JP6462720B2 - 電子ビームの３ビームアパーチャアレイ - Google Patents

電子ビームの３ビームアパーチャアレイ Download PDF

Info

Publication number
JP6462720B2
JP6462720B2 JP2016565678A JP2016565678A JP6462720B2 JP 6462720 B2 JP6462720 B2 JP 6462720B2 JP 2016565678 A JP2016565678 A JP 2016565678A JP 2016565678 A JP2016565678 A JP 2016565678A JP 6462720 B2 JP6462720 B2 JP 6462720B2
Authority
JP
Japan
Prior art keywords
column
openings
pitch
lines
baa
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016565678A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017521852A (ja
Inventor
エイ． ボロドフスキー、ヤン
エイ． ボロドフスキー、ヤン
ダブリュー． ネルソン、ドナルド
ダブリュー． ネルソン、ドナルド
シー． フィリップス、マーク
シー． フィリップス、マーク
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of JP2017521852A publication Critical patent/JP2017521852A/ja
Application granted granted Critical
Publication of JP6462720B2 publication Critical patent/JP6462720B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/203—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H01J37/3026—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0451—Diaphragms with fixed aperture
    • H01J2237/0453—Diaphragms with fixed aperture multiple apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/303—Electron or ion optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30405—Details
    • H01J2237/30416—Handling of data
    • H01J2237/30422—Data compression
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30433—System calibration
    • H01J2237/30438—Registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H01J2237/31762—Computer and memory organisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H01J2237/31764—Dividing into sub-patterns

Landscapes

  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2016565678A 2014-06-13 2014-12-19 電子ビームの３ビームアパーチャアレイ Active JP6462720B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201462012214P 2014-06-13 2014-06-13
US62/012,214 2014-06-13
PCT/US2014/071665 WO2015191105A1 (en) 2014-06-13 2014-12-19 Ebeam three beam aperture array

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2018244840A Division JP6786581B2 (ja) 2014-06-13 2018-12-27 電子ビームの３ビームアパーチャアレイ

Publications (2)

Publication Number Publication Date
JP2017521852A JP2017521852A (ja) 2017-08-03
JP6462720B2 true JP6462720B2 (ja) 2019-01-30

Family

ID=54834048

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2016565678A Active JP6462720B2 (ja) 2014-06-13 2014-12-19 電子ビームの３ビームアパーチャアレイ
JP2018244840A Active JP6786581B2 (ja) 2014-06-13 2018-12-27 電子ビームの３ビームアパーチャアレイ

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2018244840A Active JP6786581B2 (ja) 2014-06-13 2018-12-27 電子ビームの３ビームアパーチャアレイ

Country Status (7)

Country Link
US (2) US9897908B2 (de)
EP (1) EP3155645A4 (de)
JP (2) JP6462720B2 (de)
KR (1) KR102457089B1 (de)
CN (1) CN106463351B (de)
TW (2) TWI598923B (de)
WO (1) WO2015191105A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010033429A1 (en) 2008-09-19 2010-03-25 Draeger Medical Systems, Inc. Warming therapy device including resuscitation control system
EP3183742A4 (de) * 2014-08-19 2018-07-18 Intel Corporation Eckenrundungskorrektur für elektronenstrahl (ebeam)-direktschreibsystem
KR102459585B1 (ko) * 2014-08-19 2022-10-27 인텔 코포레이션 Ｅ 빔 범용 커터를 이용한 교차 스캔 근접 보정
US10312091B1 (en) * 2015-10-13 2019-06-04 Multibeam Corporation Secure permanent integrated circuit personalization
WO2018063325A1 (en) * 2016-09-30 2018-04-05 Intel Corporation Aperture array rotation to enhance ebeam process margin
JP6819509B2 (ja) * 2017-08-10 2021-01-27 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置
US11469108B2 (en) * 2018-08-31 2022-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. System, semiconductor device and method
TWI773030B (zh) * 2019-12-20 2022-08-01 荷蘭商Ａｓｍｌ荷蘭公司 用於多射束檢測系統之多模操作
JP2022034866A (ja) * 2020-08-19 2022-03-04 株式会社ニューフレアテクノロジー マルチ電子ビーム検査装置及びその調整方法
CN116325069A (zh) * 2020-09-03 2023-06-23 Asml荷兰有限公司 多束带电粒子柱

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6142128A (ja) * 1984-08-06 1986-02-28 Nippon Telegr & Teleph Corp <Ntt> 荷電ビ−ム露光装置
JP3730263B2 (ja) * 1992-05-27 2005-12-21 ケーエルエー・インストルメンツ・コーポレーション 荷電粒子ビームを用いた自動基板検査の装置及び方法
JP3310400B2 (ja) * 1993-02-19 2002-08-05 富士通株式会社 電子ビーム露光方法および露光装置
JPH07297107A (ja) * 1994-04-26 1995-11-10 Fujitsu Ltd 多電極偏向器，その製造方法及び荷電粒子ビーム装置
US6177680B1 (en) * 1998-11-20 2001-01-23 International Business Machines Corporation Correction of pattern-dependent errors in a particle beam lithography system
JP2000277425A (ja) * 1999-03-26 2000-10-06 Nec Corp 電子線描画方法とその装置
JP2000323401A (ja) * 1999-05-14 2000-11-24 Advantest Corp 荷電粒子ビーム露光装置及び露光方法
US6333508B1 (en) 1999-10-07 2001-12-25 Lucent Technologies, Inc. Illumination system for electron beam lithography tool
JP2002118060A (ja) * 2000-07-27 2002-04-19 Toshiba Corp 荷電ビーム露光装置、荷電ビーム露光方法、露光データ作成方法、露光データを作成するプログラムを記録したコンピュータ読取り可能な記録媒体、及び、露光データを記録したコンピュータ読取り可能な記録媒体
JP2002175969A (ja) * 2000-12-07 2002-06-21 Hitachi Ltd パターン検証方法及びデータ処理システム
GB2414111B (en) * 2004-04-30 2010-01-27 Ims Nanofabrication Gmbh Advanced pattern definition for particle-beam processing
US8026495B2 (en) * 2005-10-28 2011-09-27 Carl Zeiss Sms Gmbh Charged particle beam exposure system
WO2007067296A2 (en) 2005-12-02 2007-06-14 Alis Corporation Ion sources, systems and methods
JP4402077B2 (ja) * 2006-06-07 2010-01-20 キヤノン株式会社 荷電粒子線レンズアレイ、露光装置及びデバイス製造方法
JP5680557B2 (ja) 2009-02-22 2015-03-04 マッパー・リソグラフィー・アイピー・ビー．ブイ． 荷電粒子リソグラフィ装置
JP5988537B2 (ja) * 2010-06-10 2016-09-07 株式会社ニコン 荷電粒子線露光装置及びデバイス製造方法
JP5744564B2 (ja) * 2011-02-25 2015-07-08 キヤノン株式会社 描画装置、描画方法、および、物品の製造方法
JP5963139B2 (ja) * 2011-10-03 2016-08-03 株式会社Ｐａｒａｍ 電子ビーム描画方法および描画装置
US8878143B2 (en) 2011-10-03 2014-11-04 Param Corporation Electron beam lithography device and lithographic method
JP6087506B2 (ja) * 2012-01-31 2017-03-01 キヤノン株式会社 描画方法及び物品の製造方法

Also Published As

Publication number Publication date
US10067416B2 (en) 2018-09-04
EP3155645A4 (de) 2018-02-14
KR102457089B1 (ko) 2022-10-21
JP2017521852A (ja) 2017-08-03
JP6786581B2 (ja) 2020-11-18
JP2019057735A (ja) 2019-04-11
TWI598923B (zh) 2017-09-11
TW201603097A (zh) 2016-01-16
KR20170017879A (ko) 2017-02-15
CN106463351A (zh) 2017-02-22
TW201804506A (zh) 2018-02-01
US9897908B2 (en) 2018-02-20
WO2015191105A1 (en) 2015-12-17
US20180143526A1 (en) 2018-05-24
US20170076905A1 (en) 2017-03-16
CN106463351B (zh) 2019-12-03
EP3155645A1 (de) 2017-04-19

Similar Documents

Publication Publication Date Title
KR102459585B1 (ko) Ｅ 빔 범용 커터를 이용한 교차 스캔 근접 보정
JP6462720B2 (ja) 電子ビームの３ビームアパーチャアレイ
JP6555620B2 (ja) 電子ビームスタッガードビームアパーチャアレイ
KR102395478B1 (ko) Ｅ 빔을 이용한 층 상의 단방향 금속
JP6526718B2 (ja) 電子ビームの非ユニバーサルカッタ
US10578970B2 (en) Ebeam universal cutter
KR102387713B1 (ko) 즉각적인 e 빔 정렬
KR102389005B1 (ko) Ｅ 빔 스루풋을 위한 데이터 압축
KR102386548B1 (ko) 전자 빔(ｅ 빔) 직접 기입 시스템을 위한 코너 라운딩 보정

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20171214

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20181127

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20181128

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20181227

R150 Certificate of patent or registration of utility model

Ref document number: 6462720

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250