JP6531622B2 - Cylindrical mask, exposure system - Google Patents

Description

  The present invention relates to a cylindrical mask having a transfer pattern formed on the outer peripheral surface thereof, an exposure apparatus for transferring a cylindrical mask pattern onto an object to be processed, and a device manufacturing method.

  As an exposure apparatus used in a photolithography process, there is an apparatus which scans and exposes a cylindrical mask pattern on a flexible substrate through a projection optical system. In Patent Document 1, as particularly shown in FIG. 5, a flexible mask is wound around an outer peripheral surface of about half of the rotational axis direction of one rotary drum, and a flexible substrate to be exposed (photosensitive substrate) Of the pattern on the mask is projected and exposed onto the substrate through a projection optical system having a hexagonal projection field while rotating the rotary drum while winding it around the other half of the rotational axis direction of the rotary drum. An exposure apparatus is described. This exposure apparatus shifts the rotating drum in the direction of the rotation axis while scanning and exposing a pattern for one rotation of the mask on the substrate by the rotation of the rotating drum, thereby making the mask pattern larger than the size of the projection field. An area is exposed on the substrate.

  As described above, in an exposure apparatus that exposes a pattern to a substrate using a cylindrical mask, the mask pattern formed over one circumference of the outer peripheral surface of the cylindrical mask may be continuously transferred to the substrate. it can. The pattern of the mask needs to be exchanged because it differs depending on the type of device or layer to be formed on the substrate. Also, like liquid crystal display devices and organic EL display devices, even if the display screen size (screen diagonal length and aspect ratio) is different, the size and structure of each pixel (pixel) itself constituting the display screen is Often the same. However, display devices with different screen sizes are treated as devices of different types, and mask patterns are prepared for each screen size, and masks are exchanged. In the case of a cylindrical mask, when the display screen size is different, the circumferential length of the cylindrical mask is changed, and cylindrical masks of various diameters are prepared. Therefore, there arises a problem that an exposure apparatus corresponding to the mounting of cylindrical masks of various diameters is required.

U.S. Patent No. 6018383

  According to a first aspect of the present invention, there is provided a cylindrical mask for transferring a device pattern for a display device comprising a large number of pixel portions onto a sensitive transfer substrate, which is constant from a predetermined center line A plurality of first patterns related to at least the pixel portion of the device pattern are periodically formed along each of the circumferential direction of the outer circumferential surface and the direction of the center line. A repeating pattern region, and a portion of the outer circumferential surface that is adjacent to the repeating pattern region in the circumferential direction of the outer circumferential surface, and is a part of the circumferential direction of the outer circumferential surface and differs from the first pattern along the direction of the center line And a buffer area in which two patterns are formed, and a size when two or more n of the repetitive pattern areas sandwich n-1 of the buffer areas and are seamed in the circumferential direction of the outer peripheral surface The entire cylindrical mask to correspond to the size of the device pattern to be transferred to the transferred substrate.

  According to a second aspect of the present invention, there is provided a mask rotating mechanism for supporting the cylindrical mask described above and rotating it around the center line, supporting the substrate to be transferred, and A substrate moving mechanism for moving the substrate to be transferred in a predetermined direction in synchronization with rotation, and an illumination optical system for irradiating a part of the outer peripheral surface of the cylindrical mask with illumination light extending in a direction parallel to the center line And a projection optical system for projecting and exposing an image of the repetitive pattern area and the buffer area onto the transfer substrate by receiving the light generated from the outer peripheral surface of the cylindrical mask by the irradiation of the illumination light. During the rotation of the cylindrical mask, the illumination light or the projection optical system is stopped so that the projection exposure thereafter is stopped according to the timing at which the buffer area is projected onto the transfer substrate by the projection optical system. Light path The mask rotating mechanism, the substrate moving mechanism, and the like, such that an exposure blocking mechanism to cut off, n pieces of the repetitive pattern area and n-1 pieces of the buffer area are jointed and transferred on the substrate to be transferred; And a controller configured to control the exposure blocking mechanism.

According to the third aspect of the present invention, the substrate is rotated by moving a cylindrical mask having a device pattern for a display device including a plurality of pixel portions while moving the long substrate in the longitudinal direction. A device manufacturing method for transferring the device pattern onto the device, the device pattern being formed along a cylindrical outer peripheral surface having a constant radius from a predetermined center line, wherein at least a first pattern related to at least the pixel portion of the device pattern is A repeated pattern region periodically formed in a plurality with respect to each of the circumferential direction of the outer circumferential surface and the direction of the center line, and the circumferential direction of the outer circumferential surface is disposed adjacent to the repeated pattern region A buffer region which is a part of the direction and in which a second pattern different from the first pattern is formed along the direction of the center line, and two or more of the repetitive pattern regions The size of n pieces sandwiching n-1 pieces of the buffer area and joined in the circumferential direction of the outer peripheral surface corresponds to the size in the longitudinal direction of the device pattern transferred to the substrate. Preparing a cylindrical mask,
The movement of the substrate in the longitudinal direction and the rotation of the cylindrical mask are synchronized, and the repetitive pattern area of the cylindrical mask and the buffer area are sequentially joined in the longitudinal direction on the substrate. And a second exposure process for additionally transferring a pattern having substantially the same shape as the first pattern in a region on the substrate corresponding to the buffer area of the cylindrical mask. Process and device manufacturing methods are provided.

FIG. 1 is a schematic view showing the overall configuration of a processing apparatus (exposure system) according to the first embodiment. FIG. 2 is a schematic view showing the arrangement of the illumination area and the projection area in FIG. FIG. 3 is a schematic view showing a configuration of a projection optical system applied to the processing apparatus (exposure system) of FIG. FIG. 4 is a perspective view of a rotary drum applied to the processing apparatus (exposure system) of FIG. FIG. 5 is a perspective view for explaining the relationship between a detection probe and a reader applied to the processing apparatus (exposure system) of FIG. FIG. 6A is a schematic view for explaining an exposure shielding mechanism applied to the processing apparatus (exposure system) of FIG. 6B is a schematic view for explaining an exposure shielding mechanism applied to the processing apparatus (exposure system) of FIG. FIG. 7 is a perspective view for explaining a cylindrical mask applied to the processing apparatus (exposure system) of FIG. FIG. 8 is a partially developed view for explaining a cylindrical mask applied to the processing apparatus (exposure system) of FIG. FIG. 9 is a schematic view for explaining another example of the exposure shielding mechanism. FIG. 10 is a schematic view for explaining another example of the exposure shielding mechanism. FIG. 11 is a schematic view for explaining another example of the exposure shielding mechanism. FIG. 12 is a schematic view for explaining another example of the exposure shielding mechanism. FIG. 13 is a partial development view for explaining a cylindrical mask. FIG. 14 is a partially developed view for explaining another cylindrical mask. FIG. 15 is a schematic view for explaining another example of the exposure shielding mechanism. FIG. 16 is a schematic view for explaining another example of the exposure shielding mechanism. FIG. 17 is a schematic view for explaining another example of the exposure shielding mechanism. FIG. 18 is a schematic view showing the overall configuration of a processing apparatus (exposure system) according to the second embodiment. FIG. 19 is a flowchart showing a device manufacturing method using the processing apparatus (exposure system) according to the first embodiment.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention is not limited to this. In the following embodiments, various processes for manufacturing one device will be described as an exposure apparatus used in a so-called roll-to-roll method in which a substrate is continuously subjected.

  Further, in the following description, an XYZ orthogonal coordinate system is set, and the positional relationship of each part will be described with reference to this XYZ orthogonal coordinate system. As an example, a predetermined direction in the horizontal plane is the X axis direction, a direction orthogonal to the X axis direction in the horizontal plane is the Y axis direction, a direction orthogonal to each of the X axis direction and the Y axis direction (ie vertical direction) the Z axis direction I assume.

First Embodiment
First, the configuration of the exposure apparatus of the present embodiment will be described using FIGS. 1 to 3. FIG. 1 is a schematic view showing an entire configuration of a processing apparatus according to the first embodiment. FIG. 2 is a schematic view showing the arrangement of the illumination area and the projection area when the cylindrical mask in FIG. 1 is used. FIG. 3 is a schematic view showing a configuration of a projection optical system applied when the cylindrical mask in FIG. 1 is used. The basic configuration of the exposure apparatus using the cylindrical mask shown in FIGS. 1 to 3 is disclosed in International Publication WO2013 / 094286 or International Publication WO2014 / 073535. As shown in FIG. 1, the processing apparatus 11 supports a first exposure apparatus (processing mechanism) EX1 using a cylindrical mask DM and a projection optical system PL, and a rotation for supporting a sheet-like substrate P to be exposed in a cylindrical shape. It includes a second exposure device EX2 installed around the drum (22), and a transfer device 9 for transferring the substrate P in the order of the first exposure device EX1 and the second exposure device EX2. A substrate P (sheet, film or the like) is supplied by the transport device 9 to the first exposure device EX1 and the second exposure device EX2. The substrate P is a transfer substrate to which a pattern is transferred. Also, the substrate P of the present embodiment is a flexible substrate that deforms along a wound drum or the like. In addition, the second exposure apparatus EX2 is disposed downstream of the first exposure apparatus EX1 in the transport direction of the substrate P. For example, a flexible substrate P pulled out from a supply roll (not shown) is sequentially processed by the processing apparatus 11 through n processing apparatuses, and is delivered to another processing apparatus by the transport apparatus 9, and the substrate P is There are device manufacturing systems that can be wound up on a recovery roll. Thus, the processing apparatus 11 may be configured as part of a roll-to-roll device manufacturing system (flexible display manufacturing line).

  The first exposure apparatus EX1 transfers, to the substrate P, a first pattern related to at least a pixel portion among device patterns for a display device including a large number of pixel portions. Here, the first pattern is a repetitive pattern periodically arranged in a matrix in two orthogonal directions. The first exposure apparatus EX1 is a so-called scanning exposure apparatus, which projects the image of the pattern formed on the cylindrical mask DM while synchronously driving the rotation of the cylindrical mask DM and the feeding of the flexible substrate P. Is projected onto the substrate P via the projection optical system PL (PL1 to PL6) of equal magnification (× 1). In the first exposure apparatus EX1 shown in FIG. 1, the Y axis of the XYZ orthogonal coordinate system is set parallel to the rotation center line AX1 of the first drum member 21. Similarly, the first exposure apparatus EX1 sets the Y axis of the XYZ orthogonal coordinate system in parallel with the rotation center line AX2 of the second drum member 22 which is a rotating drum.

  As shown in FIG. 1, the first exposure apparatus EX1 includes a mask holding device 12, an illumination mechanism IU, a projection optical system PL, an exposure blocking mechanism 80, and a control device 14. The first exposure apparatus EX <b> 1 rotationally moves the cylindrical mask DM held by the mask holding device 12 and conveys the substrate P by the conveying device 9. The illumination mechanism IU illuminates a part (illumination region IR) of the cylindrical mask DM held by the mask holding device 12 by the illumination light beam EL1 with uniform brightness. The projection optical system PL projects an image of a pattern in the illumination area IR on the cylindrical mask DM onto a portion (projection area PA) of the substrate P being transported by the transport device 9. With the movement of the cylindrical mask DM, the portion on the cylindrical mask DM arranged in the illumination region IR changes, and with the movement of the substrate P, the portion on the substrate P arranged in the projection region PA changes . Thus, an image of a predetermined pattern (mask pattern) on the cylindrical mask DM is projected onto the substrate P. The exposure blocking mechanism 80 switches between a state in which the image of the mask pattern is projected onto the substrate P and a state in which the image of the mask pattern is blocked and the image of the mask pattern is not projected onto the substrate P. The control device 14 controls each part of the first exposure apparatus EX1 to cause each part to execute a process. Further, in the present embodiment, the control device 14 also controls the transport device 9 and the second exposure device EX2.

  The control device 14 may be part or all of a higher-level control device that collectively controls a plurality of processing devices of the device manufacturing system described above. Further, the control device 14 may be a device that is controlled by the host control device and is separate from the host control device. The controller 14 includes, for example, a computer system. The computer system includes, for example, a CPU and hardware such as various memories, an OS, and peripheral devices. The process of the operation of each part of the processing device 11 is stored in a computer readable recording medium in the form of a program, and the computer system reads and executes this program to perform various processes. The computer system also includes a home page providing environment (or display environment) when it can connect to the Internet or an intranet system. Further, the computer readable recording medium includes a portable medium such as a flexible disk, a magneto-optical disk, a ROM, a CD-ROM, and a storage device such as a hard disk built in a computer system. The computer-readable recording medium is one that holds a program dynamically for a short time, such as a communication line when transmitting a program via a network such as the Internet or a communication line such as a telephone line, in that case Such as volatile memory in a computer system that is a server or a client of the above, including one that holds a program for a certain period of time. Also, the program may be for realizing a part of the functions of the processing device 11, or may be one that can realize the functions of the processing device 11 in combination with a program already recorded in the computer system. The host control device can be realized using a computer system, similarly to the control device 14.

  As shown in FIG. 1, the mask holding device 12 includes a first drum member 21 for holding the cylindrical mask DM, a guide roller 23 for supporting the first drum member 21, and a first drive unit 26 according to a control command of the control device 14. A driving roller 24 for driving the first drum member 21 and a first detector 25 for detecting the position of the first drum member 21 are provided.

  The first drum member 21 is a cylindrical member having a curved surface curved at a constant radius from a rotation center line AX1 (hereinafter also referred to as a first center axis AX1) which is a predetermined axis, and rotates around the predetermined axis. . The first drum member 21 forms a first surface P1 on which the illumination region IR on the cylindrical mask DM is disposed. In the present embodiment, the first surface P1 includes a surface (hereinafter referred to as a cylindrical surface) obtained by rotating a line segment (generation line) around an axis (first central axis AX1) parallel to the line segment. The cylindrical surface is, for example, the outer peripheral surface of a cylinder, the outer peripheral surface of a cylinder, or the like. The first drum member 21 is made of, for example, glass, quartz or the like, and is in the shape of a cylinder having a constant thickness, and the outer peripheral surface (cylindrical surface) forms the first surface P1. That is, in the present embodiment, the illumination region IR on the cylindrical mask DM is curved in a cylindrical surface shape having a constant radius r1 from the rotation center line AX1. As described above, the first drum member 21 has a curved surface which is curved at a constant radius from the rotation center line AX1 which is a predetermined axis. Then, the first drum member 21 can be driven by the drive roller 24 and can rotate around a rotation center line AX1 which is a predetermined axis.

  The cylindrical mask (cylindrical mask) DM is, for example, a transmission-type planar shape in which a pattern is formed by a light shielding layer such as chromium on one surface of a strip-like ultrathin glass plate (for example, 100 μm to 500 μm thick) with good flatness. Created as a sheet mask. The mask holding device 12 is used in a state in which the cylindrical mask DM is curved following the curved surface of the outer peripheral surface of the first drum member 21 and wound (adhered) around the curved surface. The cylindrical mask DM is detachably provided to the first drum member 21. The cylindrical mask DM will be described later.

  The cylindrical mask DM is made of an extremely thin glass plate, and instead of winding the cylindrical mask DM around the first drum member 21 made of a transparent cylindrical base material, chromium is directly applied to the outer peripheral surface of the first drum member 21 made of a transparent cylindrical base material. The mask pattern by the light shielding layer such as may be drawn and integrated. Also in this case, the first drum member 21 functions as a support member for the pattern of the cylindrical mask DM.

  The first detector 25 optically detects the rotational position of the first drum member 21 and is constituted of, for example, a rotary encoder or the like. The first detector 25 outputs information indicating the detected rotational position of the first drum member 21, for example, a two-phase signal from an encoder head described later, to the control device 14. The first drive unit 26 including an actuator such as an electric motor adjusts torque and rotation speed for rotating the drive roller 24 in accordance with a control signal input from the control device 14. The control device 14 controls the rotational position of the first drum member 21 by controlling the first drive unit 26 based on the detection result of the first detector 25. Then, the control device 14 controls one or both of the rotational position and the rotational speed of the cylindrical mask DM held by the first drum member 21.

  The second exposure apparatus EX2 transfers the pattern to an area of the substrate P where the pattern is not transferred by the first exposure apparatus EX1 or an area where the transfer of the pattern is not completed by the first exposure apparatus EX1. The second exposure apparatus EX2 is a so-called direct writing type exposure apparatus. The second exposure apparatus EX2 is one-dimensionally scanned by the polygon scanning unit PO while the substrate P is transported at a constant speed in the longitudinal direction, as disclosed in, for example, International Publication WO 2014/034161. A laser beam for drawing is focused as spot light on the substrate P, and during one-dimensional scanning of the spot light, the laser beam is turned ON / OFF at high speed based on pattern data (CAD data), thereby the substrate An electronic circuit pattern or the like is drawn (exposed) on P. The exposure apparatus EX2 can perform patterning processing by irradiating the substrate P at a specific position with exposure light (spot light) even without the cylindrical mask DM. Here, the second exposure apparatus EX is not limited to a direct drawing type exposure apparatus, and various types of exposure apparatuses can be used. For example, the exposure apparatus EX2 can also use a processing apparatus that performs so-called proximity exposure on the substrate P. The proximity type exposure apparatus arranges a transmission type cylindrical mask opposite to the substrate P supported by the second drum member 22 with a minute gap, and illuminates from an illumination mechanism installed inside the transmission type cylindrical mask. Non-contact exposure is performed by irradiating light onto the mask pattern and directly irradiating the substrate P with exposure light (shadow image) transmitted through the mask pattern. The second exposure apparatus EX2 may be a projection exposure apparatus that exposes the image of the mask pattern through the projection optical system, as in the second exposure apparatus EX1. Furthermore, the second exposure apparatus EX2 uses, for example, a maskless exposure apparatus that projects and exposes a pattern image formed by a variable mask (DMD: digital mirror device) disclosed in International Publication WO 2014/034161. The substrate P wound around the two-drum member (rotary drum) 22 may be exposed to a pattern.

  The transport device 9 includes a drive roller DR4, a first guide member 31, and a second drum member 22 forming a second surface P2 on which the projection area PA on the substrate P is disposed, a second guide member 33, and drive rollers DR4 and DR5. , A second detector 35 and a second drive unit 36.

  In the present embodiment, the substrate P transported to the drive roller DR4 from the upstream of the transport path is transported to the first guide member 31 such as an air turn bar via the drive roller DR4. The substrate P having passed through the first guide member 31 is supported by the surface of a cylindrical or cylindrical second drum member 22 with a radius r2, and is transported to a second guide member 33 such as an air turn bar. The substrate P having passed through the second guide member 33 is transported to the downstream of the transport path. The rotation center line AX2 of the second drum member 22 and the rotation center lines of the drive rollers DR4 and DR5 are both set to be parallel to the Y axis.

  The first guide member 31 and the second guide member 33 adjust the tension or the like acting on the substrate P in the transport path by moving in the transport direction of the substrate P, for example. Also, by making the drive roller DR4 and the drive roller DR5 movable in the width direction (Y direction) of the substrate P, for example, the position of the substrate P wound around the outer periphery of the second drum member 22 in the Y direction, etc. Can be adjusted. In addition, the conveyance apparatus 9 should just be able to convey the board | substrate P along the projection area | region PA of the projection optical system PL, and the structure of the conveyance apparatus 9 can be changed suitably.

  The second drum member 22 is a cylindrical member having a curved surface curved at a constant radius from a rotation center line AX2 (hereinafter, also referred to as a second center axis AX2) which is a predetermined axis, and rotates around the predetermined axis. It is a rotating drum. The second drum member 22 forms a second surface (supporting surface) p2 that supports a portion including the projection area PA on the substrate P on which the imaging light flux from the projection optical system PL is projected in an arc shape (cylindrical shape) Do. In the present embodiment, the second drum member 22 is a part of the transfer device 9 and also serves as a support member (substrate stage) for supporting the substrate P to be exposed. That is, the second drum member 22 may be a part of the first exposure apparatus EX1 (or the second exposure apparatus EX2). Thus, the second drum member 22 is rotatable around its rotation center line AX2 (second center axis AX2), and the substrate P follows the outer peripheral surface (cylindrical surface) on the second drum member 22. And the projection area PA is disposed in a part of the curved portion.

  In the present embodiment, the second drum member 22 is rotated by the torque supplied from the second drive unit 36 including an actuator such as an electric motor. The second detector 35 is also configured by, for example, a rotary encoder, and optically detects a change in rotational position of the diffraction grating of the scale disk that rotates with the second drum member 22. The second detector 35 controls information indicating the detected change in rotational position of the second drum member 22 (for example, two-phase signals from each of encoder heads EN1, EN2, EN3, EN4, EN5, EM6 described later, etc.) It outputs to the device 14. Therefore, digital counter circuits corresponding to each of the encoder heads EN1 to EM6 are provided in the control device 14, and the control device 14 is supported on the outer peripheral surface of the second drum member 22 by the count value of each counter circuit. The movement amount of the substrate P is calculated. The second drive unit 36 adjusts the torque for rotating the second drum member 22 in accordance with the control signal supplied from the control device 14. The control device 14 controls the rotational position of the second drum member 22 by controlling the second drive unit 36 based on the detection result of the second detector 35, and the first drum member 21 (cylindrical mask DM) and the like. The second drum member 22 is synchronously moved (synchronously rotated).

  The first exposure apparatus EX1 of the present embodiment is an exposure apparatus that assumes mounting of a so-called multi-lens type projection optical system PL as disclosed in International Publication WO 2014/034161. The projection optical system PL includes a plurality of projection modules that project an image of a portion of the pattern of the cylindrical mask DM. For example, in FIG. 1, three projection modules (projection optical systems) PL1, PL3, and PL5 are disposed at constant intervals in the Y direction on the left side of the center plane P3, and three projection modules (projection System) PL2, PL4 and PL6 are arranged at regular intervals in the Y direction.

  In such a multi-lens type first exposure apparatus EX1, desired end portions of areas (projection areas PA1 to PA6) exposed by the plurality of projection modules PL1 to PL6 are overlapped with each other by scanning. Project the whole picture of the pattern. In such a first exposure apparatus EX1, even if the Y-direction size of the pattern on the cylindrical mask DM becomes large and the necessity of handling the substrate P having a large Y-direction width inevitably arises, the projection module PA, Since it is only necessary to add the module on the illumination mechanism IU side corresponding to the projection module PA in the Y direction, there is an advantage that it can easily cope with the enlargement of the panel size (the width of the substrate P).

  Note that the first exposure apparatus EX1 may not be a multi-lens system. For example, when the dimension in the width direction of the substrate P is small to some extent, the first exposure apparatus EX1 may project an image of the full width of the pattern onto the substrate P by one projection module. In addition, each of the plurality of projection modules PL1 to PL6 may project a pattern corresponding to one device. That is, the first exposure apparatus EX1 may project patterns for a plurality of devices in parallel by a plurality of projection modules.

  The illumination mechanism IU of the present embodiment includes the light source device 13 and an illumination optical system. The illumination optical system includes a plurality (for example, six) of illumination modules IL aligned in the Y-axis direction corresponding to each of the plurality of projection modules PL1 to PL6. The light source device includes, for example, a lamp light source such as a mercury lamp, or a solid light source such as a laser diode or a light emitting diode (LED). The illumination light emitted from the light source device is, for example, a bright line (g line, h line, i line) emitted from a lamp light source, far ultraviolet light (DUV light) such as KrF excimer laser light (wavelength 248 nm), ArF excimer laser light (A wavelength of 193 nm) Or, after amplification of pulsed seed light in the infrared wavelength range with a fiber amplifier, a fiber amplifier laser or the like that obtains ultraviolet pulsed light (wavelength 355 nm) by a wavelength conversion element (harmonic generation crystal etc.) is there. The illumination light emitted from the light source device is equalized in illuminance distribution, and is distributed to the plurality of illumination modules IL via a light guide member such as an optical fiber, for example.

  Each of the plurality of illumination modules IL includes a plurality of optical members such as a lens. In the present embodiment, light emitted from the light source device and passing through any of the plurality of illumination modules IL is referred to as an illumination light flux EL1. Each of the plurality of illumination modules IL includes, for example, an integrator optical system, a rod lens, a fly's eye lens, and the like, and illuminates the illumination region IR with the illumination light beam EL1 of uniform illuminance distribution. In the present embodiment, the plurality of illumination modules IL are disposed inside the cylindrical mask DM. Each of the plurality of illumination modules IL illuminates each illumination area IR of the mask pattern formed on the outer peripheral surface of the cylindrical mask DM from the inside of the cylindrical mask DM.

  FIG. 2 is a diagram showing the arrangement of the illumination area IR and the projection area PA in the present embodiment. In FIG. 2, a plan view of the illumination area IR on the cylindrical mask DM disposed on the first drum member 21 as viewed from the −Z side (the left side in FIG. 2) and the second drum member 22 The top view (figure on the right side in FIG. 2) which looked at projection area PA on the board | substrate P arrange | positioned from the + Z side is shown in figure. The code | symbol Xs in FIG. 2 shows the rotation direction (movement direction) of the 1st drum member 21 or the 2nd drum member 22. As shown in FIG.

  The plurality of illumination modules IL respectively illuminate the first to sixth illumination areas IR1 to IR6 on the cylindrical mask DM. For example, the first illumination module IL illuminates the first illumination area IR1, and the second illumination module IL illuminates the second illumination area IR2.

  The first illumination area IR1 will be described as a trapezoidal area elongated in the Y direction, but in the case of a projection optical system having a configuration to form an intermediate image plane like the projection optical system (projection module) PL, the intermediate image Since a field stop plate having a trapezoidal opening can be disposed at the position of (1), it may be a rectangular area including the trapezoidal opening. The third illumination region IR3 and the fifth illumination region IR5 are regions of the same shape as the first illumination region IR1, respectively, and are arranged at constant intervals in the Y-axis direction. Further, the second illumination area IR2 is a trapezoidal (or rectangular) area symmetrical to the first illumination area IR1 with respect to the central plane P3. The fourth illumination region IR4 and the sixth illumination region IR6 are regions of the same shape as the second illumination region IR2, respectively, and are arranged at constant intervals in the Y-axis direction.

  As shown in FIG. 2, when viewed along the circumferential direction of the first surface P1, each of the first to sixth illumination regions IR1 to IR6 has a triangular portion of the oblique side of the trapezoidal illumination region adjacent to each other. It is arranged to overlap (to overlap). Therefore, for example, the first area A1 on the cylindrical mask DM passing the first illumination area IR1 by the rotation of the first drum member 21 passes the second illumination area IR2 by the rotation of the first drum member 21. It partially overlaps with the upper second area A2.

  In the present embodiment, the cylindrical mask DM includes a pattern formation area A3 in which a pattern is formed and a pattern non-formation area A4 in which a pattern is not formed. The non-pattern formation area A4 is disposed to surround the pattern formation area A3 in a frame shape, and has a characteristic of shielding the illumination light beam EL1. The pattern formation area A3 of the cylindrical mask DM moves in the moving direction Xs as the first drum member 21 rotates, and each partial area in the Y axis direction of the pattern formation area A3 is the first to sixth illumination areas Pass one of IR1 to IR6. In other words, the first to sixth illumination areas IR1 to IR6 are arranged to cover the full width of the pattern formation area A3 in the Y-axis direction.

  As shown in FIG. 1, each of the plurality of projection modules PL1 to PL6 aligned in the Y-axis direction corresponds to each of the first to sixth illumination modules IL on a one-to-one basis, and is illuminated by the corresponding illumination modules An image of a partial pattern of the cylindrical mask DM appearing in the illumination area IR is projected onto each projection area PA on the substrate P.

  For example, the first projection module PL1 corresponds to the first illumination module IL, and the image of the pattern of the cylindrical mask DM in the first illumination area IR1 (see FIG. 2) illuminated by the first illumination module IL is displayed on the substrate P On the first projection area PA1 of the The third projection module PL3 and the fifth projection module PL5 correspond to the third to fifth illumination modules IL, respectively. The third projection module PL3 and the fifth projection module PL5 are disposed at positions overlapping with the first projection module PL1 when viewed from the Y-axis direction.

  Further, the second projection module PL2 corresponds to the second illumination module IL, and the image of the pattern of the cylindrical mask DM in the second illumination area IR2 (see FIG. 2) illuminated by the second illumination module IL is displayed on the substrate P. To the second projection area PA2 of When viewed in the Y-axis direction, the second projection module PL2 is disposed at a symmetrical position with respect to the first projection module PL1 across the central plane P3.

  The fourth projection module PL4 and the sixth projection module PL6 are respectively disposed in correspondence with the fourth and sixth illumination modules IL, and the fourth projection module PL4 and the sixth projection module PL6 are viewed from the Y-axis direction, It is arrange | positioned in the position which overlaps with 2nd projection module PL2.

  In the present embodiment, light reaching each of the illumination areas IR1 to IR6 on the cylindrical mask DM from the respective illumination modules IL of the illumination mechanism IU is referred to as an illumination luminous flux EL1. In addition, the light beams subjected to intensity distribution modulation according to the partial pattern of the cylindrical mask DM appearing in the respective illumination regions IR1 to IR6 and entering the respective projection modules PL1 to PL6 to reach the respective projection regions PA1 to PA6 It is assumed to be EL2. Then, among the imaging light beams EL2 reaching the projection areas PA1 to PA6, the chief ray passing through the center points of the projection areas PA1 to PA6 is the second central axis AX2 of the second drum member 22, as shown in FIG. As seen from the above, they are respectively disposed at positions (specific positions) at an angle θ in the circumferential direction across the center plane P3.

  As shown in FIG. 2, the image of the pattern in the first illumination area IR1 is projected on the first projection area PA1, the image of the pattern in the third illumination area IR3 is projected on the third projection area PA3, and the fifth illumination area The image of the pattern in IR5 is projected onto the fifth projection area PA5. In the present embodiment, the first projection area PA1, the third projection area PA3, and the fifth projection area PA5 are arranged in a line in the Y-axis direction.

  The image of the pattern in the second illumination area IR2 is projected onto the second projection area PA2. In the present embodiment, the second projection area PA2 is disposed symmetrically to the first projection area PA1 with respect to the central plane P3 when viewed from the Y-axis direction. In addition, the image of the pattern in the fourth illumination region IR4 is projected to the fourth projection region PA4, and the image of the pattern in the sixth illumination region IR6 is projected to the sixth projection region PA6. In the present embodiment, the second projection area PA2, the fourth projection area PA4, and the sixth projection area PA6 are arranged in a line in the Y-axis direction.

  When viewed along the circumferential direction of the second surface p2, each of the first to sixth projection regions PA1 to PA6 is a projection region (odd-numbered and even-numbered) adjacent in the direction parallel to the second central axis AX2 It arrange | positions so that the edge part (trapezoid triangle part) of each other may overlap. Therefore, for example, the third area A5 on the substrate P passing the first projection area PA1 by the rotation of the second drum member 22 is on the substrate P passing the second projection area PA2 by the rotation of the second drum member 22. It partially overlaps with the fourth area A6. The first projection area PA1 and the second projection area PA2 are arranged such that the exposure amount in the area where the third area A5 and the fourth area A6 overlap is substantially the same as the exposure amount in the non-overlapping area. The shape etc. are set. Thus, the first to sixth projection areas PA1 to PA6 are arranged to cover the entire width in the Y direction of the exposure area A7 exposed on the substrate P.

  Next, the detailed configuration of the projection optical system PL of the present embodiment will be described with reference to FIG. In the present embodiment, each of the second to fifth projection modules PL2 to PL5 has the same configuration as that of the first projection module PL1. Therefore, as a representative of the projection optical system PL, the configuration of the first projection module PL1 will be described, and the description of each of the second to fifth projection modules PL2 to PL5 will be omitted.

  In the first projection module PL1 shown in FIG. 3, the first optical system 41 for forming an image of the pattern of the cylindrical mask DM disposed in the first illumination region IR1 on the intermediate image plane P7 and the first optical system 41 are formed. A second optical system 42 for re-forming at least a part of the intermediate image on the first projection area PA1 of the substrate P, and a first field stop 43 disposed on an intermediate image plane P7 on which the intermediate image is formed .

  The first projection module PL1 further includes a focus correction optical member 44, an image shift correction optical member 45, a rotation correction mechanism 46, and a magnification correction optical member 47. The focus correction optical member 44 is a focus adjustment device that finely adjusts the focus state of a pattern image (hereinafter referred to as a projection image) of a mask formed on the substrate P. Further, the correction optical member 45 is a shift adjustment device that laterally shifts the projected image in the image plane. The magnification correction optical member 47 is a shift adjustment device that slightly corrects the magnification of the projected image. The rotation correction mechanism 46 is a shift adjustment device that slightly rotates the projected image in the image plane.

  The imaging light beam EL2 from the pattern of the cylindrical mask DM is emitted from the first illumination region IR1 in the normal direction (D1), passes through the focus correction optical member 44, and is incident on the image shift correction optical member 45. The imaging light beam EL 2 transmitted through the image shift correction optical member 45 is reflected by the first reflection surface (plane mirror) p 4 of the first deflection member 50 which is an element of the first optical system 41, and passes through the first lens group 51. The light is reflected by the first concave mirror 52, passes through the first lens group 51 again, is reflected by the second reflecting surface (plane mirror) p 5 of the first deflection member 50, and enters the first field stop 43. The imaging light beam EL2 having passed through the first field stop 43 is reflected by the third reflection surface (plane mirror) p8 of the second deflection member 57 which is an element of the second optical system 42, and passes through the second lens group 58 The light is reflected by the second concave mirror 59, passes through the second lens group 58 again, is reflected by the fourth reflecting surface (plane mirror) p9 of the second deflection member 57, and enters the magnification correction optical member 47. The image forming light beam EL2 emitted from the magnification correction optical member 47 is incident on the first projection area PA1 on the substrate P, and the image of the pattern appearing in the first illumination area IR1 is equal-magnified in the first projection area PA1 (× Projected in 1).

  When the radius of the cylindrical mask DM shown in FIG. 1 is radius r1 and the radius of the cylindrical surface of the substrate P wound around the second drum member 22 is radius r2, the radius r1 and the radius r2 are equal, each projection module The chief ray of the imaging light beam EL2 on the mask side of PL1 to PL6 is inclined to pass through the central axis AX1 of the cylindrical mask DM, but the inclination angle is the inclination angle θ of the chief ray of the imaging light EL2 on the substrate side This is the same as (± θ with respect to the central plane P3).

  The angle θ3 formed by the third reflection surface p8 of the second deflection member 57 with the second optical axis AX4 is substantially the same as the angle θ2 formed by the second reflection surface p5 of the first deflection member 50 with the first optical axis AX3. is there. Further, an angle θ4 formed by the fourth reflective surface p9 of the second deflection member 57 with the second optical axis AX4 is substantially equal to an angle θ1 formed by the first reflective surface p4 of the first deflection member 50 with the first optical axis AX3. It is the same. In order to give the above-mentioned inclination angle θ, the angle θ1 with respect to the optical axis AX3 of the first reflection surface p4 of the first deflection member 50 shown in FIG. The angle θ4 of the reflecting surface p9 with respect to the optical axis AX4 is smaller than 45 ° by Δθ4. Δθ1 and Δθ4 are set to the relationship of Δθ1 = Δθ4 = θ / 2 with respect to the angle θ shown in FIG.

  FIG. 4 is a perspective view of a rotary drum applied to the processing apparatus (exposure system) of FIG. FIG. 5 is a perspective view for explaining the relationship between a detection probe and a reader applied to the processing apparatus (exposure system) of FIG. In FIG. 4, for convenience, only the second to fourth projection areas PA2 to PA4 are illustrated, and the first, fifth, and sixth projection areas PA1, PA5, and PA6 are not illustrated.

  The second detector 35 shown in FIG. 1 optically detects the rotational position of the second drum member 22. The second detector 35 has a scale disk (scale member) SD with high roundness and an encoder head as a reader. Includes EN1, EN2, EN3, EN4, EN5, EN6.

  The scale disc SD is fixed to the end of the second drum member 22 so as to be orthogonal to the rotation axis ST. For this reason, the scale disc SD rotates integrally with the rotation axis ST around the rotation center line AX2. A scale portion GP is engraved on the outer peripheral surface of the scale disk SD. In the scale portion GP, along the circumferential direction in which the second drum member 22 rotates, grid-like graduations are arranged annularly at, for example, a 20 μm pitch, and the rotation axis ST (second central axis AX2) together with the second drum member 22 Rotate around The encoder heads EN1, EN2, EN3, EN4, EN5, EN6 are disposed around the scale portion GP when viewed from the rotation axis ST (the second central axis AX2). The encoder heads EN1, EN2, EN3, EN4, EN5 and EN6 are disposed to face the scale part GP, project a laser beam (diameter of about 1 mm) onto the scale part GP, and photoelectrically reflect the reflected diffraction light from the grid-like scale. By detecting, it is possible to read the circumferential positional change of the scale portion GP in a non-contact manner, for example, with a resolution of about 0.1 μm. The encoder heads EN <b> 1 to EN <b> 6 are arranged at different positions in the circumferential direction of the second drum member 22.

  The encoder heads EN1 to EN6 are reading devices having measurement sensitivity (detection sensitivity) with respect to variation in displacement of the scale portion GP in the tangential direction (in the XZ plane). As shown in FIG. 4, the installation orientations of the encoder heads EN1, EN2, EN3, EN4, EN5, EN6 (angular directions in the XZ plane centering on the rotation center line AX2) are installation orientations Le1, Le2, Le3, Le, In the case of Le4, Le5, Le6, the encoder heads EN1, EN2 are arranged such that the installation azimuth lines Le1, Le2 are at an angle of ± θ ° with respect to the central plane P3. The angle θ is, for example, 15 °. The installation azimuth lines Le1 to Le6 pass through the projection position on the scale part GP of the laser beam (diameter of about 1 mm) projected from the encoder heads EN1 to EN6.

  The projection modules PL1 to PL6 illustrated in FIG. 3 are processing units of the first exposure apparatus EX1 that performs an irradiation process of irradiating the substrate P with light by using the substrate P as an object to be processed. In the first exposure apparatus EX1, chief rays of two imaging light beams EL2 enter the substrate P with respect to the substrate P. The projection modules PL1, PL3, PL5 are the first processing units, the projection modules PL2, PL4, PL6 are the second processing units, and principal rays of two imaging light beams EL2 enter the substrate P with respect to the substrate P The position is a specific position at which the substrate P is irradiated with light. The specific position is a position of an angle ± θ in the circumferential direction across the central plane P3 on the curved substrate P on the second drum member 22 as viewed from the second central axis AX2 of the second drum member 22. The installation azimuth line Le1 of the encoder head EN1 has one inclination angle θ with respect to the central plane P3 of the chief ray passing through the central points of the projection areas (projection fields) PA1, PA3 and PA5 of the odd-numbered projection modules PL1, PL3 and PL5. The installation azimuth line Le2 of the head EN2 has an inclination angle θ with respect to the central plane P3 of the chief ray passing through the central points of the projection areas (projection fields) PA2, PA4 and PA6 of the even-numbered projection modules PL2, PL4 and PL6. Match. For this reason, the encoder heads EN1 and EN2 serve as a reading device for reading the scale portion GP located in the direction connecting the specific position and the second central axis AX2.

  The encoder heads EN3, EN4, and EN5 are disposed upstream of the substrate P in the feed direction, specifically, on the upstream side of the exposure position (projection area) of the first exposure apparatus EX1. Further, the encoder head EN6 is downstream of the exposure position (projection area) of the first exposure apparatus EX1 and downstream of the exposure position (projection area) of the first exposure apparatus EX2 on the downstream side in the feeding direction of the substrate P. Is located in That is, each of the encoder heads EN1 to EN6 is directed from the upstream side to the downstream side in the feed direction of the substrate P, for the encoder head EN3, encoder head EN4, encoder head EN5, encoder head EN1, encoder head EN2, encoder head EN6. Arranged in order.

  The encoder heads EN3 and EN4 are arranged at positions where pre-alignment (rough alignment) is performed in the feeding direction of the substrate P. The position at which pre-alignment is performed is a portion on the upstream side of the second drum member 22 in the feeding direction of the substrate P, and is a position where the substrate P is wound around the second drum member 22. The encoder head EN5 is disposed at the position of fine alignment for the first exposure apparatus EX1 in the feeding direction of the substrate P. The encoder head EN6 is disposed at the position of fine alignment for the second exposure apparatus EX2 in the feeding direction of the substrate P.

  As shown in FIGS. 1 and 5, on a portion of the substrate P supported on the curved surface of the second drum member 22, an image of the portion of the mask pattern projected by the projection optical system PL shown in FIG. Alignment microscopes AMG1, AMG2, AMG3 and AMG4 for detecting alignment marks and the like formed in advance on the substrate P are provided for relative alignment (alignment). The alignment microscopes AMG 1, AMG 2, AMG 3, AMG 4 have a detection probe for detecting a specific pattern discretely or continuously formed on the substrate P, and a detection region by this detection probe is more than the substrate P at the above-mentioned specific position. The pattern detection device is disposed around the second drum member 22 so as to be set on the rear side (upstream side) in the feeding direction of

  The alignment microscopes AMG 1, AMG 2, AMG 3, and AMG 4 are arranged in this order from the upstream side in the feeding direction of the substrate P. The alignment microscopes AMG1 and AMG2 are arranged at positions where pre-alignment is performed in the feeding direction of the substrate P. The alignment microscope AMG3 is disposed at the alignment position of the first exposure apparatus EX1 in the feeding direction of the substrate P. That is, the alignment microscope AMG3 is disposed upstream of the area to which the pattern of the first exposure apparatus EX1 is transferred in the feeding direction of the substrate P. The alignment microscope AMG4 is disposed at the alignment position of the second exposure apparatus EX2 in the feeding direction of the substrate P. That is, the alignment microscope AMG4 is disposed on the upstream side of the area to which the pattern of the second exposure apparatus EX2 is transferred in the feeding direction of the substrate P.

  As shown in FIG. 5, the alignment microscopes AMG1 and AMG2 have a plurality of (for example, four) detection probes arranged in a line in the Y-axis direction (the width direction of the substrate P). Although not shown, the alignment microscopes AMG3 and AMG4 have the same configuration except that the position in the feeding direction of the substrate P is different. Alignment microscopes AMG 1, AMG 2, AMG 3, AMG 4 are detection probes at both ends of the second drum member 22 in the Y-axis direction, and can always observe or detect alignment marks formed near both ends of the substrate P. The alignment microscopes AMG 1, AMG 2, AMG 3 and AMG 4 are detection probes other than both ends of the second drum member 22 in the Y-axis direction (the width direction of the substrate P), for example, along the longitudinal direction on the substrate P It is possible to observe or detect an alignment mark formed in a margin or the like between pattern formation areas of a plurality of display panels formed.

  As shown in FIG. 5, when viewed from the rotation center line AX2 in the XZ plane, it is in the same direction as the detection center of the observation direction AM1 (toward the second central axis AX2) of the substrate P by the alignment microscope AMG1. The encoder head EN3 is disposed on the installation azimuth line Le3 set in the radial direction of the scale portion GP. In addition, when viewed from the rotation center line AX2 in the XZ plane, the radial direction of the scale portion GP is in the same direction as the detection center of the observation direction AM2 of the substrate P by the alignment microscope AMG2 (toward the rotation center line AX2). The encoder head EN4 is disposed on each of the installation azimuth lines Le4 set to. Thus, the detection probes of the alignment microscopes AMG1 and AMG2 are disposed around the second drum member 22 when viewed from the second central axis AX2, and connect the position at which the encoder heads EN3 and EN4 are disposed and the second central axis AX2. The directions (the installation orientation lines Le3 and Le4) are arranged to coincide with the direction connecting the second central axis AX2 and the detection regions of the alignment microscopes AMG1 and AMG2. The positions of the alignment microscopes AMG1 and AMG2 and the encoder heads EN3 and EN4 around the rotation center line AX2 are the sheet entry area IA where the substrate P starts to contact the second drum member 22, and the second drum member 22. And the sheet release area OA from which the substrate P is released. Further, the encoder head is placed on the installation azimuth line Le5 set in the radial direction of the scale portion GP so as to be in the same direction as the detection center of the observation direction (toward the second central axis AX2) of the substrate P by the alignment microscope AMG3. EN5 is arranged. The encoder head EN6 is disposed on the installation azimuth line Le6 set in the radial direction of the scale portion GP so as to be in the same direction as the detection center of the observation direction of the substrate P (toward the second central axis AX2) by the alignment microscope AMG4. It is arranged.

  The alignment microscopes AMG1, AMG2, AMG3, and AMG4 transmit the alignment marks (formed in a region within several tens of μm to several hundreds of μm square) formed near the end portion of the substrate P in the Y direction, In this state, the image is detected at high speed by the image pickup element or the like, and the image of the mark is sampled at high speed in the microscopic field of view (imaging range). The mark position on the substrate P and the second drum member 22 are stored by storing the rotational angle position of the scale disc SD sequentially measured by the corresponding encoder heads EN3, EN4, EN5, EN6 at the moment when the sampling is performed. The correspondence relationship with the rotational angle position of is determined.

  When a mark detected by the alignment microscope AMG1 is detected by the alignment microscope AMG2, the difference between the angular position measured and stored by the encoder head EN3 and the angular position measured and stored by the encoder head EN4 is previously It compares with the reference value corresponding to the opening angle of the installation direction lines Le3 and Le4 of the two alignment microscopes AMG1 and AMG2 which are precisely calibrated. Thereby, the positional deviation and the extension of the substrate P can be detected. For example, when there is a difference between the difference value and the reference value, the substrate P is slightly slipped on the second drum member 22 between the sheet entry area IA and the sheet separation area OA, or the feed direction ( Expansion and contraction in the circumferential direction) can be detected. Further, the detection result of the mark position by the alignment microscope AGM3, the detection result of the rotation angle of the second drum member 22 by the encoder EN5, the detection result of the mark position by the alignment microscope AGM2 on the upstream side, and the second drum member 22 by the encoder EN4. By comparing the detection result of the rotation angle, it is possible to detect the fluctuation of the substrate immediately before the exposure by the first exposure apparatus EX1. Similarly, by comparing the detection result of the alignment microscope AGM4 and the detection result of the encoder EN6 with the detection result of the upstream alignment microscope AGM3 and the detection result of the encoder EN5, the substrate immediately before exposure by the second exposure apparatus EX2 Fluctuations can be detected. The control device 14 can transfer a suitable pattern onto the substrate by adjusting the exposure conditions (such as a slight rotation error and a magnification error of the projection image) based on the detection result.

  Next, the exposure shielding mechanism 80 will be described with reference to FIGS. 6A and 6B in addition to FIG. FIG. 6A is a schematic view for explaining an exposure shielding mechanism applied to the processing apparatus (exposure system) of FIG. 6B is a schematic view for explaining an exposure shielding mechanism applied to the processing apparatus (exposure system) of FIG.

  The exposure blocking mechanism 80 switches between a state in which the image of the pattern of the cylindrical mask DM is projected onto the substrate P and a state in which the image of the mask pattern is blocked and the image of the pattern of the cylindrical mask DM is not projected onto the substrate P. The exposure shielding mechanism 80 has a shielding plate 81 and a driving mechanism 82 for moving the shielding plate 81, as shown in FIGS. 6A and 6B. The shielding plate 81 is disposed between the end of the projection optical system PL on the second drum member 22 side and the second drum member 22. That is, the shielding plate 81 faces the second drum member 22.

  The shield plate 81 has a plate-like length in the Y-axis direction covering all the projected areas (projected fields of view) PA1 to PA6, and the position in the Y axis direction corresponds to all projected areas (projected fields of view) PA1 to PA6 Overlapping the area of Further, as shown in FIG. 6A, the shielding plate 81 has an arc shape in which the shape on the ZX plane is curved along the second drum member 22. The shield plate 81 has a length in the transport direction of the substrate P longer than a length including the entire area of the projection areas (projection field of view) PA1 to PA6. That is, in the transport direction of the substrate P, the distance is set to be longer than the distance connecting the upstream end of the projection area (projection field of view) PA1 and the downstream end of the projection area (projection field of view) PA2.

  The shielding plate 81 has a function of blocking at least a surface on the side of the projection optical system PL from the light (light flux forming the projection image) emitted from the projection optical system PL. The shielding plate 81 preferably has a low reflectance as much as possible so as to absorb most of the light emitted from the projection optical system PL, but may have a constant reflectance.

  The drive mechanism 82 has a support portion 82a connected to the shielding plate 81, and a drive portion 82b for moving the support portion 82a. The support portion 82a is a rod-like member, one end of which is fixed to the shielding plate 81, and the other end of which is supported by the drive portion 82b. The driving unit 82 b moves the supporting unit 82 a in the direction of the arrow 84 along the transport direction of the substrate P. The drive mechanism 82 overlaps the projection area (projection field of view) PA1 to PA6 from the position where the shielding plate 81 does not overlap the projection area (projection field of view) PA1 to PA6 to the projection area (projection field of view) PA1 to PA6 or The position is moved to a position not overlapping the projection area (projection field of view) PA1 to PA6. The position where the shielding plate 81 overlaps the projection area (projected field of view) PA1 to PA6 is a position where the shielding plate 81 blocks the imaging light beam EL2 irradiated to each of the projection areas (projected field of view) PA1 to PA6. This position is indicated by 81a. That is, the drive mechanism 82 can move the shielding plate 81 to any position between the position shown by the shielding plate 81 and the position shown by the shielding plate 81 a along the transport direction of the substrate P.

  The exposure shielding mechanism 80 is configured as described above, and the driving mechanism 82 of the present embodiment is provided with the support portion 82 a and the driving portion 82 b only at one end of the shielding plate 81. It may be provided at both ends of the direction. In addition, a guide mechanism such as a rail that assists the movement of the shielding plate 81 may be provided at the end on the side where the moving mechanism is not provided.

  Next, a cylindrical mask will be described using FIGS. 7 and 8. FIG. 7 is a perspective view for explaining a cylindrical mask applied to the processing apparatus (exposure system) of FIG. FIG. 8 is a partially developed view for explaining a cylindrical mask applied to the processing apparatus (exposure system) of FIG. The cylindrical mask DM is a mask for transferring a device pattern for a display device including a large number of pixel portions to the substrate P.

  In the cylindrical mask DM of the present embodiment, a repetitive pattern area 90 and a buffer area 92 are formed along a cylindrical outer peripheral surface having a constant radius from a predetermined center line. Specifically, in the cylindrical mask DM, the repetitive pattern area 90 and the buffer area 92 are alternately formed adjacent to each other in the rotational direction of the cylindrical mask DM, that is, in the circumferential direction. The number of repetitive pattern areas 90 and buffer areas 92 arranged in the circumferential direction of the cylindrical mask DM is not particularly limited.

  In the repetitive pattern area 90, a plurality of first patterns related to at least the pixel portion in the device pattern are periodically formed in each of the circumferential direction of the outer peripheral surface and the direction of the center line AX1. Here, the first pattern means a pattern corresponding to each color of a color filter, a pattern of an electrode of each pixel, a pattern of a gate / source / drain electrode of a thin film transistor (TFT) formed in each pixel, a semiconductor layer of the TFT And patterns for insulating films. The repetitive pattern area 90 may include another repetitive pattern, for example, a pattern for transferring an alignment mark necessary for manufacturing a substrate, in addition to the first pattern of the pixel portion.

  Buffer region 92 is formed with a second pattern different from the first pattern of repeated pattern region 90. The buffer region 92 of the present embodiment is formed at the same interval in the Y direction as the wiring extending in the circumferential direction (X direction in FIG. 8) of the first pattern, and the width in the Y direction is in the circumferential direction of the first pattern. A wiring pattern thicker than the extended wiring is formed. In addition, the second pattern is formed with one repeating pattern of the wiring extending in the circumferential direction of the first pattern, that is, a wiring pattern longer than the line width of one pixel portion. In the second pattern, the formed thick wiring extends in the circumferential direction of the first pattern of the repetitive pattern region 90 adjacent to one of the circumferential directions disposed at the corresponding position, that is, the same position in the Y-axis direction The wiring and the wiring extending in the circumferential direction of the first pattern of the repetitive pattern area 90 adjacent to the other in the circumferential direction are connected.

  In the cylindrical mask DM, the dimension (distance) in the circumferential direction of the repeated pattern area 90 when expanded as shown in FIG. 8 is ML, and the dimension in the circumferential direction of the buffer area 92 is BL. Further, on the cylindrical mask DM, the dimension (pixel pitch) in the circumferential direction of the pixel portion of the first pattern of the repetitive pattern region 90 is PX. The cylindrical mask DM has a magnification in exposure in the circumferential direction length in which two or more n repetitive pattern areas 90 and n-1 buffer areas 92 sandwiched in the repetitive pattern area 90 are joined. The overlapping length is the overall size of the device pattern to be transferred. That is, assuming that the overall size of the device pattern to be formed is L, L = n · ML + (n−1) · BL. For example, a set of mask pattern areas in which one repetitive pattern area 90 and one buffer area 92 are joined in the circumferential direction of the outer peripheral surface of the cylindrical mask DM is 120 degrees in the circumferential direction of the outer peripheral surface of the cylindrical mask DM In the case of arranging at intervals of three, three repeated pattern areas 90 and three buffer areas 92 are alternately arranged in the circumferential direction on the outer peripheral surface of the cylindrical mask DM.

  Also, the cylindrical mask DM can be manufactured by various methods. For example, it may be drawn and produced on a cylindrical member by a direct drawing device. In addition, the cylindrical mask DM has a first pattern formed on the entire periphery, and a mask having a repeated pattern formed on the entire periphery is manufactured, a pattern of the buffer area 92 is formed on the surface, and other transparent masks are laminated. You may In addition, the cylindrical mask DM has a first pattern formed on the entire periphery, and a mask having a repeated pattern formed on the entire periphery is manufactured, and a part of which is formed a pattern of the buffer area 92 (for example, a sheet You may stick a film etc.). In the present embodiment, at least two repeated pattern areas 90 (dimension ML) and one buffer area 92 (dimension BL) sandwiched by the repeated pattern areas 90 along the circumferential direction of the outer peripheral surface of the cylindrical mask DM. And may be formed so as to fall within the entire circumferential length of the outer peripheral surface of the cylindrical mask DM (diameter of the cylindrical mask DM × pi). Therefore, it means that at least two sets of mask pattern areas in which one repetitive pattern area 90 and one buffer area 92 are joined along the circumferential direction are formed on the outer peripheral surface of the cylindrical mask DM. Do. The number of sets of mask pattern areas in which one repetitive pattern area 90 and one buffer area 92 are joined may be any number. Further, the dimension BL of the buffer area 92 follows the circumferential direction when the edge portion extending in the Y direction of the shielding plate 81 described in FIGS. 6A and 6B rotates in synchronization with the rotational position of the second drum member 22. It is determined by the accuracy and the circumferential size of the half shadow blur when the exposure light (projected light flux) blocked at the edge portion is projected onto the substrate P. As an example, the dimension BL of the buffer area 92 is set to about several mm, preferably about 1 mm, but may be set to the range of 20 · PX ≧ BL 条件 PX from the condition based on the pixel pitch PX (μm).

Furthermore, in order to correspond to several display screen sizes (for example, 36 inches, 42 inches, 46 inches, 50 inches) of the display formed on the substrate P, the substrate P along the longitudinal direction (transport direction) Assuming that the length of the display screen size is LX, the dimension ML + BL in the circumferential direction of the mask pattern area in which one repetitive pattern area 90 and one buffer area 92 are joined, and the length LX is n It is good to set up so that it may become the relation of LX = n. (ML + BL), where is an integer.

  Next, the operation at the time of processing of the processing device 11 will be described. The processing device 11 performs transfer of the pattern onto the substrate P by controlling the drive of each part by the control device 14. The processing apparatus 11 transports the substrate P in the transport direction by the transport apparatus 9 at a predetermined constant speed (for example, in the range of 10 to 50 mm / sec). The processing apparatus 11 detects alignment marks formed in advance on the substrate P wound around the second drum member 22 with the alignment microscopes AMG1 and AMG2. Simultaneously, the rotational angle position of the second drum member 22 is detected by the encoder heads EN3 and EN4, and the substrate is detected based on the detection result of the position of the alignment mark by the alignment microscopes AMG1 and AMG2 and the rotational angle position of the second drum member 22. The position of P on the second drum member 22 is matched. In the present embodiment, the position detection of the alignment mark of the substrate P by the alignment microscopes AMG1 and AMG2 is performed as pre-alignment performed with relatively rough accuracy.

  Further, the processing apparatus 11 detects the position of the formed alignment mark on the substrate P wound around the second drum member 22 with the alignment microscope AMG 3 (see FIG. 1). At the same time, the rotational angle position of the second drum member 22 is detected by the encoder head EN5 (see FIGS. 4 and 5) corresponding to the installation orientation of the alignment microscope AMG3, and the detection result of the position of the alignment mark by the alignment microscope AMG3 The position of the substrate P on the second drum member 22 is matched based on the rotational angle position of the two drum members 22. Thus, the processing apparatus 11 performs alignment with the alignment microscope AMG3. The position detection of the alignment mark by the alignment microscope AMG3 is performed as a fine alignment that precisely aligns the relative positional relationship between the cylindrical mask DM and the substrate P at the time of exposure by the first exposure apparatus EX1.

  The first exposure apparatus EX1 transfers the projection image of the pattern (the repetitive pattern area 90 and the buffer area 92) of the cylindrical mask DM to the substrate P which is wound and transported around the second drum member 22. Specifically, the processing apparatus 11 rotates the cylindrical mask DM together with the first drum member 21 in synchronization with the rotation of the second drum member 22. Further, the processing device 11 causes light to be emitted from the light source device 13 and projects and transfers the pattern of the cylindrical mask DM onto the substrate P. The processing apparatus 11 sequentially performs exposure positions and the like based on the alignment result (relative position error) in the alignment microscope AMG3 and the rotational angle position of the second drum member 22 measured by the encoders EN1 and EN2. Fine tune. As the fine adjustment, for example, as disclosed in International Publication WO 2008/029917, the posture of the mask support portion supporting the cylindrical mask DM is displaced by a plurality of actuators for fine movement, etc., or the cylindrical mask DM is rotated. It can carry out by adjusting the thrust of the direction. Furthermore, in the present embodiment, as shown in FIG. 3, the focus correction optical member 44, the image shift correction optical member 45, the rotation correction mechanism 46, and the magnification correction optical member 47 are provided in each of the projection modules PL1 to PL6. Therefore, these correction optical members and correction mechanisms may be appropriately driven during exposure in accordance with the relative positional error measured at the time of fine alignment by the alignment microscope AMG3.

  The processing apparatus 11 detects the alignment mark on the substrate P supported and conveyed by the second drum member 22 with the alignment microscope AMG 4 and detects the rotation angle position of the second drum member 22 at that time with the encoder head EN 6 (The count value of the counter circuit is latched), and the position of the substrate P on the second drum member 22 is accurately measured.

Subsequently, the second exposure apparatus EX2 (a mask type or maskless type exposure apparatus) irradiates the substrate P supported by the second drum member 22 with exposure light for patterning, and the buffer area 92 of the cylindrical mask DM. A pattern equivalent to a part of the pattern in the repetitive pattern area 90 is transferred to the corresponding area on the substrate P on which is transferred. The second exposure apparatus EX2 adjusts the exposure position on the basis of the alignment result of the alignment microscope AMG4, and switches between execution and stop of exposure (drawing) to transfer the buffer area 92 on the substrate P (dimension In the range of BL), a repetitive pattern is selectively transferred.
From the above, the pattern formed on the buffer area 92 of the outer peripheral surface of the cylindrical mask DM shown in FIG. 8 has a light shielding property over the entire surface so that the pattern exposure of the pixel portion can be correctly performed by the second exposure apparatus EX2. In the area on the substrate P to which the buffer area 92 is transferred by the first exposure apparatus EX1, the pixel part is unexposed as the pattern or only the area of the pixel part is individually light-shielding pattern You may do so.

  In the above operation, each pattern image of the repetitive pattern area 90 and the buffer area 92 continues alternately along the long direction on the substrate P by the rotation of the cylindrical mask DM attached to the first exposure apparatus EX1. Although it continues to be transferred, it is necessary to temporarily interrupt the exposure by the first exposure apparatus EX1 with the length LX of one display screen to be formed on the substrate P. Therefore, when it is determined that the transfer of the pattern image in the first exposure device EX1 is to be stopped, the processing device 11 causes the exposure blocking mechanism 80 to synchronously move the shielding plate 81 and blocks the imaging light beam EL2 by the shielding plate 81. Specifically, the processing device 11 synchronizes the movement of the shielding plate 81 by the driving mechanism 82 with the movement of the cylindrical mask DM, and transfers the shielding plate 81 while the pattern image of the buffer area 92 is transferred. Projection field of view) Move to a position where the imaging light beam EL2 irradiated to each of PA1 to PA6 is blocked. Thereby, the imaging light beam EL2 is not irradiated to the substrate P passing the position facing the first exposure apparatus EX, and thereafter, the transfer of the pattern image of the repetitive pattern area 90 adjacent to the buffer area 92 is blocked. .

  The processing apparatus 11 uses the cylindrical mask DM in the first exposure apparatus EX1 to form patterns (patterns forming display pixels) images corresponding to a plurality of repetitive pattern areas 90 on the substrate P and a pattern corresponding to the buffer area 92 ( The light shielding pattern) image can be transferred alternately. Further, when temporarily interrupting the transfer of the pattern by the first exposure device EX1, the processing device 11 shields the exposure shielding mechanism 80 while the buffer region 92 of the cylindrical mask DM passes through the illumination region IR. By synchronously moving 81 to the position of the shielding plate 81a, it is possible to prevent the exposure of the pattern image corresponding to the repetitive pattern area 90 which can be transferred subsequently. In addition, since the processing apparatus 11 selectively and repeatedly transfers the pattern to the area (dimension BL) to which the pattern image corresponding to the buffer area 92 on the substrate P is transferred by the second exposure apparatus EX2, A necessary pattern can be transferred also to the area corresponding to buffer area 92 on P, and the pattern image for pixels is uniformly transferred at a predetermined repetition pitch over the entire length LX of the display screen size. it can.

  Thus, the processing apparatus 11 can transfer one device pattern in which a pattern corresponding to the n repetitive pattern areas 90 and a pattern corresponding to the n-1 buffer areas 92 are spliced. In addition, since the processing apparatus 11 of this embodiment can form a predetermined pattern also in the buffer area by the first exposure apparatus EX1, the pattern may not be transferred by the second exposure apparatus EX2. In addition, the processing apparatus 11 adjusts the timing to stop the transfer of the pattern using the exposure shielding mechanism 80, thereby n of the n repetitive pattern areas 90 and n-1 buffer areas 92 included in the device pattern. The value of can be adjusted. Therefore, display panels having display screens of various sizes can be easily formed without replacing the cylindrical mask DM for each type.

  As described above, the buffer area 92 is provided in the cylindrical mask DM, and the imaging light beam EL2 is blocked by the shielding plate 81 of the exposure shielding mechanism 80, thereby temporarily stopping the transport of the substrate P and the rotation of the cylindrical mask DM. There is no need to temporarily lower the transport speed or the rotational speed, and it is possible to prevent the end of the pattern transferred to the substrate P from being unclear. This enables accurate processing of the end of the device pattern. That is, the process of connecting the electrodes of the wiring of the end portion of the device pattern and the process of providing the terminals can be reliably performed, and disconnection of the pattern can be suppressed.

  In addition, the cylindrical mask DM has a device pattern, an exposure of a first device pattern (first display panel) having an overall dimension of L1 in the circumferential direction of the outer peripheral surface, and a second device pattern (second Assuming that the dimension in the circumferential direction of the repeated pattern area is ML and the dimension in the circumferential direction of the buffer area is BL so as to be used for any of the exposure of the display panel), ML> BL, and na × ML + It is preferable to set the dimension BL and the dimension ML such that (na-1) × BL = L1 and nb × ML + (nb−1) × BL = L2 are satisfied, and na and nb both become integers. . Thus, only by setting the dimension ML of the repeated pattern area 90 included in one device pattern and the dimension BL of the buffer area 92, that is, only switching the timing of shielding by the exposure shielding mechanism 80, one cylindrical mask DM Thus, it is possible to manufacture a plurality of display panels (displays) and device patterns having different sizes (screen sizes).

  In the cylindrical mask DM of the present embodiment, the dimension BL of the buffer region 92 is set to 1 to 20 times the size (pixel pitch) PX of the pixel portion, and the entire peripheral length of the outer peripheral surface of the cylindrical mask DM is n. It is preferable to set equal to (ML + BL). By setting the dimension BL of the buffer area 92 of the cylindrical mask DM to 1 to 20 times the pixel pitch PX of the pixel section, the dimension in the transport direction of the corresponding area on the substrate P to which the buffer area 92 is transferred is also When the projection magnifications of the projection modules PL1 to PL6 are equal, the maximum is 20 · PX, and the pattern transfer to the corresponding area on the substrate P by the second exposure apparatus EX2 can be suitably performed. The dimension BL of the buffer region 92 on the cylindrical mask DM is preferably an integral multiple of the pixel pitch PX of the pixel portion. Thus, when the second exposure apparatus EX2 transfers a repeated pattern according to the pixel portion to the corresponding area on the substrate P to which the buffer area 92 has been transferred, the buffer area 92 is displayed on the display screen completed as a display panel. It is possible to make the corresponding display part less noticeable. Repeated pattern area 90 and buffer area 92 are formed alternately in the circumferential direction by making the entire circumferential length (diameter x circumscribed ratio) of the outer circumferential surface of cylindrical mask DM equal to n x (ML + BL) Can. Thus, device patterns (display panels) of the same shape can be transferred onto the substrate P by arranging them at regular intervals along the longitudinal direction of the substrate P regardless of the rotational position of the cylindrical mask.

Modification of First Embodiment
Hereinafter, a modification of the processing apparatus 11 will be described with reference to FIGS. 9 to 12. 9 to 12 are schematic views for explaining other examples of the exposure shielding mechanism. In the first embodiment, the shielding plate 81 curved along the second drum member 22 is pivoted between the projection optical system PL (projection modules PL1 to PL6) of the first exposure apparatus EX1 and the second drum member 22. An exposure light shielding mechanism 80 arranged as described above was provided. In the modification shown in FIG. 9, the shielding plate of the exposure light shielding mechanism 80a disposed between the projection optical system PL and the second drum member 22 has a flat plate shape, and the traveling direction of the imaging light beam EL2 from the projection optical system PL It moves in the direction of the orthogonal arrow 84a. As described above, the shielding plate may be a flat plate and may be moved by linear motion.

  In the modification shown in FIG. 10, the shielding plate of the exposure light shielding mechanism 80b is disposed between the projection optical system PL and the cylindrical mask DM. The shielding plate of the exposure light shielding mechanism 80b has a curved surface having a diameter slightly larger than the diameter of the outer peripheral surface of the cylindrical mask DM, and moves in the circumferential direction of the arrow 84b along the rotational direction of the cylindrical mask DM. As described above, the shielding plate may be disposed at a position between the projection optical system PL and the cylindrical mask DM so as to block the image light beam incident on the projection optical system PL from the mask pattern.

  In the modification shown in FIG. 11, the shielding plate of the exposure light shielding mechanism 80c is disposed between the projection optical system PL and the cylindrical mask DM, and the shielding plate of the exposure light shielding mechanism 80c has a flat plate shape similar to FIG. The shielding plate (flat plate) of the exposure light shielding mechanism 80c is moved in the direction of the arrow 84c orthogonal to the traveling direction of the image light beam which is incident on the projection optical system PL from the mask pattern. As described above, the shielding plate may be a flat plate and may be moved by linear motion.

  In the modification shown in FIG. 12, the first field stop 43 in which the shield plate of the exposure light shielding mechanism 80d is disposed on an intermediate image plane P7 in the projection optical system PL (projection modules PL1 to PL6) shown in FIG. Place in the vicinity of The shielding plate of the exposure light shielding mechanism 80d has a flat plate shape parallel to the first field stop 43, and moves in the direction of the arrow 84d orthogonal to the traveling direction of the imaging light beam passing through the intermediate image plane P7. As described above, the shielding plate may be disposed at a position near the first field stop 43 where the imaging light beam can be blocked. Alternatively, the first field stop 43 itself may be provided so as to be capable of reciprocating in the direction of the arrow 84 d, and the imaging light flux may be blocked by a light shielding portion (corresponding to a shielding plate) around the opening of the first field stop 43. good. When the shielding plate of the exposure light shielding mechanism 80d is disposed at or near the intermediate image plane P7, the edge portion of the shielding plate (or the opening of the first field stop 43) may be sharply formed on the substrate P Therefore, the width of the half shadow blur in the substrate P at the edge portion can be reduced, and as a result, the dimension BL of the buffer region 92 of the cylindrical mask DM can be reduced to, for example, at most 10 times the pixel pitch PX. it can.

  Further, in the exposure light shielding mechanism of the above-described embodiment, the shielding plate 81 or the like is a single plate-like member capable of covering all of the plurality of projection areas, but the invention is not limited thereto. The shielding plate may be provided separately for each of the projection modules PL1 to PL6 so that the imaging light flux can be shielded for each projection area. In this case, the plurality of shielding plates of the exposure light shielding device are controlled to move in synchronization with one another. Specifically, shielding plates for shielding the imaging light fluxes directed to each of the odd-numbered projection areas PA1, PA3 and PA5 on the substrate P are simultaneously arranged along the transport direction of the substrate P (the circumferential direction of the drum member 22). A shielding plate which is controlled to move and shields the imaging light flux directed to each of the even-numbered projection areas PA2, PA4 and PA6 on the substrate P is along the transport direction of the substrate P (the circumferential direction of the drum member 22). Control to move simultaneously.

Further, in the above embodiment and the modification, the shield plate of the exposure light shielding mechanism (80, 80a to 80d) is disposed in any of the projection light path from the cylindrical mask DM to the substrate P, but the outer peripheral surface of the cylindrical mask DM You may arrange | position in illumination module IL (refer FIG. 1) which irradiates illumination light to each of upper illumination area | region IR1-IR6. In this case, the illumination light so that the width in the circumferential direction of the cylindrical mask DM of the illumination light irradiated to each of the illumination regions IR1 to IR6 on the cylindrical mask DM gradually narrows in synchronization with the rotation of the cylindrical mask DM Is controlled to be blocked by the edge of the shielding plate.

<Modification of cylindrical mask>
Here, in the cylindrical mask DM in the embodiment and the modification, as an example, the second pattern formed in the buffer area 92 is thicker than the first pattern formed in the repetitive pattern area 90, and the first pattern The wirings are arranged at the same arrangement intervals as the above, but the present invention is not limited to this. Hereinafter, the modification of a cylindrical mask is demonstrated using FIG. FIG. 13 is a partial development view for explaining a cylindrical mask.

  The cylindrical mask DMa shown in FIG. 13 has four repeated pattern areas 90a formed in the circumferential direction, and buffer areas 92a are formed between the repeated pattern areas 90a. That is, in the cylindrical mask DMa shown in FIG. 13, four repetitive pattern areas 90a and four buffer areas 92a are alternately formed one by one. Similar to the above-described repetitive pattern area 90, the repetitive pattern area 90a has a plurality of first patterns corresponding to the pixel portion repeatedly formed. The buffer region 92a includes, as a second pattern, a stripe-shaped light shielding portion extending in a direction orthogonal to the circumferential direction, and a wiring pattern extending in the circumferential direction from the repetitive pattern region 90a through the stripe-shaped light shielding portion. Including.

  In the cylindrical mask DMa, as shown in FIG. 13, since the second pattern of the buffer area 92a is a light shielding part as a whole and does not have a pattern array having the same shape as the first pattern, the substrate P corresponding to the buffer area 92a No pattern is transferred to the upper area. However, the processing apparatus 11 causes a part (buffer area 92 a) of the first pattern (pattern of the pixel portion) in the repetitive pattern area 90 in the area corresponding to the buffer area 92 a on the substrate P by the second exposure apparatus EX2. The pattern on the substrate P transferred in the repetitive pattern area 90a adjacent to the buffer area 92a can be spliced, since the pattern corresponding to the number of It can be adjusted.

  FIG. 14 is an expanded view of the mask pattern formed on the outer peripheral surface of the cylindrical mask DMb. The cylindrical mask DMb of this modification has eight repeated pattern areas 90b and eight buffer areas (main buffer areas ) 92 b and one auxiliary buffer area 94 are formed. Repeated pattern area 90b and buffer area 92b have the same configuration as repeated pattern area 90a and buffer area 92a in FIG. In this modification, a pattern set in which four repeated pattern areas 90b and four buffer areas (main buffer areas) 92b are alternately arranged in the circumferential direction on the outer peripheral surface of the cylindrical mask DMb is a rotation center line of the cylindrical mask DM. Two sets are provided in the direction (direction orthogonal to the circumferential direction). Between the two sets of patterns, stripe-shaped auxiliary buffer regions 94 linearly arranged in the circumferential direction are arranged. In the sub buffer region 94, a third pattern different from the first pattern is formed, but in the present embodiment, a stripe-shaped light shielding portion is formed as in the buffer region 92b. By providing the sub buffer region 94 in the cylindrical mask DMb as shown in FIG. 14, it is possible to change the length of the device pattern (display panel) formed on the substrate P in the direction orthogonal to the substrate transfer direction. In FIG. 14, two sets of pattern sets of four repeated pattern areas 90 b and four buffer areas 92 b are arranged in the direction of rotation center line AX 1 of cylindrical mask DM, but divided into more sets Thus, the individual dimensions of the repetitive pattern area 90b and the buffer area 92b (particularly, the size in the direction of the rotation center line AX1) may be changed under the condition of an integral multiple of the pixel pitch PX.

  Next, with reference to FIGS. 15 to 17, an exposure shielding mechanism suitable for the case of using the cylindrical drum DMb in which the sub buffer area 94 shown in FIG. 14 is formed will be described. FIGS. 15 to 17 are schematic views for explaining other examples of the exposure shielding mechanism. The exposure shielding mechanism 80e shown in FIG. 15 has an exposure shielding unit 85a and two exposure shielding units 86a. The exposure shielding unit 85a has the same configuration as the exposure shielding mechanism 80 shown in FIG. The exposure shielding unit 86a is disposed between the projection optical system PL (each of the projection modules PL1 to PL6) and the cylindrical mask DMb. The exposure light shielding unit 86a has basically the same configuration as the exposure shielding mechanism 80, although the shape and movement direction of the shielding plate are different. In the exposure light shielding unit 86a, the shielding plate has a flat plate shape, and is a direction perpendicular to the traveling direction of the imaging light beam and perpendicular to the rotation direction of the cylindrical mask DMb (extension direction of the rotation center axis AX1) In the direction of the arrow 88a (Y direction). By moving the shielding plate of the exposure shielding unit 86 a in the Y direction, the projection light flux from the pattern set of the repetitive pattern area 90 b on one side in the Y direction and the buffer area 92 b is shielded with the sub buffer area 94 as a boundary. Whether or not is switched. By providing the exposure shielding unit 86a, the size in the Y direction orthogonal to the circumferential direction of the device pattern to be transferred to the substrate P can be changed. Preferably, the exposure shielding unit 86a synchronously moves the edge portion of the shielding plate while the buffer area 92b passes through the illumination area IR (IR1 to IR6). The number of exposure shielding units 86a is not particularly limited, and may be one.

  The exposure shielding mechanism 80f shown in FIG. 16 has an exposure shielding unit 85b and two exposure shielding units 86b. The exposure shielding mechanism 80f exchanges the arrangement positions of the exposure shielding unit 85b and the two exposure shielding units 86b with respect to the exposure shielding mechanism 80e. The exposure shielding unit 85b is disposed between the projection optical system PL and the cylindrical mask DMb. The exposure shielding unit 86 b is disposed between the second drum member 22 and the projection optical system PL. Even if the arrangement of the exposure shielding unit 86b for switching the size in the Y direction of the device pattern to be transferred onto the substrate P is arranged between the second drum member 22 and the cylindrical mask DMb, as in the exposure shielding mechanism 80f. The dimensions in the Y direction of the device pattern to be transferred onto the substrate P can be made different, as in the embodiment of FIG.

  The exposure shielding mechanism 80g shown in FIG. 17 has an exposure shielding unit 85c and two exposure shielding units 86c. The exposure shielding mechanism 80g changes the arrangement of the two exposure shielding units 86c with respect to the exposure shielding mechanism 80f. The shielding plate of the exposure shielding unit 86c is disposed in the vicinity of the first field stop 43 disposed in the intermediate image plane in the projection optical system PL (each of the projection modules PL1 to PL6) as in FIG. There is. As in the exposure shielding mechanism 80g, a shielding plate of the exposure shielding unit 86c for switching the size in the Y direction of the device pattern (display panel) to be transferred onto the substrate P is disposed in the vicinity of the first field stop 43. Also, as in the embodiments of FIGS. 10 and 11 described above, the size in the Y direction of the device pattern to be transferred to the substrate P can be made different.

Second Embodiment
Next, a second embodiment of the processing apparatus according to the present invention will be described with reference to FIG. In this figure, the same components as those of the first embodiment are denoted by the same reference numerals, and the description thereof is omitted. FIG. 18 is a schematic view showing the overall configuration of a processing apparatus (exposure system) according to the second embodiment. The processing apparatus 101 of the second embodiment has a first exposure apparatus EX1, a second exposure apparatus EX2, and a transport mechanism 109. The processing apparatus 101 further includes an alignment microscope AMG1 for pre-alignment, an alignment microscope AMG3 for fine alignment in the first exposure apparatus EX1, and an alignment microscope AMG4 for fine alignment in the second exposure apparatus EX2. The transport mechanism 109 includes a buffer unit 112 of the substrate P disposed between the first exposure apparatus EX1 and the second exposure apparatus EX2, and a buffer unit 114 of the substrate P disposed downstream of the second exposure apparatus EX2. Have. The buffer unit 112 is a mechanism that temporarily accumulates the substrate P over a predetermined length between the first exposure apparatus EX1 and the second exposure apparatus EX2. The buffer unit 114 is a mechanism that temporarily accumulates the substrate P over a predetermined length between the second exposure apparatus EX2 and the downstream processing apparatus.

  By providing the buffer unit 112, the processing apparatus 101 transports the substrate P at the exposure position (projection area) facing the first exposure apparatus EX1 and transports the substrate P at the exposure position facing the second exposure apparatus EX2. The speed and can be set to different values. Thereby, the transport speed of the substrate P when the second exposure device EX2 performs pattern exposure on the region on the substrate P corresponding to the buffer region 92 (92a, 92b) is the transport of the substrate P passing through the first exposure device EX1. Even when it is slower than the speed, pattern exposure can be performed at high speed without reducing the transport speed of the substrate P in the first exposure apparatus EX1 so as to match the slow transport speed of the substrate P in the second exposure apparatus EX2. Also, the circumferential dimension BL of the buffer area 92 (92a, 92b) of the cylindrical mask DM (DMa, DMb) is made sufficiently shorter than the circumferential dimension ML of the repetitive pattern area 90 (90a, 90b). It is Therefore, while the second exposure apparatus EX2 performs pattern exposure on the area corresponding to the buffer area 92 (92a, 92b) on the substrate P, the transfer speed of the substrate P is reduced to make the buffer area 92 (92a, 92b). When the pattern exposure to the corresponding area is completed, until the next area on the substrate P corresponding to the buffer area 92 (92a, 92b) comes, ie, on the substrate P corresponding to the repetitive pattern area 90 (90a, 90b) Of the substrate P can be increased during the passage of the region of. Thus, the length of the substrate P accumulated in the buffer unit 112 can be shortened.

  The processing apparatus 101 includes the buffer 102 between the first exposure apparatus EX1 and the second exposure apparatus EX2 so that the transfer speed of the pattern in the second exposure apparatus EX2 is low even when the transfer speed of the pattern is low. Then, exposure with a cylindrical mask can be performed. Thereby, a pattern can be formed efficiently.

  As described above, in the first embodiment, the second embodiment, and the respective variations thereof, the buffer regions 92 (92 a and 92 b) and the sub buffer regions 94 formed in the cylindrical mask DM are substrates by the second exposure apparatus EX 2. Although the first pattern corresponding to the pixel portion is exposed in the corresponding region on P, the width (dimension BL) of the buffer region 92 (92a, 92b) and the width of the sub buffer region 94 are sufficiently reduced. Depending on the application of the display panel, the additional exposure by the second exposure apparatus EX2 may not be performed. In this case, although the pixel is not formed on the display panel corresponding to the buffer area 92 (92a, 92b) or the sub buffer area 94, it may be used with no problem in a panel for digital signage (electronic advertisement). Also, whether the photosensitive layer (photoresist or the like) applied to the surface of the substrate P is positive or negative, as described above, the buffer area 92 (92a, 92b) or the sub buffer area 94 on the cylindrical mask DM The resist pattern of the additionally exposed portion is repeatedly patterned region 90 (90a, 90b) after the development of the substrate P by the additional exposure by the second exposure apparatus EX2 by making the portion of the light shielding portion (shielding portion). Appear correctly connected with the resist pattern corresponding to.

  Further, in the first embodiment, the second embodiment, and the respective variations thereof, the cylindrical mask DM is formed as a transmission type mask pattern, but for example, International Publication WO2008 / 029917, International Publication WO2014 / 073535. It is good also as a reflection type mask pattern which is indicated by the gazette, and makes an illumination optical system into an epi-illumination system.

<Device manufacturing method>
Next, a device manufacturing method will be described with reference to FIG. FIG. 19 is a flowchart showing the device manufacturing method of the first embodiment. FIG. 19 is a flowchart showing a device manufacturing method using the processing apparatus (exposure system) according to the first embodiment.

  In the device manufacturing method shown in FIG. 19, first, function / performance design of a display panel by self-light emitting elements such as organic EL is performed, and necessary circuit patterns and wiring patterns are designed by CAD (step S201). Next, based on the pattern of each of the various layers designed by CAD or the like, a cylindrical mask DM for the necessary layer is manufactured (step S202). In addition, a supply roll FR1 on which a flexible substrate P (a resin film, a metal foil film, a plastic or the like) to be a base material of the display panel is wound is prepared (step S203). The roll-like substrate P prepared in this step S203 has its surface modified as necessary, a base layer (for example, minute unevenness by imprint method) formed in advance, photosensitivity What laminated the functional film and transparent film | membrane (insulation material) of previously is also good.

  Next, on the substrate P, a backplane layer composed of electrodes and wirings constituting the display panel device, an insulating film, a TFT (thin film semiconductor) and the like is formed, and organic EL etc. A light emitting layer (display pixel portion) is formed by the self light emitting element of the above (step S204). Although this step S204 includes the conventional photolithography process of exposing the photoresist layer using the first exposure apparatuses EX1 and EX2 described in the above embodiments, a photosensitive silane cup is used instead of the photoresist. Pattern exposure of the substrate P coated with the ring material to form a pattern of hydrophilicity and water repellency on the surface, pattern exposure of the photosensitive catalyst layer and pattern of metal film by electroless plating (wiring, electrodes, etc.) And a printing process of drawing a pattern by a conductive ink containing silver nanoparticles or the like.

  Then, the substrate P is diced for each display panel device continuously manufactured on a long substrate P by a roll method, or a protective film (anti-environment barrier layer) or a color filter is formed on the surface of each display panel device. A sheet or the like is attached to assemble a device (step S205). Then, an inspection process is performed to determine whether the display panel device functions properly or satisfies the desired performance and characteristics (step S206). As described above, a display panel (flexible display) can be manufactured.

  In addition, the requirements of the above-mentioned embodiment and modification can be combined suitably. In addition, some components may not be used. In addition, the disclosures of all the published publications, patent publications, and US patents related to the exposure apparatus and the like cited in the above-described embodiments and modifications are incorporated as part of the description of the text as far as the laws and regulations permit.

9 conveyance device 11 processing device 12 mask holding device 13 light source device 14 control device 21 first drum member 22 second drum member 23 guide roller 24 drive roller 25 first detector 26 first drive unit 31 guide member 31 solid light source 33 first 2 Guide member 35 Detector 80 Exposure blocking mechanism 81 Light shielding plate 82 Drive mechanism 82a Support portion 82b Drive portion 84 Arrows AM1, AM2, AM3, AM4 Observation direction AMG1, AMG2, AMG3, AMG4 Alignment microscope DM Cylindrical mask EN1, EN2, EN3 , EN4, EN5, EN6 Encoder head EX1, EX2 Exposure device

Claims (9)

A cylindrical mask for transferring a device pattern for a display device comprising a large number of pixel portions onto a sensitive transfer substrate,
At least a first pattern related to the pixel portion of the device pattern, which is formed along a cylindrical outer peripheral surface of a predetermined radius from a predetermined center line, with respect to each of the circumferential direction of the outer peripheral surface and the direction of the center line A plurality of repetitive pattern areas periodically formed;
A second pattern is formed adjacent to the repetitive pattern area in the circumferential direction of the outer circumferential surface, the second pattern being a part of the circumferential direction of the outer circumferential surface and being in the direction of the center line. And a buffer region,
The size of the device pattern transferred onto the transfer substrate is the size when two or more n of the repetitive pattern area sandwich n-1 of the buffer area and are joined in the circumferential direction of the outer peripheral surface. Cylindrical mask corresponding to the overall size. A cylindrical mask according to claim 1, wherein
The second pattern sets a dimension along the circumferential direction of the outer peripheral surface larger than a dimension of the pixel unit, and is provided in a plurality corresponding to each of the pixel units along the direction of the center line.
Cylindrical mask. A cylindrical mask according to claim 1, wherein
The second pattern is set to a shape that shields substantially the entire buffer area.
Cylindrical mask. It is a cylindrical mask as described in any one of Claims 1-3, Comprising:
As the device pattern, the first device pattern overall dimensions corresponding to the circumferential direction of the outer circumferential surface L1, or to overall dimensions different from the overall size L1 is transferred to the second device pattern of L2 on the transfer substrate ,
The dimension ML of the repetitive pattern area along the circumferential direction of the outer peripheral surface and the dimension BL of the buffer area are set to the relationship of ML> BL, and na and nb are integers,
na × ML + (na−1) × BL = L1 and nb × ML + (nb−1) × BL = L2,
The dimension BL and the dimension ML are set to have a relationship of
Cylindrical mask. The cylindrical mask according to claim 4, wherein
The dimension BL of the buffer region along the circumferential direction of the outer circumferential surface is set to a range of 1 to 20 times the dimension of the pixel portion,
The overall length in the circumferential direction of the outer peripheral surface is set to n × (ML + BL),
Cylindrical mask. The cylindrical mask according to claim 5, wherein
The sub-buffering region is further disposed adjacent to the repetitive pattern region with respect to the direction of the center line and in which a third pattern different from the first pattern is formed along the circumferential direction of the outer peripheral surface.
Cylindrical mask. A mask rotation mechanism for supporting the cylindrical mask according to any one of claims 1 to 6 and rotating around the center line.
A substrate moving mechanism for supporting the substrate to be transferred and moving the substrate to be transferred in a predetermined direction in synchronization with the rotation of the cylindrical mask;
An illumination optical system that illuminates a part of the outer peripheral surface of the cylindrical mask with illumination light extending in a direction parallel to the center line;
A projection optical system for projecting and exposing an image of the repetitive pattern area and the buffer area onto the transfer substrate by inputting light generated from the outer peripheral surface of the cylindrical mask by the irradiation of the illumination light;
During the rotation of the cylindrical mask, according to the timing at which the buffer area is projected onto the transfer substrate by the projection optical system, the irradiation of the illumination light is interrupted so as to stop the projection exposure thereafter. An exposure blocking mechanism,
The mask rotating mechanism, the substrate moving mechanism, and the exposure blocking mechanism are controlled such that n of the repetitive pattern area and n-1 of the buffer area are jointed and transferred on the transfer substrate. A control unit,
An exposure apparatus comprising: The exposure apparatus according to claim 7,
The exposure blocking mechanism includes a movable light shielding plate disposed in an illumination light path of the illumination optical system or a part of a projection light path of the projection optical system, and the control unit is configured to adjust the buffer area of the cylindrical mask. Moving the light shielding plate in accordance with the moving direction of the transfer substrate in accordance with the timing at which the projection optical system projects the light onto the transfer substrate.
Exposure device. An exposure apparatus according to claim 7 or 8, wherein
The transfer target substrate is a flexible substrate which is long in the direction of movement by the substrate movement mechanism,
The substrate moving mechanism has a rotating drum which rotates in synchronization with the rotation of the cylindrical mask while supporting a part of the flexible substrate in a cylindrically curved state in the moving direction.
Exposure device.

Images