JP6548651B2 - 低ノイズセンサおよび低ノイズセンサを用いた検査システム - Google Patents
低ノイズセンサおよび低ノイズセンサを用いた検査システム Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/617—Noise processing, e.g. detecting, correcting, reducing or removing noise for reducing electromagnetic interference, e.g. clocking noise
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/745—Circuitry for generating timing or clock signals
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N2021/95676—Masks, reticles, shadow masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- Condensed Matter Physics & Semiconductors (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
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- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
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Description
本願は、2013年12月19日に出願された、“System And Method For Clocking A Low−Noise Sensor And An Inspection System And Method Using A Low−Noise Sensor”と題する米国仮特許出願第61/918,108号の優先権を主張する。同出願を参照によって本願に援用する。
Claims (19)
- 高速でサンプルを検査する方法において、
放射をサンプルへと方向付け、そこで合焦させるステップと、
サンプルからの放射を受け取り、受け取った放射をイメージセンサへと方向付けるステップと、
イメージセンサを所定の信号で駆動するステップと、
を含み、所定の信号は、イメージセンサからの出力信号のセトリング時間を最小化し、所定の信号は、ルックアップ値の選択に使用される位相アキュムレータによって制御され、前記ルックアップ値は、前記位相アキュムレータの最上位ビットにより選択され、前記位相アキュムレータの余分の最下位ビットにより各クロックサイクル内の分数位相変化が与えられることを特徴とする方法。 - 請求項1に記載の方法において、
前記駆動するステップは、初期位相値を位相アキュムレータにロードするステップを含むことを特徴とする方法。 - 請求項2に記載の方法において、
前記駆動するステップは、ルックアップ値をアナログ信号に変換するステップを含むことを特徴とする方法。 - 請求項3に記載の方法において、
前記駆動するステップは、位相クロックの各サイクルについて、位相インクリメントを位相アキュムレータに加算するステップを含むことを特徴とする方法。 - 請求項4に記載の方法において、
前記駆動するステップは、位相アキュムレータの最大値を超えたか否かを判断するステップを含むことを特徴とする方法。 - 請求項5に記載の方法において、
前記駆動するステップは、
位相アキュムレータの最大値を超えない場合に、位相アキュムレータの最上位ビットを選択するステップと、前記位相インクリメントを位相アキュムレータに加算する前記ステップと、を含むことを特徴とする方法。 - 請求項6に記載の方法において、
前記駆動するステップは、
位相アキュムレータの最大値を超えた場合に、サイクルカウントをインクリメントするステップを含むことを特徴とする方法。 - 請求項7に記載の方法において、
前記駆動するステップは、最大のカウントサイクル値を超えたか否かを判断するステップを含むことを特徴とする方法。 - 請求項8に記載の方法において、
前記駆動するステップは、
前記最大カウントサイクル値を超えていなければ、位相アキュムレータの最上位ビットを選択する前記ステップと、位相インクリメントを位相アキュムレータに加算する前記ステップを繰り返すステップを含むことを特徴とする方法。 - 請求項9に記載の方法において、
前記駆動するステップは、
最大カウントサイクル値を超えた場合に、前記駆動するステップを停止するステップを含むことを特徴とする方法。 - 請求項2に記載の方法において、
最上位ビットは16ビットであることを特徴とする方法。 - 請求項1に記載の方法において、
前記受け取った放射は散乱放射であることを特徴とする方法。 - 請求項1に記載の方法において、
受け取った放射は反射放射であることを特徴とする方法。 - サンプルを検査するシステムにおいて、
光源と、
光検出を行うように構成された装置と、
光を光源からサンプルへと方向付け、サンプルからの光出力、反射、または透過を装置へと方向付けるように構成された光学系と、
装置を駆動する駆動回路と、
を含み、駆動回路は、装置の出力信号のセトリング時間を最小化するカスタム波形ジェネレータを含み、カスタム波形ジェネレータは、クロックおよび制御信号を受け取るための位相アキュムレータと、位相アキュムレータの出力に接続されたルックアップテーブルと、ルックアップテーブルの出力に接続されたデジタル−アナログ変換器と、を含み、前記ルックアップテーブルのルックアップ値は、前記位相アキュムレータの最上位ビットにより選択され、前記位相アキュムレータの余分の最下位ビットにより各クロックサイクル内の分数位相変化が与えられることを特徴とするシステム。 - 請求項14に記載のシステムにおいて、
光学系は、
光出力、反射、または透過が第一のチャネルに対応するときの第一のチャネルの画像モードリレイと、
光出力、反射、または透過が第二のチャネルに対応するときの第二のチャネルの画像モードリレイと、
を含み、
装置は、第一のチャネルの画像モードリレイと第二のチャネルの画像モードリレイのリレイ出力を受け取るように構成されたイメージセンサであることを特徴とするシステム。 - 請求項14に記載のシステムにおいて、
装置は半導体薄膜を含み、半導体薄膜は、半導体薄膜の第一の表面の上に形成された回路素子と、半導体薄膜の第二の表面の上に堆積された純ボロン層を含むことを特徴とするシステム。 - 請求項14に記載のシステムにおいて、
装置は、画像領域の両側にそれぞれ配置された読出し回路を2セット含むことを特徴とするシステム。 - 請求項14に記載のシステムにおいて、
装置は電子衝突イメージセンサを含むことを特徴とするシステム。 - 請求項14に記載のシステムにおいて、
装置は1つまたは複数のイメージセンサを含むことを特徴とするシステム。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361918108P | 2013-12-19 | 2013-12-19 | |
US61/918,108 | 2013-12-19 | ||
US14/273,424 | 2014-05-08 | ||
US14/273,424 US9347890B2 (en) | 2013-12-19 | 2014-05-08 | Low-noise sensor and an inspection system using a low-noise sensor |
PCT/US2014/071312 WO2015095613A1 (en) | 2013-12-19 | 2014-12-18 | A low-noise sensor and an inspection system using a low-noise sensor |
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JP2017509176A JP2017509176A (ja) | 2017-03-30 |
JP6548651B2 true JP6548651B2 (ja) | 2019-07-24 |
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JP2016541423A Active JP6548651B2 (ja) | 2013-12-19 | 2014-12-18 | 低ノイズセンサおよび低ノイズセンサを用いた検査システム |
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US (1) | US9347890B2 (ja) |
EP (1) | EP3085077A4 (ja) |
JP (1) | JP6548651B2 (ja) |
KR (1) | KR102179984B1 (ja) |
CN (1) | CN105829873B (ja) |
IL (1) | IL245964B (ja) |
TW (1) | TWI637163B (ja) |
WO (1) | WO2015095613A1 (ja) |
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- 2014-12-18 KR KR1020167019258A patent/KR102179984B1/ko active IP Right Grant
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