JP6572341B2 - メモリへの電力利用可能性情報の供給 - Google Patents
メモリへの電力利用可能性情報の供給 Download PDFInfo
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- JP6572341B2 JP6572341B2 JP2018072982A JP2018072982A JP6572341B2 JP 6572341 B2 JP6572341 B2 JP 6572341B2 JP 2018072982 A JP2018072982 A JP 2018072982A JP 2018072982 A JP2018072982 A JP 2018072982A JP 6572341 B2 JP6572341 B2 JP 6572341B2
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- 230000015654 memory Effects 0.000 title claims description 246
- 238000000034 method Methods 0.000 claims description 15
- 238000010586 diagram Methods 0.000 description 21
- 230000004044 response Effects 0.000 description 9
- 238000003491 array Methods 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920001690 polydopamine Polymers 0.000 description 1
- 238000013403 standard screening design Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
- G11C5/144—Detection of predetermined disconnection or reduction of power supply, e.g. power down or power standby
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/14—Handling requests for interconnection or transfer
- G06F13/16—Handling requests for interconnection or transfer for access to memory bus
- G06F13/1668—Details of memory controller
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/142—Contactless power supplies, e.g. RF, induction, or IR
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4072—Circuits for initialization, powering up or down, clearing memory or presetting
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Sources (AREA)
- Memory System (AREA)
Description
Claims (15)
- メモリデバイスにおいてホストから信号を受信することと、
前記ホストからの前記信号に少なくとも部分的に基づいて、前記メモリデバイスへの電力が停止されていることの指示を特定することと、
前記メモリデバイスが現在の動作状態で動作を継続できる時間量を判定することであって、前記時間量は、無制限の時間量、前記無制限の時間量よりも短い第1の時間量、前記第1の時間量よりも短い第2の時間量、又は前記第2の時間量よりも短い第3の時間量である、ことと、
前記時間量の間、前記現在の動作状態で前記メモリデバイスを動作させることと、
を含む、方法。 - 前記指示に少なくとも部分的に基づく信号を前記メモリデバイスのコントローラから送信することと、
前記時間量の後、異なる動作状態で前記メモリデバイスを動作させることと、
を更に含む、請求項1に記載の方法。 - 前記異なる動作状態で前記メモリデバイスを動作させることは、前記メモリデバイスへの電力が停止されていることの前記指示に少なくとも部分的に基づいて前記メモリデバイスの動作を中止することを含む、請求項2に記載の方法。
- 前記異なる動作状態で前記メモリデバイスを動作させることは、前記メモリデバイスへの電力が停止されていることの前記指示に少なくとも部分的に基づいて前記メモリデバイスの動作を停止することを含む、請求項2に記載の方法。
- 前記メモリデバイスへの電力は、前記ホストと前記メモリデバイスとの間の距離に左右される、請求項1に記載の方法。
- メモリとコントローラとを含む装置であって、
前記コントローラは、
ホストから信号を受信することと、
前記ホストからの前記信号に少なくとも部分的に基づいて、前記メモリデバイスへの電力が停止されていることの指示を特定することと、
前記メモリデバイスが現在の動作状態で動作を継続できる時間量を判定することであって、前記時間量は、無制限の時間量、前記無制限の時間量よりも短い第1の時間量、前記第1の時間量よりも短い第2の時間量、又は前記第2の時間量よりも短い第3の時間量である、ことと、
前記時間量の間、前記現在の動作状態で前記メモリデバイスを動作させることと、
を実行するように構成されている、装置。 - 前記装置は、前記ホストから前記信号を受信するように構成されたインタフェースを含み、
前記コントローラは、前記インタフェースを通じて前記ホストから前記信号を受信するように構成される、請求項6に記載の装置。 - 前記メモリは、前記時間量の後、その電流消費をゼロに減少させるように構成される、請求項6に記載の装置。
- メモリデバイスが現在の動作状態で動作を継続できる時間量の指示を判定することであって、前記時間量は、無制限の時間量、前記無制限の時間量よりも短い第1の時間量、前記第1の時間量よりも短い第2の時間量、又は前記第2の時間量よりも短い第3の時間量である、ことと、
ホストから前記メモリデバイスのコントローラへ信号を送信することと、
前記メモリデバイスが前記現在の動作状態で動作を継続できる前記時間量の間、前記メモリデバイスに電力を供給することと、
を含む、方法。 - 前記指示が判定されたときの前記メモリデバイスの電流消費は、前記コントローラにより提供できる最大電流レベルよりも高いレベルである、請求項9に記載の方法。
- 前記ホストから前記コントローラへ送信される前記信号は、前記コントローラにより提供できる前記最大電流レベルを増加させるための信号を含む、請求項10に記載の方法。
- 前記メモリデバイスが前記現在の動作状態で動作を継続できる前記時間量の前記指示に少なくとも部分的に基づいて、前記メモリを前記ホストにより近接して移動させることを更に含む、請求項9に記載の方法。
- メモリデバイスとホストとを含むコンピューティングシステムであって、
前記メモリデバイスは、前記メモリデバイスが現在の動作状態で動作を継続できる時間量の指示を判定するように構成されており、前記時間量は、無制限の時間量、前記無制限の時間量よりも短い第1の時間量、前記第1の時間量よりも短い第2の時間量、又は前記第2の時間量よりも短い第3の時間量であり、
前記ホストは、
前記ホストから前記メモリデバイスのコントローラへ信号を送信し、
前記メモリデバイスが前記現在の動作状態で動作を継続できる前記時間量の間、前記メモリデバイスに電力を供給する
ように構成されている、コンピューティングシステム。 - 前記コントローラにより提供されている電圧供給は、前記指示が判定されたときに閾値レベルに到達する、請求項13に記載のコンピューティングシステム。
- 前記ホストは、前記時間量の後前記メモリデバイスが前記現在の動作状態で動作を継続するための信号を前記ホストから前記コントローラへ送信するように更に構成される、請求項13に記載のコンピューティングシステム。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/288,618 | 2014-05-28 | ||
US14/288,618 US9343116B2 (en) | 2014-05-28 | 2014-05-28 | Providing power availability information to memory |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2017513586A Division JP6321887B2 (ja) | 2014-05-28 | 2015-05-14 | メモリへの電力利用可能性情報の供給 |
Publications (2)
Publication Number | Publication Date |
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JP2018136971A JP2018136971A (ja) | 2018-08-30 |
JP6572341B2 true JP6572341B2 (ja) | 2019-09-04 |
Family
ID=54699550
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017513586A Active JP6321887B2 (ja) | 2014-05-28 | 2015-05-14 | メモリへの電力利用可能性情報の供給 |
JP2018072982A Active JP6572341B2 (ja) | 2014-05-28 | 2018-04-05 | メモリへの電力利用可能性情報の供給 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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JP2017513586A Active JP6321887B2 (ja) | 2014-05-28 | 2015-05-14 | メモリへの電力利用可能性情報の供給 |
Country Status (7)
Country | Link |
---|---|
US (8) | US9343116B2 (ja) |
EP (2) | EP3149733B1 (ja) |
JP (2) | JP6321887B2 (ja) |
KR (2) | KR102001358B1 (ja) |
CN (2) | CN106415724B (ja) |
SG (2) | SG11201609854XA (ja) |
WO (1) | WO2015183573A1 (ja) |
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US10503241B2 (en) * | 2017-05-16 | 2019-12-10 | Micron Technology, Inc. | Providing energy information to memory |
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2014
- 2014-05-28 US US14/288,618 patent/US9343116B2/en active Active
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2015
- 2015-05-14 JP JP2017513586A patent/JP6321887B2/ja active Active
- 2015-05-14 EP EP15800213.9A patent/EP3149733B1/en active Active
- 2015-05-14 SG SG11201609854XA patent/SG11201609854XA/en unknown
- 2015-05-14 KR KR1020187025592A patent/KR102001358B1/ko active IP Right Grant
- 2015-05-14 CN CN201580028169.0A patent/CN106415724B/zh active Active
- 2015-05-14 KR KR1020167035634A patent/KR101899231B1/ko active IP Right Grant
- 2015-05-14 CN CN202010053188.1A patent/CN111292778B/zh active Active
- 2015-05-14 EP EP19170778.5A patent/EP3537441B1/en active Active
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