JP6564614B2 - Inductor and method of manufacturing inductor - Google Patents

Description

  The present invention relates to an inductor and a method for manufacturing the inductor.

  In recent years, downsizing of electronic devices such as game machines and mobile phones has been accelerated, and along with this, demands for downsizing of various elements such as inductors mounted on such electronic devices have increased. Yes. As an inductor mounted on such an electronic device, for example, an inductor using a wound coil is known. An inductor using a wound coil is used, for example, in a power supply circuit of an electronic device (see, for example, Patent Document 1).

JP 2003-168610 A

  However, it is considered that the limit of downsizing of an inductor using a wound coil is about 1.6 mm × 1.6 mm in a planar shape. This is because there is a limit to the thickness of the winding, and if the size is further reduced, the ratio of the volume of the winding to the total area of the inductor decreases, and the inductance cannot be increased. Therefore, it is desired to develop an inductor that can be easily reduced in size.

According to one aspect of the present invention, a stacked body in which a plurality of structures each having a wiring that is a part of a coil and an insulating layer formed on the wiring is stacked, and the stacked body is penetrated in the thickness direction. A first through hole and an insulating film covering the surface of the wiring exposed on the surface of the multilayer body, wherein the insulating film of the wiring exposed on the inner wall surface of the first through hole. The insulating resin that covers the end surface and is exposed to the end surface of the insulating layer exposed on the inner wall surface of the first through hole, and that contains a magnetic substance in the first through hole. And the wirings of the structures adjacent to each other in the vertical direction are connected in series to form the spiral coil.

  According to one aspect of the present invention, there is an effect that the size can be reduced.

The schematic plan view which shows the coil board | substrate of 1st Embodiment. The enlarged plan view which expanded a part of coil board of a 1st embodiment. The schematic sectional drawing which shows the coil board | substrate of 1st Embodiment. The schematic sectional drawing which shows the coil board | substrate of 1st Embodiment. The disassembled perspective view of the laminated body of 1st Embodiment. The disassembled perspective view of the laminated body of 1st Embodiment. The schematic perspective view which shows the wiring of 1st Embodiment. (A) is a schematic sectional drawing which shows the coil board | substrate after singulation, (b) is a schematic sectional drawing which shows the inductor of 1st Embodiment. The schematic plan view which shows the manufacturing method of the coil board | substrate of 1st Embodiment. (A) is schematic sectional drawing (10a-10a sectional drawing in FIG.10 (b)) which shows the manufacturing method of the coil board | substrate of 1st Embodiment, (b) shows the manufacturing method of the coil board | substrate of 1st Embodiment. FIG. (A) is schematic sectional drawing (10a-10a sectional drawing in FIG.10 (b)) which shows the manufacturing method of the coil board | substrate of 1st Embodiment, (b) shows the manufacturing method of the coil board | substrate of 1st Embodiment. The schematic sectional drawing (11b-11b sectional drawing in FIG.11 (c)) shown, (c) is a schematic plan view which shows the manufacturing method of the coil board | substrate of 1st Embodiment. (A) is schematic sectional drawing (12a-12a sectional drawing in FIG.12 (c)) which shows the manufacturing method of the coil substrate of 1st Embodiment, (b) is the manufacturing method of the coil substrate of 1st Embodiment. 12b-12b sectional view in a schematic sectional view (FIG. 12C) shown, (c) is a schematic plan view showing a manufacturing method of the coil substrate of the first embodiment. (A)-(c) is a schematic sectional drawing which shows the manufacturing method of the coil board | substrate of 1st Embodiment. (A), (b) is a schematic sectional drawing which shows the manufacturing method of the coil board | substrate of 1st Embodiment. (A) is schematic sectional drawing (15a-15a sectional drawing in FIG.15 (b)) which shows the manufacturing method of the coil substrate of 1st Embodiment, (b) is the manufacturing method of the coil substrate of 1st Embodiment. FIG. (A)-(c) is a schematic sectional drawing which shows the manufacturing method of the coil board | substrate of 1st Embodiment. (A) is schematic sectional drawing (17a-17a sectional drawing in FIG.17 (b)) which shows the manufacturing method of the coil substrate of 1st Embodiment, (b) is the manufacturing method of the coil substrate of 1st Embodiment. FIG. (A), (b) is a schematic sectional drawing which shows the manufacturing method of the coil board | substrate of 1st Embodiment. (A) is schematic sectional drawing (19a-19a sectional drawing in FIG.19 (b)) which shows the manufacturing method of the coil board | substrate of 1st Embodiment, (b) shows the manufacturing method of the coil board | substrate of 1st Embodiment. FIG. (A), (b) is a schematic sectional drawing which shows the manufacturing method of the coil board | substrate of 1st Embodiment. (A) is schematic sectional drawing (21a-21a sectional drawing in FIG.21 (b)) which shows the manufacturing method of the coil substrate of 1st Embodiment, (b) is the manufacturing method of the coil substrate of 1st Embodiment. FIG. (A), (b) is a schematic sectional drawing which shows the manufacturing method of the coil board | substrate of 1st Embodiment. (A) is schematic sectional drawing (23a-23a sectional drawing in FIG.23 (c)) which shows the manufacturing method of the coil substrate of 1st Embodiment, (b) is the manufacturing method of the coil substrate of 1st Embodiment. Schematic cross-sectional view (cross-sectional view of 23b-23b in FIG. 23C), (c) is a schematic plan view showing a manufacturing method of the coil substrate of the first embodiment. (A), (b) is a schematic sectional drawing which shows the manufacturing method of the coil board | substrate of 1st Embodiment. (A), (b) is a schematic sectional drawing which shows the manufacturing method of the coil board | substrate of 1st Embodiment. (A), (b) is a schematic plan view which shows the manufacturing method of the coil board | substrate of 1st Embodiment. The schematic perspective view which shows the metal layer before shaping | molding. (A) is schematic sectional drawing (28a-28a sectional drawing in FIG.28 (b)) which shows the manufacturing method of the coil substrate of 1st Embodiment, (b) is the manufacturing method of the coil substrate of 1st Embodiment. FIG. The schematic plan view which shows the manufacturing method of the coil board | substrate of 1st Embodiment. (A) is schematic sectional drawing (30a-30a sectional drawing in FIG. 29) which shows the manufacturing method of the coil board | substrate of 1st Embodiment, (b) is schematic sectional drawing which shows the manufacturing method of the inductor of 1st Embodiment. . (A), (b) is a schematic sectional drawing which shows the manufacturing method of the inductor of 1st Embodiment. The schematic sectional drawing which shows the inductor of a modification. The schematic sectional drawing which shows the inductor of a modification. The schematic sectional drawing which shows the inductor of 2nd Embodiment. (A)-(c) is a schematic sectional drawing which shows the manufacturing method of the inductor of 2nd Embodiment. (A), (b) is a schematic sectional drawing which shows the manufacturing method of the inductor of 2nd Embodiment. (A), (b) is a schematic sectional drawing which shows the manufacturing method of the inductor of 2nd Embodiment. The schematic sectional drawing which shows the manufacturing method of the inductor of 2nd Embodiment. The schematic sectional drawing which shows the inductor of 3rd Embodiment. (A) is schematic sectional drawing (40a-40a sectional drawing in FIG.40 (c)) which shows the manufacturing method of the inductor of 3rd Embodiment, (b) is schematic which shows the manufacturing method of the inductor of 3rd Embodiment. Sectional drawing (40b-40b sectional drawing in FIG.40 (c)), (c) is a schematic plan view which shows the manufacturing method of the inductor of 3rd Embodiment. (A) is schematic sectional drawing which shows the manufacturing method of the inductor of 3rd Embodiment, (b) is schematic sectional drawing which shows the manufacturing method of the inductor of 3rd Embodiment (41b-41b cross section in FIG.41 (c)) (FIG.), (C) is a schematic plan view which shows the manufacturing method of the inductor of 3rd Embodiment. (A)-(d) is a schematic sectional drawing which shows the manufacturing method of the inductor of 3rd Embodiment. (A), (b) is a schematic sectional drawing which shows the manufacturing method of the inductor of 3rd Embodiment. (A), (b) is a schematic sectional drawing which shows the manufacturing method of the inductor of 3rd Embodiment. (A), (b) is a schematic sectional drawing which shows the manufacturing method of the inductor of 3rd Embodiment. The schematic sectional drawing which shows the inductor of a modification. The schematic sectional drawing which shows the inductor of a modification. FIG. 50 is a schematic cross-sectional view showing the inductor of the fourth embodiment (48-48 cross-sectional view in FIG. 49). The schematic plan view which shows the laminated body of the inductor of 4th Embodiment. (A), (b) is a schematic sectional drawing which shows the manufacturing method of the inductor of 4th Embodiment. (A) is a schematic plan view which shows the manufacturing method of the inductor of 4th Embodiment, (b) is a schematic sectional drawing which shows the manufacturing method of the inductor of 4th Embodiment. The schematic sectional drawing which shows the inductor of a modification. The schematic sectional drawing which shows the inductor of a modification.

  Hereinafter, each embodiment will be described with reference to the accompanying drawings. In the accompanying drawings, in order to make the features easy to understand, the portions that become the features may be shown in an enlarged manner for the sake of convenience, and the dimensional ratios and the like of the respective components are not always the same as the actual ones. In the cross-sectional view, in order to make the cross-sectional structure of each member easy to understand, the hatching of some members is shown in place of a satin pattern, and the hatching of some members is omitted.

(First embodiment)
Hereinafter, the first embodiment will be described with reference to FIGS.
First, the structure of the coil substrate 10 will be described.

  As shown in FIG. 1, the coil substrate 10 is formed in, for example, a substantially rectangular shape in plan view. The coil substrate 10 has a block 11 provided with a plurality of individual regions A1 and an outer frame 13 formed to protrude outward from the block 11. The block 11 is formed in, for example, a substantially rectangular shape in plan view. In the block 11, a plurality of individual regions A1 are provided in a matrix (here 2 × 6). Here, the individual regions A1 are regions that are finally cut along the broken lines to be separated into individual unit coil substrates (coil substrates) 20. That is, the block 11 is a region having a plurality of individual regions A1 that become individual coil substrates 20.

  The plurality of individual regions A1 may be arranged at a predetermined interval as shown in FIG. 1, or may be arranged so as to be in contact with each other. In the example shown in FIG. 1, the block 11 has 12 individual areas A1, but the number of individual areas A1 is not particularly limited.

  The block 11 has a connecting portion 12 that connects a plurality of coil substrates 20. The connecting portion 12 is formed so as to surround the plurality of coil substrates 20. The connecting portion 12 supports a plurality of coil substrates 20.

  For example, the outer frame 13 is formed in both end regions of the coil substrate 10. The outer frame 13 is formed, for example, so as to protrude outward from the short side of the block 11. The outer frame 13 has a plurality of sprocket holes 13X. The plurality of sprocket holes 13X are continuously formed at substantially constant intervals, for example, along the short side direction (vertical direction in the drawing) of the coil substrate 10. The planar shape of each sprocket hole 13X is formed in a substantially rectangular shape in plan view, for example. It should be noted that portions of the coil substrate 10 other than the individual region A1 (that is, the connecting portion 12 and the outer frame 13) are portions that are discarded when separated into individual pieces.

Next, the structure of each coil substrate 20 will be described with reference to FIGS.
As shown in FIG. 2, the coil board | substrate 20 provided in each separate area | region A1 is formed in the substantially rectangular shape in planar view, for example. The planar shape of the coil substrate 20 of this example is formed so that the corners of the rectangle are chamfered, and the projecting portions 21 and 22 projecting outward from the short side of the rectangle (the lower side in the figure and the upper side in the figure). Is formed. The planar shape of the coil substrate 20 is not limited to the shape shown in FIG. 2, and can be an arbitrary shape. Further, the planar shape of the coil substrate 20 can be set to an arbitrary size. For example, when the inductor 90 shown in FIG. 8B is manufactured using the coil substrate 20, the planar shape of the coil substrate 20 is substantially rectangular with the planar shape of the inductor 90 being about 1.6 mm × 0.8 mm. The size of the shape can be obtained. The thickness of the coil substrate 20 can be about 0.5 mm, for example.

  In addition, a through hole 20X is formed in a substantially central portion of the coil substrate 20 in plan view. The through hole 20X is formed so as to penetrate the coil substrate 20 in the thickness direction. The planar shape of the through hole 20X can be any shape and any size. For example, the planar shape of the through hole 20X can be a substantially elliptical shape or a substantially oval shape.

  An opening 20 </ b> Y that defines the coil substrate 20 is formed between the coil substrate 20 and the connecting portion 12. The opening 20Y is formed so as to penetrate the coil substrate 10 in the thickness direction.

  As shown in FIGS. 3 and 4, the coil substrate 20 is roughly composed of a substrate 30, a structure 41 stacked on the lower surface 30 </ b> A of the substrate 30, and structures 42 to 47 stacked on the upper surface 30 </ b> B of the substrate 30. And an insulating film 25 that covers the surface of the stacked body 23.

  The planar shape of the laminate 23 is formed in the same shape as the planar shape of the coil substrate 20. For example, the planar shape of the stacked body 23 is slightly smaller than the planar shape of the coil substrate 20 by the amount of the insulating film 25. In addition, a through hole 23 </ b> X that penetrates the stacked body 23 in the thickness direction is formed at a substantially central portion in plan view of the stacked body 23. The planar shape of the through hole 23X can be, for example, a substantially elliptical shape or a substantially oval shape, similarly to the planar shape of the through hole 20X.

  In the stacked body 23, the structure 42 is stacked on the upper surface 30B of the substrate 30 via the adhesive layer 71, and the structure 43 is stacked on the structure 42 via the adhesive layer 72. The structural body 44 is laminated via the adhesive layer 73. In the laminate 23, the structure 45 is laminated on the structure 44 via the adhesive layer 74, and the structure 46 is laminated on the structure 45 via the adhesive layer 75. The structure 47 is laminated via the adhesive layer 76.

  Here, as the adhesive layers 71 to 76, for example, a heat-resistant adhesive made of an insulating resin such as an epoxy-based adhesive can be used. The thickness of the adhesive layers 71 to 76 can be set to about 12 to 35 μm, for example.

  As shown in FIG. 4, the structure 41 includes an insulating layer 51, a wiring 61, a connecting portion 61A, and a metal layer 61D. The structure 42 includes an insulating layer 52, a wiring 62, and a metal layer. 62D, and the structure 43 includes an insulating layer 53, a wiring 63, and a metal layer 63D. The structure 44 includes an insulating layer 54, a wiring 64, and a metal layer 64D, and the structure 45 includes an insulating layer 55, a wiring 65, and a metal layer 65D. The structure 46 includes an insulating layer 56, a wiring 66, and a metal layer 66D, and the structure 47 includes an insulating layer 57, a wiring 67, a connection portion 67A, and a metal layer 67D. .

  Here, as a material of the insulating layers 51 to 57, for example, an insulating resin whose main component is an epoxy resin or the like can be used. As a material of the insulating layers 51 to 57, for example, an insulating resin whose main component is a thermosetting resin can be used. The insulating layers 51 to 57 may contain a filler such as silica or alumina, for example. In addition, the thermal expansion coefficient of the insulating layers 51-57 can be about 50-120 ppm / degrees C, for example. The thickness of the insulating layers 51-57 can be about 12-20 micrometers, for example.

  In addition, as a material of the lowermost wiring 61, the connection portion 61 </ b> A, and the metal layer 61 </ b> D, for example, a metal material having higher adhesion to the insulating film 25 than the substrate 30 is preferable. For example, copper (Cu) or a copper alloy can be used as the material for the wiring 61, the connecting portion 61A, and the metal layer 61D. Moreover, as a material of wiring 62-67, connection part 67A, and metal layers 62D-67D, copper and a copper alloy can be used, for example. The thicknesses of the wirings 61 to 67, the connecting portions 61A and 67A, and the metal layers 61D to 67D can be set to about 12 to 35 μm, for example.

  As the substrate 30, for example, a sheet-like insulating substrate can be used. As a material of the substrate 30, for example, an insulating resin that is adjusted so that the thermal expansion coefficient of the substrate 30 is lower than the thermal expansion coefficients of the insulating layers 51 to 57 is preferable. For example, the thermal expansion coefficient of the substrate 30 is set to about 10-25 ppm / ° C. Moreover, as a material of the board | substrate 30, it is preferable that it is a material excellent in heat resistance, for example. Furthermore, the material of the substrate 30 is preferably a material having a higher elastic modulus than the insulating layers 51 to 57. As such a board | substrate 30, resin films, such as a polyimide (PI) film and a polyethylene naphthalate (PEN) film, can be used, for example. As the substrate 30, a polyimide film having a low thermal expansion coefficient can be suitably used. The thickness of the substrate 30 is set to be thicker than the insulating layers 51 to 57, for example. For example, the thickness of the substrate 30 can be about 12 to 50 μm. Such a substrate 30 has higher rigidity than the insulating layers 51 to 57.

  The substrate 30 is formed with a through hole 30X that penetrates the substrate 30 in the thickness direction. The planar shape of the through hole 30X can be any shape and any size. For example, the planar shape of the through hole 30X can be a circular shape having a diameter of about 200 to 300 μm.

Next, the structure of the structure 41 will be described.
The insulating layer 51 is stacked on the lower surface 30 </ b> A of the substrate 30. The insulating layer 51 is formed with a through hole 51X that penetrates the insulating layer 51 in the thickness direction. The through hole 51X is formed to communicate with the through hole 30X of the substrate 30. That is, the through hole 51X is formed at a position overlapping the through hole 30X in plan view. The planar shape of the through hole 51X can be an arbitrary shape and an arbitrary size. For example, the planar shape of the through hole 51X can be a circular shape having a diameter of about 200 to 300 μm, similarly to the through hole 30X.

  A via wiring V1 is formed in a part of the through holes 30X and 51X that communicate with each other. The via wiring V1 of this example fills the through hole 51X and is formed in a part of the through hole 30X. The via wiring V1 of this example is formed from the upper surface of the wiring 61 to a midway position in the thickness direction of the through hole 30X. Therefore, the upper inner surface of the through hole 30X is exposed from the via wiring V1. The via wiring V1 is electrically connected to the wiring 61. The planar shape of the via wiring V1 can be an arbitrary shape and an arbitrary size. For example, the planar shape of the via wiring V1 can be a circular shape having a diameter of about 200 to 300 μm, like the through holes 30X and 51X.

  The wiring 61, the connecting portion 61A, and the metal layer 61D are stacked on the lower surface of the insulating layer 51. The wiring 61, the connecting portion 61A, and the metal layer 61D are formed in the lowermost layer of the stacked body 23. The width of the wiring 61 can be, for example, about 100 to 200 μm. The wiring 61 is a wiring that becomes a part of the coil, and is a first-layer wiring (about one turn) of the coil. In the following description, the direction along the spiral in the wiring that is a part of the coil is the longitudinal direction, and the width direction orthogonal to the longitudinal direction in plan view is the short direction.

  As shown in FIG. 5, the planar shape of the wiring 61 is formed in a substantially elliptical shape. However, in the wiring 61, a groove portion 61Y penetrating in the short direction (width direction) and the thickness direction of the wiring 61 is formed at a required portion, and the wiring 61 is formed in a non-annular shape.

  The connecting portion 61A is formed at one end of the wiring 61. 61 A of connection parts are formed in the position corresponding to the protrusion part 21 (refer FIG. 2) of the coil board | substrate 20. As shown in FIG. The connecting portion 61A is formed integrally with the wiring 61. In other words, the connecting portion 61A is a part of the wiring 61. As shown in FIG. 4, the connecting portion 61A is electrically connected to the metal layer 81 formed on the connecting portion 12 (see FIG. 3). The metal layer 81 is, for example, a power supply line for plating power supply. Note that, when the coil substrate 20 is separated into pieces, the connecting portion 61A is exposed from the side surface 20A (see FIG. 8A) of the coil substrate 20 after the separation. An inductor electrode is connected to the exposed connecting portion 61A.

  The metal layer 61 </ b> D is formed away from the wiring 61. Specifically, a groove 61Z is formed between the metal layer 61D and the wiring 61. That is, the metal layer 61D is electrically insulated from the wiring 61 by the groove 61Z. The metal layer 61D includes, for example, the shape of the metal layer (the wiring 61, the connection portion 61A, and the metal layer 61D) formed on the structure 41, and the metal layer (for example, formed on the structure 47) formed on another structure. This is a dummy pattern provided to reduce the difference from the shapes of the wiring 67, the connecting portion 67A and the metal layer 67D). The metal layer 61 </ b> D is formed at a position corresponding to the protrusion 22 (see FIG. 2) of the coil substrate 20. Specifically, the metal layer 61 </ b> D is provided at a position overlapping the connection portion 67 </ b> A formed in the uppermost structure 47 in plan view. The metal layer 61D is electrically isolated (floating) without being electrically connected to other wirings or metal layers when the coil substrate 20 is separated.

Next, the structure of the structure stacked on the upper surface 30B of the substrate 30 will be described.
An adhesive layer 71 is laminated on the upper surface 30 </ b> B of the substrate 30. The adhesive layer 71 is formed so as to cover the inner side surface of the through hole 30X exposed from the via wiring V1. That is, the adhesive layer 71 is formed on the upper surface 30B of the substrate 30 and is formed in the through hole 30X. The adhesive layer 71 is formed with a through hole 71X that penetrates the adhesive layer 71 in the thickness direction and exposes a part of the upper surface of the via wiring V1. The through hole 71X is formed so as to penetrate from the upper surface of the adhesive layer 71 to the lower surface of the adhesive layer 71 formed in the through hole 30X. That is, the through hole 71X is formed so as to communicate with a part of the through hole 30X, and a part of the through hole 71X is further formed in the through hole 30X. Here, the planar shape of the through hole 71X can be an arbitrary shape and an arbitrary size. However, the planar shape of the through hole 71X is smaller than the planar shape of the through hole 30X. For example, the planar shape of the through hole 71X can be a circular shape having a diameter of about 140 to 180 μm, like the through hole 71X.

  The structure 42 is stacked on the upper surface 30 </ b> B of the substrate 30 with the adhesive layer 71 interposed therebetween. The wiring 62 and the metal layer 62D are stacked on the adhesive layer 71. As shown in FIG. 5, the wiring 62 is formed in a substantially U shape in plan view. The wiring 62 is a wiring that becomes a part of the coil, and is a wiring in the second layer of the coil (about 3/4 of one turn).

  In the wiring 62, a through hole 62 </ b> X that penetrates the wiring 62 in the thickness direction and communicates with the through hole 71 </ b> X of the adhesive layer 71 is formed. The planar shape of the through-hole 62X can be an arbitrary shape and an arbitrary size. However, the planar shape of the through hole 62X is smaller than the planar shape of the through hole 30X. For example, the planar shape of the through hole 62X can be a circular shape having a diameter of about 140 to 180 μm.

  The metal layer 62D is, for example, a dummy pattern similar to the metal layer 61D. A part of the metal layer 62D is formed away from the wiring 62 by the groove 62Y. The metal layer 62D is formed at a position overlapping a part of the wiring 61 in plan view. A part of the metal layer 62D is formed away from the wiring 62 by the groove 62Z. The metal layer 62D is formed at a position overlapping with the connecting portion 61A and the connecting portion 67A (see FIG. 6) in plan view.

  As shown in FIG. 4, part of the side surfaces of the wiring 62 and the metal layer 62 </ b> D are covered with an adhesive layer 71. For example, the adhesive layer 71 of this example is formed so as to fill the grooves 62Y and 62Z shown in FIG.

  The insulating layer 52 is laminated on the adhesive layer 71 so as to cover the upper surfaces of the wiring 62 and the metal layer 62D. The insulating layer 52 has a through hole 52X that penetrates the insulating layer 52 in the thickness direction and communicates with the through holes 62X and 71X. The through hole 52X is formed so as to expose the upper surface of the wiring 62 positioned around the through hole 62X. That is, the planar shape of the through hole 52X is larger than the planar shape of the through holes 62X and 71X. For example, the planar shape of the through hole 52X can be a circular shape having a diameter of about 200 to 300 μm.

  A via wiring V2 is formed in the communicating through holes 52X, 62X, 71X. For example, the via wiring V2 is formed on the via wiring V1 exposed from the through hole 71X, and is formed to fill all the through holes 52X, 62X, and 71X. For this reason, the via wiring V2 is formed in a substantially T shape in a sectional view. The via wiring V2 is connected to the wiring 62 constituting the inner side surface of the through hole 62X and is connected to the upper surface of the wiring 62 positioned around the through hole 62X. The second-layer wiring 62 is connected in series with the first-layer wiring 61 through a through electrode composed of via wirings V1 and V2. Here, the through electrode composed of the via wirings V <b> 1 and V <b> 2 is formed through the insulating layer 51, the substrate 30, the adhesive layer 71, the wiring 62, and the insulating layer 52.

  The insulating layer 52 has a through hole 52 </ b> Y that penetrates the insulating layer 52 in the thickness direction and exposes a part of the upper surface of the wiring 62. The planar shape of the through hole 52Y can be an arbitrary shape and an arbitrary size. For example, the planar shape of the through hole 52Y can be a circular shape having a diameter of about 200 to 300 μm.

An adhesive layer 72 is laminated on the insulating layer 52, and a structure 43 is laminated on the adhesive layer 72. The wiring 63 and the metal layer 63D are stacked on the adhesive layer 72.
As shown in FIG. 5, the wiring 63 is formed in a substantially elliptical shape in plan view. However, in the wiring 63, a groove portion 63Y penetrating in the short side direction (width direction) and the thickness direction of the wiring 63 is formed at a required location, and the wiring 63 is formed in a non-annular shape. The wiring 63 is a wiring that becomes a part of the coil, and is a third-layer wiring (about one turn) of the coil.

  The metal layer 63D is a dummy pattern similar to the metal layer 61D, for example. For example, the metal layer 63D is formed away from the wiring 63 by the groove 63Z. The metal layer 63D is formed, for example, at a position overlapping with the connecting portion 61A or the connecting portion 67A (see FIG. 6) in plan view.

  As shown in FIG. 4, the adhesive layer 72 is formed so that a part thereof is formed in the through hole 52Y and covers the inner surface of the through hole 52Y. The adhesive layer 72 is formed so as to cover part of the side surfaces of the wiring 63 and the metal layer 63D. For example, the adhesive layer 72 is formed to fill the grooves 63Y and 63Z shown in FIG.

  In the adhesive layer 72, a through hole 72 </ b> X that penetrates the adhesive layer 72 in the thickness direction and exposes a part of the upper surface of the wiring 62 is formed. The through hole 72X is formed so as to penetrate from the upper surface of the adhesive layer 72 to the lower surface of the adhesive layer 72 formed in the through hole 52Y. That is, a part of the through hole 72X is formed in the through hole 52Y.

  The wiring 63 is formed with a through hole 63X that penetrates the wiring 63 in the thickness direction and communicates with the through hole 72X. Here, the planar shapes of the through holes 63X and 72X can be any shape and any size. However, the planar shape of the through holes 63X and 72X is smaller than the planar shape of the through hole 52Y. For example, the planar shape of the through holes 63X and 72X can be a circular shape having a diameter of about 140 to 180 μm.

  The insulating layer 53 is laminated on the adhesive layer 72 so as to cover the upper surfaces of the wiring 63 and the metal layer 63D. The insulating layer 53 is formed with a through hole 53X that penetrates the insulating layer 53 in the thickness direction and communicates with the through holes 63X and 72X. The through hole 53X is formed so as to expose the upper surface of the wiring 63 positioned around the through hole 63X. That is, the planar shape of the through hole 53X is larger than the planar shape of the through holes 63X and 72X. For example, the planar shape of the through hole 53X can be a circular shape having a diameter of about 200 to 300 μm.

  A via wiring V3 is formed in the through holes 53X, 63X, and 72X that communicate with each other. The via wiring V3 is formed on the wiring 62 exposed from the through hole 72X, for example, and is formed so as to fill all the through holes 53X, 63X, and 72X. For this reason, the via wiring V3 is formed in a substantially T shape in a sectional view. The via wiring V3 is connected to the wiring 63 constituting the inner surface of the through hole 63X and is connected to the upper surface of the wiring 63 located around the through hole 63X. The third-layer wiring 63 is connected in series with the second-layer wiring 62 via the via wiring V3. Here, the via wiring V3 includes the insulating layer 52 of the lower structure 42, the adhesive layer 72, and the wiring 63 and the insulating layer 53 of the upper structure 43 among the structures 42 and 43 that are vertically adjacent to each other. It is formed through.

  As shown in FIG. 5, the insulating layer 53 is formed with a through hole 53 </ b> Y that penetrates the insulating layer 53 in the thickness direction and exposes a part of the upper surface of the wiring 63. The planar shape of the through hole 53Y can be an arbitrary shape and an arbitrary size. For example, the planar shape of the through hole 53Y can be a circular shape having a diameter of about 200 to 300 μm.

  An adhesive layer 73 is laminated on the insulating layer 53, and the structure 44 is laminated on the adhesive layer 73. The wiring 64 and the metal layer 64 </ b> D are stacked on the adhesive layer 73. The insulating layer 54 is laminated on the adhesive layer 73 so as to cover the upper surfaces of the wiring 64 and the metal layer 64D. Note that the structure 44 is the same structure as the structure 42, and has a structure corresponding to, for example, a structure obtained by rotating the structure 42 by 180 degrees about the normal line of the upper surface of the insulating layer 52.

  The wiring 64 is formed in a substantially U shape in plan view. The wiring 64 is a wiring that becomes a part of the coil, and is a wiring on the fourth layer of the coil (about 3/4 of one turn). The metal layer 64D is a dummy pattern similar to the metal layer 61D, for example. The metal layer 64D is formed to be separated from the wiring 64 by, for example, the groove part 64Y or the groove part 64Z.

  Similar to the adhesive layer 72, the adhesive layer 73 is formed so as to cover the inner surface of the through hole 53Y. For example, the adhesive layer 73 is formed so as to cover part of the side surfaces of the wiring 64 and the metal layer 64D, and is formed so as to fill the grooves 64Y and 64Z. In the adhesive layer 73, a through hole 73 </ b> X that penetrates the adhesive layer 73 in the thickness direction and exposes a part of the upper surface of the wiring 63 is formed. The through hole 73X is formed at a position overlapping the through hole 53Y in plan view, and a part of the through hole 73X is formed in the through hole 53Y.

  The wiring 64 has a through hole 64X that penetrates the wiring 64 in the thickness direction and communicates with the through hole 73X. The planar shape of the through holes 64X and 73X is smaller than the planar shape of the through hole 53Y.

  The insulating layer 54 is formed with a through hole 54X that penetrates the insulating layer 54 in the thickness direction and communicates with the through holes 64X and 73X. The planar shape of the through hole 54X is larger than the planar shape of the through holes 64X and 73X. The insulating layer 54 has a through hole 54Y that penetrates the insulating layer 54 in the thickness direction and exposes a part of the upper surface of the wiring 64.

  A via wiring V4 (see FIG. 7) is formed in the communicating through holes 54X, 64X, and 73X. For example, the via wiring V4 is formed on the wiring 63 exposed from the through hole 73X, and is formed so as to fill all the through holes 54X, 64X, and 73X. For this reason, the via wiring V4 includes the insulating layer 53 of the lower structure 43, the adhesive layer 73, and the wiring 64 and the insulating layer 54 of the upper structure 44 among the structures 43 and 44 that are vertically adjacent to each other. It is formed through. The fourth-layer wiring 64 is connected in series with the third-layer wiring 63 through the via wiring V4.

  As shown in FIG. 4, an adhesive layer 74 is laminated on the insulating layer 54, and a structure 45 is laminated on the adhesive layer 74. The wiring 65 and the metal layer 65 </ b> D are stacked on the adhesive layer 74. The insulating layer 55 is laminated on the adhesive layer 74 so as to cover the upper surfaces of the wiring 65 and the metal layer 65D. As shown in FIGS. 5 and 6, the structure 45 has the same structure as the structure 43 and corresponds to a structure in which the structure 43 is rotated 180 degrees about the normal line of the upper surface of the insulating layer 53. It has the structure to do.

  As shown in FIG. 6, the wiring 65 is formed in a substantially elliptical shape in plan view. However, in the wiring 65, a groove portion 65Y penetrating in the short direction and the thickness direction of the wiring 65 is formed at a required location, and the wiring 65 is formed in a non-annular shape. The wiring 65 is a wiring that becomes a part of the coil, and is a fifth-layer wiring (about one turn) of the coil. The metal layer 65D is, for example, a dummy pattern similar to the metal layer 61D (see FIG. 5), and is formed away from the wiring 65 by the groove 65Z.

  Similar to the adhesive layer 72 (see FIG. 4), the adhesive layer 74 is formed to cover the inner surface of the through hole 54Y. For example, the adhesive layer 74 is formed so as to cover part of the side surfaces of the wiring 65 and the metal layer 65D, and is formed so as to fill the groove portions 65Y and 65Z. The adhesive layer 74 has a through hole 74X that penetrates the adhesive layer 74 in the thickness direction and exposes a part of the upper surface of the wiring 64 (see FIG. 5). The through hole 74X is formed at a position overlapping the through hole 54Y in plan view, and a part of the through hole 74X is formed in the through hole 54Y.

  The wiring 65 is formed with a through hole 65X that penetrates the wiring 65 in the thickness direction and communicates with the through hole 74X. The planar shapes of the through holes 65X and 74X are smaller than the planar shape of the through hole 54Y.

  The insulating layer 55 is formed with a through hole 55X that penetrates the insulating layer 55 in the thickness direction and communicates with the through holes 65X and 74X. The planar shape of the through hole 55X is larger than the planar shape of the through holes 65X and 74X. The insulating layer 55 is formed with a through hole 55 </ b> Y that penetrates the insulating layer 55 in the thickness direction and exposes a part of the upper surface of the wiring 65.

  A via wiring V5 (see FIG. 7) is formed in the through holes 55X, 65X, and 74X that communicate with each other. The via wiring V5 is formed, for example, on the wiring 64 (see FIG. 5) exposed from the through hole 74X, and is formed so as to fill all the through holes 55X, 65X, and 74X. Therefore, the via wiring V5 includes the insulating layer 54 of the lower structure 44, the adhesive layer 74, and the wiring 65 and the insulating layer 55 of the upper structure 45 among the vertically adjacent structures 44 and 45. It is formed through. The fifth-layer wiring 65 is connected in series with the fourth-layer wiring 64 via the via wiring V5.

  An adhesive layer 75 is stacked on the insulating layer 55, and the structure 46 is stacked on the adhesive layer 75. The wiring 66 and the metal layer 66 </ b> D are stacked on the adhesive layer 75. The insulating layer 56 is laminated on the adhesive layer 75 so as to cover the upper surfaces of the wiring 66 and the metal layer 66D. The structure 46 has the same structure as the structure 42 (see FIG. 5).

  As shown in FIG. 6, the wiring 66 is formed in a substantially U shape in plan view. The wiring 66 is a wiring that becomes a part of the coil, and is the wiring on the sixth layer of the coil (about 3/4 of one turn). The metal layer 66D is, for example, a dummy pattern similar to the metal layer 61D (see FIG. 5). For example, the metal layer 66D is formed to be separated from the wiring 66 by the groove 66Y or the groove 66Z.

  As shown in FIG. 4, the adhesive layer 75 is formed so as to cover the inner surface of the through hole 55Y. For example, the adhesive layer 75 is formed so as to cover part of the side surfaces of the wiring 66 and the metal layer 66D, and is formed so as to fill the grooves 66Y and 66Z (see FIG. 6). In the adhesive layer 75, a through hole 75 </ b> X that penetrates the adhesive layer 75 in the thickness direction and exposes a part of the upper surface of the wiring 65 is formed. The through hole 75X is formed at a position overlapping the through hole 55Y in plan view, and a part thereof is formed in the through hole 55Y.

  The wiring 66 is formed with a through hole 66X that penetrates the wiring 66 in the thickness direction and communicates with the through hole 75X. The planar shape of the through holes 66X and 75X is smaller than the planar shape of the through hole 55Y.

  The insulating layer 56 is formed with a through hole 56X that penetrates the insulating layer 56 in the thickness direction and communicates with the through holes 66X and 75X. The planar shape of the through hole 56X is larger than the planar shape of the through holes 66X and 75X. The insulating layer 56 is formed with a through hole 56 </ b> Y that penetrates the insulating layer 56 in the thickness direction and exposes a part of the upper surface of the wiring 66.

  A via wiring V6 is formed in the through holes 56X, 66X, and 75X that communicate with each other. The via wiring V6 is formed, for example, on the wiring 65 exposed from the through hole 75X, and is formed so as to fill all the through holes 56X, 66X, and 75X. Therefore, the via wiring V6 includes the insulating layer 55 of the lower structure 45, the adhesive layer 75, and the wiring 66 and the insulating layer 56 of the upper structure 46 among the structures 45 and 46 that are vertically adjacent to each other. It is formed through. The sixth-layer wiring 66 is connected in series with the fifth-layer wiring 65 through the via wiring V6.

  An adhesive layer 76 is laminated on the insulating layer 56, and a structure 47 is laminated on the adhesive layer 76. The wiring 67, the connecting portion 67A, and the metal layer 67D are stacked on the adhesive layer 76. The insulating layer 57 is laminated on the adhesive layer 76 so as to cover the upper surfaces of the wiring 67, the connecting portion 67A, and the metal layer 67D.

  As shown in FIG. 6, the planar shape of the wiring 67 is substantially elliptical. However, in the wiring 67, a groove portion 67Y penetrating in the short direction (width direction) and the thickness direction of the wiring 67 is formed at a required place, and the wiring 67 is formed in a non-annular shape. The wiring 67 is a wiring that is a part of the coil, and is a seventh-layer wiring (about one turn) of the coil.

  The connecting portion 67A is formed at one end of the wiring 67. The connecting portion 67A is formed at a position corresponding to the protruding portion 22 (see FIG. 2) of the coil substrate 20. The connecting portion 67A is formed integrally with the wiring 67. In other words, the connecting portion 67 </ b> A is a part of the wiring 67. Note that, when the coil substrate 20 is separated into pieces, the connection portion 67A is exposed from the side surface 20B (see FIG. 8A) of the coil substrate 20 after the separation. An inductor electrode is connected to the exposed connection portion 67A. The metal layer 67D is, for example, a dummy pattern similar to the metal layer 61D (see FIG. 5), and is formed apart from the wiring 67 by the groove 67Z.

  As shown in FIG. 4, the adhesive layer 76 is formed so as to cover the inner surface of the through hole 56Y. For example, the adhesive layer 76 is formed so as to cover part of the side surfaces of the wiring 67, the connecting portion 67A, and the metal layer 67D, and is formed so as to fill the groove portions 67Y and 67Z (see FIG. 6). In the adhesive layer 76, a through hole 76 </ b> X that penetrates the adhesive layer 76 in the thickness direction and exposes a part of the upper surface of the wiring 66 is formed. The through hole 76X is formed at a position overlapping the through hole 56Y in plan view, and a part of the through hole 76X is formed in the through hole 56Y.

  The wiring 67 is formed with a through hole 67X that penetrates the wiring 67 in the thickness direction and communicates with the through hole 76X. The planar shape of the through holes 67X and 76X is smaller than the planar shape of the through hole 56Y.

  The insulating layer 57 is formed with a through hole 57X that penetrates the insulating layer 57 in the thickness direction and communicates with the through holes 67X and 76X. The planar shape of the through hole 57X is larger than the planar shape of the through holes 67X and 76X.

  A via wiring V7 is formed in the communicating through holes 57X, 67X, and 76X. For example, the via wiring V7 is formed on the wiring 66 exposed from the through hole 76X, and is formed so as to fill all the through holes 57X, 67X, and 76X. The seventh-layer wiring 67 is connected in series with the sixth-layer wiring 66 through the via wiring V7. Here, the via wiring V7 includes the insulating layer 56 of the lower structure 46, the adhesive layer 76, the wiring 67 and the insulating layer 57 of the upper structure 47 among the structures 46 and 47 that are vertically adjacent to each other. It is formed through.

  As shown in FIG. 6, the insulating layer 57 is formed with a through hole 57 </ b> Y that penetrates the insulating layer 57 in the thickness direction and exposes a part of the upper surface of the wiring 67. The through hole 57Y is filled with a via wiring V8 (see FIG. 7). The wiring 67 is electrically connected to the via wiring V8.

  In addition, the planar shape of the through holes 64X to 67X and 73X to 76X can be an arbitrary shape and an arbitrary size. For example, the planar shape of the through holes 64X to 67X and 73X to 76X can be a circular shape having a diameter of about 140 to 180 μm. The planar shapes of the through holes 54X to 57X and 54Y to 57Y that are larger than the planar shapes of the through holes 64X to 67X and 73X to 76X can be, for example, about 200 to 300 μm in diameter. Moreover, as a material of the via wirings V1 to V8 shown in FIG. 7, for example, copper or a copper alloy can be used.

  In this way, in the coil substrate 20, as shown in FIG. 7, the upper and lower adjacent wirings 61 to 67 are connected in series via the via wirings V1 to V8, and the spiral shape extends from the connecting portion 61A to the connecting portion 67A. The coil is formed. That is, the spiral coil is provided with a connecting portion 61A at one end and a connecting portion 67A at the other end.

  As shown in FIG. 2, a through hole 23 </ b> X that penetrates the laminated body 23 in the thickness direction is formed at a substantially central portion in plan view of the laminated body 23 described above. As shown in FIGS. 3 and 4, the side surfaces of the wirings 61 to 67 are exposed on the inner wall surface of the through hole 23 </ b> X.

  The insulating film 25 is formed so as to cover the entire surface of the stacked body 23. Specifically, as illustrated in FIG. 4, the insulating film 25 includes the outer wall surface (side wall) of the stacked body 23, the lower and side surfaces of the lowermost wiring 61, the upper surface of the uppermost insulating layer 57, and the via wiring V <b> 7. It is formed so as to continuously cover the upper surface, the upper surface of the via wiring V8 (see FIG. 7), and the inner wall surface of the through hole 23X. The insulating film 25 covers the side surfaces of the wirings 61 to 67 exposed on the inner wall surface of the through hole 23X. The insulating film 25 covers the side surfaces of the wiring 61 exposed in the groove portions 61Y and 61Z. Further, for example, as shown in FIG. 2, the insulating film 25 covering the upper surface and the lower surface of the multilayer body 23 covers the multilayer body 23 at least to a position overlapping with the connection portion 67A in plan view, and also includes a metal layer 67D. And the laminated body 23 is formed so as to cover up to a position overlapping in plan view. The insulating film 25 in this example is formed so as to cover a part of the connecting portion 12. However, most of the connecting portion 12 and the entire surface of the outer frame 13 are exposed from the insulating film 25. In FIG. 2, illustration of the insulating layer 57 is omitted, and illustration of the insulating film 25 on the stacked body 23 is omitted.

  Here, as a material of the insulating film 25, for example, an insulating resin such as an epoxy resin or an acrylic resin can be used. The insulating film 25 may contain, for example, a filler such as silica or alumina. The thickness of the insulating film 25 can be, for example, about 10 to 50 μm.

The coil substrate 20 described above is connected to the adjacent coil substrate 20 via the connecting portion 12. Below, the structure of the connection part 12 is demonstrated easily.
As shown in FIG. 3, an insulating layer 51 and a metal layer 81 are sequentially stacked on the lower surface 30 </ b> A of the substrate 30 constituting the connecting portion 12. Further, an adhesive layer 71, a metal layer 82, an insulating layer 52, an adhesive layer 72, a metal layer 83, an insulating layer 53, an adhesive layer 73, a metal layer 84, and an insulating layer are provided on the upper surface 30 </ b> B of the substrate 30 constituting the connecting portion 12. 54, an adhesive layer 74, a metal layer 85, an insulating layer 55, an adhesive layer 75, a metal layer 86, an insulating layer 56, an adhesive layer 76, a metal layer 87, and an insulating layer 57 are sequentially laminated. As shown in FIG. 4, the metal layer 81 is electrically connected to the metal layer 61D and the connecting portion 61A, the metal layer 82 is electrically connected to the metal layer 62D, and the metal layer 83 is electrically connected to the metal layer 63D. The metal layer 84 is electrically connected to the metal layer 64D. The metal layer 85 is electrically connected to the metal layer 65D, the metal layer 86 is electrically connected to the metal layer 66D, and the metal layer 87 is electrically connected to the metal layer 67D and the connection portion 67A. In addition, as a material of the metal layers 81-87, copper and a copper alloy can be used, for example.

  As shown in FIG. 2, recognition marks 12 </ b> X are formed on the connecting portion 12 at required locations. The recognition mark 12X is formed so as to penetrate the connecting portion 12 in the thickness direction. The recognition mark 12X is used as an alignment mark, for example. The planar shape of the recognition mark 12X can be any shape and any size. For example, the planar shape of the recognition mark 12X can be a substantially circular shape.

Next, the structure of the outer frame 13 will be briefly described.
As shown in FIG. 3, the outer frame 13 is configured only by the substrate 30. For example, the outer frame 13 is formed in both end regions of the substrate 30. For example, the outer frame 13 is formed by extending the substrate 30 constituting the individual region A1 and the connecting portion 12 to the outside of the connecting portion 12. That is, only the substrate 30 is formed so as to protrude outward from the connecting portion 12. And the sprocket hole 13X mentioned above is formed in the board | substrate 30 which comprises the outer frame 13. As shown in FIG. That is, the sprocket hole 13X is formed so as to penetrate the substrate 30 in the thickness direction.

  8A shows the coil substrate after the insulating film 25, the substrate 30, the insulating layers 51 to 57, the metal layers 61D to 67D, and the like are cut and separated into pieces at the cutting position indicated by the broken line in FIG. 20 is shown. In the coil substrate 20 after separation, the connection portion 61A is exposed on one side surface 20A, and the connection portion 67A is exposed on the side surface 20B facing the side surface 20A. In addition, the coil board | substrate 20 after this singulation can be used in the state upside down, or can be arrange | positioned at arbitrary angles.

Next, the structure of the inductor 90 having the coil substrate 20 will be described with reference to FIG.
The inductor 90 is a chip inductor in which the coil substrate 20 is sealed with a sealing resin 91 and electrodes 92 and 93 are formed. The planar shape of the inductor 90 can be a substantially rectangular shape of about 1.6 mm × 0.8 mm, for example. The thickness of the inductor 90 can be about 1.0 mm, for example. The inductor 90 can be used, for example, in a voltage conversion circuit of a small electronic device.

  The sealing resin 91 seals a portion of the coil substrate 20 excluding the side surface 20A and the side surface 20B. That is, the sealing resin 91 is formed so as to entirely cover the coil substrate 20 (the laminated body 23 and the insulating film 25) except for the side surfaces 20A and 20B from which the connection portions 61A and 67A are exposed. For example, the sealing resin 91 is formed so as to cover the upper surface and the lower surface of the insulating film 25 and to cover the side surface of the insulating film 25 that covers the inner wall surface of the through hole 23X. That is, the sealing resin 91 is also formed in the through hole 20X. The sealing resin 91 of this example is filled in the through hole 20X so as to cover the entire inner wall surface of the through hole 20X. As a material of the sealing resin 91, for example, an insulating resin (for example, epoxy resin) containing a magnetic filler such as ferrite or metal magnetic powder can be used. As a material of the metal magnetic powder, for example, iron or an iron-based alloy can be used. The magnetic body has a function of increasing the inductance of the inductor 90.

  Here, in the inductor 90, a through hole 20X is formed in a substantially central portion of the coil substrate 20, and the through hole 20X is also filled with an insulating resin containing a magnetic material. Thereby, compared with the case where the through-hole 20X is not formed, a larger portion around the coil substrate 20 can be sealed with the sealing resin 91 containing the magnetic material. For this reason, the inductance of the inductor 90 can be improved.

  Note that a core of magnetic material such as ferrite may be disposed in the through hole 20X, and the sealing resin 91 may be formed so as to seal the coil substrate 20 including the core. At this time, the shape of the core can be, for example, a cylindrical shape or a rectangular parallelepiped shape.

  The electrode 92 is formed outside the sealing resin 91 and connected to a part of the connecting portion 61A. The electrode 92 is formed so as to continuously cover the side surface 20A of the coil substrate 20, the side surface of the sealing resin 91 formed on the side surface 20A, and part of the upper surface and the lower surface of the sealing resin 91. ing. The inner wall surface of the electrode 92 is in contact with the side surface of the connecting portion 61 </ b> A exposed from the side surface 20 </ b> A of the coil substrate 20. Thereby, the electrode 92 and the connection part 61A are electrically connected.

  The electrode 93 is formed outside the sealing resin 91 and is connected to a part of the connecting portion 67A. The electrode 93 is formed so as to continuously cover the side surface 20B of the coil substrate 20, the side surface of the sealing resin 91 formed on the side surface 20B, and part of the upper surface and the lower surface of the sealing resin 91. ing. The inner wall surface of the electrode 93 is in contact with the side surface of the connecting portion 67 </ b> A exposed from the side surface 20 </ b> B of the coil substrate 20. Thereby, the electrode 93 and the connection part 67A are electrically connected.

As a material of the electrodes 92 and 93, for example, copper or a copper alloy can be used. The electrodes 92 and 93 may have a structure in which a plurality of metal layers are stacked.
The electrodes 92 and 93 are also connected to the metal layers 61D to 67D which are dummy patterns. However, the metal layers 61D to 67D are not electrically connected to the wirings 61 to 67 and other metal layers, and are electrically isolated. For this reason, the wirings 61 to 67 and the like are not short-circuited due to the metal layers 61D to 67D and the electrodes 92 and 93.

Next, a method for manufacturing the coil substrate 10 will be described.
First, in the step shown in FIG. 9, a substrate 100 is prepared. The substrate 100 has a structure in which a plurality of substrates 30 each having a block 11 and an outer frame 13 are connected. Each block 11 is provided with a plurality of individual areas A1, and a connecting portion 12 is provided so as to surround the plurality of individual areas A1. Further, the outer frame 13 is provided in both end regions in the short direction of the substrate 100 or in the longitudinal direction of each substrate 30 (that is, the vertical direction in the drawing). In the outer frame 13, sprocket holes 13 </ b> X penetrating the substrate 30 in the thickness direction are continuously formed at substantially constant intervals along the longitudinal direction of the substrate 100 (that is, the left-right direction in the drawing). The sprocket hole 13X can be formed using, for example, a press processing method or a laser processing method. The sprocket hole 13X is a through-hole for pitch-feeding the substrate 100 by meshing with a pin of a sprocket driven by a motor or the like when the substrate 100 is mounted on various manufacturing apparatuses or the like in the process of manufacturing the coil substrate 10. It is a hole (that is, a through-hole for conveyance). For this reason, the interval between adjacent sprocket holes 13X is set corresponding to the manufacturing apparatus to which the substrate 100 is mounted in the manufacturing process.

  As the substrate 100, a reel-like (tape-like) flexible insulating resin film can be used. The width of the substrate 100 (the length in the direction orthogonal to the arrangement direction of the sprocket holes 13X in plan view) is determined so as to correspond to the manufacturing apparatus on which the substrate 100 is mounted. For example, the width of the substrate 100 can be about 40 to 90 mm. Further, the length of the substrate 100 in the longitudinal direction can be arbitrarily determined. In the example shown in FIG. 9, the individual areas A1 provided on each substrate 30 are 6 rows and 2 columns. However, the individual areas A1 can be made to be several hundred columns, for example, by lengthening each substrate 30. The cutting position A2 is a cutting position for cutting the reel-like substrate 100 into a sheet shape in a subsequent process.

In the following, for the sake of convenience, description will be given focusing on one individual region A1 (region indicated by a one-dot chain line in FIG. 9) of one substrate 30.
Next, in the steps shown in FIGS. 10A and 10B, a semi-cured insulating layer 51 is laminated on the lower surface 30A of the substrate 30 located in the region excluding the outer frame 13 (that is, the block 11). To do. The insulating layer 51 is formed so as to cover the entire lower surface 30A of the substrate 30 located in the block 11, for example. For example, when a film-like insulating resin is used as the material of the insulating layer 51, the film-like insulating resin is laminated on the lower surface 30 </ b> A of the substrate 30. However, in this step, the film-like insulating resin is not thermally cured, and is in a B-stage state (semi-cured state). In addition, by laminating the insulating layer 51 in a vacuum atmosphere, the inclusion of voids in the insulating layer 51 can be suppressed. On the other hand, when a liquid or paste insulating resin is used as the material of the insulating layer 51, the liquid or paste insulating resin is applied to the lower surface 30A of the substrate 30 by, for example, a printing method or a spin coating method. Thereafter, the applied liquid or paste-like insulating resin is pre-baked to obtain a B-stage state.

  Subsequently, the through hole 30X is formed in the substrate 30 in each individual area A1, and the through hole 51X communicating with the through hole 30X is formed in the insulating layer 51 in each individual area A1. These through holes 30X and 51X can be formed by, for example, a press processing method or a laser processing method. In this step, the sprocket hole 13X described above may be formed. That is, the through holes 30X and 51X and the sprocket hole 13X may be formed in the same process.

  Next, in the step shown in FIG. 11A, the metal foil 161 is laminated on the lower surface of the semi-cured insulating layer 51. The metal foil 161 is formed so as to cover the entire lower surface of the insulating layer 51, for example. For example, the metal foil 161 is laminated on the lower surface of the semi-cured insulating layer 51 by thermocompression bonding. Thereafter, the semi-cured insulating layer 51 is cured by curing (thermosetting treatment) in a temperature atmosphere of about 150 ° C. At this time, as the insulating layer 51 is cured, the substrate 30 is bonded to the upper surface of the insulating layer 51 and the metal foil 161 is bonded to the lower surface of the insulating layer 51. That is, the insulating layer 51 in this step functions as an adhesive that bonds the substrate 30 and the metal foil 161. Note that the metal foil 161 is a portion that is patterned in a later step to become the wiring 61, the connection portion 61A, and the like, and for example, a copper foil can be used.

  Next, the via wiring V1 is formed on the metal foil 161 exposed at the bottom of the through hole 51X. In this step, the via wiring V1 fills the inside of the through hole 51X and is formed in a part of the through hole 30X. The via wiring V1 can be formed, for example, by depositing a plating film in the through holes 30X and 51X by an electrolytic plating method using the metal foil 161 as a power feeding layer. The via wiring V1 may be formed by filling a metal paste such as copper on the metal foil 161 exposed at the bottom of the through hole 51X.

  Next, the metal foil 161 is patterned, and as shown in FIGS. 11B and 11C, a metal layer 61E is formed on the lower surface of the insulating layer 51 located in each individual region A1, and the metal layer 61E is formed. The connection part 61A is formed at one end of the metal layer 61D and the metal layer 61D as a dummy pattern is formed. Thereby, the structure 41 having the insulating layer 51, the metal layer 61E, and the connection portion 61A is laminated on the lower surface 30A of the substrate 30. For example, the metal layer 61E formed in this step has a larger planar shape than the wiring 61 shown in FIG. 7 (that is, the wiring 61 having a shape constituting a part of the spiral coil). And this metal layer 61E is a site | part used as the 1st layer wiring 61 (about 1 volume) finally shape | molded by die cutting etc. and used as a part of coil. In this step, as shown in FIG. 11C, a metal layer 81 connected to the connecting portion 61A and the metal layer 61D is formed on the lower surface of the insulating layer 51 located in the connecting portion 12. In other words, in this step, the metal foil 161 shown in FIG. 11A is patterned to form the opening 201Y and the grooves 61Y and 61Z. The groove 61Y is provided to facilitate the formation of a spiral shape constituting the coil when the coil substrate is formed in a subsequent process. The metal layer 81 formed in this step is used as a power feeding layer in electrolytic plating in a subsequent step. The formation of the metal layer 81 may be omitted when electrolytic plating is not performed in a subsequent process. Moreover, in FIG.11 (c), the insulating layer 51 exposed from the opening part 201Y and the groove parts 61Y and 61Z is shown with the satin pattern.

  The patterning of the metal foil 161 can be performed using various wiring forming methods such as a subtractive method. For example, patterning can be performed by applying a photosensitive resist on the lower surface of the metal foil 161, exposing and developing a predetermined region to form an opening in the resist, and removing the metal foil 161 exposed in the opening by etching. . The metal layer 61E, the connecting portion 61A, the metal layer 61D, and the metal layer 81 are integrally formed.

  Next, in the step shown in FIG. 12, first, a support film 102 having the same structure as the substrate 100 is prepared. That is, as shown in FIG. 12A and FIG. 12C, it has a block 11 provided with a plurality of individual regions A1 and an outer frame 13 formed so as to protrude outside the block 11. A support film 102 is prepared. As the support film 102, for example, a reel-like (tape-like) flexible insulating resin film can be used. As the support film 102, for example, polyphenylene sulfide (PPS), a polyimide film, or a polyethylene naphthalate film can be used. The thickness of the support film 102 can be about 12-50 micrometers, for example.

  Subsequently, the structure 42 having the insulating layer 52 and the metal layer 62E is laminated on the lower surface 102A of the support film 102 in the same manner as in the steps shown in FIGS. Specifically, after the sprocket holes 102X are formed in the support film 102 positioned on the outer frame 13, the semi-cured insulating layer 52 is laminated on the lower surface 102A of the support film 102 excluding the outer frame 13. Next, as shown in FIG. 12B, through holes 52X and 52Y that penetrate the support film 102 and the insulating layer 52 in the thickness direction are formed by a press working method or a laser working method. Thereafter, a metal foil is laminated on the lower surface of the semi-cured insulating layer 52, and the metal foil is patterned by a subtractive method or the like. As a result, as shown in FIGS. 12B and 12C, the metal layer 62E is formed on the lower surface of the insulating layer 52 located in each individual region A1, and the metal layer 62D which is a dummy pattern is formed. To do. Further, as shown in FIG. 12C, a metal layer 82 connected to a part of the metal layer 62 </ b> D is formed on the lower surface of the insulating layer 52 located in the connecting portion 12. In other words, in this step, the metal foil laminated on the lower surface of the insulating layer 52 is patterned to form the opening 202Y and the grooves 62Y and 62Z. Here, the metal layer 62E formed in this step has a larger planar shape than the wiring 62 shown in FIG. 7, for example. The metal layer 62E is a portion that is finally formed (die-cut or the like) and becomes a second-layer wiring 62 (about 3/4 of one turn) that becomes a part of the coil. The metal layer 62E and the metal layer 82 are formed by being separated by the opening 202Y and the groove 62Z. Further, the groove 62Y is provided to facilitate the formation of a spiral shape constituting the coil when the coil substrate is formed in a subsequent process. In FIG. 12C, the insulating layer 52 exposed from the opening 202Y and the grooves 62Y and 62Z is shown in a satin pattern.

  Similarly to the sprocket hole 13X, the sprocket hole 102X meshes with the pin of the sprocket driven by a motor or the like when the support film 102 is mounted on various manufacturing apparatuses in the process of manufacturing the coil substrate 10. This is a through hole (that is, a through hole for conveyance) for pitch feeding the film 102.

Next, the process shown in FIGS. 13 and 14 will be described. 13 and 14 are cross-sectional views corresponding to the position of line 12b-12b in FIG.
First, in the step shown in FIG. 13A, a semi-cured adhesive layer 71 that covers the entire surface (lower surface and side surfaces) of the metal layers 62D, 62E, and 82 is laminated on the lower surface of the insulating layer 52. For example, the adhesive layer 71 is formed so as to fill the grooves 62Y and 62Z and the opening 202Y (see FIG. 12A). For example, when a film-like insulating resin is used as the material of the adhesive layer 71, the film-like insulating resin is laminated on the lower surface of the insulating layer 52 by thermocompression bonding. This thermocompression bonding can be performed, for example, by pressing a film-like insulating resin with a predetermined pressure (for example, about 0.5 to 0.6 MPa) in a vacuum atmosphere. However, in this step, the film-like insulating resin is not thermally cured, and is in a B-stage state (semi-cured state). When a liquid or paste insulating resin is used as the material of the adhesive layer 71, the liquid or paste insulating resin is applied to the lower surface of the insulating layer 52 by, for example, a printing method or a spin coating method. Thereafter, the applied liquid or paste-like insulating resin is pre-baked to obtain a B-stage state. In addition, as a material of the contact bonding layer 71, it is preferable to use insulating resin with high fluidity, for example. By using an insulating resin having high fluidity in this way, the grooves 62Y and 62Z and the opening 202Y can be filled appropriately.

  Next, in the step shown in FIG. 13B, the through hole 62X is formed in the metal layer 62E exposed from the through hole 52X, and the through hole 71X communicating with the through hole 62X is formed in the adhesive layer 71. These through holes 62X and 71X are formed to have a smaller planar shape than the through hole 52X. In this example, the diameters of the through holes 62X and 71X are formed smaller than the diameter of the through hole 52X. Thereby, the upper surface of the metal layer 62E located around the through hole 62X is exposed from the through hole 52X. The through holes 62X and 71X can be formed by, for example, a press processing method or a laser processing method.

  As shown in FIG. 13C, the through holes 52X, 62X, and 71X are formed at positions that overlap the through hole 30X in plan view when the structure 42 is stacked on the upper surface 30B of the substrate 30. Further, the upper surface of the metal layer 62E is exposed at the bottom of the through hole 52Y.

  Subsequently, in the step shown in FIG. 13C, the structure shown in FIG. 13B (that is, the structure in which the structure 42 and the adhesive layer 71 are sequentially laminated on the lower surface 102A of the support film 102), The substrate is disposed above the structure in which the structure 41 is stacked on the lower surface 30A of the substrate 30. At this time, the structure shown in FIG. 13B is arranged with the structure 42 and the adhesive layer 71 facing downward so that the adhesive layer 71 faces the upper surface 30B of the substrate 30.

  14A, the structure 42 is laminated on the upper surface 30B of the substrate 30 with the adhesive layer 71 interposed therebetween. That is, the substrate 30 and the structure 42 are disposed to face each other with the adhesive layer 71 interposed therebetween, and the structure 42 is laminated on the upper surface 30B of the substrate 30 so that the structure 41 and the support film 102 are disposed outside. For example, the two structures shown in FIG. 13C are heated and pressed (hot pressed) from the upper and lower surfaces by a vacuum press or the like. Then, the semi-cured adhesive layer 71 is pressed by the lower surface of the metal layer 62E and the upper surface 30B of the substrate 30 and spreads in the planar direction. At this time, in the case where an insulating resin having high fluidity is used as the material of the adhesive layer 71, the adhesive layer 71 spreading in the planar direction leaks into the through hole 71X, and the adhesive layer 71 spreading in the planar direction causes the through hole 71X may be blocked. In this case, since the entire upper surface of the via wiring V1 exposed from the through hole 30X is covered with the adhesive layer 71, the via wiring V2 connected to the via wiring V1 cannot be formed in a subsequent process. On the other hand, in this example, the through hole 30X of the substrate 30 is formed to have a larger diameter than the through hole 71X of the adhesive layer 71. Thereby, since the pressure applied to the adhesive layer 71 around the through hole 30X is reduced, the leakage of the adhesive layer 71 into the through hole 71X can be suitably suppressed. In other words, in a hot press, it can suppress suitably that the planar shape of the through-hole 71X becomes small. Further, by this step, a part of the adhesive layer 71 extends into the through hole 30X, and the inner surface of the through hole 30X exposed from the via wiring V1 is covered with the expanded adhesive layer 71. Thereby, a part of the through hole 71X is formed in the through hole 30X exposed from the via wiring V1. In the above-described hot press, for example, a pressure that is approximately the same as the pressure when laminating the adhesive layer 71 on the lower surface of the insulating layer 52 or smaller than the pressure when laminating the adhesive layer 71 (for example, 0.2 to The two structural bodies shown in FIG. 13C are pressed from both the upper and lower surfaces.

  Thereafter, the adhesive layer 71 is cured. At this time, the through hole 71X, the through hole 62X, and the through hole 52X communicate with each other. For this reason, a part of the upper surface of the via wiring V1 is exposed at the bottom of the through hole 71X.

  In the steps shown in FIGS. 12, 13, and 14A, the through holes 62X and 71X are formed after the structure 42 is laminated on the upper surface 30B of the substrate 30 with the adhesive layer 71 interposed therebetween. Also good.

  Next, in the step shown in FIG. 14B, the support film 102 shown in FIG. 14A is removed (peeled) from the insulating layer 52. For example, the support film 102 is mechanically peeled from the insulating layer 52.

  Subsequently, the via wiring V2 filling the through holes 71X, 62X, and 52X is formed on the via wiring V1 exposed at the bottom of the through hole 71X. At this time, since the through hole 52X has a larger diameter than the through holes 71X and 62X, the via wiring V2 is also formed on a part of the upper surface of the metal layer 62E. As a result, the via wiring V2 is connected to the metal layer 62E constituting the inner surface of the through hole 62X and to the upper surface of the metal layer 62E located around the through hole 62X. The metal layer 61E and the metal layer 62E are connected in series via the via wirings V1 and V2. In this step, for example, the via wiring V2 is formed so that the upper surface thereof is substantially flush with the upper surface of the insulating layer 52. The via wiring V2 can be formed by, for example, an electrolytic plating method using the metal layer 81 and the metal layer 61E as a power feeding layer or a method such as filling with a metal paste. At this time, the via wiring V2 is formed by masking the metal layer 62E exposed from the through hole 52Y so that a plating film or the like is not formed in the through hole 52Y.

  Through the manufacturing process described above, in the stacked body in which the structure 41 is stacked on the lower surface 30A of the substrate 30 and the structure 42 is stacked on the upper surface 30B of the substrate 30, the metal layer 61E, the via wirings V1 and V2, and the metal Layer 62E is connected in series. The conductor parts connected in series are finally formed into a coil of about 1 turn and 3/4.

  Next, in the process illustrated in FIG. 15, a structure body in which the structure body 43 including the insulating layer 53 and the metal layer 63 </ b> E and the adhesive layer 72 are sequentially stacked is stacked on the lower surface 103 </ b> A of the support film 103. This step can be performed in the same manner as the steps shown in FIGS. 12 (a) to 13 (b). Specifically, this step and the steps shown in FIGS. 12A to 13B only differ in the positions of the through holes and the shape of the metal layer (wiring) after patterning the metal foil. . Therefore, the description of the manufacturing method in this step is omitted, and the structure of the structure shown in FIG. 15 will be described. In addition, the shape, thickness, material, etc. of the support film 103 and the support films 104 to 107 used in the subsequent process are the same as those of the support film 102 shown in FIG. The sprocket holes 103X to 107X formed in the outer frames 13 of the support films 103 to 107 also have the same function as the sprocket holes 102X of the support film 102.

  In the structure shown in FIG. 15A, through holes 53X and 53Y that penetrate the support film 103 and the insulating layer 53 in the thickness direction are formed, and penetrate through the metal layer 63E and the adhesive layer 72 in the thickness direction. Through holes 63X and 72X communicating with the hole 53X are formed. The through hole 53X has a larger diameter than the through holes 63X and 72X. Thereby, the upper surface of the metal layer 63E located around the through hole 63X is exposed from the through hole 53X. As shown in FIG. 15B, a metal layer 63E, a metal layer 63D, and a metal layer 83 are formed on the lower surface of the insulating layer 53. The metal layer 63E and the metal layers 63D and 83 are formed by being separated by the opening 203Y and the groove 63Z. In addition, the metal layer 63E is provided with a groove portion 63Y for facilitating formation of a spiral shape constituting the coil when the coil substrate is formed in a later process. For example, the metal layer 63E formed in this step has a larger planar shape than the wiring 63 shown in FIG. The metal layer 63E is a portion that is finally formed (die-cut or the like) and becomes a third-layer wiring 63 (about 1 turn) that becomes a part of the coil. As shown in FIG. 15A, the adhesive layer 72 fills the opening 203Y, the groove 63Y, and the groove 63Z (see FIG. 15B) so as to cover the lower surface and the side surface of the metal layer 63E. Thus, it is formed on the lower surface of the insulating layer 53. In FIG. 15B, the illustration of the adhesive layer 72 is omitted, and the insulating layer 53 exposed from the opening 203Y and the grooves 63Y and 63Z is shown in a satin pattern.

Next, the steps shown in FIGS. 16A to 16C will be described. 16A to 16C are cross-sectional views corresponding to the position of the line 15a-15a in FIG.
First, in the process shown in FIG. 16A, the structure 43 and the support film 103 are laminated on the insulating layer 52 of the structure 42 via the adhesive layer 72, as in the process shown in FIG. To do. That is, the structure body 42 and the structure body 43 are disposed to face each other via the adhesive layer 72, and the structure body 43 is laminated on the structure body 42 so that the structure body 41 and the support film 103 are disposed on the outside. At this time, since the through hole 52Y of the insulating layer 52 has a larger diameter than the through hole 72X of the adhesive layer 72, similarly to the adhesive layer 71, leakage of the adhesive layer 72 into the through hole 72X is suitably suppressed. can do. Further, the inner surface of the through hole 52Y is covered with the adhesive layer 72, and a part of the through hole 72X of the adhesive layer 72 is formed in the through hole 52Y. Furthermore, the through hole 72X, the through hole 63X, and the through hole 53X communicate with each other, and the metal layer 62E is exposed at the bottom of the through hole 72X.

Next, in the step illustrated in FIG. 16B, the support film 103 illustrated in FIG. 16A is peeled from the insulating layer 53. For example, the support film 103 is mechanically peeled from the insulating layer 53.
Subsequently, in the step shown in FIG. 16C, the via wiring V3 filling the through holes 72X, 63X, and 53X is formed in the same manner as the step shown in FIG. 14B. The via wiring V3 is connected to the metal layer 63E constituting the inner surface of the through hole 63X, is connected to the upper surface of the metal layer 63E located around the through hole 63X, and is connected to the metal layer 62E exposed from the through hole 72X. Connected to the top surface. Thereby, the metal layer 62E and the metal layer 63E are connected in series via the via wiring V3. In this step, for example, the via wiring V3 is formed so that the upper surface thereof is substantially flush with the upper surface of the insulating layer 53. The via wiring V3 can be formed by, for example, an electrolytic plating method using the metal layer 81 and the metal layer 61E as a power feeding layer or a method such as filling with a metal paste.

  In the stacked body in which the structure 41, the substrate 30, the structure 42, and the structure 43 are stacked by the manufacturing process described above, the metal layers 61E, 62E, and 63E are connected via the via wirings V1 to V3. Connected in series. The conductor parts connected in series are finally formed into coils of about 2 turns and 3/4.

  In the steps shown in FIGS. 15, 16A and 16B, the through holes 63X and 72X are formed after the structure 43 is laminated on the structure 42 via the adhesive layer 72. It may be.

  Next, in the step shown in FIG. 17, the structure 44 having the insulating layer 54 and the metal layer 64 </ b> E is laminated on the lower surface 104 </ b> A of the support film 104. Since this step can be performed in the same manner as the steps shown in FIGS. 12A to 13B, the description of the manufacturing method is omitted and the structure of the structure shown in FIG. 17 will be described.

  In the structure shown in FIG. 17A, through holes 54X and 54Y that penetrate the support film 104 and the insulating layer 54 in the thickness direction are formed, and penetrate through the metal layer 64E and the adhesive layer 73 in the thickness direction. Through holes 64X and 73X communicating with the hole 54X are formed. The through hole 54X has a larger diameter than the through holes 64X and 73X. Thereby, the upper surface of the metal layer 64E located around the through hole 64X is exposed from the through hole 54X. Further, a metal layer 64E, a metal layer 64D, and a metal layer 84 are formed on the lower surface of the insulating layer 54. As shown in FIG. 17B, the metal layer 64E and the metal layers 64D and 84 are formed by being separated by an opening 204Y and a groove 64Z. The metal layer 64E is provided with a groove portion 64Y for facilitating formation of a spiral shape constituting the coil when the coil substrate is formed in a later process. For example, the metal layer 64E formed in this step has a larger planar shape than the wiring 64 shown in FIG. The metal layer 64E is a part that is finally formed (die-cut or the like) and becomes the fourth-layer wiring 64 (about 3/4 of one turn) that becomes a part of the coil. Also, as shown in FIG. 17A, the adhesive layer 73 fills the opening 204Y (see FIG. 17B) and the grooves 64Y and 64Z so as to cover the lower surface and side surfaces of the metal layer 64E. Thus, it is formed on the lower surface of the insulating layer 54. In FIG. 17B, illustration of the adhesive layer 73 is omitted, and the insulating layer 54 exposed from the opening 204Y and the grooves 64Y and 64Z is shown in a satin pattern.

Next, the steps shown in FIGS. 18A and 18B will be described. 18 (a) and 18 (b) are cross-sectional views corresponding to the position of line 17a-17a in FIG. 17 (b).
First, in the step shown in FIG. 18A, the structure 44 and the support film 104 are laminated on the insulating layer 53 of the structure 43 via the adhesive layer 73, as in the step shown in FIG. To do. That is, the structure body 43 and the structure body 44 are disposed to face each other via the adhesive layer 73, and the structure body 44 is laminated on the structure body 43 so that the structure body 41 and the support film 104 are disposed on the outside. At this time, since the through hole 53Y of the insulating layer 53 has a larger diameter than the through hole 73X of the adhesive layer 73, similarly to the adhesive layer 71, leakage of the adhesive layer 73 into the through hole 73X is suitably suppressed. can do. Further, the inner surface of the through hole 53Y is covered with the adhesive layer 73, and a part of the through hole 73X of the adhesive layer 73 is formed in the through hole 53Y. Further, the through hole 73X, the through hole 64X, and the through hole 54X communicate with each other, and the metal layer 63E is exposed at the bottom of the through hole 73X. Next, the support film 104 is peeled off from the insulating layer 54.

  Subsequently, in the step shown in FIG. 18B, the via wiring V4 filling the through holes 73X, 64X, and 54X is formed in the same manner as the step shown in FIG. 14B. The via wiring V4 is connected to the metal layer 64E that forms the inner surface of the through hole 64X, is connected to the upper surface of the metal layer 64E that is located around the through hole 64X, and is connected to the metal layer 63E that is exposed from the through hole 73X. Connected to the top surface. Thereby, the metal layer 63E and the metal layer 64E are connected in series via the via wiring V4. In this step, for example, the via wiring V4 is formed so that the upper surface thereof is substantially flush with the upper surface of the insulating layer 54. The via wiring V4 can be formed by, for example, an electrolytic plating method using the metal layer 81 and the metal layer 61E as a power feeding layer or a method such as filling with a metal paste.

  In the stacked body in which the structure 41, the substrate 30, and the structures 42 to 44 are stacked by the manufacturing process described above, the metal layers 61E, 62E, 63E, and 64E are connected in series via the via wirings V1 to V4. Connected to. The conductor portions connected in series are finally formed into a coil of about 3 turns.

In the step shown in FIGS. 17 and 18A, the through holes 64X and 73X may be formed after the structure 44 is laminated on the structure 43 via the adhesive layer 73.
Next, in the step shown in FIG. 19, the structure 45 having the insulating layer 55 and the metal layer 65E is laminated on the lower surface 105A of the support film 105. Since this step can be performed in the same manner as the steps shown in FIGS. 12A to 13B, the description of the manufacturing method is omitted and the structure of the structure shown in FIG. 19 will be described.

  In the structure shown in FIG. 19A, through holes 55X and 55Y that penetrate the support film 105 and the insulating layer 55 in the thickness direction are formed, and penetrate through the metal layer 65E and the adhesive layer 74 in the thickness direction. Through holes 65X and 74X communicating with the hole 55X are formed. The through hole 55X is formed with a larger diameter than the through holes 65X and 74X. Thereby, the upper surface of the metal layer 65E located around the through hole 65X is exposed from the through hole 55X. Further, as shown in FIG. 19B, a metal layer 65E, a metal layer 65D, and a metal layer 85 are formed on the lower surface of the insulating layer 55. The metal layer 65E and the metal layers 65D and 85 are formed by being separated by the opening 205Y and the groove 65Z. In addition, the metal layer 65E is provided with a groove portion 65Y for facilitating formation of a spiral shape constituting the coil when the coil substrate is formed in a later step. For example, the metal layer 65E formed in this step has a larger planar shape than the wiring 65 shown in FIG. And this metal layer 65E is a site | part which becomes the wiring 65 (about 1 volume) of the 5th layer which is finally shape | molded (die cutting etc.) and becomes a part of coil. Further, as shown in FIG. 19A, the adhesive layer 74 fills the opening 205Y, the groove 65Y, and the groove 65Z (see FIG. 19B) so as to cover the lower surface and side surfaces of the metal layer 65E. Thus, it is formed on the lower surface of the insulating layer 55. In FIG. 19B, the illustration of the adhesive layer 74 is omitted, and the insulating layer 55 exposed from the opening 205Y and the groove portions 65Y and 65Z is shown in a satin pattern.

Next, the steps shown in FIGS. 20A and 20B will be described. 20A and 20B are cross-sectional views corresponding to the position of line 19a-19a in FIG. 19B.
First, in the process shown in FIG. 20A, the structure 45 and the support film 105 are laminated on the insulating layer 54 of the structure 44 via the adhesive layer 74, as in the process shown in FIG. To do. That is, the structure body 44 and the structure body 45 are disposed to face each other via the adhesive layer 74, and the structure body 45 is laminated on the structure body 44 so that the structure body 41 and the support film 105 are disposed on the outside. At this time, since the through hole 54Y of the insulating layer 54 has a larger diameter than the through hole 74X of the adhesive layer 74, similarly to the adhesive layer 71, leakage of the adhesive layer 74 into the through hole 74X is suitably suppressed. can do. Further, the inner surface of the through hole 54Y is covered with the adhesive layer 74, and a part of the through hole 74X of the adhesive layer 74 is formed in the through hole 54Y. Further, the through hole 74X, the through hole 65X, and the through hole 55X communicate with each other, and the metal layer 64E is exposed at the bottom of the through hole 74X. Next, the support film 105 is peeled from the insulating layer 55.

  Subsequently, in the step shown in FIG. 20B, the via wiring V5 that fills the through holes 74X, 65X, and 55X is formed as in the step shown in FIG. 14B. The via wiring V5 is connected to the metal layer 65E constituting the inner surface of the through hole 65X, is connected to the upper surface of the metal layer 65E located around the through hole 65X, and is connected to the metal layer 64E exposed from the through hole 74X. Connected to the top surface. Thereby, the metal layer 64E and the metal layer 65E are connected in series via the via wiring V5. In this step, for example, the via wiring V5 is formed so that the upper surface thereof is substantially flush with the upper surface of the insulating layer 55. The via wiring V5 can be formed by, for example, an electrolytic plating method using the metal layer 81 and the metal layer 61E as a power feeding layer, or a method such as filling with a metal paste.

  In the stacked body in which the structure 41, the substrate 30, and the structures 42 to 45 are stacked by the manufacturing process described above, the metal layers 61E, 62E, 63E, 64E, and 65E are connected via the via wirings V1 to V5. Connected in series. The conductor parts connected in series are finally formed into a coil of about 4 turns.

In the step shown in FIGS. 19 and 20A, the through holes 65X and 74X may be formed after the structure 45 is stacked on the structure 44 via the adhesive layer 74.
Next, in the step shown in FIG. 21, the structure 46 having the insulating layer 56 and the metal layer 66 </ b> E is laminated on the lower surface 106 </ b> A of the support film 106. Since this step can be performed in the same manner as the steps shown in FIGS. 12A to 13B, the description of the manufacturing method is omitted and the structure of the structure shown in FIG. 21 will be described.

  In the structure shown in FIG. 21A, through holes 56X and 56Y that penetrate the support film 106 and the insulating layer 56 in the thickness direction are formed, and penetrate through the metal layer 66E and the adhesive layer 75 in the thickness direction. Through holes 66X and 75X communicating with the hole 56X are formed. The through hole 56X has a larger diameter than the through holes 66X and 75X. Thereby, the upper surface of the metal layer 66E located around the through hole 66X is exposed from the through hole 56X. As shown in FIG. 21B, a metal layer 66E, a metal layer 66D, and a metal layer 86 are formed on the lower surface of the insulating layer 56. The metal layer 66E and the metal layers 66D and 86 are formed by being separated by the opening 206Y and the groove 66Z. In addition, the metal layer 66E is provided with a groove portion 66Y for facilitating formation of a spiral shape constituting the coil when the coil substrate is formed in a later step. For example, the metal layer 66E formed in this step has a larger planar shape than the wiring 66 shown in FIG. The metal layer 66E is a part that is finally formed (die-cut or the like) and becomes a sixth-layer wiring 66 (about 3/4 of one turn) that becomes a part of the coil. Further, as shown in FIG. 21A, the adhesive layer 75 covers the lower surface and side surfaces of the metal layer 66E, and fills the opening 206Y (see FIG. 21B) and the grooves 66Y and 66Z. Thus, it is formed on the lower surface of the insulating layer 56. In FIG. 21B, the illustration of the adhesive layer 75 is omitted, and the insulating layer 56 exposed from the opening 206Y and the grooves 66Y and 66Z is shown in a satin pattern.

Next, the steps shown in FIGS. 22A and 22B will be described. 22A and 22B are cross-sectional views corresponding to the position of the line 21a-21a in FIG.
First, in the step shown in FIG. 22A, the structure 46 and the support film 106 are laminated on the insulating layer 55 of the structure 45 via the adhesive layer 75, as in the step shown in FIG. To do. That is, the structure body 45 and the structure body 46 are disposed to face each other via the adhesive layer 75, and the structure body 46 is laminated on the structure body 45 so that the structure body 41 and the support film 106 are disposed on the outside. At this time, since the through hole 55Y of the insulating layer 55 has a larger diameter than the through hole 75X of the adhesive layer 75, similarly to the adhesive layer 71, leakage of the adhesive layer 75 into the through hole 75X is suitably suppressed. can do. Further, the inner surface of the through hole 55Y is covered with the adhesive layer 75, and a part of the through hole 75X of the adhesive layer 75 is formed in the through hole 55Y. Further, the through hole 75X, the through hole 66X, and the through hole 56X communicate with each other, and the metal layer 65E is exposed at the bottom of the through hole 75X. Next, the support film 106 is peeled from the insulating layer 56.

  Subsequently, in the step shown in FIG. 22B, via wiring V6 filling the through holes 75X, 66X, and 56X is formed in the same manner as the step shown in FIG. 14B. The via wiring V6 is connected to the metal layer 66E constituting the inner surface of the through hole 66X, is connected to the upper surface of the metal layer 66E located around the through hole 66X, and is connected to the metal layer 65E exposed from the through hole 75X. Connected to the top surface. Thereby, the metal layer 65E and the metal layer 66E are connected in series via the via wiring V6. In this step, for example, the via wiring V6 is formed so that the upper surface thereof is substantially flush with the upper surface of the insulating layer 56. The via wiring V6 can be formed by, for example, a method such as an electrolytic plating method using the metal layer 81 and the metal layer 61E as a power feeding layer or a metal paste filling.

  In the stacked body in which the structure 41, the substrate 30, and the structures 42 to 46 are stacked by the manufacturing process described above, the metal layers 61E, 62E, 63E, 64E, 65E, and 66E are connected to the via wirings V1 to V6. Are connected in series. The conductor parts connected in series are finally formed into approximately 4 turns and 3/4 coils.

In the step shown in FIGS. 21 and 22A, the through holes 66X and 75X may be formed after the structure 46 is laminated on the structure 45 via the adhesive layer 75.
Next, in the step shown in FIG. 23, a structure 47 having an insulating layer 57 and a metal layer 67E is laminated on the lower surface 107A of the support film 107. Since this step can be performed in the same manner as the steps shown in FIGS. 12A to 13B, the description of the manufacturing method is omitted and the structure of the structure shown in FIG. 23 will be described.

  In the structure shown in FIG. 23B, through holes 57X and 57Y that penetrate the support film 107 and the insulating layer 57 in the thickness direction are formed, and penetrate through the metal layer 67E and the adhesive layer 76 in the thickness direction. Through holes 67X and 76X communicating with the hole 57X are formed. The through hole 57X has a larger diameter than the through holes 67X and 76X. Thereby, the upper surface of the metal layer 67E located around the through hole 67X is exposed from the through hole 57X. As shown in FIG. 23C, a metal layer 67E, a connecting portion 67A, a metal layer 67D, and a metal layer 87 are formed on the lower surface of the insulating layer 57. The metal layer 67E and the metal layers 67D and 87 are formed by being separated by the opening 207Y and the groove 67Z. In addition, the metal layer 67E is provided with a groove portion 67Y for easily forming a spiral shape constituting the coil when the coil substrate is formed in a later step. For example, the metal layer 67E formed in this step has a larger planar shape than the wiring 67 shown in FIG. The metal layer 67E is a portion that is finally formed (die-cut or the like) and becomes a seventh-layer wiring 67 (about one turn) that becomes a part of the coil. Further, as shown in FIGS. 23A and 23B, the adhesive layer 76 covers the lower surface and side surfaces of the metal layer 67E, and fills the opening 207Y and the grooves 67Y and 67Z. And formed on the lower surface of the insulating layer 57. In FIG. 23C, illustration of the adhesive layer 76 is omitted, and the insulating layer 57 exposed from the opening 207Y and the grooves 67Y and 67Z is shown in a satin pattern.

  Next, the steps shown in FIGS. 24 and 25 will be described. 24 and 25 (a) are cross-sectional views corresponding to the position of line 23a-23a in FIG. 23 (c), and FIG. 25 (b) is at the position of line 23b-23b in FIG. 23 (c). FIG.

  First, in the step shown in FIG. 24A, as in the step shown in FIG. 14A, the structure 47 and the support film 107 are laminated on the insulating layer 56 of the structure 46 via the adhesive layer 76. To do. That is, the structure 46 and the structure 47 are disposed to face each other with the adhesive layer 76 interposed therebetween, and the structure 47 is laminated on the structure 46 so that the structure 41 and the support film 107 are disposed on the outside. At this time, since the through hole 56Y of the insulating layer 56 has a larger diameter than the through hole 76X of the adhesive layer 76, similarly to the adhesive layer 71, leakage of the adhesive layer 76 into the through hole 76X is suitably suppressed. can do. Further, the inner surface of the through hole 56Y is covered with the adhesive layer 76, and a part of the through hole 76X of the adhesive layer 76 is formed in the through hole 56Y. Furthermore, the through hole 76X, the through hole 67X, and the through hole 57X communicate with each other, and the metal layer 66E is exposed at the bottom of the through hole 76X. Next, in the step shown in FIG. 24B, the support film 107 shown in FIG. 24A is peeled from the insulating layer 57.

  Subsequently, in the process shown in FIGS. 25A and 25B, the via wiring V7 that fills the through holes 76X, 67X, and 57X is formed as in the process shown in FIG. 14B. The via wiring V7 is connected to the metal layer 67E constituting the inner surface of the through hole 67X, is connected to the upper surface of the metal layer 67E located around the through hole 67X, and is connected to the metal layer 66E exposed from the through hole 76X. Connected to the top surface. Thereby, the metal layer 66E and the metal layer 67E are connected in series via the via wiring V7. Also, as shown in FIG. 25B, a via wiring V8 that fills the through hole 57Y is formed. Thereby, the metal layer 67E is electrically connected to the via wiring V8. In this step, for example, the via wirings V7 and V8 are formed so that the upper surfaces thereof are substantially flush with the upper surface of the insulating layer 57. The via wirings V7 and V8 can be formed by, for example, a method such as an electrolytic plating method using the metal layer 81 and the metal layer 61E as a power feeding layer or a metal paste filling.

  In the stacked body in which the structure 41, the substrate 30, and the structures 42 to 47 are stacked by the manufacturing process described above, the metal layers 61E, 62E, 63E, 64E, 65E, 66E, and 67E are connected to the via wiring V1. Are connected in series via V7. The conductor parts connected in series are finally formed into approximately 5 turns and 1/2 coil.

In the steps shown in FIGS. 23 and 24, the through holes 67X and 76X may be formed after the structure 47 is laminated on the structure 46 via the adhesive layer 76.
By the above manufacturing process, the stacked body 23 in which the structure 41 is stacked on the lower surface 30A of the substrate 30 and the multiple structures 42 to 47 are stacked in order on the upper surface 30B of the substrate 30 is manufactured in each individual region A1. Can do.

  Next, in the step shown in FIG. 26A, the structure shown in FIG. 25 is cut along the cutting position A2 shown in FIG. 9 into individual pieces to obtain individual sheet-like coil substrates 10. . In the example of FIG. 26A, twelve individual regions A <b> 1 are formed on the coil substrate 10. In addition, the reel-like board | substrate 100 which completed the process shown in FIG. 25 may be shipped as a product as it is, without implementing the process shown to Fig.26 (a).

  Next, in the steps shown in FIGS. 26 (b) to 28, the coil substrate 10 is molded by die cutting or the like to remove unnecessary portions, and the metal layers 61E to 67E formed in the respective layers are formed into one spiral coil. The wirings 61 to 67 having a shape constituting the part are processed. Here, FIG. 26B is a plan view illustrating the metal layer 67E and the adhesive layer 76 before the coil substrate 10 is formed. In FIG. 26B, the insulating layer 57 is not shown, and the adhesive layer 76 exposed from the opening 207Y and the grooves 67Y and 67Z is shown in a satin pattern. FIG. 27 is a perspective view schematically illustrating the shapes of the metal layers 61 </ b> E to 67 </ b> E formed in each layer before the coil substrate 10 is formed. The coil substrate 10 shown in FIGS. 26 (b) and 27 is formed by, for example, a press working method using a mold to obtain the shapes shown in FIGS. 28 (a) and 28 (b). Specifically, unnecessary portions of the coil substrate 10 shown in FIGS. 26B and 27, that is, the substrate 30 at positions corresponding to the openings 20Y, the insulating layers 51 to 57, the metal layers 61E to 67E, and the adhesive layer 71. To 76 (see FIG. 25 (b)) are removed by stamping. Furthermore, the unnecessary part of the coil substrate 10, that is, the substrate 30, the insulating layers 51 to 57, the metal layers 61E to 67E, and the adhesive layer that overlap with the regions shown by the broken lines in FIG. 26B and FIG. 71 to 76 are removed by stamping. As a result, as shown in FIG. 28B, the opening 20Y is formed at a required location of the block 11, and the outer shape of the laminate 23 is formed into a substantially rectangular shape. Furthermore, a through hole 23 </ b> X is formed in a substantially central portion of the stacked body 23. As a result, the metal layers 61E to 67E formed in the respective layers are formed, and become wirings 61 to 67, respectively, as shown in FIG. These wirings 61 to 67 are connected in series via via wirings V1 to V7 to form a spiral coil of about 5 turns and 1/2. Moreover, a part of each of the wirings 61 to 67 is exposed from the inner wall surface of the through hole 23X by forming the through hole 23X. Although illustration is omitted here, a part of each of the wirings 61 to 67 is also exposed from the outer wall surface (side wall) of the stacked body 23 by the formation of the opening 20Y (see FIG. 3). In addition, the laminated body 23 shape | molded in this way is formed in each separate area | region A1, and the adjacent laminated bodies 23 are mutually connected via the connection part 12. FIG.

  In this step, the metal layers before forming (metal layers 61E to 67E and metal layers 61D to 67D) formed in the structures 41 to 47 are formed in almost the same shape. That is, the metal layers 61D to 67D, which are dummy patterns, are provided on the structures 41 to 47, thereby reducing the shape difference between the metal layers formed on the structures 41 to 47. Thereby, it can suppress that the laminated body 23 deform | transforms due to the said shape difference at the time of press work.

  In addition, you may make it shape | mold (namely, formation of the opening part 20Y and the through-hole 23X) of the coil board | substrate 10 with a laser processing method etc. instead of the press processing method using a metal mold | die. Further, in this step, in addition to the formation of the opening 20Y and the through hole 23X, as shown in FIG. 28 (b), a recognition mark that penetrates the connecting portion 12 in the thickness direction at a required portion of the connecting portion 12. 12X may be formed. This recognition mark 12X can be formed by, for example, a press working method using a mold or a laser working method.

  Next, in the step shown in FIGS. 29 and 30A, an insulating film 25 that covers the entire surface of the laminate 23 including the inner wall surface of the through hole 23X is formed. That is, the outer wall surface (side wall) of the laminate 23 formed in each individual region A1, the lower surface and side surfaces of the lowermost wiring 61, the upper surface of the uppermost insulating layer 57, the upper surfaces of the via wirings V7 and V8, and the through hole An insulating film 25 that continuously covers the inner wall surface of 23X is formed. Since the end faces of the wirings 61 to 67 are exposed on the outer wall surface of the multilayer body 23 and the inner wall surface of the through hole 23X, when the inductor 90 (see FIG. 8B) is manufactured, the wirings 61 to 67 are manufactured. May be short-circuited with a conductor (such as a magnetic filler) that may be contained in the sealing resin 91. On the other hand, in this example, since the insulating film 25 covering the surface of the laminate 23 is formed, a short circuit with a conductor that may be contained in the sealing resin 91 can be suppressed.

  The insulating film 25 can be formed by, for example, a spin coating method or a spray coating method. Further, as the insulating film 25, an electrodeposition resist may be used. In this case, the electrodeposition resist (insulating film 25) is applied only to the end surfaces of the wirings 61 to 67 exposed on the outer wall surface of the laminate 23 and the inner wall surface of the through hole 23X by the electrodeposition coating method.

Through the above manufacturing process, the coil substrate 20 is manufactured in each individual region A1, and the coil substrate 10 provided with a plurality of coil substrates 20 is manufactured.
Next, a method for manufacturing the inductor 90 will be described.

  First, in the step shown in FIG. 30B, a sealing resin 91 that seals the entire coil substrate 20 formed in each individual region A1 is formed. That is, the sealing resin 91 is formed over the entire individual area A1. Thus, the through hole 20X of the coil substrate 20 is filled with the sealing resin 91, and the outer wall surface (side wall) of the coil substrate 20, the upper surface of the coil substrate 20 (upper surface of the insulating film 25), and the lower surface of the coil substrate 20 (insulating film). 25) is covered with a sealing resin 91. As a method for filling the sealing resin 91, for example, a transfer molding method, a compression molding method, or an injection molding method can be used.

  Next, the structure shown in FIG. 30B is cut along a cutting position indicated by a broken line, that is, the coil substrate 10 is cut for each individual region A1. As a result, the connecting portion 12 and the outer frame 13 are removed, and the coil substrate 20 sealed with the sealing resin 91 is singulated to obtain a plurality of structures shown in FIG. At this time, the connecting portion 61A is exposed on one side surface 20A of the coil substrate 20, and the connecting portion 67A is exposed on the other side surface 20B of the coil substrate 20.

  In the steps shown in FIGS. 30B and 31A, after the sealing resin 91 for sealing the coil substrate 20 formed in each individual area A1 is formed, the coil substrate 20 is separated into individual pieces. I tried to do it. For example, the sealing resin 91 may be formed so as to seal the portions other than the side surfaces 20A and 20B of each coil substrate 20 after the coil substrates 20 are separated into pieces.

  Subsequently, in the step shown in FIG. 31B, an electrode 92 that continuously covers a part of the side surface 20A of the coil substrate 20, the one side surface, the upper surface, and the lower surface of the sealing resin 91 is formed. In addition, an electrode 93 that continuously covers a part of the side surface 20B of the coil substrate 20 and the other side surface, upper surface, and lower surface of the sealing resin 91 is formed. The inner wall surface of the electrode 92 is in contact with the side surface of the connecting portion 61 </ b> A exposed from the side surface 20 </ b> A of the coil substrate 20. Thereby, the connecting portion 61A and the wiring 61 formed integrally with the connecting portion 61A are electrically connected to the electrode 92. Further, the inner wall surface of the electrode 93 is in contact with the side surface of the connecting portion 67A exposed from the side surface 20B of the coil substrate 20. Thereby, the connecting portion 67A and the wiring 67 formed integrally with the connecting portion 67A are electrically connected to the electrode 93.

Through the above manufacturing process, the inductor 90 shown in FIG. 8B can be manufactured.
According to this embodiment described above, the following effects can be obtained.
(1) The structures 41 to 47 having the wirings 61 to 67 that are part of the spiral coil and the insulating layers 51 to 57 are laminated, and the wirings 61 to 67 that are vertically adjacent to each other are connected to the via wirings V1 to V7. In this way, a single spiral coil is produced. Thus, by adjusting the number of stacked layers of the structure, a coil having an arbitrary number of turns can be produced without changing the planar shape. For this reason, a coil having a size (for example, the planar shape is 1.6 mm × 0.8 mm) smaller than the conventional size (for example, the planar shape is 1.6 mm × 1.6 mm) can be easily manufactured.

  (2) Further, by increasing the number of stacked structures, the number of turns (number of turns) of the coil can be increased without changing the planar shape. For this reason, a small coil with a large inductance can be easily manufactured.

  (3) In each of the structures 42 to 47, the through holes 52X to 57X having a planar shape larger than the through holes 62X to 67X provided in the wirings 62 to 67 are formed in the insulating layers 52 to 57, respectively. Furthermore, a via wiring V2 filling the through holes 62X and 52X, a via wiring V3 filling the through holes 63X and 53X, a via wiring V4 filling the through holes 64X and 54X, a via wiring V5 filling the through holes 65X and 55X, The via wiring V6 filling the through holes 66X and 56X and the via wiring V7 filling the through holes 67X and 57X are formed. Thus, the via wirings V2 to V7 are connected to the upper surfaces of the wirings 62 to 67 located around the through holes 62X to 67X and exposed from the through holes 52X to 57X together with the inner surfaces of the through holes 62X to 67X. Can be made. Therefore, for example, the contact area between the via wirings V2 to V7 and the wirings 62 to 67 can be increased as compared with the case where the planar shapes of the through holes 52X to 57X are formed to the same size as the through holes 62X to 67X. it can. As a result, the connection reliability between the via wirings V2 to V7 and the wirings 62 to 67 can be improved. As a result, the connection reliability of the wirings 62 to 67 adjacent in the vertical direction can be improved.

  (4) For example, on the lower surface 103A of the support film 103, a structure 43 having a metal layer 63E having a through hole 63X and an insulating layer 53, and an adhesive layer 72 having a through hole 72X communicating with the through hole 63X are provided. A stacked structure is prepared in order. Also, a through hole 52Y having a larger planar shape than the through holes 63X and 72X is formed in the insulating layer 52 of the structure 42. And the structure 43 laminated | stacked on the support film 103 was opposingly arranged on the structure 42 through the contact bonding layer 72, and it laminated | stacked so that the support film 103 might become an outer side. At this time, since the through hole 52Y is formed larger than the planar shape of the through hole 72X of the adhesive layer 72, leakage of the adhesive layer 72 into the through hole 72X can be suitably suppressed. Therefore, when the structure 43 is laminated on the structure 42 via the adhesive layer 72, even when a high pressure is applied to the structures 42, 43 and the adhesive layer 72, or the material of the adhesive layer 72 Even when a material with high fluidity is used, it is possible to suitably suppress a reduction in the planar shape of the through hole 72X. The same can be said when the other structures 44 to 47 are stacked.

  (5) A through electrode (via wiring V2 to V8) that electrically connects the upper and lower adjacent wirings 62 to 67 is connected to the insulating layer included in the lower structure among the upper and lower adjacent structures, and the upper side The wiring and the insulating layer included in the structure are formed so as to penetrate therethrough. For this reason, in the insulating layers 52 to 57 included in the structures 42 to 47, penetrating electrodes (via wirings V2 to V8) penetrating the insulating layers 52 to 57 in the thickness direction are formed in two places. For example, via wirings V2 and V3 are formed in the insulating layer 52, via wirings V3 and V4 are formed in the insulating layer 53, via wirings V4 and V5 are formed in the insulating layer 54, and vias are formed in the insulating layer 55. Wirings V5 and V6 are formed, via wirings V6 and V7 are formed in the insulating layer 56, and via wirings V7 and V8 are formed in the insulating layer 57. Thereby, in the insulating layers 52 to 57, the via wirings V <b> 2 to V <b> 8 serve as a support body and maintain rigidity, so that twisting of the inductor 90 as a whole can be suppressed.

  (6) In the laminated body 23, the board | substrate 30 whose thermal expansion coefficient is lower than the insulating layers 51-57 which the structures 41-47 have was provided. Thereby, when a temperature change occurs in the coil substrate 20, the thermal deformation (thermal contraction or thermal expansion) of the substrate 30 can be reduced, so that the displacement of the positions of the wirings 61 to 67 formed in each layer can be suppressed. That is, even when a temperature change occurs in the coil substrate 20, it is possible to suitably suppress the position of the coil (coil substrate 20) configured from the wirings 61 to 67 from being deviated from the design value. In other words, the positional accuracy of the coil composed of the wirings 61 to 67 can be improved.

  (7) The rigidity of the substrate 30 is made higher than that of the insulating layers 51 to 57. For example, the substrate 30 is formed thicker than the insulating layers 51 to 57. Thus, by giving the board | substrate 30 high rigidity, the thermal deformation of the coil substrate 20 whole can be suppressed.

  (8) The stacked bodies 23 are formed by laminating the structures 41 to 47 on the upper and lower surfaces of the substrate 30, and the wiring 61 is exposed in the lowermost layer of the stacked body 23. At this time, the wiring 61 (for example, a copper layer) has higher adhesion to the insulating film 25 than the substrate 30 (for example, a polyimide film). For this reason, compared with the case where the board | substrate 30 is exposed to the lowest layer of the laminated body 23, the adhesiveness of the laminated body 23 and the insulating film 25 can be improved. In addition, when the substrate 30 is exposed in the lowermost layer of the stacked body 23, the adhesion between the substrate 30 and the insulating film 25 is low, so that the insulating film 25 is insulated from the lower surface of the substrate 30 before the insulating film 25 is formed. It is necessary to perform a surface treatment (for example, a plasma treatment) for improving the adhesion with the film 25. On the other hand, in this example, since the adhesion between the wiring 61 and the insulating film 25 is high, it is not necessary to perform the surface treatment as described above.

  (9) In the coil substrate 10, a part of the substrate 30 constituting the laminate 23 is used as the outer frame 13, and the sprocket hole 13 </ b> X is formed in the outer frame 13. Thereby, the coil board | substrate 10 can be easily conveyed using the sprocket hole 13X of the board | substrate 30, without providing additional members other than the member which comprises the laminated body 23. FIG.

  (10) By the way, it is also conceivable to form a wiring having a shape constituting a part of the coil in each structure in advance, and to stack the structures. That is, in this example, the wirings 61 to 67 in the state where the through holes 23X are formed are formed in the corresponding structures 41 to 47, and the structures 41 to 47 are stacked on both upper and lower surfaces of the substrate 30. A method of forming the laminate 23 is also conceivable. However, with this method, it is not possible to stack the wirings so that they are shifted in the planar direction (for example, left and right) and completely overlap in plan view. Thereafter, when a through hole or the like is formed in the laminate, a part of the misaligned wiring may be removed. Such a problem can be solved, for example, by thinning the wiring formed in each structure in advance. However, in this case, there arises a new problem that the DC resistance of the coil increases.

  On the other hand, in the manufacturing method of the present embodiment, the metal layers 61E to 67E having a planar shape larger than the wirings 61 to 67 having the shape of the spiral coil are formed in the respective structures 41 to 47 in advance. . And each structure 41-47 is laminated | stacked on the upper and lower surfaces of the board | substrate 30, the laminated body 23 is formed, this laminated body 23 is shape | molded in the thickness direction, and each metal layer 61E-67E is made of a helical coil. The wirings 61 to 67 having a part of the shape are simultaneously processed. Therefore, a spiral coil can be formed from the wirings 61 to 67 that are stacked with high precision so that the wirings 61 to 67 are not displaced in the plane direction and overlap in a plan view. As a result, it is possible to reduce the DC resistance of the coil constituted by the wirings 61 to 67. That is, since it is not necessary to consider the positional deviation of the wirings 61 to 67 in the planar direction, the widths of the wirings 61 to 67 can be increased, and the DC resistance of the coil can be reduced.

  (11) As the substrate 100 and the support films 102 to 107, reel-like (tape-like) flexible insulating resin films are used. Thereby, the coil board | substrate 10 can be manufactured by a reel to reel. For this reason, cost reduction of the coil board | substrate 10 by mass production is realizable.

  (12) The wirings 61 to 67 formed in one structure 41 to 47 (one layer) are set to be one turn or less of the coil. For this reason, it becomes possible to increase the width of the wiring formed in one structure 41 to 47 (one layer). That is, the cross-sectional area in the width direction of the wirings 61 to 67 can be increased, and the winding resistance directly connected to the performance of the inductor can be reduced.

  (13) The metal layers 61D to 67D, which are dummy patterns, are provided on the structures 41 to 47, respectively. Thereby, the shape difference of the metal layer formed in each structure 41-47 can be made small. For this reason, it can suppress suitably that the unevenness | corrugation arises in the insulating layers 51-57 which coat | cover the said metal layer resulting from the shape difference mentioned above.

(14) The metal layers 81 to 87 are laminated on the upper and lower surfaces of the substrate 30 located in the connecting portion 12. Thereby, the mechanical strength of the whole coil board | substrate 10 can be raised.
(Modification of the first embodiment)
In addition, the said 1st Embodiment can also be implemented in the following aspects which changed this suitably.

  -You may abbreviate | omit formation of the opening parts 201Y-207Y in the manufacturing process of the said 1st Embodiment. In this case, for example, in the process of patterning the metal foil 161 and the like (for example, the process shown in FIG. 11B), only the groove portions 61Y and 61Z are formed in the metal foil 161 covering the entire lower surface of the insulating layer 51. To do. That is, in this case, the metal foil 161 other than the groove portions 61Y and 61Z is left, and a metal layer that covers the lower surface of the insulating layer 51 other than the groove portions 61Y and 61Z is formed. The same applies to the other layers. For example, a metal layer that covers the lower surface of the insulating layer 52 other than the grooves 62Y and 62Z is formed on the lower surface of the insulating layer 52.

  A recognition mark similar to the recognition mark 12X in the first embodiment and the modification may be formed on the outer frame 13. That is, a through hole for positioning (positioning) may be formed in the outer frame 13. In this case, both the recognition mark and the sprocket hole 13X may be formed on the outer frame 13, or only the recognition mark may be formed on the outer frame 13.

  In the first embodiment, after the via wiring V1 is formed in the through hole 51X of the insulating layer 51 and a part of the through hole 30X of the substrate 30, the structure 42 is formed on the upper surface 30B of the substrate 30 via the adhesive layer 71. The via wiring V2 filling the through holes 71X, 62X and 52X is formed on the via wiring V1. Not limited to this, the formation of the via wiring V1 is omitted, and after the structure 42 is laminated on the upper surface 30B of the substrate 30 via the adhesive layer 71, the via wiring filling the through holes 51X, 30X, 71X, 62X, and 52X. V2 may be formed.

  In the first embodiment and each of the modifications described above, the through holes 52Y to 56Y of the insulating layers 52 to 56 are formed larger than the planar shape of the through holes 72X to 76X of the adhesive layers 72 to 76 immediately above. . For example, as shown in FIG. 32, the through holes 52Y to 56Y (only the through holes 52Y, 55Y, and 56Y are shown in FIG. 32) are replaced with the through holes 72X to 76X ( In FIG. 32, it may be formed to have substantially the same size as the planar shape of the through holes 72X, 75X, and 76X). Even with such a structure, the same effects as the effects (1) to (3) and (5) to (14) of the above embodiment can be obtained.

  In the first embodiment and each of the modifications described above, the through hole 30X of the substrate 30 and the through hole 51X of the insulating layer 51 are formed larger than the planar shape of the through hole 71X of the adhesive layer 71 laminated on the substrate 30. I tried to do it. For example, as shown in FIG. 32, the through holes 30X and 51X may be formed to have substantially the same size as the planar shape of the through hole 71X. In this case, the via wiring V1 may be formed so as to fill the through holes 51X and 30X. Alternatively, the via wiring V1 may be omitted, and the via wiring V2 may be formed so as to fill the through holes 51X, 30X, 71X, 62X, and 52X.

  -The number of the structures laminated on the upper and lower surfaces of the substrate 30 in the first embodiment and each of the modifications is not particularly limited. For example, two or more structures may be stacked on the lower surface 30A of the substrate 30, or 1 to 5, or seven or more structures may be stacked on the upper surface 30B of the substrate 30. . In addition, the number of structures stacked on the lower surface 30A of the substrate 30 and the number of structures stacked on the upper surface 30B of the substrate 30 are set so that the substrate 30 is disposed near the center of the stacked body 23 in the thickness direction. You may make it set.

-You may abbreviate | omit the board | substrate 30 in the said 1st Embodiment and said each modification.
For example, in the laminate 23A of the inductor 90A shown in FIG. 33, the structure 42 is laminated on the insulating layer 51 of the structure 41 via the adhesive layer 71. In this case, the wiring 61 and the wiring 62 are electrically connected by the via wiring V2 that fills the through holes 71X, 62X, and 52X. By omitting the substrate 30 in this way, the interlayer distance between the wirings 61 and 62 can be shortened, so that the inductance of the inductor 90A can be improved. Further, since the substrate 30 is omitted, the entire inductor 90A can be thinned.

(Second Embodiment)
Next, a second embodiment will be described with reference to FIGS.
In the laminated body 23B of the inductor 90B shown in FIG. 34, the structure 41 (insulating layer 51 and wiring 61), the substrate 30, and the via wiring V1 are omitted from the inductor 90 shown in FIG. The structure 42 is laminated on the top. In the stacked body 23B, the lower surface of the adhesive layer 71 is the outermost surface (here, the lowermost surface) of the stacked body 23B. In this case, for example, the via wiring V2 is filled in the through holes 71X, 62X, and 52X, and the lower end surface of the via wiring V2 is exposed from the adhesive layer 71. Then, the insulating film 25 is formed so as to cover the lower end surface of the via wiring V2 and the lower surface of the adhesive layer 71. In the laminate 23B, since the wiring 62 is the lowermost wiring, a connection portion 62A similar to the connection portion 61A is formed at one end of the wiring 62.

Next, an example of a method for manufacturing the inductor 90B will be described.
First, in the step shown in FIG. 35A, as in the step shown in FIG. 12, the insulating layer 52 having the through holes 52X and 52Y, the metal layers 62D, 62E, and 82 on the lower surface 102A of the support film 102, and A structure in which a metal foil having the connecting portion 62A is sequentially laminated is prepared. Subsequently, the adhesive layer 71 is disposed below the metal layers 62D, 62E, and 82.

  Next, in the step shown in FIG. 35 (b), as in the step shown in FIG. 13 (a), the entire surface of the metal layers 62D, 62E, 82 and the connecting portion 62A is covered on the lower surface of the insulating layer 52. A semi-cured adhesive layer 71 is laminated. Subsequently, as in the step shown in FIG. 13B, the through hole 62X is formed in the metal layer 62E exposed from the through hole 52X, and the through hole 71X communicating with the through hole 62X is formed in the adhesive layer 71. Form.

  Next, in the step illustrated in FIG. 35C, the structure 42 is stacked on the upper surface 110 </ b> A of the support substrate 110 with the adhesive layer 71 interposed. For example, the structure shown in FIG. 35B and the support substrate 110 are heated and pressed from above and below by a vacuum press or the like. Thereafter, the adhesive layer 71 is cured. Thereby, the adhesive layer 71 is bonded to the support substrate 110 and the adhesive layer 71 is bonded to the structure 42. At this time, a part of the upper surface 110A of the support substrate 110 is exposed at the bottom of the through hole 71X. For example, a metal plate or a metal foil can be used as the support substrate 110. Further, as the support substrate 110, a resin film such as a polyimide film or a PPS (polyphenylene sulfide) film, or a tape-shaped substrate such as a glass plate can be used. In this embodiment, a copper plate is used as the support substrate 110. Further, the support substrate 110 is formed thicker than the wiring 62 and thicker than the insulating layer 52, for example. Such a support substrate 110 can sufficiently secure the mechanical strength of the structure being manufactured. For this reason, even if it is a case where the board | substrate 30 is abbreviate | omitted, it can suppress suitably that the handleability of the structure in the middle of manufacture falls.

  Next, in the step shown in FIG. 36A, via wiring V2 filling the through holes 71X, 62X, and 52X is formed on the upper surface 110A of the support substrate 110 exposed at the bottom of the through hole 71X. The via wiring V2 can be formed by, for example, an electrolytic plating method. For example, the first conductive layer (for example, Ni layer) is formed on the support substrate 110 exposed at the bottom of the through hole 71X by an electrolytic plating method using the support substrate 110 (here, a copper plate) as a power feeding layer. Subsequently, a second conductive layer (for example, a Cu layer) is formed on the first conductive layer by electrolytic plating using the support substrate 110 as a power feeding layer. As a result, a via wiring V2 having a two-layer structure is formed. The material of the first conductive layer is preferably a material that can be an etching stopper layer when the support substrate 110 is removed by etching in a later step. Thus, the support substrate 110 of this example functions as a support in the manufacturing process, and also functions as a power supply layer in the electrolytic plating method. The via wiring V2 can also be formed by other methods such as filling with a metal paste.

  Subsequently, in the process illustrated in FIG. 36B, the structures 43 to 47 are stacked on the structure 42 stacked on the upper surface 110 </ b> A of the support substrate 110 as in the processes illustrated in FIGS. 15 to 25. . Through the above manufacturing process, it is possible to manufacture a stacked body 23B in which a plurality of structures 42 to 47 are sequentially stacked on the upper surface 110A of the support substrate 110 in each individual region A1. In this step, when the via wirings V3 to V7 are formed by an electrolytic plating method, the support substrate 110 and the via wiring V2 can be used as a power feeding layer.

  Next, in the step shown in FIG. 37 (a), the metal layers 62E to 67E (see FIG. 36 (b)) formed in the respective layers are formed by die cutting or the like, as in the steps shown in FIGS. Then, the wirings 62 to 67 having a shape constituting a part of the spiral coil are processed. In this step, since the metal layers 62E to 67E are formed in a state where the laminate 23B is laminated on the support substrate 110 having high rigidity, the displacement of the positions of the wirings 62 to 67 during the formation can be suppressed. . Thereby, the positional accuracy of wiring 62-67 can be improved, and the positional accuracy of the coil comprised from these wirings 62-67 can be improved.

  Next, the support substrate 110 used as the temporary substrate is removed. For example, when a copper plate is used as the support substrate 110, the via wiring V2 (specifically, the Ni layer is formed by wet etching using a ferric chloride aqueous solution, a cupric chloride aqueous solution, an ammonium persulfate aqueous solution, or the like). 1 conductive layer) and the adhesive layer 71 are selectively etched away. At this time, the first conductive layer (Ni layer) and the adhesive layer 71 in the via wiring V2 function as an etching stopper layer when the support substrate 110 is etched. In addition, when using a PI film etc. as the support substrate 110, or when providing the peeling layer, you may make it mechanically peel the support substrate 110 from the laminated body 23B. By this step, as shown in FIG. 37B, the lower end surface of the via wiring V2 and the lower surface of the adhesive layer 71 are exposed to the outside.

  Further, according to this step, the support substrate 110 formed relatively thick in order to ensure the mechanical strength of the structure in the manufacturing process can be removed from the laminate 23B. For this reason, in order to ensure the mechanical strength of the structure in the manufacturing process, it is not necessary to form each member of the laminated body 23B thickly. Accordingly, the entire laminate 23B can be thinned.

  Subsequently, in the step shown in FIG. 38, the insulating film 25 that covers the entire surface of the multilayer body 23B including the inner wall surface of the through hole 23X is formed. Thereby, the coil board | substrate 20 is manufactured in each separate area | region A1. Thereafter, by performing a process similar to the process illustrated in FIGS. 30B to 31B, the inductor 90B illustrated in FIG. 34 can be manufactured.

Thus, by omitting the structure 41 (the insulating layer 51 and the wiring 61), the substrate 30, and the via wiring V1, the inductance of the inductor 90B can be improved.
(Third embodiment)
Next, a third embodiment will be described with reference to FIGS.

  In the laminated body 23C of the inductor 90C shown in FIG. 39, the substrate 30 is omitted from the inductor 90 shown in FIG. 8B, and the structure 42 is formed on the insulating layer 51 of the structure 41 via the adhesive layer 71. Are stacked. More specifically, the insulating layer 51 having the through hole 51X is laminated on the upper surface of the lowermost wiring 61, and the adhesive layer 71 is laminated on the upper surface of the insulating layer 51. At this time, a part of the adhesive layer 71 is formed in the through hole 51X and is formed so as to cover the inner surface of the through hole 51X. The adhesive layer 71 is formed so as to cover part of the side surfaces of the wiring 62 and the metal layer 62D. A through hole 71 </ b> X is formed in the adhesive layer 71 so as to penetrate the adhesive layer 71 in the thickness direction and expose a part of the upper surface of the wiring 61. The through hole 71X is formed to penetrate from the upper surface of the adhesive layer 71 to the lower surface of the adhesive layer 71 formed in the through hole 51X. That is, a part of the through hole 71X is formed in the through hole 51X. In other words, the planar shape of the through hole 51X is formed larger than the planar shape of the through hole 71X.

  A wiring 62 having a through hole 62X communicating with the through hole 71X is laminated on the upper surface of the adhesive layer 71. An insulating layer 52 is laminated on the upper surface of the wiring 62 and the upper surface of the adhesive layer 71. The insulating layer 52 has a through hole 52X that penetrates the insulating layer 52 in the thickness direction and communicates with the through holes 62X and 71X. The through hole 52X is formed so as to expose the upper surface of the wiring 62 positioned around the through hole 62X. That is, the planar shape of the through hole 52X is larger than the planar shape of the through holes 62X and 71X.

  A via wiring V2 is formed in the communicating through holes 52X, 62X, 71X. The via wiring V2 is formed on the wiring 61 exposed from the through hole 71X, and is formed so as to fill all the through holes 52X, 62X, 71X. The wiring 61 and the wiring 62 are connected in series via the via wiring V2.

  Further, in the coil substrate 20 of this example, an insulating film 25C that covers only a part of the surface of the multilayer body 23C is used instead of the insulating film 25 that covers the entire surface of the multilayer body 23 shown in FIG. 8B. Is formed. Specifically, the insulating film 25C is formed so as to cover the surface (exposed portion) of the conductor exposed on the surface of the multilayer body 23C. More specifically, the insulating film 25C includes the side surfaces of the wirings 62 to 67 exposed on the inner wall surface of the through hole 23X, the side surfaces of the wirings 62 to 67 exposed on the outer wall surface of the stacked body 23C, and the bottom layer. The wiring 61 is formed so as to cover the side surface and the lower surface of the wiring 61 and the upper surface of the uppermost via wirings V7 and V8 (only the via wiring V7 is shown in FIG. 39). The insulating films 25C covering the wirings 61 to 67 and the via wirings V7 and V8 are formed separately from each other. For example, the insulating film 25C that covers the side surface and the lower surface of the wiring 61 and the insulating film 25C that covers the side surface of the wiring 62 exposed on the inner wall surface of the through hole 23X are formed separately from each other. Such an insulating film 25C is made of, for example, an electrodeposition resin formed by an electrodeposition method (electrodeposition coating method). As a material for the electrodeposition resin, an insulating resin such as an epoxy resin, an acrylic resin, or an imide resin can be used. The insulating film 25C may be formed so as to cover a part of the insulating layers 51 to 57 and the adhesive layers 71 to 76 formed around the wirings 61 to 67 and the via wirings V7 and V8.

However, the surfaces of the connecting portions 61A and 67A exposed on the side surfaces 20A and 20B of the stacked body 23C are exposed from the insulating film 25C (that is, not covered with the insulating film 25C).
The sealing resin 91 is formed so as to entirely cover the coil substrate 20 (laminated body 23C and insulating film 25C) except for the side surfaces 20A and 20B from which the connecting portions 61A and 67A are exposed. For example, the sealing resin 91 is formed so as to fill the gaps between the insulating films 25C. In other words, the sealing resin 91 is formed so as to directly cover a part of the surfaces of the insulating layers 51 to 57 and the adhesive layers 71 to 76. Thereby, since the volume of the sealing resin 91 containing the magnetic filler (for example, the sealing resin 91 in the through hole 23X) can be increased, the inductance of the inductor 90C can be improved. Further, since the substrate 30 is omitted, the entire inductor 90C can be thinned.

  In the present embodiment, the through hole 23X is an example of a first through hole, the through hole 52Y is an example of a second through hole, the through hole 72X is an example of a third through hole, the through hole 63X is an example of a fourth through hole, The hole 53X is an example of a fifth through hole, the through hole 62X is an example of a sixth through hole, the through hole 52X is an example of a seventh through hole, the through hole 71X is an example of an eighth through hole, and the through hole 51X is a ninth through hole. It is an example of a hole. The wiring 62 is an example of a first wiring, the wiring 63 is an example of a second wiring, the wiring 61 is an example of a third wiring, the insulating layer 52 is an example of a first insulating layer, the insulating layer 53 is an example of a second insulating layer, The layer 51 is an example of a third insulating layer. The adhesive layer 72 is an example of a first adhesive layer, the adhesive layer 71 is an example of a second adhesive layer, the via wirings V2 to V7 are examples of through electrodes, the via wiring V3 is an example of a first through electrode, and the via wiring V2 is a second one. It is an example of a penetration electrode.

Next, an example of a method for manufacturing the inductor 90C will be described.
First, in the steps shown in FIGS. 40A to 40C, a support film 101 having the same structure as the substrate 100 shown in FIG. 9 is prepared. That is, as shown in FIGS. 40 (a) and 40 (c), it has a block 11 provided with a plurality of individual regions A1 and an outer frame 13 formed so as to protrude outside the block 11. A support film 101 is prepared. As the support film 101, for example, a reel-like flexible insulating resin film can be used. As the support film 101, for example, polyphenylene sulfide, polyimide film, or polyethylene naphthalate film can be used. The thickness of the support film 101 can be about 12-50 micrometers, for example.

  Next, as in the step shown in FIG. 10, the semi-cured insulating layer 51 is laminated on the lower surface 101 </ b> A of the support film 101 located in the region excluding the outer frame 13 (that is, the block 11). Subsequently, as shown in FIGS. 40A and 40B, through-holes 51X penetrating the support film 101 and the insulating layer 51 in the thickness direction are formed by a press working method or a laser working method. Note that the sprocket hole 101X is formed in the support film 101 located on the outer frame 13 simultaneously with this step or before the insulating layer 51 is laminated.

  Next, in the step shown in FIG. 41A, a metal foil 161 is laminated on the lower surface of the semi-cured insulating layer 51. The metal foil 161 is formed so as to cover the entire lower surface of the insulating layer 51, for example. For example, the metal foil 161 is laminated on the lower surface of the semi-cured insulating layer 51 by thermocompression bonding. Thereafter, the semi-cured insulating layer 51 is cured by curing in a temperature atmosphere of about 150 ° C.

  Next, similarly to the steps shown in FIGS. 11B and 11C, the metal foil 161 is patterned by a subtractive method or the like. Specifically, as shown in FIGS. 41B and 41C, a metal layer 61E is formed on the lower surface of the insulating layer 51 located in each individual region A1, and is connected to one end of the metal layer 61E. A portion 61A is formed, and a metal layer 61D that is a dummy pattern is formed. Thereby, the structure 41 having the insulating layer 51, the metal layer 61E, and the connection portion 61A is laminated on the lower surface 101A of the support film 101. In this step, as shown in FIG. 41C, a metal layer 81 connected to the connecting portion 61A and the metal layer 61D is formed on the lower surface of the insulating layer 51 located in the connecting portion 12. In other words, in this step, the metal foil 161 shown in FIG. 41A is patterned to form the opening 201Y and the grooves 61Y and 61Z. In FIG. 41C, the insulating layer 51 exposed from the opening 201Y and the grooves 61Y and 61Z is shown in a satin pattern.

  Subsequently, in the step shown in FIG. 42A, the support film 101 shown in FIG. 41B is removed from the insulating layer 51. For example, the support film 101 is mechanically peeled from the insulating layer 51.

  Next, in the step shown in FIG. 42B, as in the step shown in FIG. 12, the insulating layer 52 having the through holes 52X and 52Y and the metal layers 62D, 62E, and 82 are formed on the lower surface 102A of the support film 102. The structure which laminated | stacked the metal foil which has in order is prepared. Subsequently, as in the process shown in FIG. 13A, a semi-cured adhesive layer 71 that covers the entire surface of the metal layers 62 </ b> D, 62 </ b> E, 82 is laminated on the lower surface of the insulating layer 52.

  Next, in the step shown in FIG. 42C, as in the step shown in FIG. 13B, the through hole 62X is formed in the metal layer 62E exposed from the through hole 52X, and in the adhesive layer 71, A through hole 71X communicating with the through hole 62X is formed. Thereafter, the structure in which the through holes 62X and 71X are formed is disposed above the structure 41 shown in FIG. 42A with the adhesive layer 71 facing downward. Thereby, the lower surface of the adhesive layer 71 and the upper surface of the insulating layer 51 are arranged to face each other.

  Subsequently, in the step illustrated in FIG. 42D, the structure 42 is stacked on the upper surface of the insulating layer 51 with the adhesive layer 71 interposed therebetween. That is, the structure 41 and the structure 42 are disposed to face each other with the adhesive layer 71 interposed therebetween, and the structure 42 is stacked on the upper surface of the insulating layer 51 so that the support film 102 is disposed on the outside. For example, the two structures shown in FIG. 42C are heated and pressurized from both the upper and lower surfaces by a vacuum press or the like. Then, the semi-cured adhesive layer 71 is pressed by the lower surface of the metal layer 62E and the upper surface of the insulating layer 51, and spreads in the planar direction. As a result, a part of the adhesive layer 71 extends into the through hole 51X, and the expanded adhesive layer 71 covers the inner surface of the through hole 51X. For this reason, a part of through-hole 71X is formed in the through-hole 51X.

  Next, the adhesive layer 71 is cured. At this time, the through hole 71X, the through hole 62X, and the through hole 52X communicate with each other. Therefore, a part of the upper surface of the metal layer 61E is exposed at the bottom of the through hole 71X. Thereafter, the support film 102 is removed from the insulating layer 52.

  Next, in the step shown in FIG. 43A, via wiring V2 filling the through holes 71X, 62X, and 52X is formed on the upper surface of the metal layer 61E exposed at the bottom of the through hole 71X. Thereby, the metal layer 61E and the metal layer 62E are connected in series via the via wiring V2. The via wiring V2 can be formed by, for example, an electrolytic plating method using the metal layer 81 and the metal layer 61E as a power feeding layer or a method such as filling with a metal paste.

Through the manufacturing process described above, in the stacked body in which the structure 41 and the structure 42 are stacked, the metal layer 61E, the via wiring V2, and the metal layer 62E are connected in series.
Subsequently, in the step illustrated in FIG. 43B, the structures 43 to 47 are stacked on the structure 42 as in the steps illustrated in FIGS. 15 to 25. Through the above manufacturing process, it is possible to manufacture a stacked body 23C in which a plurality of structures 41 to 47 are sequentially stacked in each individual region A1.

  Next, in the steps shown in FIGS. 44A and 44B, similarly to the steps shown in FIGS. 26 to 28, the metal layers 61E to 67E (see FIG. 43B) formed in the respective layers. Molded by die cutting or the like, and processed into wirings 61 to 67 having a shape constituting a part of a spiral coil. As shown in FIG. 44A, through this step, a through hole 23X is formed at a substantially central portion of the laminate 23C. By forming the through hole 23X, a part of each of the wirings 61 to 67 is exposed from the inner wall surface of the through hole 23X. As shown in FIG. 44 (b), an opening 20Y is formed at a required portion of each individual area A1, and the outer shape of the laminated body 23C is formed into a substantially rectangular shape. By forming the opening 20Y, a part of each of the wirings 61 to 67 is also exposed from the outer wall surface (side wall) of the stacked body 23C. FIG. 44 (b) shows a cross-sectional view of the coil substrate at a position corresponding to the line 44b-44b in FIG. 41 (c).

  Subsequently, in the steps shown in FIGS. 45A and 45B, an insulating film that covers the surfaces of the wirings 61 to 67 and the via wirings V7 and V8 exposed on the surface of the stacked body 23C by electrodeposition. 25C is formed. Specifically, the end surfaces of the wirings 62 to 67 exposed on the inner wall surface of the through hole 23X, the end surfaces of the wirings 62 to 67 exposed on the outer wall surface of the stacked body 23C, the lower surface and side surfaces of the wiring 61, and vias. An insulating film 25C that covers the upper surfaces of the wirings V7 and V8 is formed. At this time, since the insulating film 25C is formed by the electrodeposition method, the thickness of the insulating film 25C can be easily controlled. Thereby, the insulating film 25C can be formed as thin as possible. Furthermore, by using the electrodeposition method, the insulating film 25C can be selectively coated on the wirings 61 to 67 and the via wirings V7 and V8 with high accuracy. As a result, the formation region of the insulating film 25C can be minimized, and generation of voids in the insulating film 25C can be suitably suppressed. FIG. 45 (b) shows a cross-sectional view of the coil substrate at a position corresponding to the line 44b-44b in FIG. 41 (c).

  Thereafter, the inductor 90C shown in FIG. 39 can be manufactured by performing the same process as that shown in FIGS. 30 (b) to 31 (b). At this time, since the insulating film 25C is formed thin, the sealing resin 91 can be formed close to the wirings 61 to 67, and the volume of the sealing resin 91 can be increased. Thereby, the inductance of the inductor 90C can be improved.

(Modification of the third embodiment)
In the inductor 90C of the third embodiment, the insulating film 25 of the inductor 90A shown in FIG. 33 is changed to the insulating film 25C, but the other inductors 90 and 90B can be similarly modified.

  For example, as shown in FIG. 46, the insulating film 25 of the inductor 90 shown in FIG. 8B covers the surface of the conductor such as the wirings 61 to 67 and the via wiring V7 exposed on the surface of the multilayer body 23. The insulating film 25C may be changed.

  Further, as shown in FIG. 47, the insulating film 25 of the inductor 90B shown in FIG. 34 covers the surfaces of the conductors such as the wirings 62 to 67 and the via wirings V2 and V7 exposed on the surface of the multilayer body 23B. The insulating film 25C may be changed. The insulating film 25C at this time is formed so as to cover the lower surface of the via wiring V2.

Although illustration is omitted, the insulating film 25 may be similarly changed to the insulating film 25C in the inductor 90 shown in FIG.
(Fourth embodiment)
Next, a fourth embodiment will be described with reference to FIGS.

  In the stacked body 23D shown in FIGS. 48 and 49, a part of the via wirings V2 to V7 (only the via wirings V2, V3, V6, and V7 are shown in FIG. 48) are exposed on the inner wall surface of the through hole 23X. Yes. As shown in FIG. 49, in the laminated body 23D of this example, the planar shape of the through hole 23X is formed larger than, for example, the laminated body 23 shown in FIG. In the example shown in FIG. 49, a portion corresponding to approximately ¼ circle of the via wirings V2 to V8 formed in a substantially circular shape in plan view is cut out by the through hole 23X. That is, a part of the via wirings V2 to V8 is cut in the stacking direction by the through hole 23X. Thereby, the cut surfaces of the via wirings V2 to V8 are exposed on the inner wall surface of the through hole 23X. For example, as shown in FIG. 48, the cut surface (end surface) of the via wiring V2 that penetrates the insulating layers 51 and 52, the wiring 62, and the adhesive layer 71 in the thickness direction is exposed on the inner wall surface of the through hole 23X. Specifically, a cut surface (end surface) of the via wiring V2 from the upper surface of the wiring 61 to the lower surface of the adhesive layer 72 is exposed on the inner wall surface of the through hole 23X. In other words, the through holes 51X, 52X, 62X, 71X are formed in communication with the through hole 23X. A wiring 61 is provided directly below the via wiring V2 exposed on the inner wall surface of the through hole 23X. That is, the end surface of the via wiring V2 and the end surface of the wiring 61 formed immediately below the via wiring V2 are continuously exposed in the stacking direction on the inner wall surface of the through hole 23X. The other via wirings V3 to V8 and the wirings 62 to 67 are also exposed on the inner wall surface of the through hole 23X in the same manner as the via wiring V2 and the wiring 61.

  In the coil substrate 20 of this example, an insulating film 25D that covers the surface of the conductor exposed on the surface of the multilayer body 23D is formed. The insulating film 25D includes end surfaces of the wirings 62 to 67 exposed on the inner wall surface of the through hole 23X and end surfaces of the via wirings V2 to V8, an end surface of the wirings 62 to 67 exposed on the outer wall surface of the stacked body 23D, and The lower wiring 61 is formed so as to cover the lower surface and side surfaces of the lower wiring 61 and the uppermost via wirings V7 and V8 (only the via wiring V7 is shown in FIG. 48). The insulating films 25D covering the wirings 61 to 67 and the via wirings V2 to V8 are formed separately from each other. However, a part of the insulating film 25D is formed so as to continuously cover the wirings 61 to 67 and the via wirings V2 to V8 exposed continuously on the inner wall surface of the through hole 23X. The insulating film 25D is made of, for example, an electrodeposition resin formed by an electrodeposition method.

  In the inductor 90D having the multilayer body 23D, since the planar shape of the through hole 23X can be formed large, the volume of the sealing resin 91 formed in the through hole 23X can be increased. Thereby, since the volume of the sealing resin 91 containing the magnetic filler increases, the inductance of the inductor 90D can be improved.

Next, an example of a method for manufacturing the inductor 90D will be described.
First, in the step shown in FIG. 50A, a stacked body 23D in which a plurality of structures 41 to 47 are sequentially stacked is manufactured in the same manner as the steps shown in FIGS. 40A to 43B.

  Next, in the step shown in FIG. 50 (b), the metal layers 61E to 67E (see FIG. 50 (a)) formed in each layer are formed by die cutting or the like, as in the steps shown in FIGS. Then, the wirings 61 to 67 having a shape constituting a part of the spiral coil are processed. In this step, in the substantially central portion of the stacked body 23D, the via wirings V2 to V8 (only the via wirings V2, V3, V6, and V7 are shown in FIG. 50B) are overlapped in plan view. A through hole 23X is formed. By forming the through hole 23X, a part of each of the wirings 61 to 67 and the via wirings V2 to V8 is exposed from the inner wall surface of the through hole 23X. That is, a part of the via wirings V2 to V8 is cut in the stacking direction by the through hole 23X, and the cut surfaces of the via wirings V2 to V8 are exposed from the inner wall surface of the through hole 23X. In addition, as shown in FIG. 51A, in this step, openings 20Y are formed at required locations in the individual regions A1, and the outer shape of the stacked body 23D is formed into a substantially rectangular shape. By forming the opening 20Y, a part of each of the wirings 61 to 67 (only the wiring 67 is shown in FIG. 51A) is exposed from the outer wall surface of the stacked body 23D.

  Subsequently, in the step shown in FIG. 51B, an insulating film 25D that covers the surface of the conductor exposed on the surface of the multilayer body 23D is formed by electrodeposition. Specifically, the end surfaces of the wirings 62 to 67 and the via wirings V2 to V8 exposed on the inner wall surface of the through hole 23X, the end surfaces of the wirings 62 to 67 exposed on the outer wall surface of the stacked body 23D, and the wiring 61 An insulating film 25D is formed to cover the lower and side surfaces and the upper surfaces of the via wirings V7 and V8 (only the via wiring V7 is shown in FIG. 51B). At this time, since the insulating film 25D is formed by the electrodeposition method, the thickness of the insulating film 25D can be easily controlled. Furthermore, by employing the electrodeposition method, it is possible to suitably suppress the generation of voids in the insulating film 25D even when the formation region of the insulating film 25D is widened. FIG. 51 (b) shows a cross-sectional view of the coil substrate at a position corresponding to the line 51b-51b in FIG. 51 (a).

Thereafter, the same process as that shown in FIGS. 30B to 31B is performed, whereby the inductor 90D shown in FIG. 48 can be manufactured.
(Modification of the fourth embodiment)
In the inductor 90D of the fourth embodiment, the planar shape of the through hole 23X of the inductor 90C shown in FIG. 39 is formed large so that part of the via wirings V2 to V8 is exposed on the inner wall surface of the through hole 23X. However, the other inductors 90 and 90B can be similarly modified.

  For example, as shown in FIG. 52, a part of the via wirings V1 to V8 (only the via wirings V1 to V3, V6, and V7 are shown in FIG. 52) in the inductor 90 shown in FIG. 46 are exposed to the inner wall surface of the through hole 23X. You may make it make it.

  As shown in FIG. 53, a part of via wirings V2 to V8 (only the via wirings V2, V3, V6, and V7 are shown in FIG. 53) in the inductor 90B shown in FIG. 47 are formed on the inner wall surface of the through hole 23X. You may make it expose.

  In the inductors 90D, 90, and 90B shown in FIGS. 48, 52, and 53, the opening 20Y may be formed at a position that overlaps part of the via wirings V1 to V8 in plan view. That is, in the inductors 90D, 90, and 90B shown in FIGS. 48, 52, and 53, the cross sections (end faces) of the via wirings V1 to V7 may be exposed on the outer wall surfaces of the multilayer bodies 23D, 23, and 23B. . Thereby, it can contribute to size reduction of inductor 90D, 90, 90B.

  The insulating film 25D in the inductors 90D, 90, and 90B shown in FIGS. 48, 52, and 53 may be changed to the insulating film 25 that covers the entire surface of the multilayer bodies 23D, 23, and 23B.

(Other embodiments)
In addition, each said embodiment can also be implemented in the following aspects which changed this suitably.
-You may abbreviate | omit formation of the metal layers 81-87 in each said embodiment and said each modification.

-You may abbreviate | omit formation of the metal layers 61D-67D (dummy pattern) in said each embodiment and said each modification.
The insulating film 25 in the first and second embodiments and the insulating film 25D in the fourth embodiment may be omitted. For example, when the sealing resin 91 does not contain a magnetic material, the insulating film 25 that covers the coil substrate 20 becomes unnecessary, and therefore the insulating film 25 may be omitted. In this case, since the sealing resin 91 does not contain a magnetic substance that causes a short circuit, the sealing resin 91 can be formed directly on the coil substrate 20.

  The insulating layer 51 in the first embodiment may be omitted. In this case, in order to improve the adhesion between the substrate 30 and the wiring 61, it is preferable to subject the lower surface 30A of the substrate 30 to a surface treatment such as a plasma treatment. Even in this case, the insulation between the wiring 61 and the wiring 62 can be sufficiently secured by the substrate 30.

  -In each said embodiment and said each modification, the winding number of the wiring formed in one structure 41-47 can be combined arbitrarily. As in the above embodiment, about 1 turn of wiring and about 3/4 turn of wiring may be combined, or about 1 turn of wiring and about 1/2 turn of wiring may be combined. When about 3/4 turns of wiring is used, 4 types of patterns (in the example of the above embodiment, wirings 62, 63, 64, 65) are required, while about 1/2 turns are required. When wiring is used, it can be configured with only two types of wiring patterns.

DESCRIPTION OF SYMBOLS 10 Coil board | substrate 11 Block 12 Connection part 13 Outer frame 13X Sprocket hole 20 Coil board | substrate 20X Through-hole 23,23A-23D Laminate 23X Through-hole 25,25C, 25D Insulating film 30 Substrate 41-47 Structure 51-57 Insulating layer 52X 57X, 52Y-56Y Through-hole 61-67 Wiring 61A, 67A Connection 61Y, 61Z Groove 61E-67E Metal layer 62X-67X Through-hole 71-76 Adhesive layer 72X-76X Through-hole 90, 90A-90D Inductor 91 Sealing Resin 92,93 Electrode 101-107 Support film V1-V8 Via wiring A1 Individual area

Claims (13)

A laminate in which a plurality of structures having a wiring that becomes a part of a coil and an insulating layer formed on the wiring are stacked;
A first through hole penetrating the laminate in the thickness direction;
An insulating film covering the surface of the wiring exposed on the surface of the laminate,
The insulating film covers the end surface of the wiring exposed on the inner wall surface of the first through hole, and also exposes the end surface of the insulating layer exposed on the inner wall surface of the first through hole. And
The first through hole is filled with an insulating resin containing a magnetic material,
An inductor, wherein the wirings of the structures adjacent vertically are connected in series to form the spiral coil. The wirings adjacent to each other in the vertical direction are electrically connected through a through electrode,
2. The inductor according to claim 1, wherein the insulating film covers an end face of the through electrode exposed on an inner wall surface of the first through hole. The end surface of the through electrode and the end surface of the wiring formed immediately below the through electrode are continuously exposed from the inner wall surface of the first through hole in the stacking direction,
3. The inductor according to claim 2, wherein the insulating film continuously covers an end surface of the through electrode and an end surface of the wiring that are continuously exposed from an inner wall surface of the first through hole. .   The inductor according to claim 2, wherein the insulating film is formed so as to cover an end face of the through electrode exposed on an outer wall surface of the multilayer body.   5. The inductor according to claim 1, wherein the insulating film is formed so as to cover an end face of the wiring exposed on an outer wall surface of the multilayer body.   The inductor according to claim 1, wherein the insulating film is made of an electrodeposition resin. The plurality of structures are stacked via an adhesive layer,
The inductor according to claim 1, wherein the insulating layer and the adhesive layer exposed on the surface of the multilayer body are exposed from the insulating film. The laminate is
A first wiring;
A first insulating layer having a second through hole exposing a part of the upper surface of the first wiring, and being stacked on the upper surface of the first wiring;
A first adhesive layer having a third through hole communicating with the second through hole and laminated on the upper surface of the first insulating layer;
A second wiring having a fourth through hole communicating with the third through hole and laminated on an upper surface of the first adhesive layer;
A second insulating layer having a fifth through hole communicating with the fourth through hole and stacked on an upper surface of the second wiring;
A first through electrode filling the second through hole, the third through hole, the fourth through hole, and the fifth through hole;
The first wiring and the second wiring are connected in series via the first through electrode,
The inductor according to any one of claims 1 to 7, wherein the fifth through hole is formed to have a larger planar shape than the fourth through hole. The second through hole is formed to have a larger planar shape than the third through hole,
The first adhesive layer covers a part of the side surface of the second wiring, and covers the inner side surface of the second through hole,
The inductor according to claim 8, wherein a part of the third through hole is formed in the second through hole. The laminate is
A sixth through hole penetrating the first wiring in the thickness direction;
A seventh through-hole that penetrates the first insulating layer in the thickness direction and communicates with the sixth through-hole, and has a planar shape larger than the sixth through-hole,
A second adhesive layer having an eighth through hole communicating with the sixth through hole and laminated on a lower surface of the first wiring;
A third insulating layer having a ninth through hole communicating with the eighth through hole and laminated on a lower surface of the second adhesive layer;
A third wiring stacked on the lower surface of the third insulating layer and formed in the lowermost layer of the stacked body;
The sixth through hole, the seventh through hole, the eighth through hole, and the ninth through hole are formed on an upper surface of the third wiring exposed in the eighth through hole and the ninth through hole. A second through electrode filling
The insulating film covers a lower surface and a side surface of the third wiring;
The inductor according to claim 8 or 9, wherein the third wiring and the first wiring are connected in series via the second through electrode. A connection portion is provided at the end of the coil,
The connecting portion is exposed from the insulating film;
The insulating resin covers the laminated body and the insulating film except for the connection portion ,
The formed to cover the insulating resin, inductor according to any one of claims 1 to 10, characterized in that perforated the connection portion electrically connected to the electrodes. Preparing a plurality of structures having a metal layer and an insulating layer formed on the metal layer;
A step of sequentially laminating a plurality of the structures to form a laminate while connecting the metal layers of the structures adjacent to each other in series up and down;
Forming the laminate, processing the plurality of metal layers into a wiring having a shape constituting a part of the coil, forming the spiral coil in which the plurality of wirings are connected in series, and Forming a through-hole penetrating the laminate in the thickness direction;
Forming an insulating film covering an end face of the wiring exposed on the inner wall surface of the through hole by electrodeposition. In the step of forming the laminated body, the metal layers adjacent to each other in the vertical direction are electrically connected through a through electrode,
The method for manufacturing an inductor according to claim 12, wherein in the step of forming the insulating film, the insulating film is formed so as to cover a surface of the through electrode exposed on a surface of the multilayer body.