JP6482334B2 - Lamp heating device - Google Patents

Lamp heating device Download PDF

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JP6482334B2
JP6482334B2 JP2015049687A JP2015049687A JP6482334B2 JP 6482334 B2 JP6482334 B2 JP 6482334B2 JP 2015049687 A JP2015049687 A JP 2015049687A JP 2015049687 A JP2015049687 A JP 2015049687A JP 6482334 B2 JP6482334 B2 JP 6482334B2
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JP2016170964A (en
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服部　昌
昌 服部
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Koyo Thermo Systems Co Ltd
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Description

この発明は、太陽電池の電極の焼成処理等の加熱処理に用いられる加熱装置に関し、特に、ハロゲンランプ等の可視光〜近赤外域光源を備えたランプ加熱装置に関する。   The present invention relates to a heating device used for a heat treatment such as a baking treatment of an electrode of a solar cell, and more particularly to a lamp heating device provided with a visible light to near-infrared light source such as a halogen lamp.

太陽電池の電極の焼成処理等の加熱処理には、ハロゲンランプ等の可視光〜近赤外域光源を熱源としたランプ加熱装置が用いられている。ランプ加熱装置は、放射温度計によって被処理物の温度を測定し、被処理物の温度が適正な処理温度となるように、シングルループのフィードバック制御によって光源を駆動する（例えば、特許文献１参照。）。   A lamp heating apparatus using a visible light to near-infrared light source such as a halogen lamp as a heat source is used for a heat treatment such as a baking treatment of an electrode of a solar cell. The lamp heating device measures the temperature of the object to be processed with a radiation thermometer, and drives the light source by single-loop feedback control so that the temperature of the object to be processed becomes an appropriate processing temperature (see, for example, Patent Document 1). .)

特開２００６−１４７９４３号公報Japanese Patent Laid-Open No. 2006-147743

しかし、フィードバック制御による光源の光量の応答性は十分に速いが、光量に対する被処理物の温度の応答性は遅いため、シングルループによるフィードバック制御では被処理物の温度を目標値に素早く追従させることが難しい。このため、従来のランプ加熱装置を用いて、例えば、太陽電池の電極の焼成処理におけるスパイクアニールのように１００℃／秒を越える速度で被処理物の温度を急速に変化させる場合、制御パラメータの微調整等の煩雑な作業が必要になる。   However, the response of the light quantity of the light source by feedback control is sufficiently fast, but the response of the temperature of the object to be processed is slow with respect to the light quantity, so that the temperature of the object to be processed quickly follows the target value in the single-loop feedback control. Is difficult. For this reason, when the temperature of the workpiece is rapidly changed at a rate exceeding 100 ° C./second by using a conventional lamp heating device, for example, spike annealing in the baking treatment of the electrode of the solar cell, the control parameter Complicated work such as fine adjustment is required.

このような問題は、太陽電池の電極の焼成処理に限らず、ランプ加熱装置における加熱処理に一般的に生じる。   Such a problem generally occurs not only in the baking treatment of the electrodes of the solar battery but also in the heat treatment in the lamp heating apparatus.

この発明の目的は、光源の光量に対する被処理物の温度の応答性を光源の光量のフィードバック制御によって向上させることで、制御パラメータの微調整等の作業を必要とすることなく被処理物の温度を目標値に素早く追従させることができるランプ加熱装置を提供することにある。   The object of the present invention is to improve the responsiveness of the temperature of the object to be processed with respect to the light amount of the light source by feedback control of the light amount of the light source, so that the temperature of the object to be processed is not required, such as fine adjustment of control parameters. An object of the present invention is to provide a lamp heating device that can quickly follow a target value.

この発明のランプ加熱装置は、光源、温度センサ、光量センサ、温度制御部、光量制御部を備えている。光源は、被処理物に光を照射して加熱する。温度センサは、被処理物の温度を検出する。光量センサは、光源の光量を検出する。温度制御部は、温度センサの検出温度を温度目標値に一致させるための光源の制御量を出力する。光量制御部は、光量センサの検出光量が温度制御部から出力された光源の制御量に一致するように光源を駆動する。   The lamp heating device of the present invention includes a light source, a temperature sensor, a light amount sensor, a temperature control unit, and a light amount control unit. The light source irradiates and heats the object to be processed. The temperature sensor detects the temperature of the object to be processed. The light quantity sensor detects the light quantity of the light source. The temperature control unit outputs a control amount of the light source for making the temperature detected by the temperature sensor coincide with the temperature target value. The light amount control unit drives the light source so that the light amount detected by the light amount sensor matches the control amount of the light source output from the temperature control unit.

この構成によれば、温度センサの検出温度に基づいて被処理物を目標温度に一致させる第１のループのフィードバック制御に、光量センサの検出光量に基づいて光源の光量を制御する第２ループのフィードバック制御が追加される。被処理物を加熱する光源の光量が第２ループのフィードバック制御によって直接制御され、被処理物の温度が素早く目標温度に一致する。   According to this configuration, the second loop that controls the light amount of the light source based on the detected light amount of the light sensor is used for the feedback control of the first loop that matches the object to be processed with the target temperature based on the detected temperature of the temperature sensor. Feedback control is added. The light quantity of the light source for heating the object to be processed is directly controlled by the feedback control of the second loop, and the temperature of the object to be processed quickly matches the target temperature.

この構成において、光量センサは、検出感度波長域が光源の照射光の波長域に重複し、かつ光の波長の吸収域が被処理物の吸収域と略一致することが好ましい。光量センサの検出感度の高い波長域が被処理物を加熱する光の波長域に一致し、被処理物を加熱する波長域の光量を正確に検出することができる。   In this configuration, it is preferable that the light intensity sensor has a detection sensitivity wavelength region that overlaps with a wavelength region of irradiation light of the light source, and an absorption region of the wavelength of light substantially coincides with the absorption region of the object to be processed. The wavelength range with high detection sensitivity of the light quantity sensor coincides with the wavelength range of light for heating the object to be processed, and the amount of light in the wavelength area for heating the object to be processed can be accurately detected.

また、光量センサは、光源を挟んで被処理物の反対側に配置することが好ましい。光源の光を確実に受光できるとともに、被処理物における反射光を受光し難くなり、光源の光量を正確に検出することができる。   Moreover, it is preferable to arrange | position a light quantity sensor on the opposite side of a to-be-processed object on both sides of a light source. The light from the light source can be reliably received, and it becomes difficult to receive the reflected light from the object to be processed, so that the amount of light from the light source can be accurately detected.

本発明によれば、光量に対する被処理物の温度の応答性が光源の光量のフィードバック制御によって向上し、制御パラメータの微調整等の作業を必要とすることなく被処理物の温度を目標値に素早く追従させることができる。   According to the present invention, the responsiveness of the temperature of the object to be processed with respect to the light amount is improved by feedback control of the light amount of the light source, and the temperature of the object to be processed can be set to the target value without requiring work such as fine adjustment of control parameters. It can be made to follow quickly.

本発明の実施形態に係るランプ加熱装置の概略の断面図である。It is a schematic sectional drawing of the lamp heating apparatus which concerns on embodiment of this invention. 同ランプ加熱装置の要部の断面図である。It is sectional drawing of the principal part of the lamp heating apparatus. 同ランプ加熱装置の光量センサの放射率特性の一例を示す図である。It is a figure which shows an example of the emissivity characteristic of the light quantity sensor of the lamp heating apparatus. 同ランプ加熱装置の制御部のブロック図である。It is a block diagram of the control part of the lamp heating device. 同ランプ制御装置における被処理物の温度変化を示す図である。It is a figure which shows the temperature change of the to-be-processed object in the lamp | ramp control apparatus.

以下に、この発明の実施形態に係るランプ加熱装置について、図面を参照しつつ説明する。   Hereinafter, a lamp heating apparatus according to an embodiment of the present invention will be described with reference to the drawings.

図１に示すように、この発明の実施形態に係るランプ加熱装置１０は、炉体１、ハロゲンランプ２、温度センサ３、光量センサ４、制御部５及びランプ駆動部６を備え、被処理物Ｗを所定の温度に加熱する。被処理物Ｗは、一例としてシリコンを素材として板状を呈する太陽電池の電極材料である。   As shown in FIG. 1, a lamp heating apparatus 10 according to an embodiment of the present invention includes a furnace body 1, a halogen lamp 2, a temperature sensor 3, a light quantity sensor 4, a control unit 5, and a lamp driving unit 6, and an object to be processed. Heat W to a predetermined temperature. The workpiece W is an electrode material of a solar cell that exhibits a plate shape using silicon as an example.

炉体１は、断熱性を有する筐体であり、内部に被処理物Ｗが搬入出される。ハロゲンランプ２は、この発明の光源であり、炉体１の内部に、一例として上下に５個ずつ配置される。被処理物Ｗは、上下のハロゲンランプ２の間に搬入される。この発明の光源は、ハロゲンランプに限るものではなく、個数、配置位置、形状も図１に示す状態に限るものではない。   The furnace body 1 is a heat-insulating housing, and the workpiece W is carried into and out of the furnace body 1. The halogen lamps 2 are light sources according to the present invention, and five pieces are arranged inside the furnace body 1 as an example. The workpiece W is carried between the upper and lower halogen lamps 2. The light source of the present invention is not limited to the halogen lamp, and the number, arrangement position, and shape are not limited to the state shown in FIG.

温度センサ３は、一例として放射温度計であり、被処理物Ｗの温度を測定する。温度センサ３は、炉体１の外部に配置され、炉体１に形成された貫通孔１１を経由して、被処理物Ｗの底面に対向している。温度センサ３は、放射温度計に限るものではなく、例えば、被処理物Ｗの温度を直接測定するものであってもよい。   The temperature sensor 3 is a radiation thermometer as an example, and measures the temperature of the workpiece W. The temperature sensor 3 is arranged outside the furnace body 1 and faces the bottom surface of the workpiece W through a through hole 11 formed in the furnace body 1. The temperature sensor 3 is not limited to the radiation thermometer, and may be one that directly measures the temperature of the workpiece W, for example.

光量センサ４は、一例として、シリコンフォトダイオードであり、炉体１の外部に配置され、炉体１に形成された貫通孔１２を経由して、ハロゲンランプ２の光量を測定する。制御部５は、温度センサ３の検出温度及び光量センサ４の検出光量に基づいて作成したハロゲンランプ２の駆動データをランプ駆動部６に出力する。ランプ駆動部６は、駆動データに基づいてハロゲンランプ２を駆動する。制御部５及びランプ駆動部６が、この発明の駆動制御部に相当する。   The light quantity sensor 4 is a silicon photodiode as an example, and is disposed outside the furnace body 1 and measures the light quantity of the halogen lamp 2 through a through hole 12 formed in the furnace body 1. The control unit 5 outputs drive data of the halogen lamp 2 created based on the detected temperature of the temperature sensor 3 and the detected light amount of the light amount sensor 4 to the lamp drive unit 6. The lamp driving unit 6 drives the halogen lamp 2 based on the driving data. The control unit 5 and the lamp driving unit 6 correspond to the driving control unit of the present invention.

温度センサ３及び光量センサ４について、図２及び図３により、さらに詳細に説明する。図２に示すように、温度センサ３は、水平方向について炉体１内に配置されている２つのハロゲンランプ２の間に位置しており、貫通孔１１を経由して被処理物Ｗの底面に直接対向している。これによって、温度センサ３は、被処理物Ｗの温度を正確に測定できる。   The temperature sensor 3 and the light quantity sensor 4 will be described in more detail with reference to FIGS. As shown in FIG. 2, the temperature sensor 3 is located between the two halogen lamps 2 arranged in the furnace body 1 in the horizontal direction, and the bottom surface of the workpiece W through the through hole 11. Directly opposite. Thereby, the temperature sensor 3 can accurately measure the temperature of the workpiece W.

光量センサ４は、炉体１内に配置されている複数のハロゲンランプ２のうち、被処理物Ｗの全体の温度に与える影響が大きい例えば中央部のハロゲンランプ２に対向する位置で、被処理物Ｗや炉体１の内壁からの反射光の影響を受け難い位置に配置されている。   The light quantity sensor 4 has a large influence on the overall temperature of the workpiece W among the plurality of halogen lamps 2 arranged in the furnace body 1, for example, at a position facing the halogen lamp 2 in the central portion. It is disposed at a position where it is difficult to be affected by the reflected light from the object W or the inner wall of the furnace body 1.

光量センサ４は、貫通孔１２に備えられている減光フィルタ４１を介してハロゲンランプ２の光を受光する。また、光量センサ４は、放熱部材４２に取り付けられている。光量センサ４は、減光フィルタ４１及び放熱部材４２によってハロゲンランプ２の光による温度上昇を最小限に抑えられ、ハロゲンランプ２の光量を正確に測定できる。   The light quantity sensor 4 receives light from the halogen lamp 2 through a neutral density filter 41 provided in the through hole 12. The light quantity sensor 4 is attached to the heat radiating member 42. The light quantity sensor 4 can minimize the temperature rise caused by the light from the halogen lamp 2 by the neutral density filter 41 and the heat radiating member 42, and can accurately measure the light quantity of the halogen lamp 2.

なお、温度センサ３及び光量センサ４の配置位置は、炉体１の下方に限るものではなく、一方又は両方を炉体１の上方又は側方に配置することもできる。但し、平板状の被処理物Ｗの温度を放射温度計である温度センサ３によって測定するためには、温度センサ３を被処理物Ｗの主面に対向して配置することが望ましい。また、光量センサ４は、被処理物Ｗや炉体１の内壁からの反射光の影響を受け難い位置でハロゲンランプ２に直接対向させる必要がある。さらに、温度センサ３及び光量センサ４は、ともに制御部５に接続されるため、互いに近接して配置することが好ましく、例えば放熱部材４２を介して両者を一体的に固定することもできる。   Note that the arrangement positions of the temperature sensor 3 and the light quantity sensor 4 are not limited to the lower side of the furnace body 1, and one or both of them can be arranged above or to the side of the furnace body 1. However, in order to measure the temperature of the flat workpiece W by the temperature sensor 3 which is a radiation thermometer, it is desirable to arrange the temperature sensor 3 so as to face the main surface of the workpiece W. Further, the light quantity sensor 4 needs to be directly opposed to the halogen lamp 2 at a position where it is difficult to be influenced by the reflected light from the workpiece W and the inner wall of the furnace body 1. Furthermore, since both the temperature sensor 3 and the light quantity sensor 4 are connected to the control unit 5, it is preferable to arrange them close to each other. For example, both of them can be fixed integrally via the heat radiation member 42.

図３は、光量センサの放射率特性の一例として、シリコンフォトダイオードによって構成された光量センサ４の放射率特性を示している。同図に示すように、光量センサ４の放射率特性は、被処理物Ｗの素材であるシリコンの放射率特性と略一致する。また、シリコンフォトダイオードの検出感度波長域は、ハロゲンランプ２の発光波長とオーバラップする。放射率特性は光の吸収特性と等価と考えられる。このため、光量センサ４は、被処理物Ｗのハロゲンランプ２の光による加熱状態を、ハロゲンランプ２の光の光量によって正確に検出することができる。   FIG. 3 shows the emissivity characteristic of the light quantity sensor 4 formed of a silicon photodiode as an example of the emissivity characteristic of the light quantity sensor. As shown in the figure, the emissivity characteristic of the light quantity sensor 4 substantially matches the emissivity characteristic of silicon, which is the material of the workpiece W. Further, the detection sensitivity wavelength region of the silicon photodiode overlaps with the emission wavelength of the halogen lamp 2. The emissivity characteristic is considered equivalent to the light absorption characteristic. For this reason, the light quantity sensor 4 can accurately detect the heating state of the workpiece W by the light of the halogen lamp 2 by the light quantity of the light of the halogen lamp 2.

なお、この発明の光源は、ハロゲンランプ２に限るものではない。ハロゲンランプ２以外であっても、使用する光源の発光波長にオーバラップする検出感度波長域を有し、放射率特性が略一致する材料で構成された光量センサ４を使用することで、被処理物Ｗの光源の光による加熱状態を、光源の光の光量によって正確に検出することができる。   The light source of the present invention is not limited to the halogen lamp 2. Even if it is other than the halogen lamp 2, by using the light amount sensor 4 having a detection sensitivity wavelength region that overlaps with the emission wavelength of the light source to be used and made of a material whose emissivity characteristics substantially coincide, The heating state of the object W by the light of the light source can be accurately detected by the amount of light of the light source.

温度センサ３及び光量センサ４の検出値に基づくハロゲンランプ２の駆動制御について、図４により、さらに詳細に説明する。図４に示すように、制御部５は、温度制御器５１、光量制御器５２及び電力変換器５３を備えている。制御部５は、図示しない記憶部に予め記憶されているシーケンスに従って被処理物Ｗの温度目標値ＴＯを経時的に設定する。温度制御器５１は、温度センサ３が検出した被処理物Ｗの現在の温度ＴＲと温度目標値ＴＯとの差分に基づいて、ハロゲンランプ２が照射すべき光量目標値ＬＯを出力する。光量制御器５２は、光量センサ４が検出したハロゲンランプ２の現在の光量ＬＲと光量目標値ＬＯとの差分に基づいてハロゲンランプ２に供給すべき電力制御値を決定し、電力変換器５３に入力する。 The drive control of the halogen lamp 2 based on the detection values of the temperature sensor 3 and the light quantity sensor 4 will be described in more detail with reference to FIG. As shown in FIG. 4, the control unit 5 includes a temperature controller 51, a light amount controller 52, and a power converter 53. Control unit 5 over time to set the target temperature T O of the workpiece W in accordance with the sequence stored in advance in a storage unit not shown. Temperature controller 51, based on the difference between the current temperature T R and the temperature target value T O of the workpiece W which is a temperature sensor 3 detects a halogen lamp 2 outputs a light amount target value L O to be irradiated . The light quantity controller 52 determines a power control value to be supplied to the halogen lamp 2 based on the difference between the current light quantity LR and the light quantity target value L O of the halogen lamp 2 detected by the light quantity sensor 4, and the power converter 53.

即ち、制御部５は、温度センサ３の検出温度に基づいて被処理物Ｗを目標温度に一致させる第１のループのフィードバック制御に加えて、光量センサ４の検出光量に基づいてハロゲンランプ２の光量を制御する第２ループのフィードバック制御を行う。制御部５は、被処理物Ｗを加熱するハロゲンランプ２の光量を直接制御することができ、被処理物の温度を素早く目標温度に一致させることができ、被処理物Ｗの温度軌跡を１／１０秒単位の高速で制御することができる。   That is, the control unit 5 performs the control of the halogen lamp 2 based on the detected light quantity of the light quantity sensor 4 in addition to the feedback control of the first loop for matching the workpiece W with the target temperature based on the detected temperature of the temperature sensor 3. Perform feedback control of the second loop for controlling the amount of light. The control unit 5 can directly control the amount of light of the halogen lamp 2 that heats the workpiece W, can quickly match the temperature of the workpiece to the target temperature, and sets the temperature trajectory of the workpiece W to 1 It can be controlled at a high speed of / 10 seconds.

制御理論に示されるように、制御目標値が時系列的に変化しない一定値である定値制御を行う場合、制御系が積分極を１つ備えれば制御遅れを生じない（制御偏差が０）。これに対して、時系列的に変化する制御目標値に追随させるランピング制御を行う場合は、制御系が積分極を２つ備えることが望ましい。   As shown in the control theory, when performing a constant value control in which the control target value is a constant value that does not change in time series, if the control system has one integral pole, no control delay occurs (the control deviation is 0). . On the other hand, when performing ramping control to follow a control target value that changes in time series, it is desirable that the control system includes two integration poles.

一般的なＰＩＤ制御における制御系の伝達関数Ｃ（ｓ）は、比例ゲインをＫＰ、積分ゲインをＫＩ、微分ゲインをＫＤとして、
Ｃ（ｓ）＝ＫＰ＋ＫＩ・１／ｓ＋ＫＤ・ｓ
で表される。制御対象が積分極を有する場合は、１つのみの積分極１／ｓを有する単一制御ループの制御系であっても、ランピング制御における制御偏差を抑制できるが、一般に制御対象が積分極を有することは少ない。そこで、制御系に２つの制御ループを構成し、それぞれが積分極を有する２つの制御器を備えることで、ランピング制御における制御偏差を０にすることができる。 In general PID control, the transfer function C (s) of the control system is such that the proportional gain is K P , the integral gain is K I , and the differential gain is K D.
C (s) = K P + K I · 1 / s + K D · s
It is represented by When the controlled object has an integral pole, even a single control loop control system having only one integral pole 1 / s can suppress the control deviation in the ramping control, but generally the controlled object has an integral pole. There is little to have. Therefore, by forming two control loops in the control system and providing two controllers each having an integral pole, the control deviation in the ramping control can be made zero.

例えば、被処理物Ｗの温度を所望のピーク温度で保持するスパイクアニール処理を１つの制御ループのみを有する制御系を用いて行おうとすると、図５に示すように、所望のピーク温度に達した後に一定時間ｐにわたって目標値を保持する必要があり、目標値の調整作業が必要となる。また、制御遅れを生じて、制御対象を目標値に追随させることができない。   For example, when a spike annealing process for maintaining the temperature of the workpiece W at a desired peak temperature is performed using a control system having only one control loop, the desired peak temperature is reached as shown in FIG. Later, it is necessary to hold the target value for a certain time p, and adjustment of the target value is required. In addition, a control delay occurs, and the control target cannot follow the target value.

これに対して、２つの制御ループを構成して積分極を２つ備えた制御系では、目標値が所望のピーク値に達した時点で制御量を０とすることができ、スパイクアニール処理等の時系列的に変化する目標値に制御対象を追随させることができする。   On the other hand, in a control system comprising two control loops and having two integrating poles, the control amount can be set to zero when the target value reaches a desired peak value, and spike annealing processing, etc. It is possible to make the control target follow the target value that changes in time series.

したがって、光量に対する被処物Ｗの温度の応答性がハロゲンランプ２の光量のフィードバック制御によって向上し、制御パラメータの微調整等の作業を必要とすることなく被処理物Ｗの温度を目標温度軌跡に素早く追従させることができる。   Therefore, the responsiveness of the temperature of the workpiece W with respect to the light amount is improved by feedback control of the light amount of the halogen lamp 2, and the temperature of the workpiece W can be set to the target temperature locus without requiring fine adjustment of control parameters. Can follow quickly.

上述の実施形態の説明は、すべての点で例示であって、制限的なものではないと考えられるべきである。本発明の範囲は、上述の実施形態ではなく、特許請求の範囲によって示される。さらに、本発明の範囲には、特許請求の範囲と均等の意味および範囲内でのすべての変更が含まれることが意図される。   The above description of the embodiment is to be considered in all respects as illustrative and not restrictive. The scope of the present invention is shown not by the above embodiments but by the claims. Furthermore, the scope of the present invention is intended to include all modifications within the meaning and scope equivalent to the scope of the claims.

１−炉体
２−ハロゲンランプ（光源）
３−温度センサ
４−光量センサ
５−制御部
６−ランプ駆動部 1-furnace body 2-halogen lamp (light source)
3-temperature sensor 4-light quantity sensor 5-control unit 6-lamp drive unit

Claims (3)

被処理物に光を照射して加熱する光源と、
前記被処理物の温度を検出する温度センサと、
前記光源の光量を検出する光量センサと、
前記温度センサの検出温度を温度目標値に一致させるための前記光源の制御量を出力する温度制御部と、
前記光量センサの検出光量が前記温度制御部から出力された前記光源の制御量に一致するように前記光源を駆動する光量制御部と、
を備え、前記光量センサは、光の波長の吸収域が前記被処理物の吸収域と略一致する、ランプ加熱装置。 A light source that irradiates and heats the workpiece,
A temperature sensor for detecting the temperature of the workpiece;
A light amount sensor for detecting the light amount of the light source;
A temperature control unit that outputs a control amount of the light source for making the detected temperature of the temperature sensor coincide with a temperature target value;
A light amount control unit that drives the light source so that the detected light amount of the light amount sensor matches the control amount of the light source output from the temperature control unit;
The light amount sensor is a lamp heating apparatus , wherein an absorption region of a wavelength of light substantially coincides with an absorption region of the object to be processed . 前記光量センサは、検出感度波長域が前記光源の照射光の波長域に重複する、請求項１に記載のランプ加熱装置。 The lamp heating device according to claim 1 , wherein the light amount sensor has a detection sensitivity wavelength region overlapping a wavelength region of irradiation light of the light source. 前記光量センサは、前記光源を挟んで前記被処理物の反対側に配置される、請求項１又は２に記載のランプ加熱装置。 The lamp heating apparatus according to claim 1 , wherein the light amount sensor is disposed on the opposite side of the object to be processed with the light source interposed therebetween.
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