CN103645449B - 一种用于高强度磁场的单芯片参考桥式磁传感器 - Google Patents

一种用于高强度磁场的单芯片参考桥式磁传感器 Download PDF

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Publication number
CN103645449B
CN103645449B CN201310719255.9A CN201310719255A CN103645449B CN 103645449 B CN103645449 B CN 103645449B CN 201310719255 A CN201310719255 A CN 201310719255A CN 103645449 B CN103645449 B CN 103645449B
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magnetic sensor
type magnetic
bridge type
bridge
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CN103645449A (zh
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詹姆斯·G·迪克
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MultiDimension Technology Co Ltd
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MultiDimension Technology Co Ltd
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Priority to CN201310719255.9A priority Critical patent/CN103645449B/zh
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Priority to JP2016542947A priority patent/JP6509231B2/ja
Priority to EP14874846.0A priority patent/EP3088908B1/en
Priority to US15/108,162 priority patent/US10024930B2/en
Priority to PCT/CN2014/094838 priority patent/WO2015096744A1/zh
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)
CN201310719255.9A 2013-12-24 2013-12-24 一种用于高强度磁场的单芯片参考桥式磁传感器 Active CN103645449B (zh)

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Application Number Priority Date Filing Date Title
CN201310719255.9A CN103645449B (zh) 2013-12-24 2013-12-24 一种用于高强度磁场的单芯片参考桥式磁传感器
JP2016542947A JP6509231B2 (ja) 2013-12-24 2014-12-24 強磁場用のシングルチップ基準ブリッジ磁気センサ
EP14874846.0A EP3088908B1 (en) 2013-12-24 2014-12-24 Single chip reference bridge type magnetic sensor for high-intensity magnetic field
US15/108,162 US10024930B2 (en) 2013-12-24 2014-12-24 Single chip referenced bridge magnetic sensor for high-intensity magnetic field
PCT/CN2014/094838 WO2015096744A1 (zh) 2013-12-24 2014-12-24 一种用于高强度磁场的单芯片参考桥式磁传感器

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CN201310719255.9A CN103645449B (zh) 2013-12-24 2013-12-24 一种用于高强度磁场的单芯片参考桥式磁传感器

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CN103645449A CN103645449A (zh) 2014-03-19
CN103645449B true CN103645449B (zh) 2015-11-25

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US (1) US10024930B2 (enExample)
EP (1) EP3088908B1 (enExample)
JP (1) JP6509231B2 (enExample)
CN (1) CN103645449B (enExample)
WO (1) WO2015096744A1 (enExample)

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CN103645449B (zh) * 2013-12-24 2015-11-25 江苏多维科技有限公司 一种用于高强度磁场的单芯片参考桥式磁传感器
CN103954920B (zh) * 2014-04-17 2016-09-14 江苏多维科技有限公司 一种单芯片三轴线性磁传感器及其制备方法
CN104301851B (zh) 2014-07-14 2018-01-26 江苏多维科技有限公司 Tmr近场磁通信系统
CN104280700B (zh) * 2014-09-28 2017-09-08 江苏多维科技有限公司 一种单芯片差分自由层推挽式磁场传感器电桥及制备方法
CN104698409B (zh) * 2015-02-04 2017-11-10 江苏多维科技有限公司 一种单芯片具有校准线圈/重置线圈的高强度磁场x轴线性磁电阻传感器
CN104776794B (zh) * 2015-04-16 2017-11-10 江苏多维科技有限公司 一种单封装的高强度磁场磁电阻角度传感器
CN105259518A (zh) 2015-11-03 2016-01-20 江苏多维科技有限公司 一种高灵敏度单芯片推挽式tmr磁场传感器
CN108072850B (zh) 2016-11-09 2020-06-12 爱盛科技股份有限公司 磁场感测装置
CN107037382B (zh) * 2017-04-05 2023-05-30 江苏多维科技有限公司 一种预调制磁电阻传感器
JP6996478B2 (ja) 2018-11-16 2022-02-04 Tdk株式会社 磁気センサ及び位置検出装置
JP7006670B2 (ja) * 2019-10-24 2022-01-24 Tdk株式会社 磁気センサ
US12146928B2 (en) 2021-04-12 2024-11-19 Analog Devices International Unlimited Company Magnetic field sensor with overcurrent detection
US12078695B2 (en) 2021-04-12 2024-09-03 Analog Devices International Unlimited Company Magnetic field sensor with overcurrent detection
CN115236568B (zh) 2022-09-23 2023-01-20 南方电网数字电网研究院有限公司 基于磁通调节器的宽量程垂直敏感磁传感器及其制备方法
CN115963437B (zh) * 2022-12-21 2023-10-20 南方电网数字电网研究院有限公司 多量程磁传感器、磁场测量方法及导体制备方法
CN115932674B (zh) * 2022-12-29 2025-05-30 上海航天控制技术研究所 一种强磁环境下的磁强计使用方法

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Also Published As

Publication number Publication date
JP6509231B2 (ja) 2019-05-08
US20160327616A1 (en) 2016-11-10
CN103645449A (zh) 2014-03-19
EP3088908B1 (en) 2021-10-20
EP3088908A4 (en) 2017-09-20
EP3088908A1 (en) 2016-11-02
US10024930B2 (en) 2018-07-17
WO2015096744A1 (zh) 2015-07-02
JP2017502298A (ja) 2017-01-19

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