したものである。導体112を流れる電流密度分布は、表皮効果のために、中央部の電流密度が減少し、端部の電流密度が増大している。その結果、磁界検出素子115が検出する磁界が減少する。   FIG. 6 shows the calculation result of the high-frequency current density distribution of the conductor 112 when there is no opposing conductor. In the current density distribution flowing through the conductor 112, due to the skin effect, the current density at the center portion decreases and the current density at the end portion increases. As a result, the magnetic field detected by the magnetic field detection element 115 decreases.

図7は、対向する導体がある場合の導体112と導体113の高周波電流密度分布の計算結果を示したものである。導体112と導体113の電流はそれぞれ反対方向に流れるため、導体112と導体113の電流密度分布において表皮効果の影響は抑制されている。その結果、磁界検出素子115が検出する磁界の減少を抑制し、電流検出の高精度化が可能となる。   FIG. 7 shows the calculation result of the high-frequency current density distribution of the conductor 112 and the conductor 113 when there are opposing conductors. Since the currents of the conductor 112 and the conductor 113 flow in opposite directions, the influence of the skin effect is suppressed in the current density distribution of the conductor 112 and the conductor 113. As a result, it is possible to suppress a decrease in the magnetic field detected by the magnetic field detection element 115 and increase the accuracy of current detection.

このように、本実施例によれば、高周波電流の電流検出を高精度化できる。   Thus, according to the present embodiment, the current detection of the high-frequency current can be made highly accurate.

図8は、実施例2に係る電流検出装置101ないし103の外観斜視図である。図9は、電流検出装置101ないし103の分解斜視図をそれぞれ示したものである。   FIG. 8 is an external perspective view of the current detection devices 101 to 103 according to the second embodiment. FIG. 9 is an exploded perspective view of each of the current detection devices 101 to 103.

本実施例においては、実施例1で説明した電流検出装置101と同様の電流検出装置102及び電流検出装置103を並列に配置することで、複数の配線における電流を検出することが可能となる。   In the present embodiment, it is possible to detect currents in a plurality of wires by arranging a current detection device 102 and a current detection device 103 similar to the current detection device 101 described in the first embodiment in parallel.

例えば、図2に示した電力変換装置251において、U相、V相、W相それぞれの交流配線の電流を検出できる。さらに、磁界検出素子115と磁界検出素子125と磁界検出素子135の検出する磁界が他相電流のつくる磁界に対して平行になるため、磁界検出素子115と磁界検出素子125と磁界検出素子135の検出値は他相電流の影響を受けにくくなる。   For example, in the power conversion device 251 illustrated in FIG. 2, the currents in the U-phase, V-phase, and W-phase AC wirings can be detected. Further, since the magnetic fields detected by the magnetic field detection element 115, the magnetic field detection element 125, and the magnetic field detection element 135 are parallel to the magnetic field generated by the other-phase current, the magnetic field detection element 115, the magnetic field detection element 125, and the magnetic field detection element 135 The detected value is less affected by the current of the other phase.

本実施例によれば、本発明の実施例1と同様の効果に加えて、他相の電流の影響を抑制することで、電流検出のさらなる高精度化が可能となる。   According to the present embodiment, in addition to the same effects as in the first embodiment of the present invention, it is possible to further increase the accuracy of current detection by suppressing the influence of the current of the other phase.

図10は、実施例3に係る電流検出装置401の外観斜視図である。図11は、実施例3に係る電流検出装置401の分解斜視図である。   FIG. 10 is an external perspective view of the current detection device 401 according to the third embodiment. FIG. 11 is an exploded perspective view of the current detection device 401 according to the third embodiment.

導体111には導体112と導体113と導体142と導体143が接続されている。さらに、導体112と導体113と導体142と導体143は、導体114に接続される。   A conductor 112, a conductor 113, a conductor 142, and a conductor 143 are connected to the conductor 111. Furthermore, the conductor 112, the conductor 113, the conductor 142, and the conductor 143 are connected to the conductor 114.

導体112と導体113が互いに対向するように配置される間の空間に磁界検出素子115が設けられる。さらに導体142と導体143が互いに対向するように配置される間の空間に磁界検出素子145が設けられる。また、導体112と導体113が互いに対向するように配置される間と導体142と導体143が互いに対向するように配置される間を貫通するように、磁界検出素子115と磁界検出素子145の電源線と信号線が配線されている配線基板116が設けられる。   A magnetic field detection element 115 is provided in a space between the conductor 112 and the conductor 113 disposed so as to face each other. Further, a magnetic field detection element 145 is provided in a space between the conductor 142 and the conductor 143 disposed so as to face each other. Further, the power supplies of the magnetic field detection element 115 and the magnetic field detection element 145 pass through between the conductor 112 and the conductor 113 disposed so as to face each other and between the conductor 142 and the conductor 143 disposed so as to face each other. A wiring board 116 on which lines and signal lines are wired is provided.

導体111を流れる電流は、導体112と導体113と導体142と導体143に分流され、導体114で再び合流する。図10におけるA−A’部の断面図は図5と同様である。   The current flowing through the conductor 111 is divided into the conductor 112, the conductor 113, the conductor 142, and the conductor 143, and merges again at the conductor 114. 10 is the same as FIG. 5.

図12は、図3におけるB−B’部の断面図を示したものである。磁界検出素子145では磁界161と磁界162の合計値が右から左の方向(+Y方向)に検出される。よって、磁界検出素子115の−Y方向の磁界検出値と、磁界検出素子145の+Y方向の磁界検出値との合計値は、導体111を流れる電流値に比例する。よって、磁界検出素子115、145によって導体111を流れる電流量を検出することが可能となる。さらに、磁界検出素子115と145とはそれぞれ反対方向の磁界を検出するため、一方向(−Y方向または+Y方向)の外乱磁界は、磁界検出素子115と145の磁界検出値を合計することで相殺される。その結果、外乱を抑制することが可能となる。   FIG. 12 is a cross-sectional view taken along the line B-B ′ in FIG. 3. The magnetic field detection element 145 detects the total value of the magnetic field 161 and the magnetic field 162 in the right-to-left direction (+ Y direction). Therefore, the total value of the magnetic field detection value in the −Y direction of the magnetic field detection element 115 and the magnetic field detection value in the + Y direction of the magnetic field detection element 145 is proportional to the current value flowing through the conductor 111. Therefore, the amount of current flowing through the conductor 111 can be detected by the magnetic field detection elements 115 and 145. Further, since the magnetic field detection elements 115 and 145 detect magnetic fields in opposite directions, the disturbance magnetic field in one direction (−Y direction or + Y direction) is obtained by summing the magnetic field detection values of the magnetic field detection elements 115 and 145. Offset. As a result, disturbance can be suppressed.

本実施例によれば、本発明の実施例1と同様の効果に加えて、磁界の外乱を抑制することで、電流検出のさらなる高精度化が可能となる。   According to the present embodiment, in addition to the same effects as those of the first embodiment of the present invention, it is possible to further improve the accuracy of current detection by suppressing the disturbance of the magnetic field.

以上説明したように、本発明は、電流検出装置に関し、特に、ハイブリッド自動車や電気自動車に用いるインバータシステムに適用可能である。また、鉄道車両の駆動システムや一般産業のモータドライブにも使用可能である。   As described above, the present invention relates to a current detection device, and is particularly applicable to an inverter system used in a hybrid vehicle or an electric vehicle. It can also be used in a railway vehicle drive system and a general industry motor drive.

なお、本発明の技術的範囲は上記の各実施例に限定されるものではなく、本発明の技術的思想の範囲内で、種々の変形例が可能であることはいうまでもない。   It should be noted that the technical scope of the present invention is not limited to the above-described embodiments, and it goes without saying that various modifications are possible within the scope of the technical idea of the present invention.

101…電流検出装置、102…電流検出装置、103…電流検出装置、111…導体、112…導体、113…導体、114…導体、115…磁界検出素子、配線基板116、121…導体、122…導体、123…導体、124…導体、131…導体、132…導体、133…導体、134…導体、142…導体、143…導体、125…磁界検出素子、135…磁界検出素子、145…磁界検出素子、151…磁界、152…磁界、161…磁界、162…磁界、201…IGBT、202…ダイオード、203…マイコン回路、204…ゲート駆動回路、210…インバータ回路、251…電力変換装置、252…バッテリ、255…平滑コンデンサ、261…コネクタ、262…直流コネクタ、263…交流コネクタ、DEF…デファレンシャルギア、EGN…内燃機関、MG…モータジェネレータ、TSM…動力分配機構、WH…車輪 DESCRIPTION OF SYMBOLS 101 ... Current detection apparatus, 102 ... Current detection apparatus, 103 ... Current detection apparatus, 111 ... Conductor, 112 ... Conductor, 113 ... Conductor, 114 ... Conductor, 115 ... Magnetic field detection element, wiring board 116, 121 ... Conductor, 122 ... Conductor, 123 ... conductor, 124 ... conductor, 131 ... conductor, 132 ... conductor, 133 ... conductor, 134 ... conductor, 142 ... conductor, 143 ... conductor, 125 ... magnetic field detection element, 135 ... magnetic field detection element, 145 ... magnetic field detection Element 151 ... Magnetic field 152 ... Magnetic field 161 ... Magnetic field 162 ... Magnetic field 201 IGBT ... Battery, 255 ... smoothing capacitor, 261 ... connector, 262 ... DC connector, 263 ... AC connector, DEF ... Arensharugia, EGN ... internal combustion engine, MG ... motor-generator, TSM ... power distribution mechanism, WH ... wheel

Claims (5)

第1導体と、
前記第1導体に接続される第2導体と、
前記第1導体に接続される第3導体と、
第1磁界検出素子と、を備え、
前記第1導体に流れる電流が、前記第2導体と前記第3導体に分流され、
前記第3導体は、前記第2導体と対向する対向部を有し、
前記第3導体は、前記対向部が前記第2導体に流れる電流と前記第3導体に流れる電流が逆向きになるように形成され、
前記第1磁界検出素子は、前記第3導体の対向部と前記第2導体の間の空間に配置される電流検出装置。
A first conductor;
A second conductor connected to the first conductor;
A third conductor connected to the first conductor;
A first magnetic field detection element,
A current flowing through the first conductor is shunted to the second conductor and the third conductor;
The third conductor has a facing portion facing the second conductor,
The third conductor is formed such that the current flowing in the second conductor and the current flowing in the third conductor are opposite in the facing portion.
The first magnetic field detection element is a current detection device arranged in a space between a facing portion of the third conductor and the second conductor.
請求項1に記載の電流検出装置において、
前記第1磁界検出素子と前記第3導体を封止する封止材を備え、
前記第3導体の一部は、前記封止材から突出されかつ当該突出した部分において第1導体と接続される電流検出装置。
The current detection device according to claim 1,
A sealing material for sealing the first magnetic field detection element and the third conductor;
A part of said 3rd conductor protrudes from the said sealing material, and is an electric current detection apparatus connected with a 1st conductor in the said protruded part.
請求項1に記載の電流検出装置において、
前記第1導体に接続される第4導体と、前記第1導体に接続される第5導体と、第2磁界検出素子と、を備え、
前記第1導体に流れる電流が、前記第4導体と前記第5導体に分流され、
前記第4導体は、前記第5導体と対向する対向部を有し、
前記第5導体は、前記対向部が前記第4導体に流れる電流と前記第5導体に流れる電流が逆向きになるように形成され、
前記第2磁界検出素子は、前記第5導体の対向部と前記第4導体の間の空間に配置され、
前記第1磁界検出素子と、前記第2磁界検出素子の磁界検出面が互いに対向する電流検出装置。
The current detection device according to claim 1,
A fourth conductor connected to the first conductor, a fifth conductor connected to the first conductor, and a second magnetic field detection element,
A current flowing through the first conductor is shunted between the fourth conductor and the fifth conductor;
The fourth conductor has a facing portion facing the fifth conductor,
The fifth conductor is formed so that the current flowing in the fourth conductor and the current flowing in the fifth conductor are opposite in the opposing portion,
The second magnetic field detection element is disposed in a space between the facing portion of the fifth conductor and the fourth conductor;
A current detection device in which the first magnetic field detection element and the magnetic field detection surface of the second magnetic field detection element face each other.
パワー半導体素子によって電力を変換する電力変換装置において、
請求項1乃至3に記載のいずれかの電流検出装置を電流量の検出に用いられる電力変換装置。
In a power conversion device that converts power by a power semiconductor element,
A power conversion device, wherein the current detection device according to claim 1 is used for detection of a current amount.
請求項4に記載の電力変換装置において、
前記電流検出装置は他相の電流検出装置に対して、前記第1導体を流れる電流が概平行となるように配置される電力変換装置。
The power conversion device according to claim 4,
The current detection device is a power conversion device arranged such that a current flowing through the first conductor is substantially parallel to a current detection device of another phase.
JP2017003019A 2017-01-12 2017-01-12 Current detector Active JP6594916B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2017003019A JP6594916B2 (en) 2017-01-12 2017-01-12 Current detector
PCT/JP2017/043409 WO2018131324A1 (en) 2017-01-12 2017-12-04 Current detection device
CN201780083300.2A CN110178040B (en) 2017-01-12 2017-12-04 Current detection device
US16/344,978 US10884030B2 (en) 2017-01-12 2017-12-04 Current detection device
DE112017005760.4T DE112017005760B4 (en) 2017-01-12 2017-12-04 Current detection device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017003019A JP6594916B2 (en) 2017-01-12 2017-01-12 Current detector

Publications (2)

Publication Number Publication Date
JP2018112472A JP2018112472A (en) 2018-07-19
JP6594916B2 true JP6594916B2 (en) 2019-10-23

Family

ID=62839975

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017003019A Active JP6594916B2 (en) 2017-01-12 2017-01-12 Current detector

Country Status (5)

Country Link
US (1) US10884030B2 (en)
JP (1) JP6594916B2 (en)
CN (1) CN110178040B (en)
DE (1) DE112017005760B4 (en)
WO (1) WO2018131324A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11070140B2 (en) * 2018-10-25 2021-07-20 Eaton Intelligent Power Limited Low inductance bus assembly and power converter apparatus including the same
JP7099938B2 (en) * 2018-11-16 2022-07-12 株式会社日立製作所 Power semiconductor device
AT523610B1 (en) * 2020-03-05 2021-12-15 Avl List Gmbh converter assembly
DE102021126850A1 (en) 2021-10-15 2023-04-20 Infineon Technologies Ag SEMICONDUCTOR MODULE, METHOD OF MANUFACTURE OF SEMICONDUCTOR MODULE AND SYSTEM

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10107811A1 (en) 2001-02-20 2002-09-19 Bosch Gmbh Robert Device, ammeter and motor vehicle
DE10107812B4 (en) * 2001-02-20 2014-10-16 Robert Bosch Gmbh Device for measuring the electric current
WO2003085814A1 (en) * 2002-04-04 2003-10-16 Hitachi, Ltd. Power converter, power system provided with same, and mobile body
US7188037B2 (en) * 2004-08-20 2007-03-06 Microcraft Method and apparatus for testing circuit boards
JP2007183221A (en) 2006-01-10 2007-07-19 Denso Corp Electric current sensor
JP2008039734A (en) * 2006-08-10 2008-02-21 Koshin Denki Kk Current sensor
JP2009271044A (en) * 2008-05-07 2009-11-19 Kohshin Electric Corp Current sensor
JP4988665B2 (en) * 2008-08-06 2012-08-01 日立オートモティブシステムズ株式会社 Semiconductor device and power conversion device using the semiconductor device
DE102008039568B4 (en) * 2008-08-25 2015-03-26 Seuffer gmbH & Co. KG Current detection device
DE102008061006A1 (en) 2008-11-28 2010-06-02 Esw Gmbh Method and device for measuring electric current
JP5418811B2 (en) 2009-01-30 2014-02-19 アイシン・エィ・ダブリュ株式会社 Current detector
JP5380376B2 (en) * 2010-06-21 2014-01-08 日立オートモティブシステムズ株式会社 Power semiconductor device
JP5542646B2 (en) * 2010-12-24 2014-07-09 日立オートモティブシステムズ株式会社 Power module manufacturing method, power module design method
US8975889B2 (en) * 2011-01-24 2015-03-10 Infineon Technologies Ag Current difference sensors, systems and methods
WO2012117841A1 (en) * 2011-03-02 2012-09-07 アルプス・グリーンデバイス株式会社 Current sensor
JP2013238580A (en) * 2011-12-28 2013-11-28 Tdk Corp Current sensor
JP5879233B2 (en) * 2012-08-31 2016-03-08 日立オートモティブシステムズ株式会社 Power semiconductor module
EP2963428A4 (en) * 2013-02-27 2016-12-28 Murata Manufacturing Co Current sensor and electronic device containing same
WO2014192625A1 (en) * 2013-05-30 2014-12-04 株式会社村田製作所 Current sensor
DE102013112760A1 (en) * 2013-11-19 2015-05-21 Danfoss Silicon Power Gmbh Power module with integrated current measurement
JP2015132534A (en) * 2014-01-14 2015-07-23 株式会社東海理化電機製作所 Current detection device
EP2942631B1 (en) * 2014-04-28 2024-03-06 TYCO ELECTRONICS AMP KOREA Co., Ltd. Hybrid current sensor assembly
KR20160016191A (en) * 2014-08-04 2016-02-15 현대모비스 주식회사 Size optimization structure for assembly of current sensor and power conductor
CN204631118U (en) * 2015-05-14 2015-09-09 长沙美能电力设备股份有限公司 A kind of novel air magnetic conduction current sensor

Also Published As

Publication number Publication date
US20190271724A1 (en) 2019-09-05
WO2018131324A1 (en) 2018-07-19
US10884030B2 (en) 2021-01-05
JP2018112472A (en) 2018-07-19
CN110178040A (en) 2019-08-27
DE112017005760T5 (en) 2019-08-22
CN110178040B (en) 2021-07-30
DE112017005760B4 (en) 2024-07-25

Similar Documents

Publication Publication Date Title
JP7116287B2 (en) power converter
JP6594916B2 (en) Current detector
JP5207085B2 (en) Current detector
JP5455888B2 (en) Power converter for vehicle
JP5622043B2 (en) Inverter device
WO2013015106A1 (en) Power conversion device
WO2010038541A1 (en) Power converter
US20130038140A1 (en) Switching circuit
JP2018148695A (en) Rotary electric machine controller and electric power steering device using the same
JP2009273071A (en) Device and method of driving semiconductor device
JP5802629B2 (en) Power converter
EP3651341A1 (en) Driving power supply device
JP2013005067A (en) Power conversion apparatus
JP6243320B2 (en) Power semiconductor module
WO2015049774A1 (en) Electrical power conversion device
JP2014241700A (en) Power conversion device
JP7569265B2 (en) Inverter control device, power conversion device
JP6272064B2 (en) Power converter
JP5972775B2 (en) Power converter
JP2019062585A (en) Semiconductor device
JP5798951B2 (en) Inverter device
JP6996403B2 (en) Power converter
JP2016086491A (en) Semiconductor device
CN217935444U (en) Power conversion device, motor module, and vehicle
JP2014175433A (en) Power module and electric power conversion apparatus using the same

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170113

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20190220

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190222

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20190827

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20190925

R150 Certificate of patent or registration of utility model

Ref document number: 6594916

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250