JP6494495B2 - Substrate processing method and substrate processing apparatus - Google Patents

Description

  The present invention relates to a substrate processing method and a substrate processing apparatus.

  Conventionally, in a film forming method in which at least two kinds of reactive gases that react with each other are sequentially supplied to the surface of a substrate and a plurality of reaction product layers are formed by executing this supply cycle, a thin film is formed. From the step of placing the substrate on the turntable in the container and rotating the turntable, and the first reaction gas supply means and the second reaction gas supply means provided in the vacuum vessel apart from each other in the rotation direction, A step of supplying the first reaction gas and the second reaction gas to the surface of the substrate on the substrate mounting region side of the turntable, and between the first reaction gas supply means and the second reaction gas supply means in the rotation direction. The separation gas is supplied from the separation gas supply means provided in the separation region located at the front, and the separation gas supply means is provided in front of a narrow space between the ceiling surface of the vacuum vessel and the rotary table on both sides in the rotation direction. Film formation method having the steps of diffusing the separation gas is known (e.g., see Patent Document 1).

  In such a film forming method, the first exhaust path opened between the first processing region as viewed from the rotation center of the turntable and the separation region adjacent to the first processing region on the downstream side in the rotation direction. An exhaust port and an exhaust port of a second exhaust path that opens between the second processing region as viewed from the rotation center of the rotary table and a separation region adjacent to the second processing region downstream in the rotational direction. From the first processing region and the second processing region, when exhausting the reaction gas together with the separation gas diffusing on both sides of the separation region, a step of exhausting these gases independently from each other, and in the first exhaust path And evacuating the inside of the second exhaust path independently from each other by the first vacuum exhaust means and the second vacuum exhaust means, respectively, from the first processing region and the second processing region, The reactive gas and the second reactive gas are independently discharged. It is. In addition, since the gap space below the rotary table is also extremely narrow, the first reaction gas supplied to the first processing region and the second reaction supplied to the second processing region. The gas is exhausted independently from each other from the first exhaust port and the second exhaust port without communicating below the rotary table.

JP 2008-222728 A

  However, due to the diversification of processes in recent years, it may be required to perform the process in a state where a gap is formed below the rotary table. Specifically, in a high-temperature process, when a wafer is carried into a vacuum vessel and placed on a rotary table, the wafer is greatly warped, and the process cannot be started until the warpage is settled. In some cases, the rotary table is configured to be movable up and down, and when the wafer is placed, the rotary table is lowered to increase the space, and when the warp is settled, the rotary table is raised to execute the process.

  In such a process, since the process is performed with the rotary table raised, a gap is generated below the rotary table, and the first reaction gas and the second reaction gas are mixed through this gap, and independent exhaust is generated. It may not be possible. Since the first reaction gas and the second reaction gas can react with each other to generate a reaction product, the first reaction gas and the second reaction gas are near the first exhaust port or the second exhaust port. When the reaction occurs, an unnecessary reaction product is generated at the first exhaust port or the second exhaust port, and the inside of the vacuum vessel is contaminated.

  Accordingly, the present invention provides a substrate processing method and a substrate processing apparatus that can perform independent exhaust at the first and second exhaust ports even in a process in which a gap is formed below the rotary table. With the goal.

In order to achieve the above object, a substrate processing method according to an aspect of the present invention is provided to exhaust a first processing gas supply region and a first processing gas supplied to the first processing gas supply region. A first exhaust port provided; a second process gas supply region; a second exhaust port provided for exhausting the second process gas supplied to the second process gas supply region; A substrate processing method using a processing chamber having a communication space that communicates the first exhaust port and the second exhaust port,
The communication space is a space below the turntable on which the substrate can be placed on the upper surface,
The first and second exhaust ports are provided below the communication space,
The first processing gas supply region and the second processing gas supply region are separated above the rotary table by a separation region protruding downward from the ceiling surface of the processing chamber. The second processing gas is mixed into the gas supply region and the first processing gas is not mixed into the second processing gas supply region.
The exhaust from the first exhaust port and the second exhaust port, the supply of the first process gas to the first process gas supply region, and the second to the second process gas supply region Rotating the rotary table while supplying the processing gas of
The exhaust pressure at the first exhaust port is set higher than the exhaust pressure at the second exhaust port by a predetermined pressure within a predetermined pressure range, thereby preventing the second processing gas from being mixed into the first exhaust port. Substrate processing.

A substrate processing apparatus according to another aspect of the present invention includes a processing chamber,
A rotary table provided in the processing chamber and capable of placing a substrate on the surface and capable of moving up and down;
First and second process gas supply regions provided apart from each other above the turntable along the circumferential direction of the turntable;
First and second exhaust ports provided below the turntable corresponding to the first and second process gas supply regions, respectively.
First and second pressure regulating valves for regulating the exhaust pressure of the first and second exhaust ports;
The first processing gas supply region and the first processing gas supply region project downward from the ceiling surface of the processing chamber and separate the first processing gas supply region and the second processing gas region above the turntable. A separation region provided between the second processing gas supply region;
When the substrate is placed on the turntable, the turntable is lowered, and when the substrate processing is performed by rotating the turntable, the turntable is raised and the turntable is raised. In order to prevent the second processing gas from being exhausted from the first exhaust port through a communication space where the first exhaust port and the second exhaust port communicate with each other, the exhaust of the first exhaust port Control means for controlling the first and second pressure regulating valves such that the pressure becomes a predetermined pressure higher than the second exhaust pressure.

A substrate processing method according to another aspect of the present invention includes a turntable capable of placing a substrate on an upper surface,
A first source gas supply region for supplying source gas to the substrate, which is disposed above the turntable and spaced apart from each other in the rotation direction, and can react with the source gas to generate a reaction product. A first reaction gas supply region for supplying a reaction gas; a second source gas supply region for supplying the source gas; a second reaction region for supplying the reaction gas;
A first exhaust port provided for exhausting the gas supplied to the first source gas supply region; and an exhaust port provided for exhausting the reaction gas supplied to the first reaction gas supply region. A second exhaust port provided, a third exhaust port provided for exhausting the gas supplied to the second source gas supply region, and a second reaction gas supply region. A fourth exhaust port provided for exhausting the reaction gas;
A substrate processing method using a processing chamber having a communication space that communicates the first to fourth exhaust ports,
Substrate processing is performed by setting the exhaust pressure of the first exhaust port to a predetermined pressure higher than the exhaust pressure of the second to fourth exhaust ports to prevent the reaction gas from being mixed into the first exhaust port. .

A substrate processing apparatus according to another aspect of the present invention includes a processing chamber,
A rotary table provided in the processing chamber and capable of placing a substrate on the surface and capable of moving up and down;
A first source gas supply region, a first reaction gas supply region, a second source gas supply region, and a second reaction gas that are spaced apart from each other above the turn table along the rotation direction of the turn table A supply area;
The first source gas supply region, the first reaction gas supply region, the second source gas supply region, and the second reaction gas supply region are respectively provided below the turntable so as to correspond to the first source gas supply region, the first reaction gas supply region, the second source gas supply region, and the second reaction gas supply region. 1 to 4 exhaust ports;
First to fourth pressure regulating valves for regulating the exhaust pressure of the first to fourth exhaust ports;
Projecting downward from the ceiling surface of the processing chamber, the first source gas supply region, the first reaction gas supply region, the second source gas supply region, and the second source above the turntable Between the first source gas supply region, the first reaction gas supply region, the second source gas supply region, and the second reaction gas supply region so as to separate the reaction gas supply regions. A separation region provided; and
When the substrate is placed on the turntable, the turntable is lowered, and when the substrate processing is performed by rotating the turntable, the turntable is raised and the turntable is raised. In order to prevent the reaction gas from being exhausted from the first exhaust port through the communication space where the first to fourth exhaust ports communicate with each other, the exhaust pressure of the first exhaust port is set to the second to And control means for controlling the first to fourth pressure regulating valves so as to be higher than the exhaust pressure at the fourth exhaust port by a predetermined pressure.

  According to the present invention, independent exhaust can be performed at a plurality of exhaust ports even if a communication space exists below the rotary table.

It is a schematic sectional drawing which shows the substrate processing apparatus by embodiment of this invention. It is a schematic perspective view which shows the structure in the vacuum vessel of the substrate processing apparatus of FIG. It is a schematic plan view which shows the structure in the vacuum vessel of the substrate processing apparatus of FIG. It is a schematic sectional drawing in the said vacuum vessel along the concentric circle of the turntable provided rotatably in the vacuum vessel of the substrate processing apparatus of FIG. It is another schematic sectional drawing of the substrate processing apparatus of FIG. It is the figure which showed an example of the state which the rotary table fell. It is the figure which showed an example of the state which the rotary table raised. It is a figure for showing the basic processing conditions including the arrangement state of the container main body of the simulation result shown in Drawing 9 and after. It is the figure which showed the 1st simulation result. FIG. 9A is a diagram showing a simulation result of the oxygen concentration on the rotary table. FIG. 9B is a diagram showing a simulation result of the oxygen concentration below the rotary table. FIG.9 (c) is the figure which showed the simulation result of the diisopropylaminosilane density | concentration on a rotary table. FIG. 9D is a diagram showing a simulation result of the diisopropylaminosilane concentration below the rotary table. It is the figure which showed the 2nd simulation result. FIG. 10A is a diagram showing a simulation result of the oxygen concentration on the rotary table. FIG. 10B is a diagram showing a simulation result of the oxygen concentration below the rotary table. FIG.10 (c) is the figure which showed the simulation result of the diisopropylaminosilane density | concentration on a rotary table. FIG. 10D is a diagram showing a simulation result of the diisopropylaminosilane concentration below the rotary table. It is the figure which showed the 3rd simulation result. FIG. 11A is a diagram showing a simulation result of the oxygen concentration on the rotary table. FIG.11 (b) is the figure which showed the simulation result of the oxygen concentration below the turntable. FIG.11 (c) is the figure which showed the simulation result of the diisopropylaminosilane density | concentration on a rotary table. FIG. 11D is a diagram showing a simulation result of the diisopropylaminosilane concentration below the rotary table. It is the figure which showed the 4th simulation result. FIG. 12A is a diagram showing a simulation result of the oxygen concentration on the rotary table. FIG. 12B is a diagram showing a simulation result of the oxygen concentration below the rotary table. FIG.12 (c) is the figure which showed the simulation result of the diisopropylaminosilane density | concentration on a rotary table. FIG. 12D is a diagram showing a simulation result of the diisopropylaminosilane concentration below the rotary table. It is a figure for demonstrating the Example of this invention. FIG. 13A is a diagram illustrating an arrangement position of the wafer W. FIG. FIG. 13B is a diagram illustrating film thickness measurement points. It is the figure which showed the result of the Example shown in FIG. It is the figure which showed the 5th simulation result. FIG. 15A is a diagram showing a simulation result of the oxygen concentration on the rotary table. FIG. 15B is a diagram showing a simulation result of the oxygen concentration below the rotary table. FIG. 15C is a diagram showing a simulation result of the diisopropylaminosilane concentration on the rotary table. FIG. 15D is a diagram showing a simulation result of the diisopropylaminosilane concentration below the rotary table. It is the figure which showed the 6th simulation result. FIG. 16A is a diagram showing a simulation result of the oxygen concentration on the rotary table. FIG. 16B is a diagram showing a simulation result of the oxygen concentration below the rotary table. FIG. 16C is a diagram showing a simulation result of the diisopropylaminosilane concentration on the rotary table. FIG. 16D is a diagram showing a simulation result of the diisopropylaminosilane concentration below the rotary table. It is the figure which showed the 7th simulation result. FIG. 17A is a diagram showing a simulation result of the oxygen concentration on the rotary table. FIG. 17B is a diagram showing a simulation result of the oxygen concentration below the rotary table. FIG. 17C is a diagram showing a simulation result of the diisopropylaminosilane concentration on the rotary table. FIG. 17D is a diagram showing a simulation result of the diisopropylaminosilane concentration below the rotary table. It is the figure which showed the 8th simulation result. FIG. 18A is a diagram showing a simulation result of the oxygen concentration on the rotary table. FIG. 18B is a diagram showing a simulation result of the oxygen concentration below the rotary table. FIG. 18C is a diagram showing a simulation result of the diisopropylaminosilane concentration on the rotary table. FIG. 18D is a diagram showing a simulation result of the diisopropylaminosilane concentration below the rotary table. It is the figure which showed an example of the substrate processing apparatus which concerns on the 2nd Embodiment of this invention. It is the figure which showed the result of the 1st simulation experiment of the substrate processing method which concerns on the 2nd Embodiment of this invention. FIG. 20A is a diagram showing a simulation result of the DCS concentration distribution above the rotary table. FIG. 20B is a diagram showing a simulation result of the concentration distribution of NH ₃ plasma above the rotary table. FIG. 20C is a diagram showing a simulation result of the DCS concentration distribution below the rotary table. FIG. 20D is a diagram showing a simulation result of the concentration distribution of NH ₃ plasma below the rotary table. Figure 20 (e) is a diagram showing an NH ₃ simulation result of plasma density distribution in the lower turntable at the time of setting the concentration of the NH ₃ plasma to 10% of the maximum value. It is the figure which showed the result of the 2nd simulation experiment of the substrate processing method which concerns on the 2nd Embodiment of this invention. FIG. 21A is a diagram showing a simulation result of the DCS concentration distribution above the rotary table. FIG. 21B is a diagram showing a simulation result of the concentration distribution of NH ₃ plasma above the rotary table. FIG. 21C is a diagram showing a simulation result of the DCS concentration distribution below the rotary table. FIG. 21 (d) is a diagram showing a simulation result of the concentration distribution of NH ₃ plasma below the rotary table 2. Figure 21 (e) is a diagram showing simulation results of the NH ₃ plasma density distribution of the lower rotary table at the time of setting the concentration of the NH ₃ plasma to 10% of the maximum value. It is the figure which showed the result of the 3rd simulation experiment of the substrate processing method which concerns on the 2nd Embodiment of this invention. FIG. 22A is a diagram showing a simulation result of the DCS concentration distribution above the rotary table. FIG. 22B is a diagram showing a simulation result of the concentration distribution of NH ₃ plasma above the rotary table. FIG. 22C is a diagram showing a simulation result of the DCS concentration distribution below the rotary table. FIG. 22D is a diagram showing a simulation result of the concentration distribution of NH ₃ plasma below the rotary table. Figure 22 (e) is a diagram showing simulation results of the NH ₃ plasma density distribution of the lower rotary table at the time of setting the concentration of the NH ₃ plasma to 10% of the maximum value. It is the figure which showed the result of the 4th simulation experiment of the substrate processing method which concerns on the 2nd Embodiment of this invention. FIG. 23A is a diagram illustrating a simulation result of the DCS concentration distribution above the rotary table. FIG. 23B is a diagram showing a simulation result of the concentration distribution of NH ₃ plasma above the rotary table. FIG. 23C is a diagram showing a simulation result of the DCS concentration distribution below the rotary table. FIG. 23D is a diagram showing a simulation result of the concentration distribution of NH ₃ plasma below the rotary table. Figure 23 (e) is a diagram showing simulation results of the NH ₃ plasma density distribution of the lower rotary table at the time of setting the concentration of the NH ₃ plasma to 10% of the maximum value. It is the figure which showed the result of the 5th simulation experiment of the substrate processing method which concerns on the 2nd Embodiment of this invention. FIG. 24A is a diagram showing a simulation result of the DCS concentration distribution above the rotary table. FIG. 24B is a diagram showing a simulation result of the concentration distribution of NH ₃ plasma above the rotary table. FIG. 24C is a diagram showing a simulation result of the DCS concentration distribution below the rotary table. FIG. 24D is a diagram showing a simulation result of the concentration distribution of NH ₃ plasma below the rotary table. Figure 24 (e) is a diagram showing an NH ₃ simulation result of plasma density distribution in the lower turntable at the time of setting the concentration of the NH ₃ plasma to 10% of the maximum value. It is the figure which showed the result of the 6th simulation experiment of the substrate processing method which concerns on the 2nd Embodiment of this invention. FIG. 25A is a diagram showing a simulation result of the DCS concentration distribution above the rotary table. FIG. 25B is a diagram showing a simulation result of the concentration distribution of NH ₃ plasma above the rotary table. FIG. 25C is a diagram showing a simulation result of the DCS concentration distribution below the rotary table. FIG. 25D is a diagram showing a simulation result of the concentration distribution of NH ₃ plasma below the rotary table. Figure 25 (e) is a diagram showing an NH ₃ simulation result of plasma density distribution in the lower turntable at the time of setting the concentration of the NH ₃ plasma to 10% of the maximum value. It is the figure which showed the result of the 7th simulation experiment of the substrate processing method which concerns on the 2nd Embodiment of this invention. FIG. 26A is a diagram showing a simulation result of the DCS concentration distribution above the rotary table. FIG. 26B is a diagram showing a simulation result of the concentration distribution of NH ₃ plasma above the rotary table. FIG. 26C is a diagram showing a simulation result of the DCS concentration distribution below the rotary table. FIG. 26D is a diagram showing a simulation result of the concentration distribution of NH ₃ plasma below the rotary table. Figure 26 (e) is a diagram showing simulation results of the NH ₃ plasma density distribution of the lower rotary table at the time of setting the concentration of the NH ₃ plasma to 10% of the maximum value.

  DESCRIPTION OF EMBODIMENTS Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings.

[First Embodiment]
1 to 3, a substrate processing apparatus according to a first embodiment of the present invention includes a flat vacuum vessel 1 having a substantially circular planar shape, and a vacuum vessel provided in the vacuum vessel 1. And a turntable 2 having a rotation center at the center of 1. The vacuum container 1 is a processing chamber for accommodating a wafer W therein and performing substrate processing. The vacuum vessel 1 is a container body 12 having a bottomed cylindrical shape, and a ceiling that is detachably attached to the upper surface of the container body 12 through a seal member 13 (FIG. 1) such as an O-ring, for example. And a plate 11.

  The rotary table 2 is fixed to a cylindrical core portion 21 at the center, and the core portion 21 is fixed to the upper end of a rotary shaft 22 extending in the vertical direction. The rotating shaft 22 passes through the bottom portion 14 of the vacuum vessel 1, and a lower end thereof is attached to a driving unit 23 that rotates the rotating shaft 22 (FIG. 1) around a vertical axis. The rotating shaft 22 and the drive unit 23 are accommodated in a cylindrical case body 20 whose upper surface is open. The case body 20 has a flange portion provided on the upper surface thereof airtightly attached to the lower surface of the bottom portion 14 of the vacuum vessel 1, and the airtight state between the internal atmosphere and the external atmosphere of the case body 20 is maintained.

  As shown in FIGS. 2 and 3, a semiconductor wafer (hereinafter referred to as “wafer”) W that is a plurality of (five in the illustrated example) substrates along the rotation direction (circumferential direction) is provided on the surface of the turntable 2. Is provided with a circular recess 24 for mounting the. Note that FIG. 3 shows the wafer W in only one recess 24 for convenience. The recess 24 has an inner diameter slightly larger than the diameter of the wafer W, for example, 4 mm, and a depth substantially equal to the thickness of the wafer W. Therefore, when the wafer W is accommodated in the recess 24, the surface of the wafer W and the surface of the turntable 2 (area where the wafer W is not placed) have the same height. On the bottom surface of the recess 24, a through hole (not shown) through which, for example, three elevating pins for supporting the back surface of the wafer W to raise and lower the wafer W passes is formed.

  2 and 3 are diagrams for explaining the structure inside the vacuum vessel 1, and the top plate 11 is not shown for convenience of explanation. As shown in FIGS. 2 and 3, a processing gas nozzle 31, a processing gas nozzle 32, separation gas nozzles 41 and 42, and a plasma gas nozzle 92 each made of, for example, quartz are disposed above the turntable 2 in the circumferential direction (rotation) of the vacuum vessel 1. They are arranged at intervals in the rotation direction of the table 2 (arrow A in FIG. 3). In the illustrated example, a plasma gas nozzle 92, a separation gas nozzle 41, a processing gas nozzle 31, a separation gas nozzle 42, and a processing gas nozzle 32 are arranged in this order in a clockwise direction (rotation direction of the turntable 2) from a transfer port 15 described later. Yes. These nozzles 92, 31, 32, 41, 42 are provided with gas introduction ports 92 a, 31 a, 32 a, 41 a, 42 a (FIG. 3) that are the base ends of the nozzles 92, 31, 32, 41, 42 (FIG. 3). By being fixed to the outer peripheral wall of 12, the vacuum vessel 1 is introduced into the vacuum container 1 from the outer peripheral wall, and is attached so as to extend horizontally with respect to the rotary table 2 along the radial direction of the container main body 12.

  In addition, a plasma generator 80 is provided above the plasma gas nozzle 92 as shown by a broken line in FIG. The plasma generator 80 may be provided as necessary and is not essential. Therefore, in this embodiment, it will simplify and show.

The processing gas nozzle 31 is connected to a supply source (not shown) of a Si (silicon) -containing gas as a first processing gas via a pipe and a flow rate controller (not shown). The processing gas nozzle 32 is connected to a supply source (not shown) of an oxidizing gas as a second processing gas via a pipe and a flow rate regulator (not shown). The separation gas nozzles 41 and 42 are both connected to a supply source (not shown) of nitrogen (N ₂ ) gas as a separation gas through a pipe and a flow rate adjustment valve (not shown).

As the Si-containing gas, for example, an organic aminosilane gas such as diisopropylaminosilane can be used, and as the oxidizing gas, for example, O ₃ (ozone) gas, O ₂ (oxygen) gas, or a mixed gas thereof can be used. .

  In the processing gas nozzles 31 and 32, a plurality of gas discharge holes 33 opening toward the turntable 2 are arranged along the length direction of the processing gas nozzles 31 and 32, for example, at an interval of 10 mm. A lower region of the processing gas nozzle 31 is a first processing region P1 for adsorbing the Si-containing gas to the wafer W. The area below the process gas nozzle 32 is a second process area P2 that oxidizes the Si-containing gas adsorbed on the wafer W in the first process area P1. Since the first processing region P1 and the second processing region P2 are regions for supplying the first processing gas and the second processing gas, respectively, the first processing gas supply region P1 and the second processing gas are supplied. You may call it gas supply area P2.

  Referring to FIGS. 2 and 3, two convex portions 4 are provided in the vacuum vessel 1. Since the convex portion 4 constitutes the separation region D together with the separation gas nozzles 41 and 42, the convex portion 4 is attached to the back surface of the top plate 11 so as to protrude toward the turntable 2 as described later. The convex portion 4 has a fan-like planar shape with the top portion cut into an arc shape. In the present embodiment, the inner arc is connected to the protruding portion 5 (described later), and the outer arc is a vacuum vessel. It arrange | positions so that the inner peripheral surface of one container main body 12 may be met.

  FIG. 4 shows a cross section of the vacuum vessel 1 along the concentric circles of the turntable 2 from the processing gas nozzle 31 to the processing gas nozzle 32. As shown in the figure, since the convex portion 4 is attached to the back surface of the top plate 11, a flat low ceiling surface 44 (first ceiling surface) which is the lower surface of the convex portion 4 is provided in the vacuum vessel 1. There are ceiling surfaces 45 (second ceiling surfaces) located on both sides in the circumferential direction of the ceiling surface 44 and higher than the ceiling surface 44. The ceiling surface 44 has a fan-shaped planar shape with a top portion cut into an arc shape. Further, as shown in the figure, the convex portion 4 is formed with a groove 43 formed so as to extend in the radial direction at the center in the circumferential direction, and the separation gas nozzle 42 is accommodated in the groove 43. A groove 43 is similarly formed in the other convex portion 4, and a separation gas nozzle 41 is accommodated therein. Further, process gas nozzles 31 and 32 are provided in spaces 481 and 482 below the high ceiling surface 45, respectively. These processing gas nozzles 31 and 32 are provided in the vicinity of the wafer W so as to be separated from the ceiling surface 45.

  Further, the separation gas nozzles 41 and 42 accommodated in the groove portion 43 of the convex portion 4 have a plurality of gas discharge holes 42 h (see FIG. 4) opened toward the rotary table 2, and the lengths of the separation gas nozzles 41 and 42. Along the direction, for example, they are arranged at intervals of 10 mm.

The ceiling surface 44 forms a separation space H that is a narrow space with respect to the turntable 2. When N ₂ gas is supplied from the discharge hole 42 h of the separation gas nozzle 42, the N ₂ gas flows toward the space 481 and the space 482 through the separation space H. At this time, since the volume of the separation space H is smaller than the volume of the spaces 481 and 482, the pressure of the separation space H can be made higher than the pressure of the spaces 481 and 482 by N ₂ gas. That is, a separation space H having a high pressure is formed between the spaces 481 and 482. Further, the N ₂ gas flowing out from the separation space H to the spaces 481 and 482 serves as a counter flow for the Si-containing gas from the first region P1 and the oxidizing gas from the second region P2. Therefore, the Si-containing gas from the first region P1 and the oxidizing gas from the second region P2 are separated by the separation space H. Therefore, mixing and reaction of the Si-containing gas and the oxidizing gas in the vacuum container 1 are suppressed.

The height h1 of the ceiling surface 44 with respect to the upper surface of the turntable 2 takes into account the pressure in the vacuum vessel 1 during film formation, the rotation speed of the turntable 2, the supply amount of separation gas (N ₂ gas) to be supplied, and the like. In addition, it is preferable to set the pressure in the separation space H to a height suitable for increasing the pressure in the spaces 481 and 482.

  On the other hand, a protrusion 5 (FIGS. 1 to 3) surrounding the outer periphery of the core portion 21 that fixes the rotary table 2 is provided on the lower surface of the top plate 11. In this embodiment, the protruding portion 5 is continuous with a portion on the rotation center side of the convex portion 4, and the lower surface thereof is formed at the same height as the ceiling surface 44.

  FIG. 1 referred to above is a cross-sectional view taken along the line II ′ of FIG. 3 and shows a region where the ceiling surface 45 is provided. On the other hand, FIG. 5 is a cross-sectional view showing a region where the ceiling surface 44 is provided. As shown in FIG. 5, a bent portion 46 that bends in an L shape so as to be opposed to the outer end surface of the rotary table 2 at the peripheral portion of the fan-shaped convex portion 4 (a portion on the outer edge side of the vacuum vessel 1). Is formed. Similar to the convex portion 4, the bent portion 46 prevents the processing gas from entering from both sides of the separation region D and suppresses the mixing of both processing gases. The fan-shaped convex portion 4 is provided on the top plate 11 so that the top plate 11 can be removed from the container body 12, so that there is a slight gap between the outer peripheral surface of the bent portion 46 and the container body 12. There is. The gap between the inner peripheral surface of the bent portion 46 and the outer end surface of the turntable 2 and the gap between the outer peripheral surface of the bent portion 46 and the container body 12 are, for example, the same dimensions as the height of the ceiling surface 44 with respect to the upper surface of the turntable 2. Is set to

  As shown in FIG. 4, the inner peripheral wall of the container main body 12 is formed in a vertical plane close to the outer peripheral surface of the bent portion 46 as shown in FIG. 4. As shown, for example, it is recessed outward from the portion facing the outer end surface of the turntable 2 to the bottom 14. Hereinafter, for convenience of explanation, a recessed portion having a substantially rectangular cross-sectional shape is referred to as an exhaust region. Specifically, an exhaust region communicating with the first processing region P1 is referred to as a first exhaust region E1, and a region communicating with the second processing region P2 is referred to as a second exhaust region E2. As shown in FIGS. 1 to 3, a first exhaust port 610 and a second exhaust port 620 are formed at the bottoms of the first exhaust region E1 and the second exhaust region E2, respectively. . As shown in FIGS. 1 and 3, the first exhaust port 610 and the second exhaust port 620 are connected to, for example, vacuum pumps 640 and 641, which are vacuum exhaust means, through exhaust pipes 630 and 631, respectively. The exhaust pipe 630 between the first exhaust port 610 and the vacuum pump 640 is provided with an automatic pressure control device (APC, Auto Pressure Controller) 650 as pressure adjusting means. Similarly, the exhaust pipe 631 between the second exhaust port 620 and the vacuum pump 641 is provided with an automatic pressure controller 651 as pressure adjusting means, and the first exhaust port 610 and the second exhaust port 620 are connected to each other. The exhaust pressure is configured to be independently controllable.

  As shown in FIGS. 1 and 5, a heater unit 7 serving as a heating unit is provided in the space between the turntable 2 and the bottom 14 of the vacuum vessel 1, and the wafer on the turntable 2 is interposed via the turntable 2. W is heated to a temperature determined in the process recipe (for example, 450 ° C.). On the lower side near the periphery of the turntable 2, the lower area of the turntable 2 is partitioned by dividing the atmosphere from the upper space of the turntable 2 to the exhaust areas E1 and E2 and the atmosphere in which the heater unit 7 is placed. A ring-shaped cover member 71 is provided to suppress gas intrusion into the substrate (FIG. 5). This cover member 71 is provided between the outer edge of the turntable 2 and an inner member 71 a provided so that the outer peripheral side faces the lower side from the outer edge, and between the inner member 71 a and the inner wall surface of the vacuum vessel 1. An outer member 71b. The outer member 71b is provided close to the bent portion 46 below the bent portion 46 formed at the outer edge portion of the convex portion 4 in the separation region D, and the inner member 71a is provided below the outer edge portion of the turntable 2. The heater unit 7 is surrounded over the entire circumference (and below the portion slightly outside the outer edge).

The bottom portion 14 at a portion closer to the rotation center than the space where the heater unit 7 is disposed protrudes upward so as to approach the core portion 21 near the center portion of the lower surface of the turntable 2 to form a protrusion 12a. Yes. The space between the projecting portion 12a and the core portion 21 is a narrow space, and the gap between the inner peripheral surface of the through hole of the rotary shaft 22 penetrating the bottom portion 14 and the rotary shaft 22 is narrow, and these narrow spaces are formed. The space communicates with the case body 20. The case body 20 is provided with a purge gas supply pipe 72 for supplying N ₂ gas as a purge gas into a narrow space for purging. A plurality of purge gas supply pipes 73 for purging the arrangement space of the heater unit 7 are provided at the bottom 14 of the vacuum vessel 1 at predetermined angular intervals in the circumferential direction below the heater unit 7 (FIG. 5). Shows one purge gas supply pipe 73). In addition, between the heater unit 7 and the turntable 2, in order to suppress gas intrusion into the region where the heater unit 7 is provided, the protruding portion 12a from the inner peripheral wall of the outer member 71b (the upper surface of the inner member 71a). A lid member 7a is provided to cover the space between the upper end portion of the cover member and the upper end portion in the circumferential direction. The lid member 7a can be made of quartz, for example.

Further, a separation gas supply pipe 51 is connected to the central portion of the top plate 11 of the vacuum vessel 1 so that N ₂ gas as separation gas is supplied to the space 52 between the top plate 11 and the core portion 21. It is configured. The separation gas supplied to the space 52 is discharged toward the periphery along the surface of the turntable 2 on the wafer mounting region side through a narrow gap 50 between the protrusion 5 and the turntable 2. The space 50 can be maintained at a higher pressure than the spaces 481 and 482 by the separation gas. Therefore, the space 50 prevents the Si-containing gas supplied to the first processing region P1 and the oxidizing gas supplied to the second processing region P2 from mixing through the central region C. That is, the space 50 (or the center region C) can function in the same manner as the separation space H (or the separation region D).

  Further, as shown in FIG. 3, a transfer port 15 for transferring a wafer W as a substrate between the external transfer arm 10 and the rotary table 2 is formed on the side wall of the vacuum vessel 1. The transport port 15 is opened and closed by a gate valve (not shown). Further, since the wafer 24 is transferred to and from the transfer arm 10 at the position facing the transfer port 15 in the recess 24 which is a wafer mounting area in the rotary table 2, the transfer position is set on the lower side of the rotary table 2. In the corresponding part, there are provided transfer raising / lowering pins for penetrating the recess 24 and lifting the wafer W from the back surface and its raising / lowering mechanism (both not shown).

  Further, as shown in FIG. 1, the substrate processing apparatus according to the present embodiment is provided with a control unit 100 composed of a computer for controlling the operation of the entire apparatus. A program for causing the substrate processing apparatus to execute a substrate processing method to be described later is stored under the control of the control unit 100. This program has a set of steps so as to execute a substrate processing method to be described later, and is stored in a recording medium 102 such as a hard disk, a compact disk, a magneto-optical disk, a memory card, a flexible disk, etc. Is read into the storage unit 101 and installed in the control unit 100.

  Further, as shown in FIG. 1, a bellows 16 is provided between the bottom 14 of the container body 12 around the rotation shaft 22 and the case body 20. Further, on the outside of the bellows 16, an elevating mechanism 17 that can raise and lower the rotary table 2 and change the height of the rotary table 2 is provided. By such an elevating mechanism 17, the rotary table 2 is raised and lowered, and the bellows 16 is expanded and contracted in response to the raising and lowering of the rotary table 2, so that the distance between the ceiling surface 45 and the wafer W can be changed. By providing the bellows 16 and the elevating mechanism 17 as a part of the components constituting the rotation shaft of the turntable 2, the distance between the ceiling surface 45 and the wafer W can be increased while keeping the processing surface of the wafer W parallel. Can be changed. The elevating mechanism 17 may be realized by various configurations as long as the rotary table 2 can be raised and lowered. For example, the elevating mechanism 17 may have a structure in which the length of the rotary shaft 22 is expanded and contracted by a gear or the like.

  The elevating mechanism 17 is provided because, when the substrate processing is performed while the inside of the vacuum vessel 1 is kept at a high temperature of 400 ° C. or higher, even if the heater unit 7 is stopped for carrying out and carrying in the wafer W, This is because the inside of the vacuum vessel 1 is still kept at a high temperature, and when the wafer W is loaded into the vacuum vessel 1 and placed on the rotary table 2, a phenomenon occurs that the wafer W is greatly warped.

  FIG. 6 is a partially enlarged view showing an example of a state where the rotary table 2 is lowered. As shown in FIGS. 5 and 6, when the wafer W is placed on the turntable 2, the turntable 2 is lowered, and even if the wafer W is warped, it does not contact the ceiling surface 44. The space having the distance d1 is maintained (the ceiling surface 44 and the lower surface of the protrusion 5 are the same height). On the other hand, since the warpage of all the wafers W is settled and when the film formation process is performed on the wafer W by rotating the turntable 2, it is necessary to keep the clearance between the wafer W and the ceiling surface 44 narrow. The film forming process is performed with 2 raised. By providing such an elevating mechanism 17 for the rotary table 2, damage to the wafer W due to contact of the warped wafer W with the ceiling surfaces 44 and 45 can be prevented. Further, even if the wafer W placed on the turntable 2 is still warped, the turntable 2 is intermittently rotated without waiting for the warpage to be settled, and the wafers W are sequentially moved to the plurality of recesses 24. Can be mounted, and productivity can be improved. That is, since there is a margin between the turntable 2 and the ceiling surfaces 44 and 45, after placing one wafer W on the recess 24 of the turntable 2, before the warpage of the placed wafer W is settled. The next wafer W can be placed on the next recess 24. As a result, the overall time for placing a plurality of wafers W on the turntable 2 can be shortened, and productivity can be improved. In addition, the distance d1 of the space between the rotary table 2 and the ceiling surface 44 is set in a range of 8 to 18 mm, preferably in a range of 10 to 15 mm, and specifically may be set to 13 mm, for example.

  As shown in FIGS. 5 and 6, when the turntable 2 is lowered, a space having a distance d1 from the ceiling surface 44 is formed above the turntable 2, and the lower surface of the turntable 2 and the lid member The distance d2 between the gaps 7a is very narrow, for example, about 3 mm. In this state, the processing gas hardly passes below the turntable 2, and the second processing gas supplied to the second processing region P2 passes through the lower surface of the turntable 2 and performs the first processing. The air reaches the region P1 and is hardly exhausted from the first exhaust port 610.

  FIG. 7 is a view showing an example of a state in which the rotary table 2 is raised. As shown in FIG. 7, when the turntable 2 is raised, the distance d1 between the turntable 2 and the process gas nozzles 31 and 32 becomes very small, for example, about 3 mm, but the turntable 2 and the lid member 7a. The distance d2 between the two is increased, and a space through which the processing gas can communicate is obtained. As described above, if the lower surface of the turntable 2 has a clearance of 3 mm (distance d2) first and the ceiling surface 44 and the clearance of 3 mm (distance d1) after ascending, the bottom surface of the turntable 2 and the lid member 7a The distance d2 is also about 8 to 18 mm, for example, 13 mm. When processing such as film formation is performed on the wafer W in such a state, the processing gas communicates with the communication space formed under the turntable 2, and the second processing gas reaches the first processing region P1. A phenomenon occurs in which the air is exhausted from the first exhaust port 610. Then, the first processing gas and the second processing gas react with each other by CVD (Chemical Vapor Deposition), and unnecessary reaction products such as a silicon oxide film are deposited on the first exhaust port 610.

  In order to prevent such a phenomenon, in the substrate processing method and the substrate processing apparatus according to the embodiment of the present invention, the first exhaust port is adjusted by adjusting the exhaust pressure of the first exhaust port 610 and the second exhaust port 620. Control is performed such that the second processing gas is not exhausted from 610 and the second processing gas is exhausted from the second exhaust port 620. The specific contents will be described below using simulation results.

  FIG. 8 is a diagram for illustrating basic processing conditions including the arrangement state of the container main body 12 in the simulation results shown in FIG. 9 and subsequent figures. As shown in FIG. 8, the container body 12 is disposed such that the transport port 15 is disposed on the lower side of the sheet, the first exhaust port 610 is disposed on the upper right side, and the second exhaust port 620 is disposed on the upper left side. The following simulation results are shown. Further, from the processing gas nozzle 31, diisopropylaminosilane gas, which is a kind of Si-containing gas, is supplied at a flow rate of 300 sccm (0.3 slm) together with Ar gas as a carrier gas (Ar gas has a flow rate of 1000 sccm (1 slm)). . Further, ozone gas is supplied from the processing gas nozzle 32 at a flow rate of 6 slm. Further, from the plasma gas nozzle 92, Ar gas is supplied as a mixed gas at a flow rate of 15 slm and oxygen gas is 75 sccm. The pressure in the vacuum vessel 1 is 2 Torr, and the temperature of the wafer W is set to 400 ° C. Ar gas is supplied at 3 slm from the separation gas supply pipe 51 above the rotary shaft 22, and Ar gas is supplied from the purge gas supply pipe 72 at 10 slm. Ar gas is supplied at 5 slm from the separation gas nozzles 41 and 42.

  Further, here, the processing gas nozzle 31 is in the first processing region P1 and the processing gas nozzle 32 is in the second processing region P2, but the second processing region P2 is more than three times the first processing region P2. It has a width of For example, the opening angle of the first processing region P1 is about 30 to 60 degrees, whereas the opening angle of the second processing region P2 is about 120 to 270 degrees. The area P1 is set to 75 degrees, and the second processing area P2 is set to about 165 degrees. The first and second exhaust ports 610 and 620 are both at the downstream end in the rotation direction of the turntable 2 in the first and second processing regions P1 and P2, and the processing gas nozzle 32 is disposed in the second processing region. Since it is at the upstream end, the distance between the processing gas nozzle 32 and the first exhaust port 610 is smaller than the distance between the processing gas nozzle 32 and the second exhaust port.

  From these basic conditions, several conditions including the exhaust pressures of the first and second exhaust ports are changed to simulate the flow distribution of ozone gas supplied from the process gas nozzle 32 and diisopropylaminosilane gas supplied from the process gas nozzle 31. I did.

  FIG. 9 shows a simulation of a state in which the Ar gas supply amount from the purge gas supply pipe 720 below the central shaft 22 is reduced to 1.8 slm with the exhaust pressure of the first and second exhaust ports 610 and 620 being 2 Torr. It is the figure which showed the result. FIG. 9A is a diagram showing a simulation result of the oxygen concentration on the turntable 2, and FIG. 9B is a diagram showing a simulation result of the oxygen concentration below the turntable 2. A region where the oxygen concentration is detected to be high is shown as level A, a region where the oxygen concentration is not detected so much is shown as level B, and a region where the oxygen concentration is hardly detected is shown as level C.

  As shown in FIG. 9A, on the turntable 2, 60% oxygen concentration was detected at the first exhaust port 610, and a small amount of ozone gas was mixed into the first exhaust port 610.

  On the other hand, as shown in FIG. 9B, below the turntable 2, the ozone gas reaches the second exhaust port 620, but also reaches the first exhaust port 610 at the same time. I understand. In other words, all ozone gas should be exhausted from the second exhaust port 620 originally, but a considerable amount is exhausted from the first exhaust port 610.

  FIG. 9C is a diagram showing a simulation result of the diisopropylaminosilane concentration on the turntable 2, and FIG. 9D is a diagram showing a simulation result of the diisopropylaminosilane concentration below the turntable 2. . A region where the diisopropylaminosilane concentration is detected to be high is indicated as level A, a region where the diisopropylaminosilane concentration is not detected so much as level B, and a region where the diisopropylaminosilane concentration is hardly detected as level C.

  As shown in FIG. 9C, it can be seen that on the turntable 2, the diisopropylaminosilane gas is supplied to the first processing region P1 and is appropriately exhausted from the first exhaust port 610.

  Further, as shown in FIG. 9D, it can be seen that the concentration of the diisopropylaminosilane gas at the first exhaust port 610 is level B even below the turntable 2 and is at a level with no problem.

  As described above, it is understood that when the exhaust pressures of the first exhaust port 610 and the second exhaust port 620 are equal to 2 Torr, ozone gas is mixed into the first exhaust port 610 below the turntable 2. .

  FIG. 10 shows a simulation result in a state where the pressure of the exhaust gas at the first and second exhaust ports 610 and 620 is 2 Torr and the amount of Ar gas supplied from the purge gas supply pipe 72 below the center shaft 22 is increased to 10 slm. FIG. 10A is a diagram showing a simulation result of the oxygen concentration on the turntable 2, and FIG. 10B is a diagram showing a simulation result of the oxygen concentration below the turntable 2. As shown in FIG. Similarly to FIGS. 9A and 9B, the region where the oxygen concentration is detected to be high is level A, the region where the oxygen concentration is not detected so much is level B, and the region where the oxygen concentration is hardly detected is level. Shown as C.

  As shown in FIG. 10A, on the turntable 2, an oxygen concentration of 40% was detected at the first exhaust port 610. It can be seen that by increasing the flow rate of Ar gas from the lower side of the central shaft 22, the mixing of ozone gas into the first exhaust port 610 can be slightly reduced as compared with the case of FIG. However, there is still a small amount of contamination in the first exhaust port 610.

  Further, as shown in FIG. 10 (b), the oxygen concentration dispersion is lower below the turntable 2 than in the case of FIG. 9 (b), but ozone gas is still in the first and second regions. It can be seen that both exhaust ports 610 and 620 are reached. That is, all ozone gas should be exhausted from the second exhaust port 620 originally, but a considerable amount is exhausted from the first exhaust port 610 as in the case of FIG. 9B. It has become a state.

  FIG. 10C is a diagram showing a simulation result of the diisopropylaminosilane concentration on the turntable 2, and FIG. 10D is a diagram showing a simulation result of the diisopropylaminosilane concentration below the turntable 2. . As in FIGS. 9C and 9D, the region where the diisopropylaminosilane concentration was detected to be high was level A, the region where the diisopropylaminosilane concentration was not detected so much was level B, and the diisopropylaminosilane concentration was hardly detected. The region is shown as level C.

  As shown in FIG. 10C, it can be seen that on the turntable 2, the diisopropylaminosilane gas is supplied to the first processing region P <b> 1 and is appropriately exhausted from the first exhaust port 610.

  Further, as shown in FIG. 10 (d), even under the turntable 2, the concentration of the diisopropylaminosilane gas in the first exhaust port 610 is level B, so that it can be seen that there is no problem.

  Thus, when the exhaust pressures of the first exhaust port 610 and the second exhaust port 620 are equally 2 Torr, even if the amount of purge gas supplied from the lower side of the rotary shaft 22 is increased, the lower side of the rotary table 2 It can be seen that ozone gas is mixed into the first exhaust port 610.

  FIG. 11 is a diagram showing a simulation result in a state where the exhaust pressure of the first exhaust port 610 is 2.1 Torr, the exhaust pressure of the second exhaust port 620 is 2 Torr, and a differential pressure of 0.1 Torr is provided. . FIG. 11A is a diagram showing a simulation result of the oxygen concentration on the turntable 2, and FIG. 11B is a diagram showing a simulation result of the oxygen concentration below the turntable 2. 9A, 9B, 10A, and 10B, the region where the oxygen concentration is detected to be high is level A, and the region where the oxygen concentration is not detected so much is level B, oxygen. An area where the density is hardly detected is shown as level C.

  As shown in FIG. 11A, it can be seen that on the turntable 2, the oxygen concentration is detected only at the level B at the first exhaust port 610, and no mixing is observed.

  Further, as shown in FIG. 11B, below the turntable 2, although the oxygen concentration dispersion is smaller than in the case of FIG. 10B, the ozone gas enters the first exhaust port 610. It can be seen that only a small amount has been reached. In other words, all ozone gas should be exhausted from the second exhaust port 620 originally, but a small amount is exhausted from the first exhaust port 610.

  FIG. 11C is a diagram showing a simulation result of the diisopropylaminosilane concentration on the turntable 2, and FIG. 11D is a diagram showing a simulation result of the diisopropylaminosilane concentration below the turntable 2. . 9C, 9D, 10C, and 10D, the region in which the diisopropylaminosilane concentration is detected to be high is level A, and the region in which the diisopropylaminosilane concentration is not detected is level B. A region where almost no diisopropylaminosilane concentration was detected is shown as level C.

  As shown in FIG. 11C, it can be seen that on the turntable 2, the diisopropylaminosilane gas is supplied to the first processing region P <b> 1 and is appropriately exhausted from the first exhaust port 610.

  Further, as shown in FIG. 11 (d), the concentration of the diisopropylaminosilane gas in the first exhaust port 610 is level B even below the turntable 2, so that it can be seen that there is no problem.

  Thus, when the exhaust pressure of the first exhaust port 610 is 2.1 Torr, the exhaust pressure of the second exhaust port 620 is 2 Torr, and a differential pressure of 0.1 Torr is provided, although an improvement is seen, the rotary table Under 2, it can be seen that a small amount of ozone gas is mixed into the first exhaust port 610.

  FIG. 12 is a diagram showing a simulation result in a state where the exhaust pressure of the first exhaust port 610 is 2.2 Torr, the exhaust pressure of the second exhaust port 620 is 2 Torr, and a differential pressure of 0.2 Torr is provided. . FIG. 12A is a diagram showing a simulation result of the oxygen concentration on the turntable 2, and FIG. 12B is a diagram showing a simulation result of the oxygen concentration below the turntable 2. As in FIGS. 9A, 9B to 11A, 11B, the region where the oxygen concentration is detected is level A, the region where the oxygen concentration is not detected so much is level B, oxygen An area where the density is hardly detected is shown as level C.

  As shown in FIG. 12A, it can be seen that on the turntable 2, only the level C amount is detected at the first exhaust port 610, and almost no contamination is observed.

  Also, as shown in FIG. 12B, ozone gas does not reach the first exhaust port 610 but reaches only the second exhaust port 620 even below the turntable 2. Thus, it can be seen that the ozone gas, which is the second processing gas, is exhausted only from the second exhaust port 620, and the desired state can be achieved.

  FIG. 12C is a diagram showing a simulation result of the diisopropylaminosilane concentration on the turntable 2, and FIG. 12D is a diagram showing a simulation result of the diisopropylaminosilane concentration below the turntable 2. . 9 (c), (d) to FIG. 11 (c), (d), the region where the diisopropylaminosilane concentration is detected to be high is level A, and the region where the diisopropylaminosilane concentration is not detected so much is level B. A region where almost no diisopropylaminosilane concentration was detected is shown as level C.

  As shown in FIG. 12C, it can be seen that on the turntable 2, the diisopropylaminosilane gas is supplied to the first processing region P <b> 1 and is appropriately exhausted from the first exhaust port 610.

  Further, as shown in FIG. 12 (d), the concentration of the diisopropylaminosilane gas in the first exhaust port 610 is level B even below the turntable 2, so that it can be seen that there is no problem.

  Thus, when the exhaust pressure of the first exhaust port 610 is 2.2 Torr, the exhaust pressure of the second exhaust port 620 is 2 Torr, and a differential pressure of 0.2 Torr is provided, the ozone gas below the turntable 2 It has been shown that mixing into the first exhaust port 610 can be prevented.

  In FIG. 13, six wafers W are placed on the rotary table 2 without rotating the rotary table 2, and the film forming process is performed by changing the exhaust pressure conditions of the first and second exhaust ports 610 and 620. It is a figure for demonstrating the Example at the time of performing. FIG. 13A is a diagram illustrating the arrangement position of the wafer W, and FIG. 13B is a diagram illustrating film thickness measurement points.

  As shown in FIG. 13A, the exhaust port 15 is disposed on the lower side, the first exhaust port 610 is disposed on the upper right side, the second exhaust port 620 is disposed on the upper left side, the processing gas nozzle 31 is disposed on the upper right side, and the processing gas nozzle 32 is disposed on the lower right side. The simulation was performed under the condition.

  In addition, as shown in FIG. 13B, 49 film thickness measurement points P1 to P49 were set. The film thickness measurement points were arranged in three rows in the radial direction and almost uniformly over 360 ° on each row. As shown in FIG. 13A, the first exhaust port 610 is near the film thickness measurement point P44.

  FIG. 14 is a diagram showing the results of the example shown in FIG. As shown in FIG. 14, when the exhaust pressures of the first exhaust port 610 and the second exhaust port 620 were equally set to 1.8 Torr, the film thickness increased in the vicinity of the film thickness measurement points P42 to P46. This means that a CVD reaction has occurred in the vicinity of the first exhaust port 610 since it is in the vicinity of the first exhaust port 610.

  On the other hand, when the exhaust pressure of the first exhaust port 610 is set to 2.0 Torr and the exhaust pressure of the second exhaust port 620 is set to 1.8 Torr, the film thickness does not increase in the vicinity of the film thickness measurement points P42 to P46. No film formation occurred. This means that the second processing gas is not mixed in the first exhaust port 610.

  Thus, according to this embodiment, when the exhaust pressure at the first exhaust port 610 and the exhaust pressure at the second exhaust port 620 are set in the vicinity of 2.0 Torr, a 10% 0.2 Torr differential pressure is provided. It was shown that the mixed exhaust of the second processing gas from the first exhaust port 610 can be prevented by making the exhaust pressure of the first exhaust port 610 higher than the exhaust pressure of the second exhaust port 620.

  FIG. 15 is a diagram showing a simulation result when the exhaust pressures of the first and second exhaust ports 610 and 620 are both 4 Torr and no differential pressure is provided. FIG. 15A is a diagram showing a simulation result of the oxygen concentration on the turntable 2, and FIG. 15B is a diagram showing a simulation result of the oxygen concentration below the turntable 2. 9A, 9B, 12A, and 12B, the region where the oxygen concentration is detected to be high is level A, and the region where the oxygen concentration is not detected so much is level B, oxygen. An area where the density is hardly detected is shown as level C.

  As shown in FIG. 15 (a), it can be seen that on the turntable 2, the oxygen concentration is detected only at the level B at the first exhaust port 610, and there is little mixing.

  On the other hand, as shown in FIG. 15B, below the turntable 2, the ozone gas reaches the second exhaust port 620, but also reaches the vicinity of the first exhaust port 610 at the same time. I understand that. In other words, all ozone gas should be exhausted from the second exhaust port 620 originally, but the ozone gas can be exhausted from the first exhaust port 610.

  FIG. 15C is a diagram showing a simulation result of the diisopropylaminosilane concentration on the turntable 2, and FIG. 15D is a diagram showing a simulation result of the diisopropylaminosilane concentration below the turntable 2. . 9 (c), (d) to FIG. 12 (c), (d), the region where the diisopropylaminosilane concentration is detected to be high is level A, and the region where the diisopropylaminosilane concentration is not detected so much is level B. A region where almost no diisopropylaminosilane concentration was detected is shown as level C.

  As shown in FIG. 15 (c), it can be seen that on the turntable 2, the diisopropylaminosilane gas is supplied to the first processing region P <b> 1 and is appropriately exhausted from the first exhaust port 610.

  Further, as shown in FIG. 15 (d), the concentration of diisopropylaminosilane gas in the first exhaust port 610 is level B even below the turntable 2, and it can be seen that there is no problem.

  As described above, when the exhaust pressures of the first and second exhaust ports 610 and 620 are equally 4 Torr and no differential pressure is provided, there is no problem on the rotary table 2, but the second process is performed below the rotary table 2. It can be seen that ozone gas, which is a gas, may be mixed into the first exhaust port 610.

  FIG. 16 is a diagram showing a simulation result in a state where the exhaust pressure of the first exhaust port 610 is 4.075 Torr, the exhaust pressure of the second exhaust port 620 is 4 Torr, and a differential pressure of 0.75 Torr is provided. . FIG. 16A is a diagram showing a simulation result of the oxygen concentration on the turntable 2, and FIG. 16B is a diagram showing a simulation result of the oxygen concentration below the turntable 2. 9A, 9B, 12A, and 12B, the region where the oxygen concentration is detected to be high is level A, and the region where the oxygen concentration is not detected so much is level B, oxygen. An area where the density is hardly detected is shown as level C.

  As shown in FIG. 16A, it can be seen that on the turntable 2, only the level C amount is detected at the first exhaust port 610, and almost no mixing is observed.

  Further, as shown in FIG. 16B, ozone gas does not reach the first exhaust port 610 but only reaches the second exhaust port 620 even below the turntable 2. Thus, it can be seen that the ozone gas, which is the second processing gas, is exhausted only from the second exhaust port 620, and the desired state can be achieved.

  FIG. 16C is a diagram showing a simulation result of the diisopropylaminosilane concentration on the turntable 2, and FIG. 16D is a diagram showing a simulation result of the diisopropylaminosilane concentration below the turntable 2. . 9 (c), (d) to FIG. 12 (c), (d), the region where the diisopropylaminosilane concentration is detected to be high is level A, and the region where the diisopropylaminosilane concentration is not detected so much is level B. A region where almost no diisopropylaminosilane concentration was detected is shown as level C.

  As shown in FIG. 16C, it can be seen that on the turntable 2, the diisopropylaminosilane gas is supplied to the first processing region P <b> 1 and is appropriately exhausted from the first exhaust port 610.

  Further, as shown in FIG. 16D, it can be seen that the concentration of the diisopropylaminosilane gas at the first exhaust port 610 is level B even below the turntable 2, so that there is no problem.

  In this way, the exhaust pressure of the first exhaust port 610 is 4.075 Torr, the exhaust pressure of the second exhaust port 620 is 4 Torr, and a differential pressure of 0.75 Torr is provided under the condition of an exhaust pressure of about 4 Torr. In this case, it was shown that mixing of ozone gas below the turntable 2 into the first exhaust port 610 can be prevented.

  FIG. 17 is a diagram showing a simulation result when the exhaust pressures of the first and second exhaust ports 610 and 620 are both 7 Torr and no differential pressure is provided. As other film forming conditions, the supply amount of Ar gas from the purge gas supply pipe 72 was reduced to 6 slm, and the supply amount of Ar gas from the separation gas nozzles 41 and 42 was increased to 8 slm. FIG. 17A is a diagram illustrating a simulation result of the oxygen concentration on the turntable 2, and FIG. 17B is a diagram illustrating a simulation result of the oxygen concentration below the turntable 2. 9A, 9B, 12A, and 12B, the region where the oxygen concentration is detected to be high is level A, and the region where the oxygen concentration is not detected so much is level B, oxygen. An area where the density is hardly detected is shown as level C.

  As shown in FIG. 17A, it can be seen that on the turntable 2, only the level C is detected at the first exhaust port 610, and almost no contamination is observed.

  On the other hand, as shown in FIG. 17B, below the turntable 2, the ozone gas reaches the second exhaust port 620, but also reaches the vicinity of the first exhaust port 610 at the same time. I understand that. In other words, all ozone gas should be exhausted from the second exhaust port 620 originally, but the ozone gas can be exhausted from the first exhaust port 610.

  FIG. 17C is a diagram showing a simulation result of the diisopropylaminosilane concentration on the turntable 2, and FIG. 17D is a diagram showing a simulation result of the diisopropylaminosilane concentration below the turntable 2. . 9 (c), (d) to FIG. 12 (c), (d), the region where the diisopropylaminosilane concentration is detected to be high is level A, and the region where the diisopropylaminosilane concentration is not detected so much is level B. A region where almost no diisopropylaminosilane concentration was detected is shown as level C.

  As shown in FIG. 17C, it can be seen that on the turntable 2, the diisopropylaminosilane gas is supplied to the first processing region P <b> 1 and is appropriately exhausted from the first exhaust port 610.

  Further, as shown in FIG. 17 (d), it can be seen that the concentration of the diisopropylaminosilane gas at the first exhaust port 610 is level B even under the turntable 2, so that there is no problem.

  As described above, when the exhaust pressures of the first and second exhaust ports 610 and 620 are equal to 7 Torr and no differential pressure is provided, there is no problem on the rotary table 2, but the second process is performed below the rotary table 2. It can be seen that ozone gas, which is a gas, may be mixed into the first exhaust port 610.

  FIG. 18 is a diagram showing a simulation result in a state where the exhaust pressure of the first exhaust port 610 is 7.02 Torr, the exhaust pressure of the second exhaust port 620 is 7 Torr, and a differential pressure of 0.02 Torr is provided. . As other film forming conditions, the supply amount of Ar gas from the purge gas supply pipe 72 was reduced to 6 slm, and the supply amount of Ar gas from the separation gas nozzles 41 and 42 was increased to 8 slm. FIG. 18A is a diagram showing a simulation result of the oxygen concentration on the turntable 2, and FIG. 18B is a diagram showing a simulation result of the oxygen concentration below the turntable 2. 9A, 9B, 12A, and 12B, the region where the oxygen concentration is detected to be high is level A, and the region where the oxygen concentration is not detected so much is level B, oxygen. An area where the density is hardly detected is shown as level C.

  As shown in FIG. 18A, it can be seen that on the turntable 2, the oxygen concentration is detected only at the level C at the first exhaust port 610, and almost no mixing is observed.

  Further, as shown in FIG. 18B, the ozone gas does not reach the first exhaust port 610 but reaches only the second exhaust port 620 even below the turntable 2. Thus, it can be seen that the ozone gas, which is the second processing gas, is exhausted only from the second exhaust port 620, and the desired state can be achieved.

  18C is a diagram showing a simulation result of the diisopropylaminosilane concentration on the turntable 2, and FIG. 18D is a diagram showing a simulation result of the diisopropylaminosilane concentration below the turntable 2. As shown in FIG. . 9 (c), (d) to FIG. 12 (c), (d), the region where the diisopropylaminosilane concentration is detected to be high is level A, and the region where the diisopropylaminosilane concentration is not detected so much is level B. A region where almost no diisopropylaminosilane concentration was detected is shown as level C.

  As shown in FIG. 18C, it can be seen that on the turntable 2, the diisopropylaminosilane gas is supplied to the first processing region P <b> 1 and is appropriately exhausted from the first exhaust port 610.

  Further, as shown in FIG. 18 (d), the concentration of diisopropylaminosilane gas in the first exhaust port 610 is level B even below the turntable 2, so that it can be seen that there is no problem.

  In this way, the exhaust pressure of the first exhaust port 610 is 7.02 Torr, the exhaust pressure of the second exhaust port 620 is 7 Torr, and a differential pressure of 0.02 Torr is provided under the condition of an exhaust pressure of about 7 Torr. In this case, it was shown that mixing of ozone gas below the turntable 2 into the first exhaust port 610 can be prevented.

  As described above with reference to FIGS. 12 to 14, 16, and 18, the exhaust pressure at the first exhaust port 610 increases as the exhaust pressure at the first and second exhaust ports 610, 620 increases. Even if the differential pressure of the exhaust pressure at the second exhaust port 620 is small, a sufficient effect of independent exhaust of the processing gas can be obtained.

  These pressures are shown to have a correlation with the pressure in the vacuum vessel 1 from the simulation test. Specifically, the pressure-dependent condition of the vacuum vessel 1 is that when the pressure in the vacuum vessel 1 is 1 to 3 Torr, the exhaust pressure of the first exhaust port 610 is less than the exhaust pressure of the second exhaust port 620. The pressure range is set to be higher by 1 to 0.3 Torr, and when the pressure in the vacuum vessel 1 is 3 to 5 Torr, the exhaust pressure of the first exhaust port 610 is 0.05 to 0 than the exhaust pressure of the second exhaust port 620. When the pressure range is set to 1 Torr higher and the pressure in the vacuum chamber 1 is 5 to 10 Torr, the exhaust pressure of the first exhaust port 610 is 0.01 to 0.05 Torr higher than the exhaust pressure of the second exhaust port 620. It is preferable to set the pressure range.

  The exhaust pressures at the first and second exhaust ports 610 and 620 may be set by the control unit 100 controlling the pressure set values of the automatic pressure controllers 651 and 652. The control unit 100 can also control the pressure and temperature in the vacuum vessel 1. Moreover, since the control part 100 can also control the raising / lowering operation | movement of the turntable 2, the substrate processing method which concerns on embodiment of this invention can be performed by control by the control part 100. FIG. The operation of the control unit 100 may be defined by a recipe, and the recipe may be supplied as a computer program recorded in the recording medium 102 and installed in the storage unit 101.

  Next, the substrate processing method according to the first embodiment of the present invention will be described by taking as an example the case where the substrate processing method is used. For this reason, the drawings referred to so far are referred to as appropriate.

  First, a gate valve (not shown) is opened with the turntable 2 lowered, and the wafer W is transferred from the outside into the recess 24 of the turntable 2 via the transfer port 15 (FIG. 3). The lowering of the rotary table 2 may be performed by the control unit 100 controlling the lifting mechanism 17. This delivery is performed by raising and lowering a lifting pin (not shown) from the bottom side of the vacuum vessel 1 through the through hole on the bottom surface of the recess 24 when the recess 24 stops at a position facing the transport port 15. Such delivery of the wafer W is performed by intermittently rotating the turntable 2, and the wafer W is placed in each of the five recesses 24 of the turntable 2. At that time, the wafer W may be warped. However, since the turntable 2 is lowered and a space is formed above, the turntable 2 is moved one after another before waiting for the warpage of the wafer W to converge. A plurality of wafers W are placed on the recess 24 by intermittently rotating. When the placement of the wafer W is completed and the warpage of the wafer W is sufficiently reduced, the control unit 100 controls the elevating mechanism 17 to raise the rotary table 2 and stop it at an appropriate position for performing substrate processing. .

Subsequently, after closing the gate valve and evacuating the vacuum vessel 1 to the lowest ultimate vacuum by the vacuum pump 640, the separation gas nozzles 41 and 42 discharge Ar gas or N ₂ gas as separation gas at a predetermined flow rate to separate the separation gas. Ar gas or N ₂ gas is also discharged from the supply pipe 51 and the purge gas supply pipes 72 and 73 at a predetermined flow rate. Accordingly, the automatic pressure controllers 650 and 651 adjust the inside of the vacuum vessel 1 to a processing pressure set in advance, so that the first exhaust port 610 and the second exhaust port 620 have an appropriate differential pressure. Set the exhaust pressure. As described above, an appropriate pressure difference is set according to the set pressure in the vacuum vessel 1.

  In the case where an adsorptive raw material gas is supplied from the processing gas nozzle 31 and a reactive gas that reacts with a raw material gas such as an oxidizing gas or a nitriding gas is supplied from the processing gas nozzle 32, it is provided corresponding to the processing gas nozzle 31. The exhaust pressure at the first exhaust port 610 is set to be higher than the exhaust pressure at the second exhaust port 620. Since the raw material gas such as Si-containing gas and Ti-containing gas is an adsorptive gas having a heavy mass, it rarely reaches the second exhaust port 620, and the reaction gas such as oxidizing gas or nitriding gas is This is because the mass is light and diffusible, so that the first exhaust port 610 can be sufficiently reached. Needless to say, when the reaction gas is supplied from the processing gas nozzle 31 and the source gas is supplied from the processing gas nozzle 32, the pressure relationship between the first exhaust port 610 and the second exhaust port 620 is reversed. . The pressure dependence conditions are as described above.

  Next, the wafer W is heated to, for example, 400 ° C. by the heater unit 7 while rotating the turntable 2 clockwise, for example, at a rotation speed of 20 rpm.

Thereafter, the Si-containing gas and the O ₃ gas are discharged from the reaction gas nozzles 31 and 32, respectively. Further, if necessary, a mixed gas of Ar gas, O ₂ gas, and H ₂ gas mixed at a predetermined flow rate ratio is supplied from the plasma gas nozzle 92 into the vacuum vessel 1, and the plasma generator 80 is supplied from a high frequency power source. For example, high-frequency power is supplied to the antenna at 700 W. As a result, plasma is generated and the formed film is modified.

Here, while the turntable 2 rotates once, a silicon oxide film is formed on the wafer W as follows. That is, when the wafer W first passes through the first processing region P <b> 1 below the reaction gas nozzle 31, the Si-containing gas is adsorbed on the surface of the wafer W. The Si-containing gas may be, for example, an organic aminosilane gas, and specifically, for example, diisopropylaminosilane. Next, when the wafer W passes through the second processing region P <b> 2 below the reaction gas nozzle 32, the Si-containing gas on the wafer W is oxidized by the O ₃ gas from the reaction gas nozzle 32, and a monomolecular layer of silicon oxide. (Or several molecular layers) are formed. Next, when the wafer W passes under the plasma generator 80, the silicon oxide layer on the wafer W is exposed to active oxygen species and active hydrogen species. Active oxygen species such as oxygen radicals act to detach from the silicon oxide layer by oxidizing, for example, organic substances contained in the Si-containing gas and remaining in the silicon oxide layer. Thereby, the silicon oxide layer can be highly purified.

Here, a communication space in which O ₃ gas can reach the first exhaust port 610 is formed below the turntable 2, but the exhaust pressure of the first exhaust port 610 is changed to the second exhaust port. Since the predetermined pressure is set higher than the exhaust pressure of 620, the O ₃ gas does not reach the first exhaust port 610 but is exhausted from the second exhaust port 620 together with Ar gas or the like. Thereby, an unnecessary silicon oxide film can be prevented from being generated at the first exhaust port 610.

  Note that if the first exhaust port 610 is too high, a phenomenon that the Si-containing gas reaches the second exhaust port 620 may occur, and therefore the first exhaust port 610 and the second exhaust port 610 may be generated. The differential pressure with the exhaust port 620 is set to an appropriate range.

  As a result of the above simulation, when the pressure in the vacuum vessel 1 is 1 to 3 Torr, the exhaust pressure of the first exhaust port 610 is in a pressure range higher by 0.1 to 0.3 Torr than the exhaust pressure of the second exhaust port 620. And the pressure in the vacuum vessel 1 is set to a pressure range in which the exhaust pressure of the first exhaust port 610 is 0.05 to 0.1 Torr higher than the exhaust pressure of the second exhaust port 620 when the pressure in the vacuum vessel 1 is 3 to 5 Torr. When the pressure in the vacuum vessel 1 is 5 to 10 Torr, it is preferable that the exhaust pressure of the first exhaust port 610 is set to a pressure range 0.01 to 0.05 Torr higher than the exhaust pressure of the second exhaust port 620. Explained.

  Further, when the exhaust pressure is around 2 Torr, a differential pressure of about 0.2 Torr, when the exhaust pressure is around 4 Torr, a differential pressure of about 0.75 Torr, and when the exhaust pressure is around 7 Torr, 0. It was also explained that a differential pressure of about 03 Torr is appropriate.

  By setting such an appropriate differential pressure, even if there is a communication space of 10 mm or more below the rotary table 2, the first exhaust port 610 and the second exhaust port 620 are independent from each other. Exhaust can be performed.

Hereinafter, after rotating the turntable 2 as many times as a silicon oxide film having a desired film thickness is formed, a Si-containing gas, an O ₃ gas, and Ar gas, O ₂ gas, and NH supplied as necessary _The substrate processing method is terminated by stopping the supply of the mixed gas of the _three gases. Subsequently, the supply of Ar gas or N ₂ gas from the separation gas nozzles 41 and 42, the separation gas supply pipe 51, and the purge gas supply pipes 72 and 73 is also stopped, and the rotation of the turntable 2 is stopped. Thereafter, the wafer W is unloaded from the vacuum container 1 by a procedure reverse to the procedure performed when the wafer W is loaded into the vacuum container 1.

  As described above, according to the substrate processing method and the substrate processing apparatus according to the first embodiment of the present invention, the oxidizing gas that is the reaction gas is mixed into the first exhaust port 610 that is the exhaust port for the source gas. This can be prevented.

[Second Embodiment]
Next, a substrate processing method and a substrate processing apparatus according to the second embodiment of the present invention will be described.

  FIG. 19 is a diagram showing an example of a substrate processing apparatus according to the second embodiment of the present invention. The substrate processing apparatus according to the second embodiment includes a third processing region P3 and a fourth processing region P4 in addition to the first processing region P1 and the second processing region P2. This is different from the substrate processing apparatus according to the first embodiment. In addition to the addition of the first exhaust port 610 and the second exhaust port 620, the substrate processing apparatus according to the second embodiment adds the third and fourth processing regions P3 and P4. It differs from the substrate processing apparatus according to the first embodiment in that a third exhaust port 611 and a fourth exhaust port 621 are added.

  The third processing region P3 is a region for supplying a raw material gas such as a silicon-containing gas to the wafer W, similarly to the first processing region P1. The fourth processing region P4 is a reactive gas supply region that supplies a reactive gas that can react with the source gas and generate a reaction product to the wafer W, similarly to the second processing region P2. The third processing region P3 and the fourth processing region P4 are arranged apart from each other from the upstream side along the rotation direction of the turntable 2, and the first processing region P1 and the second processing region P2 are arranged. Have the same relationship. Further, between the second processing region P2 and the third processing region P3, between the third processing region P3 and the fourth processing region P4, and between the fourth processing region P4 and the first processing region P1. The separation regions D are arranged between the two.

  As shown in FIG. 19, the third processing region P3 is provided with a third processing gas nozzle 310 for supplying a source gas to the wafer W, and the fourth processing region P4 has a wafer. A fourth process gas nozzle 320 for supplying a reaction gas to W is provided. Further, similarly to the separation gas nozzles 41 and 42, separation gas nozzles 410 and 420 are also provided in each newly provided separation region D.

  With this configuration, the source gas adsorbed on the wafer W in the first processing region P1 reacts with the reaction gas in the second processing region P2 to generate a reaction product, and then in the third processing region P3. The source gas is adsorbed on the wafer W (or on the film made of the reaction product) and reacts with the reaction gas in the fourth processing region P4 to generate a reaction product. Then, the process from the first processing area P1 is repeated. As described above, in the substrate processing apparatus according to the second embodiment, the ALD process is performed twice on the wafer W while the turntable 2 rotates once, so that the substrate processing speed can be improved. it can. For example, the deposition rate can be improved by a film forming process.

  In order to form such four processing areas P1 to P4 along the circumferential direction of the turntable 2, it is necessary to arrange the four processing areas P1 to P4 with appropriate sizes (angles). For example, in the substrate processing apparatus according to the first embodiment, the transfer unit including the transfer port 15 is 72 °, the separation region D is 60 ° × 2, the first processing region (source gas supply region) P1 is 60 °, Assume that the second processing region P2 is set to 67.5 °. In the substrate processing apparatus according to the second embodiment, since each region needs to be narrowed, for example, the transport unit including the transport port 15 secures 72 ° as in the first embodiment, but the separation region D 20 ° × 4, the first and third processing regions (source gas supply regions) P1, P3 are 52 ° × 2, the second and fourth processing regions (reaction gas supply regions) P2, P4 are 52 ° × It is necessary to set the individual areas such as 2 slightly narrowed.

  Since both the first and third processing regions P1 and P3 are regions for supplying the source gas to the wafer W, the first processing region P1 is changed to the first source gas supply region P1 and the third processing region. P3 may be referred to as a second source gas supply region P3. Similarly, since both the second and fourth processing regions P2 and P4 are regions for supplying reaction gas to the wafer W, the second processing region P2 is used as the first reaction gas supply region P2 and the fourth processing. The region P4 may be referred to as a second reactive gas supply region P4. Further, when the reactive gas is supplied while performing plasma processing in the second and fourth processing regions P2, P4, the first and second plasma processing are performed in the second and fourth processing regions P2, P4. They may be referred to as areas P2 and P4.

  The exhaust ports 610, 611, 620, 621 are provided corresponding to the first and second source gas supply regions P 1, P 3, and the first and second reaction gas supply regions P 2, P 4, respectively. The source gas supplied in the first processing region P1, the reactive gas supplied in the second processing region P2 at the exhaust port 620, the source gas supplied in the third processing region P3 at the exhaust port 611, and the exhaust port 621 Then, the point which is comprised so that the reactive gas supplied by the 4th process area | region P4 may be exhausted separately is the same as that of the substrate processing apparatus which concerns on 1st Embodiment.

  However, also in the second substrate processing apparatus, the turntable 2 is configured to be movable up and down. When the wafer W is loaded into the processing chamber 1, the turntable 2 is lowered, and the warp of the wafer W is caused. And the rising operation is performed at the stage of starting the substrate processing. Therefore, when the substrate processing is performed, a gap is formed below the rotary table 2, and the first to fourth exhaust ports 610, 611, 620, and 621 communicate with each other, for example, at the second exhaust port 620. The reaction gas to be exhausted may be mixed into the first exhaust port 610 from which the source gas is to be exhausted.

  Also in the substrate processing method and the substrate processing apparatus according to the second embodiment, by adjusting the pressures of the first to fourth exhaust ports 610, 611, 620, and 621, substrate processing that does not cause such mixing is performed. Do. Hereinafter, the substrate processing method and the substrate processing apparatus according to the second embodiment will be described using the results of simulation experiments.

FIG. 20 is a diagram showing a result of the first simulation experiment of the substrate processing method according to the second embodiment of the present invention. In the first simulation experiment, the pressures of the first to fourth exhaust ports 610, 611, 620, and 621 were all set to 2 Torr. Further, as other process conditions, the temperature of the wafer W was set to 400 ° C., and the rotation speed of the turntable 2 was set to 20 rpm. DCS (dichlorosilane, Si ₂ Cl ₂ ) was used as the source gas, NH ₃ was used as the reaction gas, and a SiN film was formed. In the second and fourth processing regions P2 and P4, the plasma processing is performed. Ar gas was supplied at 3 slm from the separation gas supply pipe 51 above the rotating shaft, and 5 slm × 4 Ar gas was supplied from the separation gas nozzles 41 and 42 (four because they are provided in all the separation regions D). The flow rate of DCS, which is a raw material gas, was 0.5 slm × 2, and the flow rate of NH ₃ , which is a reactive gas, was 5 slm × 2.

  FIG. 20A is a diagram showing a simulation result of the DCS concentration distribution above the turntable 2. As in the first embodiment, the highest density level is level A, the middle density level is level B, and the lowest negligible level is level C, as in the first embodiment. Further, the arrangement of the processing regions P1 to P4 in the vacuum vessel 1 is the same as the arrangement shown in FIG. This also applies to the subsequent simulation results, and this description will not be repeated thereafter.

  As shown in FIG. 20A, the range of DCS levels A and B, which are the source gas, is within the first and third processing regions P1 and P3 above the turntable 2, and the source gas It has been shown that the gas separation is done properly.

FIG. 20B is a diagram showing a simulation result of the concentration distribution of NH ₃ plasma above the turntable 2. As shown in FIG. 20 (b), the range of levels A and B is within the second and fourth processing regions P2 and P4, and the reaction gas is appropriately separated above the turntable 2. It is shown that it is done.

  FIG. 20C is a diagram showing a simulation result of the DCS concentration distribution below the turntable 2. As shown in FIG. 20 (c), the regions of DCS concentration levels A and B are contained in the first and third processing regions P1 and P3. Separation has been shown to be done properly.

FIG. 20 (d) is a diagram showing a simulation result of the concentration distribution of NH ₃ plasma below the rotary table 2. As shown in FIG. 20D, the range of level B reaches the vicinity of the first exhaust port 610 in the first processing region P1. This indicates that the influence of the reaction gas reaches the exhaust port 610 of the raw material gas supply region P1, and it can be seen that the reaction gas is not sufficiently separated and the reaction gas is mixed.

Figure 20 (e) is a diagram showing simulation results of the NH ₃ plasma density distribution of the lower rotary table 2 at the time of setting the concentration of the NH ₃ plasma to 10% of the maximum value. As shown in FIG. 20 (e), the level A range reaches the first exhaust port 610 of the first processing region P1, and the reaction gas is clearly mixed into the first exhaust port 610. It is shown.

  As described above, when the pressures of the first to fourth exhaust ports 610, 611, 620, and 621 are all equal to 2 Torr, the reaction gas is mixed into the first exhaust port 610 below the rotary table 2. It has been shown that such a substrate processing method cannot be adopted.

  FIG. 21 is a diagram showing a result of a second simulation experiment of the substrate processing method according to the second embodiment of the present invention. In the second simulation experiment, the pressure of the first exhaust port 610 was set to 2.027 Torr, and the pressures of the second to fourth exhaust ports 611, 620, and 621 were all set to 2 Torr. Other conditions were the same as those in the first simulation experiment.

  FIG. 21A is a diagram showing a simulation result of the DCS concentration distribution above the turntable 2. As shown in FIG. 21 (a), the range of the concentration levels A and B of the DCS that is the source gas is within the first and third processing regions P1 and P3 above the turntable 2, It is shown that the separation of the raw material gas is properly performed.

FIG. 21B is a diagram showing a simulation result of the concentration distribution of NH ₃ plasma above the turntable 2. As shown in FIG. 21B, the concentration levels A and B are within the second and fourth processing regions P2 and P4, and the reaction gas is appropriately separated above the turntable 2. It is shown that it is done.

  FIG. 21C is a diagram showing a simulation result of the DCS concentration distribution below the turntable 2. As shown in FIG. 21 (c), the regions of DCS concentration levels A and B are contained in the first and third processing regions P 1 and P 3. Separation has been shown to be done properly.

FIG. 21 (d) is a diagram showing a simulation result of the concentration distribution of NH ₃ plasma below the rotary table 2. As shown in FIG. 21D, the range of the concentration level B is within the range of the second and fourth processing regions P2 and P4, and the reaction gas in the second processing region P2 is also the first. The first exhaust port 610 of the processing region P1 is not reached. This indicates that the reaction gas is properly separated even below the rotary table 2.

Figure 21 (e) is a diagram showing an NH ₃ simulation of the plasma density distribution of the results of the lower rotary table 2 at the time of setting the concentration of the NH ₃ plasma to 10% of the maximum value. As shown in FIG. 21 (e), even if the plasma concentration is set to 10% of the maximum value, the concentration levels A and B in the second processing region P2 are within the range of the first exhaust in the first processing region P1. The mouth 610 has not been reached. Thus, by setting the conditions of the second simulation experiment, that is, the pressure of the first exhaust port 610 slightly higher than the other second to fourth exhaust ports 611, 620, 621, the reaction gas It has been shown that mixing into the first exhaust port 610 can be reliably prevented.

  FIG. 22 is a diagram showing a result of a third simulation experiment of the substrate processing method according to the second embodiment of the present invention. In the third simulation experiment, the pressures of the first to fourth exhaust ports 610, 611, 620, and 621 were all set to 4 Torr. The pressure in the vacuum vessel 1 was set to 4 Torr. Conditions other than the pressure at the exhaust port and the pressure in the vacuum vessel 1 were the same as those in the first and second simulation experiments.

  FIG. 22A is a diagram showing a simulation result of the DCS concentration distribution above the turntable 2. As shown in FIG. 22 (a), the range of the concentration levels A and B of the DCS that is the source gas is within the first and third processing regions P1 and P3 above the turntable 2, It is shown that the separation of the raw material gas is properly performed.

FIG. 22B is a diagram showing a simulation result of the concentration distribution of NH ₃ plasma above the rotary table 2. As shown in FIG. 22B, the concentration levels A and B are within the second and fourth processing regions P2 and P4, and the reaction gas is appropriately separated above the turntable 2. It is shown that it is done.

  FIG. 22C is a diagram showing a simulation result of the DCS concentration distribution below the turntable 2. As shown in FIG. 22 (c), the regions of DCS concentration levels A and B are contained in the first and third processing regions P1 and P3. Separation has been shown to be done properly.

FIG. 22 (d) is a diagram showing a simulation result of the concentration distribution of NH ₃ plasma below the rotary table 2. As shown in FIG. 22D, the range of level B reaches the vicinity of the first exhaust port 610 in the first processing region P1. This indicates that the influence of the reaction gas extends to the vicinity of the exhaust port 610 of the raw material gas supply region P1, and the reaction gas may not be sufficiently separated, and there is a possibility that the reaction gas may be mixed. I understand.

Figure 22 (e) is a diagram showing simulation results of the NH ₃ plasma density distribution of the lower rotary table 2 at the time of setting the concentration of the NH ₃ plasma to 10% of the maximum value. As shown in FIG. 22E, the level A range reaches the first exhaust port 610 of the first processing region P1, and mixing of the reaction gas into the first exhaust port 610 is indicated. ing.

  As described above, when the pressures of the first to fourth exhaust ports 610, 611, 620, and 621 are all equal to 4 Torr, the first concentration of the reaction gas below the turntable 2 is maximized when the plasma concentration is maximized. It can be seen that the substrate processing method cannot be adopted because of the mixing of the gas into the exhaust port 610.

  FIG. 23 is a diagram showing a result of the fourth simulation experiment of the substrate processing method according to the second embodiment of the present invention. In the fourth simulation experiment, the pressure of the first exhaust port 610 was set to 4.01 Torr, and the pressures of the second to fourth exhaust ports 611, 620, and 621 were all set to 4 Torr. The conditions other than the pressure at the exhaust port were the same as those in the third simulation experiment.

  FIG. 23A is a diagram showing a simulation result of the DCS concentration distribution above the turntable 2. As shown in FIG. 23 (a), the range of the concentration levels A and B of the DCS that is the source gas is within the first and third processing regions P1 and P3 above the turntable 2, It is shown that the separation of the raw material gas is properly performed.

FIG. 23B is a diagram showing a simulation result of the concentration distribution of the NH ₃ plasma above the turntable 2. As shown in FIG. 23B, the concentration levels A and B are within the second and fourth processing regions P2 and P4, and the reaction gas is appropriately separated above the turntable 2. It is shown that it is done.

  FIG. 23C is a diagram showing a simulation result of the DCS concentration distribution below the turntable 2. As shown in FIG. 23 (c), the regions of DCS concentration levels A and B are contained in the first and third processing regions P1 and P3. Separation has been shown to be done properly.

FIG. 23 (d) is a diagram showing a simulation result of the concentration distribution of NH ₃ plasma below the rotary table 2. As shown in FIG. 23 (d), the range of the concentration levels A and B is within the range of the second and fourth processing regions P2 and P4, and the reaction gas in the second processing region P2 is also It does not reach the first exhaust port 610 in the first processing region P1. This indicates that the reaction gas is properly separated even below the rotary table 2.

Figure 23 (e) is a diagram showing simulation results of the NH ₃ plasma density distribution of the lower rotary table 2 at the time of setting the concentration of the NH ₃ plasma to 10% of the maximum value. As shown in FIG. 23 (e), even if the plasma concentration is 10% of the maximum value, the concentration levels A and B in the second processing region P2 are within the first exhaust region of the first processing region P1. The mouth 610 has not been reached. Thus, by setting the conditions of the second simulation experiment, that is, the pressure of the first exhaust port 610 slightly higher than the other second to fourth exhaust ports 611, 620, 621, the reaction gas It has been shown that mixing into the first exhaust port 610 can be reliably prevented.

  FIG. 24 is a diagram showing a result of a fifth simulation experiment of the substrate processing method according to the second embodiment of the present invention. In the fifth simulation experiment, the pressure of the first exhaust port 610 was set to 4.015 Torr, and the pressures of the second to fourth exhaust ports 611, 620, and 621 were all set to 4 Torr. The conditions other than the pressure at the first exhaust port 610 were the same as those in the fourth simulation experiment.

  FIG. 24A is a diagram showing a simulation result of the DCS concentration distribution above the turntable 2. As shown in FIG. 24 (a), the range of the concentration levels A and B of the DCS that is the source gas is within the first and third processing regions P1 and P3 above the turntable 2, It is shown that the separation of the raw material gas is properly performed.

FIG. 24B is a diagram showing a simulation result of the concentration distribution of NH ₃ plasma above the turntable 2. As shown in FIG. 24B, the range of the concentration levels A and B is within the second and fourth processing regions P2 and P4, and the reaction gas is appropriately separated above the turntable 2. It is shown that it is done.

  FIG. 24C is a diagram showing a simulation result of the DCS concentration distribution below the turntable 2. As shown in FIG. 24C, the regions of the DCS concentration levels A and B are contained in the first and third processing regions P1 and P3. Separation has been shown to be done properly.

FIG. 24 (d) is a diagram showing a simulation result of the concentration distribution of NH ₃ plasma below the rotary table 2. As shown in FIG. 24D, the concentration levels A and B are within the second and fourth processing regions P2 and P4, and the reaction gas in the second processing region P2 is also It does not reach the first exhaust port 610 in the first processing region P1. This indicates that the reaction gas is properly separated even below the rotary table 2.

Figure 24 (e) is a diagram showing simulation results of the NH ₃ plasma density distribution of the lower rotary table 2 at the time of setting the concentration of the NH ₃ plasma to 10% of the maximum value. As shown in FIG. 24 (e), even if the plasma concentration is set to 10% of the maximum value, the concentration levels A and B in the second processing region P2 are within the range of the first exhaust in the first processing region P1. The mouth 610 has not been reached. In addition, the range of the concentration levels A and B is further smaller than the result of the fourth simulation experiment, and is further away from the first exhaust port 610. Therefore, in the fifth simulation experiment, that is, when the pressure of the first exhaust port 610 is set to 4.015 Torr that is slightly 0.005 Torr higher than 4.01 Torr, the first exhaust port 610 of the reaction gas is more surely obtained. It was shown that it can prevent contamination. Thus, by changing the pressure of the first exhaust port 610 slightly, it is possible to find a more optimal condition for preventing the reaction gas from being mixed into the first exhaust port 610.

  FIG. 25 is a diagram showing a result of a sixth simulation experiment of the substrate processing method according to the second embodiment of the present invention. In the sixth simulation experiment, the pressures of the first to fourth exhaust ports 610, 611, 620, and 621 were all set to 6 Torr. Moreover, the pressure in the vacuum vessel 1 was set to 6 Torr. Conditions other than the pressure at the exhaust port and the pressure in the vacuum vessel 1 were the same as those in the first to fifth simulation experiments.

  FIG. 25A is a diagram showing a simulation result of the DCS concentration distribution above the rotary table 2. As shown in FIG. 25A, the range of the concentration levels A and B of the DCS that is the source gas is within the first and third processing regions P1 and P3 above the turntable 2, It is shown that the separation of the raw material gas is properly performed.

FIG. 25B is a diagram showing a simulation result of the concentration distribution of NH ₃ plasma above the turntable 2. As shown in FIG. 25B, the concentration levels A and B are within the second and fourth processing regions P2 and P4, and the reaction gas is appropriately separated above the turntable 2. It is shown that it is done.

  FIG. 25C is a diagram showing a simulation result of the DCS concentration distribution below the turntable 2. As shown in FIG. 25 (c), the regions of DCS concentration levels A and B are contained in the first and third processing regions P 1 and P 3. Separation has been shown to be done properly.

FIG. 25 (d) is a diagram showing a simulation result of the concentration distribution of NH ₃ plasma below the rotary table 2. As shown in FIG. 25D, the level B range extends toward the first exhaust port 610 in the first processing region P1, but does not reach the vicinity of the first exhaust port 610. . It is shown that the reaction gas is separated to a satisfactory level even below the rotary table 2.

Figure 25 (e) is a diagram showing simulation results of the NH ₃ plasma density distribution of the lower rotary table 2 at the time of setting the concentration of the NH ₃ plasma to 10% of the maximum value. As shown in FIG. 25 (e), the range of level B reaches the first exhaust port 610 of the first processing region P1, and the mixing of the reaction gas into the first exhaust port 610 is indicated. ing.

  As described above, when the pressures of the first to fourth exhaust ports 610, 611, 620, and 621 are all set equal to 6 Torr, the first concentration of the reaction gas below the turntable 2 is maximized when the plasma concentration is maximized. It can be seen that the substrate processing method cannot be adopted because of the mixing of the gas into the exhaust port 610.

  FIG. 26 is a diagram showing a result of a seventh simulation experiment of the substrate processing method according to the second embodiment of the present invention. In the seventh simulation experiment, the pressure of the first exhaust port 610 was set to 6.01 Torr, and the pressures of the second to fourth exhaust ports 611, 620, and 621 were all set to 6 Torr. The conditions other than the pressure at the first exhaust port 610 were the same as those in the sixth simulation experiment.

  FIG. 26A is a diagram showing a simulation result of the DCS concentration distribution above the turntable 2. As shown in FIG. 26 (a), the range of the concentration levels A and B of the DCS that is the raw material gas is within the first and third processing regions P1 and P3 above the turntable 2, It is shown that the separation of the raw material gas is properly performed.

FIG. 26B is a diagram showing a simulation result of the concentration distribution of NH ₃ plasma above the turntable 2. As shown in FIG. 26B, the concentration levels A and B are within the second and fourth processing regions P2 and P4, and the reaction gas is appropriately separated above the turntable 2. It is shown that it is done.

  FIG. 26 (c) is a diagram showing a simulation result of the DCS concentration distribution below the turntable 2. As shown in FIG. 26 (c), the regions of DCS concentration levels A and B are contained in the first and third processing regions P1 and P3. Separation has been shown to be done properly.

FIG. 26 (d) is a diagram showing a simulation result of the concentration distribution of NH ₃ plasma below the rotary table 2. As shown in FIG. 26 (d), the range of the concentration levels A and B is within the range of the second and fourth processing regions P2 and P4, and the reaction gas in the second processing region P2 is also It does not reach the first exhaust port 610 in the first processing region P1. This indicates that the reaction gas is properly separated even below the rotary table 2.

FIG. 26E is a diagram showing a simulation result of the NH ₃ plasma concentration distribution below the turntable 2 when the NH ₃ plasma concentration is set to 10% of the maximum value. As shown in FIG. 26 (e), even if the plasma concentration is 10% of the maximum value, the concentration levels A and B in the second processing region P2 are in the first exhaust region of the first processing region P1. The mouth 610 has not been reached. In addition, the range of the density levels A and B is reduced to the same level as the result of the fifth simulation experiment. Thus, by setting the conditions of the second simulation experiment, that is, the pressure of the first exhaust port 610 slightly higher than the other second to fourth exhaust ports 611, 620, 621, the reaction gas It has been shown that mixing into the first exhaust port 610 can be reliably prevented.

  In addition, it is preferable that the conditions of the pressure in the vacuum vessel 1 and the pressure of the 1st exhaust port 610 adjacent to the 2nd process area | region P2 are as follows.

  When the pressure in the vacuum vessel 1 is 1 to 3 Torr, the exhaust pressure of the first exhaust port 610 corresponding to the first processing region P1 is the other second to fourth exhaust ports 611, 620, 621. It is preferable to set the pressure higher by 0.015 to 0.06 Torr than the exhaust pressure or to flow a ballast having an equivalent pressure.

  When the pressure in the vacuum vessel 1 is 3 to 5 Torr, the exhaust pressure of the first exhaust port 610 corresponding to the first processing region P1 is the other second to fourth exhaust ports 611 and 620. It is preferable that the pressure be 0.01 to 0.03 Torr higher than the exhaust pressure of 621, or a ballast that is equivalent pressure to flow.

  Furthermore, when the pressure in the vacuum vessel 1 is 5 to 10 Torr, the exhaust pressure of the first exhaust port 610 corresponding to the first processing region P1 is the other second to fourth exhaust ports 611 and 620. It is preferable that the pressure be 0.005 to 0.015 Torr higher than the exhaust pressure of 621, or a ballast having an equivalent pressure to flow.

  Such conditions are consistent with the results of the first to seventh simulation experiments.

  As described above, even when the number of the processing regions P1 to P4 increases to four, the exhaust pressure of the first exhaust port 610 is changed to the other second to fourth exhaust ports 611, 620, 621. By setting the pressure slightly higher than the exhaust pressure, it is possible to prevent the reaction gas from being mixed into the first exhaust port 610. Note that the third and fourth exhaust ports 611 and 621 are relatively narrow in the third processing region P3 and the fourth processing region P4 and are separated from the exhaust ports of the other processing regions P1 and P2, so that The exhaust ports 611 and 621 in the regions P3 and P4 become the exhaust ports 611 and 612 closest to the processing regions P3 and P4. In such a case, there is no particular problem. Therefore, there is no need to make complicated settings in which the exhaust pressures of the third and fourth exhaust ports 611 and 621 are changed, and the second reaction gas nozzle 32 corresponds to the second reaction gas nozzle 32. It is sufficient to perform the differential pressure control only on the first exhaust port 610 that is closer to the second exhaust port 620.

  In the second embodiment, the example in which the processing area is increased to four has been described. However, even when the processing area is further increased to six, eight, etc., it is more than the exhaust port in the processing area. If the above-mentioned differential pressure control is applied only to the location where the exhaust port of the adjacent processing region is close, it is possible to sufficiently prevent the reaction gas from being mixed into the exhaust port of the other processing region.

  In the present embodiment, an example in which a silicon-containing gas is used as the source gas and an oxidizing gas is used as the reaction gas has been described. However, the source gas and the reaction gas may be combined in various combinations. For example, a silicon-containing film may be formed using a silicon-containing gas as a source gas and a nitriding gas such as ammonia as a reaction gas. Alternatively, a titanium nitride film may be formed by using a source gas as a titanium-containing gas and a reactive gas as a nitriding gas. As described above, the source gas can be selected from various gases such as an organometallic gas, and the reaction gas can also react with the source gas such as an oxidizing gas and a nitriding gas to generate a reaction product. Can be used.

  Further, in the present embodiment, the example of performing the film forming process has been described as the substrate processing, but the substrate processing has a plurality of exhaust ports and independently exhausts the processing gas corresponding to each processing region. Any apparatus can be applied to a substrate processing apparatus other than the film forming apparatus.

  The preferred embodiments and examples of the present invention have been described in detail above. However, the present invention is not limited to the above-described embodiments and examples, and the above-described embodiments and examples can be made without departing from the scope of the present invention. Various modifications and substitutions can be made to the embodiments.

DESCRIPTION OF SYMBOLS 1 Vacuum container 2 Rotary table 11 Top plate 12 Container body 15 Transfer port 16 Bellows 17 Lifting mechanism 22 Rotating shaft 24 Recess 31, 32, 310, 320 Process gas nozzle 41, 42, 410, 420 Separation gas nozzle 44, 45 Ceiling surface 80 Plasma Generator 610, 611, 620, 621 Exhaust port 630, 631 Exhaust pipe 640, 641 Vacuum pump 650, 651 Automatic pressure controller

Claims (18)

A first processing gas supply region, a first exhaust port provided for exhausting the first processing gas supplied to the first processing gas supply region, a second processing gas supply region, Communication that connects the second exhaust port provided to exhaust the second process gas supplied to the second process gas supply region, and the first exhaust port and the second exhaust port. A substrate processing method using a processing chamber having a space,
The communication space is a space below the turntable on which the substrate can be placed on the upper surface,
The first and second exhaust ports are provided below the communication space,
The first processing gas supply region and the second processing gas supply region are separated above the rotary table by a separation region protruding downward from the ceiling surface of the processing chamber. The second processing gas is mixed into the gas supply region and the first processing gas is not mixed into the second processing gas supply region.
The exhaust from the first exhaust port and the second exhaust port, the supply of the first process gas to the first process gas supply region, and the second to the second process gas supply region Rotating the rotary table while supplying the processing gas of
The exhaust pressure at the first exhaust port is set higher than the exhaust pressure at the second exhaust port by a predetermined pressure within a predetermined pressure range, thereby preventing the second processing gas from being mixed into the first exhaust port. A substrate processing method for performing substrate processing. The substrate processing method according to claim 1 , wherein the predetermined pressure range is a pressure range that does not cause the first processing gas to be mixed into the second exhaust port. A purge gas is supplied from the separation region, only the first processing gas and the purge gas are exhausted from the first exhaust port, and only the second processing gas and the purge gas are exhausted from the second exhaust port. The substrate processing method according to claim 1, wherein the substrate is exhausted. The first exhaust port is a downstream end of the first processing gas supply region in the rotation direction of the rotary table, and the second exhaust port is a rotation end of the rotation table of the second processing gas supply region in the rotation direction. The second processing gas supply region is provided at each downstream end, and the second processing gas supply region is longer in the rotation direction than the first processing gas supply region, and supplies the second processing gas to the second processing gas supply region. second processing gas supply nozzle, a substrate processing method according to any one of claims 1 to 3 close to the first exhaust port than the second outlet. The substrate processing method according to claim 4 , wherein the substrate processing is an ALD film forming processing. The first process gas is a source gas;
The substrate processing method according to claim 5 , wherein the second processing gas is a reaction gas capable of generating a reaction product by reacting with the source gas. The substrate processing method according to claim 6 , wherein the predetermined pressure range is different depending on a pressure in the processing chamber. The substrate processing method according to claim 7 , wherein the predetermined pressure range is set to a smaller pressure range as the pressure in the processing chamber is higher. When the pressure in the processing chamber is 1 to 3 Torr, the predetermined pressure range is set to 0.1 to 0.3 Torr,
When the pressure in the processing chamber is 3 to 5 Torr, the predetermined pressure range is set to 0.05 to 0.1 Torr,
The substrate processing method according to claim 8 , wherein when the pressure in the processing chamber is 5 to 10 Torr, the predetermined pressure range is set to 0.01 to 0.05 Torr. The rotary table is vertically movable, wherein the substrate in a state where the rotary table is lowered is mounted, any one of claims 1 to 9 wherein the substrate processing is performed in a state in which raised the turntable The substrate processing method as described in 2. above. The temperature in the treatment chamber, the substrate processing method according to any one of claims 1 to 10 is set to at least 400 ° C.. A processing chamber;
A rotary table provided in the processing chamber and capable of placing a substrate on the surface and capable of moving up and down;
First and second process gas supply regions provided apart from each other above the turntable along the circumferential direction of the turntable;
First and second exhaust ports provided below the rotary table corresponding to the first and second processing gas supply regions, respectively.
First and second pressure regulating valves for regulating the exhaust pressure of the first and second exhaust ports;
The first processing gas supply region protrudes downward from the ceiling surface of the processing chamber and separates the first processing gas supply region and the second processing gas supply region above the turntable. A separation region provided between the second processing gas supply region;
When the substrate is placed on the turntable, the turntable is lowered, and when the substrate processing is performed by rotating the turntable, the turntable is raised and the turntable is raised. In order to prevent the second processing gas from being exhausted from the first exhaust port through a communication space where the first exhaust port and the second exhaust port communicate with each other, the exhaust of the first exhaust port And a control means for controlling the first and second pressure regulating valves so that the pressure becomes a predetermined pressure higher than the exhaust pressure at the second exhaust port. The control means also controls the pressure in the processing chamber,
The substrate processing apparatus according to claim 12 , wherein the predetermined pressure is changed according to a pressure in the processing chamber. A turntable capable of placing a substrate on the top surface;
A first source gas supply region for supplying source gas to the substrate, which is disposed above the turntable and spaced apart from each other in the rotation direction, and can react with the source gas to generate a reaction product. A first reaction gas supply region for supplying a reaction gas; a second source gas supply region for supplying the source gas; a second reaction gas supply region for supplying the reaction gas;
A first exhaust port provided for exhausting the source gas supplied to the first source gas supply region; and exhausting the reaction gas supplied to the first reaction gas supply region. A second exhaust port provided, a third exhaust port provided for exhausting the source gas supplied to the second source gas supply region, and a supply to the second reaction gas supply region A fourth exhaust port provided for exhausting the reaction gas to be exhausted;
A substrate processing method using a processing chamber having a communication space that communicates the first to fourth exhaust ports,
Substrate processing is performed by setting the exhaust pressure of the first exhaust port to a predetermined pressure higher than the exhaust pressure of the second to fourth exhaust ports to prevent the reaction gas from being mixed into the first exhaust port. Substrate processing method. The communication space is a space below the rotary table,
The first to fourth exhaust ports are provided below the communication space,
The first raw material gas supply region, the first reactive gas supply region, the second raw material gas supply region, and the second reactive gas supply region are above the turntable, and are above the ceiling of the processing chamber. The reaction gas is separated by a separation region protruding downward from the surface, and the reaction gas is mixed into the first and second source gas supply regions and the source gas is introduced into the first and second reaction gas supply regions. Constructed to prevent contamination,
Exhaust from the first to fourth exhaust ports, supply of the source gas to the first and second source gas supply regions, and supply of the reaction gas to the first and second reaction gas supply regions The substrate processing method according to claim 14 , wherein the substrate processing is performed by rotating the turntable while supplying. Wherein the predetermined pressure is a substrate processing method according to claim 14 or 15 is within a predetermined pressure range. When the pressure in the processing chamber is 1 to 3 Torr, the predetermined pressure range is set to 0.015 to 0.06 Torr,
When the pressure in the processing chamber is 3 to 5 Torr, the predetermined pressure range is set to 0.01 to 0.03 Torr,
The substrate processing method according to claim 16 , wherein when the pressure in the processing chamber is 5 to 10 Torr, the predetermined pressure range is set to 0.005 to 0.015 Torr. A processing chamber;
A rotary table provided in the processing chamber and capable of placing a substrate on the surface and capable of moving up and down;
A first raw material gas supply region for supplying a raw material gas to the turntable and spaced from each other above the turntable along the rotation direction of the turntable, and a reaction product that reacts with the raw material gas A first reaction gas supply region for supplying a reaction gas capable of generating a reaction gas; a second source gas supply region for supplying the source gas; a second reaction gas supply region for supplying the reaction gas;
The first source gas supply region, the first reaction gas supply region, the second source gas supply region, and the second reaction gas supply region are respectively provided below the turntable so as to correspond to the first source gas supply region, the first reaction gas supply region, the second source gas supply region, and the second reaction gas supply region. 1 to 4 exhaust ports;
First to fourth pressure regulating valves for regulating the exhaust pressure of the first to fourth exhaust ports;
Projecting downward from the ceiling surface of the processing chamber, the first source gas supply region, the first reaction gas supply region, the second source gas supply region, and the second source above the turntable Between the first source gas supply region, the first reaction gas supply region, the second source gas supply region, and the second reaction gas supply region so as to separate the reaction gas supply regions. A separation region provided; and
When the substrate is placed on the turntable, the turntable is lowered, and when the substrate processing is performed by rotating the turntable, the turntable is raised and the turntable is raised. In order to prevent the reaction gas from being exhausted from the first exhaust port through the communication space where the first to fourth exhaust ports communicate with each other, the exhaust pressure of the first exhaust port is set to the second to And a control means for controlling the first to fourth pressure regulating valves so as to be higher than the exhaust pressure at the fourth exhaust port by a predetermined pressure.