JP6492528B2 - Heating apparatus, substrate bonding apparatus, heating method, and manufacturing method of laminated semiconductor device - Google Patents

Description

  The present invention relates to a heating apparatus, a substrate bonding apparatus, a heating method, and a method for manufacturing a laminated semiconductor device.

There is a heating and pressing apparatus that manufactures a substrate having a laminated structure by laminating and heating a plurality of substrates (for example, see Patent Document 1).
Japanese Patent Application Laid-Open No. 2008-282857

  There may be a case where the manufacturing yield of the laminated substrate is lowered due to the positional deviation between the substrates which occurs in the heating device.

  According to the first aspect of the present invention, the heating unit that heats at least one of the first substrate and the second substrate and the positional relationship between the aligned first substrate and second substrate are maintained. And a controller that controls the temperature of at least one of the substrate and the second substrate.

  According to the second aspect of the present invention, the heating unit that heats at least one of the first substrate and the second substrate, the first substrate by thermal expansion in at least one of the first substrate and the second substrate, and Before the mutual displacement of the second substrate exceeds a predetermined threshold value, the first substrate and any one of the heating devices described above, the first substrate and the second substrate are unloaded from the alignment device, and the heating device There is provided a substrate bonding apparatus including a transfer robot for carrying in the apparatus.

  According to the third aspect of the present invention, the alignment device for aligning the first substrate and the second substrate with each other, any of the heating devices described above, and the alignment of the first substrate and the second substrate. There is provided a substrate bonding apparatus including a transfer robot that is unloaded from the apparatus and loaded into a heating apparatus.

  According to the fourth aspect of the present invention, the heating step of heating at least one of the first substrate and the second substrate, and the positional relationship between the aligned first substrate and second substrate are maintained. And a control step for controlling the temperature of at least one of the substrate and the second substrate.

  According to the fifth aspect of the present invention, a heating step of heating at least one of the first substrate and the second substrate, a first substrate generated by thermal deformation of at least one of the first substrate and the second substrate, and Before the mutual displacement of the second substrate satisfies a predetermined condition, the first substrate and the second substrate overlapped with each other with a pressurizing force that maintains a predetermined positional relationship between the first substrate and the second substrate. And a pressing step of pressing the two substrates.

  According to the sixth aspect of the present invention, the alignment step of aligning the first substrate and the second substrate, the heating step of heating at least one of the first substrate and the second substrate, and the aligned first step In order to maintain the positional relationship between one substrate and the second substrate, there is provided a method for manufacturing a stacked semiconductor device, comprising a control step of controlling the temperature of at least one of the first substrate and the second substrate.

  According to a seventh aspect of the present invention, an alignment step of aligning the first substrate and the second substrate, a heating step of heating at least one of the first substrate and the second substrate, and the first substrate Before the mutual displacement due to thermal expansion of at least one of the second substrate and the second substrate exceeds a predetermined threshold, the first substrate and the second substrate overlap each other with a pressurizing force that prevents the displacement of the first substrate and the second substrate. There is provided a method of manufacturing a laminated semiconductor device comprising a pressing step of pressing a first substrate and a second substrate.

  The above summary of the present invention does not enumerate all of the features of the present invention. A sub-combination of these feature groups can also be an invention.

1 is a schematic plan view of a substrate bonding apparatus 100. FIG. 2 is a perspective view of a substrate holder 201. FIG. 5 is a perspective view of a substrate holder 202. FIG. 3 is a schematic cross-sectional view of a laminated body 102. FIG. 2 is a schematic cross-sectional view of a heating device 300. FIG. 2 is a schematic cross-sectional view of a heating device 300. FIG. 2 is a schematic cross-sectional view of a heating device 300. FIG. 2 is a schematic cross-sectional view of a heating device 300. FIG. 2 is a schematic cross-sectional view of a heating device 300. FIG. 2 is a schematic cross-sectional view of a heating device 300. FIG. 2 is a schematic cross-sectional view of a heating device 300. FIG. 2 is a schematic cross-sectional view of a heating device 300. FIG. 3 is a schematic cross-sectional view of a laminated substrate 103. FIG. 3 is a graph schematically showing a temperature change of a laminated body 102. It is a graph which shows typically the temperature change of heater plates 332 and 362. FIG. 3 is a schematic cross-sectional view of a heating device 301. 3 is a schematic cross-sectional view of a heating device 302. FIG. 3 is a schematic cross-sectional view of a heating device 302. FIG. 3 is a schematic cross-sectional view of a heating device 302. FIG. 3 is a graph schematically showing a temperature change of a laminated body 102. 3 is a graph schematically showing a temperature change of a laminated body 102. 3 is a schematic cross-sectional view of a heating device 303. FIG. 2 is a schematic cross-sectional view of a heating device 304. FIG. It is a typical sectional view of heating device 305.

  The present invention will be described through embodiments of the invention. The following embodiments do not limit the invention according to the claims. Not all combinations of features described in the embodiments are essential for the solution of the invention.

  FIG. 1 is a schematic plan view of the substrate bonding apparatus 100. The substrate bonding apparatus 100 includes a housing 110, substrate cassettes 120 and 130 and a control unit 170 disposed on the outer surface of the housing 110, a transport robot 140, an aligner 150, and a heating device 300 disposed in the housing 110. With.

  One substrate cassette 120 stores a substrate 101 to be bonded. The substrate 101 may be a dielectric substrate such as a glass substrate or a sapphire substrate in addition to a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer. Further, the substrate 101 may be one on which elements, circuits, terminals, and the like are formed. Further, the substrate 101 may be a laminated substrate that is already laminated and bonded.

  The other substrate cassette 130 stores the laminated substrate 103 produced by bonding the substrates 101 in the substrate bonding apparatus 100. The substrate cassettes 120 and 130 can be individually attached to and detached from the housing 110. Therefore, by using the substrate cassette 120, a plurality of substrates 101 can be carried into the substrate bonding apparatus 100 at a time. Further, by using the substrate cassette 130, a plurality of laminated substrates 103 can be unloaded from the substrate bonding apparatus 100 at a time.

  The transfer robot 140 transfers the substrate 101 from the substrate cassette 120 to the aligner 150 inside the housing 110. Further, the transfer robot 140 transfers the laminated body 102 formed by stacking the substrates 101 by the aligner 150 to the heating apparatus 300. Further, the transfer robot 140 transfers the laminated substrate 103 formed by bonding the substrates 101 in the heating device 300 to the substrate cassette 130 from the heating device 300.

  The aligner 150 has a pair of stages each holding the substrate 101. The pair of substrates 101 are aligned with each other by relatively moving the stage while holding the substrate 101 on each of the pair of stages. Further, the aligned substrates 101 are overlapped with each other to form a stacked body of the substrates 101. In the substrate bonding apparatus 100, at least the inside of the aligner 150 is temperature-controlled at a temperature close to room temperature. Thereby, the accuracy of alignment of the substrate 101 in the aligner 150 is maintained.

  The heating device 300 is formed inside the heat insulating container 310 and heats the loaded substrate 101 or the laminated body including the substrate 101 under the control of the control unit 170. The heat insulating container 310 has an opening that is opened and closed by the shutter 320. Thereby, the heat which the heating apparatus 300 generate | occur | produces is interrupted | blocked, and it prevents that the alignment precision of the aligner 150 falls. Note that the heating device 300 may be a heating and pressing device that pressurizes the substrate 101 or the stacked body including the substrate 101 that is carried in while heating. Further, the inside of the heat insulating container 310 with the shutter 320 closed may be deaerated for the purpose of preventing thermal oxidation or the like of the substrate 101, and the substrate 101 may be heated and pressurized in a vacuum environment.

  Since the substrate 101 is thin and fragile, the substrate 101 may be handled inside the substrate bonding apparatus 100 while being adsorbed by the substrate holder 200 having higher strength. When the substrate 101 is handled while being held by the substrate holder 200, the laminate formed after alignment in the aligner 150 may include the substrate holder 200 that sandwiches the stacked substrates 101. When the stacked body includes the substrate holder 200, the substrate holder 200 is also heated together with the substrate 101 in the heating device 300. Further, when the stacked body 102 including the substrate 101 is pressed in the heating apparatus 300, the substrate holder 200 is also pressed.

  FIG. 2 is a perspective view of a substrate holder 201 that holds one of a pair of substrates 101 to be joined. In the drawing, the substrate holder 201 is shown in a state in which the holding surface 212 for holding the substrate 101 is directed downward from the lower side in the drawing. The substrate holder 201 includes a holding part 210, a frame part 220, and a connecting part 230.

  The holding part 210 has a holding surface 212, an embedded electrode 214, and a coupling part 216, and is integrally formed of a hard material such as AlN ceramics. The holding surface 212 is arranged on the lower surface in the drawing in the generally disc-shaped holding portion 210 as a whole. The holding surface 212 is formed flat with high accuracy and forms a circle that is slightly larger than the substrate 101.

  The pair of embedded electrodes 214 are arranged with the entire holding surface 212 divided into two parts, and are embedded in the holding unit 210 while being insulated from each other, thereby forming an electrostatic chuck in the holding unit 210. When an adsorption voltage is applied to the embedded electrode 214, the substrate 101 is adsorbed to the insulating holding surface 212 by electrostatic force.

  The electrostatic force generated by the electrostatic chuck including the embedded electrode 214 acts on the front and back of the holding unit 210. Therefore, when an adsorption voltage is applied to the embedded electrode, an electrostatic force also acts on the upper surface of the holding unit 210 that is the back surface of the holding surface 212 in the drawing.

  The coupling portions 216 protrude from the peripheral edge in the radial direction of the holding surface 212 and are arranged at a plurality of locations on the outer periphery of the holding surface 212. The coupling portion 216 is formed integrally with the holding portion 210 and is used as a bracket when a frame portion 220 described later is fixed to the holding portion 210.

  A plurality of external electrodes 228 are arranged on the same side as the holding surface 212 in a part of the flange portion 222. Each of external electrodes 228 is electrically coupled to any of buried electrodes 214. Thereby, an adsorption voltage can be applied from the outside of the substrate holder 201 to the embedded electrode 214 through the external electrode 228.

  The substrate holder 201 as described above applies the adsorption voltage to the embedded electrode 214 through the external electrode 228 while the substrate 101 such as a semiconductor wafer is placed on the holding surface 212 of the holding unit 210, thereby holding the substrate 101 on the holding surface. Adsorb to 212. Thereby, the thin and fragile substrate 101 can be safely handled integrally with the substrate holder 201 having high rigidity and strength.

  FIG. 3 is a perspective view of the substrate holder 202 that holds the other of the pair of substrates 101 to be joined. Elements that are common to the substrate holder 201 already described are denoted by the same reference numerals, and redundant description is omitted.

  The substrate holder 202 is shown in a state where the holding surface 212 for holding the substrate 101 is directed upward in the figure and is looked down obliquely from above. The substrate holder 202 has a holding part 210, a frame part 220 and a connecting part 230. In the substrate holder 202, the holding unit 210 has the same structure as the holding unit 210 of the substrate holder 201, and includes a holding surface 212, an embedded electrode 214, and a coupling unit 216.

  The holding unit 210 has the same structure as the holding unit 210 of the substrate holder 201 except that the holding surface 212 is arranged on the upper surface in the drawing. Therefore, when an adsorption voltage is applied to the embedded electrode 214, the substrate 101 can be made the holding surface 212 by electrostatic force. In the substrate holder 202 as well, when an adsorption voltage is applied to the embedded electrode, an electrostatic force acts also on the lower surface in the drawing of the holding unit 210 that is the back surface of the holding surface 212.

  In the substrate holder 202, a plurality of external electrodes 228 are arranged on the side opposite to the holding surface 212 in a part of the flange portion 222. Each of external electrodes 228 is electrically coupled to any of buried electrodes 214. Thereby, an adsorption voltage can be applied from the outside of the substrate holder 201 to the embedded electrode 214 through the external electrode 228.

  The substrate holder 202 as described above applies the adsorption voltage to the embedded electrode 214 through the external electrode 228 while the substrate 101 such as a semiconductor wafer is placed on the holding surface 212 of the holding unit 210, thereby holding the substrate 101 on the holding surface. Adsorb to 212. Thereby, the thin and fragile substrate 101 can be safely handled integrally with the substrate holder 201 having high rigidity and strength.

  FIG. 4 is a schematic cross-sectional view of the stacked body 102. The stacked body 102 is formed by aligning and overlapping a pair of substrates 101 held by the substrate holders 201 and 202 by the aligner 150 of the substrate bonding apparatus 100. In the stacked body 102, the pair of substrate holders 201 and 202 are adsorbed to each other by the adsorbing unit 234 and the adsorbed unit 236, and the state where the substrate 101 is aligned in the aligner 150 is maintained.

  However, in the stacked body 102 at the stage of being unloaded from the aligner 150, the pair of substrates 101 are merely overlapped, and are not bonded to each other, or a part or the whole is bonded with a weak force. When the stacked body 102 is heated and pressurized in the heating device 300 of the substrate bonding apparatus 100, the pair of substrates 101 are bonded to each other to form an integrated stacked substrate 103.

  In other words, in the substrate bonding apparatus 100, the positional relationship between the pair of substrates 101 aligned in the aligner 150 may be shifted before being bonded in the heating apparatus 300. One of the causes of such positional deviation of the substrates 101 is a difference in thermal expansion amount between the substrates 101.

  That is, the laminate 102 carried into the heating device 300 is heated from the outside in the thickness direction by at least one of the heater plates 332 and 362. For this reason, the lower substrate 101 in the drawing in the laminate 102 is affected by the heating by the lower heater plate 332 in the drawing earlier than the other substrate 101. Further, the upper substrate 101 in the drawing in the laminate 102 is affected by the heating by the upper heater plate 362 in the drawing earlier than the other substrates.

  For this reason, when a temperature difference arises between a pair of board | substrates 101 which form the laminated body 102, and the thermal expansion coefficient of a pair of board | substrates 101 is equivalent, the heat | fever of the surface direction of a pair of board | substrate 101 and thickness direction is carried out. A difference occurs in the amount of deformation. Here, the thermal deformation in the surface direction includes deformation due to thermal expansion and thermal contraction along the surface direction of the substrate 101. The thermal deformation in the thickness direction includes deformation due to thermal expansion and contraction along the thickness direction of the substrate 101 and bending deformation of the substrate 101.

  For this reason, at least one of the positional relationship in the surface direction and the positional relationship in the thickness direction of the substrate 101 aligned in the aligner 150 may be shifted due to heating in the heating device 300. Further, when the thermal expansion coefficients of the pair of substrates 101 are not equal, even if there is no temperature difference, the amount of thermal deformation of the pair of substrates 101 is different, and the surface direction and thickness direction of the pair of substrates 101 are different. A shift occurs in at least one of the positional relationships.

  When the positional relationship between the pair of substrates 101 aligned by the aligner 150 is shifted, the positional relationship between electrodes or terminals provided corresponding to each of the pair of substrates 101 changes without being maintained. Further, due to the difference in the amount of thermal deformation between the pair of substrates 101, for example, between structures having a predetermined positional relationship such as a lens provided on one substrate of an image sensor and a photodiode provided on the other substrate. The positional relationship changes without being maintained.

  When the positional relationship between the aligned pair of substrates 101 is not maintained because the difference in the amount of thermal deformation between the pair of substrates 101 exceeds a predetermined threshold, that is, the pair of substrates 101 that are aligned and contacted by the aligner 150. If the amount of contact between the electrodes or terminals is less than or equal to a predetermined size or is separated without contact, the electrodes or terminals that are aligned by the aligner 150 and at least partially face each other are partially When the position is shifted without facing each other, when the substrate 101 is deformed in the thickness direction so that the electrodes or terminals of the pair of substrates 101 do not come into contact with each other by pressurization in the subsequent pressurization step, and light emitted from the lens Is not incident on the photodiode, a desired function is not ensured in the stacked semiconductor device formed by the pair of bonded substrates 101, and the yield is low. To.

  Note that although it is possible to balance the temperature between the pair of substrates 101 by taking time before heating the substrate 101, in that case, the amount of time required for the heating increases, Throughput decreases. Note that the amount of contact between the electrodes or terminals of the pair of substrates 101 described above is determined based on the size of the end surfaces of the electrodes or terminals and the alignment accuracy of the aligner 150 or the bonding accuracy of the substrate bonding apparatus 100.

  Therefore, when the substrate 101 is bonded in the heating apparatus 300, it is preferable that the difference in the amount of thermal deformation between the pair of substrates 101 to be finally bonded by pressing or the like is smaller than a predetermined value. Conversely, even if the pair of substrates 101 is displaced due to the difference in the amount of thermal deformation between the pair of substrates 101, the size thereof is within a range where the electrodes of the pair of substrates 101 are in contact with each other without being separated, There may be a difference in the amount of thermal deformation between the pair of substrates 101 as long as the electrodes are within a range in which the electrodes partially face each other. Note that after the pressure applied to the stacked body 102 is increased to some extent, even if one of the substrates 101 expands or contracts, one of the substrates 101 does not shift with respect to the other.

  Further, even when the temperature of the substrate 101 finally becomes equal, if the thermal history of the substrate 10 due to thermal deformation is different, the alignment may be shifted. Therefore, it is preferable to avoid the temperature difference between the substrates 101 from becoming extremely large even in the process from when the stacked body 102 is carried into the heating apparatus 300 to joining.

  Note that the stacked body 102 processed in the heating apparatus 300 is not limited to the illustrated structure. For example, three or more substrates 101 may be overlapped between the substrate holders 201 and 202. In addition, one or both of the substrates 101 stacked between the substrate holders 201 and 202 may be a stacked substrate 103 that is already manufactured by stacking a plurality of substrates. Furthermore, the substrate holders 201 and 202 may be removed, and the substrate 101 may be heated and pressurized in a state where it is overlapped.

  5 and 6 are schematic cross-sectional views of the heating device 300 alone. FIG. 5 is a cross-sectional view taken along a side wall having a carry-in port 312 opened and closed by a shutter 320, which is indicated by B in FIG. FIG. 6 shows a cross-sectional view taken along the side wall not having the carry-in port 312, which is indicated by the symbol A in FIG. 5.

  The heating apparatus 300 includes a temporary table 314 formed on the inner surface of the heat insulating container 310, and a lower stage 330 and an upper stage 360 disposed inside the heat insulating container 310. The temporary placement table 314 is formed to protrude inward from the inner surface of the side wall of the heat insulating container 310.

  The temporary table 314 has an upper surface that is substantially the same height as the lower surface of the stacked body 102 that is carried by the transport robot 140 through the carry-in port 312 where the shutter 320 is opened. However, a space is provided between the upper surface of the temporary placement table 314 and the lower side of the carry-in entrance 312 so that the transfer robot 140 can be extracted. Thereby, the transfer robot 140 can leave the loaded stacked body 102 on the temporary placement table 314 and exit from the heat insulating container 310.

  In the heating device 300, the upper stage 360 is fixed to the ceiling surface of the heat insulating container 310 at the top. A heater plate 362 is disposed on the lower surface of the upper stage 360. The heater plate 362 generates heat when electric power is supplied from the outside. Note that the lower surface of the heater plate 362 is disposed at a position higher than the carry-in port 312.

  In the heating apparatus 300, the lower stage 330 is disposed on the bottom surface of the heat insulating container 310 via the actuator 340. A heater plate 362 is disposed on the upper surface of the lower stage 330. The heater plate 362 generates heat when electric power is supplied from the outside.

  Due to the operation of the actuator 340, the lower stage 330 and the heater plate 332 are lowered to a position where the upper surface of the heater plate 362 is lower than the upper surface of the temporary table 314. Further, by the operation of the actuator 340, the lower stage 330 and the heater plate 332 rise to a height at which the stacked body 102 can be pressed between the heater plate 362 on the lower stage 330 and the heater plate 362 of the upper stage 360. .

  Further, the lower stage 330 includes a plurality of push-up pins 350 as support members that can move up and down with respect to the lower stage 330 along the side surface of the lower stage 330. Three or more push-up pins 350 are arranged along the periphery of the lower stage 330 and the heater plate 332.

  When the lower stage 330 is lowered to a predetermined position, the upper end of the push-up pin 350 is in a position lower than the upper surface of the temporary table 314 inside the through hole provided in the temporary table 314. When the actuator 340 operates to raise the lower stage 330, the push-up pin 350 also rises together with the lower stage 330.

  Each push-up pin 350 is provided so as to be displaced relative to the heater plate 332 while being urged upward by a spring 352 in the drawing. The urging force of the spring 352 has a magnitude that maintains the stretched state against the weight of the stacked body 102, but when the stacked body 102 is pressed against the upper stage 360 by driving of the actuator 340, the lower stage 330. It is so small that it contracts by the force received from the upper stage 360 with further raising of the angle.

  FIG. 7 is a schematic cross-sectional view of a heating device 300 that operates in the substrate bonding apparatus 100. This figure is shown by the same cross section as FIG.

  As illustrated, the laminate 102 formed in the aligner 150 is carried into the heating apparatus 300 from the carry-in entrance 312 where the shutter 320 is opened by the carrying robot 140. The transfer robot 140 carries the stack 102 at a position higher than the temporary table 314.

  When the upper and lower heater plates 332 and 362 are already heated at the stage of carrying the laminated body 102, the heating of the laminated body 102 starts from the point when the laminated body 102 enters the heating device 300. . Here, if the temperature of the lower substrate 101 heated by the lower heater plate 332 and the temperature of the upper substrate 101 heated by the upper heater plate 362 are different, the stacked body 102 has a thickness direction difference. There may be a difference in the amount of thermal deformation between the pair of substrates 101 stacked in the stacked body 102 due to temperature distribution.

  If the difference in the amount of thermal expansion between the stacked substrates 101 exceeds a critical value determined according to the friction coefficient of the substrate 101, the stacked substrates 101 may be misaligned. The difference in heating temperature due to radiant heat according to the distance between the heater plates 332 and 362 and the laminate 102 is also one of the factors that cause a difference in the amount of thermal deformation. Therefore, if the thermal expansion coefficients of the pair of substrates 101 are equal, When the stacked body 102 is carried into the apparatus 300, it is preferable that the stacked body 102 is made to enter a position where the distance from the upper and lower heater plates 332 and 362 to the stacked body 102 becomes equal.

  However, for example, a part of the lower surface of the loaded laminate 102 is covered with the fingers of the transfer robot 140, so even if the distance from the upper and lower heater plates 332 and 362 to the laminate 102 is equal, the lower The radiant heat reaching the lower surface in the drawing of the laminate 102 from the heater plate 332 on the side is less than the radiant heat reaching the upper surface in the drawing of the laminate 102 from the upper heater plate 362. Therefore, for the purpose of compensating for the difference between the upper and lower radiant heatings, a correction may be made such that the position where the stacked body 102 is carried in is closer to the lower heater plate 362.

  FIG. 8 is a schematic cross-sectional view of the heating apparatus 300, and shows the next stage after the stage shown in FIG. This figure is shown by the same cross section as FIG.

  As illustrated, the transfer robot 140 leaves the heating apparatus 300 with the stacked body 102 placed on the temporary table 314. Thereby, the control part 170 of the board | substrate bonding apparatus 100 can prevent the leakage of the heat | fever with respect to the exterior of the heating apparatus 300 which closes the entrance 312 with the shutter 320. FIG.

  FIG. 9 is a schematic cross-sectional view of the heating apparatus 300, and shows a stage subsequent to the stage shown in FIG. This figure is shown by the same cross section as FIG.

  In the illustrated stage, the lower stage 330 is driven by the actuator 340 and starts to rise. The push-up pin 350 also rises together with the lower stage 330, and eventually, on the lower surface of the stacked body 102, comes into contact with the frame portion 220 of the substrate holder 202 on the outer side in the radial direction from the outer edge of the substrate 101, thereby lifting the stacked body 102. In this way, the push-up pin 350 forms a support member for the stacked body 102. As a result, the stacked body 102 rises toward the upper stage 360.

In the course of the above-mentioned operation, the heater plate 332 of the lower stage 330, the distance D ₁ of the lower surface of the stack 102 is progressively shorter. Therefore, with respect to the distance _{D 2} between the heater plate 362 of the upper stage 360 and the laminate 102 top, towards the distance _{D 1} of the between the heater plate 332 and the stack 102 lower surface of the lower stage 330 is shortened . As a result, the heating of the lower surface of the laminate 102 by the radiant heat of the heater plate 332 of the lower stage 330 is greater than the heating of the upper surface of the laminate 102 by the radiant heat of the upper heater plate 362.

  However, the stacked body 102 is floated from the lower stage 330 by the push-up pins 350. For this reason, heating of the lower surface of the laminated body 102 due to the radiant heat of the lower heater plate 332 is suppressed, and the difference in heating temperature between the upper and lower heater plates 332 and 362 becomes limited. In this way, the push-up pin 350 forms a heating suppression unit that suppresses heating of the stacked body 102.

  FIG. 10 is a schematic cross-sectional view of the heating apparatus 300, and shows a stage subsequent to the stage shown in FIG. This figure is shown by the same cross section as FIG.

In the illustrated stage, the lower stage 330 is further raised. For this reason, the distance D ₂ between the lower surface of the heater plate 362 of the upper stage 360 and the upper surface of the multilayer body 102 is shorter than the distance D ₁ between the lower heater plate 332 and the lower surface of the multilayer body 102. Therefore, in the illustrated stage, the temperature of the upper surface of the laminate 102 heated by the radiant heat of the heater plate 362 of the upper stage 360 is higher than the temperature of the lower surface of the laminate 102 heated by the radiant heat of the heater plate 332 of the lower stage 330. Get higher.

  FIG. 11 is a schematic cross-sectional view of the heating apparatus 300, showing the next stage after the stage shown in FIG. This figure is shown by the same cross section as FIG.

  In the illustrated stage, the lower stage 330 is further raised. For this reason, the upper surface of the laminated body 102 is in contact with the lower surface of the heater plate 362 of the upper stage 360. Thereby, the heating of the laminated body 102 by the lower surface of the heater plate 362 of the upper stage 360 is changed from radiant heat to conduction heat.

  Further, since the push-up pin 350 is biased upward by the spring 352, the stacked body 102 is pressed against the upper heater plate 362. Thereby, heating of the upper surface of the laminated body 102 by the upper heater plate 362 is promoted, and the temperature increase rate of the upper surface of the laminated body 102 is increased. As described above, the push-up pin 350 and the spring 352 also function as a heating promoting portion for the upper surface of the stacked body 102.

  FIG. 12 is a schematic cross-sectional view of the heating apparatus 300, and shows a stage subsequent to the stage shown in FIG. This figure is shown by the same cross section as FIG.

  In the illustrated stage, the lower stage 330 rises against the biasing force of the spring 352, and the upper surface of the heater plate 332 of the lower stage 330 is in contact with the lower surface of the stacked body 102. Therefore, the heating of the stacked body 102 by the upper surface of the heater plate 332 of the lower stage 330 is also switched from radiant heat to conduction heat. Thereby, the heating rate of the laminated body 102 due to the heating of the heater plates 332 and 362 becomes substantially equal on both the upper surface and the lower surface of the laminated body 102.

  Subsequently, the actuator 340 is further operated to strongly pressurize the stacked body 102 that has already been heated between the lower stage 330 and the upper stage 360. Further, by maintaining the state in which the stacked body 102 is heated and pressurized until a predetermined time elapses, the pair of substrates 101 stacked in the stacked body 102 are bonded to each other.

  FIG. 13 is a schematic cross-sectional view of the multilayer substrate 103. As described above, by heating and pressing the stacked body 102, the pair of substrates 101 that were only overlapped at the beginning become an integrated stacked substrate 103. Therefore, in the laminated body 102 carried out from the heating apparatus 300, the pair of substrate holders 201 and 202 and the laminated substrate 103 can be separated. In the substrate bonding apparatus 100, the laminated substrate 103 separated from the laminated body 102 is accumulated in the substrate cassette 130 by the transfer robot 140.

  FIG. 14 is a graph showing a temperature change of the laminated body 102 in the heating apparatus 300 that operates as described above. In the drawing, the temperature of the upper surface of the upper substrate holder 201 in the stacked body 102 is indicated by a solid line, and the temperature of the lower surface of the lower substrate holder 202 is indicated by a dotted line.

As shown, the initial term X ₁ which the laminate 102 is carried into the heating device 300, as described with reference to FIG. 9, the direction of spacing D ₁ of the stack 102 lower surface and the heater plate 332 laminate 102 shorter than the distance _{D 2} of the top surface and the heater plate 362. Therefore, if the thermal expansion coefficient of the pair of substrates 101 are equal, in a period X _1, fast temperature rise of the lower substrate holder 202, thermal deformation of the lower substrate 101 of the laminate 102 The amount of thermal deformation of the upper substrate 101 becomes larger.

The subsequent period X _2, as the lower stage 330 is increased, as described with reference to FIG. 10, the laminate 102 upper surface in close proximity to the heater plate 362, heating rate of the upper substrate holder 201 is gradually To rise. For this reason, the rate of temperature increase of the upper substrate holder 201 is gradually increased. However, the temperature rise of the lower substrate holder 202 is preceded. Therefore, even in the period X _2, is still large amount of thermal deformation of the lower substrate 101 than the thermal deformation of the upper substrate 101 of the stack 102.

However, as shown in FIG. 11, a period X ₃ immediately before the laminate 102 upper surface in contact with the upper side of the heater plate 362, the distance D ₂ between the upper substrate holder 201 and the upper heater plate 362, the lower Since the temperature changes so as to be narrower than the distance D ₁ between the upper substrate holder 202 and the lower heater plate 332, the temperature increase rate of the upper substrate 101 rapidly increases, and the amount of thermal deformation of the upper substrate 101 Increases rapidly. Eventually, the timing T ₁ of the following period X _3, with temperature and is equilibrium temperature and an upper substrate holder 201 of the lower substrate holder 202, thermal deformation of the pair of substrates 101 become equal.

Therefore, if both of the upper and lower heater plates 332 and 362 abut on the laminated body 102 as shown in FIG. 12 at the timing T ₁ , the thickness inside the laminated body 102 in the subsequent period X ₄ . The entire laminate 102 can be heated and pressurization can be started without the difference in the amount of thermal deformation in the direction exceeding a predetermined value. Accordingly, it is possible to prevent the positional shift caused by the temperature difference between the pair of substrates 101 forming the stacked body 102 and to form the stacked substrate 103 in a state where the aligner 150 is aligned with high accuracy. Note that by taking the time for heat to spread to the laminated body 102 before the pressurization of the laminated body 102 is started, the temperature of the entire laminated body 102 can be made substantially uniform, and the difference in the amount of thermal deformation can be sufficiently eliminated.

Incidentally, after the laminate 102 has been heated to the target temperature to a predetermined further while maintaining the target temperature, by pressurizing the laminate 102 over a period X ₅ which between predetermined heating pressurization has elapsed, A pair of substrates 101 are joined. Further, after the period X ₅ has elapsed, the laminate 102 comprising a multilayer substrate 103, after cooling to a predetermined pre-cooling temperature may be carried out a stack 102 from the heating device 300.

  FIG. 15 is a graph showing temperature changes of the heater plates 332 and 362 in the heating apparatus 300. In addition, “one cycle” in the figure indicates a period from when one laminated body 102 is carried in to when it is carried out. Therefore, FIG. 15 shows a temperature change when the process of heating and pressurizing the laminate 102 is repeated.

  As described above, in the heating device 300, the temperature difference between the upper surface and the lower surface of the stacked body 102 is corrected by the heating suppression unit and the heating promotion unit. For this reason, as shown in the figure, in the heating apparatus 300, the temperature of the heater plates 332 and 362 is the same as the period for cooling the laminated body 102 after the heating and pressurizing process and the heater plate 332 immediately after the laminated body 102 is carried out. The temperature of the heater plates 332 and 362 can be kept near the heating target temperature except for the period when the surface of 362 is exposed and the radiant heat increases. Therefore, the time required for heating and cooling the heater plates 332 and 362 can be omitted, and the throughput when the laminated substrate 103 is continuously manufactured can be improved.

  In the above example, the heating promotion part and the heating suppression part are formed using the push-up pin 350. However, in a single heating promotion part and a heating suppression part, the temperature difference of the upper surface and lower surface of the laminated body 102 may not be correct | amended completely. In such a case, the temperature difference may be corrected with high accuracy by using another heating suppression unit or heating promotion unit in combination.

  In this way, the heating apparatus 300 is provided that can join the substrates that are aligned and overlapped in the aligner 150 without lowering the alignment accuracy. The substrate bonding apparatus 100 provided with such a heating apparatus 300 can be used as a semiconductor device manufacturing method for manufacturing a semiconductor device having a laminated structure.

  FIG. 16 is a schematic cross-sectional view of another heating device 301. Except for the points described below, the illustrated heating device 301 has the same structure as the heating device 300 and can heat and pressurize the loaded laminate. Therefore, common elements are denoted by the same reference numerals, and redundant description is omitted. Moreover, FIG. 16 is shown by the same cross section as the heating apparatus 300 of FIG.

  The illustrated heating device 301 is different from the heating device 300 in that the temporary mounting table 314 is not provided. In the heating device 301, the stacked body 102 carried in by the transport robot 140 is delivered to the push-up pin 350 instead of the temporary table 314. Thereby, the time required for delivery from the temporary table 314 to the push-up pin 350 is shortened, and a heating suppression unit is formed that shortens the time when heating is unbalanced with respect to the front and back of the laminate 102.

  FIG. 17 is a schematic cross-sectional view of still another heating device 302. Except for the points described below, the illustrated heating device 302 has the same structure as the heating device 300, and can heat and pressurize the loaded laminated body. Therefore, common elements are denoted by the same reference numerals, and redundant description is omitted. Moreover, FIG. 17 is shown by the same cross section as the heating apparatus 300 of FIG.

  The heating device 302 has a structure different from that of the heating device 300 in that a push-down pin 351 is provided on the upper stage 360. Further, the heating device 302 is similar to the heating device 301 in that the temporary table 314 is omitted.

  In the heating device 302, the upper stage 360 has a plurality of push-down pins 351 that can move up and down with respect to the upper stage 360 along the side surfaces thereof. Three or more push-down pins 351 are arranged along the periphery of the upper stage 360 and the heater plate 362.

  Each push-down pin 351 is urged downward by a spring 353 in the drawing. The spring 353 has substantially the same spring constant as the spring 352 of the push-up pin 350 provided on the lower stage 330. In such a heating device 302, the loaded stacked body 102 is directly supported by push-up pins 350 as in the heating device 301.

  FIG. 18 is a schematic cross-sectional view of the heating device 302 and shows the operation of the heating device 302. In the illustrated stage, the lower stage 330 is driven by the actuator 340 and starts to rise. The push-up pin 350 also rises with the lower stage 330. Thereby, the upper surface of the laminated body 102 contacts the lower end of the push-down pin 351.

  As already described, the push-up pin 350 provided on the lower stage 330 forms a heating suppression unit for the lower surface of the stacked body 102. Similarly, in the heating device 302, the push-down pin 351 provided on the upper stage 360 also forms a heating suppression unit for the upper surface of the stacked body 102.

Here, since the spring 352 of the push-up pin 350 and the spring 353 of the push-down pin 351 have the same spring constant, the amount of contraction of the push-up pin 350 and the push-down when the lower stage 330 is further raised. The amount of contraction of the pin 351 is equal. Therefore, the distance _{D 4} of the lower surface and the heater plate 332 of the stack 102, the distance _{D 3} of the upper surface and the heater plate 362 of the stack 102 is always equal maintained. Therefore, the heating of the laminated body 102 is balanced between the upper surface and the lower surface. This balance of heating is continued until the laminate 102 abuts on the upper and lower heater plates 332 and 362 as shown in FIG.

  FIG. 20 is a graph showing a temperature change of the laminated body 102 in the heating apparatus 300 that operates as described above. In the drawing, the temperature of the upper surface of the upper substrate holder 201 in the stacked body 102 is indicated by a solid line, and the temperature of the lower surface of the lower substrate holder 202 is indicated by a dotted line.

As shown in the figure, in the heating device 302, heating of the upper surface and the lower surface of the stacked body 102 is performed in the periods Y _3, Y ₄ and Y ₅ after the stacked body 102 is sandwiched between the push-up pins 350 and the push-down pins 351. Are equal. Therefore, the difference in the amount of thermal deformation of the substrate 101 in these periods Y _3, Y ₄ and Y ₅ does not exceed a predetermined value.

However, the laminate 102 occurs in time period Y ₁ and period Y ₂ immediately after being conveyed to the heating device 302, the difference in substrate 101 mutual thermal deformation amount due to difference of upper and lower surfaces of the temperature of the stack 102 Finally, it is carried over until the temperature of the laminated body 102 reaches a steady state. However, since the periods Y ₁ and Y _{2 in} which the difference in thermal deformation amount is short are short, the difference in the thermal deformation amount is eliminated in the short period Y ₆ immediately after the temperature rise of the substrate holders 201 and 202 becomes a steady state. Note that by taking the time for heat to spread to the laminated body 102 before the pressurization of the laminated body 102 is started, the temperature of the entire laminated body 102 can be made substantially uniform, and the difference in the amount of thermal deformation can be sufficiently eliminated.

  FIG. 21 is a diagram for explaining another operation of the heating device 302. In the heating device 302, the difference in temperature immediately after the carry-in is corrected by further providing a heating promoting portion.

The behavior of the heating device 302 in the initial periods Z ₁ , Z _2, and Z ₃ when the laminate 102 is carried into the heating device 302 is the same as that of the heating device 302 in the period periods Y ₁ , Y _2, and Y ₃ shown in FIG. It does not change with behavior. However, in the illustrated schedule, after both surfaces of the laminated body 102 are in contact with the heater plates 332 and 362 and before the pressurization is started, the electrostatic chuck of the upper substrate holder 201 is used to perform lamination. The body 102 is attracted to the upper heater plate 362. Thus, in the period Z ₅ immediately before starting pressurization, the temperature of the upper substrate holder 201 is rapidly increased.

  That is, as already described, the substrate holders 201 and 202 that form the stacked body 102 are provided with electrostatic chucks. Therefore, as shown in the figure, the electrostatic chuck of the upper substrate holder 201 is operated immediately after the stacked body 102 contacts the upper and lower heater plates 332 and 362. Since the electrostatic chuck also attracts the upper heater plate 362, the contact pressure of the upper surface of the laminate 102 to the heater plate 362 is increased. Thereby, the heating of the upper surface of the laminated body 102 can be promoted, and the temperature imbalance immediately after carrying in can be corrected. Thereby, the difference in the amount of thermal deformation between the substrates 101 is eliminated at an early stage. As described above, the control unit 170 can also control the temperature of the stacked body 102 including the substrate 101 by controlling an electrostatic chuck or the like that attracts the stacked body 102.

  In the example of FIG. 21, the example in which the electrostatic chuck of the upper substrate holder 201 is operated immediately after the stacked body 102 contacts the upper and lower heater plates 332 and 362 is shown. The timing for operating the electric chuck may be any time from when the upper substrate holder 201 comes into contact with the heater plate 362 to when pressurization is started.

  FIG. 22 is a schematic cross-sectional view of still another heating device 303. Except for the points described below, the illustrated heating device 303 has the same structure as the heating device 300, and can heat and pressurize the loaded laminated body. Therefore, common elements are denoted by the same reference numerals, and redundant description is omitted. 22 is shown by the same cross section as the heating device 300 of FIG.

  The illustrated heating device 303 includes a temporary table 315 that moves up and down, and has a structure different from that of the heating device 300 in that the stacked body 102 is supported by the temporary table 315 until just before being sandwiched between the heater plates 332 and 362. Further, instead of omitting the push-up pin 350 from the lower stage 330, it has a structure different from that of the heating device 300 in that a mechanism for interlocking the temporary placement table 315 and the lower stage 330 is provided.

  In the heating device 303, the temporary table 315 moves up and down vertically inside the heat insulating container 310. The temporary table 315 is urged upward by a spring 376 in the drawing. Further, a pulley 372 is provided on the lower surface of the temporary table 315.

  One end of the wire 374 hung on the pulley 372 is coupled to the bottom surface of the heat insulating container 310. Further, the other end of the wire 374 is coupled to the lower stage 330. As a result, when the lower stage 330 moves up and down, the temporary table 315 moves up and down with a movement amount that is half the amount of movement of the lower stage 330.

Thus, a laminate 102 carried in a state of being supported on the temporary placement table 315, while raising the lower stage 330, the distance D ₅ between the upper heater plate 362 and the stack 102 top, the lower heater plate 332 and the distance _{D 6} between the stack 102 lower surface, always equal. As a result, the temperature of the upper surface of the laminated body 102 and the temperature of the lower surface of the laminated body 102 become substantially equal, so that the difference in the amount of thermal deformation of the laminated substrate 101 is prevented from exceeding a predetermined value.

  FIG. 23 is a schematic cross-sectional view of still another heating device 304. Except for the points described below, the illustrated heating device 304 has the same structure as the heating device 300, and can heat and pressurize the loaded laminate. Therefore, common elements are denoted by the same reference numerals, and redundant description is omitted. Moreover, FIG. 23 is shown by the same cross section as the heating apparatus 300 of FIG.

  The heating device 304 includes a plurality of push-up pins 350 on the lower stage 330. The push-up pin 350 can be driven by an actuator 342 to change the protrusion amount with respect to the lower stage 330. Moreover, in the laminated body 102 heated and pressurized by the heating device 304, each of the substrate holders 201 and 202 includes temperature sensors 381 and 382, and the temperatures of the individual substrate holders 201 and 202 can be individually detected.

  Furthermore, the heating device 304 includes a heating control unit 380 that controls heating based on the temperatures detected by the temperature sensors 381 and 382. The heating control unit 380 controls the driving of the actuator 342 and the lower stage 330 based on the temperature detected by the temperature sensors 381 and 382, and at least one of the rising amount and the rising speed of the push-up pin 350 and the lower stage 330. At least one of the rising amount and the rising speed is changed. Thereby, the space | interval of the heater plates 332 and 362 and the laminated body 102 can be adjusted according to the temperature of the substrate holders 201 and 202, that is, the detected temperature of the temperature sensors 381 and 382. Accordingly, the heating device 304 can heat the stacked body 102 so that the difference in the amount of thermal deformation between the pair of substrates 101 forming the stacked body 102 does not exceed a predetermined value.

Thus, the distance D ₇ between the upper heater plate 362 and the upper surface of the stacked body 102 can always be kept equal to the distance D ₈ between the lower heater plate 332 and the lower surface of the stacked body 102. Therefore, the temperature of the upper surface of the stacked body 102 and the temperature of the lower surface of the stacked body 102 can be made substantially equal to prevent the difference in thermal deformation amount of the stacked substrates 101 from exceeding a predetermined value.

Note that the heating control unit 380 uses known information about the substrate 101 and the substrate holders 201 and 202 forming the stacked body 102 instead of monitoring the temperature or thermal expansion amount of the substrate 101 by the temperature sensors 381 and 382. The protrusion amount of the push-up pin 350 may be controlled by predicting appropriate values of the distances D ₇ and D ₈ . In addition, when the magnitudes of the distances D ₇ and D ₈ at which the difference in thermal deformation amount between the pair of substrates 101 does not exceed a predetermined value are known in advance, the push-up pins 350 are used without using the temperature sensors 381 and 382. The temperature of the pair of substrates 101 may be controlled by controlling at least one of the ascending amount and the ascending speed and at least one of the ascending amount and the ascending speed of the lower stage 330, respectively.

  In each of the heating devices 300, 301, 302, 303, and 304, a heating suppression unit that operates passively is taken as an example. However, active control may be performed by providing an actuator that moves the push-up pin 350, the push-down pin 351, and the temporary table 315.

  In the above example, the example in which the lower stage 330 and the upper stage 360 are provided with the heating suppression unit or the heating promotion unit has been mainly described. However, for example, when the transfer robot 140 exists in the same temperature environment as the heating devices 300, 301, 302, and 303, the transfer robot 140 that loads and unloads the stacked body 102 is replaced with the stacked body 102 and the heater plates 332 and 362. You may use as a heating suppression part or a heating promotion part which changes the space | interval.

  FIG. 24 is a schematic cross-sectional view of still another heating device 305. Except for the points described below, the illustrated heating device 305 has the same structure as the heating device 300, and can heat and pressurize the loaded laminate. Therefore, common elements are denoted by the same reference numerals, and redundant description is omitted. Moreover, FIG. 24 is shown by the same cross section as the heating apparatus 300 of FIG.

  The heating device 305 can change the temperature of the heater plates 332 and 362 individually and rapidly instead of including the push-up pin 350. Moreover, in the laminated body 102 heated and pressurized by the heating device 305, each of the substrate holders 201 and 202 has temperature sensors 381 and 382, and the temperatures of the individual substrate holders 201 and 202 can be individually detected.

  Furthermore, the heating device 305 includes a heating control unit 380 that individually controls the heating temperatures of the heater plates 332 and 362 based on the temperatures detected by the temperature sensors 381 and 382. Accordingly, the heating device 305 can heat the stacked body 102 so that the difference in thermal deformation amount between the pair of substrates 101 forming the stacked body 102 does not exceed a predetermined value.

  Therefore, the laminate 102 can be heated and pressurized without considering the distance between the laminate 102 and the heater plates 332 and 362, contact pressure, and the like. In addition, since it is possible to save the labor and time required to transfer the laminate 102 between the transfer robot 140, the push-up pins 350, and the temporary placement tables 314 and 315, the control of the substrate bonding apparatus 100 can be simplified and the throughput can be reduced. It can be improved.

  In addition, the heat transferred from a heating source such as the heater plates 332 and 362 causes a pair of aligned positions before the difference in thermal deformation between the surface direction and the thickness direction generated in the laminate 102 exceeds the predetermined threshold value. The laminate may be pressed with a lock pressure that maintains the positional relationship of the substrate 101 to avoid a shift due to a difference in the amount of thermal deformation that occurs between the substrates 101 during the heating process. In this case, it is possible to prevent the displacement in the thickness direction due to the bending deformation of the substrate 101 by pressing the substrate with a lock pressure that suppresses the bending deformation due to the heat of the substrate 101.

  In addition, since heat is transmitted between the pair of substrates 101 by applying a locking pressure to the pair of substrates 101, the temperature of the pair of substrates 101 can be made uniform. Thereby, when the thermal expansion coefficient of a pair of board | substrate 101 is equivalent, generation | occurrence | production of the difference of the deformation amount by thermal expansion between a pair of board | substrates 101 can be suppressed.

  Furthermore, a thermal barrier layer, a reflective layer, and the like that prevent heat conduction from the heater plates 332 and 362 are provided on the surface of the substrate holders 201 and 202 opposite to the holding surface 212 to eliminate the influence of low-level radiant heat. You may do it. Furthermore, in the above example, the case of heating exclusively has been described, but the heating imbalance may be corrected by cooling a part of the laminate.

  In the above-described embodiment, an example in which the pair of substrates 101 are bonded to each other using the substrate holders 201 and 202 has been described. However, the present invention may be applied when a pair of substrates 101 are bonded to each other without using the substrate holders 201 and 202. In the above-described embodiment, an example in which the pair of substrates 101 is made of a material having the same thermal expansion coefficient is shown, but a pair of substrates made of materials having different thermal expansion coefficients may be used. In this case, the distance between the upper and lower heater plates 332 and 362 and the pair of substrates 101 and the temperature of the heater plates 332 and 362 do not need to be controlled so that the temperatures of the pair of substrates 101 are equal to each other. A value corresponding to the material is set so that the difference in the amount of thermal deformation of the material does not exceed a predetermined value. Further, the drive of the push-up pin 350, the lower stage 330, and the like is controlled in accordance with the size and temperature of the interval corresponding to the material of the pair of substrates.

  As mentioned above, although this invention was demonstrated using embodiment, the technical scope of this invention is not limited to the range as described in the said embodiment. It will be apparent to those skilled in the art that various modifications or improvements can be added to the above-described embodiment. It is apparent from the scope of the claims that the embodiments added with such changes or improvements can be included in the technical scope of the present invention.

  The order of execution of each process such as operations, procedures, steps, and stages in the apparatus, system, program, and method shown in the claims, the description, and the drawings is particularly “before” or “prior to”. It should be noted that the output can be realized in any order unless the output of the previous process is used in the subsequent process. Regarding the operation flow in the claims, the description, and the drawings, even if it is described using “first”, “next”, etc. for convenience, it means that it is essential to carry out in this order. It is not a thing.

100 substrate bonding apparatus, 101 substrate, 102 laminated body, 103 laminated substrate, 110 housing, 120, 130 substrate cassette, 140 transport robot, 150 aligner, 170 control unit, 200, 201, 202 substrate holder, 210 holding unit, 212 Holding surface, 214 Embedded electrode, 216 Coupling part, 220 Frame part, 222 Flange part, 228 External electrode, 230 Connecting part, 234 Adsorption part, 236 Adsorbed part, 300, 301, 302, 303, 304, 305 Heating device, 310 Insulating container, 312 Loading port, 314, 315 Temporary table, 320 Shutter, 330 Lower stage, 332, 362 Heater plate, 340, 342 Actuator, 350 Push-up pin, 351 Push-down pin, 352, 353, 376 Spring, 360 Up Stage, 372 pulley, 374 wire, 380 Heating control unit, 381, 382 Temperature sensor

Claims (18)

A heating unit that heats at least one of the aligned first substrate and second substrate;
The first substrate and the second substrate are arranged such that a displacement between the first substrate and the second substrate due to thermal deformation of at least one of the first substrate and the second substrate does not exceed a threshold value. A controller for controlling the temperature of at least one of the substrates;
Equipped with a,
The heating unit includes a first heating unit that heats the first substrate, and a second heating unit that heats the second substrate, and the control unit includes the first heating unit and the second heating unit. A heating apparatus that changes a first interval between the first substrate and a second interval between the second heating unit and the second substrate .   The heating apparatus according to claim 1, wherein the control unit controls the temperature by suppressing heating of at least one of the first substrate and the second substrate.   The heating apparatus according to claim 1, wherein the control unit controls the temperature by promoting heating of at least one of the first substrate and the second substrate. 4. The control unit according to claim 1, wherein the control unit includes a support member that supports at least one of the first substrate and the second substrate and changes a distance between the one substrate and the heating unit . 5. The heating apparatus according to item 1 . The heating apparatus according to claim 4 , wherein the support member is displaced relative to the heating unit. The support member is in contact with a substrate holder that holds at least one of the first substrate and the second substrate outside the outer edge of the one substrate, and supports the one substrate. Item 6. The heating device according to Item 4 or 5 . 2. The control unit includes a transfer robot that carries at least one of the first substrate and the second substrate into the heating apparatus and changes a distance between the one substrate and the heating unit. The heating apparatus according to any one of 6 to 6 . The heating device according to any one of claims 1 to 7 , wherein the control unit includes an adsorption unit that adsorbs at least one of the first substrate and the second substrate. The suction unit, the disposed first substrate and a substrate holder for holding at least one of said second substrate, according to claim 8 including an electrostatic chuck for attracting said one substrate by an electrostatic force to the substrate holder The heating device according to 1. The heating device according to any one of claims 1 to 9 , wherein the control unit controls the temperature of at least one of the first substrate and the second substrate by changing a temperature of the heating unit. . The heating unit includes a first heating unit that heats the first substrate, and a second heating unit that heats the second substrate,
Wherein the control unit, either the spacing of the first heating portion to said first substrate, claims 1 to maintain equal and spacing of the second heating portion relative to the second substrate to Claim 10 The heating device according to one item. A heating unit that heats at least one of the superimposed first substrate and second substrate;
In order to prevent the positional deviation exceeding the threshold before the positional deviation between the first substrate and the second substrate due to thermal deformation of at least one of the first substrate and the second substrate exceeds the threshold. A pressure unit that pressurizes the first substrate and the second substrate with pressure;
A heating device comprising: A pressurizing unit that pressurizes the first substrate and the second substrate overlaid;
The heating unit, even after the pressing is pressurized the first substrate and the second substrate, according to claim 12 to continue heating of said first substrate and said second substrate Heating device. An alignment apparatus for aligning the first substrate and the second substrate with each other;
A heating device according to any one of claims 1 to 13 ,
A substrate bonding apparatus comprising: a transfer robot that unloads the first substrate and the second substrate from the alignment device and loads the first substrate and the second substrate into the heating device. Of the aligned first and second substrates , a heating step of heating the first substrate with a first heating unit and heating the second substrate with a second heating unit ;
The first substrate and the second substrate are arranged such that a displacement between the first substrate and the second substrate due to thermal deformation of at least one of the first substrate and the second substrate does not exceed a threshold value. A control stage for controlling the temperature of at least one of the substrates;
Equipped with a,
In the heating method, the controlling step changes a first interval between the first heating unit and the first substrate and a second interval between the second heating unit and the second substrate . A heating step of heating at least one of the superimposed first and second substrates;
In order to prevent the positional deviation exceeding the threshold before the positional deviation between the first substrate and the second substrate due to thermal deformation of at least one of the first substrate and the second substrate exceeds the threshold. A pressurizing step of pressurizing the first substrate and the second substrate with pressure;
A heating method comprising: An alignment step of aligning the first substrate and the second substrate;
Of the aligned first and second substrates , a heating step of heating the first substrate with a first heating unit and heating the second substrate with a second heating unit ; ,
The first substrate and the second substrate are arranged such that a displacement of the first substrate and the second substrate due to thermal deformation of at least one of the first substrate and the second substrate does not exceed a threshold value. A control stage for controlling the temperature of at least one of the substrates;
Equipped with a,
The control step includes changing a first interval between the first heating unit and the first substrate and a second interval between the second heating unit and the second substrate. Manufacturing method. An alignment step of aligning the superimposed first and second substrates;
A heating step of heating at least one of the first substrate and the second substrate;
In order to prevent the positional deviation exceeding the threshold before the positional deviation between the first substrate and the second substrate due to thermal deformation of at least one of the first substrate and the second substrate exceeds the threshold. A pressurizing step of pressurizing the first substrate and the second substrate with pressure;
A method of manufacturing a laminated semiconductor device comprising:

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