JP6543053B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP6543053B2
JP6543053B2 JP2015050523A JP2015050523A JP6543053B2 JP 6543053 B2 JP6543053 B2 JP 6543053B2 JP 2015050523 A JP2015050523 A JP 2015050523A JP 2015050523 A JP2015050523 A JP 2015050523A JP 6543053 B2 JP6543053 B2 JP 6543053B2
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Japan
Prior art keywords
semiconductor
conductor
insulator
transistor
oxide
Prior art date
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Expired - Fee Related
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JP2015050523A
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English (en)
Japanese (ja)
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JP2015188084A5 (https=
JP2015188084A (ja
Inventor
山崎　舜平
舜平 山崎
坂倉　真之
真之 坂倉
浜田　崇
崇 浜田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2015050523A priority Critical patent/JP6543053B2/ja
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Publication of JP2015188084A5 publication Critical patent/JP2015188084A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/203—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using transformation of metal, e.g. oxidation or nitridation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3426—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials

Landscapes

  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
JP2015050523A 2014-03-14 2015-03-13 半導体装置の作製方法 Expired - Fee Related JP6543053B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2015050523A JP6543053B2 (ja) 2014-03-14 2015-03-13 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014051720 2014-03-14
JP2014051720 2014-03-14
JP2015050523A JP6543053B2 (ja) 2014-03-14 2015-03-13 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2019111150A Division JP6761514B2 (ja) 2014-03-14 2019-06-14 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2015188084A JP2015188084A (ja) 2015-10-29
JP2015188084A5 JP2015188084A5 (https=) 2018-04-19
JP6543053B2 true JP6543053B2 (ja) 2019-07-10

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Family Applications (2)

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JP2015050523A Expired - Fee Related JP6543053B2 (ja) 2014-03-14 2015-03-13 半導体装置の作製方法
JP2019111150A Active JP6761514B2 (ja) 2014-03-14 2019-06-14 半導体装置の作製方法

Family Applications After (1)

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JP2019111150A Active JP6761514B2 (ja) 2014-03-14 2019-06-14 半導体装置の作製方法

Country Status (2)

Country Link
US (1) US20150263140A1 (https=)
JP (2) JP6543053B2 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017149413A1 (en) * 2016-03-04 2017-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102448587B1 (ko) * 2016-03-22 2022-09-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 상기 반도체 장치를 포함하는 표시 장치
US10043659B2 (en) 2016-05-20 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device or display device including the same
WO2017199128A1 (en) 2016-05-20 2017-11-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device or display device including the same
JP2019102530A (ja) * 2017-11-29 2019-06-24 東芝メモリ株式会社 半導体装置およびその製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0384963A (ja) * 1989-08-29 1991-04-10 Casio Comput Co Ltd 薄膜トランジスタ
JP2004128217A (ja) * 2002-10-02 2004-04-22 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ及びその作製方法
JP5562603B2 (ja) * 2008-09-30 2014-07-30 株式会社半導体エネルギー研究所 表示装置
KR101690216B1 (ko) * 2009-05-01 2016-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
KR101782176B1 (ko) * 2009-07-18 2017-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
TWI559501B (zh) * 2009-08-07 2016-11-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
KR101835300B1 (ko) * 2009-12-08 2018-03-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2011089841A1 (en) * 2010-01-22 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8685787B2 (en) * 2010-08-25 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
TWI556317B (zh) * 2010-10-07 2016-11-01 半導體能源研究所股份有限公司 薄膜元件、半導體裝置以及它們的製造方法
KR101680768B1 (ko) * 2010-12-10 2016-11-29 삼성전자주식회사 트랜지스터 및 이를 포함하는 전자장치
TWI521612B (zh) * 2011-03-11 2016-02-11 半導體能源研究所股份有限公司 半導體裝置的製造方法
US8847220B2 (en) * 2011-07-15 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102932705B1 (ko) * 2012-04-13 2026-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI478344B (zh) * 2012-07-04 2015-03-21 E Ink Holdings Inc 電晶體與其製造方法
SG11201505225TA (en) * 2012-08-03 2015-08-28 Semiconductor Energy Lab Oxide semiconductor stacked film and semiconductor device

Also Published As

Publication number Publication date
JP2015188084A (ja) 2015-10-29
US20150263140A1 (en) 2015-09-17
JP2019161237A (ja) 2019-09-19
JP6761514B2 (ja) 2020-09-23

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