KR102199776B1 - Apparatus and method for measuring substrate temperature - Google Patents

Abstract

The present invention relates to an apparatus and method for measuring the temperature of a substrate, and more particularly, a substrate temperature measuring apparatus for securing temperature uniformity of a substrate by accurately measuring the temperature of a substrate heated in a low temperature region in a rapid heat treatment apparatus And a method.
A substrate temperature measuring apparatus according to an embodiment of the present invention includes a heating lamp that emits light toward a substrate; A filter for filtering light emitted from the heating lamp and transmitted through the substrate according to a wavelength band; A light quantity measuring unit for measuring the quantity of light filtered by the filter; And a temperature calculator configured to calculate a temperature of the substrate from the amount of light measured by the light amount measuring unit.

Description

Apparatus and method for measuring substrate temperature

The present invention relates to an apparatus and method for measuring the temperature of a substrate, and more particularly, a substrate temperature measuring apparatus for securing temperature uniformity of a substrate by accurately measuring the temperature of a substrate heated in a low temperature region in a rapid heat treatment apparatus And a method.

A semiconductor device is typically formed by repeating unit processes such as ion implantation, thin film deposition, and heat treatment several times. Among them, the heat treatment process is applied in thermal oxidation of the substrate, thermal diffusion of implanted ions, and various annealing processes. Specifically, examples of the heat treatment process include annealing of recovery of crystallinity after implantation of impurity ions, contact characteristics of aluminum (Al) and silicon (Si), and improvement of interface characteristics of silicon (Si) and silicon oxide film (SiO ₂ ). There are annealing for, and sintering for forming silicide.

As a heat treatment apparatus for performing such a heat treatment process, there are a furnace and a rapid heat treatment (RTP) apparatus. In particular, the rapid heat treatment device has the advantage of minimizing the side effects of impurities, as the heat treatment process proceeds for a short period of time (usually tens of seconds to several minutes) while obtaining the desired effect by using high temperature. Widely used

The heat treatment apparatus supplies heat to a silicon substrate using a heating lamp such as a tungsten halogen lamp (wavelength range of 0.8 μm to 4 μm), and at this time, the temperature (energy state) of the substrate is measured through a temperature measuring device. It is a device that controls the heating lamp by receiving the measured value as feedback from the heating controller.

1 is a diagram showing a difference between a temperature of a substrate and an actual temperature measured in a conventional temperature measuring apparatus. In FIG. 1, a curve 10 shown by a dotted line represents a change in actual temperature of the substrate according to the heating process, and a curve 20 shown by a solid line represents a change in temperature measured by a conventional temperature measuring apparatus. In a conventional rapid heat treatment apparatus, heat treatment is performed through a plurality of heating lamps while a substrate is seated in a chamber, and the temperature of the substrate is measured in a non-contact manner through a temperature measuring device such as a pyrometer.

The temperature measuring device may collect the radiant energy emitted from the substrate and measure the temperature of the substrate in a non-contact method based on a relationship between the blackbody radiation temperature. The temperature measured by the temperature measuring device is fed back to a heating lamp through a heating control unit to control the temperature of the heating lamp.

On the other hand, the temperature measuring device of the rapid heat treatment apparatus measures the temperature using a wavelength band of 0.9 μm to 1.1 μm, and the measurement area is about 450° C. to 1250° C. By the way, the light transmittance of the substrate measured by the temperature measuring apparatus using a wavelength band of 0.9 μm to 1.1 μm has a characteristic that depends on the temperature of the substrate. For example, the light transmittance of the substrate at 25°C (room temperature) is about 0.6, and at 500°C or higher, it has a light transmittance of 0 (opaque).

That is, due to the material specificity of the silicon substrate, when the temperature of the substrate is less than 450°C (area A), a part of the light from the heating lamp passes through the substrate. Accordingly, in the case of a low-temperature substrate, a part of the light of the heating lamp passes through the substrate, so that the temperature measuring device cannot accurately measure the temperature of only the substrate, and a temperature measurement error occurs. That is, when the temperature of the substrate is less than 450°C, not only the amount of light generated from the substrate itself but also the amount of light of the heating lamp passing through the substrate is added and measured by the temperature measuring device. For this reason, in the case of the current heat treatment apparatus, it is not possible to accurately measure the temperature of the substrate in the low temperature region of less than 450°C, and thus the low temperature rapid heat treatment process cannot be processed. In other words, when the temperature of the substrate is less than 450°C, the temperature measured from the temperature measuring device is fed back to the heating control unit to control the temperature, and the heating control unit heats the substrate by applying an arbitrary output to the heating lamp. Uneven temperature may occur, and the substrate may be warped or cracked.

KR 10-0974013 B1

The present invention provides a substrate temperature measuring apparatus and method for accurately measuring the temperature of a substrate in a low temperature region.

In addition, the present invention provides a substrate temperature measuring apparatus and method capable of controlling the amount of light emitted from a heating lamp in real time by feeding back the measured temperature of the substrate.

The substrate temperature measuring apparatus according to the present invention for achieving the above object,

A heating lamp that emits light toward the substrate; A filter for filtering light emitted from the heating lamp and transmitted through the substrate according to a wavelength band; A light quantity measuring unit for measuring the quantity of light filtered by the filter; And a temperature calculator for calculating a temperature of the substrate from the amount of light measured by the light amount measuring unit,

It may further include a data unit for storing data on the amount of light according to the wavelength of each temperature of the substrate,

The filter may filter light passing through the substrate into a plurality of wavelength bands,

The temperature calculator may calculate the temperature of the substrate from the difference in the amount of light measured for each wavelength band,

The temperature calculator may calculate the temperature of the substrate from the amount of light in one selected wavelength band when the difference in the amount of light measured for each wavelength band is within a set range,

The filter may filter a wavelength band of 2 μm or less,

The temperature of the substrate calculated from the temperature calculator may be 450°C or less,

A heating control unit for controlling the heating lamp using the temperature of the substrate calculated from the temperature calculation unit may be further included.

In addition, the substrate temperature measurement method according to the present invention for achieving the above object,

Emitting light toward the substrate; Filtering light transmitted from the substrate according to a wavelength band; Measuring the amount of light of the filtered light; And calculating the temperature of the substrate by comparing the measured amount of light with data of the amount of light according to the wavelength of each temperature of the substrate stored in advance,

In the filtering process, the light passing through the substrate is filtered into a plurality of wavelength bands, and the process of calculating the temperature of the substrate is to calculate the temperature of the substrate by comparing the difference in the amount of light measured for each wavelength band with the data. Can,

In the process of calculating the temperature of the substrate, when the difference in the amount of light measured for each wavelength band is within a set range, the temperature of the substrate may be calculated by comparing the amount of light in one selected wavelength band with the data,

It may further include a process of controlling the light emitted toward the substrate by using the calculated temperature of the substrate.

According to the substrate temperature measuring apparatus and method according to the present invention, by measuring the temperature of the substrate from the amount of light emitted from the heating lamp and transmitted through the substrate, there is a remarkable effect of accurately measuring and controlling the temperature of the substrate even in a low temperature region. .

In addition, the light emitted from the heating lamp and transmitted through the substrate is filtered into a plurality of wavelength bands, and the temperature of the substrate is calculated from the difference in the amount of light measured for each wavelength band. It is possible to minimize the occurrence of measurement errors due to the intensity and the amount of light absorbed and radiated by the substrate.

In addition, when it is difficult to distinguish the exact temperature of the substrate due to the difference in the amount of light measured for each wavelength band, the temperature of the substrate is calculated from the amount of light in the selected wavelength band, thereby minimizing the occurrence of errors due to process variables and distinguishing clearly There is a remarkable effect of being able to calculate an accurate substrate temperature from the difference in the amount of light for each wavelength band.

As described above, by accurately calculating the temperature of the substrate in the low temperature region by the substrate temperature measuring apparatus and method according to the present invention, and controlling the power applied to the heating lamp based on the calculated substrate temperature, the temperature of the substrate is controlled even in the low temperature region. It is possible to control in a closed loop method and to ensure temperature uniformity of the substrate, thereby preventing damage to the substrate and securing the reliability of a low-temperature heat treatment process.

1 is a diagram showing a difference between a temperature of a substrate and an actual temperature measured in a conventional temperature measuring apparatus.
2 is a block diagram schematically showing a substrate temperature measuring apparatus according to an embodiment of the present invention.
3 is a diagram showing the amount of transmitted light according to the wavelength of each temperature of the substrate.
Fig. 4 is a diagram showing a state in which light passing through a substrate is filtered into one wavelength band.
5 is a diagram showing a state in which light passing through a substrate is filtered into a plurality of wavelength bands.
6 is a diagram illustrating a state in which light passing through a substrate is filtered according to a wavelength band.

The apparatus and method for measuring a substrate temperature according to the present invention provides a technical feature that can ensure temperature uniformity of a substrate by accurately measuring the temperature of a substrate heated in a rapid heat treatment apparatus in a low temperature region.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in a variety of different forms, only the embodiments of the present invention make the disclosure of the present invention complete, and the scope of the invention to those of ordinary skill in the art. It is provided to fully inform you. Like reference numerals in the drawings refer to the same elements.

2 is a block diagram schematically showing a substrate temperature measuring apparatus according to an embodiment of the present invention.

Referring to FIG. 2, an apparatus for measuring a substrate temperature according to an embodiment of the present invention includes: a heating lamp 100 for emitting light toward a substrate S; A filter 200 for filtering light emitted from the heating lamp 100 and passing through the substrate S according to a wavelength band; A light quantity measuring unit 300 measuring the quantity of light filtered from the filter 200; And a temperature calculator 400 that calculates a temperature of the substrate S from the amount of light measured by the light amount measuring unit 300.

The heating lamp 100 is arranged in a number of radial zones in a bulb type or a linear type. The heating lamp 100 may be implemented as a tungsten halogen lamp or an arc lamp, and heats the substrate S by emitting light in the form of visible and infrared rays. As the heating lamp 100, a known heating lamp 100 having various configurations for heating by emitting light to the substrate S may be used, and a detailed description thereof will be omitted.

The filter 200 filters light emitted from the heating lamp 100 and transmitted through the substrate S according to a wavelength band. The filter 200 may be a band pass filter that passes light passing through the substrate S for a predetermined wavelength band and erases the remaining wavelength bands except for the light passing through the substrate S. It may be a band pass filter that filters transmitted light into one or a plurality of wavelength bands.

In the case of a conventional substrate temperature measuring device, in order to measure the temperature of the substrate S in the low temperature region of 450°C or less, the radiant energy of the long wavelength band of 5㎛ to 15㎛ emitted by the substrate S is measured and converted into temperature. And calculated. However, in the high temperature region of 450° C. or higher, the temperature of the substrate S is measured using a wavelength band of 2 μm or less. In order to measure the temperature of both the low and high temperature substrates, the temperature of the substrate S The temperature had to be measured using a plurality of devices having different wavelength band ranges according to.

The substrate temperature measuring apparatus according to an embodiment of the present invention measures the temperature of the substrate S by filtering the light passing through the substrate S in a wavelength band of 2 μm or less. The temperature can be calculated by measuring the amount of light transmitted through the substrate. In the high temperature region of 450°C or higher, the temperature is measured by measuring the amount of light radiated by the substrate S in the opaque state of the substrate S according to the conventional temperature measurement method. By calculating, it is possible to measure and control the temperature from a low-temperature substrate to a high-temperature substrate using one element.

In addition, the filter 200 may use a filter 200 that selects and filters one or more wavelength bands in a wavelength band range of 2 μm or less. For example, the filter 200 may filter a wavelength band of 1.1 μm and 1.2 μm, or a wavelength band of 1.2 μm and 1.3 μm, respectively, and the filtering wavelength band range extends from 1.1 μm to 1.3 μm. The filter 200 may be used. The wavelength band filtered by the filter 200 is determined by the filtering material, and it can be manufactured by coating various dieletric materials corresponding to a desired predetermined wavelength band on a transparent substrate such as sapphire or quartz. It is not limited to

The light quantity measuring unit 300 measures the quantity of filtered light. That is, the light amount measuring unit 300 measures a wavelength of 2 μm or less filtered from light emitted from the heating lamp 100 and transmitted through the substrate S to calculate the amount of light. Reading the temperature using light emitted from an object uses the following blackbody radiation theory equation, and the process is widely known, and a detailed description thereof will be omitted.

The temperature calculating unit 400 calculates the temperature of the substrate S from the amount of light measured by the light amount measuring unit 300. The light transmittance of the substrate S in the wavelength band of 1 μm to 2 μm or less has a property that depends on the temperature of the substrate S. For example, the light transmittance of the silicon substrate S at room temperature of 25° C. is about 0.6, and at about 450° C. or more, the light transmittance is close to 0, which is an opaque state. That is, in the wavelength band of 1㎛ to 2㎛ or less, the temperature of the substrate (S) is inversely proportional to the light transmittance of the substrate (S), and the light transmittance of the substrate (S) is proportional to the amount of light transmitted through the substrate (S). do. Accordingly, the temperature calculator 400 can calculate the temperature of the substrate S from the amount of light emitted from the heating lamp 100 and transmitted through the substrate S. Hereinafter, a silicon substrate whose transmittance varies depending on temperature is described as an example, but the present invention is not limited thereto, and the present invention can be applied to all types of substrates whose light transmittance depends on temperature.

Hereinafter, a process in which the temperature calculator 400 measures the temperature of the substrate S from the amount of light transmitted through the substrate S will be described in detail.

3 is a diagram showing an amount of transmitted light according to a wavelength for each temperature of a substrate, and FIGS. 4 and 5 are diagrams each showing a mode of filtering light passing through the substrate into one or a plurality of wavelength bands. In addition, FIG. 6 is a diagram illustrating a state in which light passing through a substrate is filtered according to a wavelength band. In FIGS. 4 and 5, reference numeral 200 denotes a band-pass filter for filtering light passing through the substrate S according to a wavelength band.

As shown in FIG. 3, it can be seen that the temperature of the substrate S in the low temperature region of 450° C. or lower exhibits a constant tendency in a specific wavelength band. For example, in the case of the substrate S at 100°C, the light passing through the substrate S from the heating lamp 100 has an amount of light of about 0.17 (au) in the wavelength band of 1.1 μm, and in the wavelength band of 1.2 μm. It has an amount of light of about 0.43 (au). That is, since the amount of light passing through the substrate S in a certain wavelength band is represented by the temperature, the amount of light emitted from the heating lamp 100 and passing through the substrate S is filtered in a wavelength band of 1.1 μm. When measured as (au), the temperature of the substrate S may be calculated as 100°C (see FIG. 4).

The substrate temperature measuring apparatus according to the embodiment of the present invention calculates the temperature of the substrate S from the amount of light transmitted through the substrate S. To this end, data on the amount of light according to the wavelength of each temperature of the substrate S It may further include a data unit 500 is stored. The data unit 500 stores data on the amount of light according to the wavelength of each temperature of the substrate S, and the temperature measuring unit compares the amount of light of the data with the amount of transmitted light measured by the light amount measuring unit 300 The temperature of (S) can be calculated. The data stored in the data unit 500 may include data obtained by directly measuring the amount of light emitted by the heating lamp 100 without passing through a substrate. The data of the amount of light of the heating lamp 100 itself and the substrate S It goes without saying that data on the amount of light according to the wavelength of each temperature of the substrate S may be included according to the transmittance of each temperature.

The substrate temperature measuring apparatus according to the embodiment of the present invention can calculate the temperature of the substrate S in the low temperature region from the amount of light transmitted through the substrate S for one wavelength band as described above, but preferably, heating The light emitted from the lamp 100 and transmitted through the substrate S is filtered into a plurality of wavelength bands by the filter 200, and the temperature measuring unit determines the temperature of the substrate S from the difference in the amount of light measured for each wavelength band. Can be calculated.

In the case of calculating the temperature of the substrate S from the amount of light transmitted through the substrate S for one wavelength band, the distance of the heating lamp 100 from the substrate S and the amount of light emitted by the heating lamp 100 There is a possibility that an error may occur in the amount of light measured by the light amount measuring unit 300 due to the intensity and the amount of light absorbed and radiated by the substrate S, and a separate complicated error correction process must be performed.

Accordingly, as shown in FIG. 5, the substrate temperature measuring apparatus according to the embodiment of the present invention filters light emitted from the heating lamp 100 and passing through the substrate S into a plurality of wavelength bands by the filter 200. In addition, the temperature measurement unit calculates the temperature of the substrate S from the difference in the amount of light measured for each wavelength band, thereby preventing the above error from occurring without a separate error correction means.

For example, the light emitted from the heating lamp 100 and transmitted through the substrate S is filtered into a wavelength band of 1.1 μm and a wavelength band of 1.2 μm, and the difference between the amount of light measured for each wavelength band, that is, 1.1 μm The difference between the amount of light in the wavelength band of, and the amount of light in the 1.2 µm wavelength band, or the ratio of the amount of light in the wavelength band of 1.1 µm and the amount of light in the 1.2 µm wavelength band, is the difference in the amount of light or the ratio of the amount of data to the amount of light according to the wavelength of each temperature of the substrate (S) It is possible to calculate the temperature of the substrate S corresponding thereto by comparing with each.

As described above, when the light emitted from the heating lamp 100 and transmitted through the substrate S is filtered into a plurality of wavelength bands and the temperature of the substrate S is calculated from the difference value of the amount of light measured for each wavelength band, the substrate The error for each wavelength band generated by the distance of the heating lamp 100 from (S), the intensity of light emitted by the heating lamp 100, and the amount of light absorbed and radiated by the substrate S, is canceled. As a result, it is possible to accurately measure the temperature of the substrate S in the low temperature region.

In addition, when calculating the temperature of the substrate S from the difference in the amount of light according to the plurality of wavelength bands, the temperature calculator 400 determines the amount of light in one selected wavelength band when the difference in the amount of light measured for each wavelength band is within a set range. The temperature of the substrate S can be calculated.

When the difference in the amount of light in different wavelength bands is very small, it is not easy to accurately distinguish the temperature of the substrate S from data on the amount of light according to the wavelength of each temperature of the substrate S due to the difference in the amount of light. For example, assuming a case of a completely transparent substrate having a transmittance of 1 and a completely opaque substrate having a transmittance of 0 of the substrate S, the difference in the amount of light, that is, the difference in the amount of light, is all 0, All of the light quantity ratios are 1. In this case, it is difficult to accurately calculate the temperature of the substrate S due to the difference in the amount of light in each wavelength band.

Accordingly, the temperature measuring unit may calculate the temperature of the substrate S from the amount of light in one arbitrarily selected wavelength band when the difference in the amount of light measured for each wavelength band is within a preset range set by the user. This minimizes the occurrence of errors due to factors such as the distance of the heating lamp 100 from the substrate S, the intensity of light emitted by the heating lamp 100, and the amount of light absorbed and radiated by the substrate S. It is possible to calculate the exact temperature of the substrate S from the difference in the amount of light for each divided wavelength band.

Preferably, the substrate temperature measuring apparatus according to an embodiment of the present invention further includes a heating control unit 600 that controls the heating lamp 100 by using the temperature of the substrate S calculated from the temperature calculation unit 400. Can include. The heating control unit 600 feedback-controls the heating lamp 100 by using the temperature of the substrate S calculated by the temperature calculation unit 400.

The temperature of the substrate S is accurately calculated by the temperature calculation unit 400, and feedback is applied to the heating lamp 100 based on the calculated temperature of the substrate S. In addition, it is possible to control in a closed loop method instead of an open loop method that does not send a feedback signal to the heating lamp 100, and it is possible to secure the temperature uniformity of the substrate S, resulting in temperature non-uniformity. It is possible to prevent damage to the substrate S due to this, and to secure the reliability of a low-temperature heat treatment process such as metal silicide.

Hereinafter, a method of measuring a substrate temperature according to an embodiment of the present invention will be described in detail. A description of the above-described method for measuring the substrate temperature will be omitted.

A method for measuring a substrate temperature according to an embodiment of the present invention includes the process of emitting light toward a substrate (S); Filtering light transmitted from the substrate S according to a wavelength band; Measuring the amount of light of the filtered light; And a process of calculating the temperature of the substrate S by comparing the measured amount of light with data of the amount of light according to the wavelength of each temperature of the substrate S previously stored.

When light is emitted from the heating lamp 100 to heat the substrate S in the rapid heat treatment process, the filter 200 filters the light transmitted from the substrate S according to the wavelength band. Here, the filter 200 may filter the light transmitted from the substrate S in a range of 2 μm or less according to one wavelength band, and the light quantity measurement unit 300 filters according to one wavelength band as above. Measure the amount of light generated. Thereafter, the temperature calculator 400 may calculate the temperature of the substrate S in the low temperature region by comparing the measured amount of light with data of the amount of light according to the wavelength of each temperature of the substrate S previously stored. Here, the data of the amount of light according to the wavelength for each temperature may include data obtained by directly measuring the amount of light emitted by the heating lamp 100 without passing through the substrate, and the data of the amount of light of the heating lamp 100 itself and the substrate S As described above, it is possible to include data on the amount of light according to the wavelength of each temperature of the substrate S according to the transmittance of each temperature.

In addition, in the method of measuring the temperature of a substrate according to an embodiment of the present invention, in the process of filtering the light transmitted from the substrate S according to the wavelength band, the light transmitted through the substrate S is filtered into a plurality of wavelength bands, and the In the process of calculating the temperature of the substrate S, the temperature of the substrate S can be calculated by comparing the difference in the amount of light measured for each wavelength band with data of the amount of light according to the temperature of the substrate S stored in advance. have.

As described above, when the light emitted from the heating lamp 100 and transmitted through the substrate S is filtered into a plurality of wavelength bands, the temperature of the substrate S is calculated from the difference value of the amount of light measured for each wavelength band. , The error of each wavelength band generated by the distance of the heating lamp 100 from the substrate S, the intensity of light emitted by the heating lamp 100, and the amount of light absorbed and radiated by the substrate S is canceled. As described above, it is possible to accurately measure the temperature of the substrate S in the low temperature region.

In addition, in the process of calculating the temperature of the substrate S in the method for measuring the temperature of the substrate according to the embodiment of the present invention, when the difference in the amount of light measured for each wavelength band is within the range set by the user, the amount of light in one selected wavelength band By calculating the temperature of the substrate S in comparison with the data of the amount of light according to the wavelength of each temperature of the substrate S, the occurrence of errors according to process variables is minimized, and at the same time, the exact substrate ( There is a remarkable effect that can calculate the temperature of S).

Preferably, the method of measuring the substrate temperature according to the embodiment of the present invention may further include a process of controlling the light emitted from the heating lamp 100 by using the temperature of the substrate S calculated by the above process. have. By accurately calculating the temperature of the substrate S in the low temperature region and controlling the power applied to the heating lamp 100 based on the calculated substrate S temperature, the temperature of the substrate S is closed in a low temperature region. It is possible to control in a (closed loop) method, and to ensure the temperature uniformity of the substrate (S), it is possible to prevent damage to the substrate (S) and to secure the reliability of the low-temperature heat treatment process.

In the above, preferred embodiments of the present invention have been described and illustrated using specific terms, but such terms are only for clearly describing the present invention, and embodiments of the present invention and the described terms are the technical spirit of the following claims. And it is obvious that various changes and changes can be made without departing from the range. These modified embodiments should not be individually understood from the spirit and scope of the present invention, but should be said to fall within the scope of the claims of the present invention.

100: heating lamp 200: filter
300: light quantity measurement unit 400: temperature calculation unit
500: data unit 600: heating control unit

Claims (12)

A heating lamp that emits light toward the substrate;
A filter for filtering light emitted from the heating lamp and passing through the substrate into a plurality of wavelength bands including a first wavelength band and a second wavelength band different from the first wavelength band;
A light quantity measuring unit for measuring the quantity of light in the first wavelength band and the second wavelength band of the light filtered by the filter;
A data unit for pre-stored data on an amount of light in the first wavelength band and the second wavelength band of light transmitted through the substrate for each substrate temperature; And
A temperature calculator for calculating a temperature of the substrate from the amount of light measured by the light amount measuring unit,
The temperature calculation unit,
Calculating a difference between the amount of light measured in the first wavelength band and the amount of light measured in the second wavelength band,
When the difference between the calculated amount of light is within the set range, the temperature of the substrate is calculated by comparing the amount of light measured in one of the first wavelength band and the second wavelength band with data on the amount of light stored in the data unit. And
When the difference in the calculated amount of light is out of the set range, the substrate temperature having the difference in the measured amount of light is determined from the data on the amount of light in the first wavelength band and the second wavelength band stored in the data unit, and the substrate A substrate temperature measuring device that calculates the temperature of.
delete delete delete delete The method according to claim 1,
The filter is a substrate temperature measuring apparatus for filtering a wavelength band of 2 μm or less.
The method according to claim 1,
A substrate temperature measuring apparatus in which the temperature of the substrate calculated from the temperature calculator is 450°C or less.
The method according to claim 1,
The substrate temperature measuring apparatus of a rapid heat treatment apparatus further comprising a heating control unit for controlling the heating lamp using the temperature of the substrate calculated from the temperature calculation unit.
Emitting light toward the substrate;
Filtering the light transmitted from the substrate into a plurality of wavelength bands including a first wavelength band and a second wavelength band different from the first wavelength band;
Measuring an amount of light in the first wavelength band and the second wavelength band of the filtered light, respectively; And
Computing the temperature of the substrate by comparing the measured amount of light with data on the amount of light in the first wavelength band and the second wavelength band of light transmitted through the substrate according to the substrate temperature previously stored in the data unit. Including,
The process of calculating the temperature of the substrate,
Calculating a difference between the amount of light measured in the first wavelength band and the amount of light measured in the second wavelength band; And
When the difference between the calculated amount of light is within the set range, the temperature of the substrate is calculated by comparing the amount of light measured in one of the first wavelength band and the second wavelength band with data on the amount of light stored in the data unit. and,
When the difference in the calculated amount of light is out of the set range, the temperature of the substrate having the difference in the measured amount of light is checked from the data on the amount of light in the first and second wavelength bands stored in the data unit. A method of measuring a substrate temperature comprising a; process of calculating a temperature.
delete delete The method of claim 9,
A method of measuring a substrate temperature of a rapid heat treatment apparatus further comprising the process of controlling the light emitted toward the substrate using the calculated temperature of the substrate.

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