JP6509231B2 - 強磁場用のシングルチップ基準ブリッジ磁気センサ - Google Patents
強磁場用のシングルチップ基準ブリッジ磁気センサ Download PDFInfo
- Publication number
- JP6509231B2 JP6509231B2 JP2016542947A JP2016542947A JP6509231B2 JP 6509231 B2 JP6509231 B2 JP 6509231B2 JP 2016542947 A JP2016542947 A JP 2016542947A JP 2016542947 A JP2016542947 A JP 2016542947A JP 6509231 B2 JP6509231 B2 JP 6509231B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic field
- field sensor
- element string
- chip
- sensor according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310719255.9 | 2013-12-24 | ||
| CN201310719255.9A CN103645449B (zh) | 2013-12-24 | 2013-12-24 | 一种用于高强度磁场的单芯片参考桥式磁传感器 |
| PCT/CN2014/094838 WO2015096744A1 (zh) | 2013-12-24 | 2014-12-24 | 一种用于高强度磁场的单芯片参考桥式磁传感器 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017502298A JP2017502298A (ja) | 2017-01-19 |
| JP2017502298A5 JP2017502298A5 (enExample) | 2018-12-06 |
| JP6509231B2 true JP6509231B2 (ja) | 2019-05-08 |
Family
ID=50250699
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016542947A Active JP6509231B2 (ja) | 2013-12-24 | 2014-12-24 | 強磁場用のシングルチップ基準ブリッジ磁気センサ |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10024930B2 (enExample) |
| EP (1) | EP3088908B1 (enExample) |
| JP (1) | JP6509231B2 (enExample) |
| CN (1) | CN103645449B (enExample) |
| WO (1) | WO2015096744A1 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103645449B (zh) * | 2013-12-24 | 2015-11-25 | 江苏多维科技有限公司 | 一种用于高强度磁场的单芯片参考桥式磁传感器 |
| CN103954920B (zh) * | 2014-04-17 | 2016-09-14 | 江苏多维科技有限公司 | 一种单芯片三轴线性磁传感器及其制备方法 |
| CN104301851B (zh) | 2014-07-14 | 2018-01-26 | 江苏多维科技有限公司 | Tmr近场磁通信系统 |
| CN104280700B (zh) * | 2014-09-28 | 2017-09-08 | 江苏多维科技有限公司 | 一种单芯片差分自由层推挽式磁场传感器电桥及制备方法 |
| CN104698409B (zh) * | 2015-02-04 | 2017-11-10 | 江苏多维科技有限公司 | 一种单芯片具有校准线圈/重置线圈的高强度磁场x轴线性磁电阻传感器 |
| CN104776794B (zh) * | 2015-04-16 | 2017-11-10 | 江苏多维科技有限公司 | 一种单封装的高强度磁场磁电阻角度传感器 |
| CN105259518A (zh) | 2015-11-03 | 2016-01-20 | 江苏多维科技有限公司 | 一种高灵敏度单芯片推挽式tmr磁场传感器 |
| CN108072850B (zh) | 2016-11-09 | 2020-06-12 | 爱盛科技股份有限公司 | 磁场感测装置 |
| CN107037382B (zh) * | 2017-04-05 | 2023-05-30 | 江苏多维科技有限公司 | 一种预调制磁电阻传感器 |
| JP6996478B2 (ja) | 2018-11-16 | 2022-02-04 | Tdk株式会社 | 磁気センサ及び位置検出装置 |
| JP7006670B2 (ja) * | 2019-10-24 | 2022-01-24 | Tdk株式会社 | 磁気センサ |
| US12146928B2 (en) | 2021-04-12 | 2024-11-19 | Analog Devices International Unlimited Company | Magnetic field sensor with overcurrent detection |
| US12078695B2 (en) | 2021-04-12 | 2024-09-03 | Analog Devices International Unlimited Company | Magnetic field sensor with overcurrent detection |
| CN115236568B (zh) | 2022-09-23 | 2023-01-20 | 南方电网数字电网研究院有限公司 | 基于磁通调节器的宽量程垂直敏感磁传感器及其制备方法 |
| CN115963437B (zh) * | 2022-12-21 | 2023-10-20 | 南方电网数字电网研究院有限公司 | 多量程磁传感器、磁场测量方法及导体制备方法 |
| CN115932674B (zh) * | 2022-12-29 | 2025-05-30 | 上海航天控制技术研究所 | 一种强磁环境下的磁强计使用方法 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3887944A (en) * | 1973-06-29 | 1975-06-03 | Ibm | Method for eliminating part of magnetic crosstalk in magnetoresistive sensors |
| JP2663460B2 (ja) * | 1987-10-09 | 1997-10-15 | 株式会社デンソー | 磁気方位センサ |
| US5217010A (en) | 1991-05-28 | 1993-06-08 | The Johns Hopkins University | Ecg amplifier and cardiac pacemaker for use during magnetic resonance imaging |
| US6185078B1 (en) * | 1998-08-21 | 2001-02-06 | International Business Machines Corporation | Spin valve read head with antiferromagnetic oxide film as longitudinal bias layer and portion of first read gap |
| US6771472B1 (en) * | 2001-12-07 | 2004-08-03 | Seagate Technology Llc | Structure to achieve thermally stable high sensitivity and linear range in bridge GMR sensor using SAF magnetic alignments |
| JP4977378B2 (ja) * | 2006-02-23 | 2012-07-18 | 山梨日本電気株式会社 | 磁気センサ、回転検出装置及び位置検出装置 |
| WO2007119569A1 (ja) * | 2006-04-13 | 2007-10-25 | Asahi Kasei Emd Corporation | 磁気センサ及びその製造方法 |
| US7639005B2 (en) * | 2007-06-15 | 2009-12-29 | Advanced Microsensors, Inc. | Giant magnetoresistive resistor and sensor apparatus and method |
| US7795862B2 (en) * | 2007-10-22 | 2010-09-14 | Allegro Microsystems, Inc. | Matching of GMR sensors in a bridge |
| JP5500785B2 (ja) * | 2008-05-14 | 2014-05-21 | 新科實業有限公司 | 磁気センサ |
| WO2010143718A1 (ja) * | 2009-06-12 | 2010-12-16 | アルプス・グリーンデバイス株式会社 | 磁気平衡式電流センサ |
| CN102298125B (zh) * | 2011-03-03 | 2013-01-23 | 江苏多维科技有限公司 | 推挽桥式磁电阻传感器 |
| JP5597305B2 (ja) * | 2011-03-07 | 2014-10-01 | アルプス電気株式会社 | 電流センサ |
| CN102621504B (zh) * | 2011-04-21 | 2013-09-04 | 江苏多维科技有限公司 | 单片参考全桥磁场传感器 |
| CN102323554A (zh) | 2011-05-17 | 2012-01-18 | 杭州电子科技大学 | 集成线圈偏置的巨磁电阻磁敏传感器 |
| JP2013053903A (ja) | 2011-09-02 | 2013-03-21 | Alps Green Devices Co Ltd | 電流センサ |
| CN102565727B (zh) * | 2012-02-20 | 2016-01-20 | 江苏多维科技有限公司 | 用于测量磁场的磁电阻传感器 |
| JP2013210335A (ja) * | 2012-03-30 | 2013-10-10 | Alps Electric Co Ltd | 磁気センサ |
| CN103267955B (zh) * | 2013-05-28 | 2016-07-27 | 江苏多维科技有限公司 | 单芯片桥式磁场传感器 |
| CN203337808U (zh) | 2013-05-28 | 2013-12-11 | 江苏多维科技有限公司 | 单芯片桥式磁场传感器 |
| CN203587786U (zh) | 2013-10-21 | 2014-05-07 | 江苏多维科技有限公司 | 一种用于高强度磁场的推挽桥式磁传感器 |
| CN103592608B (zh) | 2013-10-21 | 2015-12-23 | 江苏多维科技有限公司 | 一种用于高强度磁场的推挽桥式磁传感器 |
| CN203658561U (zh) * | 2013-12-24 | 2014-06-18 | 江苏多维科技有限公司 | 一种用于高强度磁场的单芯片参考桥式磁传感器 |
| CN103630855B (zh) * | 2013-12-24 | 2016-04-13 | 江苏多维科技有限公司 | 一种高灵敏度推挽桥式磁传感器 |
| CN103645449B (zh) * | 2013-12-24 | 2015-11-25 | 江苏多维科技有限公司 | 一种用于高强度磁场的单芯片参考桥式磁传感器 |
-
2013
- 2013-12-24 CN CN201310719255.9A patent/CN103645449B/zh active Active
-
2014
- 2014-12-24 JP JP2016542947A patent/JP6509231B2/ja active Active
- 2014-12-24 WO PCT/CN2014/094838 patent/WO2015096744A1/zh not_active Ceased
- 2014-12-24 US US15/108,162 patent/US10024930B2/en active Active
- 2014-12-24 EP EP14874846.0A patent/EP3088908B1/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN103645449B (zh) | 2015-11-25 |
| US20160327616A1 (en) | 2016-11-10 |
| CN103645449A (zh) | 2014-03-19 |
| EP3088908B1 (en) | 2021-10-20 |
| EP3088908A4 (en) | 2017-09-20 |
| EP3088908A1 (en) | 2016-11-02 |
| US10024930B2 (en) | 2018-07-17 |
| WO2015096744A1 (zh) | 2015-07-02 |
| JP2017502298A (ja) | 2017-01-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6509231B2 (ja) | 強磁場用のシングルチップ基準ブリッジ磁気センサ | |
| JP2017502298A5 (enExample) | ||
| JP6461946B2 (ja) | 高強度磁界用のプッシュプルブリッジ型磁気センサ | |
| JP6474822B2 (ja) | 高感度プッシュプルブリッジ磁気センサ | |
| CN103267955B (zh) | 单芯片桥式磁场传感器 | |
| CN102590768B (zh) | 一种磁电阻磁场梯度传感器 | |
| JP6193212B2 (ja) | シングルチップ2軸ブリッジ型磁界センサ | |
| CN202421483U (zh) | 单一芯片推挽桥式磁场传感器 | |
| JP6420665B2 (ja) | 磁場を測定する磁気抵抗センサ | |
| CN103412269B (zh) | 单芯片推挽桥式磁场传感器 | |
| CN102435963B (zh) | 单片双轴桥式磁场传感器 | |
| US20140327437A1 (en) | Current sensor | |
| CN202210144U (zh) | 单片参考全桥磁场传感器 | |
| JP2014512003A (ja) | シングルチッププッシュプルブリッジ型磁界センサ | |
| CN203658561U (zh) | 一种用于高强度磁场的单芯片参考桥式磁传感器 | |
| CN203337808U (zh) | 单芯片桥式磁场传感器 | |
| CN203587786U (zh) | 一种用于高强度磁场的推挽桥式磁传感器 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20160817 |
|
| RD01 | Notification of change of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7426 Effective date: 20160816 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170911 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180629 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180801 |
|
| A524 | Written submission of copy of amendment under article 19 pct |
Free format text: JAPANESE INTERMEDIATE CODE: A524 Effective date: 20181029 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190329 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190402 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6509231 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |