JP6526811B2 - Ｉｉｉ族窒化物結晶を加工する方法 - Google Patents

Ｉｉｉ族窒化物結晶を加工する方法 Download PDF

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Publication number
JP6526811B2
JP6526811B2 JP2017529046A JP2017529046A JP6526811B2 JP 6526811 B2 JP6526811 B2 JP 6526811B2 JP 2017529046 A JP2017529046 A JP 2017529046A JP 2017529046 A JP2017529046 A JP 2017529046A JP 6526811 B2 JP6526811 B2 JP 6526811B2
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group iii
nitride
crystal
processing
substrate
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Japanese (ja)
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JP2017536325A (ja
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忠朗 橋本
忠朗 橋本
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Seoul Semicondutor Co Ltd
Seoul Semiconductor Co Ltd
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Seoul Semicondutor Co Ltd
Seoul Semiconductor Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
    • C30B7/105—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes using ammonia as solvent, i.e. ammonothermal processes

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2017529046A 2014-12-02 2015-12-02 Ｉｉｉ族窒化物結晶を加工する方法 Active JP6526811B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201462086699P 2014-12-02 2014-12-02
US62/086,699 2014-12-02
PCT/US2015/063528 WO2016090045A1 (en) 2014-12-02 2015-12-02 Group iii nitride crystals, their fabrication method, and method of fabricating bulk group iii nitride crystals in supercritical ammonia

Publications (2)

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JP2017536325A JP2017536325A (ja) 2017-12-07
JP6526811B2 true JP6526811B2 (ja) 2019-06-05

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JP (1) JP6526811B2 (zh)
CN (1) CN107002278B (zh)
WO (1) WO2016090045A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9822465B2 (en) 2006-04-07 2017-11-21 Sixpoint Materials, Inc. Method of fabricating group III nitride with gradually degraded crystal structure
JP7117690B2 (ja) * 2017-09-21 2022-08-15 国立大学法人大阪大学 Ｉｉｉ－ｖ族化合物結晶の製造方法および半導体装置の製造方法
JP6899958B2 (ja) * 2018-03-29 2021-07-07 日本碍子株式会社 １３族元素窒化物層、自立基板、機能素子および１３族元素窒化物層の製造方法
EP4108812A1 (en) 2021-06-24 2022-12-28 Instytut Wysokich Cisnien Polskiej Akademii Nauk A method for reducing a lateral growth of crystals
EP4144893A1 (en) * 2021-09-06 2023-03-08 Instytut Wysokich Cisnien Polskiej Akademii Nauk A method for reducing or eliminating cracks during crystal growing process and a shaped metal piece for use in this method

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5891008A (en) 1995-12-15 1999-04-06 The Procter & Gamble Company Sheet products for use in a pop-up dispenser and method for forming from stretched ribbons
US5890008A (en) 1997-06-25 1999-03-30 Sun Microsystems, Inc. Method for dynamically reconfiguring a processor
JP2000275303A (ja) 1999-03-23 2000-10-06 Mitsubishi Electric Corp バウンダリスキャンテスト方法及びバウンダリスキャンテスト装置
TWI277666B (en) 2001-06-06 2007-04-01 Ammono Sp Zoo Process and apparatus for obtaining bulk mono-crystalline gallium-containing nitride
IL161420A0 (en) 2001-10-26 2004-09-27 Ammono Sp Zoo Substrate for epitaxy
US7098487B2 (en) 2002-12-27 2006-08-29 General Electric Company Gallium nitride crystal and method of making same
US7118813B2 (en) * 2003-11-14 2006-10-10 Cree, Inc. Vicinal gallium nitride substrate for high quality homoepitaxy
WO2007008198A1 (en) 2005-07-08 2007-01-18 The Regents Of The University Of California Method for growing group iii-nitride crystals in supercritical ammonia using an autoclave
EP2004882A2 (en) 2006-04-07 2008-12-24 The Regents of the University of California Growing large surface area gallium nitride crystals
US9202872B2 (en) * 2006-04-07 2015-12-01 Sixpoint Materials, Inc. Method of growing group III nitride crystals
US8236237B2 (en) 2006-07-25 2012-08-07 Fiore Industries, Inc. Method and apparatus for destruction of biological and chemical agents
WO2009149299A1 (en) * 2008-06-04 2009-12-10 Sixpoint Materials Methods for producing improved crystallinty group iii-nitride crystals from initial group iii-nitride seed by ammonothermal growth
JP5197283B2 (ja) * 2008-10-03 2013-05-15 国立大学法人東京農工大学 窒化アルミニウム単結晶基板、積層体、およびこれらの製造方法
CN101962804B (zh) * 2010-10-30 2012-05-02 北京大学 基于外延材料应力控制的GaN厚膜自分离方法
CN103305909B (zh) * 2012-03-14 2016-01-20 东莞市中镓半导体科技有限公司 一种用于GaN生长的复合衬底的制备方法
US10611008B2 (en) 2016-11-20 2020-04-07 Custom Molded Products, Llc Installation tools for a water containing structure, components suitable for use therewith, and systems and methods of use therefor

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Publication number Publication date
CN107002278A (zh) 2017-08-01
JP2017536325A (ja) 2017-12-07
CN107002278B (zh) 2019-07-09
WO2016090045A1 (en) 2016-06-09

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