JP5093162B2 - Film forming apparatus, film forming method, and storage medium - Google Patents

Description

  The present invention provides a film forming apparatus in which a plurality of reaction gases that react with each other are sequentially supplied to the surface of a substrate in a vacuum vessel and a thin film is formed by laminating reaction product layers by executing this supply cycle. The present invention relates to a film forming method and a storage medium storing the film forming method.

  As a film forming method in a semiconductor manufacturing process, there is a method of forming a thin film by sequentially supplying at least two kinds of reaction gases in a vacuum atmosphere to the surface of a substrate such as a semiconductor wafer (hereinafter referred to as “wafer”). Are known. Specifically, in this method, for example, after the first reaction gas is adsorbed on the surface of the wafer, the supplied gas is switched to the second reaction gas, and one layer or a plurality of layers are generated by the reaction of both gases on the wafer surface. In this process, atomic layers and molecular layers are formed, and this cycle is performed a plurality of times, for example, several hundred times, thereby laminating these layers and forming a thin film on the wafer. This process is called, for example, ALD (Atomic Layer Deposition) or MLD (Molecular Layer Deposition). The film thickness can be controlled with high accuracy according to the number of cycles, and the in-plane uniformity of the film quality is also good. This is an effective technique that can cope with the thinning of semiconductor devices.

As an example in which such a film forming method is suitable, for example, film formation of a high dielectric film used for a gate oxide film can be given. For example, in the case of forming a silicon oxide film (SiO2 film), for example, a binary butylaminosilane (hereinafter referred to as “BTBAS”) gas or the like is used as the first reaction gas (raw material gas). As the reaction gas (oxidation gas), ozone gas or the like is used.
In carrying out this film forming method, for example, apparatuses described in Patent Documents 1 to 8 are known. Briefly describing these apparatuses, a vacuum chamber is provided in a vacuum container of the apparatus for mounting a plurality of wafers side by side in a circumferential direction (rotation direction) and facing the mounting table. A plurality of gas supply units are provided at the top of the container and supply a processing gas (reaction gas) to the wafer.

  Then, the wafer is mounted on the mounting table, the inside of the vacuum vessel is depressurized to a predetermined processing pressure, the wafer is heated, and the mounting table and the gas supply unit are relatively rotated about the vertical axis. . Further, for example, the first reaction gas and the second reaction gas described above are supplied from the plurality of gas supply units to the surface of the wafer, respectively, and a physical partition wall is provided between the gas supply units supplying the reaction gas. By providing or blowing an inert gas as an air curtain, the processing region formed by the first reaction gas and the processing region formed by the second reaction gas are partitioned in the vacuum vessel.

  As described above, a plurality of types of reaction gases are simultaneously supplied into a common vacuum vessel, but each processing region is partitioned so that these reaction gases do not mix on the wafer. When viewed from the wafer, for example, the first reaction gas and the second reaction gas are sequentially supplied via the partition walls and the air curtain. For this reason, for example, it is not necessary to replace the atmosphere in the vacuum container every time the type of reaction gas supplied into the vacuum container is switched, and the reaction gas supplied to the wafer can be switched at high speed. The film forming process can be performed quickly.

  On the other hand, for example, with the miniaturization and multilayering of wiring of a semiconductor device, it is considered that a technique for further increasing the in-plane uniformity of the film thickness is required in such a film forming device. As a technique for increasing the in-plane uniformity of the film thickness, for example, there is a technique for making the flow of the reaction gas uniform in the vacuum container, but in the vacuum container of this apparatus, for example, there is a recess for holding a wafer. There are cases where the mounting table is provided, or irregularities such as a wafer transfer port are formed on the inner wall of the gas supply unit or the vacuum vessel. Therefore, for example, the flow of the reaction gas is easily disturbed by these recesses and the gas supply unit in the vacuum vessel, and it is difficult to make the reaction gas flow uniform.

  In Patent Document 9, in order to form a source region and a drain region on the surface of a wafer, a plurality of wafers are arranged on a disk in the circumferential direction, and a rotary arm that supports the disk is rotated about its axis. A technique for injecting an ion beam into a wafer on the disk is described. Then, 1/4 of the total implantation amount of the ion beam is implanted to rotate the wafer 90 degrees in the circumferential direction (rotation), then 1/4 is implanted again to further rotate the wafer 90 degrees, and thus the wafer is 1 By injecting the entire implantation amount during the circumference, ions are uniformly implanted into the transistors that are directed in various directions with respect to the reciprocating linear motion of the disk. However, there is no suggestion about the above-described problems and solutions in an apparatus that performs ALD.

US Pat. No. 6,634,314 JP 2001-254181 A: FIGS. 1 and 2 Japanese Patent No. 3144664: FIG. 1, FIG. 2, Claim 1 JP-A-4-287912 US Pat. No. 7,153,542: FIGS. 8 (a) and 8 (b) JP 2007-247066 A: Paragraphs 0023-0025, 0058, FIGS. 12 and 18 US Patent Publication No. 2007-218701 US Patent Publication No. 2007-218702 JP-A-5-152238: paragraphs 0016 to 0019, FIGS. 3 and 4

  The present invention has been made based on such circumstances, and an object of the present invention is to revolve the substrate on the table relative to the gas supply system and sequentially turn at least two kinds of reaction gases to react with each other. A film forming apparatus capable of performing film forming processing with high in-plane uniformity when forming a thin film by laminating reaction product layers by supplying to the surface of the substrate and executing this supply cycle And a storage medium storing the film forming method.

The film forming apparatus of the present invention
In a film forming apparatus for forming a thin film by laminating reaction product layers by sequentially supplying at least two kinds of reaction gases that react with each other in a vacuum vessel to the surface of the substrate and executing this supply cycle.
A table provided in the vacuum vessel;
A plurality of reaction gas supply means provided to face the upper surface of the table and to be spaced apart from each other in the circumferential direction of the table, and to supply a plurality of reaction gases to the surface of the substrate;
In order to divide the atmosphere between the plurality of processing regions to which the reaction gas is supplied from the plurality of reaction gas supply units, the separation gas supply unit is provided between the processing regions in the circumferential direction of the table. A separation region for supplying gas;
A rotation mechanism for relatively rotating the reaction gas supply means and the separation gas supply means, and the table about a vertical axis;
A substrate placement region formed on the table so as to follow the rotation direction of the rotation mechanism such that the plurality of processing regions and the separation region are sequentially positioned by rotation of the rotation mechanism;
A rotation mechanism for rotating the substrate placed in the substrate placement region about a vertical axis;
Evacuation means for evacuating the inside of the vacuum vessel ;
And a controller that outputs a control signal so as to stop relative rotation by the rotation mechanism during the thin film formation process and to change the orientation of the substrate by the rotation mechanism .

As a specific aspect of the film forming apparatus, the following configuration may be used.
The substrate is configured to sequentially pass through the plurality of processing regions and separation regions by rotation of the table,
The autorotation mechanism is provided on the lower side of the table, and the substrate on the table is pushed up from the lower side and rotated to change the orientation of the substrate.
The autorotation mechanism further has a role of transferring a substrate between the table and an external transport mechanism.
The substrate is configured to sequentially pass through the plurality of processing regions and separation regions by rotation of the table,
The autorotation mechanism is provided on the upper side of the table, and sandwiches and rotates the substrate on the table from the side to change the orientation of the substrate.
The table has a circular planar shape when viewed from above,
The plurality of reaction gas supply means is means for supplying reaction gas in a line shape along the radial direction of the table.
The separation region is located on both sides in the rotation direction of the rotation mechanism in the separation gas supply means, and forms a narrow space between the separation region and the table for the separation gas to flow from the separation region to the processing region side. A configuration with a ceiling surface.
In order to separate the atmosphere of the plurality of processing regions, it is located in the central portion in the vacuum vessel, comprising a central region in which discharge holes for discharging a separation gas are formed on the substrate mounting surface side of the table,
The reaction gas is exhausted by the vacuum exhaust means together with a separation gas diffusing on both sides of the separation region and a separation gas discharged from the central region.

The film forming method of the present invention comprises:
In a film forming method in which at least two kinds of reaction gases that react with each other in a vacuum vessel are sequentially supplied to the surface of a substrate and a layer of reaction products is stacked to form a thin film by executing this supply cycle.
A step of placing a substrate on a substrate placement region on a table provided in a vacuum vessel;
Reactive gas is supplied to the surface of the substrate on the table from the plurality of reactive gas supply means provided so as to face the upper surface of the table and spaced apart from each other in the circumferential direction of the table. And a process of
In order to partition the atmosphere of a plurality of processing regions to which reaction gases are supplied from the plurality of reaction gas supply units, respectively, separation is performed with respect to a separation region provided between these processing regions in the circumferential direction of the table. Supplying a separation gas from the gas supply means, and preventing the reaction gas from entering the separation region;
Next, the reaction gas supply unit, the separation gas supply unit, and the table are rotated relative to each other around a vertical axis by a rotation mechanism, and the substrates are sequentially positioned in the plurality of processing regions and the separation regions. Forming a thin film by laminating reaction product layers;
A step of rotating the substrate about a vertical axis by a rotation mechanism and changing the direction thereof in the middle of the step of forming the thin film.

Specific steps of the film forming method described above may be as follows.
The step of changing the orientation is a step of stopping relative rotation by the rotation mechanism in the middle of the step of forming the thin film, and then changing the orientation of the substrate by the rotation mechanism.
The step of preventing intrusion of the reaction gas includes forming a narrow space between the ceiling surface of the vacuum vessel and the table on both sides of the rotation direction of the rotation mechanism in the separation gas supply means, and from the separation region. A process of flowing a separation gas to the processing region side through a narrow space.
The step of preventing the intrusion of the reaction gas is performed by separating the separation gas from the central region located in the central portion of the vacuum vessel to the substrate mounting surface side of the table in order to separate the atmospheres of the plurality of processing regions. And exhausting the reaction gas together with the separation gas diffused on both sides of the separation region and the separation gas discharged from the central region.

The storage medium of the present invention is
At least two kinds of reactive gases that react with each other in a vacuum vessel are sequentially supplied to the surface of the substrate, and this supply cycle is executed to form a thin film by laminating reaction product layers. In a storage medium storing a computer program to be recorded,
In the computer program, steps are set so as to implement the film forming method described above.

  The present invention is a film forming apparatus for forming a thin film by laminating layers of reaction products by a cycle in which at least two kinds of reaction gases that react with each other are sequentially supplied to the surface of a substrate. The gas supply system and the table are relatively arranged around the vertical axis so that the substrate is positioned in order between the plurality of processing regions to be supplied and the separation regions to which the separation gas is supplied between these processing regions. In the rotating film-forming apparatus, the substrate is rotated around the vertical axis in the middle of the process to change its orientation, so the non-uniformity of gas flow in the plane of the substrate is alleviated, and as a result A film forming process with high uniformity of film and film quality can be performed.

It is a longitudinal cross-sectional view of the film-forming apparatus which concerns on embodiment of this invention. It is a perspective view which shows schematic structure inside the said film-forming apparatus. It is a cross-sectional top view of said film-forming apparatus. It is a longitudinal cross-sectional view which shows the process area | region and isolation | separation area | region in said film-forming apparatus. It is an enlarged view of the cross section of said film-forming apparatus. It is an enlarged view of the cross section of said film-forming apparatus. It is a perspective view which shows a part of said film-forming apparatus. It is a schematic diagram which shows the flow of the purge gas in said film-forming apparatus. It is a partially broken perspective view of said film-forming apparatus. It is a cross-sectional view showing a mechanism for rotating the substrate in the film forming apparatus. It is a schematic diagram which shows the flow of a process in said film-forming apparatus. It is a schematic diagram which shows the flow of the gas in said film-forming apparatus. It is a schematic diagram which shows a mode that a board | substrate is rotated in said film-forming apparatus. It is the schematic which shows a mode that a board | substrate rotates in said film-forming apparatus. It is a schematic diagram which shows other embodiment of said film-forming apparatus. It is a cross-sectional view which shows the other example of said film-forming apparatus. It is a perspective view which shows said other film-forming apparatus. It is a top view which shows said other film-forming apparatus. It is a perspective view which shows the longitudinal cross-section of said other film-forming apparatus. It is a cross-sectional view showing the other film forming apparatus. It is explanatory drawing which shows said film-forming apparatus. It is a top view which shows the other example of said film-forming apparatus. It is a top view which shows the other example of said film-forming apparatus. It is a top view which shows an example of the substrate processing apparatus with which said film-forming apparatus is applied. It is a top view which shows the other example of said board | substrate processing apparatus. It is a perspective view which shows an example of the autorotation mechanism provided in said substrate processing apparatus. It is the schematic which shows the other example of said autorotation mechanism. It is a characteristic view which shows the characteristic acquired in the Example of this invention.

[First Embodiment]
The film forming apparatus according to the first embodiment of the present invention includes a flat vacuum container 1 having a substantially circular planar shape as shown in FIGS. And a turntable 2 having a center of rotation at the center of the container 1. The vacuum container 1 includes a generally cup-shaped container body 12 that houses the turntable 2, and a top plate 11 that is formed in a disk shape so as to airtightly close the opening on the upper surface of the container body 12. ing. The top plate 11 is hermetically connected to the container body 12 side through a seal member, for example, an O-ring 13 provided in a ring shape on the periphery of the upper surface of the container body 12, and is moved up and down by an opening / closing mechanism (not shown). It is configured to be opened and closed.

  The rotary table 2 is fixed to a cylindrical core portion 21 at the center, and the core portion 21 is fixed to the upper end of a rotary shaft 22 that extends in the vertical direction. The rotating shaft 22 passes through the bottom surface portion 14 of the vacuum vessel 1 and has a lower end attached to a driving unit 23 that is a rotating mechanism that rotates the rotating shaft 22 about the vertical axis in this example clockwise. The rotating shaft 22 and the drive unit 23 are accommodated in a cylindrical case body 20 whose upper surface is open. The case body 20 has a flange portion provided on the upper surface thereof attached to the lower surface of the bottom surface portion 14 of the vacuum vessel 1 in an airtight manner, and the airtight state between the internal atmosphere and the external atmosphere of the case body 20 is maintained.

  As shown in FIGS. 2 and 3, a plurality of, for example, five semiconductor wafers (hereinafter referred to as “wafers”) W are placed on the surface of the turntable 2 along the rotation direction (circumferential direction). A circular recess 24 is provided, and the recess 24 is configured to revolve around the vertical axis around the rotation center of the turntable 2 by the rotation of the turntable 2. In FIG. 3, for convenience, the wafer W is depicted only in one recess 24. Here, FIG. 4 is a developed view showing the rotary table 2 cut along a concentric circle and developed laterally. The recess 24 has a diameter larger than the diameter of the wafer W as shown in FIG. For example, it is slightly larger by 4 mm, and its depth is set to be equal to the thickness of the wafer W. Therefore, when the wafer W is dropped into the concave portion 24, the surface of the wafer W and the surface of the turntable 2 (region where the wafer W is not placed) are aligned. If the difference in height between the surface of the wafer W and the surface of the turntable 2 is large, pressure fluctuation occurs at the stepped portion, so that the height of the surface of the wafer W and the surface of the turntable 2 can be made uniform. From the viewpoint of uniform in-plane film thickness uniformity. Aligning the height of the surface of the wafer W and the surface of the turntable 2 means that the height is the same or the difference between both surfaces is within 5 mm, but the height of both surfaces is as high as possible depending on the processing accuracy. It is preferable that the difference between the values be close to zero. On the bottom surface of the recess 24, as will be described later, a lifting plate 200 is supported on the rotary table 2 for supporting the vicinity of the central portion of the wafer W from the lower surface side and moving it up and down. In FIG. 4, the drawing of the lifting plate 200 is omitted.

  The concave portion 24 is for positioning the wafer W so that it does not pop out due to the centrifugal force accompanying the rotation of the turntable 2, and is a portion corresponding to the substrate mounting area of the present invention. The mounting region (wafer mounting region) is not limited to the concave portion, and may have a configuration in which, for example, a plurality of guide members that guide the periphery of the wafer W are arranged on the surface of the turntable 2 along the circumferential direction of the wafer W. Alternatively, when the wafer W is attracted by providing a chuck mechanism such as an electrostatic chuck on the turntable 2 side, an area where the wafer W is placed by the suction becomes a substrate placing area.

  As shown in FIGS. 2, 3, and 5, first and second reaction gas nozzles 31 and 32 made of, for example, quartz are respectively disposed at the upper positions of the turntable 2 that face the passage regions of the recesses 24. Two separation gas nozzles 41 and 42 are arranged at a distance from each other in the circumferential direction of the vacuum vessel 1 (the rotation direction of the rotary table 2). In this example, the second reaction gas nozzle 32, the separation gas nozzle 41, the first reaction gas nozzle 31, and the separation gas nozzle 42 are arranged clockwise in this order. The reaction gas nozzles 31 and 32 and the separation gas nozzles 41 and 42 are attached in a line so as to extend horizontally from the outer peripheral wall of the vacuum vessel 1 toward the rotation center of the rotary table 2 facing the wafer W, for example. The gas introduction ports 31a, 32a, 41a, and 42a that are the base end portions penetrate the outer peripheral wall. The reaction gas nozzles 31 and 32 and the separation gas nozzles 41 and 42 constitute a reaction gas supply unit and a separation gas supply unit, respectively, and are attached to through holes 100 formed at a plurality of locations on the side wall of the vacuum vessel 1. The through hole 100 to which the nozzles 31, 32, 41, 42 are not attached is hermetically sealed by a cover member (not shown).

  The reaction gas nozzles 31 and 32 are respectively provided with BTBAS (Bistal Butylaminosilane) gas, which is the first reaction gas, and the second reaction by gas supply pipes 31b and 32b provided with valves and flow rate adjusting units (not shown). O3 (ozone) gas, which is a gas, is supplied. Further, the separation gas nozzles 41 and 41 are configured to be supplied with N 2 gas (nitrogen gas), which is a separation gas, through a gas supply pipe provided with a valve and a flow rate adjusting unit (not shown).

  In the reaction gas nozzles 31 and 32, for example, a gas discharge hole 33 having a diameter of 0.5 mm for discharging the reaction gas to the lower side faces directly below and extends in the nozzle length direction (radial direction of the rotary table 2). For example, they are arranged at equal intervals with an interval of 10 mm. The separation gas nozzles 41 and 42 have gas discharge holes 40 with a diameter of 0.5 mm, for example, for discharging the separation gas on the lower side. It has been drilled. The distance between the gas discharge holes 33 of the reaction gas nozzles 31 and 32 and the wafer W is, for example, 1 to 4 mm, preferably 2 mm. The distance between the gas discharge holes 40 of the separation gas nozzles 41 and 42 and the wafer W is, for example, 1 -4 mm, preferably 3 mm. The lower regions of the reaction gas nozzles 31 and 32 become a first processing region 91 for adsorbing the BTBAS gas to the wafer W and a second processing region 92 for adsorbing the O 3 gas to the wafer W, respectively.

The separation gas nozzles 41 and 42 are for forming a separation region D for separating the first processing region 91 and the second processing region 92, and the top plate of the vacuum vessel 1 in the separation region D 2 to 4, the planar shape formed by dividing the circle drawn around the rotation center of the turntable 2 and along the vicinity of the inner peripheral wall of the vacuum vessel 1 in the circumferential direction is a fan. A convex portion 4 is provided which protrudes downward from the mold. The separation gas nozzles 41 and 42 are accommodated in a groove 43 formed so as to extend in the radial direction of the circle at the center of the convex portion 4 in the circumferential direction of the circle. That is, the distance from the central axis of the separation gas nozzle 41 (42) to the fan-shaped edges (the upstream edge and the downstream edge in the rotation direction of the rotary table 2) that are the convex portions 4 is set to the same length. Yes.
In this embodiment, the groove portion 43 is formed so as to bisect the convex portion 4, but in other embodiments, for example, the rotation of the turntable 2 in the convex portion 4 when viewed from the groove portion 43. The groove 43 may be formed such that the upstream side in the direction is wider than the downstream side in the rotational direction.

Accordingly, for example, a flat low ceiling surface 44 (first ceiling surface) that is the lower surface of the convex portion 4 exists on both sides of the separation gas nozzles 41 and 42 in the rotation direction, and both sides of the ceiling surface 44 in the rotation direction are present. The ceiling surface 45 (second ceiling surface) higher than the ceiling surface 44 exists. The role of the convex portion 4 is a separation space that is a narrow space for preventing the first reactive gas and the second reactive gas from entering the rotary table 2 to prevent the mixing of the reactive gases. Is to form.
That is, taking the separation gas nozzle 41 as an example, O3 gas is prevented from entering from the upstream side in the rotation direction of the turntable 2, and BTBAS gas is prevented from entering from the downstream side in the rotation direction. “Preventing gas intrusion” means that N 2 gas, which is a separation gas discharged from the separation gas nozzle 41, diffuses between the first ceiling surface 44 and the surface of the turntable 2, and in this example the first gas This means that the gas is blown into the space below the second ceiling surface 45 adjacent to the ceiling surface 44, thereby preventing gas from entering the adjacent space. “Gas can no longer enter” does not mean that the gas cannot enter the space below the convex portion 4 from the adjacent space at all. This also means that a state in which the BTBAS gas does not intermingle in the convex portion 4 is ensured. As long as such an effect is obtained, the atmosphere of the first processing region 91 which is the role of the separation region D and the second The separation effect from the atmosphere of the processing region 92 can be exhibited. Therefore, the degree of narrowing in the narrow space is determined by the difference in pressure between the narrow space (the space below the convex portion 4) and the area adjacent to the space (the space below the second ceiling surface 45 in this example) It can be said that the specific dimension differs depending on the area of the convex portion 4 and the like. In addition, the gas adsorbed on the wafer W can naturally pass through the separation region D, and the prevention of gas intrusion means gas in the gas phase.

In this example, a wafer W having a diameter of 300 mm is used as the substrate to be processed. In this case, the convex portion 4 is located 140 mm away from the rotation center of the turntable 2 on the outer peripheral side (a boundary portion with the protrusion 5 described later). The length in the circumferential direction (the length of the arc concentric with the rotary table 2) is, for example, 146 mm, and the outermost length of the mounting area (recess 24) of the wafer W is, for example, 502 mm in the circumferential direction. is there. As shown in FIG. 4A, the length L is 246 mm when viewed from the circumferential length L of the convex portion 4 located on the left and right sides of the separation gas nozzle 41 (42) in the outer portion. It is.
Further, as shown in FIG. 4A, the height h from the lower surface of the convex portion 4, that is, the ceiling surface 44, to the surface of the turntable 2 may be, for example, 0.5 mm to 10 mm, and is about 4 mm. Is preferred. In this case, the rotation speed of the turntable 2 is set to 1 rpm to 500 rpm, for example. Therefore, in order to ensure the separation function of the separation region D, the size of the convex portion 4 and the lower surface (first ceiling surface 44) of the convex portion 4 according to the usage range of the rotational speed of the turntable 2 and the like. The height h with respect to the surface of the rotary table 2 is set based on, for example, experiments. The separation gas is not limited to nitrogen (N2) gas, but can be inert gas such as argon (Ar) gas, but is not limited to such gas, and may be hydrogen (H2) gas or the like. As long as the gas does not affect the film forming process, the type of gas is not particularly limited.

On the other hand, a projecting portion 5 is provided on the lower surface of the top plate 11 so as to face a portion on the outer peripheral side of the core portion 21 in the turntable 2 and along the outer periphery of the core portion 21. The projecting portion 5 is formed continuously with the portion of the convex portion 4 on the rotation center side of the rotary table 2, and the lower surface thereof is formed at the same height as the lower surface (ceiling surface 44) of the convex portion 4. Yes. 2 and 3 show the top plate 11 cut horizontally at a position lower than the ceiling surface 45 and higher than the separation gas nozzles 41 and 42. In addition, the protrusion part 5 and the convex-shaped part 4 are not necessarily restricted to integral, The separate body may be sufficient.
The bottom surface of the top plate 11 of the vacuum vessel 1, that is, the ceiling surface viewed from the wafer placement area (recessed portion 24) of the rotary table 2, as described above, is the first ceiling surface 44 and the second ceiling higher than the ceiling surface 44. FIG. 1 shows a longitudinal section of a region where the high ceiling surface 45 is provided, and FIG. 6 shows a region where the low ceiling surface 44 is provided. The longitudinal section about is shown. As shown in FIGS. 2 and 6, the peripheral edge of the fan-shaped convex portion 4 (the portion on the outer edge side of the vacuum vessel 1) is bent in an L shape so as to face the outer end surface of the rotary table 2. Thus, a bent portion 46 is formed. Since the fan-shaped convex portion 4 is provided on the top plate 11 side and can be detached from the container main body 12, there is a slight gap between the outer peripheral surface of the bent portion 46 and the container main body 12. There is. The bent portion 46 is also provided for the purpose of preventing the reaction gas from entering from both sides in the same manner as the convex portion 4 and preventing the mixture of both reaction gases. The inner peripheral surface of the bent portion 46 and the rotary table are provided. 2 and the gap between the outer peripheral surface of the bent portion 46 and the container body 12 are set to the same dimensions as the height h of the ceiling surface 44 with respect to the surface of the turntable 2. In this example, it can be seen from the surface side region of the turntable 2 that the inner peripheral surface of the bent portion 46 constitutes the inner peripheral wall of the vacuum vessel 1.

  As shown in FIG. 6, the inner peripheral wall of the container main body 12 is formed on a vertical surface close to the outer peripheral surface of the bent portion 46 as shown in FIG. 6. For example, the vertical cross-sectional shape is cut out in a rectangular shape from the portion facing the outer end surface of the turntable 2 to the bottom surface portion 14 and is recessed outward. When the regions communicating with the first processing region 91 and the second processing region 92 described above in the depressed portion are referred to as a first exhaust region E1 and a second exhaust region E2, respectively, As shown in FIGS. 1 and 3, a first exhaust port 61 and a second exhaust port 62 are formed at the bottoms of the exhaust region E1 and the second exhaust region E2, respectively. As shown in FIG. 1 described above, the first exhaust port 61 and the second exhaust port 62 are connected to, for example, a vacuum pump 64 which is a vacuum exhaust unit via an exhaust path 63 in which a valve 65 is interposed. ing.

  These exhaust ports 61 and 62 are provided on both sides in the rotational direction of the separation region D when viewed in a plane so that the separation action of the separation region D works reliably. Specifically, the first exhaust port between the first processing area 91 and the separation area D adjacent to the first processing area 91 on the downstream side in the rotation direction, for example, when viewed from the rotation center of the turntable 2. 61 is formed, and the second exhaust between the second processing region 92 and the separation region D adjacent to the second processing region 92 on the downstream side in the rotational direction, for example, when viewed from the rotation center of the turntable 2. A port 62 is formed, and each reaction gas (BTBAS gas and O3 gas) is exhausted exclusively. In this example, one exhaust port 61 is connected to the first reaction gas nozzle 31 and an extension line of the edge on the first reaction gas nozzle 31 side of the separation region D adjacent to the reaction gas nozzle 31 on the downstream side in the rotation direction. The other exhaust port 62 is provided between the second reaction gas nozzle 32 and an extension of the edge on the second reaction gas nozzle 32 side of the separation region D adjacent to the reaction gas nozzle 32 on the downstream side in the rotation direction. It is provided between the lines. That is, the first exhaust port 61 includes a straight line L1 passing through the center of the rotary table 2 and the first processing area 91 indicated by a one-dot chain line in FIG. 3, the center of the rotary table 2, and the first processing area. 91 and a straight line L2 passing through the upstream edge of the separation region D adjacent to the downstream side of 91, and the second exhaust port 62 is connected to the center of the turntable 2 indicated by the two-dot chain line in FIG. It is located between a straight line L3 passing through the second processing region 92 and a straight line L4 passing through the center of the turntable 2 and the upstream edge of the separation region D adjacent to the downstream side of the second processing region 92. ing.

  Note that the number of exhaust ports is not limited to two. For example, the separation region D including the separation gas nozzle 42 and the second reaction gas nozzle 32 adjacent to the separation region D on the downstream side in the rotation direction. Three exhaust ports may be further provided between them, or four or more. In this example, the exhaust ports 61 and 62 are provided at a position lower than the rotary table 2 so that the exhaust is exhausted from the gap between the inner peripheral wall of the vacuum vessel 1 and the peripheral edge of the rotary table 2. It is not restricted to providing in a bottom face part, You may provide in the side wall of the vacuum vessel 1. FIG. Further, when the exhaust ports 61 and 62 are provided on the side wall of the vacuum vessel 1, they may be provided at a position higher than the turntable 2. By providing the exhaust ports 61 and 62 in this way, the gas on the turntable 2 flows toward the outside of the turntable 2, so that particles are wound up as compared with the case of exhausting from the ceiling surface facing the turntable 2. This is advantageous in terms of being suppressed.

  As shown in FIGS. 1 and 7, a heater unit 7 serving as a heating unit is provided in the space between the rotary table 2 and the bottom surface portion 14 of the vacuum vessel 1, and the rotary table 2 is interposed via the rotary table 2. 2 is configured to heat the wafer W on 2 to a temperature determined by the process recipe. In order to partition the atmosphere from the upper space of the turntable 2 to the exhaust area E and the atmosphere in which the heater unit 7 is placed, on the lower side near the periphery of the turntable 2, A cover member 71 is provided so as to surround the periphery. The cover member 71 is formed in a flange shape with the upper edge bent outward, and the gap between the bent surface and the lower surface of the turntable 2 is reduced to allow gas to enter the cover member 71 from the outside. That is holding down.

  The bottom surface portion 14 in the portion closer to the rotation center than the space where the heater unit 7 is disposed is near the center portion of the lower surface of the turntable 2 and is close to the core portion 21, and the space therebetween is narrow. The clearance between the inner peripheral surface of the through hole of the rotary shaft 22 that penetrates the bottom surface portion 14 and the rotary shaft 22 is narrow, and these narrow spaces communicate with the case body 20. The case body 20 is provided with a purge gas supply pipe 72 for supplying N2 gas as a purge gas into the narrow space for purging. Further, a purge gas supply pipe 73 for purging the arrangement space of the heater unit 7 is provided on the bottom surface portion 14 of the vacuum vessel 1 at a plurality of positions in the circumferential direction at a position below the heater unit 7.

  By providing the purge gas supply pipes 72 and 73 in this way, the space from the inside of the case body 20 to the arrangement space of the heater unit 7 is purged with N2 gas, as indicated by arrows in FIG. The purge gas is exhausted from the gap between the turntable 2 and the cover member 71 to the exhaust ports 61 and 62 through the exhaust region E. This prevents the BTBAS gas or the O3 gas from flowing from one of the first processing region 91 and the second processing region 92 described above to the other through the lower part of the turntable 2, so that this purge gas is a separation gas. Also plays a role.

  Further, a separation gas supply pipe 51 is connected to the central portion of the top plate 11 of the vacuum vessel 1 so that N2 gas as separation gas is supplied to a space 52 between the top plate 11 and the core portion 21. Has been. The separation gas supplied to the space 52 is discharged toward the periphery along the surface of the turntable 2 on the wafer mounting region side through a narrow gap 50 between the protruding portion 5 and the turntable 2. It will be. Since the space surrounded by the protrusion 5 is filled with the separation gas, the reaction gas (BTBAS gas) is interposed between the first processing region 91 and the second processing region 92 through the center of the turntable 2. Or O3 gas) is prevented from mixing. That is, this film forming apparatus is partitioned by the rotation center portion of the turntable 2 and the vacuum vessel 1 in order to separate the atmosphere of the first processing region 91 and the second processing region 92, and the separation gas is purged. In addition, it can be said that the discharge port for discharging the separation gas on the surface of the turntable 2 includes the central region C formed along the rotation direction. The discharge port here corresponds to a narrow gap 50 between the protruding portion 5 and the rotary table 2.

  Further, as shown in FIGS. 2, 3 and 9, a transfer port 15 for transferring the wafer W between the external transfer arm 10 and the rotary table 2 is formed on the side wall of the vacuum container 1. The transport port 15 is opened and closed by a gate valve G. In addition, on the bottom surface of each recess 24, a lifting plate 200 is provided for supporting the vicinity of the central portion of the wafer W from the lower surface side so as to move up and down in order to transfer the wafer W to and from the transfer arm 10. In addition, the transfer arm 10 is divided into a U-shape on the tip side so that the wafer W can be received without interfering with the lifting plate 200. As shown in FIG. 10, the approximate center of the recess 24 is lowered one step to form a circular recess 201, and the bottom of the recess 201 is formed in an annular shape so as to protrude inward. The area on the side is an opening 202. The lifting plate 200 is provided so as to close the opening 202. The lifting plate 200 has an upper surface whose height position is the same as or slightly lower than the lower surface position of the wafer W in the recess 24, for example. It is formed to become.

  Since the wafer 24 is transferred to and from the transfer arm 10 at a position facing the transfer port 15 in the recess 24 which is a wafer placement area in the turntable 2, the transfer arm 10 is provided below the turntable 2. As shown in FIG. 10, a lifting mechanism, for example, a lifting pin 16 for supporting the lifting plate 200 from the back surface side and lifting it is provided. The elevating pin 16 moves the elevating pin 16 and the elevating shaft 17 clockwise and clockwise around the vertical axis through an elevating shaft 17 extending vertically so as to penetrate the heater unit 7 and the bottom surface portion 14 of the vacuum vessel 1. It is connected to an elevating mechanism 18 that also serves as a rotation mechanism for rotation (rotation). Accordingly, the lift pins 16 can raise and rotate the wafer W, as will be described later, in addition to the function of performing the lift operation to carry the wafer W in and out of the vacuum chamber 1. It is configured as follows. Between the elevating shaft 17 and the bottom surface portion 14 of the vacuum vessel 1, a bearing portion 19a and a magnetic seal 19b are interposed. In FIG. 10, G is a gate valve.

  Further, as shown in FIG. 1 described above, the film forming apparatus includes a control unit 80 including a computer for controlling the operation of the entire apparatus. The control unit 80 includes a CPU, a memory, and a processing program. In this memory, the flow rate of BTBAS gas, O3 gas and N2 gas supplied from the nozzles 31, 32, 41 and 42, the processing pressure, the target film thickness T of the thin film to be formed on the wafer W, and the below-mentioned An area in which processing conditions such as the number N of film forming steps and the rotation angle θ for rotating the wafer W in the rotation step are written is provided for each recipe. The above processing program reads the recipe written in the above memory, sends a control signal to each part of the film forming apparatus in accordance with this recipe, and advances the steps described below to process the wafer W. Instructions are incorporated. This program is installed in the control unit 80 from the storage unit 85 which is a storage medium such as a hard disk, a compact disk, a magneto-optical disk, a memory card, or a flexible disk.

  Next, the operation of the above-described first embodiment will be described with reference to FIGS. In the following example, an example in which a thin film made of a silicon oxide film having a target film formation amount (film thickness) of T nm, for example, 80 nm is formed on the surface of the wafer W will be described. First, the gate valve G is opened, and the wafer W is transferred from the outside of the film forming apparatus to the recess 24 of the turntable 2 through the transfer port 15 by the transfer arm 10 (step S1). In this delivery, when the recess 24 stops at the position facing the transfer port 15, the transfer arm 10 transfers the wafer W to the upper position of the lifting plate 200 and then the U-shaped branch of the transfer arm 10. The lifting / lowering shaft 17 is raised to the delivery position so that the lifting / lowering plate 200 supports the wafer W from the lower surface side via the inner region. Then, the transfer arm 10 is retracted to the outside of the vacuum container 1, and the elevating plate 200 is lowered to the mounting position to store the wafer W in the recess 24. Such delivery of the wafer W is performed by intermittently rotating the turntable 2, and the wafer W is placed in each of the five recesses 24 of the turntable 2. Subsequently, the turntable 2 is rotated clockwise at a predetermined number of rotations, for example, 240 rpm, the valve 65 is fully opened to evacuate the inside of the vacuum vessel 1, and the wafer W is set to a set temperature, for example, 350 ° C. by the heater unit 7. Heat (step S2). Specifically, the turntable 2 is preheated to, for example, 350 ° C. by the heater unit 7, and the wafer W is heated to the set temperature as described above by being placed on the turntable 2.

  Next, the degree of opening of the valve 65 is adjusted so that the inside of the vacuum container 1 has a predetermined degree of vacuum, and the first reaction gas nozzle 31 and the second reaction gas nozzle 32 enter the vacuum container 1 from, for example, 200 sccm and 10,000 sccm, respectively. BTBAS gas and O3 gas are supplied. Further, the N 2 gas is supplied into the vacuum vessel 1 from the separation gas nozzles 41 and 42 at, for example, 10,000 sccm and 10,000 sccm, respectively, and the N 2 gas is supplied from the separation gas supply pipe 51 and the purge gas supply pipe 72 at a predetermined flow rate to the central region C and Supply to the narrow space already described (step S3).

  Then, since the wafer W passes through the first processing area 91 and the second processing area 92 alternately by the rotation of the turntable 2, the BTBAS gas is adsorbed, and then the O3 gas is adsorbed to oxidize the BTBAS molecule. As a result, one or more molecular layers of silicon oxide (SiO2), which is a reaction product, are formed. Thus, the rotation of the turntable 2 (reaction in each processing region 91, 92) is performed a predetermined number of times, for example, 20 times, so that the film thickness on the surface of the wafer W is 1 / N (N ≧ 2) of the target film thickness T. In this example, a 1/8 (N = 8, 80/8 = 10 nm) silicon oxide film is laminated, and a film forming step is performed (step S4).

  At this time, N2 gas is supplied between the first processing region 91 and the second processing region 92, and N2 gas which is a separation gas is also supplied to the central region C. In addition, each gas is exhausted so that the BTBAS gas and the O3 gas are not mixed. In the separation region D, since the gap between the bent portion 46 and the outer end surface of the turntable 2 is narrow as described above, the BTBAS gas and the O3 gas pass through the outside of the turntable 2. It does not mix. Therefore, the atmosphere of the first processing region 91 and the atmosphere of the second processing region 92 are completely separated, and the BTBAS gas is exhausted to the exhaust port 61 and the O3 gas is exhausted to the exhaust port 62. As a result, the BTBAS gas and the O3 gas are not mixed in the atmosphere or on the wafer W.

In this example, the inner peripheral wall of the container body 12 along the space below the second ceiling surface 45 where the reaction gas nozzles 31 and 32 are disposed is notched as described above. Since the exhaust ports 61 and 62 are located below the wide space, the second space is smaller than the narrow space below the first ceiling surface 44 and each pressure in the central region C. The pressure in the space below the ceiling surface 45 is lower.
Since the lower side of the turntable 2 is purged with N2 gas, the gas flowing into the exhaust region E passes through the lower side of the turntable 2 and, for example, BTBAS gas flows into the O3 gas supply region. It is not at all.

  Subsequently, as an intermediate step, the supply of the BTBAS gas is stopped, and the rotation of the turntable 2 is stopped so that the recess 24 is positioned above the lifting pins 16 as shown in FIG. (Step S5). When the supply of the BTBAS gas is stopped, the BTBAS gas in the vacuum vessel 1 is quickly exhausted. Therefore, even if the rotation of the turntable 2 is stopped, each wafer W is not affected by the BTBAS gas. Then, as shown in FIG. 6B, as a rotation step, the lifting plate 16 and the wafer W are lifted by the lifting pins 16, and the wafer W is rotated 360 ° / N around the vertical axis, for example, clockwise in this example 360. / 8 = Rotate 45 degrees (rotate) and change its direction. Then, the wafer W is lowered and stored in the recess 24 (step S6). Further, the rotary table 2 is intermittently rotated (revolved), and such rotation (spinning) of the wafer W is performed on the five wafers W placed on the rotary table 2. When the supply of BTBAS gas is stopped, the supply of O3 gas may be stopped together with this BTBAS gas.

  Next, the turntable 2 is rotated and the supply of the BTBAS gas is started, and a silicon oxide film having a film thickness of 10 nm (film thickness T / N = 80/8) is formed in the same manner as the film forming step in step S4. (Step S7). At this time, since the wafer W is rotated clockwise by 45 ° as described above, the wafer W is shifted by 45 ° clockwise relative to the horizontal posture when the film forming step is performed. The silicon oxide film having a total of 20 nm (film thickness T / N × 2 = 80/8 × 2) is formed on the wafer W. A film is formed.

  Then, the intermediate step, the rotation step, and the film forming step are performed (N−2) times in this example so that a thin film having a film thickness of T nm is formed while the wafer W rotates clockwise and rotates once. Repeat 6 times (step S8). That is, the supply of the BTBAS gas and the rotation of the turntable 2 are stopped (intermediate step), the wafer W is rotated 45 ° clockwise (rotation step), and then a 10 nm silicon oxide film is formed (deposition step). ) Are repeated six times in this order, so that the wafer W is rotated little by little during the film forming process. Then, a silicon oxide film having a thickness of 10 nm is formed every time the wafer W rotates 45 ° clockwise, and rotates in total 45 ° × 6 = 270 ° clockwise, and a total of 10 × 6 = 60 nm silicon oxide. A film is formed. Therefore, when viewed from the wafer W before film formation (when it is loaded into the vacuum chamber 1), the wafer W after film formation rotates 315 ° (45 + 270) clockwise and from the silicon oxide film of 80 nm (60 + 20). A thin film is formed.

  FIG. 14 schematically shows the rotation angle and film thickness of the wafer W in the film formation process described above. The wafer W rotates in a total of 8 times (N times) and 45 degrees clockwise. A total of 7 (N-1) rotation steps are alternately performed, so that, for example, the film rotates about one turn (more specifically, 315 °) clockwise, for example, while an 80 nm thin film is formed. Become. Note that the arrows drawn on the wafer W in FIG. 14 schematically show how the wafer W rotates, for example, the rotation of the wafer W from the position before the first film forming step is performed. It shows the angle. Further, the horizontal axis in FIG. 14 indicates the total number of steps of the film forming step and the rotation step.

When the film forming process is thus completed, the supply of gas is stopped and the inside of the vacuum vessel 1 is evacuated, and then the rotation of the rotary table 2 is stopped and the respective wafers W are sequentially moved by the transfer arm 10 by the reverse operation. Take it out. As described above, since the wafer W rotates 315 ° in the clockwise direction compared to before loading (before film formation), the wafer W is rotated 45 by the lifting pins 16 before being unloaded from the vacuum container 1. ° It may be rotated and returned to the same orientation as when it was loaded.
Here, an example of processing parameters will be described. The rotation speed of the turntable 2 is, for example, 1 rpm to 500 rpm when a 300 mm diameter wafer W is used as a substrate to be processed, and a separation gas supply pipe at the center of the vacuum vessel 1. The flow rate of N2 gas from 51 is, for example, 5000 sccm.

  According to the above-described embodiment, when the thin film is formed by sequentially supplying two kinds of reaction gases (BTBAS gas and O3 gas) to the surface of the wafer W, the processing regions 91 and 92, and these processing regions, respectively. After rotating the rotary table 2 around the vertical axis so that the wafer W passes in sequence between the separation region D between 91 and 92, the reaction product layer is laminated on the wafer W and then rotated. The wafer W on the table 2 is rotated about the vertical axis, and then the reaction product layer is laminated again to form a thin film. Therefore, for example, even if there is an uneven area in which the film thickness tends to increase or an area in which the film thickness tends to decrease in each recess 24 of the turntable 2, for example, silicon formed in the first film formation step Even if the film thickness of the oxide film is not uniform, in the subsequent film forming step, the film forming step is performed while rotating around the vertical axis, so that each of the unevenly distributed regions is shifted in the circumferential direction of the wafer W. Since the next silicon oxide film is formed (so as not to increase the unevenness of the film thickness), the film forming process can be performed with high uniformity of film thickness over the surface. Therefore, for example, the gas concentration distribution and the gas flow are not uniform in the length direction (radial direction of the rotary table 2) of the nozzles 31 and 32 of the vacuum vessel 1 or the circumferential direction (rotational direction) of the rotary table 2. However, since the non-uniformity is alleviated, the film forming process can be performed so that the film and the film quality are uniform throughout the surface.

At this time, the film formation step is divided into eight times with respect to the target film formation amount T, and the wafer W is rotated clockwise by 45 °. Therefore, the film thickness variation in each film formation step is in-plane. As can be seen from the simulation results described later, the in-plane uniformity can be improved to 1% or less.
Further, since the rotation of the wafer W is performed inside the vacuum vessel 1, the time required for the rotation can be shortened, for example, compared with the case where the wafer W is rotated outside the vacuum vessel 1, thereby reducing the throughput. In-plane uniformity can be improved.

  Furthermore, as described above, a plurality of wafers W are arranged in the rotation direction of the turntable 2, and the turntable 2 is rotated so that the first processing area 91 and the second processing area 92 are passed through in order. Since ALD (or MLD) is performed, film formation can be performed with high throughput. In addition, a separation region D having a low ceiling surface is provided between the first processing region 91 and the second processing region 92 in the rotation direction, and is partitioned by the rotation center portion of the turntable 2 and the vacuum vessel 1. The separation gas is discharged from the center region C toward the periphery of the turntable 2, and the reaction gas is mixed with the separation gas diffused on both sides of the separation region D and the separation gas discharged from the center region C. Since the exhaust gas is exhausted through a gap between the peripheral edge of the vacuum vessel and the inner peripheral wall of the vacuum vessel, mixing of both reaction gases can be prevented, and as a result, a good film forming process can be performed and rotation can be performed. It is suppressed as much as possible that no reaction product is generated on the table 2, and generation of particles is suppressed. The present invention can also be applied to the case where one wafer W is placed on the turntable 2.

  The number N of film formation steps may be two or more (the number of rotations of the wafer W is one and the rotation angle is 180 °) or more from a simulation result described later. Although it is considered that the speed is improved, the time required for the rotation of the wafer W is increased, and the throughput may be reduced. Further, in forming the thin film by dividing the film forming step into N times, the silicon oxide film having the same film thickness is formed in each film forming step, but different film thicknesses may be used. Specifically, for example, when the target film formation amount T is 80 nm, for example, after a 60 nm silicon oxide film is formed in the first film formation step, the wafer W is rotated by 180 °, and then a 20 nm silicon oxide film is formed. A film may be formed. Even in this case, the uniformity of the film thickness can be improved as compared with the case where the wafer W is not rotated. In addition, when forming the thin film by dividing the film forming step into N times, the wafer W was rotated at 360 ° / N at equal intervals in each rotation step. If the film formation amount T is the target, the rotation angle θ of the wafer W in each rotation step may be as follows. Specifically, for example, when the target film formation amount T is 80 nm, the wafer W is rotated seven times and the film formation step is divided into eight times to form a silicon oxide film by 10 nm, for example, seven times. The wafer W may be rotated by 30 ° in each rotation step, or the wafer W is rotated by 45 ° in the first rotation step, and the wafer W is rotated by 30 ° in each of the subsequent six rotation steps. You may let them. Further, for example, when the target film-forming amount T is 80 nm, a silicon oxide film of 60 nm, for example, is formed in the first film-forming step, and then the wafer W is rotated by 90 °, for example, and then a silicon oxide film of 20 nm is formed. May be formed. That is, the film formation may be performed in a state where the rotation angle θ of the wafer W is shifted by a predetermined angle (θ ≠ 0, 360) in any one of the second and subsequent film formation steps. Even in such a case, the uniformity of the film thickness can be improved as compared with the case where the film is formed without rotating the wafer W.

[Second Embodiment]
In the above example, when the wafer W is rotated, the elevating mechanism 18 is also used as the rotation mechanism. However, as the second embodiment, this rotation mechanism may be provided separately. Specifically, for example, as shown in FIG. 15A, a through hole 210 is formed in the top plate 11 at a position above the elevating pins 16, and a vacuum vessel is placed from above the top plate 11 through the through hole 210. A lifting shaft 211 that extends vertically is disposed in 1. For example, a rotation mechanism 212 that holds the elevating shaft 211 up and down and rotatable about the vertical axis is disposed on the top plate 11. Also, a lifting mechanism 213 is connected to the lower surface of the lifting shaft 211, and a holding mechanism in which the inner side for sandwiching the wafer W from the lateral side and supporting it on the back surface is recessed in a rectangular shape on the lower surface side of the lifting plate 213. 214 and 214 are arranged so as to be horizontally movable so as to be spaced apart from each other in the diameter direction of the wafer W. In FIG. 15, the same members as those in the above-described example are denoted by the same reference numerals and description thereof is omitted. FIG. 2B is a plan view of the lifting plate 213 when viewed from the wafer W side (lower side).

  The lift plate 213 (holding mechanism 214) retreats to an upper position that does not interfere with the rotation operation of the turntable 2 when the wafer W is not rotated (when the wafer W is loaded or unloaded or during film formation). When W is rotated, the holding mechanisms 214 and 214 are lowered to a lower position in a state where the holding mechanisms 214 and 214 are separated from each other by a larger diameter than the diameter of the wafer W. When the wafer W is rotated by the rotation mechanism 212, the rotary table 2 is stopped so that the wafer W is positioned above the lifting pins 16 and the lifting plate 213 is lowered to the lower position as in the above example. Let Next, the wafer W is pushed up from the back surface side by the lift pins 16 to raise the wafer W to the inner area of the holding mechanisms 214 and 214, and move the holding mechanisms 214 and 214 to the inner side (wafer W side), respectively. Is lifted from both sides, and the lift pins 16 are lowered to deliver the wafer W to the holding mechanisms 214 and 214. Next, the rotation mechanism 212 rotates the wafer W by a predetermined angle and raises the lifting pins 16 again, and the wafer W is placed in the recess 24 in the reverse order to the wafer W transfer operation. . Also in such a rotation mechanism 212, the film forming step and the rotation step are performed similarly to the above example, and the same effect can be obtained.

[Third Embodiment]
In the film forming apparatus of each of the above embodiments, the rotary table 2 is rotated around the vertical axis with respect to the nozzles 31, 32, 41, and 42. However, the nozzles 31, 32, 41, and 42 are A configuration in which the rotary table 2 rotates about the vertical axis may be employed. Such a specific apparatus configuration will be described with reference to FIGS. 16 to 20 as a third embodiment of the present invention. Note that the same parts as those of the film forming apparatus described above are denoted by the same reference numerals and description thereof is omitted.

  In the vacuum vessel 1, a susceptor 300, which is a table, is arranged instead of the rotary table 2 described above. The upper end side of the rotating shaft 22 is connected to the center of the bottom surface of the susceptor 300 so that the susceptor 300 can be rotated when the wafer W is loaded and unloaded. On the susceptor 300, the above-described recesses 24 are formed in a plurality of places, for example, five places in the circumferential direction, and the above-described lifting plate 200 is provided in the recesses 24.

  As shown in FIGS. 16 to 18, the nozzles 31, 32, 41, and 42 described above are attached to a flat disk-shaped core portion 301 provided immediately above the central portion of the susceptor 300, and the proximal end The portion penetrates the side wall of the core portion 301. As will be described later, the core portion 301 is configured to rotate, for example, counterclockwise around a vertical axis. By rotating the core portion 301, the gas supply nozzles 31, 32, 41, and 42 are connected to the susceptor 300. It can be rotated in the upper position. FIG. 17 shows a state in which the vacuum container 1 (the top plate 11 and the container main body 12) and a later-described sleeve 304 fixed to the upper surface of the top plate 11 are removed.

The already-described convex portion 4 is fixed to the side wall portion of the core portion 301 and is configured to be able to rotate on the susceptor 300 together with the gas supply nozzles 31, 32, 41, 42. As shown in FIGS. 17 and 18, the core portion 301 has a convex portion 4 and a core provided on the upstream side in the rotational direction of the reaction gas supply nozzles 31 and 32, as shown in FIGS. 17 and 18. Two exhaust ports 61 and 62 are provided at a position before the joint portion with the portion 301. These exhaust ports 61 and 62 are respectively connected to an exhaust pipe 302 described later, and serve to exhaust the reaction gas and the separation gas from the processing regions 91 and 92. The exhaust ports 61 and 62 are provided on both sides in the rotation direction of the separation region D, as in the above-described example, and each reaction gas (BTBAS gas and O ₃ gas) is exhausted exclusively.

As shown in FIG. 16, a lower end portion of a cylindrical rotating cylinder 303 is connected to the central portion of the upper surface of the core portion 301, and the rotation is performed in a sleeve 304 fixed on the top plate 11 of the vacuum vessel 1. By rotating the cylinder 303, the nozzles 31, 32, 41, 42 and the convex part 4 are rotated together with the core part 301 in the vacuum container 1. The inside of the core part 301 is a space whose lower surface side is open, and the reaction gas supply nozzles 31 and 32 and the separation gas supply nozzles 41 and 42 penetrating the side walls of the core part 301 supply BTBAS gas in the space. The first reaction gas supply pipe 305, the second reaction gas supply pipe 306 for supplying O ₃ gas, and the separation gas supply pipes 307 and 308 for supplying N ₂ gas as a separation gas are connected (for convenience, FIG. 16 shows only the separation gas supply pipes 307 and 308).

  Each of the supply pipes 305 to 308 is bent in an L shape and extends upward near the rotation center of the core part 301, specifically around the exhaust pipe 302 described later, and penetrates the ceiling surface of the core part 301. The inside of the cylindrical rotating cylinder 303 is extended vertically upward.

As shown in FIGS. 16, 17, and 19, the rotary cylinder 303 is configured to have an external shape in which two cylinders having different outer diameters are stacked in two upper and lower stages, and the bottom surface of the upper cylinder having a large outer diameter is formed. By engaging with the upper end surface of the sleeve 304, the rotary cylinder 303 is inserted into the sleeve 304 in a state of being rotatable in the circumferential direction when viewed from the upper surface side, while the top plate 11 is placed on the lower end side of the rotary cylinder 303. It penetrates and is connected to the upper surface of the core part 301.
On the outer peripheral surface side of the rotating cylinder 303 at a position above the top plate 11, gas diffusion paths, which are annular channels formed over the entire circumferential surface of the outer peripheral surface, are arranged at intervals in the vertical direction. Yes. In this example, a separation gas diffusion path 309 for diffusing the separation gas (N ₂ gas) is arranged at the upper stage position, the first reaction gas diffusion path 310 for diffusing the BTBAS gas at the middle stage position, and the lower stage position. A second reaction gas diffusion path 311 for diffusing O ₃ gas is disposed. In the figure, reference numeral 312 denotes a lid portion of the rotary cylinder 303, and 313 denotes an O-ring that brings the lid portion 312 and the rotary cylinder 303 into close contact with each other.

  The gas diffusion paths 309 to 311 are provided with slits 320, 321, and 322 that open toward the outer surface of the rotary cylinder 303 over the entire circumference of the rotary cylinder 303, and the respective gas diffusion paths 309 to 311. Various gases are supplied through the slits 320, 321, and 322. On the other hand, the sleeve 304 that covers the rotary cylinder 303 is provided with gas supply ports 323, 324, and 325, which are gas supply ports, at height positions corresponding to the slits 320, 321, and 322. The gas supplied from the supply source to these gas supply ports 323, 324, and 325 passes through the slits 320, 321, and 322 that open toward the ports 323, 324, and 325. 311 is supplied.

  Here, the outer diameter of the rotating cylinder 303 inserted into the sleeve 304 is formed as close as possible to the inner diameter of the sleeve 304 within a range in which the rotating cylinder 303 can rotate. In the regions other than the openings 324 and 325, the slits 320, 321 and 322 are closed by the inner peripheral surface of the sleeve 304. As a result, the gas introduced into each gas diffusion path 309, 310, 311 diffuses only in the gas diffusion paths 309, 310, 311 and, for example, other gas diffusion paths 309, 310, 311 and the vacuum vessel 1 Inside, it does not leak to the outside of the film forming apparatus. In FIG. 1, reference numeral 326 denotes a magnetic seal for preventing gas leakage from the gap between the rotary cylinder 303 and the sleeve 304, and these magnetic seals 326 are also provided above and below the gas diffusion paths 309, 310, 311. Thus, various gases are surely sealed in the gas diffusion paths 309, 310, and 311 but are omitted for convenience in the drawing. In FIG. 19, the magnetic seal 326 is not shown.

  As shown in FIG. 19, gas supply pipes 307 and 308 are connected to the gas diffusion path 309 on the inner peripheral surface side of the rotating cylinder 303, and each gas supply pipe 305 described above is connected to each gas diffusion path 310 and 311. , 306 are connected to each other. As a result, the separation gas supplied from the gas supply port 323 diffuses in the gas diffusion path 309 and flows to the nozzles 41 and 42 via the gas supply pipes 307 and 308, and is supplied from the gas supply ports 324 and 325. The various reaction gases thus diffused in the gas diffusion paths 310 and 311 flow to the nozzles 31 and 32 through the gas supply pipes 305 and 306, respectively, and are supplied into the vacuum vessel 1. . In FIG. 19, the exhaust pipe 302 described later is omitted for convenience of illustration.

Here, as shown in FIG. 19, a purge gas supply pipe 330 is further connected to the separation gas diffusion path 309. The purge gas supply pipe 330 is extended downward in the rotary cylinder 303 as shown in FIG. is opened to a space in the core section 301 can supply N ₂ gas into the inner space. Here, for example, as shown in FIG. 16, the core portion 301 is supported by the rotating cylinder 303 so as to float from the surface of the susceptor 300, for example, with a gap having the height h described above. On the other hand, since the core part 301 is not fixed, it can be freely rotated. However, if a gap is opened between the susceptor 300 and the core portion 301 in this way, for example, BTBAS gas or O ₃ gas is passed from one of the processing regions 91 and 92 described above to the other through the lower portion of the core portion 301. There is a risk of getting around.

Therefore, the inside of the core portion 301 is a cavity, the lower surface side of the cavity is opened toward the susceptor 300, and purge gas (N ₂ gas) is supplied from the purge gas supply pipe 330 into the cavity. By blowing the purge gas toward the respective processing regions 91 and 92, the above-described reaction gas can be prevented from flowing around. That is, this film forming apparatus is partitioned by the central portion of the susceptor 300 and the vacuum vessel 1 in order to separate the atmosphere of the processing regions 91 and 92, and a discharge port for discharging a purge gas to the surface of the susceptor 300 has a core portion 301. It can be said that the center part area | region C formed along the rotation direction is provided. In this case, the purge gas serves as a separation gas for preventing the BTBAS gas or the O ₃ gas from flowing into the other through the lower portion of the core portion 301. The discharge port here corresponds to a gap between the side wall of the core portion 301 and the susceptor 300.

  As shown in FIG. 16, a drive belt 335 is wound around a side circumferential surface of a cylindrical portion having a large outer diameter on the upper stage side of the rotating cylinder 303, and this drive belt 335 is disposed above the vacuum vessel 1. The driving unit 336 that is the rotating mechanism transmits the driving force of the driving unit 336 to the core unit 301 via the driving belt 335, thereby rotating the rotating cylinder 303 in the sleeve 304. Note that reference numeral 337 in FIG. 16 denotes a holding unit for holding the drive unit 336 at a position above the vacuum vessel 1.

An exhaust pipe 302 is disposed in the rotary cylinder 303 along the center of rotation. The lower end portion of the exhaust pipe 302 penetrates the upper surface of the core portion 301 and extends into the space in the core portion 301, and the lower end surface is sealed. On the other hand, exhaust suction pipes 341 and 342 connected to the exhaust ports 61 and 62 are provided on the side peripheral surface of the exhaust pipe 302 extending into the core portion 301, for example, as shown in FIG. The exhaust gas from each of the processing regions 91 and 92 can be drawn into the exhaust pipe 302 in isolation from the atmosphere in the core portion 301 filled with the purge gas. As described above, the exhaust pipe 302 is not shown in FIG. 19, but the gas supply pipes 305, 306, 307, and 308 and the purge gas supply pipe 330 shown in FIG. It is arranged around the tube 302.
As shown in FIG. 16, the upper end portion of the exhaust pipe 302 passes through the lid portion 312 of the rotating cylinder 303 and is connected to, for example, a vacuum pump 343 that is a vacuum exhaust means. In FIG. 16, reference numeral 344 denotes a rotary joint that rotatably connects the exhaust pipe 302 to the downstream pipe.

  As shown in FIG. 20, the above-described lifting pins 16 are provided at the lower position of the susceptor 300. In this example, the lifting pins 16 are arranged in the respective recesses 24 as schematically shown in FIG. It is provided for each lower position. That is, in this embodiment, since the film forming process is performed by rotating the nozzles 31, 32, 41, and 42 (rotating cylinder 303) without rotating the susceptor 300, the film forming process is performed independently for each wafer W. An elevating pin 16, an elevating shaft 17, an elevating mechanism 18, a bearing portion 19a, and a magnetic seal 19b are provided so that they can rotate. Further, when the wafer W is carried into and out of the vacuum container 1, the susceptor 300 is rotated so that each recess 24 faces the transfer port 15. When rotating the wafer W, it is lowered so as not to interfere with the susceptor 300, and when the wafer W is rotated, it is raised.

  Regarding the flow of the film forming process using this apparatus, differences from steps S1 to S8 shown in FIG. 11 described above will be briefly described below. First, in step S1, the elevating pin 16 is lowered so as not to interfere with the rotating operation of the susceptor 300, and the susceptor 300 is intermittently rotated as described above, so that the transport arm 10 and the elevating pin 16 cooperate. The wafer W is placed in each of the five recesses 24 by the operation.

  Next, in step S <b> 2, the susceptor 300 is stopped so that each recess 24 is positioned above each lifting pin 16. Then, the rotating cylinder 303 is rotated counterclockwise. Then, as shown in FIG. 19, the gas diffusion paths 309 to 312 provided in the rotary cylinder 303 rotate as the rotary cylinder 303 rotates, but the slits 320 to 320 provided in these gas diffusion paths 309 to 311. Various gas is continuously supplied to the gas diffusion paths 309 to 312 because a part of the 322 is always open toward the openings of the corresponding gas supply ports 323 to 325.

  Various gases supplied to the gas diffusion paths 309 to 312 are supplied to the reaction gas supply nozzles 31 and 32, the separation gas supply nozzle 41, via the gas supply pipes 305 to 308 connected to the respective gas diffusion paths 309 to 312. 42 to the processing areas 91 and 92 and the separation area D. These gas supply pipes 305 to 308 are fixed to the rotary cylinder 303, and the reaction gas supply nozzles 31 and 32 and the separation gas supply nozzles 41 and 42 are fixed to the rotary cylinder 303 via the core portion 301. Accordingly, various gases are supplied into the vacuum container 1 while the gas supply pipes 305 to 308 and the gas supply nozzles 31, 32, 41, and 42 are rotated along with the rotation of the rotary cylinder 303.

At this time, N ₂ gas as separation gas is also supplied from the purge gas supply pipe 330 that is rotating integrally with the rotary cylinder 303, whereby the central region C, that is, the side wall portion of the core portion 301 and the susceptor 300. N ₂ gas is discharged along the surface of the susceptor 300 from between the center portion. In this example, since the exhaust ports 61 and 62 are located in the side wall portion of the core portion 301 along the space below the second ceiling surface 45 where the reactive gas supply nozzles 31 and 32 are disposed, The pressure in the space below the second ceiling surface 45 is lower than the narrow space below the first ceiling surface 44 and the pressure in the central region C. For this reason, the BTBAS gas and the O3 gas are exhausted independently without being mixed with each other as in the film forming apparatus described above.

  Therefore, when viewed from each wafer W stopped on the susceptor 300, the processing regions 91 and 92 pass through the separation region D in order, and the film forming step is performed as described above. . When a silicon oxide film having a predetermined thickness is formed, the wafers W are individually rotated independently at the predetermined timing as the rotation step, as in the example described above. As described above, when rotating the wafer W, the supply of the BTBAS gas may be stopped as in the above-described example, or the rotation of the rotary cylinder 303 may be stopped. Further, the supply of O3 gas together with the BTBAS gas may be stopped. Furthermore, the wafer W may be rotated without stopping the rotation of the rotating cylinder 303 and the supply of the BTBAS gas and the O3 gas. In this case, for example, the wafer W is not rotated while contacting the BTBAS gas. The wafer W may be rotated while passing through the second processing region 92 or the separation region D.

  Also in this embodiment, a highly uniform film forming process is performed in the same manner, and the same effect can be obtained. Also in this example, the holding mechanism 214, 214 in the second embodiment described above is provided so as to rotate together with the nozzles 31, 32, 41, 42, the convex portion 4, and the rotating cylinder 303, and the wafer W is provided. You may make it rotate. In this case, the rotation of the wafer W is performed while the rotation of the rotating cylinder 303 is stopped.

  As the processing gas (reaction gas) applied in the present invention, in addition to the above examples, DCS [dichlorosilane], HCD [hexachlorodisilane], TMA [trimethylaluminum], 3DMAS [trisdimethylaminosilane], TEMAZ [tetrakis] Ethylmethylaminozirconium], TEMHF [tetrakisethylmethylaminohafnium], Sr (THD) 2 [strontium bistetramethylheptanedionato], Ti (MPD) (THD) [titanium methylpentanedionatobistetramethylheptandedionato] And monoaminosilane.

[Preferred examples, other embodiments]
For example, in the film forming apparatus of the first embodiment, on the ceiling surface 44 of the separation region D, the upstream portion of the turntable 2 in the rotation direction with respect to the separation gas nozzles 41 and 42 is closer to the outer edge. The width in the rotation direction is preferably large. The reason is that the flow of the gas from the upstream side toward the separation region D by the rotation of the turntable 2 is so fast that it approaches the outer edge. From this point of view, it is a good idea to configure the convex portion 4 in a fan shape as described above.
The first ceiling surface 44 that forms narrow spaces located on both sides of the separation gas nozzle 41 (42) will be described with reference to, for example, the film forming apparatus of the first embodiment. When the wafer W having a diameter of, for example, 300 mm is used as the substrate to be processed as shown by the separation gas nozzle 41 in FIGS. 21 (a) and 21 (b), the rotation direction of the turntable 2 at the portion where the center WO of the wafer W passes It is preferable that the width dimension L along is 50 mm or more. In order to effectively prevent the reaction gas from entering the lower part (narrow space) of the convex part 4 from both sides of the convex part 4, when the width dimension L is short, the first It is also necessary to reduce the distance h between the ceiling surface 44 and the turntable 2. Further, if the distance h between the first ceiling surface 44 and the turntable 2 is set to a certain dimension, the speed of the turntable 2 increases as the distance from the rotation center of the turntable 2 increases. The width dimension L required to obtain the intrusion prevention effect increases as the distance from the rotation center increases. Considering from this point of view, if the width L at the portion through which the center WO of the wafer W passes is smaller than 50 mm, the distance h between the first ceiling surface 44 and the turntable 2 needs to be considerably reduced. Therefore, in order to prevent the collision between the rotary table 2 or the wafer W and the ceiling surface 44 when the rotary table 2 is rotated, a device for suppressing the swing of the rotary table 2 as much as possible is required. Furthermore, the higher the rotational speed of the turntable 2, the easier it is for the reactive gas to enter from the upstream side of the convex part 4 to the lower side of the convex part 4, so if the width dimension L is smaller than 50 mm, The rotational speed of the table 2 must be lowered, which is not a good idea in terms of throughput. Therefore, the width L is preferably 50 mm or more, but even if it is 50 mm or less, the effect of the present invention is not obtained. That is, the width dimension L is preferably 1/10 to 1/1 of the diameter of the wafer W, and more preferably about 1/6 or more.

Further, in the present invention, it is preferable that the low ceiling surfaces 44 are located on both sides of the separation gas supply means in the rotation direction, but without providing the convex portions 4 on both sides of the separation gas nozzles 41, 42, downward from the separation gas nozzles 41, 42. Alternatively, N2 gas may be blown out to form an air curtain, and the processing regions 91 and 92 may be separated by this air curtain.
The heating means for heating the wafer W is not limited to a heater using a resistance heating element, and may be a lamp heating device, and may be provided above the turntable 2 instead of being provided below the turntable 2. It may be provided on both upper and lower sides. Further, when the reaction by the reaction gas occurs at a low temperature, for example, at a normal temperature, it is not necessary to provide such a heating means.

Here, other examples than the above embodiment will be given for the layouts of the processing areas 91 and 92 and the separation area. In the separation region D, it has already been described that the fan-shaped convex portion 4 may be divided into two in the circumferential direction, and the separation gas nozzle 41 (42) may be provided between them, but FIG. It is a top view which shows an example of such a structure taking the film-forming apparatus of 1st Embodiment mentioned above as an example. In this case, the distance between the fan-shaped convex portion 4 and the separation gas nozzle 41 (42), the size of the fan-shaped convex portion 4, and the like take into consideration the discharge flow rate of the separation gas and the discharge flow rate of the reaction gas. The separation region D is set so as to exhibit an effective separation action.
In the above-described embodiment, the first processing area 91 and the second processing area 92 correspond to areas whose ceiling surfaces are higher than the ceiling surface of the separation area D. At least one of the first processing region 91 and the second processing region 92 is provided opposite to the turntable 2 on both sides in the rotation direction of the reaction gas supply means, like the separation region D, and the turntable. 2 on the ceiling surface lower than the ceiling surfaces (second ceiling surface 45) on both sides in the rotational direction of the separation region D so as to form a space for preventing gas intrusion between It is good also as a structure provided with the ceiling surface of the same height as the 1st ceiling surface 44. FIG.

Further, a low ceiling surface is provided on both sides of the reaction gas nozzle 31 (32), and the entire surface of the region facing the turntable 2 is convex except for the location where the separation gas nozzle 41 (42) and the reaction gas nozzle 31 (32) are provided. It is good also as a structure which provides the part 4. FIG.
Similarly, as shown in FIG. 23 by taking the film forming apparatus of the first embodiment as an example, the attachment positions of the nozzles 31, 32, 41, and 42 may be changed. A nozzle 32 is attached to the through hole 100 on the upstream side of the rotation table 2 in the rotation direction with respect to the mouth 15. Similarly, in this film forming apparatus, the cycle in which BTBAS is adsorbed on the surface of the wafer W and the BTBAS gas is oxidized by O3 gas is repeated many times while exhausting the reactant gases so as not to mix with each other. A thin film is formed.

  The present invention is not limited to using two types of reaction gases, and can also be applied to the case where three or more types of reaction gases are sequentially supplied onto the substrate. In that case, for example, the gas nozzles are arranged in the circumferential direction of the vacuum vessel 1 in the order of the first reaction gas nozzle, the separation gas nozzle, the second reaction gas nozzle, the separation gas nozzle, the third reaction gas nozzle, and the separation gas nozzle. What is necessary is just to comprise the isolation | separation area | region containing a gas nozzle like the above-mentioned embodiment.

[Substrate processing equipment]
Next, FIG. 24 shows the entire configuration of the substrate processing apparatus provided with the film forming apparatus. In FIG. 24, 111 is a hermetic transfer container called a hoop for storing, for example, 25 wafers W, 112 is an atmospheric transfer chamber in which the transfer arm 113 is disposed, and 114 and 115 are between an atmospheric atmosphere and a vacuum atmosphere. A load lock chamber (preliminary vacuum chamber) in which the atmosphere can be switched, 116 is a vacuum transfer chamber in which two transfer arms 117 and 117 (transfer arm 10 described above) are arranged, and 118 and 119 are film forming apparatuses of the present invention. It is.

  Next, the flow of processing in this substrate processing apparatus will be described. The transport container 111 is transported from the outside to a loading / unloading port having a mounting table (not shown), connected to the atmospheric transport chamber 112, then the lid is opened by an opening / closing mechanism (not shown), and the transport arm 113 removes the transport container 111 from the inside. The wafer W is taken out. Next, the wafer W is loaded into the load lock chamber 114 (115), the chamber is switched from the atmospheric atmosphere to the vacuum atmosphere, and then loaded into one of the film forming apparatuses 118 and 119 by the transfer arm 117. The film forming process (film forming step) is performed.

  According to the substrate processing apparatus, so-called ALD (MLD) can be performed with high throughput by providing, for example, two, for example, two film forming apparatuses for processing five sheets.

[Other examples of substrate processing apparatus]
In the above example, the wafer W is rotated in the film forming apparatus. However, the wafer W may be rotated outside the film forming apparatus. Such an example will be described with reference to FIG. In the vacuum transfer chamber 116 of the above-described substrate processing apparatus, a position where the two vacuum transfer arms 117 and 117 can respectively access, for example, close to the film forming apparatuses 118 and 119 at an intermediate position between the two vacuum transfer arms 117 and 117. As shown in FIG. 26, the position includes a lift shaft 130 for pushing up the wafer W held on the vacuum transfer arm 117 from the back side and rotating it around the vertical axis, and the lift shaft 130 from below. A rotation mechanism 132 including a drive unit 131 that is rotatably and vertically movable around a vertical axis is provided. The rotation mechanism 132 is for changing the direction of the wafer W during film formation by the film formation apparatuses 118 and 119 and continuing the film formation. In FIG. 26, only one transfer arm 117 is drawn.

  In this substrate processing apparatus, when the wafer W is rotated, for example, the opening degree of the valve 65 is adjusted so that the degree of vacuum in the vacuum container 1 is approximately the same as the degree of vacuum in the vacuum transfer chamber 116 described above, The gate valve G is opened to allow the vacuum transfer arm 117 to enter the vacuum chamber 1, and the wafer W is transferred to the vacuum transfer arm 117 by the cooperative action with the lift pins 16. Next, the wafer W on the vacuum transfer arm 117 is moved to a position above the rotation mechanism 132 and the lifting shaft 130 is pushed upward from the lower side to lift the wafer W. Subsequently, the elevating shaft 130 is rotated around the vertical axis by the drive unit 131, and the orientation of the wafer W is changed in the same manner as in the example described above. Then, the elevating shaft 130 is lowered to deliver the wafer W to the vacuum transfer arm 117, and the wafer W is loaded into the vacuum container 1. In this way, after rotating the rotary table 2 intermittently to rotate the remaining four wafers W in the rotation mechanism 132, the film forming process is continued as in the above-described example. In this example as well, the same effect can be obtained by making the film thickness uniform in the same plane as in the example described above.

  Further, when the wafer W is rotated, the rotation mechanism 132 is provided in the vacuum transfer chamber 116, but the rotation mechanism 132 may be provided in combination with the vacuum transfer arm 117. As such a vacuum transfer arm 117, as specifically shown in FIG. 27, it is good also as a slide arm which advances / retreats along the rail 142 formed on the support plate 141. As shown in FIG. The above-described rotation mechanism 132 is provided in each of the transfer arms 117 and 117 and is embedded in each support plate 141 so that the wafer W held on the transfer arm 117 when the transfer arm 117 is retracted. It is configured to be movable up and down and rotatable about a vertical axis. In this transfer arm 117 as well, the wafer W is rotated in the same manner as in the above example, and the same effect can be obtained. Alternatively, the vacuum transfer arm 117 may be provided in the atmospheric transfer chamber 112 described above instead of the atmospheric transfer arm 113 described above, and the wafer W may be rotated in the atmospheric transfer chamber 112.

  Next, a simulation performed to evaluate how much the in-plane uniformity is improved when the above film forming method is performed will be described. The simulation was performed under the following conditions.

(Simulation conditions)
Number of rotations of the rotary table 2: 120 rpm, 240 rpm
Target film thickness T: about 155 nm
Number of rotations of wafer: None (Comparison object), 1 time (Rotation angle: 180 °), 8 times (Rotation angle: 45 °), 4 times (Rotation angle: 90 °)
When the wafer W is rotated, the wafer W is rotated by the same angle under each condition. Further, the film thickness was measured (calculated) for each wafer W at 49 points in the circumferential direction. In addition, for the simulations in which the number of rotations of the wafer W was 8 times and 4 times, the film thickness was measured at 8 points and 4 points in the radial direction of the wafer W, and the average value was used.

(result)
As a result, as shown in FIG. 28, it was found that even if the wafer W was rotated once, the in-plane uniformity was improved, and the uniformity was further improved as the number of rotations was further increased. Then, it was found that when the wafer W was rotated eight times, the uniformity was greatly improved to 1% or less under the condition that the rotation speed of the turntable 2 was 240 rpm.

DESCRIPTION OF SYMBOLS 1 Vacuum container 2 Rotary table 4 Convex part C Center area D Separation area E Exhaust area W Wafer 16 Lifting pins 31, 32 Nozzle 41, 42 Separation gas nozzles 61, 62 Exhaust ports 91, 92 Processing area 200 Lifting plate

Claims (12)

In a film forming apparatus for forming a thin film by laminating reaction product layers by sequentially supplying at least two kinds of reaction gases that react with each other in a vacuum vessel to the surface of the substrate and executing this supply cycle.
A table provided in the vacuum vessel;
A plurality of reaction gas supply means provided to face the upper surface of the table and to be spaced apart from each other in the circumferential direction of the table, and to supply a plurality of reaction gases to the surface of the substrate;
In order to divide the atmosphere between the plurality of processing regions to which the reaction gas is supplied from the plurality of reaction gas supply units, the separation gas supply unit is provided between the processing regions in the circumferential direction of the table. A separation region for supplying gas;
A rotation mechanism for relatively rotating the reaction gas supply means and the separation gas supply means, and the table about a vertical axis;
A substrate placement region formed on the table so as to follow the rotation direction of the rotation mechanism such that the plurality of processing regions and the separation region are sequentially positioned by rotation of the rotation mechanism;
A rotation mechanism for rotating the substrate placed in the substrate placement region about a vertical axis;
Evacuation means for evacuating the inside of the vacuum vessel ;
A film forming apparatus comprising: a control unit that stops relative rotation by the rotating mechanism during the thin film forming process and outputs a control signal so as to change the direction of the substrate by the rotating mechanism . The substrate is configured to sequentially pass through the plurality of processing regions and separation regions by rotation of the table,
The rotation mechanism is provided on the lower side of the table, is rotated by pushing up the substrate on the table from below, according to claim 1, characterized in that it is configured to change the orientation of the substrate Film forming equipment. The film forming apparatus according to claim 2 , wherein the rotation mechanism further has a role of transferring a substrate between the table and an external transport mechanism. The substrate is configured to sequentially pass through the plurality of processing regions and separation regions by rotation of the table,
The rotation mechanism is provided on the upper side of the table, according to claim 1, the substrate on the table rotated by sandwiching from the side end, characterized in that it is configured to change the orientation of the substrate 2. The film forming apparatus according to 1. The table has a circular planar shape when viewed from above,
Wherein the plurality of reaction gas supply means, the film forming apparatus according to any one of claims 1 to 4, characterized in that a means for supplying a reaction gas in a line across the radial direction of each said table . The separation region is located on both sides in the rotation direction of the rotation mechanism in the separation gas supply means, and forms a narrow space between the separation region and the table for the separation gas to flow from the separation region to the processing region side. film forming apparatus according to any one of claims 1, characterized in that it comprises a ceiling surface 5. In order to separate the atmosphere of the plurality of processing regions, it is located in the central portion in the vacuum vessel, comprising a central region in which discharge holes for discharging a separation gas are formed on the substrate mounting surface side of the table,
The reaction gas is one of growth of the claims 1, characterized in that it is evacuated by the vacuum evacuation means with the separation gas and the separation gas ejected from the center area to spread on both sides of the isolation region 6 Membrane device. In a film forming method in which at least two kinds of reaction gases that react with each other in a vacuum vessel are sequentially supplied to the surface of a substrate and a layer of reaction products is stacked to form a thin film by executing this supply cycle.
A step of placing a substrate on a substrate placement region on a table provided in a vacuum vessel;
Reactive gas is supplied to the surface of the substrate on the table from the plurality of reactive gas supply means provided so as to face the upper surface of the table and spaced apart from each other in the circumferential direction of the table. And a process of
In order to partition the atmosphere of a plurality of processing regions to which reaction gases are supplied from the plurality of reaction gas supply units, respectively, separation is performed with respect to a separation region provided between these processing regions in the circumferential direction of the table. Supplying a separation gas from the gas supply means, and preventing the reaction gas from entering the separation region;
Next, the reaction gas supply unit, the separation gas supply unit, and the table are rotated relative to each other around a vertical axis by a rotation mechanism, and the substrates are sequentially positioned in the plurality of processing regions and the separation regions. Forming a thin film by laminating reaction product layers;
A film forming method comprising: rotating the substrate about a vertical axis by a rotation mechanism and changing the direction of the thin film during the film forming process. The step of changing the orientation is to claim 8, wherein the thin film stop relative rotation by the rotating mechanism during the process of forming and then a step of changing the direction of the substrate by the rotation mechanism The film-forming method of description. The step of preventing intrusion of the reaction gas includes forming a narrow space between the ceiling surface of the vacuum vessel and the table on both sides of the rotation direction of the rotation mechanism in the separation gas supply means, and from the separation region. The film forming method according to claim 8, wherein the film forming method is a step of flowing a separation gas toward the processing region through a narrow space. The step of preventing the intrusion of the reaction gas is performed by separating the separation gas from the central region located in the central portion of the vacuum vessel to the substrate mounting surface side of the table in order to separate the atmospheres of the plurality of processing regions. the ejected, the film formation according to any one of the separation to claims 8 is a step of exhausting the reaction gas together with the separation gas ejected from the separation gas and the central region diffuses to both sides of the region 10 Method. At least two kinds of reactive gases that react with each other in a vacuum vessel are sequentially supplied to the surface of the substrate, and this supply cycle is executed to form a thin film by laminating reaction product layers. In a storage medium storing a computer program to be recorded,
12. A storage medium characterized in that the computer program includes steps so as to carry out the film forming method according to any one of claims 8 to 11 .

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