JP6489004B2 - Cleaning device, cleaning method and silicon single crystal manufacturing method - Google Patents

Description

  The present invention relates to a cleaning device, a cleaning method, and a method for manufacturing a silicon single crystal.

  Conventionally, a pulling device that pulls a single crystal using a wire is known. Deposits such as vapor at the time of pulling the single crystal, wire wear powder, and SUS wear powder on the take-up drum adhere to the wire of the pulling device. If the next single crystal is pulled without cleaning the wire after the pulling is completed, dislocations, slip dislocations, twin defects will occur due to the separation of the deposits and adhesion to the crystals, and the yield rate of the product will decrease. End up. Thus, wire cleaning has been studied as one of the measures for preventing the non-defective product rate from being lowered (see, for example, Patent Document 1).

  The cleaning mechanism of the apparatus of Patent Document 1 has a gas blowing nozzle provided on the side of the wire and a through-hole through which the wire can be rotated up and down, and is provided on the opposite side of the gas blowing nozzle. And a gas suction pipe. With such a configuration, an inert gas is blown onto the wire by the gas blowing nozzle, and the attached inert gas is sucked by the gas suction tube, thereby removing the deposit on the wire.

JP 2011-32142 A

  However, in the apparatus of Patent Document 1, since there is a large space around the wire, the suction force applied to the wire is dispersed, and the suction force per unit area applied to the wire cannot be increased. , The ability to remove deposits cannot be increased.

  An object of the present invention is to provide a cleaning device, a cleaning method, and a method for producing a silicon single crystal that can appropriately remove deposits on a wire or a member to be cleaned.

  The cleaning device of the present invention is a cleaning device for a linear or rod-shaped cleaning target member used for manufacturing a single crystal, and the case having a hollow portion and the cleaning target member are inserted so as to be relatively movable in the longitudinal direction thereof. A fitting portion into which the tubular portion is fitted in a state where a portion of the tubular portion is located in the hollow portion, and a first discharge hole that penetrates the case. A second discharge hole penetrating the tube portion is provided in a portion of the tube portion located in the hollow portion, and the first discharge hole and the second discharge hole are provided from the outside of the case. In this case, the deposits on the member to be cleaned can be discharged.

Here, as a member to be cleaned of the present invention, a wire (linear) or shaft (bar-shaped) used for pulling a single crystal by the CZ method (Czochralski method), or a single crystal by the FZ method (floating zone method) A shaft used for pulling up can be exemplified.
According to the present invention, the second discharge hole is provided in a portion of the cylindrical portion located in the hollow portion of the case, and the cleaning target member is attached via the second discharge hole closer to the cleaning target member than the first discharge hole of the case. The kimono is discharged. Therefore, if the suction force (discharge force) of the first discharge hole is the same as the suction force of the suction hole of Patent Document 1, the object to be cleaned is passed through the second discharge hole as compared with the configuration of Patent Document 1. The suction force per unit area applied to the member can be increased, and the ability to remove deposits can be increased.
Further, the cleaning device of the present invention can be used by being installed in a furnace used for producing a single crystal, and a wire or rod-shaped member to be cleaned, for example, a wire (used for pulling a single crystal by the CZ method ( These members to be cleaned can be cleaned without removing the shaft used for pulling the single crystal by the FZ method from a linear shape) or a shaft (rod shape).

  In the cleaning device according to the aspect of the invention, it is preferable that the cylindrical portion is provided with a plurality of the second discharge holes so that the circumferential position of the cylindrical portion is shifted.

  According to the present invention, it is possible to suck and remove deposits from the entire area in the circumferential direction without rotating the member to be cleaned.

  In the cleaning device according to the aspect of the invention, the supply connecting portion provided in the hollow portion may be provided, the case may be provided with a supply hole penetrating the case, and the supply connecting portion may include the supply hole and the cylindrical portion. It is preferable that a supply flow path that communicates with the inside of the case is provided, and a fluid that is supplied from the outside of the case through the supply hole and the supply flow path is guided to the member to be cleaned.

  According to the present invention, the deposit on the member to be cleaned is detached by the fluid supplied through the supply flow path, and the detached deposit is removed from the first discharge hole through the inside of the cylindrical portion and the second discharge hole. Therefore, it is possible to further improve the ability to remove deposits.

  In the cleaning device according to the aspect of the invention, the cylinder portion includes a pair of cylinder members arranged in the relative movement direction with the supply connection portion interposed therebetween, and the first discharge hole has the relative movement direction with the supply connection portion interposed therebetween. The supply flow path includes an inner flow path that communicates with the inside of the pair of cylindrical members, and an outer flow path that communicates the inner flow path and the supply hole. preferable.

  According to the present invention, by moving the cleaning target member relative to the cleaning device, the suction through the first discharge hole and the supply of the fluid through the supply hole can be performed. Adhesive matter suction processing, detachment processing, and suction processing can be performed in this order on the region, and the ability to remove adhered matter can be further improved compared to a configuration in which the detachment processing and suction processing are performed only once. it can.

  In the cleaning device of the present invention, the outer flow path guides the fluid toward a plurality of positions along the circumferential direction of the cleaning target member located in the inner flow path or toward the entire circumference of the cleaning target member. It is preferable that it is comprised.

  According to the present invention, it is possible to remove and remove deposits from the entire region in the circumferential direction without rotating the member to be cleaned.

The cleaning device of the present invention is a cleaning device for a linear or rod-shaped cleaning target member used for manufacturing a single crystal, has a hollow portion, and the cleaning target member can be inserted so as to be relatively movable in its longitudinal direction. A cleaning case, a supply portion for guiding a fluid supplied from the outside of the case to the member to be cleaned located in the hollow portion, and both sides of the supply portion in the relative movement direction. It has a pair of discharge parts for discharging the adhesion matter of an object member out of the case.

  According to the present invention, a fluid is supplied to a portion of the cleaning target member located in the hollow portion of the case to remove the deposit remaining on the cleaning target member, and the separated deposit is removed via the discharge portion. To the outside of the case. Thus, in order to remove the deposit from the member to be cleaned located in the limited space called the hollow portion of the case, the suction force (discharge force) of the discharge portion is the same as the suction force of the suction hole of Patent Document 1. If it exists, compared with the structure of the said patent document 1, the suction | attraction force per unit area provided to a cleaning object member through a discharge hole can be enlarged, and the removal capability of a deposit | attachment can be improved.

  The cleaning device of the present invention includes an air supply device that supplies the fluid and a suction device that sucks and discharges the deposit, and the suction device is larger than a supply force of the fluid of the air supply device. It is preferable to discharge the deposit by suction force.

  According to the present invention, it is possible to suppress the deposits from being discharged from locations other than the discharge portion and the first discharge hole during cleaning.

  The cleaning method of the present invention is characterized in that the deposit is discharged to the outside using a cleaning device.

  The cleaning method of the present invention is a cleaning device configured to cover the outer periphery of a linear or rod-shaped cleaning target member used for manufacturing a single crystal and to be relatively movable in the longitudinal direction of the cleaning target member. A supply unit for guiding the fluid supplied from the cleaning target member to the cleaning target member, and a pair of the supply unit for discharging the deposit on the cleaning target member to the outside. A cleaning method for a member to be cleaned using a cleaning device having a discharge unit, wherein the deposit on an arbitrary region of the member to be cleaned is moved to one side while moving the member to be cleaned relative to the cleaning device. The deposits discharged to the outside through the discharge unit and remaining in the arbitrary area are supplied to the supply unit. Is disengaged by fluid, characterized by discharging the withdrawal is not a deposit to the outside through the other discharge portion.

  According to the present invention, the suction process (discharge process), the detachment process, and the suction process are performed in order on an arbitrary region of the member to be cleaned, so that the detachment process and the suction process are performed only once at the same time. As compared with the above, it is possible to further enhance the ability to remove deposits.

  In the cleaning method of the present invention, it is preferable that the deposit is discharged with a suction force larger than the fluid supply force.

In the cleaning method of the present invention, the member to be cleaned is preferably a wire used for pulling up a silicon single crystal.
The method for producing a silicon single crystal of the present invention is characterized in that the silicon single crystal is pulled up using the wire cleaned by the above-described cleaning method.

  According to the present invention, it is possible to suppress the occurrence of dislocation, slip dislocation, twin defects, etc. by pulling up the silicon single crystal using the wire from which the deposits have been removed by the cleaning method. It is possible to suppress a decrease in the yield rate.

The front view and top view which show the structure of the cleaning apparatus which concerns on one Embodiment of this invention. FIG. 2 is an end view taken along line II-II in FIG. 1, where (A) represents the entire cleaning device, and (B) represents a region P in (A). The side view and top view which show the structure of the cylinder member of the said cleaning apparatus. It is a figure showing arrangement | positioning of the discharge hole of the said cylinder member, (A), (B), (C) is an end elevation along the IVA-IVA line, IVB-IVB line, and IVC-IVC line | wire of FIG. 3, respectively. It is a figure showing arrangement | positioning of the linear flow path of the supply connection part of the said cleaning apparatus, (A), (B), (C) is respectively the VA-VA line, VB-VB line, and VC-VC line of FIG. FIG. The side view and top view which show the structure of the 2nd division | segmentation connection member of the said supply connection part. The schematic diagram which shows schematic structure of the raising apparatus of the said one Embodiment. Explanatory drawing of the 1st cleaning method of the said one Embodiment. Explanatory drawing of the 2nd cleaning method of the said one Embodiment. The graph which shows the measurement result of the deposit | attachment which concerns on the Example of this invention.

[Embodiment]
Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In addition, when indicating directions, the + Z direction is “up”, the −Z direction is “down”, the + X direction is “left”, and the −X direction is “left”, with reference to the X, Y, and Z axes in FIG. The description will be made assuming that the “right” and + Y directions are “front” and the −Y direction is “rear”.

[Configuration of cleaning device]
First, the configuration of a cleaning device according to an embodiment of the present invention will be described.
A cleaning device 1 as shown in FIG. 1 and FIGS. 2A and 2B is used to remove deposits on the wire W as a member to be cleaned.
The cleaning device 1 includes a case 2 having a hollow portion 21, a cylindrical portion 3 through which the wire W is inserted so as to be relatively movable in the longitudinal direction (vertical direction), a supply connecting portion 4 provided in the hollow portion 21, A cap 5 provided at the upper and lower ends of the case 2 is provided.

The case 2 is formed in a dodecagonal tube shape in which an upper surface and a lower surface are closed.
In the center of the upper surface and the lower surface of the case 2, case fitting holes 22 are provided as fitting holes into which the cylindrical portion 3 is fitted in a state where a part of the cylindrical portion 3 is located in the hollow portion 21. Yes. The case fitting hole 22 is formed in the same octagon as the outer shape of the cylindrical portion 3. When the cylindrical portion 3 is fitted into the case fitting hole 22, the hollow portion 21 is sealed, and the cylindrical portion 3. Is prevented from rotating with respect to the case 2.
The case 2 includes a first divided case member 2A having a shape obtained by vertically halving the case 2 and a second divided case member 2B. The first and second divided case members 2A and 2B are made of, for example, PVC (Poly Vinyl Chloride).
The first split case member 2A located on the front side is provided with a first discharge hole 23 that penetrates the first split case member 2A. The first discharge holes 23 are provided above and below the supply connecting portion 4, respectively. A suction device 81 is connected to the first discharge hole 23.
The second split case member 2B located on the rear surface side is provided with a supply hole 24 that penetrates the second split case member 2B. The supply hole 24 is provided at the same height as the supply connection portion 4. An air supply device 82 is connected to the supply hole 24.

  The cylindrical portion 3 includes a pair of cylindrical members 31 arranged vertically with the supply connecting portion 4 interposed therebetween. The cylindrical member 31 is formed in an octagonal cylindrical shape using, for example, PEEK (Polyether Ether Ketone) resin. Each of the cylindrical members 31 has a shape obtained by vertically dividing the cylindrical member 31 vertically, and includes a first divided cylindrical member 31A located on the front side and a second divided cylindrical member 31B located on the rear side. Has been. The pair of cylindrical members 31 are arranged linearly by fitting one end side in the axial direction into the positioning groove 41 of the supply connecting portion 4 and fitting the other end side into the case fitting hole 22 from the center. . The illustrated cylindrical member 31 has an octagonal cylindrical shape, but is not limited thereto, and may be cylindrical.

A plurality of second discharge holes 311 penetrating in a direction intersecting the vertical direction, for example, in the horizontal direction, are provided in a portion of the cylindrical member 31 located in the hollow portion 21 in a vertical direction. The second discharge hole 311, the hollow portion 21, and the first discharge hole 23 constitute a pair of discharge portions 11 sandwiching a supply portion 12 described later, and a suction device 81 connected to the first discharge hole 23. Is driven, the adhering matter of the wire W is sucked through the second discharge hole 311 and the first discharge hole 23.
Further, as shown in FIG. 3, four second discharge holes 311 are provided at six height positions. Furthermore, the 2nd discharge hole 311 adjacent to the upper and lower sides is provided so that the position of the circumferential direction of the cylinder member 31 may shift | deviate. Specifically, the four second discharge holes 311 at the respective height positions are arranged as shown in FIGS. 4A, 4B, and 4C. The cylindrical member 31 is provided at a position shifted by 30 ° in the circumferential direction.

The outer shape of the supply connecting portion 4 is formed in the same dodecagon as the inner shape of the case 2. When the supply connecting portion 4 is arranged in the hollow portion 21 as shown in FIG. The connecting portion 4 makes the upper hollow portion 21 and the lower hollow portion 21 become independent sealed spaces, and the supply connecting portion 4 does not rotate with respect to the case 2.
The supply connecting portion 4 is provided with a supply flow path 42 that communicates the supply hole 24 with the inside of the cylindrical member 31. The supply flow path 42 includes an inner flow path 43 that communicates with the inside of the pair of cylindrical members 31 and an outer flow path 44 that communicates the inner flow path 43 and the supply hole 24. When the supply section 12 is configured by the inner flow path 43, the outer flow path 44, and the supply hole 24, and the air supply device 82 connected to the supply hole 24 is driven, the supply hole 24, the outer flow path 44, A gas as a fluid is guided to the wire W through the inner flow path 43.

The inner flow path 43 includes a central flow path 431 and end flow paths 432 provided above and below the central flow path 431, respectively. The central channel 431 is formed with a width larger than the end channel 432.
The outer flow path 44 includes an introduction flow path 441 that extends inward from the outer edge of the supply connecting portion 4, an annular flow path 442 that communicates with the introduction flow path 441 and surrounds the inner flow path 43, and an annular flow path 442. And a plurality of linear flow channels 443 that communicate with the inner flow channel 43.
Four linear flow paths 443 are provided at six height positions. Further, the linear flow paths 443 that are vertically adjacent to each other are provided such that the circumferential position of the supply connecting portion 4 is shifted. Specifically, as shown in FIGS. 5A, 5B, and 5C, the four linear flow paths 443 at the respective height positions are linear flow paths 443 at the next lower height position. Is provided at a position shifted by 30 ° in the circumferential direction of the supply connecting portion 4.

Further, the supply connecting portion 4 has a shape obtained by vertically dividing the supply connecting portion 4 vertically, and the first divided connecting member 4A located on the front surface side and the second divided connecting member located on the rear surface side. 4B. The first and second divided connection members 4A and 4B are made of PVC, for example, like the first and second divided case members 2A and 2B.
An introduction flow path 441 is provided in the second divided connecting member 4B. As shown in FIG. 6, two O-rings 45 are provided on the surface of the second divided connecting member 4B that faces the first divided connecting member 4A. The O-ring 45 is fitted in a groove provided in the second divided connecting member 4B so as to surround the annular flow path 442. In this way, the first split connecting member 4A and the second split connecting member 4B are brought into close contact with the O-ring 45 interposed therebetween, whereby gas can be prevented from leaking from the annular flow path 442 to the outside of the supply connecting portion 4. .

As shown in FIG. 1, the cap 5 is formed in a dodecagon in a plan view, for example, with MC nylon (registered trademark). In the center of the cap 5, a cap fitting hole 51 penetrating vertically is provided. The cap fitting hole 51 is formed in the same shape as the outer shape of the cylindrical member 31.
A fitting groove 52 into which an end of the case 2 is fitted is provided on the surface of the cap 5 facing the case 2. When the fitting groove 52 is fitted into the case 2, the end surface of the cylindrical member 31 fitted into the cap fitting hole 51 does not protrude from the cap 5, and the cap 5 does not rotate with respect to the case 2. It is like that.
The cap 5 is provided with a slit portion 53 that extends outward from the cap fitting hole 51. The width of the slit portion 53 is set larger than the diameter of the wire W.

[Wire cleaning method]
Next, a method for cleaning the wire W using the cleaning device 1 will be described.

{Cleaning method in the state where the entire chamber of the lifting device is at atmospheric pressure (first cleaning method)}
First, the configuration of a pulling device having a wire to be cleaned will be described.
As shown in FIG. 7, the pulling device 83 is used for manufacturing the silicon single crystal SM by the CZ method. I have. A winding drum 834 for winding the wire W is provided on the upper portion of the main chamber 831.
The silicon single crystal SM is manufactured by bringing the seed crystal SC attached to the tip of the wire W into contact with the silicon melt M in the crucible 835 and pulling up the seed crystal SC while rotating it.

Next, the configuration of the holding device 84 that holds the cleaning device 1 in the pull chamber 833 will be described.
The holding device 84 includes a mounting portion 841 that is attached to the pull chamber 833 by, for example, a screw (not shown), and a holding portion 842 that extends from the mounting portion 841 to the inside of the pull chamber 833. A holding concave portion 843 having a U-shape in a plan view for holding the cap 5 of the cleaning device 1 from below is provided on the distal end side of the holding portion 842.

Next, a method for cleaning the wire W will be described.
First, after the inside of the main chamber 831 and the pull chamber 833 is returned to atmospheric pressure with the gate valve 832 opened, a window (not shown) of the pull chamber 833 is opened and the holding device 84 is attached to the pull chamber 833.
Next, as shown in FIG. 2A, a first divided connecting member 4A and a pair of first divided cylinder members are connected to a first divided case member 2A connected to a suction device 81 via a pipe. A first divided part is formed to which 31A is fixed. Further, the second divided case member 2B connected to the air supply device 82 via the pipe is connected to the second divided connecting member 4B provided with the O-ring 45 and the pair of second divided cylinder members 31B. A fixed second divided part is formed. Thereafter, for example, after the first divided part is moved into the pull chamber 833, the wire W is positioned in the first divided cylindrical member 31A, and the opening of the second divided part as shown in FIG. By bringing the edge and the opening edge of the first divided part into close contact with each other, the cylindrical portion 3 and the supply connecting portion 4 are accommodated in the case 2.

Thereafter, the cap 5 is attached to the upper and lower ends of the case 2. Specifically, at a position away from the case 2, the cap 5 is moved so that the wire W moves relatively in the slit portion 53 toward the cap fitting hole 51, and the cap fitting hole 51 faces the cylindrical member 31. When the cap 5 is close to the case 2, the cylindrical member 31 is fitted into the cap fitting hole 51 and the end of the case 2 is fitted into the fitting groove 52, so that the cap 5 is attached to the case 2. Is completed.
Then, the lower cap 5 is held by the holding recess 843 of the holding device 84 as shown in FIG. 7, and the setting of the cleaning device 1 is completed.

Thereafter, by driving the suction device 81, the air supply device 82, and the take-up drum 834, the wire W does not rotate as schematically shown in FIGS. 8 (A), (B), and (C). While being pulled up, the suction process in the lower discharge unit 11, the air supply process in the supply unit 12, and the suction process in the upper discharge unit 11 are performed in this order on an arbitrary region W <b> 1 of the wire W. As a result, the deposit in the arbitrary region W1 is removed in the lower discharge unit 11, and then the deposit that could not be removed in the lower discharge unit 11 is detached from the arbitrary region W1 in the supply unit 12, Thereafter, the deposits detached in the supply unit 12 are removed by the upper discharge unit 11. At this time, if the suction device 81 sucks the deposit with a suction force larger than the gas supply force of the air supply device 82, it is possible to suppress the deposit from being discharged from a place other than the discharge portion 11. it can.
Then, when the entire wire W has passed through the cleaning device 1, the cleaning of the wire W is completed. A weight may be attached to the lower end of the wire W to suppress the swing of the wire W during winding. In this case, a sensor for detecting that the weight has contacted the lower cap 5 is provided. The driving of the winding drum 834 may be stopped using the detection as a trigger.

{Cleaning method during silicon raw material charge in silicon single crystal manufacturing process (second cleaning method)}
First, the tension applying device for the wire W used in the second cleaning method will be described.
As shown in FIG. 9, the tension applying device 85 includes a carriage 851, a male screw portion 853 attached to a weight 852 at the lower end of the wire W, a female screw portion 854 that is screwed into the male screw portion 853, a female screw portion 854, and a cart 851. And a connecting portion 855 for connecting the two. The female screw portion 854 is provided so as to be rotatable with respect to the connecting portion 855. The connection part 855 is comprised by the spring and the rod-shaped member, for example. The male screw portion 853 may be provided so as to be rotatable with respect to the weight 852. In this case, the female screw portion 854 may be provided so as not to be rotatable with respect to the connecting portion 855.

Next, a method for cleaning the wire W will be described.
First, after the silicon single crystal is manufactured, in order to charge the crucible 835 (see FIG. 7) with the silicon raw material, only the pull chamber 833 is returned to atmospheric pressure after the gate valve 832 is closed. Next, the pull chamber 833 is removed from the main chamber 831 and placed on a mounting table (not shown), and a weight 852 and a male screw portion 853 are attached to the lower end of the wire W as shown in FIG. Thereafter, the male screw portion 853 is screwed into the female screw portion 854, and a predetermined tension is applied to the wire W by adjusting the screwed state.

Thereafter, the cleaning device 1 is set on the wire W in the same procedure as the first cleaning method described above, and the suction device 81 and the air supply device 82 are driven. Raise without rotating. By this operation, the suction process in the upper discharge unit 11, the air supply process in the supply unit 12, and the suction process in the lower discharge unit 11 are performed in this order for an arbitrary region of the wire W, and the first process is performed. Contrary to the cleaning method, the deposits are removed in the order shown in FIGS. 8C, 8B, and 8A. At this time, the suction device 81 may suck the deposit with a suction force larger than the gas supply force of the air supply device 82.
When the cleaning device 1 finishes passing through the entire wire W, the cleaning of the wire W is completed.

  Next, the weight 852 is removed from the wire W, and when the melting of the silicon raw material charged in the crucible 835 is completed, the pull chamber 833 is placed on the main chamber 831. Thereafter, the pressure in the pull chamber 833 is made substantially equal to the pressure in the main chamber 831, the gate valve 832 is opened, the seed crystal SC attached to the tip of the wire W is brought into contact with the silicon melt M, and then pulled up. The silicon single crystal SM is manufactured.

[Effects of Embodiment]
In the above embodiment, since the plurality of second discharge holes 311 are provided in the portion of the cylindrical portion 3 located inside the case 2, the wires are connected via the plurality of second discharge holes 311 closer to the wire W than the first discharge holes 23. A suction force can be applied to W. Therefore, if the suction force of the first discharge hole 23 is the same as the suction force of the suction hole of Patent Document 1, it is applied to the wire W via each second discharge hole 311 as compared with the configuration of Patent Document 1. The suction force per unit area can be increased, and the ability to remove deposits can be increased. In addition, since the plurality of second discharge holes 311 are arranged side by side in the movement direction of the wire W, it is possible to secure a range in which the removal capability is enhanced along the longitudinal direction of the wire W, and it is possible to suppress a reduction in removal efficiency. .

  Since the deposits on the wire W are separated by the gas supplied through the supply flow path 42, the deposit removal capability can be further enhanced.

  The cylindrical portion 3 is composed of a pair of cylindrical members 31, the first discharge holes 23 are provided on both sides of the supply connecting portion 4, and the supply flow channel 42 communicates with the inside of the pair of cylindrical members 31. And an outer channel 44 that communicates the inner channel 43 and the supply hole 24. For this reason, by driving the suction device 81 and the air supply device 82 while relatively moving the cleaning device 1 and the wire W, the suction process, the detachment process, and the suction process for the adhering matter to an arbitrary region W1 of the wire W are performed. Can be performed in this order, and the ability to remove deposits can be further enhanced.

  Four linear flow paths 443 constituting the outer flow path 44 are provided at each of six height positions, and the linear flow paths 443 adjacent in the vertical direction are shifted in the circumferential position of the supply connecting portion 4. The gas is guided to a plurality of positions along the circumferential direction of the wire W. For this reason, even if it does not rotate the wire W, a deposit | attachment can be removed from the whole area of the circumferential direction, and can be removed.

  Four second discharge holes 311 are provided at each of six height positions, and second discharge holes 311 adjacent in the vertical direction are provided so that the circumferential position of the cylindrical portion 3 is shifted. For this reason, even if it does not rotate the wire W, a deposit | attachment can be sucked and removed from the whole area of the circumferential direction.

  Since the case 2, the cylinder part 3, and the supply connection part 4 are each composed of a plurality of divided members, it is troublesome to insert the cleaning device 1 from the lower end of the wire W as in the case where these are composed of one member. The cleaning device 1 can be set on the wire W without performing work.

  By pulling up the silicon single crystal SM using the wire W from which deposits have been removed by the first cleaning method or the second cleaning method, generation of dislocations, slip dislocations, twin defects, and the like can be suppressed. It is possible to suppress a decrease in the non-defective product rate.

[Modification]
It should be noted that the present invention is not limited to the above-described embodiment, and various improvements and design changes can be made without departing from the scope of the present invention. The general procedure and structure may be other structures as long as the object of the present invention can be achieved.

For example, it is not necessary to provide one supply connecting portion 4, or two or more supply connecting portions 4 may be provided so as to be separated from each other. When two or more supply connection parts 4 are provided, it is preferable to provide the discharge part 11 between the adjacent supply connection parts 4.
The fluid supplied to the supply connecting portion 4 may be a liquid such as pure water for cleaning the wire W, and the liquid may be sucked by the discharge portion 11.

Instead of providing one of the two discharge units 11, one discharge unit 11 and one supply unit 12 may be provided. In this case, the suction process is performed on the arbitrary region W1 of the wire W after the separation process. Preferably configured to do so.
The number of the second discharge holes 311 and the linear flow path 443 provided at one height position may be three or less, or may be five or more. Moreover, the 2nd discharge hole 311 and the linear flow path 443 which are adjacent up and down may not be shifted in the circumferential direction, and may be shifted by an angle other than 30 degrees. One second discharge hole 311 and one linear flow path 443 may be provided.
Instead of the four linear flow channels 443 provided at one height position, a flow channel having a linear opening surrounding the wire W is provided, and the gas is guided toward the entire circumference of the wire W. Also good.

At least one of the case 2, the cylindrical portion 3, the supply connecting portion 4, and the cap 5 may be formed of a material other than the above-described materials.
You may comprise at least 2 among the case 2, the cylinder part 3, the supply connection part 4, and the cap 5 with one member.
At least one of the case 2, the cylindrical portion 3, and the supply connecting portion 4 may not be configured from a plurality of divided members.
The number of divisions of the case 2, the cylinder portion 3, and the supply connection portion 4 may be three or more.
The member to be cleaned of the present invention is not limited to the wire W used for the CZ method, but may be a shaft used for pulling a single crystal by the CZ method or the FZ method.
The cleaning method of the present invention may be performed while moving the cleaning device and the cleaning target member in the horizontal direction.

  EXAMPLES Next, although an Example demonstrates this invention still in detail, this invention is not limited at all by these examples.

In this example, the number of particles before and after cleaning using the cleaning device of the present invention was evaluated.
First, a surface particle meter (manufactured by CAT Clean Air Technology, Germany, surface particle measurement system CAT) was prepared. Furthermore, a wire W that was used in the pulling device 83 and was considered to have adhered matter in substantially the same state in the entire region in the length direction was prepared.
And the deposit | attachment of the wire W was attracted | sucked with the surface particle meter, and the process which measures the size and number of this attracted deposit | attachment was performed for 10 second. Thereafter, the same measurement was performed at three different points.
FIG. 10 shows the relationship between the average value of the number of deposits measured per 10 seconds at four measurement locations and the size of the deposits (comparative example).

  Next, the wire W after the measurement was cleaned based on the second cleaning method of the above embodiment. And the above-mentioned measurement was performed with respect to four places which are not measuring in the wire W after this cleaning, and the number and size of the attracted deposits were evaluated. The results are shown in FIG. 10 (Example).

  As shown in FIG. 10, it was confirmed that in all sizes, the number of deposits measured in the example was smaller than that in the comparative example. From this, it was confirmed that the deposit on the wire W can be appropriately removed by cleaning using the cleaning device 1 of the present invention.

  DESCRIPTION OF SYMBOLS 1 ... Cleaning apparatus, 11 ... Discharge part, 12 ... Supply part, 2 ... Case, 21 ... Hollow part, 22 ... Case fitting hole (fitting hole), 23 ... 1st discharge hole, 24 ... Supply hole, 3 ... Cylindrical part, 31 ... Cylinder member, 311 ... Second discharge hole, 4 ... Supply connecting part, 42 ... Supply flow path, 43 ... Inner flow path, 44 ... Outer flow path, 81 ... Suction device, 82 ... Air supply device, SM: Silicon single crystal, W: Wire (member to be cleaned), W1: Arbitrary region.

Claims (12)

A cleaning device for a linear or rod-shaped cleaning target member used for manufacturing a single crystal,
A case having a hollow portion;
The cleaning target member is provided with a cylindrical portion inserted so as to be relatively movable in the longitudinal direction thereof,
The case is provided with a fitting hole into which the cylindrical part is fitted in a state where a part of the cylindrical part is located in the hollow part, and a first discharge hole penetrating the case.
A portion of the cylindrical portion located in the hollow portion is provided with a second discharge hole penetrating the cylindrical portion, and the object to be cleaned is passed from the outside of the case via the first discharge hole and the second discharge hole. A cleaning device configured to be able to discharge the deposits of members. The cleaning device according to claim 1,
The cleaning device according to claim 1, wherein a plurality of the second discharge holes are provided in the cylindrical portion so that positions in the circumferential direction of the cylindrical portion are shifted. In the cleaning device according to claim 1 or 2,
A supply connecting portion provided in the hollow portion;
The case is provided with a supply hole penetrating the case,
The supply connecting portion is provided with a supply flow path that communicates the supply hole and the inside of the cylindrical portion, and the fluid supplied from the outside of the case through the supply hole and the supply flow path is cleaned. A cleaning device configured to be guided to a target member. The cleaning device according to claim 3.
The cylindrical portion includes a pair of cylindrical members arranged in the relative movement direction across the supply connecting portion,
The first discharge holes are respectively provided on both sides of the relative movement direction across the supply connecting portion,
The cleaning apparatus, wherein the supply flow path includes an inner flow path communicating with the inside of the pair of cylindrical members, and an outer flow path communicating the inner flow path and the supply hole. The cleaning apparatus according to claim 4.
The outer flow path is configured to guide the fluid toward a plurality of positions along a circumferential direction of the cleaning target member located in the inner flow path or toward the entire circumference of the cleaning target member. A cleaning device characterized. A cleaning device for a linear or rod-shaped cleaning target member used for manufacturing a single crystal,
A case having a hollow portion, and the member to be cleaned can be inserted so as to be relatively movable in the longitudinal direction;
A supply unit for guiding fluid supplied from the outside of the case to the member to be cleaned located in the hollow part ;
A cleaning apparatus, comprising: a pair of discharge portions provided on both sides in the relative movement direction with respect to the supply portion, for discharging deposits on the cleaning target member to the outside of the case. In the cleaning device according to any one of claims 3 to 6 ,
An air supply device that supplies the fluid; and a suction device that sucks and discharges the deposit.
The cleaning device, wherein the adhering material is discharged with a suction force larger than a supply force of the fluid of the air supply device. By using the cleaning device according to any one of claims 1 to 7, a cleaning method characterized by discharging the deposits to the outside. A cleaning device that covers an outer periphery of a linear or bar-shaped cleaning target member used for manufacturing a single crystal and is configured to be relatively movable in a longitudinal direction of the cleaning target member, A cleaning apparatus comprising: a supply unit for guiding the member to be cleaned; and a pair of discharge units provided on both sides in the relative movement direction with respect to the supply unit, for discharging deposits on the member to be cleaned to the outside. A method of cleaning a member to be cleaned using
While moving the cleaning target member relative to the cleaning device, the deposit in an arbitrary region of the cleaning target member is discharged to the outside through one discharge unit,
The deposits remaining in the arbitrary region are separated by the fluid supplied to the supply unit,
A cleaning method characterized in that the detached deposit is discharged to the outside through the other discharge portion. The cleaning method according to claim 9 , wherein
A cleaning method, wherein the deposit is discharged with a suction force larger than a supply force of the fluid. In the cleaning method according to any one of claims 8 to 10 ,
The cleaning method, wherein the member to be cleaned is a wire used for pulling up a silicon single crystal. A method for producing a silicon single crystal, comprising pulling up the silicon single crystal using the wire cleaned by the cleaning method according to claim 11 .

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