JP6518307B2 - 金属ナノスプリング及びその製造方法 - Google Patents
金属ナノスプリング及びその製造方法 Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 title claims description 73
- 239000002184 metal Substances 0.000 title claims description 73
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000002243 precursor Substances 0.000 claims description 51
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 33
- 238000009713 electroplating Methods 0.000 claims description 29
- 229960005070 ascorbic acid Drugs 0.000 claims description 22
- 235000010323 ascorbic acid Nutrition 0.000 claims description 22
- 239000011668 ascorbic acid Substances 0.000 claims description 22
- 239000011259 mixed solution Substances 0.000 claims description 21
- 239000000243 solution Substances 0.000 claims description 19
- 239000000203 mixture Substances 0.000 claims description 14
- RBFRVUKIVGOWND-UHFFFAOYSA-L oxygen(2-);vanadium(4+);sulfate Chemical compound [O-2].[V+4].[O-]S([O-])(=O)=O RBFRVUKIVGOWND-UHFFFAOYSA-L 0.000 claims description 12
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 9
- 229910017604 nitric acid Inorganic materials 0.000 claims description 9
- 229910000352 vanadyl sulfate Inorganic materials 0.000 claims description 9
- 238000007747 plating Methods 0.000 claims description 8
- ODUOOVPHYRANRG-UHFFFAOYSA-H O.O.O.O.O.O.O.S(=O)(=O)([O-])[O-].[Co+3].S(=O)(=O)([O-])[O-].S(=O)(=O)([O-])[O-].[Co+3] Chemical compound O.O.O.O.O.O.O.S(=O)(=O)([O-])[O-].[Co+3].S(=O)(=O)([O-])[O-].S(=O)(=O)([O-])[O-].[Co+3] ODUOOVPHYRANRG-UHFFFAOYSA-H 0.000 claims description 7
- SURQXAFEQWPFPV-UHFFFAOYSA-L iron(2+) sulfate heptahydrate Chemical compound O.O.O.O.O.O.O.[Fe+2].[O-]S([O-])(=O)=O SURQXAFEQWPFPV-UHFFFAOYSA-L 0.000 claims description 7
- BAUYGSIQEAFULO-UHFFFAOYSA-L iron(2+) sulfate (anhydrous) Chemical compound [Fe+2].[O-]S([O-])(=O)=O BAUYGSIQEAFULO-UHFFFAOYSA-L 0.000 claims description 3
- 229910000359 iron(II) sulfate Inorganic materials 0.000 claims description 3
- UUUGYDOQQLOJQA-UHFFFAOYSA-L vanadyl sulfate Chemical compound [V+2]=O.[O-]S([O-])(=O)=O UUUGYDOQQLOJQA-UHFFFAOYSA-L 0.000 claims description 2
- KTVIXTQDYHMGHF-UHFFFAOYSA-L cobalt(2+) sulfate Chemical compound [Co+2].[O-]S([O-])(=O)=O KTVIXTQDYHMGHF-UHFFFAOYSA-L 0.000 claims 2
- DKCWBFMZNUOFEM-UHFFFAOYSA-L oxovanadium(2+);sulfate;hydrate Chemical compound O.[V+2]=O.[O-]S([O-])(=O)=O DKCWBFMZNUOFEM-UHFFFAOYSA-L 0.000 claims 1
- 230000005291 magnetic effect Effects 0.000 description 12
- 239000000463 material Substances 0.000 description 9
- 229910052723 transition metal Inorganic materials 0.000 description 7
- 150000003624 transition metals Chemical class 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical group [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 229910003321 CoFe Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910021645 metal ion Inorganic materials 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 239000002086 nanomaterial Substances 0.000 description 3
- 239000002070 nanowire Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000002048 anodisation reaction Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000013507 mapping Methods 0.000 description 2
- 239000002071 nanotube Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 150000002910 rare earth metals Chemical class 0.000 description 2
- 230000002194 synthesizing effect Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- OOMOMODKLPLOKW-UHFFFAOYSA-H cobalt(3+);trisulfate Chemical compound [Co+3].[Co+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O OOMOMODKLPLOKW-UHFFFAOYSA-H 0.000 description 1
- 229910000362 cobalt(III) sulfate Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 150000004688 heptahydrates Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910001004 magnetic alloy Inorganic materials 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000012815 thermoplastic material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 150000003623 transition metal compounds Chemical class 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/003—3D structures, e.g. superposed patterned layers
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/006—Nanostructures, e.g. using aluminium anodic oxidation templates [AAO]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C99/00—Subject matter not provided for in other groups of this subclass
- B81C99/0075—Manufacture of substrate-free structures
- B81C99/0085—Manufacture of substrate-free structures using moulds and master templates, e.g. for hot-embossing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
- B82B1/002—Devices comprising flexible or deformable elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
- B82B3/0009—Forming specific nanostructures
- B82B3/0023—Forming specific nanostructures comprising flexible or deformable elements
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16F—SPRINGS; SHOCK-ABSORBERS; MEANS FOR DAMPING VIBRATION
- F16F1/00—Springs
- F16F1/02—Springs made of steel or other material having low internal friction; Wound, torsion, leaf, cup, ring or the like springs, the material of the spring not being relevant
- F16F1/021—Springs made of steel or other material having low internal friction; Wound, torsion, leaf, cup, ring or the like springs, the material of the spring not being relevant characterised by their composition, e.g. comprising materials providing for particular spring properties
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16F—SPRINGS; SHOCK-ABSORBERS; MEANS FOR DAMPING VIBRATION
- F16F1/00—Springs
- F16F1/02—Springs made of steel or other material having low internal friction; Wound, torsion, leaf, cup, ring or the like springs, the material of the spring not being relevant
- F16F1/04—Wound springs
- F16F1/06—Wound springs with turns lying in cylindrical surfaces
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/045—Anodisation of aluminium or alloys based thereon for forming AAO templates
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/562—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of iron or nickel or cobalt
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16F—SPRINGS; SHOCK-ABSORBERS; MEANS FOR DAMPING VIBRATION
- F16F2224/00—Materials; Material properties
- F16F2224/02—Materials; Material properties solids
- F16F2224/0208—Alloys
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16F—SPRINGS; SHOCK-ABSORBERS; MEANS FOR DAMPING VIBRATION
- F16F2226/00—Manufacturing; Treatments
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- General Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Electrochemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
Description
図4は、本発明の一実施例による電気めっき方法で合成したナノスプリングを透過型顕微鏡で分析したマッピング(mapping)の写真と成分分析である。
112 ナノ気孔
114 作用電極
120 ナノスプリング
Claims (8)
- ナノ気孔を有し、一面に作用電極を有するナノテンプレート(nano template)を準備する段階と、
アスコルビン酸(Ascorbic acid;C6H8O6)、バナジウム(IV)オキサイド・サルフェート(VOSO4・xH2O)及び電気めっきしようとする金属を含む金属前駆体溶液を含む第1金属前駆体混合液を準備する段階と、
前記第1金属前駆体混合液に硝酸(Nitric acid;HNO3)を混合して第2金属前駆体混合液を準備する段階と、
前記第2金属前駆体混合液に前記ナノテンプレートを浸漬し、前記第2金属前駆体混合液に挿入された対電極(counter electrode)と前記作用電極との間に電流を印加して、電気めっき方法で前記ナノ気孔に金属ナノスプリングを電気めっきさせる段階と、
前記金属ナノスプリングが電気めっきされたナノテンプレートで前記作用電極及び前記ナノテンプレートを選択的に除去する段階と、を含む金属ナノスプリングの製造方法。 - 前記金属前駆体溶液はコバルト(III)サルフェート・ヘプタハイドレート(CoSO4・7H2O)及び鉄(II)サルフェート・ヘプタハイドレート(FeSO4・7H2O)のうち少なくとも一つを含むことを特徴とする請求項1に記載の金属ナノスプリングの製造方法。
- 前記第2金属前駆体混合液に含まれる硝酸の濃度は0.01 Mないし10 Mであり、
コバルト(III)サルフェート・ヘプタハイドレート(CoSO4・7H2O)の濃度は40 mMであり、
バナジウム(IV)オキサイド・サルフェート(VOSO4・xH2O)の濃度は20 mMであり、
鉄(II)サルフェート・ヘプタハイドレート(FeSO4・7H2O)の濃度は40 mMであり、
アスコルビン酸(Ascorbic acid;C6H8O6)の濃度は20 mMであることを特徴とする請求項2に記載の金属ナノスプリングの製造方法。 - 前記第2金属前駆体混合液のpHは1.5ないし2.5であることを特徴とする請求項3に記載の金属ナノスプリングの製造方法。
- 前記ナノ気孔の平均直径が5 nmないし500 nmであることを特徴とする請求項1に記載の金属ナノスプリングの製造方法。
- 前記ナノテンプレートを前記第2金属前駆体混合液に浸漬し、
前記第2金属前駆体混合液を収納する電気めっき槽(plating bath)を減圧する段階をさらに含み、
前記電気めっき槽の圧力は100 Torrないし700 Torrであることを特徴とする請求項1に記載の金属ナノスプリングの製造方法。 - 前記アスコルビン酸の濃度は20 mMないし100 mMであることを特徴とする請求項1に記載の金属ナノスプリングの製造方法。
- 電気めっきの際に前記作用電極に流れる電流密度は0.1ないし300 mA/cm2であり、
電気めっき時間は1分ないし48時間であることを特徴とする請求項1に記載の金属ナノスプリングの製造方法。
Applications Claiming Priority (2)
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KR1020170059757A KR101916588B1 (ko) | 2017-05-15 | 2017-05-15 | 금속 나노스프링 및 이의 제조방법 |
KR10-2017-0059757 | 2017-05-15 |
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JP2018193607A JP2018193607A (ja) | 2018-12-06 |
JP6518307B2 true JP6518307B2 (ja) | 2019-05-22 |
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US (1) | US10683580B2 (ja) |
JP (1) | JP6518307B2 (ja) |
KR (1) | KR101916588B1 (ja) |
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EP3959519A1 (en) * | 2019-04-25 | 2022-03-02 | F. Hoffmann-La Roche AG | Systems and methods for inserting a nanopore in a membrane using osmotic imbalance |
EP3839644A1 (fr) * | 2019-12-20 | 2021-06-23 | Nivarox-FAR S.A. | Composant horloger flexible, notamment pour mecanisme oscillateur, et mouvement d'horlogerie comportant un tel composant |
EP3839649A1 (fr) * | 2019-12-20 | 2021-06-23 | Nivarox-FAR S.A. | Composant horloger rigide pour mecanisme oscillateur ou pour mecanisme d'echappement et mouvement d'horlogerie comportant un tel composant |
EP3839643B1 (fr) * | 2019-12-20 | 2024-02-21 | The Swatch Group Research and Development Ltd | Composant horloger flexible et mouvement d'horlogerie comportant un tel composant |
KR102425508B1 (ko) | 2020-10-13 | 2022-07-27 | 고려대학교 산학협력단 | 대식세포의 거동 조절용 나노헬릭스-기판 복합체, 이의 제조방법, 및 이를 이용한 대식세포의 부착 및 분극화 조절 방법 |
KR102425509B1 (ko) * | 2020-10-13 | 2022-07-27 | 고려대학교 산학협력단 | 줄기세포의 거동 조절용 나노코일-기판 복합체, 이의 제조방법 및 이를 이용한 줄기세포의 부착 및 분화 조절 방법 |
EP3984946A1 (en) | 2020-10-13 | 2022-04-20 | Korea University Research and Business Foundation | Nanohelix-substrate complex for controlling behavior of regenerative cells, preparing method thereof, and method of contorlling behavior of regenerative cells by using the same |
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US103003A (en) * | 1870-05-10 | Improvement in flouring-mills | ||
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US8405996B2 (en) * | 2009-06-30 | 2013-03-26 | General Electric Company | Article including thermal interface element and method of preparation |
TWI624567B (zh) | 2012-12-11 | 2018-05-21 | 諾發系統有限公司 | 真空電鍍槽 |
JPWO2014109014A1 (ja) | 2013-01-09 | 2017-01-19 | 株式会社日立製作所 | 半導体装置およびその製造方法 |
US10132699B1 (en) * | 2014-10-06 | 2018-11-20 | National Technology & Engineering Solutions Of Sandia, Llc | Electrodeposition processes for magnetostrictive resonators |
KR101711888B1 (ko) * | 2015-01-16 | 2017-03-03 | 고려대학교 산학협력단 | 금속 나노튜브 및 그 제조방법 |
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