JP6530303B2 - 腐食を低減するための化学機械研磨スラリー及びその使用方法 - Google Patents

腐食を低減するための化学機械研磨スラリー及びその使用方法 Download PDF

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JP6530303B2
JP6530303B2 JP2015212522A JP2015212522A JP6530303B2 JP 6530303 B2 JP6530303 B2 JP 6530303B2 JP 2015212522 A JP2015212522 A JP 2015212522A JP 2015212522 A JP2015212522 A JP 2015212522A JP 6530303 B2 JP6530303 B2 JP 6530303B2
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group
slurry
activator
combinations
tungsten
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JP2016108542A (ja
Inventor
ジェイ．リウ ブレイク
ジェイ．リウ ブレイク
ピー．ムレッラ クリシュナ
ピー．ムレッラ クリシュナ
グリーフ マルコム
グリーフ マルコム
シ シャオボー
シ シャオボー
チャンドラカント タンボリ ドンヤネシュ
チャンドラカント タンボリ ドンヤネシュ
マーク　レオナルド　オニール
レオナルド オニール マーク
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バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー
バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/12—Lapping plates for working plane surfaces
    • B24B37/14—Lapping plates for working plane surfaces characterised by the composition or properties of the plate materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C09K3/1445—Composite particles, e.g. coated particles the coating consisting exclusively of metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/38—Alkaline compositions for etching refractory metals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2015212522A 2014-10-31 2015-10-29 腐食を低減するための化学機械研磨スラリー及びその使用方法 Active JP6530303B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201462073636P 2014-10-31 2014-10-31
US62/073,636 2014-10-31
US14/884,104 2015-10-15
US14/884,104 US20160122590A1 (en) 2014-10-31 2015-10-15 Chemical Mechanical Polishing Slurry for Reducing Corrosion and Method of Use Therefor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017207262A Division JP2018016812A (ja) 2014-10-31 2017-10-26 腐食を低減するための化学機械研磨スラリー及びその使用方法

Publications (2)

Publication Number Publication Date
JP2016108542A JP2016108542A (ja) 2016-06-20
JP6530303B2 true JP6530303B2 (ja) 2019-06-12

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JP2015212522A Active JP6530303B2 (ja) 2014-10-31 2015-10-29 腐食を低減するための化学機械研磨スラリー及びその使用方法
JP2017207262A Pending JP2018016812A (ja) 2014-10-31 2017-10-26 腐食を低減するための化学機械研磨スラリー及びその使用方法

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Country Link
US (1) US20160122590A1 (https=)
JP (2) JP6530303B2 (https=)
KR (2) KR101867441B1 (https=)
TW (1) TWI577788B (https=)

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US10570313B2 (en) * 2015-02-12 2020-02-25 Versum Materials Us, Llc Dishing reducing in tungsten chemical mechanical polishing
US10128146B2 (en) 2015-08-20 2018-11-13 Globalwafers Co., Ltd. Semiconductor substrate polishing methods and slurries and methods for manufacturing silicon on insulator structures
CN109715751A (zh) 2016-09-23 2019-05-03 圣戈本陶瓷及塑料股份有限公司 化学机械平坦化浆料及其形成方法
KR102798940B1 (ko) * 2016-12-05 2025-04-25 솔브레인 주식회사 화학적 기계적 연마 슬러리 조성물 및 이를 이용한 반도체 소자의 제조방법
KR102422952B1 (ko) 2017-06-12 2022-07-19 삼성전자주식회사 금속막 연마용 슬러리 조성물 및 이를 이용하는 반도체 장치의 제조 방법
WO2019006618A1 (zh) * 2017-07-03 2019-01-10 深圳市宏昌发科技有限公司 钝化剂、金属镀件表面处理方法和金属工件
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US20190085205A1 (en) * 2017-09-15 2019-03-21 Cabot Microelectronics Corporation NITRIDE INHIBITORS FOR HIGH SELECTIVITY OF TiN-SiN CMP APPLICATIONS
US20190352535A1 (en) * 2018-05-21 2019-11-21 Versum Materials Us, Llc Chemical Mechanical Polishing Tungsten Buffing Slurries
US20190382619A1 (en) * 2018-06-18 2019-12-19 Versum Materials Us, Llc Tungsten Chemical Mechanical Polishing Compositions
US11643599B2 (en) * 2018-07-20 2023-05-09 Versum Materials Us, Llc Tungsten chemical mechanical polishing for reduced oxide erosion
US11286403B2 (en) 2018-07-20 2022-03-29 Dongjin Semichem Co., Ltd Chemical mechanical polishing composition, chemical mechanical polishing slurry and method for polishing substrate
KR102808137B1 (ko) * 2018-07-20 2025-05-16 주식회사 동진쎄미켐 화학적 기계적 연마 조성물, 화학적 기계적 연마 슬러리 및 기판의 연마 방법
US11043396B2 (en) * 2018-07-31 2021-06-22 Taiwan Semiconductor Manufacturing Company, Ltd. Chemical mechanical polish slurry and method of manufacture
KR102770047B1 (ko) * 2019-06-20 2025-02-20 후지필름 가부시키가이샤 연마액, 및, 화학적 기계적 연마 방법
CN114686110A (zh) * 2020-12-30 2022-07-01 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN115212920B (zh) * 2022-07-11 2023-08-15 浙江奥首材料科技有限公司 一种壳聚糖基分散催化剂、包含其的半导体材料抛光液、其制备方法及用途
WO2024052720A1 (en) * 2022-09-08 2024-03-14 Eastern University, Sri Lanka pH STABILIZING COMPOSITION FOR CORROSION PROTECTION IN CONCRETE AND METHOD OF PREPARATION THEREOF
TWI873902B (zh) * 2022-10-11 2025-02-21 美商Ｃｍｃ材料有限責任公司 用於高度摻雜硼之矽膜之化學機械拋光組合物
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Also Published As

Publication number Publication date
KR20180068329A (ko) 2018-06-21
JP2018016812A (ja) 2018-02-01
KR102072230B1 (ko) 2020-01-31
TW201615798A (zh) 2016-05-01
KR101867441B1 (ko) 2018-06-18
KR20160051649A (ko) 2016-05-11
US20160122590A1 (en) 2016-05-05
JP2016108542A (ja) 2016-06-20
TWI577788B (zh) 2017-04-11

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