JP6514993B2 - 時計部品の製造方法 - Google Patents
時計部品の製造方法 Download PDFInfo
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- JP6514993B2 JP6514993B2 JP2015166040A JP2015166040A JP6514993B2 JP 6514993 B2 JP6514993 B2 JP 6514993B2 JP 2015166040 A JP2015166040 A JP 2015166040A JP 2015166040 A JP2015166040 A JP 2015166040A JP 6514993 B2 JP6514993 B2 JP 6514993B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 102
- 239000000758 substrate Substances 0.000 claims description 76
- 238000005530 etching Methods 0.000 claims description 65
- 238000000034 method Methods 0.000 claims description 41
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 230000000149 penetrating effect Effects 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 201
- 239000010408 film Substances 0.000 description 43
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 238000000059 patterning Methods 0.000 description 11
- 238000001020 plasma etching Methods 0.000 description 11
- 238000001039 wet etching Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 210000003423 ankle Anatomy 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 7
- 239000011241 protective layer Substances 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910018503 SF6 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000005513 bias potential Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 210000000078 claw Anatomy 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 2
- 229960000909 sulfur hexafluoride Drugs 0.000 description 2
- YDCWBDWPPAHSOR-UHFFFAOYSA-N C1CCC1.F.F.F.F.F.F.F.F Chemical compound C1CCC1.F.F.F.F.F.F.F.F YDCWBDWPPAHSOR-UHFFFAOYSA-N 0.000 description 1
- 239000004341 Octafluorocyclobutane Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000708 deep reactive-ion etching Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 description 1
- 235000019407 octafluorocyclobutane Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015166040A JP6514993B2 (ja) | 2015-08-25 | 2015-08-25 | 時計部品の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015166040A JP6514993B2 (ja) | 2015-08-25 | 2015-08-25 | 時計部品の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017044533A JP2017044533A (ja) | 2017-03-02 |
| JP2017044533A5 JP2017044533A5 (enrdf_load_stackoverflow) | 2018-08-30 |
| JP6514993B2 true JP6514993B2 (ja) | 2019-05-15 |
Family
ID=58209784
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015166040A Active JP6514993B2 (ja) | 2015-08-25 | 2015-08-25 | 時計部品の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6514993B2 (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021053501A1 (fr) | 2019-09-16 | 2021-03-25 | Richemont International Sa | Procédé de fabrication d'une pluralité de résonateurs sur une plaquette |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3543796A1 (fr) | 2018-03-21 | 2019-09-25 | Nivarox-FAR S.A. | Procede de fabrication d'un spiral en silicium |
| JP7052625B2 (ja) * | 2018-08-02 | 2022-04-12 | セイコーエプソン株式会社 | 時計用部品、ムーブメント、時計および時計用部品の製造方法 |
| JP6908064B2 (ja) * | 2019-03-14 | 2021-07-21 | セイコーエプソン株式会社 | 時計用部品、時計用ムーブメントおよび時計 |
| CH719412B1 (fr) * | 2022-02-11 | 2025-07-31 | Sigatec Sa | Procédé de fabrication d'une pièce en silicium |
| CH720935A1 (fr) * | 2023-07-11 | 2025-01-15 | Richemont Int Sa | Procédé de fabrication de composants horlogers en silicium sur une plaquette SOI |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3928364B2 (ja) * | 2001-03-21 | 2007-06-13 | セイコーエプソン株式会社 | 時計 |
| JP5176387B2 (ja) * | 2007-05-18 | 2013-04-03 | 大日本印刷株式会社 | メンブレン構造体の製造方法 |
| DE102008061182A1 (de) * | 2008-12-04 | 2010-06-10 | Konrad Damasko | Verfahren zum Herstellen eines Mikrobauteils |
| DE212014000091U1 (de) * | 2013-03-22 | 2015-10-23 | Omega Sa | Koaxialer einteiliger Hemmungsanker |
-
2015
- 2015-08-25 JP JP2015166040A patent/JP6514993B2/ja active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021053501A1 (fr) | 2019-09-16 | 2021-03-25 | Richemont International Sa | Procédé de fabrication d'une pluralité de résonateurs sur une plaquette |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2017044533A (ja) | 2017-03-02 |
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