JP6473599B2 - Ceramic metal bonded body and circuit board using the same - Google Patents

Ceramic metal bonded body and circuit board using the same Download PDF

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JP6473599B2
JP6473599B2 JP2014221106A JP2014221106A JP6473599B2 JP 6473599 B2 JP6473599 B2 JP 6473599B2 JP 2014221106 A JP2014221106 A JP 2014221106A JP 2014221106 A JP2014221106 A JP 2014221106A JP 6473599 B2 JP6473599 B2 JP 6473599B2
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章雄 湯口
章雄 湯口
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Kyocera Corp
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本発明は、セラミックス金属接合体およびこれを用いた回路基板に関するものである。   The present invention relates to a ceramic metal bonded body and a circuit board using the same.

近年、絶縁ゲート・バイポーラ・トランジスタ(IGBT)素子,金属酸化膜型電界効果トランジスタ(MOSFET)素子,発光ダイオード(LED)素子,フリーホイーリングダイオード(FWD)素子,ジャイアント・トランジスタ(GTR)素子等の半導体素子,昇華型サーマルプリンタヘッド素子,サーマルインクジェットプリンタヘッド素子およびペルチェ素子等の各種電子部品が回路基板の回路部材上に搭載された電子装置が用いられている。   In recent years, insulated gate bipolar transistor (IGBT) devices, metal oxide field effect transistor (MOSFET) devices, light emitting diode (LED) devices, freewheeling diode (FWD) devices, giant transistor (GTR) devices, etc. 2. Description of the Related Art An electronic device in which various electronic components such as a semiconductor element, a sublimation thermal printer head element, a thermal ink jet printer head element, and a Peltier element are mounted on a circuit member of a circuit board is used.

電子部品を搭載する回路部材を設けてなる回路基板としては、絶縁性のセラミックス基板の両側の主面に、例えば、複数の金属層が積層された積層材が用いられている。   As a circuit board provided with a circuit member for mounting an electronic component, for example, a laminated material in which a plurality of metal layers are laminated on both main surfaces of an insulating ceramic substrate is used.

そして、このような積層材を用いた回路基板の例として、例えば、特許文献1では、AlN、Al、Si、SiC、Y、CaO、BNおよびBeOよりなる群から選ばれた1種のセラミックからなる基板(以下、セラミックからなる基板をセラミックス基板という)と、基板の一面に形成され、かつAl粉末、Cu粉末、Ag粉末、Au粉末、Al合金粉末、Cu合金粉末、Ag合金粉末およびAu合金粉末よりなる群から選ばれた1種の金属粉末からなる第1焼結体層と、基板の他面に形成され、かつCu粉末とMo粉末との混合粉末、Cu粉末とW粉末との混合粉末、Al粉末とSiC粉末との混合粉末、Al粉末とAlN粉末との混合粉末、Si粉末とSiC粉末との混合粉末、Alと短炭素繊維との混合粉末およびAlと炭素粒子との混合粉末よりなる群から選ばれた1種の混合粉末からなる第2焼結体層とを備えており、第1および第2焼結体層が、上記粉末と、樹脂および可塑剤を混ぜて成形したグリーンシートを使用するとともに、当該グリーンシート中の粉末を放電プラズマ焼結法により焼結することによって形成された絶縁積層材が提案されている。 And as an example of the circuit board using such a laminated material, for example, in Patent Document 1, a group consisting of AlN, Al 2 O 3 , Si 3 N 4 , SiC, Y 2 O 3 , CaO, BN and BeO. A substrate made of one kind of ceramic selected from the following (hereinafter referred to as a ceramic substrate), Al powder, Cu powder, Ag powder, Au powder, Al alloy powder, Cu A first sintered body layer made of one kind of metal powder selected from the group consisting of alloy powder, Ag alloy powder and Au alloy powder, and a mixed powder of Cu powder and Mo powder formed on the other surface of the substrate , Mixed powder of Cu powder and W powder, mixed powder of Al powder and SiC powder, mixed powder of Al powder and AlN powder, mixed powder of Si powder and SiC powder, mixed of Al and short carbon fiber And a second sintered body layer made of one kind of mixed powder selected from the group consisting of a mixed powder of Al and carbon particles, the first and second sintered body layers comprising the above powder and Insulating laminates formed by using a green sheet formed by mixing a resin and a plasticizer and sintering the powder in the green sheet by a discharge plasma sintering method have been proposed.

特開2011−71260号公報JP 2011-71260 A

しかしながら、特許文献1で提案された絶縁積層材は、第1焼結体層および第2焼結体層の各外周面が断面視で基板に垂直に、かつセラミックス基板の外周面と面一に構成されているため、第1焼結体層や第2焼結体層の膨張や収縮にともなう応力が、セラミックス基板の外周面に直接的に作用し易い。このため、セラミックス基板に長期間に亘って熱が繰り返しかかると、セラミックス基板に、外周面を起点とするクラックが生じやすいという問題があった。   However, in the insulating laminated material proposed in Patent Document 1, the outer peripheral surfaces of the first sintered body layer and the second sintered body layer are perpendicular to the substrate in a sectional view and flush with the outer peripheral surface of the ceramic substrate. Since it is comprised, the stress accompanying expansion | swelling or shrinkage | contraction of a 1st sintered compact layer or a 2nd sintered compact layer tends to act on the outer peripheral surface of a ceramic substrate directly. For this reason, if heat is repeatedly applied to the ceramic substrate over a long period of time, there is a problem that the ceramic substrate is likely to be cracked starting from the outer peripheral surface.

本発明は、上記問題点に鑑みて案出されたものであり、熱が繰り返しかかってもクラックが生じにくいセラミックス金属接合体および回路基板を提供することを目的とするものである。   The present invention has been devised in view of the above-described problems, and an object of the present invention is to provide a ceramic metal joined body and a circuit board that are unlikely to crack even when heat is repeatedly applied.

本発明の一態様によるセラミックス金属接合体は、円板状のセラミックス基板と、該セラミックス基板の一方主面側に第1金属層を介して接合された第1金属部材と、前記セラミックス基板の他方主面側に第2金属層を介して接合された第2金属部材とを有するセラミックス金属接合体であって、前記第1金属部材は、前記セラミックス基板の前記一方主面と対向する円状の第1主面と、前記第1主面と反対の側の円状の第2主面とを有し、前記第2主面に比べて前記第1主面の面積が小さく、前記第1金属部材は銅を主成分とし、前記第1金属層はろう材であり、前記第1金属層と前記第1金属部材との間に銅箔を含む第1結合層を配置してなることを特徴とする。また、円板状のセラミックス基板と、該セラミックス基板の一方主面側に第1金属層を介して接合された第1金属部材と、前記セラミックス基板の他方主面側に第2金属層を介して接合された第2金属部材とを有するセラミックス金属接合体であって、前記第1金属部材は、前記セラミックス基板の前記一方主面と対向する円状の第1主面と、前記第1主面と反対の側の円状の第2主面とを有し、前記第2主面に比べて前記第1主面の面積が小さく、前記第2金属部材は銅を主成分とし、前記第2金属層はろう材であり、前記第2金属層と前記第2金属部材との間に銅箔を含む第2結合層を配置してなることを特徴とする。 A ceramic metal bonded body according to an aspect of the present invention includes a disk-shaped ceramic substrate, a first metal member bonded to one main surface side of the ceramic substrate via a first metal layer, and the other of the ceramic substrates. A ceramic metal joined body having a second metal member joined to a main surface side via a second metal layer, wherein the first metal member is a circular shape facing the one main surface of the ceramic substrate. A first main surface and a circular second main surface opposite to the first main surface, wherein the first main surface has a smaller area than the second main surface; member is composed mainly of copper, the first metal layer is a brazing material, characterized by being arranged a first coupling layer comprising copper foil between the first metal member and the first metal layer And A disk-shaped ceramic substrate; a first metal member bonded to one main surface of the ceramic substrate via a first metal layer; and a second metal layer interposed to the other main surface of the ceramic substrate. A first metal member having a circular first main surface facing the one main surface of the ceramic substrate, and the first main member. and a surface opposite to circular second main surface side of said second small area of said first major surface than the main surface, the second metal member is a main component of copper, the first 2 the metal layer is a brazing material, characterized by comprising placing a second coupling layer comprising copper foil between the second metal member and the second metal layer.

また、本発明の一態様による回路基板は、上記構成の本発明の一体様によるセラミックス金属接合体を用いたことを特徴とするものである。   A circuit board according to an aspect of the present invention is characterized in that the ceramic metal joined body according to the present invention having the above-described configuration is used.

本発明の一態様によるセラミックス金属接合体および回路基板は、セラミックス基板に生じるクラック等の損傷を抑制することができる。   The ceramic metal bonded body and the circuit board according to one embodiment of the present invention can suppress damage such as cracks generated in the ceramic substrate.

本実施形態のセラミックス金属接合体の一例を示す、(a)は平面図、(b)は(a)のA−A’における断面図、(c)は底面図である。An example of the ceramic metal joined body of this embodiment is shown, (a) is a plan view, (b) is a cross-sectional view taken along line A-A 'in (a), and (c) is a bottom view. 本実施形態のセラミックス金属接合体の他の例を示す、(a)は平面図、(b)は(a)のC−C’における断面図、(c)は底面図である。The other example of the ceramic metal joined body of this embodiment is shown, (a) is a top view, (b) is sectional drawing in C-C 'of (a), (c) is a bottom view. 本実施形態のセラミックス金属接合体の他の例を示す、(a)は平面図、(b)は(a)のD−D’における断面図、(c)は底面図である。The other example of the ceramic metal joined body of this embodiment is shown, (a) is a top view, (b) is sectional drawing in D-D 'of (a), (c) is a bottom view. 本実施形態のセラミックス金属接合体の他の例を示す、(a)は平面図、(b)は(a)のE−E’における断面図、(c)は底面図である。The other example of the ceramic metal joined body of this embodiment is shown, (a) is a top view, (b) is sectional drawing in E-E 'of (a), (c) is a bottom view. 本実施形態のセラミックス金属接合体の他の例を示す、(a)は平面図、(b)は(a)のF−F’における断面図、(c)は底面図である。The other example of the ceramic metal joined body of this embodiment is shown, (a) is a top view, (b) is sectional drawing in F-F 'of (a), (c) is a bottom view. 本実施形態のセラミックス金属接合体の他の例を示す、(a)は平面図、(b)は(a)のG−G’における断面図、(c)は底面図である。The other example of the ceramic metal joined body of this embodiment is shown, (a) is a top view, (b) is sectional drawing in G-G 'of (a), (c) is a bottom view. 本実施形態のセラミックス金属接合体の他の例を示す、(a)は平面図、(b)は(a)のH−H’における断面図、(c)は底面図である。The other example of the ceramic metal joined body of this embodiment is shown, (a) is a top view, (b) is sectional drawing in H-H 'of (a), (c) is a bottom view.

以下、図面を参照して、本発明の実施形態について詳細に説明する。ただし、本明細書の全図において、混同を生じない限り、同一部分には同一符号を付し、その説明を適時省略する。   Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. However, in all the drawings in this specification, the same parts are denoted by the same reference symbols unless the confusion occurs, and the description thereof is omitted as appropriate.

図1は、本実施形態のセラミックス金属接合体の一例を示す、(a)は平面図、(b)は(a)のA−A’における断面図、(c)は底面図である。   1A and 1B show an example of a ceramic-metal bonded body according to the present embodiment, in which FIG. 1A is a plan view, FIG. 1B is a cross-sectional view taken along line A-A ′ in FIG.

図1に示すセラミックス金属接合体10aは、円板状のセラミックス基板1と、セラミックス基板1の一方主面1A側に第1金属層2を介して接合された第1金属部材3と、セラミックス基板1の他方主面1B側に第2金属層4を介して接合された第2金属部材5とを有する。第1金属部材3は、セラミックス基板1の一方主面1Aと対向する円状の第1主面P1と、第1主面P1と反対の側の円状の第2主面P2とを有し、第2主面P2に比べて第1主面P1の面積が小さい。   A ceramic metal bonded body 10a shown in FIG. 1 includes a disk-shaped ceramic substrate 1, a first metal member 3 bonded to one main surface 1A side of the ceramic substrate 1 via a first metal layer 2, and a ceramic substrate. And a second metal member 5 bonded to the other main surface 1B side of the first metal via a second metal layer 4. The first metal member 3 has a circular first main surface P1 facing the one main surface 1A of the ceramic substrate 1 and a circular second main surface P2 opposite to the first main surface P1. The area of the first main surface P1 is smaller than that of the second main surface P2.

図1では、第1金属部材3および第2金属部材5がいずれも円板状である例を示したが、第1金属部材3および第2金属部材5の少なくともいずれかが円柱状であってもよい。   FIG. 1 shows an example in which both the first metal member 3 and the second metal member 5 are disk-shaped, but at least one of the first metal member 3 and the second metal member 5 is cylindrical. Also good.

上述したセラミックス金属接合体10aでは、第1金属部材3の第1主面P1と第2主面P2とが円状であるので、これら第1主面P1と第2主面P2はある程度の大きさの面積をもちながら、周縁線の長さは比較的短い。第1金属部材3が熱膨張や熱収縮する際、
これら第1主面P1の周縁線部分や第2主面P2の周縁線部分が、第1金属層2を引き剥がしたり圧縮したりする力の起点部分となる。特に周縁線部分に角状部がある場合など、この角状部に、熱膨張や熱収縮にともなう応力が集中するようにかかり易く、セラミックス基板1が損傷し易い。本実施形態のセラミックス金属接合体10aでは、第1金属部材3の第1主面P1と第2主面P2とが円状であるので、これら応力が集中し易い部分がなく、第1金属層2を引き剥がしたり圧縮したりする力が第1金属層2やセラミックス基板1にかかり難い。また、第1金属部材3の第2主面P2に比べて第1主面P1の面積を小さくすることで、第1主面P1近傍部における熱膨張や熱収縮の程度を、第2主面P2における熱膨張や熱収縮の程度に比べて小さくしており、セラミックス基板1を拘束する側の第1主面P1からセラミックス基板1にかかる熱応力自体が比較的小さくされている。セラミックス金属接合体10aでは、セラミックス基板1にかかるクラック等の損傷が抑制されている。また第1金属部材3の第2主面P2は、セラミックス基板1の熱を放熱する放熱面としても機能する。セラミックス金属接合体10aでは、第2主面P2の側の面積を比較的大きく保つことで、第1金属部材3の熱膨張の程度や熱収縮の程度自体を抑制しており、セラミックス基板1の損傷がより確実に抑制されている。
In the ceramic-metal bonded body 10a described above, the first main surface P1 and the second main surface P2 of the first metal member 3 are circular, so that the first main surface P1 and the second main surface P2 are somewhat large. While having a large area, the length of the peripheral line is relatively short. When the first metal member 3 is thermally expanded or contracted,
The peripheral line portion of the first main surface P1 and the peripheral line portion of the second main surface P2 serve as a starting point portion of a force for peeling or compressing the first metal layer 2. In particular, when there is a horn portion in the peripheral line portion, stress is easily applied to the horn portion so as to concentrate thermal expansion and contraction, and the ceramic substrate 1 is easily damaged. In the ceramic-metal bonded body 10a of the present embodiment, since the first main surface P1 and the second main surface P2 of the first metal member 3 are circular, there is no portion where these stresses tend to concentrate, and the first metal layer The force for peeling or compressing 2 is difficult to be applied to the first metal layer 2 and the ceramic substrate 1. Further, by reducing the area of the first main surface P1 as compared with the second main surface P2 of the first metal member 3, the degree of thermal expansion and contraction in the vicinity of the first main surface P1 can be reduced. It is smaller than the degree of thermal expansion and contraction in P2, and the thermal stress itself applied to the ceramic substrate 1 from the first main surface P1 on the side that restrains the ceramic substrate 1 is relatively small. In the ceramic metal bonded body 10a, damage such as cracks applied to the ceramic substrate 1 is suppressed. The second main surface P2 of the first metal member 3 also functions as a heat radiating surface that radiates the heat of the ceramic substrate 1. In the ceramic metal bonded body 10a, the extent of the thermal expansion and the thermal contraction of the first metal member 3 itself is suppressed by keeping the area on the second main surface P2 side relatively large. Damage is more reliably suppressed.

また図2は、本実施形態のセラミックス金属接合体の他の例を示す、(a)は平面図、(b)は(a)のC−C’における断面図、(c)は底面図である。図2でも、図1と同様の構成について、図1と同じ符号を用いている。図2に示す例のセラミックス金属接合体10cも、第1金属部材3はセラミックス基板1の一方主面1Aと対向する円状の第3主面P3と、第3主面P3と反対の側の円状の第4主面P4とを有し、第4主面P4に比べて第3主面P3の面積が小さい。図2に示す例のセラミックス金属接合体10cは、第1金属部材3にスリット部3Aが設けられており、第1金属部材3がスリット3Aを介して複数部分に分割されている点で、図1に示すセラミックス金属接合体10aと異なっている。第1金属部材3を、それぞれ電気的に独立した複数の部分に分割して用いたい場合など、このように第1金属部材3が複数の部分に分割されていてもよい。この場合も、金属部材3の各部分は、第1主面P1の周縁線部分や第2主面P2の周縁線部分は円弧状部分を有し、周縁線が複数の角部を有する形状である場合に比べて、周縁線が比較的短く、かつ応力等が集中し易い部分が比較的少ない。また、図示しないが、第2金属部材5も複数の部分に分割されていてもよい。なお、図2に示す例のセラミックス金属接合体10cは、第1金属部材3が2分割されている例であるが、第1金属部材3および第2金属部材5の少なくともいずれかが3分割以上されていてもよい。   2A and 2B show another example of the ceramic-metal bonded body of the present embodiment. FIG. 2A is a plan view, FIG. 2B is a sectional view taken along the line CC ′ of FIG. is there. 2, the same reference numerals as those in FIG. 1 are used for the same configurations as those in FIG. Also in the ceramic metal joined body 10c of the example shown in FIG. 2, the first metal member 3 has a circular third main surface P3 facing the one main surface 1A of the ceramic substrate 1 and a side opposite to the third main surface P3. It has a circular fourth main surface P4, and the area of the third main surface P3 is smaller than that of the fourth main surface P4. The ceramic metal joined body 10c of the example shown in FIG. 2 has a slit portion 3A provided in the first metal member 3, and the first metal member 3 is divided into a plurality of portions via the slit 3A. 1 is different from the ceramic-metal bonded body 10a shown in FIG. The first metal member 3 may be divided into a plurality of parts in this way, for example, when the first metal member 3 is desired to be divided into a plurality of electrically independent parts. Also in this case, each part of the metal member 3 has a shape in which the peripheral line part of the first main surface P1 and the peripheral line part of the second main surface P2 have arc-shaped parts, and the peripheral line has a plurality of corners. Compared to a certain case, the peripheral line is relatively short, and there are relatively few portions where stress or the like is likely to concentrate. Although not shown, the second metal member 5 may also be divided into a plurality of portions. 2 is an example in which the first metal member 3 is divided into two parts, but at least one of the first metal member 3 and the second metal member 5 is divided into three or more parts. May be.

図3は、本実施形態のセラミックス金属接合体の他の例を示す、(a)は平面図、(b)は(a)のD−D’における断面図、(c)は底面図である。図3に示す例のセラミックス金属接合体10dでは、第1金属部材3は、第1主面P1の近傍部分の外周面に第1の段差12を備えている。具体的には、第1金属部材3は、第1主面P1の近傍部分の外周面の一部分を、周方向に連続して切り欠いたような形状の段差12を有する。段差12を設けることで、第1金属部材3の外周面のセラミックス基板1の近傍における面積を比較的大きくすることができる。第1金属部材3の外周面の面積とは、段差12に対応する部分の図3(b)中下側方向を向く部分も含む全ての面積のことをいう。また第1主面P1の近傍部分とは、第1主面P1と第2主面P2との間を、第1主面P1および第2主面P2に平行な平面に沿って2分割した場合の、第1主面P1を含む側の部分のことをいう。図3の実施形態では、段差部12によって、第1金属部材3の、セラミックス基板1の近傍の放熱特性が比較的高いので、第1主面P1近傍部における熱膨張や熱収縮の程度を、第2主面P2における熱膨張や熱収縮の程度に比べてさらに小さくすることができる。   3A and 3B show another example of the ceramic-metal bonded body of the present embodiment, in which FIG. 3A is a plan view, FIG. 3B is a cross-sectional view taken along line DD ′ in FIG. . In the ceramic metal joined body 10d shown in FIG. 3, the first metal member 3 includes a first step 12 on the outer peripheral surface in the vicinity of the first main surface P1. Specifically, the first metal member 3 has a step 12 having a shape in which a part of the outer peripheral surface in the vicinity of the first main surface P1 is continuously cut out in the circumferential direction. By providing the step 12, the area of the outer peripheral surface of the first metal member 3 in the vicinity of the ceramic substrate 1 can be made relatively large. The area of the outer peripheral surface of the 1st metal member 3 means all the areas including the part corresponding to the level | step difference 12 including the part which faces the lower direction in FIG.3 (b). The vicinity of the first main surface P1 is a case where the space between the first main surface P1 and the second main surface P2 is divided into two along a plane parallel to the first main surface P1 and the second main surface P2. The part of the side including the first main surface P1. In the embodiment of FIG. 3, since the heat dissipation characteristics of the first metal member 3 in the vicinity of the ceramic substrate 1 are relatively high due to the stepped portion 12, the degree of thermal expansion and contraction in the vicinity of the first main surface P1 is The degree of thermal expansion and thermal contraction on the second main surface P2 can be further reduced.

また図4は、本実施形態のセラミックス金属接合体の他の例を示す、(a)は平面図、(b)は(a)のE−E’における断面図、(c)は底面図である。図4に示す例のセラミックス金属接合体10eは、図1に示す例のセラミックス金属接合体10aを基本構成
とするセラミックス金属接合体であって、第2金属部材5は、セラミックス基板1の他方主面1Bと対向する円状の第3主面P3と、第3主面P3と反対の側の円状の第4主面P4とを有し、第4主面P4に比べて第3主面P3の面積が小さい。
FIG. 4 shows another example of the ceramic-metal bonded body of the present embodiment, (a) is a plan view, (b) is a sectional view taken along line EE ′ of (a), and (c) is a bottom view. is there. The ceramic metal joined body 10e shown in FIG. 4 is a ceramic metal joined body having the basic structure of the ceramic metal joined body 10a shown in FIG. 1, and the second metal member 5 is the other main body of the ceramic substrate 1. The third main surface has a circular third main surface P3 facing the surface 1B and a circular fourth main surface P4 opposite to the third main surface P3, as compared to the fourth main surface P4. The area of P3 is small.

このような構成であると、第1金属部材3のみならず第2金属部材5においても、第2金属部材5の第3主面P3近傍の熱膨張や熱収縮の程度を、第4主面P4における熱膨張や熱収縮の程度に比べて小さくすることができ、セラミックス基板1の損傷をさらに確実に抑制することができる。   With such a configuration, not only in the first metal member 3 but also in the second metal member 5, the degree of thermal expansion and contraction in the vicinity of the third main surface P3 of the second metal member 5 is set to the fourth main surface. Compared with the degree of thermal expansion and thermal contraction in P4, the ceramic substrate 1 can be more reliably suppressed from being damaged.

また図5は、本実施形態のセラミックス金属接合体の他の例を示す、(a)は平面図、(b)は(a)のF−F’における断面図、(c)は底面図である。図5に示す例のセラミックス金属接合体10fでは、第2金属部材5は、第3主面P3の近傍部分の外周面に第2の段差13を備えている。具体的には、第2金属部材5は、第3主面P3の近傍部分の外周面の一部分を、周方向に連続して切り欠いたような形状の段差13を有する。段差13を設けることで、第2金属部材5の外周面のセラミックス基板1の近傍における面積を比較的大きくすることができる。第2金属部材5の外周面の面積とは、段差13に対応する部分の図5(b)中下側方向を向く部分も含む全ての面積のことをいう。また第3主面P3の近傍部分とは、第3主面P3と第4主面P4との間を、第3主面P3および第4主面P4に平行な平面に沿って2分割した場合の、第3主面P3を含む側の部分のことをいう。図5の実施形態では、段差部13によって、第2金属部材5の、セラミックス基板1の近傍の放熱特性が比較的高いので、第3主面P3近傍部における熱膨張や熱収縮の程度を、第4主面P4における熱膨張や熱収縮の程度に比べてさらに小さくすることができる。   FIG. 5 shows another example of the ceramic-metal bonded body of the present embodiment, (a) is a plan view, (b) is a sectional view taken along line FF ′ in (a), and (c) is a bottom view. is there. In the ceramic metal joined body 10f of the example shown in FIG. 5, the second metal member 5 includes a second step 13 on the outer peripheral surface in the vicinity of the third main surface P3. Specifically, the second metal member 5 has a step 13 having a shape such that a part of the outer peripheral surface in the vicinity of the third main surface P3 is continuously cut out in the circumferential direction. By providing the step 13, the area of the outer peripheral surface of the second metal member 5 in the vicinity of the ceramic substrate 1 can be made relatively large. The area of the outer peripheral surface of the second metal member 5 refers to the entire area including the part corresponding to the step 13 and the part facing the lower side in FIG. The vicinity of the third main surface P3 is a case where the space between the third main surface P3 and the fourth main surface P4 is divided into two along a plane parallel to the third main surface P3 and the fourth main surface P4. This refers to the portion including the third main surface P3. In the embodiment of FIG. 5, since the heat dissipation characteristics of the second metal member 5 in the vicinity of the ceramic substrate 1 are relatively high due to the stepped portion 13, the degree of thermal expansion and contraction in the vicinity of the third main surface P <b> 3 is The degree of thermal expansion and contraction on the fourth main surface P4 can be further reduced.

また、図6は、本実施形態のセラミックス金属接合体の他の例を示す、(a)は平面図、(b)は(a)のG−G’における断面図、(c)は底面図である。図6に示す例のセラミックス金属接合体10gは、図5に示す例のセラミックス金属接合体10fを基本構成として、第1金属部材3が銅を主成分とし、第1金属層2と第1金属部材3との間に銅を主成分とする第1結合層6を配置している。このような構成とすると、第1金属層2と第1金属部材3とを低い温度(例えば、325℃)で接合することができることから、第1金属部材3が反りにくくなるので、その厚みを増やすことができ、高い放熱特性を得ることができる。   FIG. 6 shows another example of the ceramic-metal bonded body of the present embodiment, (a) is a plan view, (b) is a cross-sectional view at GG ′ in (a), and (c) is a bottom view. It is. The ceramic metal joined body 10g of the example shown in FIG. 6 has the ceramic metal joined body 10f of the example shown in FIG. 5 as a basic configuration, the first metal member 3 is mainly composed of copper, and the first metal layer 2 and the first metal Between the member 3, the 1st coupling layer 6 which has copper as a main component is arrange | positioned. With such a configuration, the first metal layer 2 and the first metal member 3 can be bonded at a low temperature (for example, 325 ° C.). It can be increased and high heat dissipation characteristics can be obtained.

また図7は、本実施形態のセラミックス金属接合体の他の例を示す、(a)は平面図、(b)は(a)のH−H’における断面図、(c)は底面図である。図7に示す例のセラミックス金属接合体10nは、図6に示す例のセラミックス金属接合体10gを基本構成として、第2金属部材5が銅を主成分とし、第2金属層2と第2金属部材5との間に銅を主成分とする第2結合層7を配置してなる。このような構成とすると、第2金属層4と第2金属部材5とを低い温度(例えば、325℃)で接合することができることから、第2金属部材5が反りにくくなるので、その厚みを増やすことができ、より高い放熱特性を得ることができる。   FIG. 7 shows another example of the ceramic-metal bonded body of the present embodiment, (a) is a plan view, (b) is a cross-sectional view at HH ′ of (a), and (c) is a bottom view. is there. The ceramic metal joined body 10n of the example shown in FIG. 7 has the ceramic metal joined body 10g of the example shown in FIG. 6 as a basic configuration, the second metal member 5 is mainly composed of copper, the second metal layer 2 and the second metal A second bonding layer 7 mainly composed of copper is disposed between the member 5 and the member 5. With such a configuration, since the second metal layer 4 and the second metal member 5 can be joined at a low temperature (for example, 325 ° C.), the second metal member 5 is less likely to warp, so the thickness thereof is reduced. It can be increased and higher heat dissipation characteristics can be obtained.

なお、第1結合層2および第2結合層4の主成分である銅は、無酸素銅,タフピッチ銅およびりん脱酸銅から選ばれる1種以上であることが好適である。特に、無酸素銅のうち、銅の含有量が99.995質量%以上である線形結晶無酸素銅,単結晶状高純度無酸素銅お
よび真空溶解銅のいずれかを用いることが好適である。
In addition, it is preferable that the copper which is a main component of the 1st coupling layer 2 and the 2nd coupling layer 4 is 1 or more types chosen from an oxygen free copper, a tough pitch copper, and phosphorus deoxidation copper. In particular, among oxygen-free copper, it is preferable to use any of linear crystalline oxygen-free copper, single-crystal high-purity oxygen-free copper, and vacuum-dissolved copper having a copper content of 99.995% by mass or more.

図1〜7で示したセラミックス基板1は、例えば、主成分が窒化珪素、窒化アルミニウムまたは酸化アルミニウムであって、第1金属部材3および第2金属部材5は、銅またはアルミニウムを主成分とする。セラミックス基板1の主成分が酸化アルミニウムである場
合には、放熱特性が高いという点で、酸化アルミニウムの単結晶(サファイア)であることが好適である。本実施形態における主成分とは、上記部材をそれぞれ構成する全成分100質量%のうち、60質量%以上を占める成分であり、80質量%以上を占めることがより好適である。主成分の同定については、X線回折法を用い、主成分の含有量については蛍光X線分析法またはICP発光分光分析法により求めればよい。具体的な主成分の含有量の求め方については、セラミックス基板1の主成分が窒化珪素であるときには、蛍光X線分析法またはICP発光分光分析法で珪素の含有量を求め、窒化物に換算して窒化珪素の含有量を求めればよい。また、セラミックス基板1の主成分が窒化アルミニウムであるときには、上記と同様の方法でアルミニウムの含有量を求め、窒化物に換算して窒化アルミニウムの含有量を求めればよい。。第1金属部材3,第2金属部材5,第1結合層6および第2結合層7の各主成分が銅である場合には、電気抵抗が低く、熱伝導率が高く、放熱特性に優れたものとすべく、銅の含有量の多い無酸素銅,タフピッチ銅およびりん脱酸銅から選ばれる1種以上であることが好適である。特に、無酸素銅のうち、銅の含有量が99.995質量%以上である線形結晶無酸素銅,単結晶状高純度無酸素銅および真空溶解
銅のいずれかを用いることが好適である。
1 to 7, for example, the main component is silicon nitride, aluminum nitride, or aluminum oxide, and the first metal member 3 and the second metal member 5 are mainly composed of copper or aluminum. . In the case where the main component of the ceramic substrate 1 is aluminum oxide, it is preferably an aluminum oxide single crystal (sapphire) in terms of high heat dissipation characteristics. The main component in the present embodiment is a component occupying 60% by mass or more, more preferably 80% by mass or more, out of 100% by mass of all the components constituting each of the above members. For identification of the main component, an X-ray diffraction method may be used, and the content of the main component may be determined by fluorescent X-ray analysis or ICP emission spectroscopic analysis. Regarding a specific method for determining the content of the main component, when the main component of the ceramic substrate 1 is silicon nitride, the content of silicon is determined by fluorescent X-ray analysis or ICP emission spectroscopic analysis and converted to nitride. Thus, the content of silicon nitride may be obtained. Further, when the main component of the ceramic substrate 1 is aluminum nitride, the aluminum content may be obtained by the same method as described above, and the aluminum nitride content may be obtained in terms of nitride. . When the main component of each of the first metal member 3, the second metal member 5, the first bonding layer 6 and the second bonding layer 7 is copper, the electric resistance is low, the thermal conductivity is high, and the heat dissipation characteristics are excellent. Therefore, it is preferable to use at least one selected from oxygen-free copper, tough pitch copper, and phosphorus deoxidized copper having a high copper content. In particular, among oxygen-free copper, it is preferable to use any of linear crystalline oxygen-free copper, single-crystal high-purity oxygen-free copper, and vacuum-dissolved copper having a copper content of 99.995% by mass or more.

ここで、セラミックス基板1は、例えば、直径が50mm以上100mm以下であって、厚みが0.3mm以上12mm以下である。また、第1金属部材3は、例えば、第1主面P1および第2主面P2の直径がそれぞれ30mm以上38mm以下、40mm以上48mm以下であって、厚みが2mm以上20mm以下である。また、第2金属部材5は、例えば、第3主面P3および第4主面P4の直径がそれぞれ30mm以上38mm、40mm以上48mm以下であって、厚みが2mm以上20mm以下である。   Here, the ceramic substrate 1 has, for example, a diameter of 50 mm to 100 mm and a thickness of 0.3 mm to 12 mm. In addition, the first metal member 3 has, for example, a diameter of the first main surface P1 and the second main surface P2 of 30 mm to 38 mm, 40 mm to 48 mm, and a thickness of 2 mm to 20 mm. The second metal member 5 has, for example, a diameter of the third main surface P3 and the fourth main surface P4 of 30 mm to 38 mm and 40 mm to 48 mm, respectively, and a thickness of 2 mm to 20 mm.

また、第1金属層2および第2金属層4は、いずれも厚みが、例えば、0.1mm以上0.6mm以下である。   The first metal layer 2 and the second metal layer 4 both have a thickness of, for example, 0.1 mm or more and 0.6 mm or less.

また、第1金属層2および第2金属層4は、例えば、銀および銅と、インジウム,亜鉛および錫から選択される少なくとも1種の元素Aと、チタン,ジルコニウム,ハフニウムおよびニオブから選択される少なくとも1種の元素Bと、モリブデン,オスミウム,レニウムおよびタングステンから選択される少なくとも1種の元素Cとを含み、銀、銅、元素A,BおよびCの含有量の合計100質量%のうち、銅の含有量が35質量%以上50質量%以下、元素A,BおよびCの各含有量がそれぞれ2質量%以上22質量%以下、1質量%以上8質量%以下、1質量%以下8質量%以下であり、残部が銀からなることが好適である。   The first metal layer 2 and the second metal layer 4 are selected from, for example, silver and copper, at least one element A selected from indium, zinc and tin, and titanium, zirconium, hafnium and niobium. Including at least one element B and at least one element C selected from molybdenum, osmium, rhenium and tungsten, and a total content of 100% by mass of silver, copper, elements A, B and C, Copper content is 35% by mass or more and 50% by mass or less, and each content of elements A, B and C is 2% by mass or more and 22% by mass or less, 1% by mass or more and 8% by mass or less, 1% by mass or less 8% by mass, respectively. % Or less, and the balance is preferably made of silver.

また、第1結合層6および第2結合層7は、いずれも厚みが、例えば、0.02mm以上0.1mm以下である。   Moreover, as for the 1st coupling layer 6 and the 2nd coupling layer 7, all are 0.02 mm or more and 0.1 mm or less in thickness, for example.

そして、本実施形態の回路基板は、上述したセラミックス金属接合体を用いたものであって、第1金属部材3または第2金属部材5のうち一方が電子部品が搭載される回路部材に、第1金属部材または第2金属部材5の他方(上記一方と異なる方の金属部材)が、発熱した電子部品の熱を放熱する放熱部材に相当する。本実施形態の回路基板は、上述した通り、少なくともセラミックス基板1における第1金属部材3側の外周面を起点とするクラックが入りにくく、長期間に亘って信頼性を維持することができる。   The circuit board of the present embodiment uses the above-described ceramic metal joined body, and one of the first metal member 3 and the second metal member 5 is connected to the circuit member on which the electronic component is mounted. The other of the one metal member or the second metal member 5 (the metal member different from the above one) corresponds to a heat dissipating member that dissipates the heat of the generated electronic component. As described above, the circuit board of the present embodiment is unlikely to crack at least from the outer peripheral surface of the ceramic substrate 1 on the first metal member 3 side, and can maintain reliability over a long period of time.

次に、本実施形態のセラミックス金属接合体の製造方法の一例について説明する。   Next, an example of the manufacturing method of the ceramic metal joined body of this embodiment is demonstrated.

まず、円板状のセラミックス基板1を大気雰囲気中、800℃以上900℃以下で熱処理することで、セラミックス基板1の表面に付着した有機物や残留炭素を除去する。   First, the disk-shaped ceramic substrate 1 is heat-treated at 800 ° C. or higher and 900 ° C. or lower in an air atmosphere to remove organic substances and residual carbon adhering to the surface of the ceramic substrate 1.

次に、熱処理したセラミックス基板1の一方主面1Aおよび他方主面1Bの略全面に、ペースト状のろう材を第1金属部材3および第2金属部材5の配置に合わせて、スクリーン印刷法,加圧印刷法および刷毛塗り法等のいずれかの方法で塗布した後、120℃以上150℃以下で乾燥させる。   Next, a paste-like brazing material is arranged on substantially the entire surface of the one main surface 1A and the other main surface 1B of the heat-treated ceramic substrate 1 in accordance with the arrangement of the first metal member 3 and the second metal member 5, and the screen printing method, After applying by any method such as pressure printing method and brush coating method, it is dried at 120 ° C. or higher and 150 ° C. or lower.

ここで、ろう材の成分は、第1金属層2および第2金属層4をそれぞれ構成する成分である。そして、セラミックス基板1の一方主面1Aに塗布して乾燥させたろう材の上に、例えば、図1〜8のいずれかに示す形状の第1金属部材3を配置し、また、他方主面1Bに塗布して乾燥させたろう材の上に、図1〜8のいずれかに示す形状の第2金属部材5をそれぞれ配置し、真空雰囲気中、800℃以上900℃以下の範囲で加熱することにより、第1金属部材3および第2金属部材5を、それぞれ第1金属層2および第2金属層4を介してセラミックス基板1に接合することができる。   Here, the component of the brazing material is a component constituting each of the first metal layer 2 and the second metal layer 4. And the 1st metal member 3 of the shape shown in either of FIGS. 1-8 is arrange | positioned, for example on the brazing material apply | coated and dried to one main surface 1A of the ceramic substrate 1, and the other main surface 1B By placing the second metal member 5 having the shape shown in any of FIGS. 1 to 8 on the brazing material applied and dried on the substrate, and heating in a vacuum atmosphere in the range of 800 ° C. or more and 900 ° C. or less. The first metal member 3 and the second metal member 5 can be bonded to the ceramic substrate 1 via the first metal layer 2 and the second metal layer 4, respectively.

そして、接合された第1金属部材3および第2金属部材5の表面にレジストを印刷して、120℃以上150℃以下でレジストを乾燥させて、硝弗硫酸,弗硝酸、塩酸または塩化第2鉄水溶液等を用いてエッチングすることにより、第1金属部材3および第2金属部材5のそれぞれ周囲におけるレジストが印刷されていない第1金属層2および第2金属層4の不要な部分を除去することができる。そして、水酸化ナトリウム水溶液や水酸化カリウム水溶液等のアルカリ水溶液を用いてレジストを除去することで、セラミックス金属接合体10a〜10kのいずれかを得ることができる。   Then, a resist is printed on the surfaces of the first metal member 3 and the second metal member 5 that are joined, and the resist is dried at 120 ° C. or higher and 150 ° C. or lower. Etching using an aqueous iron solution or the like removes unnecessary portions of the first metal layer 2 and the second metal layer 4 on which the resist is not printed around the first metal member 3 and the second metal member 5, respectively. be able to. And any one of ceramic metal joined bodies 10a-10k can be obtained by removing a resist using alkaline aqueous solution, such as sodium hydroxide aqueous solution and potassium hydroxide aqueous solution.

また、図6に示すセラミックス金属接合体10gを得るには、セラミックス基板1の第1主面に塗布して乾燥させたろう材の上に、銅を主成分とする金属箔を、第2主面に塗布して乾燥させたろう材の上に、図6に示す形状の第2金属部材5をそれぞれ配置し、真空雰囲気中、800℃以上900℃以下の範囲で加熱することにより、金属箔および第2金属部材5をそれぞれ第1金属層2,第2金属層4を介してセラミックス基板1に接合することができる。   In order to obtain the ceramic-metal bonded body 10g shown in FIG. 6, a metal foil mainly composed of copper is applied to the second main surface on the brazing material applied to the first main surface of the ceramic substrate 1 and dried. The second metal member 5 having the shape shown in FIG. 6 is placed on the brazing material applied and dried on the metal, and heated in the range of 800 ° C. or more and 900 ° C. or less in a vacuum atmosphere, so that the metal foil and The two metal members 5 can be bonded to the ceramic substrate 1 via the first metal layer 2 and the second metal layer 4, respectively.

そして、金属箔の主面を研磨した後、第1金属部材3を配置して、水素、窒素,ネオンまたはアルゴン等のいずれかから選ばれる雰囲気中、300℃以上500℃以下で加熱し、30MPa以上の圧力で加圧した後、銅が酸化しない温度(50℃)まで冷却し、この温度以下になった後、加圧を終了することにより第1金属層2および第1結合層6を介して第1金属部材3をセラミックス基板1に接合することができる。   And after grind | polishing the main surface of metal foil, the 1st metal member 3 is arrange | positioned, and it heats at 300-500 degreeC in the atmosphere chosen from hydrogen, nitrogen, neon, argon, etc., and 30 MPa After pressurizing with the above pressure, it cools to the temperature (50 degreeC) which copper does not oxidize, and after becoming below this temperature, a pressurization is complete | finished through the 1st metal layer 2 and the 1st coupling layer 6. Thus, the first metal member 3 can be bonded to the ceramic substrate 1.

そして、接合された第1金属部材3および第2金属部材5の表面にレジストを印刷して、120℃以上150℃以下でレジストを乾燥させて、硝弗硫酸,弗硝酸、塩酸または塩化第2鉄水溶液等を用いてエッチングすることにより、第1金属部材3および第2金属部材5のそれぞれ周囲におけるレジストが印刷されていない第1金属層2,第1結合層6および第2金属層4の不要な部分を除去することができる。そして、水酸化ナトリウム水溶液や水酸化カリウム水溶液等のアルカリ水溶液を用いてレジストを除去することで、セラミックス金属接合体10gを得ることができる。   Then, a resist is printed on the surfaces of the first metal member 3 and the second metal member 5 that are joined, and the resist is dried at 120 ° C. or higher and 150 ° C. or lower. Etching using an aqueous iron solution or the like allows the first metal layer 2, the first bonding layer 6, and the second metal layer 4 on which the resist around each of the first metal member 3 and the second metal member 5 is not printed. Unnecessary portions can be removed. And 10 g of ceramic metal joined bodies can be obtained by removing a resist using alkaline aqueous solution, such as sodium hydroxide aqueous solution and potassium hydroxide aqueous solution.

また、図7に示すセラミックス金属接合体10hを得るには、セラミックス基板1の第1主面および第2主面に塗布して乾燥させたろう材の上に、それぞれ銅を主成分とする金属箔を配置して、真空雰囲気中、800℃以上900℃以下の範囲で加熱することにより、金属箔をそれぞれ第1金属層2,第2金属層4を介してセラミックス基板1に接合することができる。   Further, in order to obtain the ceramic-metal bonded body 10h shown in FIG. 7, metal foils mainly composed of copper on the brazing material coated and dried on the first main surface and the second main surface of the ceramic substrate 1, respectively. The metal foil can be bonded to the ceramic substrate 1 via the first metal layer 2 and the second metal layer 4 respectively by heating in a range of 800 ° C. or higher and 900 ° C. or lower in a vacuum atmosphere. .

そして、両方の金属箔の主面を研磨した後、第1金属部材3および第2金属部材5を配置して、水素、窒素,ネオンまたはアルゴン等のいずれかから選ばれる雰囲気中、300
℃以上500℃以下で加熱し、30MPa以上の圧力で加圧した後、銅が酸化しない温度(50℃)まで冷却し、この温度以下になった後、加圧を終了することにより第1金属層2および第1結合層6を介して第1金属部材3を、また、第2金属層4および第2結合層7を介して第2金属部材5をそれぞれセラミックス基板1に接合することができる。
And after grind | polishing the main surface of both metal foil, the 1st metal member 3 and the 2nd metal member 5 are arrange | positioned, and in the atmosphere chosen from hydrogen, nitrogen, neon, argon, etc., 300
The first metal is heated at a temperature not lower than 500 ° C. and pressurized at a pressure of 30 MPa or higher, then cooled to a temperature at which copper does not oxidize (50 ° C.). The first metal member 3 can be bonded to the ceramic substrate 1 via the layer 2 and the first bonding layer 6, and the second metal member 5 can be bonded to the ceramic substrate 1 via the second metal layer 4 and the second bonding layer 7. .

そして、接合された第1金属部材3および第2金属部材5の表面にレジストを印刷して、120℃以上150℃以下でレジストを乾燥させて、硝弗硫酸,弗硝酸、塩酸または塩化第2鉄水溶液等を用いてエッチングすることにより、第1金属部材3および第2金属部材5のそれぞれ周囲におけるレジストが印刷されていない第1金属層2,第1結合層6,第2金属層4および第2結合層7の不要な部分を除去することができる。そして、水酸化ナトリウム水溶液や水酸化カリウム水溶液等のアルカリ水溶液を用いてレジストを除去することで、セラミックス金属接合体10hを得ることができる。   Then, a resist is printed on the surfaces of the first metal member 3 and the second metal member 5 that are joined, and the resist is dried at 120 ° C. or higher and 150 ° C. or lower. Etching using an aqueous iron solution or the like allows the first metal layer 2, the first bonding layer 6, the second metal layer 4 and the first metal member 3 and the second metal member 5 not to be printed with resist around each of them. Unnecessary portions of the second bonding layer 7 can be removed. Then, the ceramic metal joined body 10h can be obtained by removing the resist using an aqueous alkali solution such as an aqueous sodium hydroxide solution or an aqueous potassium hydroxide solution.

以上のような製造方法で得られたセラミックス金属接合体10は、熱が繰り返しセラミックス基板1にかかっても、第1金属部材3側の外周部における拘束が低減して
また、上述した特性を有する本実施形態のセラミックス金属接合体を用いた回路基板は、セラミックス基板1における第1金属部材3側の外周面を起点とするクラックが入りにくくなっているので、長期間に亘って信頼性を維持することができる。
The ceramic-metal bonded body 10 obtained by the manufacturing method as described above has the above-described characteristics in which the constraint on the outer peripheral portion on the first metal member 3 side is reduced even when heat is repeatedly applied to the ceramic substrate 1. In the circuit board using the ceramic metal joined body of the present embodiment, since cracks starting from the outer peripheral surface on the first metal member 3 side in the ceramic substrate 1 are difficult to enter, reliability is maintained over a long period of time. can do.

1:セラミックス基板
2:第1金属層
3:第1金属部材
4:第2金属層
5:第2金属部材
6:第1結合層
7:第2結合層
10:セラミックス金属接合体
1: Ceramic substrate 2: First metal layer 3: First metal member 4: Second metal layer 5: Second metal member 6: First bonding layer 7: Second bonding layer
10: Ceramics metal joint

Claims (6)

円板状のセラミックス基板と、該セラミックス基板の一方主面側に第1金属層を介して接合された第1金属部材と、前記セラミックス基板の他方主面側に第2金属層を介して接合された第2金属部材とを有するセラミックス金属接合体であって、
前記第1金属部材は、前記セラミックス基板の前記一方主面と対向する円状の第1主面と、前記第1主面と反対の側の円状の第2主面とを有し、前記第2主面に比べて前記第1主面の面積が小さく、
前記第1金属部材は銅を主成分とし、前記第1金属層はろう材であり、前記第1金属層と前記第1金属部材との間に銅箔を含む第1結合層を配置してなることを特徴とするセラミックス金属接合体。
A disk-shaped ceramic substrate, a first metal member bonded to one main surface side of the ceramic substrate via a first metal layer, and a second metal layer bonded to the other main surface side of the ceramic substrate A ceramic metal joined body having a second metal member formed,
The first metal member has a circular first main surface facing the one main surface of the ceramic substrate, and a circular second main surface on the side opposite to the first main surface, The area of the first main surface is smaller than that of the second main surface,
Wherein the first metal member is a main component of copper, the first metal layer is a brazing material, by disposing the first coupling layer comprising copper foil between the first metal member and the first metal layer A ceramic metal joined body characterized by comprising:
前記第1金属部材は、前記第1主面の近傍部分の外周面に第1の段差を備えていることを特徴とする請求項1に記載のセラミックス金属接合体。   2. The ceramic metal bonded body according to claim 1, wherein the first metal member includes a first step on an outer peripheral surface in a vicinity of the first main surface. 前記第2金属部材は、前記セラミックス基板の前記他方主面と対向する円状の第3主面と、前記第3主面と反対の側の円状の第4主面とを有し、前記第4主面に比べて前記第3主面の面積が小さいことを特徴とする請求項1または請求項2に記載のセラミックス金属接合体。   The second metal member has a circular third main surface facing the other main surface of the ceramic substrate, and a circular fourth main surface opposite to the third main surface, The ceramic metal joined body according to claim 1 or 2, wherein an area of the third main surface is smaller than that of the fourth main surface. 前記第2金属部材は、前記第3主面の近傍部分の外周面に第2の段差を備えていることを特徴とする請求項3に記載のセラミックス金属接合体。   4. The ceramic metal bonded body according to claim 3, wherein the second metal member includes a second step on an outer peripheral surface in a vicinity of the third main surface. 5. 円板状のセラミックス基板と、該セラミックス基板の一方主面側に第1金属層を介して接合された第1金属部材と、前記セラミックス基板の他方主面側に第2金属層を介して接合された第2金属部材とを有するセラミックス金属接合体であって、
前記第1金属部材は、前記セラミックス基板の前記一方主面と対向する円状の第1主面と、前記第1主面と反対の側の円状の第2主面とを有し、前記第2主面に比べて前記第1主面の面積が小さく、
前記第2金属部材は銅を主成分とし、前記第2金属層はろう材であり、前記第2金属層と前記第2金属部材との間に銅箔を含む第2結合層を配置してなることを特徴とするセラミックス金属接合体。
A disk-shaped ceramic substrate, a first metal member bonded to one main surface side of the ceramic substrate via a first metal layer, and a second metal layer bonded to the other main surface side of the ceramic substrate A ceramic metal joined body having a second metal member formed,
The first metal member has a circular first main surface facing the one main surface of the ceramic substrate, and a circular second main surface on the side opposite to the first main surface, The area of the first main surface is smaller than that of the second main surface,
The second metal member is a main component of copper, said second metal layer is a brazing material, by placing a second coupling layer comprising copper foil between the second metal member and the second metal layer A ceramic metal joined body characterized by comprising:
請求項1乃至請求項5のいずれかに記載のセラミックス金属接合体を用いたことを特徴とする回路基板。   A circuit board using the ceramic-metal bonded body according to any one of claims 1 to 5.
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