JP6510031B2 - 増幅器 - Google Patents
増幅器 Download PDFInfo
- Publication number
- JP6510031B2 JP6510031B2 JP2017505796A JP2017505796A JP6510031B2 JP 6510031 B2 JP6510031 B2 JP 6510031B2 JP 2017505796 A JP2017505796 A JP 2017505796A JP 2017505796 A JP2017505796 A JP 2017505796A JP 6510031 B2 JP6510031 B2 JP 6510031B2
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- JP
- Japan
- Prior art keywords
- power supply
- amplifier circuit
- bypass
- power
- modulator
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
- H03F1/0216—Continuous control
- H03F1/0222—Continuous control by using a signal derived from the input signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/083—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers
- H03F1/086—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers with FET's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/204—A hybrid coupler being used at the output of an amplifier circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/207—A hybrid coupler being used as power measuring circuit at the output of an amplifier circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/504—Indexing scheme relating to amplifiers the supply voltage or current being continuously controlled by a controlling signal, e.g. the controlling signal of a transistor implemented as variable resistor in a supply path for, an IC-block showed amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/555—A voltage generating circuit being realised for biasing different circuit elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21139—An impedance adaptation circuit being added at the output of a power amplifier stage
Description
以下に、本願出願の当初の特許請求の範囲に記載された発明を付記する。
〔1〕
無線周波数信号を増幅するように構成される増幅デバイス、前記増幅デバイスは、出力ダイナミックレンジを有する、と、
前記増幅デバイスの出力が前記出力ダイナミックレンジの第1の領域内であるときに前記増幅デバイスに供給される電源電圧を変調するように構成される電源変調器と、
前記増幅デバイスの出力に結合された同調可能整合ネットワークと、
前記増幅デバイスの前記出力が前記出力ダイナミックレンジの第2の領域内であるとき、前記同調可能整合ネットワークを制御し、それによって、前記増幅デバイスの前記出力が加えられる前記負荷を変調するように構成される負荷制御器と
を備える、増幅器回路。
〔2〕
前記電源変調器は、電荷ポンプ回路を備える、〔1〕に記載の増幅器回路。
〔3〕
前記第1の領域と前記第2の領域とは、重複しない、〔1〕に記載の増幅器回路。
〔4〕
前記第1の領域は、前記第2の領域よりも高い出力電力を備える、〔3〕に記載の増幅器回路。
〔5〕
前記電源変調器を選択的にバイパスするように構成される電源変調器バイパス回路をさらに備える、〔1〕に記載の増幅器回路。
〔6〕
前記電源変調器バイパス回路は、前記無線周波数信号の前記ピーク対平均電力比が閾値より下であるときに前記電源変調器をバイパスするように構成される、〔5〕に記載の増幅器回路。
〔7〕
前記電源変調器バイパス回路は、前記電源変調器が動作できないときに前記電源変調器をバイパスするように構成される、〔5〕に記載の増幅器回路。
〔8〕
前記負荷制御器を選択的にバイパスするように構成される負荷制御器バイパス回路をさらに備える、〔1〕に記載の増幅器回路。
〔9〕
前記負荷制御器バイパス回路は、前記無線周波数信号の前記ピーク対平均電力比が閾値より下であるときに前記負荷制御器をバイパスするように構成される、〔8〕に記載の増幅器回路。
〔10〕
前記負荷制御器バイパス回路は、前記負荷制御器が動作できないときに前記負荷制御器をバイパスするように構成される、〔8〕に記載の増幅器回路。
Claims (9)
- 無線周波数信号を増幅するように構成される増幅デバイス、前記増幅デバイスは、出力ダイナミックレンジを有する、と、
前記増幅デバイスの出力が前記出力ダイナミックレンジの第1の領域内であるときに前記増幅デバイスに供給される電源電圧を変調するように構成される電源変調器と、
前記増幅デバイスの出力に結合された同調可能整合ネットワークと、
前記増幅デバイスの前記出力が前記出力ダイナミックレンジの第2の領域内であるとき、前記同調可能整合ネットワークを制御し、それによって、前記増幅デバイスの前記出力が加えられる負荷を変調するように構成される負荷制御器とを備え、
ここにおいて、前記第1の領域は、前記第2の領域よりも高い出力電力を備える、増幅器回路。 - 前記電源変調器は、電荷ポンプ回路を備える、請求項1に記載の増幅器回路。
- 前記第1の領域と前記第2の領域とは、重複しない、請求項1に記載の増幅器回路。
- 前記電源変調器を選択的にバイパスするように構成される電源変調器バイパス回路をさらに備える、請求項1に記載の増幅器回路。
- 前記電源変調器バイパス回路は、前記無線周波数信号のピーク対平均電力比が閾値より下であるときに前記電源変調器をバイパスするように構成される、請求項4に記載の増幅器回路。
- 前記電源変調器バイパス回路は、前記電源変調器が動作できないときに前記電源変調器をバイパスするように構成される、請求項4に記載の増幅器回路。
- 前記負荷制御器を選択的にバイパスするように構成される負荷制御器バイパス回路をさらに備える、請求項1に記載の増幅器回路。
- 前記負荷制御器バイパス回路は、前記無線周波数信号のピーク対平均電力比が閾値より下であるときに前記負荷制御器をバイパスするように構成される、請求項7に記載の増幅器回路。
- 前記負荷制御器バイパス回路は、前記負荷制御器が動作できないときに前記負荷制御器をバイパスするように構成される、請求項7に記載の増幅器回路。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/GB2015/051536 WO2016189263A1 (en) | 2015-05-27 | 2015-05-27 | Amplifier |
Publications (2)
Publication Number | Publication Date |
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JP2017526270A JP2017526270A (ja) | 2017-09-07 |
JP6510031B2 true JP6510031B2 (ja) | 2019-05-08 |
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ID=53276186
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017505796A Active JP6510031B2 (ja) | 2015-05-27 | 2015-05-27 | 増幅器 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10277169B2 (ja) |
JP (1) | JP6510031B2 (ja) |
WO (1) | WO2016189263A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110311631B (zh) * | 2019-05-29 | 2023-06-27 | 上海联影医疗科技股份有限公司 | 射频功率放大器、射频功率放大方法以及磁共振成像系统 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3424959A (en) * | 1964-09-24 | 1969-01-28 | Jordan Controls Inc | Split phase induction motor solid state position control with braking at balance |
US4314441A (en) * | 1977-07-22 | 1982-02-09 | Westinghouse Electric Corp. | Gas turbine power plant control apparatus including an ambient temperature responsive control system |
US4414540A (en) * | 1981-07-06 | 1983-11-08 | General Electric Company | Automatic redundant transducer selector for a steam turbine control system |
US7202734B1 (en) | 1999-07-06 | 2007-04-10 | Frederick Herbert Raab | Electronically tuned power amplifier |
US7336514B2 (en) * | 2001-08-10 | 2008-02-26 | Micropulse Technologies | Electrical power conservation apparatus and method |
EP2561611B1 (en) * | 2010-04-19 | 2015-01-14 | RF Micro Devices, Inc. | Pseudo-envelope following power management system |
US9247496B2 (en) * | 2011-05-05 | 2016-01-26 | Rf Micro Devices, Inc. | Power loop control based envelope tracking |
WO2013174411A1 (en) | 2012-05-21 | 2013-11-28 | Telefonaktiebolaget L M Ericsson (Publ) | High efficiency wideband dynamic load modulation power amplifier architecture |
JP2014183463A (ja) | 2013-03-19 | 2014-09-29 | Fujitsu Ltd | 電力増幅器の制御装置及び制御方法 |
US10027288B2 (en) | 2013-10-28 | 2018-07-17 | Kabushiki Kaisha Toshiba | Amplifier |
US9520907B2 (en) * | 2014-02-16 | 2016-12-13 | Mediatek Inc. | Methods and apparatus for envelope tracking system |
WO2015145097A1 (en) | 2014-03-27 | 2015-10-01 | Kabushiki Kaisha Toshiba | Amplifier circuitry for envelope modulators, envelope modulators incorporating said amplifier circuitry and method of modulating a signal envelope |
-
2015
- 2015-05-27 US US15/506,264 patent/US10277169B2/en active Active
- 2015-05-27 WO PCT/GB2015/051536 patent/WO2016189263A1/en active Application Filing
- 2015-05-27 JP JP2017505796A patent/JP6510031B2/ja active Active
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Publication number | Publication date |
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US10277169B2 (en) | 2019-04-30 |
WO2016189263A1 (en) | 2016-12-01 |
US20180123521A1 (en) | 2018-05-03 |
JP2017526270A (ja) | 2017-09-07 |
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