JP6549821B2 - Semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device.

  There has been proposed a semiconductor device which detects postures with respect to three axes in a three-dimensional space by providing a plurality of direction sensor elements utilizing geomagnetism. Patent Document 1 discloses a semiconductor device provided with a substrate and three direction sensor elements and integrated circuit elements mounted on the substrate. The three azimuth sensor elements have magnetic wires that constitute their respective detection reference axes. The three orientation sensor elements are mounted on the substrate such that the respective magnetic wires are in different directions, for example, in directions perpendicular to each other. Further, the integrated circuit element outputs the attitude of the semiconductor device with respect to the three axes as an electric signal by the outputs from the three direction sensor elements.

  However, in any of the three orientation sensor elements, generally, the detection reference axis coincides with the thickness direction of the substrate. The orientation sensor element having the detection reference axis is mounted in a posture standing up to the substrate. Conducting such an orientation sensor element with the substrate is more difficult than conducting the orientation sensor element mounted parallel to the substrate, and providing conduction more reliably and more stably. Desired.

  In addition, there is a strong demand for miniaturization of such semiconductor devices. Along with this, the orientation sensor element and also the mechanism constituting the detection reference axis are required to be compact. The mechanism that constitutes the detection reference axis comprises, for example, a magnetic wire and a coil wound around it. These magnetic wires and coils need to detect changes in attitude relative to the earth's magnetism as minute electrical changes, and are finely finished. For this reason, it is desirable that the mechanism be capable of sufficiently improving the detection accuracy of the direction with respect to the geomagnetism while achieving downsizing.

JP, 2009-300093, A

  The present invention is conceived under the above-described circumstances, and an object thereof is to provide a semiconductor device capable of more reliably and stably conducting a semiconductor element. Furthermore, another object of the present invention is to provide a magnetic element having a coil that contributes to functional improvement.

  The semiconductor device provided by the first aspect of the present invention is a semiconductor device provided with a semiconductor element having one or more element side pads and a wire having a bonding portion bonded to the element side pads, The semiconductor device has a reference surface and a bonding surface having an angle of less than 180 ° with the reference surface and at least a part of the device-side pad formed, and the bonding portion of the wire Is characterized in that it is provided at a position closer to the separation edge of the bonding surface located opposite to the boundary than the boundary between the reference surface and the bonding portion.

  In a preferred embodiment of the present invention, the device-side pad has a portion formed on the reference surface.

  In a preferred embodiment of the present invention, the device-side pad is formed by plating.

  In a preferred embodiment of the present invention, the element-side pad has a portion which becomes thinner from the separation edge toward the boundary.

  In a preferred embodiment of the present invention, the device-side pad has a plating main layer.

  In a preferred embodiment of the present invention, the main plating layer is made of Cu.

  In a preferred embodiment of the present invention, the main plating layer has a portion which becomes thinner from the separation edge toward the boundary.

  In a preferred embodiment of the present invention, the device-side pad has a plated surface layer stacked on the plating main layer.

  In a preferred embodiment of the present invention, an average thickness of the plating surface layer is thinner than an average thickness of the plating main layer.

  In a preferred embodiment of the present invention, the plated surface layer is made of Au.

  In a preferred embodiment of the present invention, the wire is made of Au.

  In a preferred embodiment of the present invention, the plated surface layer has a portion which becomes thinner from the separation edge toward the boundary.

  In a preferred embodiment of the present invention, the plating main layer has a portion near the boundary exposed from the plating surface layer.

  In a preferred embodiment of the present invention, the device-side pad has a plating underlayer interposed between the plating main layer and the bonding surface.

  In a preferred embodiment of the present invention, the plating underlayer is made of Cu.

  In a preferred embodiment of the present invention, the semiconductor device has a retraction side surface extending from the separation edge to a side opposite to the side to which the bonding surface faces.

  In a preferred embodiment of the present invention, the element-side pad has a portion formed on the retracting side surface.

  In a preferred embodiment of the present invention, the semiconductor device comprises a first main portion and a second main portion which are separate and joined to each other, and the reference surface is constituted by the first main portion. The bonding surface is constituted by the second main portion.

  In a preferred embodiment of the present invention, the first main part and the second main part are separate and joined to each other.

  In a preferred embodiment of the present invention, the first main portion is made of a semiconductor.

  In a preferred embodiment of the present invention, the second main portion is made of an insulator.

  In a preferred embodiment of the present invention, the second main portion is made of a resin.

  In a preferred embodiment of the present invention, the first main portion and the second main portion are integrally formed.

  In a preferred embodiment of the present invention, a substrate comprising: a substrate having a main surface and a back surface facing in opposite directions in the thickness direction; and a semiconductor pattern formed on the substrate and including the substrate-side pad And the semiconductor element is mounted on the main surface side.

  In a preferred embodiment of the present invention, the substrate has a substrate-side pad, and the wire is bonded to the substrate-side pad.

  In a preferred embodiment of the present invention, an integrated circuit element mounted on the substrate is provided.

  In a preferred embodiment of the present invention, the integrated circuit device has an additional device-side pad, and the wire is bonded to the additional device-side pad.

  In a preferred embodiment of the present invention, the substrate has a recess which sinks from the main surface to the back surface, and a part of the semiconductor element is accommodated in the recess.

  In a preferred embodiment of the present invention, the depressed portion has a bottom surface located between the main surface and the back surface in the thickness direction, and the semiconductor element is joined to the bottom surface. There is.

  In a preferred embodiment of the present invention, the depressed portion has an inner side surface connected to the main surface.

  In a preferred embodiment of the present invention, the inner side surface is inclined with respect to the thickness direction.

  In a preferred embodiment of the present invention, the depressed portion has a curved surface connecting the bottom surface and the inner surface.

  In a preferred embodiment of the present invention, the wiring pattern has an intermediate layer located between the main surface and the back surface in the thickness direction, and the intermediate layer is formed of the recess portion. It has the blocking part which constitutes the bottom.

  In a preferred embodiment of the present invention, the blocking portion is larger than the bottom surface in the thickness direction.

  In a preferred embodiment of the present invention, the base has a portion located on the back side with respect to the intermediate layer.

  In a preferred embodiment of the present invention, the wiring pattern has a plurality of back surface electrodes exposed on the back surface side.

  In a preferred embodiment of the present invention, any one of the plurality of back electrodes overlaps the blocking portion of the intermediate layer in the thickness direction.

  In a preferred embodiment of the present invention, the blocking portion and the plurality of back surface electrodes are mutually insulated.

  In a preferred embodiment of the present invention, the semiconductor device is an orientation sensor device in which a detection reference axis is built in the first main portion.

  The semiconductor device provided by the second aspect of the present invention is a semiconductor device provided with a substrate and an orientation sensor element having a detection reference axis, and the substrate faces one side in the thickness direction 1 The above-mentioned substrate side pad is provided, and the direction sensor element has a semiconductor portion in which the detection reference axis is formed and an auxiliary portion joined to the semiconductor portion, and the auxiliary portion is A pad surface facing the substrate-side pad, the semiconductor unit has a reference surface extending from an edge of the pad surface toward the substrate, and the orientation sensor element includes the pad The device pad is characterized in that at least a part is formed on the surface, and the device pad and the substrate pad are bonded by a conductive bonding material.

  In a preferred embodiment of the present invention, the device-side pad is formed from the pad surface to the reference surface.

  In a preferred embodiment of the present invention, the conductive bonding material is also bonded to a portion of the element-side pad formed on the reference surface.

  In a preferred embodiment of the present invention, the pad surface has a separation edge opposite to the reference surface, and the auxiliary portion is in a direction away from the substrate from the separation edge. The element side pad has a portion formed on the side surface.

  In a preferred embodiment of the present invention, the conductive bonding material is also bonded to a portion of the element-side pad formed on the retraction side surface.

  In a preferred embodiment of the present invention, the semiconductor portion has a bonding surface bonded to a substrate.

  In a preferred embodiment of the present invention, the joint surface is perpendicular to the reference surface.

  In a preferred embodiment of the present invention, the joint surface is perpendicular to the detection reference axis.

  In a preferred embodiment of the present invention, the substrate has a substrate having a main surface and a back surface facing each other in the thickness direction, a semiconductor pattern formed on the substrate and including the substrate-side pad, The substrate-side pad is formed on the main surface.

  In a preferred embodiment of the present invention, an integrated circuit element mounted on the substrate is further provided, and the wiring pattern is electrically connected to the substrate-side pad and is additionally connected to the integrated circuit element. It has a pad.

  In a preferred embodiment of the present invention, the integrated circuit element and the additional substrate pad are electrically connected via a wire.

  In a preferred embodiment of the present invention, the integrated circuit element and the additional substrate pad are electrically connected via a conductive bonding material.

  In a preferred embodiment of the present invention, the auxiliary portion is disposed on the same side as the integrated circuit element with respect to the semiconductor portion.

  In a preferred embodiment of the present invention, the auxiliary portion is disposed on the opposite side to the integrated circuit element with respect to the semiconductor portion.

  In a preferred embodiment of the present invention, the substrate has a depressed portion which is depressed from the main surface to the back surface side, and a part of the semiconductor portion is accommodated in the depressed portion.

  In a preferred embodiment of the present invention, the depressed portion has a bottom surface located between the main surface and the back surface in the thickness direction, and the semiconductor portion is joined to the bottom surface. There is.

  In a preferred embodiment of the present invention, the depressed portion has an inner side surface connected to the main surface.

  In a preferred embodiment of the present invention, the inner side surface is inclined with respect to the thickness direction.

  In a preferred embodiment of the present invention, the depressed portion has a curved surface connecting the bottom surface and the inner surface.

  In a preferred embodiment of the present invention, the wiring pattern has an intermediate layer located between the main surface and the back surface in the thickness direction, and the intermediate layer is formed of the recess portion. It has the blocking part which constitutes the bottom.

  In a preferred embodiment of the present invention, the blocking portion is larger than the bottom surface in the thickness direction.

  In a preferred embodiment of the present invention, the base has a portion located on the back side with respect to the intermediate layer.

  In a preferred embodiment of the present invention, the wiring pattern has a plurality of back surface electrodes exposed on the back surface side.

  In a preferred embodiment of the present invention, any one of the plurality of back electrodes overlaps the blocking portion of the intermediate layer in the thickness direction.

  In a preferred embodiment of the present invention, the blocking portion and the plurality of back surface electrodes are mutually insulated.

  In a preferred embodiment of the present invention, one or more additional orientation sensor elements having a detection reference axis in a direction different from the detection reference axis of the orientation sensor element are provided.

  In a preferred embodiment of the present invention, the additional orientation sensor element is mounted on the integrated circuit element.

  In a preferred embodiment of the present invention, the conductive bonding material is a solder.

  A magnetic element provided by the third aspect of the present invention includes a support substrate, a magnetic wire supported by the support substrate and extending in a first direction, insulated with respect to the magnetic wire, and the magnetic material A coil wound around a wire, wherein the coil is formed on the support substrate and located on the support substrate side in a second direction which is a thickness direction of the support substrate Anti-support constituted by a plurality of conductor wires, each end of which is joined to the side of the support substrate and a plurality of conductor wires located on the opposite side to the side of the support substrate across the magnetic wire in the second direction And a substrate side portion.

  In a preferred embodiment of the present invention, the support substrate side portion is a part of a wiring pattern formed on the support substrate.

  In a preferred embodiment of the present invention, the support substrate side includes a pair of pad portions and a connecting portion connecting the pad portions, and a plurality of pads arranged in the first direction. It consists of a coil element.

  In a preferred embodiment of the present invention, each wire is bonded to one of the pad portions of one of the coil elements and to one of the pad portions of another coil element different from the coil element. .

  In a preferred embodiment of the present invention, at least one of the plurality of wires includes one of the pad portions of one of the coil elements and one of the pad portions of another coil element adjacent to the coil element. Bonded to

  In a preferred embodiment of the present invention, at least one of the plurality of wires is in the first direction sandwiching one of the pad portions of one of the coil elements and another coil element adjacent to the coil element. Is bonded to one of the pad portions of the further coil element spaced apart from each other.

  In a preferred embodiment of the present invention, the magnetic wire is covered, and an insulating portion interposed between the magnetic wire and the coil is provided.

  In a preferred embodiment of the present invention, the insulating portion has a support substrate side insulating portion interposed between the magnetic wire and the support substrate side portion of the coil.

  In a preferred embodiment of the present invention, the supporting substrate side insulating portion has a uniform thickness.

  In a preferred embodiment of the present invention, the insulating portion has a non-supporting substrate side insulating portion interposed between the magnetic wire and the non-supporting substrate side of the coil.

  In a preferred embodiment of the present invention, the non-supporting substrate side insulating portion has a shape in which a cross-sectional shape in a plane perpendicular to the first direction bulges to a side away from the supporting substrate.

  In a preferred embodiment of the present invention, the support substrate has a reference surface.

  In a preferred embodiment of the present invention, the support substrate side portion of the coil is all formed on the reference surface.

  In a preferred embodiment of the present invention, the support substrate has a groove recessed from the reference surface, and at least a part of the support substrate side portion of the coil is formed in the groove.

  In a preferred embodiment of the present invention, at least a part of the magnetic wire is accommodated in the groove.

  In a preferred embodiment of the present invention, the pair of pad portions of the plurality of coil elements are formed on the reference surface.

  In a preferred embodiment of the present invention, a part of the connection portion of the plurality of coil elements is formed in the groove portion.

  In a preferred embodiment of the present invention, the support substrate is made of nonmagnetic material.

  In a preferred embodiment of the present invention, the support substrate is made of Si or a ceramic.

  In a preferred embodiment of the present invention, the magnetic wire is made of amorphous.

  In a preferred embodiment of the present invention, the conductor wire is made of any one of Au, Cu, Al and Ag.

  In a preferred embodiment of the present invention, the magnetic wire is configured as an orientation sensor element that forms a detection reference axis.

  Other features and advantages of the present invention will become more apparent from the detailed description given below with reference to the accompanying drawings.

FIG. 1 is a perspective view showing a semiconductor device based on a first embodiment of the present invention. It is a principal part top view which shows the semiconductor device of FIG. It is a bottom view which shows the semiconductor device of FIG. It is sectional drawing in alignment with the IV-IV line of FIG. It is a principal part expanded sectional view which shows the semiconductor device of FIG. It is sectional drawing in alignment with the VV line | wire of FIG. It is sectional drawing in alignment with the VI-VI line of FIG. It is sectional drawing in alignment with the VII-VII line of FIG. It is a perspective view which shows the board | substrate used for the semiconductor device of FIG. It is a top view which shows the board | substrate of FIG. It is sectional drawing which follows the XI-XI line of FIG. It is sectional drawing in alignment with the XII-XII line of FIG. FIG. 10 is a perspective view showing a substrate material used to manufacture the substrate of FIG. 9; It is a perspective view which shows the process of removing a part of base material in the manufacturing method of the board | substrate of FIG. FIG. 7 is an enlarged sectional view of an essential part showing a manufacturing process of an orientation sensor element of the semiconductor device of FIG. 1; FIG. 7 is an enlarged sectional view of an essential part showing a manufacturing process of an orientation sensor element of the semiconductor device of FIG. 1; FIG. 7 is an enlarged sectional view of an essential part showing a manufacturing process of an orientation sensor element of the semiconductor device of FIG. 1; FIG. 7 is an enlarged sectional view of an essential part showing a manufacturing process of an orientation sensor element of the semiconductor device of FIG. 1; FIG. 7 is an enlarged sectional view of an essential part showing a manufacturing process of an orientation sensor element of the semiconductor device of FIG. 1; FIG. 7 is an enlarged sectional view of an essential part showing a manufacturing process of an orientation sensor element of the semiconductor device of FIG. 1; FIG. 16 is an enlarged cross-sectional view of a main part showing a modification of the semiconductor device of FIG. FIG. 16 is an enlarged sectional view of a main part showing another modification of the semiconductor device of FIG. 1; FIG. 16 is an enlarged sectional view of a main part showing another modification of the semiconductor device of FIG. 1; FIG. 16 is an enlarged sectional view of a main part showing another modification of the semiconductor device of FIG. 1; FIG. 16 is an enlarged sectional view of a main part showing another modification of the semiconductor device of FIG. 1; FIG. 16 is an enlarged sectional view of a main part showing another modification of the semiconductor device of FIG. 1; FIG. 20 is a cross-sectional view showing another modified example of the semiconductor device of FIG. 1; It is a perspective view showing a semiconductor device based on a second embodiment of the present invention. It is sectional drawing in alignment with the XXIX-XXIX line of FIG. FIG. 29 is an enlarged sectional view of an essential part showing the semiconductor device of FIG. 28. . FIG. 29 is a cross-sectional view showing a modification of the semiconductor device of FIG. 28. FIG. 29 is a cross-sectional view showing a modification of the semiconductor device of FIG. 28. FIG. 29 is a cross-sectional view showing a modification of the semiconductor device of FIG. 28. It is a principal part expanded sectional view showing an example of a direction sensor element concerning the present invention. It is a principal part top view which shows the direction sensor element of FIG. It is principal part sectional drawing which follows the XXXVI-XXXVI line of FIG. It is principal part sectional drawing which follows the XXXVII-XXXVII line of FIG. It is principal part sectional drawing which shows an example of the manufacturing method of the direction sensor element of FIG. It is principal part sectional drawing which shows an example of the manufacturing method of the direction sensor element of FIG. It is principal part sectional drawing which shows an example of the manufacturing method of the direction sensor element of FIG. It is principal part sectional drawing which shows an example of the manufacturing method of the direction sensor element of FIG. It is principal part sectional drawing which shows an example of the manufacturing method of the direction sensor element of FIG. It is principal part sectional drawing which shows the deformability of the direction sensor element of FIG. It is principal part sectional drawing which shows the other deformability of the direction sensor element of FIG. It is a principal part top view which shows the other deformability of the direction sensor element of FIG.

  Hereinafter, preferred embodiments of the present invention will be specifically described with reference to the drawings.

  1 to 8 show a semiconductor device according to a first embodiment of the present invention. The semiconductor device 101A of the present embodiment includes a substrate 1, a first orientation sensor element 2, a second orientation sensor element 3, a third orientation sensor element 4, an integrated circuit element 5, a first wire 61, a second wire 62, a third A wire 63, a fourth wire 64, a fifth wire 65 and a sealing resin 7 are provided. The semiconductor device 101A is configured to be able to detect attitudes with respect to three axes of x-axis, y-axis and z-axis in a three-dimensional space using geomagnetism, and output the detection result as an electric signal. In the present embodiment, the semiconductor device 101A is a rectangular parallelepiped, and for example, the dimensions in the x direction and the y direction are about 2.0 mm, and the dimensions in the z direction are about 0.8 mm.

  FIG. 1 is a perspective view showing a semiconductor device 101A. FIG. 2 is a plan view of relevant parts showing the semiconductor device 101A. FIG. 3 is a bottom view showing the semiconductor device 101A. FIG. 4 is a cross-sectional view in the zx plane along the line IV-IV in FIG. 2, and FIG. 6 is a cross-sectional view in the zx plane along the line VI-VI in FIG. 7 is a cross-sectional view in the yz plane along the line VII-VII in FIG. FIG. 8 is a cross-sectional view in the yz plane along the line VIII-VIII in FIG. In FIG. 1, for convenience of understanding, the sealing resin 7 is shown by an imaginary line, and the sealing resin 7 is omitted in FIG.

  The substrate 1 supports the first direction sensor element 2, the second direction sensor element 3, the third direction sensor element 4 and the integrated circuit element 5, and is a base of the semiconductor device 101A. In the present embodiment, the substrate 1 includes the base 11 and the wiring pattern 12. Further, the substrate 1 has a main surface 111, a back surface 112, a substrate side outer surface 113, and a depressed portion 114. In the present embodiment, the substrate 1 has a rectangular shape, and for example, the dimensions in the x direction and the y direction are about 2.0 mm, and the dimensions in the z direction are about 0.23 mm.

  The main surface 111 and the back surface 112 face each other in the z direction, which is the thickness direction of the substrate 1, opposite to each other, the main surface 111 is a surface facing upward in the z direction, and the back surface 112 faces downward in the z direction It is a face. The substrate side outer side surface 113 is a surface connecting the main surface 111 and the back surface 112, and in the present embodiment, it faces the x direction and the y direction, and is parallel to the z direction.

  The depressed portion 114 is a portion depressed from the main surface 111 to the back surface 112 side. In the present embodiment, as well shown in FIG. 2, the depressed portion 114 is formed at the left end of the substrate 1 in the x direction, and opens only to the left in the x direction. Closed in three directions in both directions. The depressed portion 114 has a substantially rectangular shape in the z direction, for example, the dimension in the x direction is about 0.5 mm, the dimension in the y direction is about 1.0 mm, and the depth in the z direction is about 0.15 mm.

  9 to 12 show a single substrate 1 used for the semiconductor device 101A. As shown in these figures, the recess 114 has a bottom surface 115, an inner surface 116 and a curved surface 117. The bottom surface 115 is located between the major surface 111 and the back surface 112 in the z direction, and faces upward in the z direction. In the present embodiment, the bottom surface 115 is a flat smooth surface. The inner side surface 116 is connected to the main surface 111, and in the present embodiment, it is shaped like a U in the z direction. In the present embodiment, the inner side surface 116 is inclined with respect to the z direction so as to be separated from the center of the bottom surface 115 in plan view as it goes upward in the z direction. The inner side surface 116 connects the inner side surface 116 and the bottom surface 115, and is a concave surface.

  The substrate 11 is made of an insulating material, and in the present embodiment, is made of, for example, a glass epoxy resin. The wiring pattern 12 is made of metal and, for example, has a structure in which Cu, Ni, and Au are stacked. The wiring pattern 12 has a main surface layer 13, an intermediate layer 14 and a plurality of back surface electrodes 15. The substrate 1 is a multilayer substrate in which a base 11, a main surface layer 13, an intermediate layer 14 and a plurality of back electrodes 15 are stacked.

  The main surface layer 13 is exposed to the main surface 111 side, and has a plurality of substrate side pads 131. From the plurality of substrate pads 131, strip portions forming a conduction path extend. In the present embodiment, the plurality of substrate pads 131 are disposed in the vicinity of the right side of the substrate 11 in the x direction and the two sides on both sides in the y direction.

  The intermediate layer 14 is a layer provided inside the substrate 11 in the z direction. In the present embodiment, two intermediate layers 14 spaced in the z direction are provided. The intermediate layer 14, the main surface layer 13, and the plurality of back electrodes 15 are electrically connected to each other by a portion that penetrates a portion of the substrate 11 in the z direction, which is called a through hole electrode or a via electrode. ing.

  Of the two intermediate layers 14 that are located below in the z direction, the blocking portion 141 is included. The blocking portion 141 is larger than the depression 114 in the z direction, and overlaps with all the depressions 114. Further, the z-direction upper surface of the blocking portion 141 constitutes all of the bottom surface 115 of the depressed portion 114. In the present embodiment, the blocking portion 141 has a rectangular shape. Further, the blocking portion 141 is not electrically connected to any portion of the wiring pattern 12 other than the blocking portion 141, and is insulated from these portions.

  The plurality of back surface electrodes 15 are exposed on the back surface 112 side, and are used, for example, when mounting the semiconductor device 101A on a circuit board or the like. As shown in FIG. 3, in the present embodiment, eight back electrodes 15 are disposed along the four sides of the base 11. The two back electrodes 15 located on the left in the x direction in the figure overlap the blocking portion 141 of the wiring pattern 12 in the z direction, and are located below the blocking portion 141 in the z direction.

  Here, a method of manufacturing the substrate 1 will be described with reference to FIGS. 13 and 14.

  FIG. 13 is a perspective view showing a substrate material 10 used for manufacturing the substrate 1. The substrate material 10 has a base 11 and a wiring pattern 12. The base 11 and the wiring pattern 12 have a configuration similar to that described above. However, the depression 114 is not yet formed in the substrate material 10. For this reason, the substrate 11 has a uniform thickness. In addition, the blocking portion 141 of the wiring pattern 12 is disposed in the base material 11, and the upper surface in the z direction is covered with the substrate material 10. In addition, the same figure has shown only the part used as the board | substrate 1 among the board | substrate materials 10. FIG. For example, one may be manufactured using a substrate material 10 that is even larger than the substrate material 10 shown. In this case, for example, it is preferable to adopt a larger-sized blocking portion 141 extended to the left in the x direction.

  Next, as shown in FIG. 14, the substrate 11 is irradiated with the laser light L from the main surface 111 side. The laser light L is light of a wavelength that can be absorbed by the substrate 11. By absorbing the laser beam L, the portion of the substrate 11 irradiated with the laser beam L is instantaneously heated to a high temperature and removed. The irradiation of the laser light L is performed on a region of the base material 11 which is a portion overlapping with the blocking portion 141 in the z-direction view and which has a smaller area than the blocking portion 141. The blocking portion 141 is made of metal and made of a material that reflects the laser light L relatively. For example, when the laser beam L is a YAG laser, Cu is preferable as the material of the blocking portion 141. Thus, only the base material 11 is removed by the laser light L, and the blocking portion 141 is exposed. Thus, the depression 114 is formed. Further, the z-direction upper surface of the blocking portion 141 is the bottom surface 115 of the blocking portion 141.

  The laser light L is condensed on the base 11 by an optical system (not shown). For this reason, the laser light L is typically in the shape of a cone that becomes smaller toward the bottom. Therefore, in the recess 114, the inner side surface 116 inclined with respect to the z direction is formed corresponding to the conical shape of the laser beam L. In addition, a smooth curved surface 117 is formed between the inner side surface 116 and the bottom surface 115.

  The integrated circuit element 5 is for controlling an azimuth detection process using the first azimuth sensor element 2, the second azimuth sensor element 3 and the third azimuth sensor element 4. In the present embodiment, the integrated circuit device 5 is configured as a so-called ASIC (Application Specific Integrated Circuit) device, and its thickness is about 80 to 100 μm.

  The integrated circuit element 5 is supported by the main surface 111 of the substrate 1 and is bonded to the main surface 111 by a bonding material 53. The integrated circuit element 5 entirely overlaps with the main surface 111 in the z direction, and does not overlap with the depression 114.

  A plurality of element side pads 52 are formed on the upper surface of the integrated circuit element 5 in the z direction in the drawing. For example, the surface of the plurality of element side pads 52 is made of Au, and in the present embodiment, the element side pads 52 are arranged along three of four sides of the integrated circuit element 5 in the z direction.

  The first direction sensor element 2, the second direction sensor element 3 and the third direction sensor element 4 have detection reference axes along different directions, and are used, for example, to detect the attitude of the semiconductor device 101A with respect to geomagnetism. Be In the present embodiment, the first orientation sensor element 2 has the magnetic wire 21, the second orientation sensor element 3 has the magnetic wire 31, and the third orientation sensor element 4 has the magnetic material. It has a wire 41. The magnetic wire 21, the magnetic wire 31 and the magnetic wire 41 are rod-like members made of metal extending in a predetermined direction, and the longitudinal direction of these is a first orientation sensor element 2, a second orientation sensor element 3 and a third This corresponds to the detection reference axis of the direction sensor element 4. The first orientation sensor element 2, the second orientation sensor element 3 and the third orientation sensor element 4 further include coils (not shown) formed so as to surround the magnetic wire 21, the magnetic wire 31 and the magnetic wire 41. Have. The dimensions of the first orientation sensor element 2, the second orientation sensor element 3 and the third orientation sensor element 4 in the extending direction of the magnetic wire 21, the magnetic wire 31 and the magnetic wire 41 are, for example, about 0.6 mm.

  The first direction sensor element 2 is bonded to the bottom surface 115 of the blocking portion 141 by a bonding material 23. The first orientation sensor element 2 is mounted in a posture in which the magnetic wires 21 are parallel to the z direction. With such a mounting form, the lower portion of the first orientation sensor element 2 overlaps the blocking portion 141 in the z direction, and is accommodated in the blocking portion 141. The z-direction upper portion of the first orientation sensor element 2 protrudes upward in the z-direction from the blocking portion 141. Four element side pads 22 are formed in the first direction sensor element 2. The four element side pads 22 are disposed slightly below the upper end of the first direction sensor element 2 in the z direction, and have a portion directed upward in the z direction. The first direction sensor element 2 corresponds to an example of the semiconductor element in the first aspect of the present invention.

  In the present embodiment, the first azimuth sensor element 2 is composed of a first main portion 201A and a second main portion 202A. The first main portion 201A is made of a semiconductor such as Si, for example, and the magnetic wire 21 is embedded therein. The second main portion 202A is made of, for example, an insulator such as a resin. The first main portion 201A and the second main portion 202A are separate from each other, and are bonded by a bonding material 203 as shown in FIG.

  The first orientation sensor element 2 has a reference surface 211, a bonding surface 212A and a retracting side surface 215. The reference surface 211 is parallel to the yz plane, and in FIG. 5, is directed to the right in the x direction. The reference surface 211 is configured by the first main portion 201A. The bonding surface 212A is parallel to the xy plane and is directed upward in the z direction in FIG. The bonding surface 212A is configured by the second main portion 202A. The angle α between the reference surface 211 and the bonding surface 212A is 90 ° in this example. In the present invention, the angle α is set to less than 180 °. A boundary 213 is set between the reference surface 211 and the bonding surface 212A. The boundary 213 substantially divides the reference surface 211 and the bonding surface 212A, but is not limited to one constituted only by the reference surface 211 and the bonding surface 212A. For example, in the illustrated example, the boundary 213 is constituted by the bonding material 203.

  A separation edge 214 is set on the opposite side to the boundary 213 of the bonding surface 212A. The separation edge 214 is an edge separated from the boundary 213. The retreating side surface 215 extends from the separation edge 214 on the opposite side to the side to which the bonding surface 212A faces, that is, downward in the z-direction in FIG. The angle β between the bonding surface 212A and the retracting side surface 215 is 270 ° in this example. In the present invention, the angle α is set to an angle larger than 180 °.

  As shown in FIG. 5, the element-side pad 22 has a portion formed on the bonding surface 212A. Furthermore, in the present example, the element-side pad 22 is formed in a region extending from the boundary 213 to the separation edge 214 in the x-direction. The element-side pad 22 also has a portion formed on the reference surface 211. A portion of the element-side pad 22 formed on the reference surface 211 extends upward from the boundary 213 in the z direction. Thus, the boundary 213 is covered with the element-side pad 22. In the present example, the element-side pad 22 does not reach the upper end of the first main portion 201A in the z direction. The element-side pad 22 also has a portion formed on the retracting side surface 215. A portion of the element-side pad 22 formed on the retracting side surface 215 extends downward from the separation edge 214 in the z direction. Thus, the separation edge 214 is covered by the element-side pad 22.

  In this example, the element-side pad 22 has a configuration in which the plating base layer 221, the plating main layer 222, and the plating surface layer 223 are stacked. The plated base layer 221 is a layer directly formed on the first main portion 201A and the second main portion 202A, and is made of, for example, Cu. Plated base layer 221 is formed, for example, by electroless plating. The thickness of plating base layer 221 is, for example, 0.5 μm to 5 μm. The plating main layer 222 is laminated on the plating base layer 221 and is made of, for example, Cu. The plating main layer 222 is formed, for example, by electrolytic plating. The thickness of the plating main layer 222 is, for example, 7 μm to 20 μm. The plating surface layer 223 is laminated on the plating main layer 222 and is made of, for example, Au. Plated surface layer 223 is formed, for example, by electrolytic plating. The thickness of the plating surface layer 223 is, for example, 0.1 μm to 3 μm. That is, the average thickness of the plating surface layer 223 is thinner than the average thickness of the plating main layer 222.

  The portion of the element-side pad 22 formed on the bonding surface 212A has a portion which becomes thinner from the separation edge 214 toward the boundary 213 in the x-direction. This includes a configuration in which the entire portion of the element-side pad 22 formed on the bonding surface 212A becomes thinner toward the boundary 213 from the separation edge 214 in the x direction. Further, a portion of the element-side pad 22 formed on the reference surface 211 has a portion which becomes thinner toward the boundary 213 in the z direction. In the example shown in FIG. 5, the change in thickness is remarkable in the portion near the boundary 213 in the element-side pad 22. On the other hand, the portion of the element-side pad 22 formed on the retracting side surface 215 has a substantially uniform thickness.

  The plating underlayer 221 has a relatively small variation in thickness. The plating main layer 222 has portions which become thinner toward the boundary 213 in portions formed on the bonding surface 212A and the reference surface 211, respectively. The plated surface layer 223 also has a portion which becomes thinner toward the boundary 213 in each of the portions formed on the bonding surface 212A and the reference surface 211. In particular, in the example shown in FIG. 5, the thickness of the plating surface layer 223 is almost zero in a region extending from the boundary 213 slightly away in the x and z directions. Thereby, the plating main layer 222 can be exposed from the plating surface layer 223.

  Here, an example of the manufacturing process of the element-side pad 22 will be described below with reference to FIGS.

  First, the second main portion 202A is bonded to the first main portion 201A in which the magnetic wire 21 is formed by the bonding material 203. In the illustrated example, the first main portion 201A is sized to form a plurality of first direction sensor elements 2. Next, a plating base layer 221 made of Cu is formed, for example, by electroless plating in a region including the reference surface 211, the bonding surface 212A, and the retraction side surface 215.

  Next, as shown in FIG. 16, a mask layer 261 is formed. The mask layer 261 exposes a part of the plating base layer 221.

  Next, as shown in FIG. 17, a plating main layer 222 is formed. The plating main layer 222 is formed, for example, by forming a Cu layer on a portion of the plating base layer 221 exposed from the mask layer 261 by electrolytic plating using the plating base layer 221. At this time, since the angle α is 90 ° in the present example, the plating solution to be provided for the electrolytic plating may stay in the vicinity of the boundary 213. Due to this stagnation, the plating main layer 222 having a portion with a thinner thickness as it gets closer to the boundary 213 is formed. On the other hand, since the plating solution hardly stagnates on the retreating side surface 215, the thickness of the plating main layer 222 is substantially uniform.

  Next, as shown in FIG. 18, a plated surface layer 223 is formed. The formation of the plating surface layer 223 is performed by forming a layer of Au on the plating main layer 222, for example, by electrolytic plating using the plating base layer 221 and the plating main layer 222. At this time, since the angle α is 90 ° in the present example, the plating solution to be provided for the electrolytic plating may stay in the vicinity of the boundary 213. Due to this stagnation, a plated surface layer 223 having a portion with a smaller thickness as it gets closer to the boundary 213 is formed. The thickness distribution of the plated surface layer 223 depends on the plating conditions including the degree of convection of the plating solution. In the present embodiment, in the vicinity of the boundary 213, the thickness of the plating surface layer 223 is substantially zero, and a part of the plating main layer 222 may be exposed from the plating surface layer 223.

  Next, as shown in FIG. 19, the mask layer 261 is removed. In addition, portions of the plating underlayer 221 exposed from the plating main layer 222 and the plating surface layer 223 are removed by etching or the like. The element-side pad 22 having a configuration in which the plating base layer 221, the plating main layer 222, and the plating surface layer 223 are stacked can be obtained through the above steps.

  The second direction sensor element 3 is bonded to the upper surface of the integrated circuit element 5 in the z direction in the drawing by a bonding material 33. The second orientation sensor element 3 is mounted in a posture in which the magnetic wire 31 is parallel to the y direction. The second azimuth sensor element 3 entirely overlaps the integrated circuit element 5 in the z direction. Four element side pads 32 are formed in the second orientation sensor element 3. The four element side pads 32 are arranged in a line along the y direction and face upward in the z direction. The surface of the device side pad 32 is made of, for example, Au.

  The third direction sensor element 4 is bonded to the upper surface of the integrated circuit element 5 in the z direction in the drawing by a bonding material 43. The third orientation sensor element 4 is mounted in a posture in which the magnetic wires 41 are parallel to the x direction. The third direction sensor element 4 entirely overlaps the integrated circuit element 5 in the z direction. Four element-side pads 42 are formed in the third orientation sensor element 4. The four element side pads 42 are arranged in a line along the x direction, and face upward in the z direction. The surface of the element side pad 42 is made of, for example, Au.

  The first wire 61 connects the element-side pad 22 of the first direction sensor element 2 and the element-side pad 52 of the integrated circuit element 5 and is made of, for example, Au. As shown in FIG. 5, the first bonding portion 611 of the first wire 61 is connected to the element-side pad 22 of the first orientation sensor element 2. The position where the first wire 61 is bonded to the element-side pad 22, in this example, the center position of the first bonding portion 611 is spaced apart from the boundary 213 in the x direction, and is disposed closer to the separated edge 214 ing. The plated surface layer 223 of the element-side pad 22 has a substantially zero thickness in a region near the boundary 213 and may expose a part of the plating main layer 222. In this example, the first bonding portion 611 is The plated surface layer 223 is bonded to the area formed reliably.

  Further, as shown in FIG. 4, the second bonding portion of the first wire 61 is connected to the element-side pad 52 of the integrated circuit element 5 via the bump. The bumps are formed by melting the tip of the wire made of Au prior to the bonding of the first wire 61 and adhering the molten ball to the element-side pad 52.

  The second wire 62 connects the element-side pad 22 of the first orientation sensor element 2 and the substrate-side pad 131 of the substrate 1 and is made of, for example, Au. The first bonding portion of the second wire 62 is connected to the element-side pad 22 of the first orientation sensor element 2. In addition, the second bonding portion of the second wire 62 is connected to the substrate-side pad 131 of the substrate 1. No bump is interposed between the second bonding portion of the second wire 62 and the substrate-side pad 131.

  The third wire 63 connects the element-side pad 32 of the second orientation sensor element 3 or the element-side pad 42 of the third orientation sensor element 4 to the element-side pad 52 of the integrated circuit element 5. . As shown in FIG. 5, the first bonding portion of the third wire 63 is connected to the element-side pad 52 of the integrated circuit element 5. The second bonding portion of the third wire 63 is connected to the element-side pad 32 of the second orientation sensor element 3 or the element-side pad 42 of the third orientation sensor element 4 via a bump. The bumps are formed by melting the tip of the wire made of Au prior to the bonding of the third wire 63 and attaching the molten ball to the element side pad 32 or the element side pad 42.

  The fourth wire 64 connects the element-side pad 42 of the third orientation sensor element 4 and the substrate-side pad 131 of the substrate 1 and is made of, for example, Au. As shown in FIG. 4, the first bonding portion of the fourth wire 64 is connected to the substrate-side pad 131 of the substrate 1. The second bonding portion of the fourth wire 64 is connected to the element-side pad 42 of the third orientation sensor element 4 via a bump. The bumps are formed by melting the tip of the Au wire prior to the bonding of the fourth wire 64 and adhering the molten ball to the element-side pad 42.

  The fifth wire 65 connects the element-side pad 52 of the integrated circuit element 5 and the substrate-side pad 131 of the substrate 1 and is made of, for example, Au. The first bonding portion of the fifth wire 65 is connected to the element-side pad 52 of the integrated circuit element 5. In addition, the second bonding portion of the fifth wire 65 is connected to the substrate-side pad 131 of the substrate 1. No bump is interposed between the second bonding portion of the fifth wire 65 and the substrate-side pad 131.

  As shown in FIG. 2, a plurality of substrate pads 131 are formed on the main surface 111 on both sides of the depressed portion 114 on both sides in the y direction. Wires 65 are bonded.

  The sealing resin 7 includes the first orientation sensor element 2, the second orientation sensor element 3, the third orientation sensor element 4, the integrated circuit element 5, the first wire 61, the second wire 62, the third wire 63, and the fourth wire 64 and the fifth wire 65 are covered. Further, a part of the sealing resin 7 is filled in the depressed portion 114. Examples of the material of the sealing resin 7 include epoxy resin, phenol resin, polyimide resin, polybenzoxazole (PBO) resin, and silicone resin.

  The sealing resin 7 has a sealing resin side outer surface 71. The sealing resin side outer surface 71 faces the x direction and the y direction, and is parallel to the z direction. Further, in the present embodiment, the sealing resin side outer side surface 71 is flush with the substrate side outer side surface 113 of the substrate 1.

  Next, the operation of the semiconductor device 101A will be described.

  According to the present embodiment, as shown in FIG. 5, the first bonding portion 611 of the first wire 61 is provided at a position close to the separation edge 214 located on the opposite side to the boundary 213. In the process of manufacturing the element-side pad 22 described with reference to FIGS. 15 to 20, the thickness of the element-side pad 22 may be uneven due to the stagnation of the plating solution. Thus, the element-side pad 22 has a portion which becomes thinner toward the boundary 213. By providing the first bonding portion 611 at the above-described position, it is possible to avoid bonding the first wire 61 to the extremely thin portion of the element-side pad 22. Therefore, it is possible to bond the first wire 61 and the element-side pad 22 more firmly, and the first orientation sensor element 2 and the substrate 1 can be more reliably conducted.

  By separating the first main portion 201A and the second main portion 202A from each other, the magnetic wire 21 built in the first main portion 201A is erected along the z direction, and insulating toward the upper surface in the z direction The bonding surface 212A made of a material can be appropriately configured. Since the bonding surface 212A is located at a position slightly lower than the upper end of the first main portion 201A in the z direction, the dimension of the semiconductor device 101A in the z direction is extremely large by bonding the first wire 61. Can be prevented.

  When the element-side pad 22 has a configuration in which the plating base layer 221, the plating main layer 222, and the plating surface layer 223 are stacked, the plating main layer 222 can be exposed from the plating surface layer 223 in the vicinity of the boundary 213. By providing the first bonding portion 611 at a position close to the separation edge 214 and in a region where the plated surface layer 223 can be reliably formed, the first wire 61 and the element-side pad 22 can be bonded more reliably.

  Further, the first azimuth sensor element 2 is provided at a position where a part thereof overlaps with the depression 114 in the z direction. As a result, it is possible to reduce the size of the first orientation sensor element 2 that protrudes upward in the z direction from the main surface 111 of the substrate 1. Therefore, the semiconductor device 101A can be miniaturized.

  In particular, the magnetic wires 21 of the first direction sensor element 2 are parallel to the z direction. Such a first orientation sensor element 2 generally has a large z-direction size. By accommodating a part of the first orientation sensor element 2 in the blocking portion 141, reducing the z-direction dimension of the first orientation sensor element 2 protruding from the main surface 111 is advantageous for downsizing of the semiconductor device 101A. is there.

  In the second orientation sensor element 3, the magnetic wire 31 is parallel to the y direction, and in the third orientation sensor element 4, the magnetic wire 41 is parallel to the x direction. For this reason, the z direction dimensions of the second direction sensor element 3 and the third direction sensor element 4 become relatively small. Arranging the second orientation sensor element 3 and the third orientation sensor element 4 in such a position to overlap the main surface 111 is rational without causing the dimension of the semiconductor device 101A to increase.

  Furthermore, by mounting the second orientation sensor element 3 and the third orientation sensor element 4 on the integrated circuit element 5, the x-direction and y-direction dimensions of the semiconductor device 101A are not increased without increasing the z-direction dimension of the semiconductor device 101A. Can be reduced.

  By providing the blocking portion 141 in the wiring pattern 12, as described with reference to FIG. 14, the blocking portion 141 can be easily formed using the laser light L. Moreover, since the removal operation by the laser beam L is reliably blocked by the blocking portion 141, the blocking portion 141 having a desired depth can be formed. The blocking portion 141 being larger than the bottom surface 115 prevents, for example, the laser light L from unintentionally reaching the back surface 112 even if the irradiation accuracy of the laser light L has some dispersion. it can.

  As shown in FIG. 10, in the substrate 1, main surfaces 111 exist on both sides in the y direction across the depressed portion 114. The portion where the main surface 111 is present is a portion where the thickness in the z direction is larger than that of the depression portion 114. With such a configuration, the rigidity of the substrate 1 is appropriately secured despite the formation of the depression 114. Thus, it is possible to prevent the substrate 1 from being unduly bent in the manufacture of the semiconductor device 101A.

  By overlapping the blocking portion 141 and the two back surface electrodes 15, the plurality of back surface electrodes 15 can be arranged evenly and evenly on the back surface 112 without deviation.

  Since the second bonding portion of the first wire 61 is connected to the element-side pad 52 of 5 via the bump, the integrated circuit element 5 is unreasonably in the bonding step of the second bonding portion to which a relatively large force is applied. It can suppress that a big force acts.

  The second bonding portion of the third wire 63 is connected to the element-side pad 22 of the first orientation sensor element 2 or the element-side pad 32 of the second orientation sensor element 3 via a bump, thereby making the second wire 63 second In the bonding step of the bonding portion, it is possible to suppress that an excessively large force acts on the second direction sensor element 3 or the third direction sensor element 4. Further, by arranging the second bonding portion on the side of the second direction sensor element 3 or the third direction sensor element 4, it is possible to prevent the z-direction height of the semiconductor device 101A from becoming excessively large.

  21-45 illustrate variations and other embodiments of the present invention. In these figures, elements that are the same as or similar to the above embodiment are given the same reference numerals as the above embodiment.

  FIG. 21 shows a modification of the semiconductor device based on the first embodiment of the present invention. The semiconductor device 101B of this modification is different from the above-described semiconductor device 101A in the configuration of the element-side pad 22. In the present example, the plating surface layer 223 covers substantially the entire plating main layer 222. More specifically, the plating main layer 222 is covered by the plating surface layer 223 near the boundary 213 and is not exposed from the plating surface layer 223.

  Also according to such a modification, the first wire 61 and the element-side pad 22 can be bonded more firmly, and the first orientation sensor element 2 and the substrate 1 can be more reliably conducted.

  FIG. 22 shows another modified example of the semiconductor device based on the first embodiment of the present invention. In the semiconductor device 101C of this modification, the configurations of the first main portion 201A and the second main portion 202A are different from the above-described example. More specifically, the bonding position between the first main portion 201A and the second main portion 202A is different from that of the semiconductor device 101A and the semiconductor device 101B described above. The second main portion 202A has a surface continuous with the bonding surface 212A, and the first main portion 201A is bonded to this surface via the bonding material 203.

  Also according to such a modification, the first wire 61 and the element-side pad 22 can be bonded more firmly, and the first orientation sensor element 2 and the substrate 1 can be more reliably conducted.

  FIG. 23 shows another modification of the semiconductor device according to the first embodiment of the present invention. In the semiconductor device 102D of the present modified example, the configuration of the first direction sensor element 2 is different from the example described above. In the present modification, the first main portion 201A and the second main portion 202A are integrally formed. More specifically, the first main portion 201A and the second main portion 202A are formed of a semiconductor formed in a shape having the reference surface 211, the bonding surface 212A and the retracting side surface 215.

  Also according to such a modification, the first wire 61 and the element-side pad 22 can be bonded more firmly, and the first orientation sensor element 2 and the substrate 1 can be more reliably conducted.

  FIG. 24 shows another modification of the semiconductor device according to the first embodiment of the present invention. In the semiconductor device 101E of this modification, the magnitude of the angle α formed by the reference surface 211 and the bonding surface 212A is different from that in the above-described example. In the present variation, the angle α is greater than 90 °. However, the point where the angle α is set smaller than 180 ° is followed.

  Also according to such a modification, the first wire 61 and the element-side pad 22 can be bonded more firmly, and the first orientation sensor element 2 and the substrate 1 can be more reliably conducted. In the above-described semiconductor devices 101B to 191D, it is needless to say that the size of the angle α can be set variously.

  FIG. 25 shows another modification of the semiconductor device according to the first embodiment of the present invention. In the semiconductor device 101F of this modification, although the plating surface layer 223 is provided in the area covering the bonding surface 212A and the retraction side surface 215, it is not provided in the area covering the reference surface 211.

  Also according to such a modification, the first wire 61 and the element-side pad 22 can be bonded more firmly, and the first orientation sensor element 2 and the substrate 1 can be more reliably conducted. Also in the above-described semiconductor devices 101B to 191E, it goes without saying that the configuration of the plating surface layer 223 can be set in the same manner as in this modification.

  FIG. 26 shows another modification of the semiconductor device according to the first embodiment of the present invention. In the semiconductor device 101G of this modification, the element side pads 22 are provided in the area covering the bonding surface 212A and the retraction side surface 215, but are not provided in the area covering the reference surface 211.

  Also according to such a modification, the first wire 61 and the element-side pad 22 can be bonded more firmly, and the first orientation sensor element 2 and the substrate 1 can be more reliably conducted. Also in the above-described semiconductor devices 101B to 191F, it is needless to say that the configuration of the element-side pad 22 can be set in the same manner as in this modification.

  FIG. 27 shows another modification of the semiconductor device according to the first embodiment of the present invention. In the semiconductor device 101H of the present modified example, the recess 114 described above is not formed in the substrate 1. In the present modification, the first orientation sensor element 2 is mounted on the main surface 111 of the substrate 1.

  Also according to such a modification, the first wire 61 and the element-side pad 22 can be bonded more firmly, and the first orientation sensor element 2 and the substrate 1 can be more reliably conducted. Also in the semiconductor devices 101B to 191G described above, the configurations of the substrate 1 and the first direction sensor element 2 can be set as a matter of course as in the present modification.

  28 to 29 show a semiconductor device according to the second embodiment of the present invention. The semiconductor device 102A of the present embodiment differs from the semiconductor device according to the first embodiment described above in the configurations of the substrate 1 and the first orientation sensor element 2 and the mounting form of the first orientation sensor element 2 on the substrate 1. There is. However, the configuration other than the points mentioned below applies to the semiconductor device according to the first embodiment.

  FIG. 28 is a perspective view showing the semiconductor device 102A. FIG. 29 is a cross-sectional view taken along the line XXIX-XXIX in FIG. 28, and FIG. 30 is an enlarged cross-sectional view of relevant parts.

  In the present embodiment, the first orientation sensor element 2 has a semiconductor portion 201B and an auxiliary portion 202B. These names are for the convenience of understanding the invention in the present embodiment, and depending on the configuration of the material, they may be the same or similar members as the first main portion 201A and the second main portion 202A described above.

  In the present example, the recessed portion 114 described in the semiconductor device 101A is not formed in the substrate 1. In the present example, the first orientation sensor element 2 is mounted on the main surface 111 of the substrate 1.

  In the present embodiment, the semiconductor portion 201B is made of a semiconductor such as Si, for example, and the magnetic wire 21 is embedded therein. Auxiliary portion 202B is made of, for example, an insulator such as a resin. The semiconductor portion 201 B and the auxiliary portion 202 B are separate from each other, and are joined by the joining material 203.

  As shown in FIG. 30, the first orientation sensor element 2 has a reference surface 211, a pad surface 212B, and a retracting side surface 215. The reference surface 211 is parallel to the yz plane, and in the x direction in FIG. The reference surface 211 is configured by the semiconductor unit 201B. The pad surface 212B is parallel to the xy plane and is directed downward in the z direction in FIG. The pad surface 212B is configured by the auxiliary portion 202B. A boundary 213 is set between the reference surface 211 and the pad surface 212B. The boundary 213 substantially divides the reference surface 211 and the pad surface 212B, but is not limited to one constituted only by the reference surface 211 and the pad surface 212B. For example, in the illustrated example, the boundary 213 is constituted by the bonding material 203.

  A separation edge 214 is set opposite to the boundary 213 of the pad surface 212B. The separation edge 214 is an edge separated from the boundary 213. The retreating side surface 215 extends from the separation edge 214 on the opposite side to the side to which the bonding surface 212A faces, that is, upward in the z-direction view in FIG.

  As shown in FIG. 30, the device-side pad 22 has a portion formed on the pad surface 212B. Furthermore, in the present example, the element-side pad 22 is formed in a region extending from the boundary 213 to the separation edge 214 in the x-direction. The element-side pad 22 also has a portion formed on the reference surface 211. A portion of the element-side pad 22 formed on the reference surface 211 extends downward from the boundary 213 in the z direction. Thus, the boundary 213 is covered with the element-side pad 22. In this example, the element-side pad 22 does not reach the lower end of the semiconductor portion 201B in the z direction. The element-side pad 22 also has a portion formed on the retracting side surface 215. A portion of the element-side pad 22 formed on the retracting side surface 215 extends upward from the separation edge 214 in the z direction. Thus, the separation edge 214 is covered by the element-side pad 22.

  In this example, the element-side pad 22 has a configuration in which the above-described plating base layer 221, plating main layer 222, and plating surface layer 223 are stacked. However, the configuration of the element-side pad 22 is not limited to this, as long as conductive connection with the substrate 1 is possible.

  In the present example, the substrate-side pad 131 is provided immediately below the element-side pad 22 of the first orientation sensor element 2 in the z direction. That is, the pad surface 212 B faces the substrate-side pad 131 of the substrate 1.

  The semiconductor portion 201 B of the first orientation sensor element 2 is bonded to the main surface 111 of the substrate 1 by the bonding material 23. The element-side pad 22 is conductively joined to the substrate-side pad 131 of the substrate 1 by the conductive bonding material 66. The conductive bonding material 66 may be any one that can bond the first direction sensor element 2 to the substrate 1 electrically and mechanically, and examples thereof include solder, metal paste, and the like.

  The conductive bonding material 66 substantially completely fills the space between the portion of the element-side pad 22 formed on the pad surface 212 B and the substrate-side pad 131. When the conductive bonding material 66 is made of, for example, solder, the conductive bonding material 66 melts and becomes liquid in the bonding process. At this time, the melted conductive bonding material 66 adheres to a portion of the element-side pad 22 formed on the retraction side surface 215. As a result, as shown in FIGS. 28 to 30, the conductive bonding material 66 is finished in a shape having a so-called fillet portion which stands up along the portion of the element side pad 22 formed on the retraction side surface 215. In addition, the conductive bonding material 66 can also adhere to a portion of the element-side pad 22 formed on the reference surface 211.

  As shown in FIGS. 29 and 30, the main surface layer 13 has an additional substrate-side pad 132. The additional substrate pad 132 is electrically connected to the substrate pad 131. When a plurality of substrate pads 131 are formed on the main surface layer 13, the same number of additional substrate pads 132 can be provided. One end of the first wire 61 is bonded to the additional substrate pad 132. The other end of the first wire 61 is bonded to the element-side pad 52 of the integrated circuit element 5.

  Next, the operation of the semiconductor device 102A will be described.

  According to such an embodiment, it is not necessary to bond a wire to conductively bond the first orientation sensor element 2 and the substrate 1. Since the first orientation sensor element 2 aims to set the magnetic wire 21 in the z-direction, the semiconductor portion 201B is generally set in the z-direction. When the element-side pad 22 is provided to conductively bond such a semiconductor portion 201B, the element-side pad 22 is formed on the basis of the auxiliary portion 202B and the like. When the element-side pad 22 is made of resin or the like, vibrations and pressure when bonding a wire are dispersed, and strong bonding is hindered. In addition, the first orientation sensor element 2 in the posture in which it is erected in the z direction tends to be unstable when a large force is applied by bonding. In this point, in the semiconductor device 102A conductively joined by the conductive bonding material 66, it is possible to eliminate the unstable element of wire bonding, and the substrate 1 and the first orientation sensor element 2 can be more reliably and strongly It can be conducted.

  By forming the element-side pad 22 to have a portion formed on the retraction side surface 215, the conductive bonding material 66 can be provided with a fillet portion. This fillet portion is advantageous for making the conductive connection of the first orientation sensor element 2 to the substrate 1 more robust. Further, the quality of the mounting of the first direction sensor element 2 can be easily determined by visually checking the presence or absence of the fillet portion.

  The bonding strength of the first orientation sensor element 2 can be further enhanced by having the element-side pad 22 formed on the reference surface 211.

  By configuring the auxiliary portion 202B as a member made of an insulating material that is separate from the semiconductor portion 201B, it is possible to avoid unintended conduction in the first orientation sensor element 2. In addition, a relatively complicated shape having the reference surface 211, the pad surface 212B and the retraction side surface 215 can be appropriately formed by combining the semiconductor portion 201B and the auxiliary portion 202B.

  FIG. 31 shows a modification of the semiconductor device based on the second embodiment of the present invention. In the semiconductor device 102B of the present modification, the element-side pad 52 of the integrated circuit element 5 is provided to face downward in the z-direction view. The element-side pad 52 and the additional substrate-side pad 132 of the substrate 1 are bonded via the conductive bonding material 67. The conductive bonding material 67 is, for example, a solder.

  Also in such a modification, the substrate 1 and the first orientation sensor element 2 can be more reliably and strongly conducted, and the first orientation sensor element 2 and the integrated circuit element 5 are appropriately conducted. be able to.

  FIG. 32 shows another modification of the semiconductor device according to the second embodiment of the present invention. In the semiconductor device 102C of the present modified example, the position of the auxiliary portion 202B in the x direction is different from that of the first main portion 201A and the semiconductor device 102B described above. In the present modification, the auxiliary part 202B is disposed on the opposite side of the semiconductor part 201B to the integrated circuit element 5.

  With the arrangement of the auxiliary portion 202B, the substrate-side pad 131 of the substrate 1 is provided at a position separated from the integrated circuit element 5 beyond the semiconductor portion 201B. The substrate side pad 131 and the additional substrate side pad 132 are electrically connected by a part of the intermediate layer 14.

  Also in such a modification, the substrate 1 and the first orientation sensor element 2 can be more reliably and strongly conducted, and the first orientation sensor element 2 and the integrated circuit element 5 are appropriately conducted. be able to.

  FIG. 33 shows another modification of the semiconductor device according to the second embodiment of the present invention. The semiconductor device 102D of the present modified example is different from the example described above in the configuration of the substrate 1 and the bonding mode of the first orientation sensor element 2. In the present modification, a depression 114 is formed in the substrate 1. The configuration of the substrate 1 having the depressed portion 114 is the same as the configuration described for the semiconductor device 101A.

  The substrate side pad 131 is provided on the main surface 111. On the other hand, a part of the semiconductor portion 201 B of the first direction sensor element 2 is accommodated in the depression portion 114. The semiconductor portion 201 B is bonded to the bottom surface 115 of the depressed portion 114 via the bonding material 23. In order to bond the element-side pad 22 to the substrate-side pad 131 located above the bottom surface 115 in the z-direction in the drawing, in this modification, the distance between the lower end in the z-direction of the semiconductor portion 201B and the pad surface 212B is It is relatively large.

  Also in such a modification, the substrate 1 and the first orientation sensor element 2 can be more reliably and strongly conducted, and the first orientation sensor element 2 and the integrated circuit element 5 are appropriately conducted. be able to. Further, the z-direction dimension of the semiconductor device 102D can be reduced.

  34 to 37 show a magnetic element according to the third embodiment of the present invention. The illustrated first direction sensor element 2 can be appropriately adopted to the above-described semiconductor devices 101A to 101H and semiconductor devices 102A to 102D. Of course, the configuration of the first azimuth sensor element 2 described below is applicable to the second azimuth sensor element 3 and the third azimuth sensor element 4 described above. The first orientation sensor element 2 includes a support substrate 201 C, a magnetic wire 21, a coil 24, and an insulating portion 25. Note that the support substrate 201C can be the first main portion 201A and the semiconductor portion 201B described above depending on the configuration of the material and the like. The first orientation sensor element 2 may be configured such that the second main portion 202A or the auxiliary portion 202B described above is joined to the support substrate 201C.

  FIG. 34 is a perspective view of an essential part showing the first direction sensor element 2. FIG. 35 is a plan view of relevant parts showing the first direction sensor element 2. 36 is a cross-sectional view of main parts along the line XXXVI-XXXVI in FIG. 35, and FIG. 37 is a cross-sectional view of main parts along the line XXXVII-XXXVII in FIG.

  Further, the first direction sensor element 2 corresponds to an example of the magnetic element in the present invention. The magnetic element refers to an element having a magnetic wire and a coil insulated and wound on the magnetic wire. Therefore, the present invention can be applied to the configuration of various applications such as the first azimuth sensor element 2 used for azimuth detection and a magnetic element used as an electromagnet.

  The support substrate 201C is a base of the first direction sensor element 2, and made of a nonmagnetic material. In the present embodiment, the support substrate 201C is made of, for example, Si or ceramic. The support substrate 201C has a reference surface 211.

  Further, the wiring pattern 240 is formed on the support substrate 201C. Wiring pattern 240 is made of, for example, Cu, Ni or the like, and is formed by plating, for example. The wiring pattern 240 is electrically connected to the element-side pad 22 in the above-described embodiment in a region not shown.

  The magnetic wire 21 is supported by the support substrate 201 C, and constitutes a detection reference axis of the first direction sensor element 2. The magnetic wire 21 is made of a magnetic material, and in the present embodiment, an amorphous wire is used. A specific material of such a magnetic wire 21 is, for example, a CoFeSiB alloy. As an example of the dimensions of the magnetic wire 21, the length of the magnetic wire 21 is about 100 μm and the diameter is about 15 μm. The magnetic wires 21 are disposed along the z direction, and both ends thereof are conductively joined to appropriate positions of the wiring pattern 240.

  The insulating portion 25 covers the magnetic wire 21 and is made of an insulating material such as SiO 2. As shown in FIGS. 36 and 37, the insulating portion 25 is composed of a supporting substrate side insulating portion 251 and a non-supporting base side insulating portion 252.

  The support substrate side insulating portion 251 is a portion positioned on the support substrate 201C side with respect to the magnetic material wire 21, and is interposed between the magnetic material wire 21 and the support substrate 201C. Furthermore, the non-supporting base-side insulating portion 252 is located between the wiring pattern 240 and the magnetic wire 21 in the cross section shown in FIG. The anti-supporting base-side insulating portion 252 has a uniform thickness.

  The non-supporting base-side insulating portion 252 is a portion located on the magnetic wire 21 opposite to the supporting substrate 201C. In the present embodiment, the non-supporting base-side insulating portion 252 has a cross-sectional shape in a plane perpendicular to the z-direction bulging toward the side away from the support substrate 201C.

  The coil 24 is insulated with respect to the magnetic wire 21 and wound around the magnetic wire 21. The coil 24 consists of a support substrate side 241 and an anti-support substrate side 242. The support substrate side portion 241 is formed on the support substrate 201C and located on the support substrate 201C side in the x direction which is the thickness direction of the support substrate 201C. The anti-supporting substrate side 242 is constituted by a plurality of conductor wires 246. Each of the plurality of conductor wires 246 is bonded to the support substrate side portion 241 at both ends and is located on the opposite side of the support substrate side portion 241 with the magnetic wire 21 interposed in the x direction.

  The support substrate side portion 241 is a part of the wiring pattern 240. As shown in FIGS. 34 and 35, the support substrate side 241 is composed of a plurality of coil elements 243. The plurality of coil elements 243 each have a pair of pad portions 244 and a connecting portion 245 connecting these pad portions 244, and are arranged in the x direction. In this example, each coil element 243 extends in a direction slightly inclined with respect to the y direction.

  The conductor wire 246 is bonded to one pad portion 244 of one coil element 243 and to one pad portion 244 of another coil element 243 different from the coil element 243. The two pad portions 244 to which one conductor wire 246 is bonded are located on the opposite sides of the magnetic wire 21 in the y direction. That is, the conductor wire 246 is formed so as to straddle the magnetic wire 21 in the y direction. The conductor wire 246 is made of, for example, any of Au, Cu, Al and Ag.

  Further, in the present example, as shown in FIG. 35, all the conductor wires 246 are joined to one pad portion 244 of the coil element 243 adjacent to each other. Thereby, a conduction path in which the coil element 243 and the conductor wire 246 are alternately connected is formed, and the coil 24 is formed.

  The conductor wire 246 in the present example has a first bonding portion 247, a second bonding portion 248 and a bump portion 249. The first bonding portion 247 is joined to the pad portion 244 of a certain coil element 243. The second bonding portion 248 is bonded to the pad portion 244 of the other coil element 243 via the bump portion 249.

  Next, the manufacturing process of the coil 24 will be described below with reference to FIGS. 38 to 42.

  First, as shown in FIG. 38, the wiring pattern 240 including the support substrate side portion 241 is formed on the support substrate 201C. Further, the supporting substrate side insulating portion 251 is formed, and the magnetic wire 21 is joined to the appropriate position of the wiring pattern 240. Then, the non-supporting base-side insulating portion 252 is formed so as to cover the magnetic wire 21, and the insulating portion 25 is completed. Next, a capillary 81 capable of feeding out the wire 82 is prepared. A predetermined amount of capillary 81 is exposed from the lower end of the capillary 81 and melted to form a molten ball.

  Next, as shown in FIG. 39, the capillary 81 is lowered to attach the molten ball of the wire 82 to one of the pad portions 244 of the coil element 243. Then, by pulling up the capillary 81 without feeding the wire 82, a bump portion 249 shown in FIG. 40 is formed. Then, the molten ball described above is formed and attached to one pad portion 244 of the other coil element 243.

  Next, as shown in FIG. 41, the capillary 81 is raised while the wire 82 is drawn out. Then, as shown in FIG. 42, the capillary 81 is moved, and the wire 82 located in the vicinity of the tip of the capillary 81 is pressed against the bump portion 249. Thereby, the second bonding portion 248 is formed. Thereafter, the wire 82 is cut by raising the capillary 81 without feeding the wire 82. As a result, one conductor wire 246 is formed. By repeating this process a predetermined number of times, first orientation sensor element 2 provided with coil 24 having a plurality of conductor wires 246 shown in FIGS. 34 and 35 is obtained.

  Next, the operation of the first direction sensor element 2 of the present embodiment will be described below.

  According to the present embodiment, a part of the coil 24 is configured by the plurality of conductor wires 246. The conductor wire 246 is formed by a so-called wire bonding method, so that its shape can be set relatively freely. As a result, the distance between the conductor wire 246 and the magnetic wire 21, the degree of bending of the conductor wire 246, and the like can be variously adjusted. By such adjustment, when the attitude of the magnetic wire 21 with respect to the earth magnetism is slightly changed, a weak current change due to the change can be appropriately and surely generated. Therefore, the detection accuracy of the first direction sensor element 2 can be enhanced.

  By providing the insulating portion 25, the magnetic wire 21 and the coil 24 can be reliably insulated. The support substrate side insulating portion 251 contributes to the insulation between the magnetic wire 21 and the support substrate side portion 241. The anti-supporting base-side insulating portion 252 contributes to the insulation between the magnetic wire 21 and the anti-supporting substrate side 242.

  By providing the bump portion 249, the bonding strength of the first bonding portion 247 and the second bonding portion 248 can be made more equal, and it is possible to avoid that one of the bonding reliability is inferior to the other.

  FIG. 43 shows a modification of the magnetic element based on the third embodiment of the present invention. In the first orientation sensor element 2 of the present modification, the conductor wire 246 is configured not to have the bump portion 249 described above. The detection accuracy of the first direction sensor element 2 can be enhanced also by such a modification.

  FIG. 44 shows another modification of the magnetic element according to the third embodiment of the present invention. In the first orientation sensor element 2 of the present modification, a groove 216 is formed in the support substrate 201C. The groove portion 216 is recessed from the reference surface 211 and extends in the z direction. At least a part of the support substrate side portion 241 of the coil 24 is formed in the groove portion 216. More specifically, among the plurality of coil elements 243 constituting the support substrate side portion 241, the respective connecting portions 245 are formed in the groove portion 216. On the other hand, the pad portion 244 is formed on the reference surface 211.

  Further, in the present modification, the support substrate side insulating portion 251 of the insulating portion 25 is formed in the groove portion 216. Since the upper surface of the support substrate side insulating portion 251 in the drawing is located lower than the reference surface 211 in the drawing, a part of the magnetic wire 21 is accommodated in the groove portion 216. The non-supporting base-side insulating portion 252 bulges so as to protrude further upward in the drawing while filling the groove portion 216.

  The detection accuracy of the first direction sensor element 2 can be enhanced also by such a modification. In addition, it is possible to keep the support substrate side portion 241 farther from the magnetic wire 21 than the example described above. Thereby, the distance from the magnetic wire 21 to the support substrate side portion 241 and the distance from the magnetic wire 21 to the non-support substrate side portion 242 can be made more equal. This is advantageous for achieving more accurate detection.

  FIG. 45 shows another modification of the magnetic element according to the third embodiment of the present invention. In the first orientation sensor element 2 of this modification, the conductor wire 246 is not bonded to the pad portion 244 of the coil element 243 adjacent to each other. The conductor wire 246 has one pad portion 244 of one coil element 243 and one pad of yet another coil element 243 spaced apart in the z direction with another coil element 243 adjacent to the coil element 243. It is bonded to the portion 244. That is, among the plurality of coil elements 243, the elements that actually constitute the coil 24 are the coil elements 243 arranged alternately in the z direction.

  The detection accuracy of the first direction sensor element 2 can be enhanced also by such a modification. Further, as understood from the present modification, if the wiring pattern 240 including the required maximum number of coil elements 243 is formed, which coil element 243 is adopted as a part of the coil 24 is Can be selected appropriately in the bonding step of forming the plurality of conductor wires 246. Thus, it is possible to easily manufacture the first direction sensor element 2 including the coils 24 of a plurality of types of specifications using the support substrate 201C on which the wiring pattern 240 of a single specification is formed.

  The semiconductor device and the magnetic element according to the present invention are not limited to the embodiments described above. The specific configuration of each part of the semiconductor device and the magnetic element according to the present invention can be varied in design in many ways.

101A to 101H Semiconductor devices 102A to 102D Semiconductor device 1 Substrate 111 Main surface 112 Back surface 113 Substrate side outer surface 114 Recessed portion 115 Bottom surface 116 Inner surface 117 Curved surface 11 Base 12 Wiring pattern 13 Main surface layer 131 Substrate side pad 132 Additional substrate Side pad 14 Intermediate layer 141 Blocking portion 15 Back surface electrode 151 Blocking portion 10 Substrate material 2 First orientation sensor element 201A First main portion 201B Semiconductor portion 201C Support substrate 202A Second main portion 202B Auxiliary portion 203 Bonding material 211 Reference surface 212A Bonding Surface 212B Pad surface 213 Boundary 214 Separation edge 215 Retraction side 216 Groove 21 Magnetic wire 22 Element side pad 221 Plating base layer 222 Plating main layer 223 Plating surface layer 23 Bonding material 24 Coil 240 Wiring pattern 241 Support substrate side 242 Anti-support Plate side portion 243 Coil element 244 Pad portion 245 Connecting portion 246 Conductor wire 247 First bonding portion 248 Second bonding portion 249 Bump portion 25 Insulating portion 251 Supporting substrate side insulating portion 252 Non-supporting base side insulating portion 261 Mask layer 3 Second direction sensor Element 31 Magnetic material wire 32 Element side pad 33 Bonding material 4 Third direction sensor element 41 Magnetic material wire 42 Element side pad 43 Bonding material 5 Integrated circuit element 52 Element side pad 53 Bonding material 61 First wire 611 First bonding part 62 Two wires 63 third wire 64 fourth wire 65 fifth wire 66 conductive bonding material 67 conductive bonding material 7 sealing resin 71 sealing resin side outer surface 81 capillary 82 wire

Claims (14)

A supporting substrate,
A magnetic wire supported by the support substrate and extending in a first direction;
A coil insulated with respect to the magnetic wire and wound around the magnetic wire;
A magnetic element comprising
The coil is formed on the support substrate and the support substrate side portion located on the support substrate side in the second direction that is the thickness direction of the support substrate, and both ends thereof are joined to the support substrate side, And a non-supporting substrate side constituted by a plurality of conductor wires located on the opposite side to the supporting substrate side across the magnetic material wire in the second direction;
An insulating portion which covers the magnetic wire and which is interposed between the magnetic wire and the coil;
The insulating portion is interposed between a supporting substrate side insulating portion interposed between the magnetic wire and the supporting substrate side portion of the coil, and between the magnetic wire and the non-supporting substrate side portion of the coil. Anti-supporting substrate side insulation,
The supporting substrate side insulating portion is formed separately from the non-supporting substrate side insulating portion, and has a uniform thickness.
The support substrate has a reference surface and a groove recessed from the reference surface,
At least a part of the support substrate side portion of the coil is formed in the groove portion,
The supporting substrate side insulating portion is formed in the groove portion,
At least a part of the magnetic wire is accommodated in the groove portion.   The magnetic element according to claim 1, wherein the support substrate side portion is a part of a wiring pattern formed on the support substrate.   The said support substrate side has a connection part which each connects a pair of pad part and these pad parts, and consists of several coil elements arranged in the said 1st direction. Magnetic elements.   The magnetic element according to claim 3, wherein each of the conductor wires is bonded to one of the pad portions of one of the coil elements and one of the pad portions of another coil element different from the coil element. .   5. The at least one of the plurality of conductor wires is bonded to one of the pad portions of one of the coil elements and to one of the pad portions of another coil element adjacent to the coil element. The magnetic element as described in. At least any one of the plurality of conductor wires is one of the pad portion of one of the coil elements and another coil element spaced apart in the first direction with another coil element adjacent to the coil element. The magnetic element according to claim 4 or 5, which is bonded to one of the pad portions of the coil element.   7. The non-supporting substrate side insulating portion according to claim 3, wherein a cross-sectional shape in a plane perpendicular to the first direction bulges to the side separating from the supporting substrate. Magnetic element.   The magnetic element according to any one of claims 3 to 7, wherein the pair of pad portions of the plurality of coil elements are formed on the reference surface.   The magnetic element according to claim 8, wherein a part of the connection part of the plurality of coil elements is formed in the groove part.   The magnetic element according to any one of claims 1 to 9, wherein the support substrate is made of a nonmagnetic material.   The magnetic element according to claim 10, wherein the support substrate is made of Si or a ceramic.   The magnetic element according to any one of claims 1 to 11, wherein the magnetic wire is amorphous.   The magnetic element according to any one of claims 1 to 12, wherein the conductor wire is made of any of Au, Cu, Al and Ag.   The magnetic element according to any one of claims 1 to 13, wherein the magnetic wire is configured as an orientation sensor element that forms a detection reference axis.

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