JP2000021854A5 - - Google Patents
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- JP2000021854A5 JP2000021854A5 JP1998184641A JP18464198A JP2000021854A5 JP 2000021854 A5 JP2000021854 A5 JP 2000021854A5 JP 1998184641 A JP1998184641 A JP 1998184641A JP 18464198 A JP18464198 A JP 18464198A JP 2000021854 A5 JP2000021854 A5 JP 2000021854A5
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- emission intensity
- plasma
- emission
- parameter
- range
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- 210000002381 Plasma Anatomy 0.000 claims 36
- 230000000875 corresponding Effects 0.000 claims 22
- 238000000034 method Methods 0.000 claims 20
- 238000004519 manufacturing process Methods 0.000 claims 19
- 239000004065 semiconductor Substances 0.000 claims 16
- 239000000758 substrate Substances 0.000 claims 13
- 230000003247 decreasing Effects 0.000 claims 4
- 230000003595 spectral Effects 0.000 claims 4
- 238000001514 detection method Methods 0.000 claims 2
- 230000001939 inductive effect Effects 0.000 claims 2
- 150000002500 ions Chemical class 0.000 claims 2
- 230000001276 controlling effect Effects 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
Claims (11)
前記プラズマの発光を分光する工程と、
分光された前記プラズマ光の各波長の発光強度を算出する工程と、
前記製造条件である複数のパラメータの値を増減変化させたときに当該パラメータの増減変化に伴って前記発光強度が変化する前記各波長の中から、少なくとも二以上の波長を対応波長として前記各パラメータごとに選択する工程と、
前記パラメータの値と、前記各対応波長の前記発光強度に基づく値との関係を示す基準発光データを前記各パラメータごとに作成する工程と、
前記パラメータの許容範囲に対応した、前記各対応波長の前記発光強度に基づく範囲である許容発光範囲を前記各パラメータごとに決定する工程と、
前記被処理基板に前記処理を施す際に得られる前記プラズマ光の前記各対応波長の発光強度である処理中発光強度を算出する工程と、
前記基準発光データに基づいて、前記処理中発光強度に応じた候補パラメータを前記各パラメータの中から選定する工程と、
前記処理中発光強度に基づく値が前記許容発光範囲を越えたときに、当該処理中発光強度に基づく値が前記許容発光範囲内になるまで前記候補パラメータの値を調整する工程と、
を備えることを特徴とする半導体製造条件設定方法。A method for setting manufacturing conditions of a semiconductor manufacturing process of performing processing on a substrate to be processed using plasma generated in a chamber,
Separating the emission of the plasma,
Calculating the emission intensity of each wavelength of the separated plasma light,
When the values of the plurality of parameters, which are the manufacturing conditions, are increased or decreased, the emission intensity changes with the increase or decrease of the parameter. A step of selecting for each,
A step of creating, for each of the parameters, reference emission data indicating a relationship between the value of the parameter and a value based on the emission intensity of each of the corresponding wavelengths,
A step of determining, for each of the parameters, an allowable emission range that is a range based on the emission intensity of the corresponding wavelength, corresponding to the allowable range of the parameter,
A step of calculating the in-process emission intensity, which is the emission intensity of the corresponding wavelength of the plasma light obtained when performing the process on the substrate to be processed,
Based on the reference emission data, selecting a candidate parameter according to the in-process emission intensity from the parameters,
When the value based on the in-process emission intensity exceeds the allowable emission range, adjusting the value of the candidate parameter until the value based on the in-process emission intensity falls within the allowable emission range,
A semiconductor manufacturing condition setting method, comprising:
前記プラズマの発光を分光する分光手段と、
前記プラズマ光の分光方向に分解能を有し、分光された前記プラズマ光の各波長成分を受光するとともに当該プラズマ光の各波長の強度に応じた電気信号を出力する光検出手段と、
前記光検出手段から出力された電気信号に基づいて、前記プラズマ光の各波長の発光強度を算出する発光強度算出手段と、
前記製造条件である複数のパラメータの値を増減変化させたときに当該パラメータの増減変化に伴って前記発光強度が変化する前記各波長の中から、少なくとも二以上の波長を対応波長として前記各パラメータごとに選択する対応波長選択手段と、
前記パラメータの値と、前記各対応波長の前記発光強度に基づく値との関係を示す基準発光データを前記各パラメータごとに作成する基準発光データ作成手段と、
前記パラメータの許容範囲に対応した、前記各対応波長の発光強度に基づく範囲である許容発光範囲を前記各パラメータごとに決定する許容発光範囲決定手段と、
前記被処理基板に前記処理を施す際に得られる前記プラズマ光の前記各対応波長の発光強度である処理中発光強度を算出する処理中発光強度算出手段と、
前記基準発光データに基づいて、前記処理中発光強度に応じた候補パラメータを前記各パラメータの中から選定する候補パラメータ選定手段と、
を備えることを特徴とする半導体製造条件設定装置。An apparatus for setting manufacturing conditions of a semiconductor manufacturing process of performing processing on a substrate to be processed using plasma generated in a chamber,
Spectral means for spectrally separating the emission of the plasma,
A photodetector that has a resolution in a spectral direction of the plasma light, and receives an individual wavelength component of the separated plasma light and outputs an electric signal corresponding to the intensity of each wavelength of the plasma light;
Based on the electric signal output from the light detection means, emission intensity calculation means for calculating the emission intensity of each wavelength of the plasma light,
When the values of the plurality of parameters, which are the manufacturing conditions, are increased or decreased, the emission intensity changes with the increase or decrease of the parameter. Corresponding wavelength selecting means to select for each,
Reference emission data creating means for creating, for each of the parameters, reference emission data indicating a relationship between the value of the parameter and a value based on the emission intensity of each corresponding wavelength,
Corresponding to the allowable range of the parameter, an allowable emission range determining means for determining an allowable emission range, which is a range based on the emission intensity of each corresponding wavelength, for each of the parameters,
An in-process emission intensity calculating unit that calculates an in-process emission intensity that is an emission intensity of the corresponding wavelength of the plasma light obtained when performing the process on the substrate to be processed,
Candidate parameter selection means for selecting a candidate parameter corresponding to the in-process light emission intensity from the parameters based on the reference light emission data,
A semiconductor manufacturing condition setting device, comprising:
前記処理中発光強度に基づく値が前記許容発光範囲を越えたときに、当該処理中発光強度に基づく値が前記許容発光範囲内になるまで前記パラメータ値制御手段に前記制御信号を送信するパラメータ値設定手段と、
を更に備えることを特徴とする請求項３記載の半導体製造条件設定装置。Parameter value control means for controlling the value of the candidate parameter by receiving a control signal,
A parameter value for transmitting the control signal to the parameter value control means until the value based on the in-process light emission intensity falls within the allowable light emission range when the value based on the in-process light emission intensity exceeds the allowable light emission range. Setting means;
The semiconductor manufacturing condition setting apparatus according to claim 3, further comprising:
請求項３〜請求項５の何れか一項記載の半導体製造条件設定装置を備え、
前記チャンバは、当該チャンバ内の前記プラズマ光を外部へ放出させるための監視窓を有し、
前記半導体製造条件設定装置の前記分光手段は、前記監視窓を通過した前記プラズマ光が入射する位置に配置されていることを特徴とする半導体製造装置。In a semiconductor manufacturing apparatus that generates a plasma in a chamber and performs processing on a substrate to be processed using the plasma to manufacture a semiconductor substrate,
A semiconductor manufacturing condition setting device according to any one of claims 3 to 5,
The chamber has a monitoring window for emitting the plasma light in the chamber to the outside,
The semiconductor manufacturing apparatus, wherein the spectroscopic means of the semiconductor manufacturing condition setting device is arranged at a position where the plasma light passing through the monitoring window is incident.
前記プラズマの発光を分光する工程と、
分光された前記プラズマ光の各波長の発光強度を算出する工程と、
前記条件である複数のパラメータの値を増減変化させたときに当該パラメータの増減変化に伴って前記発光強度が変化する前記各波長の中から、少なくとも二以上の波長を対応波長として前記各パラメータごとに選択する工程と、
前記パラメータの値と、前記各対応波長の前記発光強度に基づく値との関係を示す基準発光データを前記各パラメータごとに作成する工程と、
前記パラメータの許容範囲に対応した、前記各対応波長の前記発光強度に基づく範囲である許容発光範囲を前記各パラメータごとに決定する工程と、
前記被処理基板に前記処理を施す際に得られる前記プラズマ光の前記各対応波長の発光強度である処理中発光強度を算出する工程と、
前記基準発光データに基づいて、前記処理中発光強度に応じた候補パラメータを前記各パラメータの中から選定する工程と、
前記処理中発光強度に基づく値が前記許容発光範囲を越えたときに、当該処理中発光強度に基づく値が前記許容発光範囲内になるまで前記候補パラメータの値を調整する工程と、
を備えることを特徴とするプラズマ処理における条件設定方法。A method for setting conditions of a step of performing processing on a substrate to be processed using plasma,
Separating the emission of the plasma,
Calculating the emission intensity of each wavelength of the separated plasma light,
When the values of the plurality of parameters as the condition are increased or decreased, the emission intensity changes with the increase or decrease of the parameter. The step of selecting
A step of creating, for each of the parameters, reference emission data indicating a relationship between the value of the parameter and a value based on the emission intensity of each of the corresponding wavelengths,
A step of determining, for each of the parameters, an allowable emission range that is a range based on the emission intensity of the corresponding wavelength, corresponding to the allowable range of the parameter,
A step of calculating the in-process emission intensity, which is the emission intensity of the corresponding wavelength of the plasma light obtained when performing the process on the substrate to be processed,
Based on the reference emission data, selecting a candidate parameter according to the in-process emission intensity from the parameters,
When the value based on the in-process emission intensity exceeds the allowable emission range, adjusting the value of the candidate parameter until the value based on the in-process emission intensity falls within the allowable emission range,
A condition setting method in a plasma processing, comprising:
前記プラズマの発光を分光する分光手段と、
前記プラズマ光の分光方向に分解能を有し、分光された前記プラズマ光の各波長成分を受光するとともに当該プラズマ光の各波長の強度に応じた電気信号を出力する光検出手段と、
前記光検出手段から出力された電気信号に基づいて、前記プラズマ光の各波長の発光強度を算出する発光強度算出手段と、
前記条件である複数のパラメータの値を増減変化させたときに当該パラメータの増減変化に伴って前記発光強度が変化する前記各波長の中から、少なくとも二以上の波長を対応波長として前記各パラメータごとに選択する対応波長選択手段と、
前記パラメータの値と、前記各対応波長の前記発光強度に基づく値との関係を示す基準発光データを前記各パラメータごとに作成する基準発光データ作成手段と、
前記パラメータの許容範囲に対応した、前記各対応波長の発光強度に基づく範囲である許容発光範囲を前記各パラメータごとに決定する許容発光範囲決定手段と、
前記被処理基板に前記処理を施す際に得られる前記プラズマ光の前記各対応波長の発光強度である処理中発光強度を算出する処理中発光強度算出手段と、
前記基準発光データに基づいて、前記処理中発光強度に応じた候補パラメータを前記各パラメータの中から選定する候補パラメータ選定手段と、
を備えることを特徴とするプラズマ処理における条件設定装置。An apparatus for setting conditions of a step of performing processing on a substrate to be processed using plasma,
Spectral means for spectrally separating the emission of the plasma,
A photodetector that has a resolution in a spectral direction of the plasma light, and receives an individual wavelength component of the separated plasma light and outputs an electric signal corresponding to the intensity of each wavelength of the plasma light;
Based on the electric signal output from the light detection means, emission intensity calculation means for calculating the emission intensity of each wavelength of the plasma light,
When the values of the plurality of parameters as the condition are increased or decreased, the emission intensity changes with the increase or decrease of the parameter. Corresponding wavelength selection means for selecting
Reference emission data creating means for creating, for each of the parameters, reference emission data indicating a relationship between the value of the parameter and a value based on the emission intensity of each corresponding wavelength,
Corresponding to the allowable range of the parameter, an allowable emission range determining means for determining an allowable emission range that is a range based on the emission intensity of each corresponding wavelength for each of the parameters,
An in-process emission intensity calculation unit that calculates an in-process emission intensity that is an emission intensity of the corresponding wavelength of the plasma light obtained when performing the process on the substrate to be processed,
Candidate parameter selection means for selecting a candidate parameter corresponding to the in-process emission intensity from the parameters based on the reference emission data,
A condition setting apparatus for plasma processing, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18464198A JP3857813B2 (en) | 1998-06-30 | 1998-06-30 | Semiconductor manufacturing condition setting method and condition setting method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18464198A JP3857813B2 (en) | 1998-06-30 | 1998-06-30 | Semiconductor manufacturing condition setting method and condition setting method |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000021854A JP2000021854A (en) | 2000-01-21 |
| JP2000021854A5 true JP2000021854A5 (en) | 2004-07-15 |
| JP3857813B2 JP3857813B2 (en) | 2006-12-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18464198A Expired - Lifetime JP3857813B2 (en) | 1998-06-30 | 1998-06-30 | Semiconductor manufacturing condition setting method and condition setting method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3857813B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020060817A (en) * | 2001-01-12 | 2002-07-19 | 동부전자 주식회사 | Plasma process control system and method |
| KR100891376B1 (en) * | 2007-03-21 | 2009-04-02 | 차동호 | Combined sensor for detecting fault in a plasma process chamber incorporated with self plasma chamber |
| KR101028406B1 (en) * | 2009-08-12 | 2011-04-13 | (주)화백엔지니어링 | Method and device for detecting arcs |
| US9299541B2 (en) * | 2012-03-30 | 2016-03-29 | Lam Research Corporation | Methods and apparatuses for effectively reducing gas residence time in a plasma processing chamber |
| US10319649B2 (en) * | 2017-04-11 | 2019-06-11 | Applied Materials, Inc. | Optical emission spectroscopy (OES) for remote plasma monitoring |
| JP6553777B2 (en) * | 2018-07-04 | 2019-07-31 | 東芝メモリ株式会社 | Substrate processing apparatus and substrate processing method |
-
1998
- 1998-06-30 JP JP18464198A patent/JP3857813B2/en not_active Expired - Lifetime
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