JP6486594B2 - 光学アレイを使用して微細構造を形成するためのフローリソグラフィ技法 - Google Patents
光学アレイを使用して微細構造を形成するためのフローリソグラフィ技法 Download PDFInfo
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- JP6486594B2 JP6486594B2 JP2014032697A JP2014032697A JP6486594B2 JP 6486594 B2 JP6486594 B2 JP 6486594B2 JP 2014032697 A JP2014032697 A JP 2014032697A JP 2014032697 A JP2014032697 A JP 2014032697A JP 6486594 B2 JP6486594 B2 JP 6486594B2
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- mask
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y10/00—Processes of additive manufacturing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y30/00—Apparatus for additive manufacturing; Details thereof or accessories therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C99/00—Subject matter not provided for in other groups of this subclass
- B81C99/0075—Manufacture of substrate-free structures
- B81C99/0095—Aspects relating to the manufacture of substrate-free structures, not covered by groups B81C99/008 - B81C99/009
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0037—Production of three-dimensional images
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2012—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image using liquid photohardening compositions, e.g. for the production of reliefs such as flexographic plates or stamps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/24—Curved surfaces
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
θ<10° → D>>BおよびD>>f
平行紫外線およびマスクの前の非スキャタリング拡散器が、設計された空間角度にわたる照明(照明コーン)をも提供する
レンズの開口数NA〜a/f、ここで、a=e/2である
倍率M=f/(f−D)=b/B
線形アレイに関し、1単位あたりのレンズの数は、
N〜(2*tan(θ)*D)/(k*b)であり、ここで、k=a/bである
例:D=100mm,θ=5.7°,B=1mm,NA=0.1,f=5mm
→N=20,W=20mm,a=0.5mm,e=1mm,b=50μm
幅Wの単位が、単一のロール上でスケールアップするように互いに隣り合うよう設置されるだろう。
Claims (7)
- 微細構造を合成するためのシステムであって、
光源と、
少なくとも1つのマスク特徴を有し、または生成し、前記光源からの光を伝えるように配置されている、マスクと、
プレカーサ材料がその上で搬送される、移動ターゲット基板と、
各光学素子が、プレカーサ材料中に微細構造を形成するために前記光源から前記マスクを介して移動ターゲット基板上に投影されるマスク特徴に対応するように、配置された光学素子のアレイと
を備え、
前記光学素子のアレイは、ミラーアレイであってシリンダの表面上に形成される、システム。 - 微細構造を合成するためのシステムであって、
光源と、
少なくとも1つのマスク特徴を有し、または生成し、前記光源からの光を伝えるように配置されている、マスクと、
各光学素子が前記光源から前記マスクを介して投影されるマスク特徴に対応するように配置された光学素子のアレイと、
前記光学素子に位置合わせされたくぼみが形成された表面を有するシリンダであって、前記表面は、前記光源からプレカーサ材料上に投影される光に基づいて微細構造が形成されるプレカーサ材料を搬送するように構成される、シリンダと
を備えるシステム。 - 前記プレカーサ材料のための供給源をさらに備え、前記供給源は、前記プレカーサ材料によって前記シリンダをコーティングするように構成される、請求項2に記載のシステム。
- 形成された粒子が前記シリンダから移されるターゲットをさらに備える、請求項2に記載のシステム。
- 前記光学素子のアレイは、前記シリンダの表面上にある、請求項2に記載のシステム。
- 前記光学素子のアレイは、前記シリンダの外部に配置される、請求項2に記載のシステム。
- 方法であって、
光によってプレカーサ材料上にマスク特徴を投影することと、
前記投影された光の焦点を前記プレカーサ材料上に合わせて、プレカーサ材料の合成を開始し、前記マスク特徴に基づいて微細構造または微細粒子を形成することと、
さらなる微細構造または微細粒子を形成するために、光が前記プレカーサ材料の異なる部分上に投影するように、前記プレカーサ材料を連続的に供給することと
を備え、
前記マスク特徴は、シリンダの表面上に形成されたミラーアレイによって前記プレカーサ材料上に投影される方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US13/835,631 | 2013-03-15 | ||
US13/835,631 US9829798B2 (en) | 2013-03-15 | 2013-03-15 | Flow lithography technique to form microstructures using optical arrays |
Publications (2)
Publication Number | Publication Date |
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JP2014182372A JP2014182372A (ja) | 2014-09-29 |
JP6486594B2 true JP6486594B2 (ja) | 2019-03-20 |
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JP2014032697A Active JP6486594B2 (ja) | 2013-03-15 | 2014-02-24 | 光学アレイを使用して微細構造を形成するためのフローリソグラフィ技法 |
Country Status (3)
Country | Link |
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US (1) | US9829798B2 (ja) |
EP (1) | EP2778786B1 (ja) |
JP (1) | JP6486594B2 (ja) |
Families Citing this family (6)
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GB2543755B (en) * | 2015-10-22 | 2020-04-29 | Schlumberger Holdings | Method for producing solid particles |
US10343390B2 (en) | 2015-11-13 | 2019-07-09 | Paxis Llc | Additive manufacturing apparatus, system, and method |
NZ769669A (en) * | 2018-04-06 | 2023-05-26 | Paxis Llc | Additive manufacturing apparatus, system, and method |
US10670540B2 (en) | 2018-06-29 | 2020-06-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photolithography method and photolithography system |
CN110658681B (zh) * | 2018-06-29 | 2022-10-11 | 台湾积体电路制造股份有限公司 | 光刻方法以及光刻系统 |
KR102361429B1 (ko) * | 2018-10-22 | 2022-02-10 | 고려대학교 산학협력단 | 미세입자 제조방법 |
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US6383690B1 (en) | 1999-12-09 | 2002-05-07 | Autologic Information International, Inc. | Platemaking system and method using an imaging mask made from photochromic film |
ATE408850T1 (de) | 2001-04-10 | 2008-10-15 | Harvard College | Mikrolinse zur projektionslithographie und ihr herstellungsverfahren |
CN101446773A (zh) * | 2001-11-07 | 2009-06-03 | 应用材料有限公司 | 无掩膜光子电子点格栅阵列光刻机 |
JP4097508B2 (ja) * | 2002-11-19 | 2008-06-11 | シャープ株式会社 | マイクロレンズ基板の作製方法およびマイクロレンズ露光光学系 |
US7477403B2 (en) * | 2004-05-27 | 2009-01-13 | Asml Netherlands B.V. | Optical position assessment apparatus and method |
JP2006032692A (ja) * | 2004-07-16 | 2006-02-02 | Nikon Corp | 波面収差測定装置、投影光学系の製造方法、投影光学系、投影露光装置の製造方法、投影露光装置、マイクロデバイスの製造方法、及びマイクロデバイス |
US7202939B2 (en) * | 2004-12-22 | 2007-04-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7709544B2 (en) | 2005-10-25 | 2010-05-04 | Massachusetts Institute Of Technology | Microstructure synthesis by flow lithography and polymerization |
US7948606B2 (en) | 2006-04-13 | 2011-05-24 | Asml Netherlands B.V. | Moving beam with respect to diffractive optics in order to reduce interference patterns |
AU2007324117B2 (en) | 2006-10-05 | 2014-03-06 | Massachussetts Institute Of Technology | Multifunctional encoded particles for high-throughput analysis |
US8518633B2 (en) | 2008-01-22 | 2013-08-27 | Rolith Inc. | Large area nanopatterning method and apparatus |
US8252517B2 (en) * | 2008-07-18 | 2012-08-28 | Massachusetts Institute Of Technology | Stop flow interference lithography system |
JP5853343B2 (ja) * | 2011-07-29 | 2016-02-09 | 株式会社ブイ・テクノロジー | マイクロレンズアレイを使用したスキャン露光装置 |
JP5760250B2 (ja) | 2011-08-03 | 2015-08-05 | 株式会社ブイ・テクノロジー | マイクロレンズアレイ及びそれを使用したスキャン露光装置 |
JP6056756B2 (ja) | 2011-09-06 | 2017-01-11 | 株式会社ニコン | 基板処理装置およびパターン露光方法 |
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2013
- 2013-03-15 US US13/835,631 patent/US9829798B2/en active Active
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Publication number | Publication date |
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EP2778786A3 (en) | 2016-04-06 |
JP2014182372A (ja) | 2014-09-29 |
US20140268077A1 (en) | 2014-09-18 |
EP2778786B1 (en) | 2020-09-02 |
EP2778786A2 (en) | 2014-09-17 |
US9829798B2 (en) | 2017-11-28 |
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