JP6491812B2 - メンブレン、研磨ヘッド、ワークの研磨装置及び研磨方法、並びに、シリコンウェーハ - Google Patents

メンブレン、研磨ヘッド、ワークの研磨装置及び研磨方法、並びに、シリコンウェーハ Download PDF

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Publication number
JP6491812B2
JP6491812B2 JP2013207446A JP2013207446A JP6491812B2 JP 6491812 B2 JP6491812 B2 JP 6491812B2 JP 2013207446 A JP2013207446 A JP 2013207446A JP 2013207446 A JP2013207446 A JP 2013207446A JP 6491812 B2 JP6491812 B2 JP 6491812B2
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Japan
Prior art keywords
membrane
polishing
thickness
workpiece
silicon wafer
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JP2013207446A
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English (en)
Japanese (ja)
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JP2015071197A (ja
Inventor
良也 寺川
良也 寺川
竜一 谷本
竜一 谷本
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Sumco Corp
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Sumco Corp
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Priority to JP2013207446A priority Critical patent/JP6491812B2/ja
Priority to KR1020140132228A priority patent/KR101591803B1/ko
Publication of JP2015071197A publication Critical patent/JP2015071197A/ja
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Publication of JP6491812B2 publication Critical patent/JP6491812B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2013207446A 2013-10-02 2013-10-02 メンブレン、研磨ヘッド、ワークの研磨装置及び研磨方法、並びに、シリコンウェーハ Active JP6491812B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013207446A JP6491812B2 (ja) 2013-10-02 2013-10-02 メンブレン、研磨ヘッド、ワークの研磨装置及び研磨方法、並びに、シリコンウェーハ
KR1020140132228A KR101591803B1 (ko) 2013-10-02 2014-10-01 멤브레인, 연마 헤드, 워크의 연마 장치 및 연마 방법, 그리고, 실리콘 웨이퍼

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013207446A JP6491812B2 (ja) 2013-10-02 2013-10-02 メンブレン、研磨ヘッド、ワークの研磨装置及び研磨方法、並びに、シリコンウェーハ

Publications (2)

Publication Number Publication Date
JP2015071197A JP2015071197A (ja) 2015-04-16
JP6491812B2 true JP6491812B2 (ja) 2019-03-27

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JP2013207446A Active JP6491812B2 (ja) 2013-10-02 2013-10-02 メンブレン、研磨ヘッド、ワークの研磨装置及び研磨方法、並びに、シリコンウェーハ

Country Status (2)

Country Link
JP (1) JP6491812B2 (ko)
KR (1) KR101591803B1 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6380333B2 (ja) * 2015-10-30 2018-08-29 株式会社Sumco ウェーハ研磨装置およびこれに用いる研磨ヘッド
KR102160328B1 (ko) * 2017-02-01 2020-09-25 강준모 화학기계적연마장치용 캐리어헤드
US11267099B2 (en) 2017-09-27 2022-03-08 Taiwan Semiconductor Manufacturing Company, Ltd. Chemical mechanical planarization membrane
JP6919579B2 (ja) * 2018-01-17 2021-08-18 株式会社Sumco 貼り合わせウェーハの製造方法、貼り合わせウェーハ
CN111469044A (zh) * 2020-05-18 2020-07-31 中国科学院微电子研究所 一种膜板、研磨头和化学机械研磨装置
KR102512323B1 (ko) * 2020-09-04 2023-03-30 그린스펙(주) 웨이퍼 위치조절이 가능한 구조의 화학연마장치용 캐리어 헤드

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19823904A1 (de) 1998-05-28 1999-12-02 Wacker Siltronic Halbleitermat Hochebene Halbleiterscheibe aus Silicium und Verfahren zur Herstellung von Halbleiterscheiben
US6641461B2 (en) * 2001-03-28 2003-11-04 Multi Planar Technologyies, Inc. Chemical mechanical polishing apparatus having edge, center and annular zone control of material removal
JP2007307623A (ja) 2006-05-16 2007-11-29 Elpida Memory Inc 研磨装置
KR20100079165A (ko) * 2008-12-30 2010-07-08 주식회사 동부하이텍 화학적 기계적 연마장치, 이에 이용되는 멤브레인 및 연마헤드
JP2010247254A (ja) * 2009-04-13 2010-11-04 Shin Etsu Handotai Co Ltd 研磨ヘッドの製造方法及び研磨装置

Also Published As

Publication number Publication date
KR101591803B1 (ko) 2016-02-04
JP2015071197A (ja) 2015-04-16
KR20150039576A (ko) 2015-04-10

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