JP2001244212A - Method for controlling incandescent lamp and light irradiating heating equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To heat an object in a uniform temperature distribution with a high temperature rise rate. SOLUTION: A high-order controller 11 stores the power distributing pattern to each zone for raising the temperature of a wafer in the uniform temperature distribution found by experiments. A low-order controller 12 stores a conversion formula used at the time of converting the input power of lamps in each zone into input voltages. When the object 2 is heat-treated, the controller 11 calculates a power command signal given to the lamps in each zone in accordance with the power distribution pattern and outputs the calculated signal to the low-order controller 12. The controller 12 converts the power command signal sent from the controller 11 into a voltage command signal based on the conversion formula, and sends the converted signal to a constant-voltage control section 13. Upon receiving the voltage command signal, the control section 13 controls the voltage supplied to each lamp 1 so that the voltage match the voltage command signal.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light irradiation type heat treatment for rapidly heating an object to be processed such as a semiconductor wafer by irradiating it with light containing infrared rays in order to perform processes such as film formation, diffusion, annealing, and epitaxial growth. And a light irradiation type heat treatment apparatus.

[0002]

2. Description of the Related Art Light irradiation type heat treatment in a semiconductor manufacturing process is performed over a wide range such as film formation, diffusion, annealing, and epitaxial growth. In each of these processes, a semiconductor wafer (hereinafter, referred to as a wafer) to be processed is heated to a high temperature. If a light irradiation type heat treatment apparatus using an infrared lamp as a light source is used as a heating source, the wafer is rapidly heated, and the temperature is raised to a temperature of 1000 ° C. or more in several seconds to several tens of seconds. Heating is maintained for a certain period of time, and light irradiation is stopped to allow rapid cooling. If the temperature distribution becomes non-uniform in the wafer while the wafer is being heated / maintained at a constant temperature / cooled, a phenomenon called slip on the wafer, that is, a defect of crystal dislocation, may occur, resulting in a defective product. is there. Therefore, when a wafer is heat-treated using a light irradiation type heat treatment apparatus, it is necessary to raise the temperature / maintain a constant temperature / cool so that the temperature distribution of the wafer becomes uniform. At the time of cooling, the temperature of the peripheral portion of the wafer decreases faster than that of the central portion. Therefore, for example, a method of cooling while slightly heating the peripheral portion of the wafer is adopted.

[0003] In the light irradiation type heat treatment apparatus, an apparatus described in Japanese Patent Application Laid-Open No. 11-8204 is an example of an apparatus capable of performing light irradiation so that the temperature distribution of a wafer becomes uniform. In the light source unit of the device described in the publication, a plurality of circular incandescent lamps are arranged concentrically and divided into several zones along the circumferential direction of the wafer. Then, by controlling the power of the lamp for each zone, the temperature distribution in the circumferential direction of the wafer is controlled.

FIG. 7 shows an example of the configuration of an incandescent lamp lighting control device for controlling lamp power in a conventional light irradiation type heat treatment device. FIG. 1 shows the configuration of a control device that controls one divided zone. In FIG. 7, one incandescent lamp is provided in one zone, but a plurality of lamps may be provided in one zone. In FIG. 7, 1
Reference numeral 00 denotes a control unit including a CPU and the like.
From 04, set values such as a heating rate and an attained temperature are input.
101 is a temperature controller (hereinafter referred to as a temperature controller), 102 is a thyristor unit, and 103 is a temperature detector. The temperature controller 101, the thyristor unit 102, and the temperature detector 103
Are provided for each zone. Reference numeral 1 denotes an incandescent lamp. As the lamp 1, a halogen lamp (hereinafter, a lamp) having a filament that efficiently emits infrared rays is generally used. Light including infrared rays emitted from a lamp 1 provided in each zone is applied to the wafer 2 to heat the wafer 2.

The incandescent lamp lighting control device shown in FIG. 7 controls the temperature of the wafer 2 as follows. A temperature rising rate (for example, 50 ° C.)
/ Sec), a reached temperature (for example, 1000 ° C.), and a set value relating to temperature and time, such as a constant temperature holding time.
The input unit 104 outputs each set value to the control unit 100. The temperature of the wafer 2 corresponding to each zone of the light source unit is detected at regular intervals by a temperature detector 103 (such as a thermocouple or a radiation thermometer) and fed back to the temperature controller 101. The temperature controller 101 outputs to the thyristor unit 102 a control signal corresponding to a deviation between the temperature set value sent from the control unit 100 and the temperature of the wafer 2 detected by the temperature detector 103. The voltage value and the current value of the lamp 1 are fed back to the thyristor unit 102, and the thyristor unit 10
2 controls the lamp power based on the control signal. The above-mentioned lamp lighting control is repeated to control the temperature of the wafer.

Here, the reason for controlling the lamp power by feeding back the voltage value and the current value input to the lamp 1 as described above is as follows. The radiant energy from the lamp 1 depends on the lamp input power. But,
Generally, incandescent lamps are designed and manufactured to the same standard,
The power value varies about ± 5% with respect to a certain voltage value or current value. That is, even if the same voltage is supplied to the lamp 1 (or the same current is supplied), the power value differs for each lamp 1 and the radiant energy output from the lamp also differs. That is, even if the voltage or current of the incandescent lamp is controlled to be constant, it is difficult to control the radiant energy to a predetermined value because the power varies depending on the lamp. Therefore, in the light irradiation type heat treatment apparatus, as shown in FIG. 7, the voltage value and the current value input to the lamp 1 are fed back to control the lamp power to be constant and the radiant energy to a predetermined value. This is generally done. This is called constant power control. As mentioned above,
When the lamp power is controlled in the light irradiation type heat treatment apparatus, two types of feedback control are performed, that is, feedback of temperature and feedback of current and voltage input to the lamp.

[0007]

As described above, the light irradiation type heat treatment in the semiconductor manufacturing process involves film formation, diffusion,
There are processes such as annealing and epitaxial. In any of the processes, there is a demand to increase the wafer heating rate and the wafer cooling rate in order to increase the throughput. In recent years, in diffusion and annealing, there has been a demand for increasing the temperature raising rate for “forming a shallow junction surface”. This will be described below.

[0008] Due to the high integration and miniaturization of semiconductor (integrated circuit) devices, there is a demand for making the diffusion layer thinner (this is called formation of a shallow junction surface). The light irradiation type heat treatment apparatus is used in an annealing step of diffusing impurities implanted in a silicon crystal very shallowly into a crystal while recovering the silicon crystal damaged by the implantation in a diffusion layer forming step. Can be In the annealing step for forming a shallow bonding surface as described above, the temperature of the wafer is raised to a preset annealing temperature (for example, 1100 ° C.) in a few seconds, and then lowered to room temperature. This annealing process recovers the damage of the silicon crystal,
The impurities are diffused to the desired thickness. If the heating rate is slow,
Since the time of the entire annealing process becomes longer, the impurities spread beyond the desired diffusion film thickness. If the requirement for the thickness of the diffusion layer is, for example, 0.13 to 0.15 μm, 150 to 200 °
A heating rate of C / sec is required. However, with the conventional lamp power control method and the conventional temperature adjustment method, it is difficult to increase the heating rate. This is for the following reason.

(1) Problems in Current / Voltage Feedback Control When the thyristor unit 102 increases the lamp power, a rush current flows through the filament of the lamp 1. However, this inrush current is mainly used to heat the filament (this is called self-heating of the filament)
The radiant energy from the lamp 1 hardly changes.
That is, although the inrush current flows, the lamp does not light up brightly by that amount. Incandescent lamps have the property that radiant energy increases after the filament has been sufficiently heated. However, the thyristor unit 102 shown in FIG. 7 obtains power by feeding back the voltage and current of the incandescent lamp, and controls the input power of the incandescent lamp. Becomes gradual. For this reason, a large inrush current cannot flow, and the filament cannot be quickly heated when the lamp power is increased. That is, the time for sufficiently heating the filament becomes longer, and the time until the radiant energy radiated from the lamp becomes longer. Therefore, the temperature rise of the wafer is delayed.

In particular, when the lamp is turned on from a state where the lamp is turned off, the rise of the temperature rise is delayed due to the above phenomenon.
The delay time depends on the lamp specifications,
When a 3 kW incandescent lamp is used, the delay is about 1 second. However, if the lamp power is increased even during lamp operation, the above-described problem due to the rush current occurs.
For example, the same problem occurs even when the lamp power is increased in order to adjust the slightly lowered wafer temperature to the set temperature while maintaining a constant temperature. FIG. 8 shows how the voltage, current, and power change when performing constant power control. In the figure, the horizontal axis represents time, and the vertical axis represents voltage, current, and power supplied to the lamp 1 from the thyristor unit 102. When the lamp power W is increased at time t0 in FIG. 8, an inrush current tends to flow through the lamp 1 as described above. However, since the thyristor unit 102 performs the constant power control, the voltage is increased by the increased current. The rising of the filament is delayed, so that a sufficient rush current cannot flow, and therefore, the filament cannot be rapidly heated. That is, although the input power to the lamp is constant, the power in the hatched portion of the input power is the power used for self-heating the filament, and the power in this portion is radiated from the lamp. Does not contribute to the energy
The energy emitted from the lamp is less than a predetermined value. When the self-heating of the filament is completed at the time t1, in principle, all the input power contributes to the radiant energy, and the lamp emits a predetermined radiant energy. When the constant power control is performed as described above, a sufficient rush current cannot flow through the lamp 1 and the time required for the filament to self-heat (time from t0 to t1).
And the time until the radiant energy radiated from the lamp increases becomes longer.

(2) Problems related to temperature feedback At a more rapid temperature rise, the temperature detector 103
The control delay of the measurement system including 1 causes a problem. That is, while the temperature of the wafer 2 is measured and the temperature feedback processing is performed, the wafer temperature rises beyond the temperature range in which feedback control is possible. Therefore, the temperature of the wafer 2 cannot be controlled to a desired temperature. The present invention has been made to solve the above problems,
Provided are an incandescent lamp lighting control method and a light irradiation type heating apparatus for a light irradiation type heat treatment apparatus capable of heating a wafer to be processed with a uniform temperature distribution and achieving a higher temperature rising rate. The purpose is to:

[0012]

According to the present invention, the above-mentioned problems are solved as follows. (1) The relationship between the input power and the input voltage of each incandescent lamp is determined in advance, and when a power command value for the incandescent lamp is given, the power command value is converted into the input voltage value of each incandescent lamp based on the above relationship. Then, the energy radiated from each incandescent lamp is controlled by applying the voltage value to each incandescent lamp. (2) The area where the plurality of incandescent lamps are arranged is divided into a plurality of zones, and the distribution of the power command value to the incandescent lamps belonging to each zone is determined in advance for each zone, and the distribution to the incandescent lamps belonging to each zone is determined in advance. The power command value is determined based on the above distribution. According to the first and third aspects of the present invention, the relationship between the input power and the input voltage of each incandescent lamp is determined in advance as in the above (1), and the power command value is determined based on the relationship. Since the voltage value is converted to a voltage value and applied to each incandescent lamp, when the power command value changes, a large rush current can flow through the incandescent lamp, and the filament self-heats in a short time. For this reason,
Radiation energy radiated from the lamp rises faster than in the case where power control is performed as in the related art, and the temperature of the object to be processed can be raised rapidly. Further, since the relationship between the input power and the input voltage of each incandescent lamp is determined in advance, and the power command value is converted into the input voltage value of each incandescent lamp based on the above relationship, the characteristics of the incandescent lamp may vary. Also, the input power of each incandescent lamp can be made to match the power command value. In the invention of claim 2 of the present invention, as in the above (2), the area where the plurality of incandescent lamps are arranged is divided into a plurality of zones, and the distribution of the power command value to the incandescent lamps belonging to each of the zones is determined. Since the power command value for the incandescent lamp belonging to each zone is determined in advance based on the above distribution, the temperature of the workpiece can be raised and lowered with a uniform temperature distribution. Also,
Since the temperature of the object to be processed can be raised and lowered with a uniform temperature distribution without performing temperature feedback, the detection delay of the temperature control system does not cause a problem.

[0013]

FIG. 1 shows an example of the configuration of an incandescent lamp lighting control device according to an embodiment of the present invention. In FIG. 1, reference numeral 11 denotes a higher-level controller, which includes, for example, an operation unit 11a, a storage unit 11b, and an input unit 11c as shown in FIG.
Temperature reached from the input unit 11c to the wafer 2 as a processing object,
Set values such as a heating rate and a time for which the temperature is maintained at the reached temperature are input. When the set value is input, the host controller 11 takes in the temperature of the wafer 2 and calculates the lamp power of each zone according to the lighting control conditions (distribution pattern of the power command value) obtained in advance through experiments and the like as described later. , And outputs a power command signal to the lower controller 12. The temperature of the wafer 2 is determined by the temperature detector 1 such as a thermocouple as in the above-described conventional example.
4 is converted into a temperature signal by the temperature measurement circuit 15 and sent to the host controller 11. Reference numeral 12 denotes a lower-level controller, which includes a calculation unit 12a and a storage unit 12b. The lower controller 12 is provided for each zone, receives a power command signal sent from the upper controller 11, converts the power command signal into a voltage command signal,
A voltage command signal is sent to a constant voltage control unit 13 provided for each lamp.

As will be described later, the characteristics of incandescent lamps vary from lamp to lamp. Even if the same voltage is supplied, the same current does not always flow. That is, even if the same voltage is supplied to each lamp, the same power is not supplied. Also, lamp voltage and power are not proportional. For this reason, the lower controller 12 stores the input power conversion formula for the input voltage of the incandescent lamp belonging to the zone controlled by the lower controller 12 in the storage unit 12b, which is obtained in advance by an experiment or the like as described later. When a power command signal is given from the controller 11, the power command signal is converted into a voltage command signal based on the above conversion formula,
To send to.

The constant voltage control section 13 is provided for each lamp 1, and is supplied with AC power from a commercial AC power supply 16. When a voltage command signal is given from the lower controller 12, the constant voltage control unit 13 controls the voltage supplied to each lamp 1 so as to match the voltage command signal. Controlling the lamp voltage to a predetermined value in this way is referred to as constant voltage control as opposed to the constant power control. Although FIG. 1 shows a case where four lamps are provided in each zone, one or more incandescent lamps can be arranged in each zone.

In the above incandescent lamp lighting control device, the lower controller 12 outputs the power command signal sent from the upper controller based on the relationship between the input voltage and the input power of the incandescent lamp previously obtained through experiments and the like. Is converted into a voltage command signal to be supplied to each lamp. The relationship between the power command signal and the voltage command signal is obtained by actual measurement as follows. In the light irradiation type heat treatment apparatus, the lamp input voltage with respect to the lamp input power is measured for each of the zones including one or a plurality of incandescent lamps. Here, in general, in the case of an incandescent lamp, when the input voltage is plotted against the input power, the curve becomes an upwardly convex curve as shown in FIG. It is known that this curve can be approximated by the following equation. Assuming that the voltage is V and the power is P, the voltage V is approximated by the following equation (1).

[0017]

(Equation 1)

Note that α = log _Pm Vm, and V
m: rated voltage of the lamp, Pm: power (actually measured value) when the rated voltage of the lamp is applied, β (P): correction value approximated by the least square method. For each incandescent lamp in each zone, an equation for converting the power of the above equation (1) into a voltage is obtained from the lamp input voltage with respect to the lamp input power actually measured above. The conversion formula of the incandescent lamp of each zone obtained as described above is stored in the storage unit 12b of the lower controller 12 of each zone.

Further, the host controller 11
According to the lighting control conditions obtained in advance through experiments, etc.
And calculate the lamp power of the
Sends a command signal. The lighting control conditions are, for example,
The wafer 2 at a uniform temperature distribution
Of power distribution to incandescent lamps in each zone
This power distribution pattern is calculated as follows.
Can be Attach temperature detectors to each part of the workpiece
The lamp 1 is turned on to rapidly heat the object to be processed,
The temperature of each part of the physical material is detected. Change power distribution pattern to incandescent lamps in each zone
Repeat the above operation while heating the object
The power distribution to each zone is determined so that it can be increased by.
The above measurements were taken at several possible heating rates,
Temperature at each heating rate and temperature
Find the power distribution pattern. The power distribution to each zone obtained as described above is
The data is stored in the storage unit 11 b of the controller 11. Figure 3 is above
The power distribution to each zone obtained as described above was stored.
It is a figure showing an example of a table. In FIG.
0 is the zone number, in this example there are 10 zones
Shows the case. Further, T1 to T7 are time, and P
₁₁~ P _A6Indicates power distribution to each zone.

The storage unit 11b of the host controller 11 has
For example, a table shown in FIG. 3 corresponding to each heating rate is stored.
The upper controller 11 quickly adds wafers.
When heating, refer to the above table and apply power to each zone.
Calculate the force command signal. For example, the upper controller 11
At time T1 at the start of lamp lighting, as shown in FIG.
P for each zone 1-10₁₁~ P_A1Power distribution
A power command signal as shown in FIG. Then at time T2
Is P for each zone 1-10₁₂~ P _A2Power distribution
A power command signal is generated such that Similarly, above
Power distribution at each time is sequentially read from the table
Then, a power command signal is generated and transmitted to the lower-order controller 12.
Put out. The lower controller 12 transmits the power command signal
Upon receipt, this power signal is converted to the
And converts it to a voltage command signal and sends it to the constant voltage control unit 13.
I do.

Hereinafter, the wafer temperature control in this embodiment will be described with reference to FIG. The storage unit 11b of the host controller 11 stores power distribution to each zone as shown in FIG. 3 for raising the temperature of the wafer with a uniform temperature distribution at a certain heating rate obtained in advance by experiment. A table is stored. The storage unit 12b of the lower controller 12 stores the above-described conversion formula for converting the incandescent lamp input power of each zone into the lamp input voltage. From the input unit 11c of the host controller 11, a set temperature such as a temperature reached by the wafer (for example, 1000 ° C.), a temperature rising rate (for example, 150 ° C./sec), and a time for maintaining the temperature at the reached temperature are input. These setting signals input to the input unit 11c are captured and stored in the host controller 11.

On the other hand, the current temperature (for example, room temperature 25 ° C.) of the corresponding zone of the wafer 2 is detected by the temperature detector 14,
1 is input. Based on the measured current wafer temperature and the set heating rate / attained temperature, etc., the host controller 11 uniformly distributes the wafer 2 with the above set values from the power distribution patterns stored in the storage unit 11b. A power distribution pattern to be raised with a suitable temperature distribution is selected, a power control value to be transmitted to the lower controller 12 provided for each zone is determined based on the selected power distribution pattern, and transmitted to the lower controller 12. The lower-order controller 12 converts the power control value into a voltage control value based on the above-described conversion formula, and outputs the voltage control value to the constant voltage control unit 13 as a set voltage signal.

The constant voltage controller 13 outputs a predetermined voltage to the lamp according to the voltage setting signal. Since the voltage supplied to the lamp is a voltage of a predetermined magnitude as described above, a large rush current flows through the filament of the lamp 1. As a result, a large electric power is generated in the filament of the lamp 1, and the filament can be quickly heated. That is, the self-heating is performed in a short time without the voltage input drop due to the current value feedback unlike the conventional device. Therefore, after this short self-heating, the radiant energy is supplied from the lamp 1 to the object to be heated, and the temperature of the object to be heated rapidly rises. Hereinafter, upper controller 1
1 sequentially reads out the power distribution pattern stored in the storage unit 11b at each time to generate a power command signal, and sends it to the lower controller 12. The lower-order controller 12 converts the power command signal into a voltage command signal and sends it to the constant voltage control unit 13, so that the lighting of the lamp 1 in each zone is controlled.

At the time of the temperature rise, the temperature of the wafer 2 is not fed back. That is, the upper controller 11 only generates a power command signal to the lower controller 12 based on the power distribution pattern stored in the storage unit 11b, but does not perform control based on the temperature detected by the temperature detector 14. Therefore, in this embodiment, the problem of control delay of the measurement system is eliminated. After the elapse of the set heating time, the temperature of the wafer 2 may be measured to check whether the temperature has actually reached the set temperature. For example, when the wafer temperature is not within the set allowable temperature range, a method may be adopted in which a trouble is generated in the apparatus and the processing is stopped. When cooling the wafer 2, the lamp lighting control for heating the peripheral portion of the wafer 2 is the same as that for heating, and as described above, the power command signal is generated based on the power distribution pattern stored in the host controller 12. Then, the power command signal is converted into a voltage command signal to control each lamp at a constant voltage.

FIG. 4 shows how the voltage, current, and power change when constant voltage control is performed. In the figure, the horizontal axis represents time, and the vertical axis represents voltage, current, and power supplied from the constant voltage control unit 13 to the lamp 1. In this embodiment,
Since the incandescent lamp is controlled at a constant voltage, as shown in the figure, when the lamp is changed to the input voltage V, a large inrush current flows during a period from t0 to t1, but the voltage value does not change. Therefore, the input power W of the lamp during this period increases, and the filament is rapidly heated. Of the input power, the power in the hatched portion in the figure is the power used for self-heating of the filament, and its area is the same as the area in the hatched portion in FIG. That is, since a large amount of electric power is applied to the filament, the time required for self-heating of the filament (time from t0 to t1) is reduced, and the energy W radiated from the lamp becomes a substantially constant value. Therefore, the temperature of the object to be processed can be raised more rapidly than in the conventional example. FIG. 5 shows the temperature rising rate of the wafer in the present embodiment and the conventional example. In the figure, the horizontal axis represents time, and the vertical axis represents wafer temperature. As is clear from the figure, the use of the lamp lighting control device of the present embodiment makes it possible to raise the temperature of the wafer in a shorter time than in the conventional example.

FIG. 6 shows a modification of the above embodiment. This embodiment shows an embodiment in which a voltage fluctuation of a commercial power supply for lighting a lamp is corrected. Although the configuration of this embodiment is almost the same as that shown in FIG. 1, in this embodiment, a voltage detector 17 for detecting a power supply voltage is provided, and the fluctuation of the power supply voltage is detected by the voltage detector 17. Detected and input to lower controller 12. A commercial power supply (for example, 200 V) for lighting a lamp generally fluctuates by about ± 10%. Therefore, the voltage supplied to the lamp also fluctuates accordingly, and a desired voltage may not be supplied to the lamp in some cases. In order to prevent this, in the present embodiment, the commercial power supply 1 that supplies power to the constant voltage control unit 13 as described above is used.
6 is provided, and the detected voltage value is fed back to the calculation unit 12a of the lower controller 12. The arithmetic unit 12a divides a specified voltage value (for example, 200 V) of the commercial power supply by the detected voltage side, and multiplies the result as a coefficient by a voltage set value output to the voltage control unit and outputs the result. In general, the voltage fluctuation of the commercial power supply for lighting the lamp is sufficiently small and slow with respect to the time interval detected by the voltage detector 17, both in the width and the speed of the fluctuation. Therefore, as described above, the lamp lighting commercial power supply 1
Even if the voltage detector 17 detects the voltage of No. 6 and performs the feedback control, it does not slow down the heating rate.

[0027]

As described above, in the present invention,
The following effects can be obtained. (1) Since an equation for converting the lamp power value into a voltage value is obtained in advance and the lamp lighting control is performed by controlling the input voltage of the lamp, self-heating of the lamp is performed as in lamp power control. The filament of the lamp can be heated in a short time without increasing the time. For this reason, the radiant energy of the lamp rises quickly, and the temperature of the object to be processed can be increased more quickly. (2) The lamp lighting control conditions of each zone that can raise and lower the temperature of the object with a uniform temperature distribution are measured in advance, and the lamps are controlled to be turned on based on the measured values, and the object is processed. Since the temperature is raised or lowered, the temperature distribution of the processing object is made uniform even when a rapid temperature change occurs where temperature feedback of the processing object cannot be performed due to control delay of the temperature measurement system. Can be controlled. (3) By detecting the voltage of the commercial power supply for lighting the lamp and correcting the variation by feedback to control the lamp voltage, a desired voltage is supplied to the lamp without being affected by the variation of the commercial power supply voltage. Then, the object to be processed can be heated.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating a configuration example of an incandescent lamp lighting control device according to an embodiment of the present invention.

FIG. 2 is a diagram showing a relationship between input power and input voltage in an incandescent lamp.

FIG. 3 is a diagram showing an example of a table storing power distribution to each zone.

FIG. 4 is a diagram showing how the voltage, current, and power of the lamp change when constant voltage control is performed.

FIG. 5 is a diagram showing a temperature rise rate of a wafer in the present embodiment and a conventional example.

FIG. 6 is a diagram showing a modification of the embodiment shown in FIG. 1;

FIG. 7 is a diagram showing a configuration example of a conventional incandescent lamp lighting control device.

FIG. 8 is a diagram showing how voltage, current, and power change when performing constant power control.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Lamp 2 Wafer (object to be processed) 11 Upper controller 12 Lower controller 13 Constant voltage control unit 14 Temperature detector 15 Temperature measurement circuit 16 Commercial AC power supply 17 Voltage detector

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H05B 3/00 370 H01L 21/26 TF term (Reference) 3K058 AA02 AA86 BA19 CA03 CA05 CA12 CA23 CA46 CB02 CB09 CB26 CB34 CC03 CE02 CE12 CE17 CE24 5F045 BB01 EK11 GB05 GB15

Claims (3)

[Claims] 1. An incandescent lamp lighting control method for a light irradiation type heat treatment apparatus for heating an object by irradiating the object with light including infrared rays emitted from a plurality of incandescent lamps. The relationship between the input power of the lamp and the input voltage is determined in advance, and when a power command value for the incandescent lamp is given, the power command value is converted into the input voltage value of each incandescent lamp based on the above relationship, and the voltage value is An incandescent lamp lighting control method in a light irradiation type heating device, wherein energy applied from each incandescent lamp is controlled by applying to each incandescent lamp. 2. An area in which a plurality of incandescent lamps are arranged is divided into a plurality of zones, and a distribution of a power command value to the incandescent lamps belonging to each zone is determined in advance for each zone. The incandescent lamp lighting control method in the light irradiation type heating device according to claim 1, wherein a power command value for the lamp is determined based on the distribution. 3. A light irradiation device comprising: a plurality of incandescent lamps; and control means for controlling lighting of each of the incandescent lamps, and irradiating the object with infrared light emitted from the incandescent lamp to heat the object. Wherein the control means obtains a voltage value to be applied to each incandescent lamp from a previously determined relationship between input power and input voltage of each incandescent lamp when a power command value for the incandescent lamp is given. A light irradiation type heat treatment apparatus characterized in that the voltage value is applied to each incandescent lamp to control lighting of each incandescent lamp.