JP5569169B2 - Substrate bonding apparatus control method, substrate bonding apparatus, laminated semiconductor device manufacturing method, and laminated semiconductor apparatus - Google Patents

Description

  The present invention relates to a method for controlling a substrate bonding apparatus, a substrate bonding apparatus, a stacked semiconductor device manufacturing method, and a stacked semiconductor device.

Patent Document 1 discloses a substrate bonding apparatus that stacks two substrates on which circuits are formed so that electrodes to be bonded are in contact with each other, and bonds the two substrates while applying pressure and heating. Have been described. In addition, the board | substrate joining apparatus has proposed the apparatus structure which has a some heat pressurization part (refer patent document 2).
[Patent Document 1] JP 2009-49066 A [Patent Document 2] JP 2009-267233 A

  However, in the process of substrate bonding, due to the difference between the heating and pressurizing time and cooling time of the substrate, it is not possible to use all of the multiple heating and pressing parts provided for the entire substrate bonding process from heating and pressing to cooling. In many cases, it is not reasonable from the viewpoint of improving the throughput of the entire apparatus.

  In order to solve the above-described problem, in the first aspect of the present invention, in a state where a plurality of substrates are held, the plurality of substrates are heated to bond the substrates together, and the plurality of bonded substrates is a first cooling target. A control method for controlling a substrate bonding apparatus having a temperature adjusting unit that cools to a temperature, wherein the temperature adjusting unit is used to heat and bond a plurality of substrates, or a plurality of substrates that are already bonded A control method is provided that includes a determination step of determining whether to use cooling to one cooling target temperature and outputting information indicating the determination.

  In the second aspect of the present invention, a holding unit that holds a plurality of substrates, a heating unit that heats the plurality of substrates held by the holding unit to join the substrates together, and a plurality of bonded substrates as the holding unit The temperature adjusting unit having a cooling unit that cools to the first cooling target temperature while being held and the temperature adjusting unit are used to heat and bond the plurality of substrates, or the plurality of already bonded substrates are first used. There is provided a substrate bonding apparatus including a control unit that determines whether to use cooling to a cooling target temperature and controls a temperature adjustment unit based on the determination.

  According to a third aspect of the present invention, there is provided a method for manufacturing a laminated semiconductor device including bonding a substrate with the substrate bonding apparatus.

  In a fourth aspect of the present invention, a stacked semiconductor device manufactured by the above-described stacked semiconductor device manufacturing method is provided.

  It should be noted that the above summary of the invention does not enumerate all the necessary features of the present invention. In addition, a sub-combination of these feature groups can also be an invention.

It is a top view which shows typically the whole structure of the board | substrate bonding apparatus 100 which is one Embodiment. It is a front view which shows the structure of the temperature control furnace 240 typically. 3 is a cross-sectional view schematically showing a structure of a lower stage 320 of a temperature control furnace 240. FIG. 3 is a cross-sectional view schematically showing the structure of a lower stage 320 of the cooling chamber 250. FIG. It is a flow chat of the control method of the temperature control furnace 240 which is one Embodiment. A manufacturing method of a laminated semiconductor device is shown roughly.

  Hereinafter, the present invention will be described through embodiments of the invention, but the following embodiments do not limit the invention according to the claims. In addition, not all the combinations of features described in the embodiments are essential for the solving means of the invention.

  FIG. 1 is a plan view schematically showing the overall structure of a substrate bonding apparatus 100 according to an embodiment. The substrate bonding apparatus 100 includes a housing 102, an alignment unit 104, a bonding unit 106, and substrate cassettes 112, 114, and 116. The alignment unit 104 and the bonding unit 106 are provided inside the common housing 102.

  The substrate cassettes 112, 114, and 116 are detachably attached to the housing 102 outside the housing 102. The substrate cassettes 112, 114, and 116 accommodate the first substrate 122 and the second substrate 123 that are bonded in the substrate bonding apparatus 100. A plurality of first substrates 122 and second substrates 123 are collectively loaded into the substrate bonding apparatus 100 by the substrate cassettes 112, 114, and 116. Further, the first substrate 122 and the second substrate 123 bonded in the substrate bonding apparatus 100 are collected in a lump.

  The alignment unit 104 includes a pre-aligner 126, a stage device 140, a substrate holder rack 128 and a substrate removal unit 130, and a pair of robot arms 132 and 134, which are disposed inside the housing 102. The inside of the housing 102 is temperature-controlled so as to maintain substantially the same temperature as the room temperature of the environment where the substrate bonding apparatus 100 is installed. The alignment unit 104 transports the first substrate 122 and the second substrate 123 in the atmosphere.

  Since the pre-aligner 126 is highly accurate, the position of each first substrate 122 or the second substrate 123 is temporarily aligned so that the position of the first substrate 122 or the second substrate 123 is within the narrow adjustment range of the stage device 140. To do. Thereby, the stage apparatus 140 can position the position of the 1st board | substrate 122 and the 2nd board | substrate 123 reliably.

  The substrate holder rack 128 accommodates and waits for a plurality of upper substrate holders 124 and a plurality of lower substrate holders 125. The upper substrate holder 124 and the lower substrate holder 125 hold the first substrate 122 and the second substrate 123, respectively, in the alignment process and bonding process of the first substrate 122 and the second substrate 123.

  The stage device 140 aligns the positions of the electrodes to be bonded on the first substrate 122 and the second substrate 123 to be bonded and superimposes them. A heat insulating wall 145 and a shutter 146 are provided surrounding the stage device 140. The space surrounded by the heat insulating wall 145 and the shutter 146 is communicated with an air conditioner or the like, and the temperature is controlled, so that the alignment accuracy in the stage device 140 is maintained.

  The stage apparatus 140 includes a first stage 141, a second stage 142, and a control unit 148. The first stage 141 is fixed to the lower surface of the top plate of the stage device 140. The lower surface of the first stage 141 holds the upper substrate holder 124 by vacuum suction. The upper substrate holder 124 holds the first substrate 122 by electrostatic adsorption.

  The second stage 142 is disposed on the bottom plate of the stage device 140 so as to be movable in the XYZ direction so as to face the first stage 141. The second stage 142 has a tilt function. The upper surface of the second stage 142 holds the lower substrate holder 125 by vacuum suction. The lower substrate holder 125 holds the second substrate 123 by electrostatic adsorption.

  The control unit 148 controls the movement of the second stage 142. The controller 148 moves the second stage 142 and aligns the position of the second substrate 123 with respect to the first substrate 122 held on the first stage 141. The controller 148 can raise the second stage 142 so that the first substrate 122 and the second substrate 123 overlap each other. Thereafter, the first substrate 122 and the second substrate 123 sandwiched between the upper substrate holder 124 and the lower substrate holder 125 are temporarily fixed by a positioning mechanism. A combination of the upper substrate holder 124 and the lower substrate holder 125 and the first substrate 122 and the second substrate 123 sandwiched between them may be referred to as a “holder pair”.

  The substrate removing unit 130 separates the upper substrate holder 124 and the lower substrate holder 125 from the holder pair carried out from the bonding unit 106 and takes out the first substrate 122 and the second substrate 123. The bonded first substrate 122 and second substrate 123 may be referred to as a “laminated substrate”. The laminated substrate taken out from the upper substrate holder 124 and the lower substrate holder 125 is returned to and stored in one of the substrate cassettes 112, 114, 116 by the robot arms 134, 132 and the second stage 142. The upper substrate holder 124 and the lower substrate holder 125 separated from the laminated substrate are returned to the substrate holder rack 128 and stand by. The substrate removing unit 130 is disposed above the substrate holder rack 128.

  The first substrate 122 and the second substrate 123 to be loaded into the substrate bonding apparatus 100 are a single silicon wafer, compound semiconductor wafer, glass substrate, etc., in which elements, circuits, terminals, etc. are formed. It may be. Further, the loaded first substrate 122 and second substrate 123 may be laminated substrates that are already formed by laminating a plurality of wafers.

  Of the pair of robot arms 132, 134, the robot arm 132 disposed on the side closer to the substrate cassettes 112, 114, 116 is the first substrate 122 between the substrate cassettes 112, 114, 116, the pre-aligner 126 and the stage apparatus 140. The second substrate 123 is transported. On the other hand, the robot arm 134 disposed on the side far from the substrate cassettes 112, 114, 116 is between the stage device 140, the substrate holder rack 128, the substrate removing unit 130, and the load lock chamber 220, and the first substrate 122, the second substrate 122. The substrate 123, the upper substrate holder 124, and the lower substrate holder 125 are transferred.

  The robot arm 134 is also responsible for loading and unloading the upper substrate holder 124 and the lower substrate holder 125 with respect to the substrate holder rack 128. When holding the first substrate 122 on the first stage 141, the robot arm 134 first takes out one upper substrate holder 124 from the substrate holder rack 128 and places it on the second stage 142. The second stage 142 moves to the side closer to the substrate cassettes 112, 114, and 116. The robot arm 132 takes out the pre-aligned first substrate 122 from the pre-aligner 126 and places it on the upper substrate holder 124 on the second stage 142 for electrostatic adsorption.

  The second stage 142 moves again to the side far from the substrate cassettes 112, 114, 116. The robot arm 134 receives the upper substrate holder 124 that electrostatically attracts the first substrate 122 from the second stage 142, turns it over, and approaches the first stage 141. The first stage 141 holds the upper substrate holder 124 by vacuum suction.

  The robot arm 134 places the lower substrate holder 125 on the second stage 142. The robot arm 132 places and holds the second substrate 123 thereon. Thus, the surface of the second substrate 123 held on the second stage 142 on which the circuits and the like are formed is opposed to the surface of the first substrate 122 held on the first stage 141 and on which the circuits and the like are formed. Placed in.

  The joint unit 106 includes a heat insulating wall 108, a load lock chamber 220, a robot arm 230, a plurality of temperature control furnaces 240, a cooling chamber 250, and a control unit 280. The temperature control furnace 240 and the cooling chamber 250 may be referred to as “processing device”. The heat insulating wall 108 surrounds the joint portion 106 and blocks heat radiation to the outside of the joint portion 106. Thereby, the influence which the heat of the junction part 106 has on the alignment part 104 is suppressed. The inside of the bonding portion 106 is maintained in a constant vacuum state. Thereby, contamination and oxidation of the substrate carried into the bonding portion 106 can be suppressed.

  The robot arm 230 conveys the first substrate 122, the second substrate 123, the upper substrate holder 124, and the lower substrate holder 125 between the temperature control furnace 240, the cooling chamber 250, and the load lock chamber 220.

  The load lock chamber 220 connects the alignment unit 104 and the bonding unit 106. The load lock chamber 220 includes shutters 222 and 224 that open and close alternately on the alignment unit 104 side and the joint unit 106 side.

  When a holder pair composed of the first substrate 122, the second substrate 123, the upper substrate holder 124, and the lower substrate holder 125 is carried into the bonding portion 106 from the alignment portion 104, first, the shutter 222 on the alignment portion 104 side is opened. Then, the robot arm 134 carries the holder pair into the load lock chamber 220. Next, the shutter 222 on the alignment unit 104 side is closed, and the inside of the load lock chamber 220 is evacuated. When the degree of vacuum inside the load lock chamber 220 becomes the degree of vacuum on the joint 106 side, the shutter 224 on the joint 106 side is opened.

  Subsequently, the robot arm 230 unloads the holder pair from the load lock chamber 220 and loads it into one of the temperature control furnaces 240. The temperature control furnace 240 heats and pressurizes the holder pair while holding the holder pair, thereby bonding and bonding the first substrate 122 and the second substrate 123 together. The temperature control furnace 240 cools the holder pair to a predetermined temperature. Thereafter, the robot arm 230 unloads the holder pair from the temperature control furnace 240 and inserts it into the cooling chamber 250 for further cooling.

  The control unit 280 uses the plurality of temperature control furnaces 240 to heat and bond the holder pairs to cool to a predetermined temperature, or to cool the holder pairs after bonding to near room temperature. It is determined whether to use, and the temperature control furnace 240 is controlled based on the determination.

  When carrying out a holder pair from the junction part 106 to the alignment part 104, a series of operation | movement when carrying in to the junction part 106 from the alignment part 104 is performed in reverse order. Through a series of these operations, the holder pair can be carried into or out of the joint 106 without leaking the internal atmosphere of the joint 106 to the alignment section 104 side.

  In many areas in the substrate bonding apparatus 100, the robot arms 134, 230 and the first arm 122 are held with the upper substrate holder 124 holding the first substrate 122 or with the lower substrate holder 125 holding the second substrate 123. It is conveyed by the two stage 142. When the upper substrate holder 124 that holds the first substrate 122 or the lower substrate holder 125 that holds the second substrate 123 is transported, the robot arms 134 and 230 are arranged such that the upper substrate holder 124 or the lower substrate by vacuum adsorption or electrostatic adsorption. The holder 125 is sucked and held.

  FIG. 2 is a front view schematically showing the structure of the temperature control furnace 240. The temperature control furnace 240 includes a heat insulating chamber 300, an upper stage 310, a lower stage 320, and an elevating unit 330. The heat insulation chamber 300 accommodates the upper stage 310, the lower stage 320, and the elevating part 330 therein.

  The heat insulating chamber 300 has a heat insulating wall formed from a heat insulating material. As a result, when the holder pair is heated in the heat insulating chamber 300, heat radiation to the outside is blocked, and adverse effects on devices and equipment existing around the robot arm and the like can be prevented. The upper stage 310 is fixed to the top plate of the heat insulation chamber 300. Further, the base of the elevating unit 330 is fixed to the bottom plate of the heat insulating chamber 300. In order to prevent deformation of the holder pair by the reaction force of the apparatus when the holder pair is pressurized by the upper stage 310 and the lower stage 320, the heat insulating chamber 300 is formed of a highly rigid material.

  The upper stage 310 heats or cools the holder pair. The elevating unit 330 includes a cylinder 334 fixed to the base, and a piston 332 coupled to the cylinder. The piston 332 moves up and down by a control signal from the outside.

  The lower stage 320 is installed on the upper surface of the piston 332. The lower stage 320 can move up and down together with the piston 332. The lower stage 320 heats or cools the holder pair.

  FIG. 2 shows a state in which the holder pair is loaded in the temperature control furnace 240 and installed on the lower stage 320. When the piston 332 moves up after the holder pair is placed on the lower stage 320, the upper stage 310 and the lower stage 320 sandwich the holder pair.

  After the upper stage 310 and the lower stage 320 sandwich the holder pair, the temperature control furnace 240 drives the piston 332 according to the pressurization control signal, and the first substrate 122 and the lower substrate holder 125 through the upper substrate holder 124 and the lower substrate holder 125. A predetermined pressure is applied to the second substrate 123 and bonded. As a result, the first substrate 122 and the second substrate 123 are bonded. By pressurizing the first substrate 122 and the second substrate 123, the electrodes to be bonded can be uniformly contacted between the first substrate 122 and the second substrate 123, and uniform bonding can be realized.

  FIG. 3 is a cross-sectional view schematically showing the structure of the lower stage 320 of the temperature control furnace 240. The lower stage 320 includes a top plate 322, a heating unit 324, and a pressure control unit 326.

  The top plate 322 serves as a holding unit that holds the holder pair. Top plate 322 is a circular plate made of silicon carbide. The peripheral edge of the top plate 322 is screwed to the heating unit 324.

  The heating unit 324 includes a plurality of heater plates 401, 402, and 403 that are in contact with the surface of the top plate 322 opposite to the surface on which the holder pair is placed inside the cylindrical body. The heater plates 401, 402 and 403 heat the holder pair held by the top plate 322. The heater plates 401, 402, and 403 are made of a material having good heat conductivity, such as copper. The heater plates 401, 402, and 403 are supported and fixed by a frame 410 that is formed radially from a central axis that passes through the center of the top plate 322.

  Inside the heater plates 401, 402, and 403, an electric heater 404 is embedded and a cooling pipe 407 is in contact. Electric power is supplied to the electric heater 404 through a conductive wire 405. The conductive wire 405 is covered with a bead 406 formed of a material that can withstand high heat, for example, ceramic.

  The heater plates 401, 402, and 403 are heated by the electric heater 404 during the heating control and transmit the heat to the top plate 322. The heater plates 401, 402, and 403 are cooled by the cooling pipe 407 during the cooling control after the heating is finished. The cooled heater plates 401, 402, and 403 cool the pair of holders held on the top plate 322 via the top plate 322.

  The frame 410 is connected to and supported by one ends of the plurality of first support columns 411 and the second support columns 431. And the other end of each 1st support | pillar part 411 and the 2nd support | pillar part 431 is connected with the 1st pressure detection part 412 or the 2nd pressure detection part 432, respectively. Each first pressure detection unit 412 is installed on the surface opposite to the surface to which the first support column 411 is connected so as to be in contact with the outside of the hollow pressurization unit 501 of the pressure control unit 326. The first pressure detection unit 412 detects the pressure with which the hollow pressurization unit 501 presses the first support column 411. The first pressure detection unit 412 may be a load cell.

  Each of the second pressure detectors 432 is installed in contact with the lower plate serving as the main body of the pressure controller 326 on the surface opposite to the surface to which the second support column 431 is connected. The second pressure detection unit 432 detects the pressure at which the main body of the pressure control unit 326 presses the second support column 431. The second pressure detection unit 432 may be a load cell.

  The internal space of the heating unit 324 is divided into a heating space and a non-heating space by a heat shield plate 420 installed in parallel to the mounting surface of the holder pair of the top plate 322. The heat shield plate 420 does not transmit the heat of the heating space heated by the heater plates 401, 402, and 403 to the non-heating space where the hollow pressurization unit 501, the first pressure detection unit 412 and the like that are vulnerable to high temperatures are installed as much as possible. It is a partition plate that bears the function. The heat shield plate 420 is provided with a through hole through which the first support column 411 and the second support column 431 pass. That is, the 1st support | pillar part 411 and the 2nd support | pillar part 431 exist over heating space and non-heating space. The heat shield plate 420 is also provided with a through hole through which the conductive wire 405 passes.

  The hollow pressurizing unit 501 is a hollow pressure control unit. The inside of the hollow pressurizing unit 501 is filled with a fluid. Air, water, oil or the like is used as the fluid. The hollow pressurizing unit 501 adjusts the amount of fluid filled therein by controlling a valve 502 provided between the hollow pressurizing unit 501 and the supply pipe 503. The hollow pressurizing unit 501 can control the pressure of the internal fluid by adjusting the amount of fluid filled therein.

  The pressure of the internal fluid in the hollow pressurizing unit 501 is detected and monitored by the pressure sensor 436. For example, when an abnormal pressure exceeding an assumed range is detected, control for stopping pressurization can be performed.

  The hollow pressure part 501 may be a bag formed from a rubber sheet or the like. The hollow pressurizing unit 501 can be expanded or contracted by the amount of fluid inside to control the pressure with respect to the surface in contact with the plurality of first pressure detection units 412. Moreover, the hollow pressurization part 501 may be a box-like form in which the surface side in contact with the plurality of first pressure detection parts 412 is a deformation plate and the elevating part 330 side and the outer peripheral side are high rigidity plates. Even in such a form, if the inside is kept in an airtight bag shape, the internal pressure can be adjusted by controlling the fluid that enters and exits from the outside, and the pressure against the surface in contact with the first pressure detector 412 Can be controlled. In particular, when the amount of fluid that flows in and out through the valve 502 is adjusted in relation to the pressure that the pressure control unit 326 receives from the elevating unit 330, the surface in contact with the plurality of first pressure detection units 412 may be flattened. The peripheral portion can be made convex or the central portion can be controlled to be convex.

  The upper stage 310 of the temperature control furnace 240 has a structure in which the lower stage 320 is turned upside down. However, the upper stage 310 does not have to move up and down. The upper stage 310 and the lower stage 320 control the temperature and pressure with high accuracy to join and bond the first substrate 122 and the second substrate 123.

  FIG. 4 is a cross-sectional view schematically showing an example of the structure of the lower stage 620 in the cooling chamber 250. The cooling chamber 250 is different from the temperature control furnace 240 shown in FIG. 2 in the structure of the upper stage 310 and the lower stage 320. The cooling chamber 250 has the same structure as that of the temperature control furnace 240 shown in FIG.

  The cooling chamber 250 includes a top plate 622 and a cooling unit 628. The top plate 622 serves as a holding unit that holds the holder pair. Top plate 622 is a circular plate made of silicon carbide. The peripheral portion of the top plate 622 is screwed to the cooling unit 628.

  The cooling unit 628 has a refrigerant circulation path 627. A refrigerant is circulated through the refrigerant circulation path 627. Accordingly, the cooling unit 628 cools the holder pair held on the top plate 622 via the top plate 622. The refrigerant circulation path 627 may be a pipe or a groove. The cooling unit 628 is made of a material having good thermal conductivity such as copper and a large heat capacity for the purpose of increasing the cooling rate. In addition to cooling the holder pair, the cooling unit 628 may further include a heater in order to maintain the holder pair within a predetermined temperature.

  The cooling chamber 250 cools the holder pair while pressing the holder pair with the upper and lower stages. This enhances the contact between the stage and the holder pair and enhances the cooling effect. However, the pressure in the cooling process is much lower than the pressure at the time of substrate bonding by the temperature control furnace 240, for example, about 1/10, and does not need to be controlled with high accuracy. Therefore, the cooling chamber 250 does not need to have a pressurizing mechanism with high controllability like the pressure control unit 326. Therefore, the cooling chamber 250 can be manufactured at a much lower cost than the temperature control furnace 240. With the above-described configuration, the cooling chamber 250 holds the holder pair and cools the first substrate 122 and the second substrate 123 that are exclusively bonded.

  The substrate bonding apparatus 100 shown in FIG. 1 has four temperature control furnaces 240 and one cooling chamber 250. In the process of cooling the bonded first substrate 122 and second substrate 123, the cooling rate becomes slower and the cooling takes time as the temperature of the holder pair approaches room temperature. If heating and cooling are all left to the temperature control furnace 240, the rotation rate of the temperature control furnace 240 is low, and the overall throughput of the substrate bonding apparatus 100 is low. Therefore, by providing at least one cooling chamber 250 and entrusting the cooling process that takes time to the cooling chamber 250, the rotation rate of the temperature control furnace 240 can be increased and the throughput of the substrate bonding apparatus 100 can be increased. At the same time, the cost of the apparatus can be reduced.

  For example, when the bonding temperature for bonding the first substrate 122 and the second substrate 123 is 450 ° C., the holder pair is heated and pressurized to 450 ° C. by the temperature control furnace 240, and the first substrate 122 is kept warm. And the second substrate 123 are bonded to each other, and then cooled to the second cooling target temperature 200 ° C. Thereafter, the holder pair is unloaded from the temperature control furnace 240 by the robot arm 230, put into the cooling chamber 250, and further cooled to room temperature, which is the first cooling target temperature. By allowing the cooling chamber 250 to cool from a low cooling rate of 200 ° C. to room temperature, the rotation rate of the temperature control furnace 240 is increased, and the overall throughput of the substrate bonding apparatus 100 is increased. Here, a process in which the holder pair is heated to 450 ° C. and kept warm and then cooled to 200 ° C. may be referred to as a “heating process”, and a process of cooling from 200 ° C. to room temperature may be referred to as a “cooling process”. The “heating process” may not include a process of positive cooling.

  Since the substrate bonding apparatus 100 requires a heating process for bonding the substrates, at least one temperature control furnace 240 is dedicated to heating. That is, the one temperature control furnace 240 holds the holder pair and exclusively heats to a bonding temperature of 450 ° C. to bond the first substrate 122 and the second substrate 123 and then to the second cooling target temperature of 200 ° C. Used for cooling.

  The controller 280 uses the remaining three temperature control furnaces 240 in a heating process in which the holder pair is heated to a joining temperature of 450 ° C. to join the holder pair and cooled to the second cooling target 200 ° C. Is used in the cooling process for cooling from the second cooling target temperature to room temperature, by comparing the time required to heat the holder pair with the time required to cool the holder pair. For example, the controller 280 uses the two temperature control furnaces 240 for the heating process when the time required for heating is longer, and uses the two temperature control furnaces 240 for the cooling process when the time required for cooling is longer. . Further, the ratio of the time required for cooling the holder pair to the time required for heating the holder pair is obtained, and the purpose of use of the temperature control furnace 240 is determined according to the time ratio. Accordingly, by determining whether to use the temperature control furnace 240 for heating or cooling based on the substrate bonding recipe, the processing waiting time of the holder pair is reduced, and the rotation efficiency of the entire substrate bonding apparatus 100 is increased. Can do.

  FIG. 5 is a flowchart of an embodiment of a control method for controlling the temperature control furnace 240. In step S010, every time a new substrate bonding recipe is introduced, input of information regarding at least one of heating and cooling is accepted. For example, the heating rate up to the junction temperature, the heat retention time at the junction temperature, the cooling rate from the junction temperature to the second cooling target temperature, the cooling rate from the second cooling target temperature to the first cooling target temperature, etc. The heating and cooling processing conditions are input to the control unit 280.

  In step S020, the control unit 280 calculates a time ratio between the time required for the heating process and the time required for the cooling process in the substrate bonding process based on the conditions input in step S010. For example, it takes 7 minutes to heat the holder pair to the bonding temperature of 450 ° C., the time for keeping the temperature while pressing at the bonding temperature of 450 ° C. is 5 minutes, and then cooling from the bonding temperature of 450 ° C. to the second cooling target temperature of 200 ° C. It takes 3 minutes to do this. It is assumed that it takes 10 min to cool from the second cooling target temperature 200 ° C. to room temperature, which is an example of the first cooling target temperature. Then, the time ratio between the time required for the heating process and the time required for the cooling process is 3 to 2.

  In step S030, the control unit 280, based on the obtained time ratio, heats the pair of holders to 450 ° C., joins them, and cools them to 200 ° C., and the number of temperature control furnaces 240 used for joining. The number of temperature control furnaces 240 used to cool the pair from 200 ° C. to room temperature is determined, and which temperature control furnaces 240 are used for heating and which temperature control furnaces 240 are used for cooling. For example, as described above, when the time ratio is 3 to 2, three temperature control furnaces 240 in the substrate bonding apparatus 100 may be used for the heating process, and one temperature control furnace 240 may be used for the cooling process. . Thereby, the ratio of the number of processing devices used for the heating process and the number of processing devices used for the cooling process is 3 to 2, which is exactly the above-mentioned time ratio and can reduce the processing waiting time of the holder pair. Therefore, the operating rate of the apparatus can be maximized and the throughput of the substrate bonding apparatus 100 can be increased.

  In addition, as a method of determining the temperature control furnace 240 used for heating and the temperature control furnace 240 used for cooling, for example, the temperature control furnace 240 is given an ID number, and the temperature control used for cooling in ascending order of the ID number. The furnace 240 may be distributed. Alternatively, the temperature control furnace 240 close to the cooling chamber 250 may be distributed so as to be used for cooling. If it does so, the mutual temperature influence of the cooling chamber 250 and the adjacent temperature control furnace 240 can be suppressed.

  In step S040, the control unit 280 controls the temperature control furnace 240 based on the determination in step S030. For example, the controller 280 heats and holds the holder pair up to 450 ° C. in the first temperature control furnace 240, the second temperature control furnace 240, and the third temperature control furnace 240 determined to be used in the heating process. While pressing the holder pair to join the first substrate 122 and the second substrate 123, the holder pair is cooled to 200 ° C. The controller 280 cools the pair of holders after substrate bonding from 200 ° C. to room temperature in the fourth temperature control furnace 240 determined to be used in the cooling process. By the above control, the first substrate 122 and the second substrate 123 are bonded, and then the holder pair is carried out from the bonding portion 106 to the alignment portion 104.

  FIG. 6 shows an outline of a manufacturing method for manufacturing a stacked semiconductor device. As shown in FIG. 6, the laminated semiconductor device is a base material for the laminated semiconductor device, step S110 for designing the function / performance of the laminated semiconductor device, step S120 for producing a mask (reticle) based on this design step, and step S120. It is manufactured through step S130 for manufacturing a substrate, substrate processing step S140 including lithography using a mask pattern, device assembly step S150 including a substrate bonding step using the above-described substrate bonding apparatus, inspection step S160, and the like. The The device assembly step S150 includes processing processes such as a dicing process, a bonding process, and a package process following the substrate bonding process.

  In the embodiment shown in FIGS. 1 to 5, the example of the substrate bonding apparatus 100 having four temperature control furnaces 240 and one cooling chamber 250 has been described, but the number of temperature control furnaces 240 is limited. It is not a thing. When there are a plurality of temperature control furnaces 240, whether to use the temperature control furnaces 240 for the heating process or the cooling process depends on the number of temperature control furnaces 240 used for the heating process, the temperature control furnaces 240 used for the cooling process, and the cooling. If the processing devices are allocated so that the ratio of the number of chambers 250 to the ratio of the time required for the superheating process and the time required for the cooling process is reduced, the processing waiting time for the holder pair is reduced, and the substrate bonding apparatus 100 is reduced. The overall operating rate can be increased and the throughput can be increased. Further, the processing speed of the heating process and the processing speed of the cooling process may be calculated, and the processing apparatuses may be allocated based on the inverse ratio of the speed ratio. For example, when the processing speed of the heating process is 4 sheets / h and the processing speed of the cooling process is 6 sheets / h, the speed ratio is 2/3, and the processing apparatus is set to 3/2, which is the inverse ratio. May be distributed. That is, three temperature control furnaces 240 may be used for the heating process, and one temperature control furnace 240 and the cooling chamber 250 may be used for the cooling process.

  In addition, when the heating and cooling processing conditions are changed and input of new information regarding at least one of heating and cooling is received in the input step S010 in FIG. 5, the control unit 280 newly adds a time ratio in step S020. And the determination step S030 is newly executed, so that the optimum operation state of the substrate bonding apparatus 100 is always maintained. For example, in the new recipe, when the time ratio between the time required for the heating process and the time required for the cooling process is changed to 4: 1, the control unit 280 may use the fourth temperature used in the cooling process so far in step S030. By deciding to use the control furnace 240 for the heating process, the four temperature control furnaces 240 are used for the heating process, and the processing apparatus is redistributed so that one cooling chamber is used for the cooling process. The processing waiting time for the pair is reduced, and the optimum operation state of the substrate bonding apparatus 100 is maintained.

  In the above-described embodiment, the first substrate 122 and the second substrate 123 are held and transported by the upper substrate holder 124 and the lower substrate holder 125, respectively, until they are joined, but the first substrate 122 and the second substrate 123 are The upper substrate holder 124 and the lower substrate holder 125 may be directly transferred without using them.

  In the above embodiment, the three temperature control furnaces 240 are divided into a temperature control furnace 240 used for the heating process and a temperature control furnace 240 used for the cooling process. Is not limited to this. As another example, at least one of the three temperature control furnaces 240 may be used for both the heating process and the subsequent cooling process. In this case, the controller 280 determines which one of the plurality of temperature control furnaces 240 is used for the heating process, which is used for the cooling process, and which of the other is both the heating process and the cooling process in the determination step S030. It is decided whether to use for. In the control step S0204, the control unit 280 controls the temperature control furnace 240 determined for the heating process based on the determination in the determination step S030 so as to heat and bond the plurality of substrates and determine the cooling process. The controlled temperature control furnace 240 is controlled to cool the plurality of bonded substrates to the first cooling target temperature, and the temperature control furnace 240 determined for both processes is heated to bond the plurality of substrates. Control is performed to cool the plurality of bonded substrates to the first cooling target temperature.

  As mentioned above, although this invention was demonstrated using embodiment, the technical scope of this invention is not limited to the range as described in the said embodiment. It will be apparent to those skilled in the art that various modifications or improvements can be added to the above-described embodiment. It is apparent from the scope of the claims that the embodiments added with such changes or improvements can be included in the technical scope of the present invention.

  The order of execution of each process such as operations, procedures, steps, and stages in the apparatus, system, program, and method shown in the claims, the description, and the drawings is particularly “before” or “prior to”. It should be noted that the output can be realized in any order unless the output of the previous process is used in the subsequent process. Regarding the operation flow in the claims, the description, and the drawings, even if it is described using “first”, “next”, etc. for convenience, it means that it is essential to carry out in this order. It is not a thing.

  DESCRIPTION OF SYMBOLS 100 Substrate bonding apparatus, 102 Housing | casing, 104 Alignment part, 106 Joining part, 108 Heat insulation wall, 112 Substrate cassette, 114 Substrate cassette, 116 Substrate cassette, 122 First substrate, 123 Second substrate, 124 Upper substrate holder, 125 Lower substrate holder, 126 Pre-aligner, 128 Substrate holder rack, 130 Substrate removal unit, 132 Robot arm, 134 Robot arm, 140 Stage device, 141 First stage, 142 Second stage, 145 Heat insulation wall, 146 Shutter, 148 Control unit, 220 load lock chamber, 222 shutter, 224 shutter, 230 robot arm, 240 temperature control furnace, 250 cooling chamber, 280 control unit, 300 heat insulation chamber, 310 upper stage, 320 lower stage, 322 top pre , 324 heating unit, 326 pressure control unit, 330 elevating unit, 332 piston, 334 cylinder, 401 heater plate, 402 heater plate, 403 heater plate, 404 electric heater, 405 lead wire, 406 beads, 407 cooling tube, 410 frame, 411 1st support part, 412 1st pressure detection part, 420 heat shield plate, 431 2nd support part, 432 2nd pressure detection part, 436 pressure sensor, 501 hollow pressurization part, 502 valve, 503 supply pipe, 620 down Stage, 622 Top plate, 627 Refrigerant circuit, 628 Cooling unit

Claims (10)

A control method for controlling a substrate bonding apparatus having a temperature adjusting unit that holds a plurality of stacked substrates, heats the plurality of substrates to be bonded, and cools the plurality of bonded substrates,
An input step for receiving input of information on at least one of heating and cooling;
When an input of new information regarding at least one of heating and cooling is accepted by the input step, the temperature adjustment unit is dedicated to heating for heating and bonding the plurality of substrates, or the bonded already I saw including a determination step of <br/> of determining whether a cooling-only for cooling a plurality of substrates,
The substrate bonding apparatus has a plurality of the temperature control units,
The determining step is a control method for determining which one of the plurality of temperature control units is dedicated to heating and which of the plurality of temperature control units is dedicated to cooling . In the determining step, the time required to heat the plurality of substrates is compared with the time required to cool the plurality of substrates, and the temperature adjustment unit is heated when the time required for heating is longer The control method according to claim 1, wherein the temperature adjustment unit is determined to be dedicated for cooling when the dedicated time is required for cooling and the time required for cooling is longer. In the determining step, the time ratio between the time required to heat the plurality of substrates and the time required to cool the plurality of substrates is obtained, and the number of the temperature control units dedicated to heating and the cooling only The control method according to claim 1, wherein a ratio of the number of the temperature adjusting units is brought close to the time ratio. Based on the determination in the determining step, the temperature control unit dedicated to heating is controlled to heat and bond the plurality of substrates, or cooling only to cool the plurality of bonded substrates. The control method according to claim 1 , further comprising a control step of controlling the temperature adjustment unit. In the control step, when controlling the temperature control unit dedicated to heating, the plurality of substrates are heated and bonded, and then the temperature is higher than a cooling temperature by the temperature control unit dedicated to cooling. The control method according to claim 4, wherein a plurality of substrates are cooled. It said determining step, one of a plurality of the temperature adjustment unit and heating only, either as a cooling-only, additionally, and any and heating the plurality of substrates or used to cool, determines the claim 1 6. The control method according to any one of items 1 to 5 . Based on the determination by the determining step, the step of controlling the temperature control unit dedicated to heating to heat and bond the plurality of substrates is dedicated to cooling to cool the plurality of bonded substrates. 7. The method of claim 6, further comprising the step of controlling the temperature adjustment unit, or controlling the temperature adjustment unit to heat and bond the plurality of substrates and to cool the plurality of bonded substrates. Control method. A heating unit that heats the plurality of stacked substrates to be bonded, and a plurality of temperature control units that have a cooling unit that cools the plurality of bonded substrates.
It is determined whether the temperature adjusting unit is exclusively used for heating to heat and bond the plurality of substrates or only for cooling to cool the plurality of already bonded substrates, and based on the determination, the temperature adjustment is performed. A control unit for controlling the unit
With
When an input of new information regarding at least one of heating and cooling is received, the control unit dedicates one of the plurality of temperature control units to one of the plurality of temperature control units. Substrate laminating device that determines whether it is dedicated to cooling . A method for manufacturing a laminated semiconductor device, comprising: bonding a substrate by the substrate bonding apparatus according to claim 8, which is controlled by the control method according to claim 1 . A stacked semiconductor device manufactured by the method for manufacturing a stacked semiconductor device according to claim 9 .

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