JP6458985B2 - Resin composition, insulating film using the same, and semiconductor device - Google Patents
Resin composition, insulating film using the same, and semiconductor device Download PDFInfo
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- JP6458985B2 JP6458985B2 JP2014215035A JP2014215035A JP6458985B2 JP 6458985 B2 JP6458985 B2 JP 6458985B2 JP 2014215035 A JP2014215035 A JP 2014215035A JP 2014215035 A JP2014215035 A JP 2014215035A JP 6458985 B2 JP6458985 B2 JP 6458985B2
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- resin composition
- insulating film
- film
- mass
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- 239000011342 resin composition Substances 0.000 title claims description 55
- 239000004065 semiconductor Substances 0.000 title claims description 13
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- 229920000647 polyepoxide Polymers 0.000 claims description 31
- 239000003054 catalyst Substances 0.000 claims description 30
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 24
- 239000011229 interlayer Substances 0.000 claims description 11
- 229920001955 polyphenylene ether Polymers 0.000 claims description 11
- 150000001451 organic peroxides Chemical class 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 8
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 8
- 229920001187 thermosetting polymer Polymers 0.000 claims description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-M acrylate group Chemical group C(C=C)(=O)[O-] NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 5
- 125000005462 imide group Chemical group 0.000 claims description 5
- 125000001624 naphthyl group Chemical group 0.000 claims description 4
- 229920006465 Styrenic thermoplastic elastomer Polymers 0.000 claims description 3
- 239000010408 film Substances 0.000 description 92
- 238000001723 curing Methods 0.000 description 34
- -1 vinylbenzyl group Chemical group 0.000 description 21
- 238000000034 method Methods 0.000 description 16
- 239000012787 coverlay film Substances 0.000 description 15
- 229920000106 Liquid crystal polymer Polymers 0.000 description 13
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 13
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 10
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- 125000004432 carbon atom Chemical group C* 0.000 description 8
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- 230000007774 longterm Effects 0.000 description 8
- 238000003860 storage Methods 0.000 description 8
- 239000002966 varnish Substances 0.000 description 8
- 239000002313 adhesive film Substances 0.000 description 7
- 125000000217 alkyl group Chemical group 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000006087 Silane Coupling Agent Substances 0.000 description 6
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000013007 heat curing Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229920002743 polystyrene-poly(ethylene-ethylene/propylene) block-polystyrene Polymers 0.000 description 6
- 239000011888 foil Substances 0.000 description 5
- XZKLXPPYISZJCV-UHFFFAOYSA-N 1-benzyl-2-phenylimidazole Chemical compound C1=CN=C(C=2C=CC=CC=2)N1CC1=CC=CC=C1 XZKLXPPYISZJCV-UHFFFAOYSA-N 0.000 description 4
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229920002725 thermoplastic elastomer Polymers 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000004793 Polystyrene Substances 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
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- 238000000576 coating method Methods 0.000 description 3
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- 238000001035 drying Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229920002223 polystyrene Polymers 0.000 description 3
- 229920001935 styrene-ethylene-butadiene-styrene Polymers 0.000 description 3
- QEQBMZQFDDDTPN-UHFFFAOYSA-N (2-methylpropan-2-yl)oxy benzenecarboperoxoate Chemical compound CC(C)(C)OOOC(=O)C1=CC=CC=C1 QEQBMZQFDDDTPN-UHFFFAOYSA-N 0.000 description 2
- OVJHMJJVXOJMBB-UHFFFAOYSA-N 2-(1,3-dioxo-3a,4,5,6,7,7a-hexahydroisoindol-2-yl)ethyl prop-2-enoate Chemical compound C1CCCC2C(=O)N(CCOC(=O)C=C)C(=O)C21 OVJHMJJVXOJMBB-UHFFFAOYSA-N 0.000 description 2
- QCBSYPYHCJMQGB-UHFFFAOYSA-N 2-ethyl-1,3,5-triazine Chemical compound CCC1=NC=NC=N1 QCBSYPYHCJMQGB-UHFFFAOYSA-N 0.000 description 2
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 2
- SZUPZARBRLCVCB-UHFFFAOYSA-N 3-(2-undecylimidazol-1-yl)propanenitrile Chemical compound CCCCCCCCCCCC1=NC=CN1CCC#N SZUPZARBRLCVCB-UHFFFAOYSA-N 0.000 description 2
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000005062 Polybutadiene Substances 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 230000001588 bifunctional effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229920002857 polybutadiene Polymers 0.000 description 2
- 229920000346 polystyrene-polyisoprene block-polystyrene Polymers 0.000 description 2
- GJBRNHKUVLOCEB-UHFFFAOYSA-N tert-butyl benzenecarboperoxoate Chemical compound CC(C)(C)OOC(=O)C1=CC=CC=C1 GJBRNHKUVLOCEB-UHFFFAOYSA-N 0.000 description 2
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 2
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- KDGNCLDCOVTOCS-UHFFFAOYSA-N (2-methylpropan-2-yl)oxy propan-2-yl carbonate Chemical compound CC(C)OC(=O)OOC(C)(C)C KDGNCLDCOVTOCS-UHFFFAOYSA-N 0.000 description 1
- OXYKVVLTXXXVRT-UHFFFAOYSA-N (4-chlorobenzoyl) 4-chlorobenzenecarboperoxoate Chemical compound C1=CC(Cl)=CC=C1C(=O)OOC(=O)C1=CC=C(Cl)C=C1 OXYKVVLTXXXVRT-UHFFFAOYSA-N 0.000 description 1
- NALFRYPTRXKZPN-UHFFFAOYSA-N 1,1-bis(tert-butylperoxy)-3,3,5-trimethylcyclohexane Chemical compound CC1CC(C)(C)CC(OOC(C)(C)C)(OOC(C)(C)C)C1 NALFRYPTRXKZPN-UHFFFAOYSA-N 0.000 description 1
- HSLFISVKRDQEBY-UHFFFAOYSA-N 1,1-bis(tert-butylperoxy)cyclohexane Chemical compound CC(C)(C)OOC1(OOC(C)(C)C)CCCCC1 HSLFISVKRDQEBY-UHFFFAOYSA-N 0.000 description 1
- SSUJUUNLZQVZMO-UHFFFAOYSA-N 1,2,3,4,8,9,10,10a-octahydropyrimido[1,2-a]azepine Chemical compound C1CCC=CN2CCCNC21 SSUJUUNLZQVZMO-UHFFFAOYSA-N 0.000 description 1
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- AYMDJPGTQFHDSA-UHFFFAOYSA-N 1-(2-ethenoxyethoxy)-2-ethoxyethane Chemical compound CCOCCOCCOC=C AYMDJPGTQFHDSA-UHFFFAOYSA-N 0.000 description 1
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- DMWVYCCGCQPJEA-UHFFFAOYSA-N 2,5-bis(tert-butylperoxy)-2,5-dimethylhexane Chemical compound CC(C)(C)OOC(C)(C)CCC(C)(C)OOC(C)(C)C DMWVYCCGCQPJEA-UHFFFAOYSA-N 0.000 description 1
- VYFHKLLTDIJRSA-UHFFFAOYSA-N 2-(1,3-dioxo-3a,4,7,7a-tetrahydroisoindol-2-yl)ethyl prop-2-enoate Chemical compound C1C=CCC2C(=O)N(CCOC(=O)C=C)C(=O)C21 VYFHKLLTDIJRSA-UHFFFAOYSA-N 0.000 description 1
- VDPSPUBXLOLDNB-UHFFFAOYSA-N 2-(1,3-dioxo-4,5,6,7-tetrahydroisoindol-2-yl)ethyl prop-2-enoate Chemical compound O=C1N(CCOC(=O)C=C)C(=O)C2=C1CCCC2 VDPSPUBXLOLDNB-UHFFFAOYSA-N 0.000 description 1
- XMNIXWIUMCBBBL-UHFFFAOYSA-N 2-(2-phenylpropan-2-ylperoxy)propan-2-ylbenzene Chemical compound C=1C=CC=CC=1C(C)(C)OOC(C)(C)C1=CC=CC=C1 XMNIXWIUMCBBBL-UHFFFAOYSA-N 0.000 description 1
- YTWBFUCJVWKCCK-UHFFFAOYSA-N 2-heptadecyl-1h-imidazole Chemical compound CCCCCCCCCCCCCCCCCC1=NC=CN1 YTWBFUCJVWKCCK-UHFFFAOYSA-N 0.000 description 1
- WFUGQJXVXHBTEM-UHFFFAOYSA-N 2-hydroperoxy-2-(2-hydroperoxybutan-2-ylperoxy)butane Chemical compound CCC(C)(OO)OOC(C)(CC)OO WFUGQJXVXHBTEM-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- LLEASVZEQBICSN-UHFFFAOYSA-N 2-undecyl-1h-imidazole Chemical compound CCCCCCCCCCCC1=NC=CN1 LLEASVZEQBICSN-UHFFFAOYSA-N 0.000 description 1
- QLZINFDMOXMCCJ-UHFFFAOYSA-N 7-(7-hydroxyheptylperoxy)heptan-1-ol Chemical compound OCCCCCCCOOCCCCCCCO QLZINFDMOXMCCJ-UHFFFAOYSA-N 0.000 description 1
- OMIHGPLIXGGMJB-UHFFFAOYSA-N 7-oxabicyclo[4.1.0]hepta-1,3,5-triene Chemical compound C1=CC=C2OC2=C1 OMIHGPLIXGGMJB-UHFFFAOYSA-N 0.000 description 1
- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- TXTFYHTXBGYUCU-UHFFFAOYSA-N C(C=C)(=O)O.C(C=C)(=O)OCCN1C(C2C(C1=O)CCCC2)=O Chemical compound C(C=C)(=O)O.C(C=C)(=O)OCCN1C(C2C(C1=O)CCCC2)=O TXTFYHTXBGYUCU-UHFFFAOYSA-N 0.000 description 1
- MQIUGAXCHLFZKX-UHFFFAOYSA-N Di-n-octyl phthalate Natural products CCCCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCCC MQIUGAXCHLFZKX-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 208000034189 Sclerosis Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 125000005024 alkenyl aryl group Chemical group 0.000 description 1
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- 229910052782 aluminium Inorganic materials 0.000 description 1
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- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
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- 239000000919 ceramic Substances 0.000 description 1
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- 125000004122 cyclic group Chemical group 0.000 description 1
- 125000000392 cycloalkenyl group Chemical group 0.000 description 1
- 125000000596 cyclohexenyl group Chemical group C1(=CCCCC1)* 0.000 description 1
- 125000002433 cyclopentenyl group Chemical group C1(=CCCC1)* 0.000 description 1
- LSXWFXONGKSEMY-UHFFFAOYSA-N di-tert-butyl peroxide Chemical compound CC(C)(C)OOC(C)(C)C LSXWFXONGKSEMY-UHFFFAOYSA-N 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- AZDCYKCDXXPQIK-UHFFFAOYSA-N ethenoxymethylbenzene Chemical compound C=COCC1=CC=CC=C1 AZDCYKCDXXPQIK-UHFFFAOYSA-N 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000006038 hexenyl group Chemical group 0.000 description 1
- WJRBRSLFGCUECM-UHFFFAOYSA-N hydantoin Chemical compound O=C1CNC(=O)N1 WJRBRSLFGCUECM-UHFFFAOYSA-N 0.000 description 1
- 229940091173 hydantoin Drugs 0.000 description 1
- 150000002430 hydrocarbons Chemical group 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 125000005394 methallyl group Chemical group 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 125000004365 octenyl group Chemical group C(=CCCCCCC)* 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 238000005691 oxidative coupling reaction Methods 0.000 description 1
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 description 1
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- 230000000704 physical effect Effects 0.000 description 1
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- 229920000728 polyester Polymers 0.000 description 1
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- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 125000004368 propenyl group Chemical group C(=CC)* 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 238000005464 sample preparation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229920003048 styrene butadiene rubber Polymers 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- DLSMLZRPNPCXGY-UHFFFAOYSA-N tert-butylperoxy 2-ethylhexyl carbonate Chemical compound CCCCC(CC)COC(=O)OOOC(C)(C)C DLSMLZRPNPCXGY-UHFFFAOYSA-N 0.000 description 1
- CIHOLLKRGTVIJN-UHFFFAOYSA-N tert‐butyl hydroperoxide Chemical compound CC(C)(C)OO CIHOLLKRGTVIJN-UHFFFAOYSA-N 0.000 description 1
- 150000003918 triazines Chemical class 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- IUURMAINMLIZMX-UHFFFAOYSA-N tris(2-nonylphenyl)phosphane Chemical compound CCCCCCCCCC1=CC=CC=C1P(C=1C(=CC=CC=1)CCCCCCCCC)C1=CC=CC=C1CCCCCCCCC IUURMAINMLIZMX-UHFFFAOYSA-N 0.000 description 1
- WXAZIUYTQHYBFW-UHFFFAOYSA-N tris(4-methylphenyl)phosphane Chemical compound C1=CC(C)=CC=C1P(C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 WXAZIUYTQHYBFW-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
-
- C—CHEMISTRY; METALLURGY
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Description
本発明は、樹脂組成物、それを用いた絶縁フィルムおよび半導体装置に関する。
本発明の絶縁フィルムは、電気・電子用途の接着フィルムやプリント配線板のカバーレイフィルムに好適である。
本発明の半導体装置は、基板間の層間接着に、本発明の樹脂組成物もしくは本発明の絶縁フィルムを用いる。
The present invention relates to a resin composition, an insulating film using the same, and a semiconductor device.
The insulating film of the present invention is suitable for an adhesive film for electrical / electronic applications or a coverlay film for printed wiring boards.
The semiconductor device of the present invention uses the resin composition of the present invention or the insulating film of the present invention for interlayer adhesion between substrates.
近年、電気・電子機器に使用されるプリント配線板は、機器の小型化、軽量化、および、高性能化が進んでおり、特に多層プリント配線板に対し、さらなる高多層化、高密度化、薄型化、軽量化、高信頼性、および、成形加工性等が要求されている。
また、最近のプリント配線板における伝送信号の高速化要求に伴い、伝送信号の高周波化が顕著に進んでいる。これにより、プリント配線板に使用する材料に対して、高周波領域、具体的には、周波数1GHz以上の領域での電気信号損失を低減できることが求められる。
多層プリント配線板に使用される層間接着剤や、プリント配線板の表面保護膜(すなわち、カバーレイフィルム)として用いる接着フィルムについても、高周波領域で優れた電気特性(低誘電率(ε)、低誘電正接(tanδ))を示すことが求められる。
In recent years, printed wiring boards used in electrical and electronic equipment have been reduced in size, weight, and performance, especially for multilayer printed wiring boards. Thinning, lightening, high reliability, moldability, etc. are required.
In addition, with the recent demand for higher speed transmission signals in printed wiring boards, the frequency of transmission signals has increased significantly. Thereby, it is required that the material used for the printed wiring board can reduce electric signal loss in a high frequency region, specifically, in a region having a frequency of 1 GHz or more.
Excellent electrical properties in the high frequency range (low dielectric constant (ε), low) are also used for interlayer adhesives used in multilayer printed wiring boards and adhesive films used as surface protective films (ie, coverlay films) for printed wiring boards. It is required to show a dielectric loss tangent (tan δ)).
特許文献1には、低誘電率、低誘電正接で、耐熱性、機械特性、耐薬品性、難燃性に優れた硬化物を与え、低温で硬化できる硬化性樹脂組成物、およびこれを用いた硬化性フィルム、およびこれらを硬化してなる硬化物、フィルムが開示されている。
一方、特許文献2には、フレキシブルプリント配線板(FPC)の配線をなす金属箔や、該フレキシブルプリント配線板の基板材料に対して優れた接着強度を有し、かつ、周波数1GHz以上の高周波領域での電気特性、具体的には、周波数1GHz以上の領域で低誘電率(ε)、および、低誘電正接(tanδ)を示すカバーレイフィルムが提案されている。このカバーレイフィルムは、電気・電子用途の接着フィルムや、多層プリント配線板の層間接着にも使用できる。
Patent Document 1 provides a curable resin composition that has a low dielectric constant, a low dielectric loss tangent, and has excellent heat resistance, mechanical properties, chemical resistance, and flame retardancy, and can be cured at low temperature. Curable films, cured products obtained by curing these films, and films are disclosed.
On the other hand, Patent Document 2 discloses a high-frequency region having excellent adhesive strength with respect to a metal foil forming a flexible printed wiring board (FPC) and a substrate material of the flexible printed wiring board, and having a frequency of 1 GHz or more. In particular, a coverlay film has been proposed that exhibits a low dielectric constant (ε) and a low dielectric loss tangent (tan δ) in a region of a frequency of 1 GHz or higher. This coverlay film can also be used for adhesive films for electrical and electronic applications and interlayer adhesion of multilayer printed wiring boards.
特許文献2に記載のカバーレイフィルムは、加熱硬化後において高周波での電気特性に優れており、周波数1〜10GHzの領域での誘電率を3.0以下、さらには2.5以下とすることができる。また、周波数1〜10GHzの領域での誘電正接(tanδ)を0.01以下、さらには0.0025以下にすることができる。 The coverlay film described in Patent Document 2 is excellent in electrical characteristics at high frequencies after heat curing, and the dielectric constant in the frequency range of 1 to 10 GHz is 3.0 or less, and further 2.5 or less. Can do. Further, the dielectric loss tangent (tan δ) in the frequency region of 1 to 10 GHz can be set to 0.01 or less, and further to 0.0025 or less.
高周波特性についての要求はますますきびしくなっており、周波数1〜10GHzの領域での誘電率は2.5以下であることが求められ、周波数1〜10GHzの領域での誘電正接(tanδ)を0.0025以下であることが求められる。
特許文献2に記載のカバーレイフィルムはこの要求を満たすことができるが、長期の保存性という点で問題があることが明らかになった。
The demand for high-frequency characteristics is becoming more and more demanding. The dielectric constant in the frequency range of 1 to 10 GHz is required to be 2.5 or less, and the dielectric loss tangent (tan δ) in the frequency range of 1 to 10 GHz is 0. .0025 or less.
Although the coverlay film described in Patent Document 2 can satisfy this requirement, it has become clear that there is a problem in terms of long-term storage.
特許文献2に記載のカバーレイフィルムでは、(E)成分の硬化剤として、カバーレイフィルムの加熱硬化をより低い温度(例えば、通常200℃で硬化させるものを150℃で硬化)で進行させることができる点でマレイミド系硬化剤が好ましいとされており、中でも、ビスマレイミドが誘電特性の保持、接着力付与及び高Tg(ガラス転移点)化の観点から好ましいとされている。
しかしながら、(E)成分の硬化剤として、ビスマレイミドを使用すると、長期の保存時に、フィルム中で結晶化が起こり、フィルムの外観が悪化する。
また、カバーレイフィルムの使用時には、基材付フィルムをFPC上に仮圧着した後、基材を剥がし、その後加熱硬化させるが、長期の保存時に、フィルム中でビスマレイミドの結晶化が経時的に進行すると、仮圧着性が低下するため問題となる。
In the coverlay film described in Patent Document 2, as the curing agent for the component (E), the heat curing of the coverlay film is allowed to proceed at a lower temperature (for example, what is usually cured at 200 ° C. is cured at 150 ° C.). In view of the above, maleimide-based curing agents are preferred, and among them, bismaleimide is preferred from the viewpoints of maintaining dielectric properties, imparting adhesive strength, and increasing Tg (glass transition point).
However, when bismaleimide is used as the curing agent for component (E), crystallization occurs in the film during long-term storage, and the appearance of the film deteriorates.
Also, when using the coverlay film, the film with the substrate is temporarily pressure-bonded on the FPC, and then the substrate is peeled off and then heated and cured. During long-term storage, the bismaleimide crystallizes over time. As it progresses, the provisional pressure-bonding property deteriorates, which causes a problem.
本発明は上記した従来技術の問題点を解決するため、FPCの配線をなす金属箔や、ポリイミドフィルム、液晶ポリマー等のFPCの基板材料に対して優れた接着強度を有し、かつ、高周波領域での電気特性、具体的には、周波数1〜10GHzの領域で低誘電率(ε)、および、低誘電正接(tanδ)を示し、かつ、シェルフライフが良好である絶縁フィルム、および、該絶縁フィルムの製造に用いる樹脂組成物を提供することを目的とする。 In order to solve the above-described problems of the prior art, the present invention has excellent adhesive strength for FPC substrate materials such as metal foil, polyimide film, liquid crystal polymer, etc., which form FPC wiring, and in a high frequency region. Insulating film exhibiting low dielectric constant (ε) and low dielectric loss tangent (tan δ) in a frequency range of 1 to 10 GHz, and having a good shelf life, and the insulation It aims at providing the resin composition used for manufacture of a film.
上記の目的を達成するため、本発明は、
(A)両末端にエチレン性不飽和基を有する変性ポリフェニレンエーテル、
(B)エポキシ樹脂、
(C)スチレン系熱可塑性エラストマー、
(D)1分子中にイミド基とアクリレート基とを有する化合物、および、
(E)硬化触媒
を含有し、前記成分(A)〜成分(E)の合計100質量部に対し、成分(A)を30〜50質量部、成分(B)を2〜15質量部、成分(C)を40〜60質量部、前記成分(D)を0.5〜4質量部含有することを特徴とする樹脂組成物を提供する。
In order to achieve the above object, the present invention provides:
(A) a modified polyphenylene ether having an ethylenically unsaturated group at both ends;
(B) epoxy resin,
(C) styrenic thermoplastic elastomer,
(D) a compound having an imide group and an acrylate group in one molecule, and
(E) A curing catalyst is contained, 30 to 50 parts by mass of component (A), 2 to 15 parts by mass of component (B), and 100 parts by mass of component (A) to component (E) in total. A resin composition comprising 40 to 60 parts by mass of (C) and 0.5 to 4 parts by mass of the component (D) is provided.
本発明の樹脂組成物において、前記(B)成分のエポキシ樹脂が、ナフタレン骨格を有するエポキシ樹脂であることが好ましい。 In the resin composition of the present invention, the epoxy resin as the component (B) is preferably an epoxy resin having a naphthalene skeleton.
本発明の樹脂組成物において、前記(E)成分の硬化触媒が、イミダゾール系硬化触媒であることが好ましい。
また、本発明の樹脂組成物において、前記(E)成分の硬化触媒が、ベンゼン環を有するイミダゾール系硬化触媒であることが好ましい。
In the resin composition of the present invention, the curing catalyst of the component (E) is preferably an imidazole curing catalyst.
In the resin composition of the present invention, the curing catalyst of the component (E) is preferably an imidazole curing catalyst having a benzene ring.
本発明の樹脂組成物は、さらに(F)有機過酸化物を含有してもよい。 The resin composition of the present invention may further contain (F) an organic peroxide.
本発明の樹脂組成物は、樹脂組成物の熱硬化物が、周波数1〜10GHzの領域での、誘電率(ε)が2.5以下であり、誘電正接(tanδ)が0.0025以下であることがより好ましい。
また、本発明は、本発明の樹脂組成物から形成される絶縁フィルムを提供する。
In the resin composition of the present invention, the thermoset of the resin composition has a dielectric constant (ε) of 2.5 or less and a dielectric loss tangent (tan δ) of 0.0025 or less in a frequency range of 1 to 10 GHz. More preferably.
Moreover, this invention provides the insulating film formed from the resin composition of this invention.
また、本発明は、基板間の層間接着に本発明の樹脂組成物が用いられる半導体装置を提供する。 The present invention also provides a semiconductor device in which the resin composition of the present invention is used for interlayer adhesion between substrates.
また、本発明は、基板間の層間接着に本発明の絶縁フィルムが用いられる半導体装置を提供する。 The present invention also provides a semiconductor device in which the insulating film of the present invention is used for interlayer adhesion between substrates.
本発明の樹脂組成物から形成される絶縁フィルムは、FPCの配線をなす金属箔や、ポリイミドフィルム、液晶ポリマーフィルム等のFPCの基板材料に対して優れた接着強度を有し、かつ、高周波領域での電気特性、具体的には、周波数1〜10GHzの領域で低誘電率(ε)、および、低誘電正接(tanδ)を示す。また、シェルフライフが良好であり、長期の保存時にも、フィルム中の成分の結晶化が起こりにくく、フィルムの外観の悪化や、フィルムの物性の悪化、具体的には、フィルムの仮圧着性の低下が起こりにくい。そのため、電気・電子用途の接着フィルムやプリント配線板のカバーレイフィルムに好適である。また、半導体装置の基板間の層間接着に好適である。 The insulating film formed from the resin composition of the present invention has excellent adhesive strength for FPC substrate materials such as metal foil, polyimide film, liquid crystal polymer film, etc. that form FPC wiring, and has a high frequency range. Electrical characteristics, specifically, a low dielectric constant (ε) and a low dielectric loss tangent (tan δ) in a frequency range of 1 to 10 GHz. In addition, the shelf life is good, and even during long-term storage, the components in the film are less likely to crystallize. Decline is unlikely to occur. Therefore, it is suitable for an adhesive film for electrical / electronic applications and a coverlay film for printed wiring boards. Further, it is suitable for interlayer adhesion between substrates of a semiconductor device.
以下、本発明の樹脂組成物について詳細に説明する。
本発明の樹脂組成物は、以下に示す成分(A)〜成分(E)を必須成分として含有する。
Hereinafter, the resin composition of the present invention will be described in detail.
The resin composition of the present invention contains the following components (A) to (E) as essential components.
(A)両末端にエチレン性不飽和基を有する変性ポリフェニレンエーテル
成分(A)の両末端にエチレン性不飽和基を有する変性ポリフェニレンエーテルにおける、エチレン性不飽和基としては、エテニル基、アリル基、メタリル基、プロペニル基、ブテニル基、ヘキセニル基、およびオクテニル基等のアルケニル基、シクロペンテニル基およびシクロヘキセニル基等のシクロアルケニル基、ビニルベンジル基およびビニルナフチル基等のアルケニルアリール基が挙げられ、ビニルベンジル基が好ましい。両末端の2つのエチレン性不飽和基は、同一の官能基であってもよいし、異なる官能基であってもよい。
(A) Modified polyphenylene ether having an ethylenically unsaturated group at both ends As the ethylenically unsaturated group in the modified polyphenylene ether having an ethylenically unsaturated group at both ends of the component (A), an ethenyl group, an allyl group, Alkenyl groups such as methallyl group, propenyl group, butenyl group, hexenyl group, and octenyl group; cycloalkenyl groups such as cyclopentenyl group and cyclohexenyl group; and alkenyl aryl groups such as vinylbenzyl group and vinylnaphthyl group. A benzyl group is preferred. The two ethylenically unsaturated groups at both ends may be the same functional group or different functional groups.
成分(A)の両末端にエチレン性不飽和基を有する変性ポリフェニレンエーテルとしては、下記一般式(1)で示される変性ポリフェニレンエーテルが好ましい。
式(1)中、−(O−X−O)−は、下記一般式(2)または(3)で表される。
In formula (1), — (O—X—O) — is represented by the following general formula (2) or (3).
式(2)中、R1,R2,R3,R7,R8は、同一または異なってもよく、炭素数6以下のアルキル基またはフェニル基である。R4,R5,R6は、同一または異なってもよく、水素原子、炭素数6以下のアルキル基またはフェニル基である。 In the formula (2), R 1 , R 2 , R 3 , R 7 and R 8 may be the same or different, and are an alkyl group or phenyl group having 6 or less carbon atoms. R 4 , R 5 and R 6 may be the same or different and are a hydrogen atom, an alkyl group having 6 or less carbon atoms, or a phenyl group.
式(3)中、R9,R10,R11,R12,R13,R14,R15,R16は、同一または異なってもよく、水素原子、炭素数6以下のアルキル基またはフェニル基である。−A−は、炭素数20以下の直鎖状、分岐状または環状の2価の炭化水素基である。 In the formula (3), R 9 , R 10 , R 11 , R 12 , R 13 , R 14 , R 15 and R 16 may be the same or different, and are a hydrogen atom, an alkyl group having 6 or less carbon atoms, or phenyl. It is a group. -A- is a linear, branched or cyclic divalent hydrocarbon group having 20 or less carbon atoms.
式(1)中、−(Y−O)−は、一般式(4)で表され、1種類の構造または2種類以上の構造がランダムに配列している。
式(4)中、R17,R18は、同一または異なってもよく、炭素数6以下のアルキル基またはフェニル基である。R19,R20は、同一または異なってもよく、水素原子、炭素数6以下のアルキル基またはフェニル基である。
In Formula (1),-(YO)-is represented by General Formula (4), and one type of structure or two or more types of structures are randomly arranged.
In the formula (4), R 17 and R 18 may be the same or different, and are an alkyl group or phenyl group having 6 or less carbon atoms. R 19 and R 20 may be the same or different and are a hydrogen atom, an alkyl group having 6 or less carbon atoms, or a phenyl group.
式(1)中、a,bは、少なくともいずれか一方が0でない、0〜100の整数を示す。 In formula (1), a and b represent an integer of 0 to 100, at least one of which is not 0.
式(3)における−A−としては、例えば、メチレン、エチリデン、1−メチルエチリデン、1,1−プロピリデン、1,4−フェニレンビス(1−メチルエチリデン)、1,3−フェニレンビス(1−メチルエチリデン)、シクロヘキシリデン、フェニルメチレン、ナフチルメチレン、1−フェニルエチリデン、等の2価の有機基が挙げられるが、これらに限定されるものではない。 Examples of -A- in formula (3) include methylene, ethylidene, 1-methylethylidene, 1,1-propylidene, 1,4-phenylenebis (1-methylethylidene), 1,3-phenylenebis (1- Examples thereof include, but are not limited to, divalent organic groups such as methylethylidene), cyclohexylidene, phenylmethylene, naphthylmethylene, and 1-phenylethylidene.
式(1)で示される変性ポリフェニレンエーテルとしては、R1,R2,R3,R7,R8,R17,R18が炭素数3以下のアルキル基であり、R4,R5,R6,R9,R10,R11,R12,R13,R14,R15,R16,R19,R20が水素原子または炭素数3以下のアルキル基であるものが好ましく、特に一般式(2)または一般式(3)で表される−(O−X−O)−が、一般式(5)、一般式(6)、または一般式(7)であり、一般式(4)で表される−(Y−O)−が、式(8)または式(9)であるか、あるいは式(8)と式(9)がランダムに配列した構造であることがより好ましい。 As the modified polyphenylene ether represented by the formula (1), R 1 , R 2 , R 3 , R 7 , R 8 , R 17 and R 18 are alkyl groups having 3 or less carbon atoms, and R 4 , R 5 , R 6 , R 9 , R 10 , R 11 , R 12 , R 13 , R 14 , R 15 , R 16 , R 19 , R 20 are preferably hydrogen atoms or alkyl groups having 3 or less carbon atoms, particularly -(O-X-O)-represented by the general formula (2) or the general formula (3) is the general formula (5), the general formula (6), or the general formula (7). It is more preferable that — (YO) — represented by 4) is the formula (8) or the formula (9), or a structure in which the formula (8) and the formula (9) are randomly arranged. .
式(1)で示される変性ポリフェニレンエーテルの製造方法は、特に限定されるものではなく、例えば、2官能フェノール化合物と1官能フェノール化合物を酸化カップリングさせて得られる2官能フェニレンエーテルオリゴマーの末端フェノール性水酸基をビニルベンジルエーテル化することで製造することができる。 The production method of the modified polyphenylene ether represented by the formula (1) is not particularly limited. For example, the terminal phenol of a bifunctional phenylene ether oligomer obtained by oxidative coupling of a bifunctional phenol compound and a monofunctional phenol compound. It can be produced by converting a functional hydroxyl group into vinylbenzyl ether.
成分(A)の両末端にエチレン性不飽和基を有する変性ポリフェニレンエーテルの数平均分子量は、GPC法によるポリスチレン換算で500〜4,500の範囲が好ましく、500〜3,000の範囲がより好ましく、さらに好ましくは1000〜2500の範囲である。数平均分子量が500以上であれば、本発明の樹脂組成物を塗膜状にした際にべたつき難く、また、4500以下であれば、溶剤への溶解性の低下を防止できる。 The number average molecular weight of the modified polyphenylene ether having an ethylenically unsaturated group at both ends of the component (A) is preferably in the range of 500 to 4,500, more preferably in the range of 500 to 3,000 in terms of polystyrene by GPC method. More preferably, it is the range of 1000-2500. If the number average molecular weight is 500 or more, it is difficult to stick when the resin composition of the present invention is formed into a coating, and if it is 4500 or less, a decrease in solubility in a solvent can be prevented.
成分(A)の両末端にエチレン性不飽和基を有する変性ポリフェニレンエーテルは、成分(A)〜成分(E)の合計100質量部に対し、30〜60質量部含まれることが好ましく、30〜50質量部含まれることがより好ましく、35〜45質量部含まれることがさらに好ましい。
成分(A)が少なすぎると、本発明の樹脂組成物を用いて形成される絶縁フィルムの成形性が悪化する上、所望の高周波特性が得られにくくなる。成分(A)が多すぎると相対的に成分(B)及び成分(C)の量が減少するため、本発明の樹脂組成物を用いて形成される絶縁フィルムの接着性が悪化する。また、成分(A)としては、高周波特性の観点から比誘電率が3.0以下のものを用いることが好ましい。
The modified polyphenylene ether having an ethylenically unsaturated group at both ends of the component (A) is preferably contained in an amount of 30 to 60 parts by mass with respect to 100 parts by mass in total of the components (A) to (E). More preferably, 50 parts by mass are contained, and still more preferably 35-45 parts by mass.
When there are too few components (A), the moldability of the insulating film formed using the resin composition of this invention will deteriorate, and it will become difficult to obtain a desired high frequency characteristic. When there are too many components (A), since the quantity of a component (B) and a component (C) will reduce relatively, the adhesiveness of the insulating film formed using the resin composition of this invention will deteriorate. Moreover, as a component (A), it is preferable to use a thing with a dielectric constant of 3.0 or less from a viewpoint of a high frequency characteristic.
(B)エポキシ樹脂
成分(B)のエポキシ樹脂としては、例えば、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、脂環式エポキシ樹脂、シロキサン型エポキシ樹脂、ビフェニル型エポキシ樹脂、グリシジルエステル型エポキシ樹脂、グリシジルアミン型エポキシ樹脂、ヒダントイン型エポキシ樹脂、およびナフタレン環含有エポキシ樹脂が挙げられる。エポキシ樹脂組成物において、ここで例示した
化合物は単独で用いられてもよいし、2つ以上のものが混合して用いられてもよい。なお、フィルムの成形性の観点から、成分(B)のエポキシ樹脂は液状であることが好ましい。
また、成分(B)のエポキシ樹脂は、ナフタレン骨格を有するエポキシ樹脂であることが、本発明の樹脂組成物を用いて形成される絶縁フィルムの接着性が向上するため好ましい。
(B) Epoxy resin As the epoxy resin of component (B), for example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, phenol novolac type epoxy resin, alicyclic epoxy resin, siloxane type epoxy resin, biphenyl type epoxy resin Glycidyl ester type epoxy resin, glycidyl amine type epoxy resin, hydantoin type epoxy resin, and naphthalene ring-containing epoxy resin. In the epoxy resin composition, the compounds exemplified here may be used alone or in combination of two or more. In addition, it is preferable that the epoxy resin of a component (B) is liquid from a viewpoint of the moldability of a film.
Moreover, since the epoxy resin of a component (B) is an epoxy resin which has a naphthalene skeleton, since the adhesiveness of the insulating film formed using the resin composition of this invention improves, it is preferable.
成分(B)のエポキシ樹脂は、成分(A)〜成分(E)の合計100質量部に対し、2〜15質量部含まれることが好ましく、4〜12質量部含まれることがより好ましく、6〜11質量部含まれることがさらに好ましい。
成分(B)が少なすぎると、本発明の樹脂組成物を用いて形成される絶縁フィルムの接着性が悪化する。成分(B)が多すぎると相対的に成分(A)及び成分(C)の量が減少するため、本発明の樹脂組成物を用いて形成される絶縁フィルムの成形性が悪化する、また、本発明の樹脂組成物を用いて形成される絶縁フィルムの高周波特性が悪化する。
The component (B) epoxy resin is preferably contained in an amount of 2 to 15 parts by weight, more preferably 4 to 12 parts by weight, based on a total of 100 parts by weight of the components (A) to (E). More preferably, it is contained in 11 parts by mass.
When there are too few components (B), the adhesiveness of the insulating film formed using the resin composition of this invention will deteriorate. If the amount of the component (B) is too large, the amount of the component (A) and the component (C) is relatively reduced, so that the moldability of the insulating film formed using the resin composition of the present invention is deteriorated. The high frequency characteristic of the insulating film formed using the resin composition of this invention deteriorates.
(C)スチレン系熱可塑性エラストマー
成分(C)のスチレン系熱可塑性エラストマーとは、スチレン、その同族体もしくはその類似体を含有する熱可塑性エラストマーをいう。成分(C)としては、例えば、ポリスチレン−ポリ(エチレン−エチレン/プロピレン)ブロック−ポリスチレン(SEEPS)、ポリスチレン−ポリ(エチレン/ブチレン)ブロック−ポリスチレン(SEBS)、スチレン−ブタジエンブロック共重合体(SBS)、スチレン−イソプレン−スチレンブロック共重合体(SIS)、およびポリブタジエン(PB)が挙げられる。ここで例示した化合物は単独で用いられてもよいし、2つ以上のものが混合して用いられてもよい。FPCの配線をなす金属箔や、ポリイミドフィルム、液晶ポリマー等のFPCの基板材料に対する接着強度向上の観点からは、成分(C)がSEEPSを含むことが好ましい。成分(C)中のSEEPSの量は、10〜70質量%であることが好ましく、10〜50質量%であることがより好ましい。また、耐熱性の観点からは、成分(C)がSEBSを含むことが好ましい。
(C) Styrenic thermoplastic elastomer The styrene thermoplastic elastomer of the component (C) refers to a thermoplastic elastomer containing styrene, a homologue thereof or an analogue thereof. Examples of the component (C) include polystyrene-poly (ethylene-ethylene / propylene) block-polystyrene (SEEPS), polystyrene-poly (ethylene / butylene) block-polystyrene (SEBS), and styrene-butadiene block copolymer (SBS). ), Styrene-isoprene-styrene block copolymer (SIS), and polybutadiene (PB). The compounds exemplified here may be used alone or in combination of two or more. From the viewpoint of improving the adhesive strength of the FPC substrate material such as a metal foil, a polyimide film, or a liquid crystal polymer that forms an FPC wiring, the component (C) preferably contains SEEPS. The amount of SEEPS in the component (C) is preferably 10 to 70% by mass, and more preferably 10 to 50% by mass. Moreover, it is preferable that a component (C) contains SEBS from a heat resistant viewpoint.
成分(C)のスチレン系熱可塑性エラストマーは、成分(A)〜成分(E)の合計100質量部に対し、30〜70質量部含まれることが好ましく、40〜60質量部含まれることがより好ましく、45〜55質量部含まれることがさらに好ましい。
成分(C)が多すぎると成形性が悪化する。成分(C)が少なすぎると接着強度が悪化し、さらに成形性も悪化する。また、成分(C)としては、高周波特性の観点から比誘電率が3.0以下のものを用いることが好ましい。
The styrene-based thermoplastic elastomer of component (C) is preferably contained in an amount of 30 to 70 parts by mass, more preferably 40 to 60 parts by mass with respect to 100 parts by mass in total of components (A) to (E). Preferably, 45 to 55 parts by mass are contained.
When there are too many components (C), a moldability will deteriorate. When there are too few components (C), adhesive strength will deteriorate and also a moldability will also deteriorate. Moreover, as a component (C), it is preferable to use a thing with a dielectric constant of 3.0 or less from a viewpoint of a high frequency characteristic.
(D)1分子中にイミド基とアクリレート基とを有する化合物
成分(D)は、本発明の樹脂組成物を用いて形成される絶縁フィルムの硬化を補助する成分である。上述したように、特許文献2に記載のカバーレイフィルムでは、(E)成分の硬化剤として、ビスマレイミドを使用するため、長期の保存時に、フィルム中で結晶化が起こり、フィルムの外観が悪化する、また、フィルム中でビスマレイミドの結晶化が経時的に進行することで、カバーレイフィルムの使用時に仮圧着性が低下するため問題があった。
これに対し、本発明の樹脂組成物は、成分(D)として、1分子中にイミド基とアクリレート基とを有する化合物を使用するため、樹脂組成物を用いて形成される絶縁フィルムの長期の保存時に、フィルム中の成分の結晶化が起こりにくく、フィルムの外観の悪化や、フィルムの物性の悪化、具体的には、フィルムの仮圧着性の低下が起こりにくい。フィルムの仮圧着性は、絶縁フィルムをカバーレイフィルムとして使用する場合に限らず、電気・電子用途の接着フィルムとして使用する場合や、半導体装置の基板間の層間接着に使用する場合にも要求される特性である。
成分(D)として使用する、1分子中にイミド基とアクリレート基とを有する化合物は、誘電特性の保持、接着力付与及び高Tg(ガラス転移点)化の観点においても、ビスマレイミドと遜色ない。
(D) Compound having an imide group and an acrylate group in one molecule Component (D) is a component that assists in curing an insulating film formed using the resin composition of the present invention. As described above, in the coverlay film described in Patent Document 2, since bismaleimide is used as the curing agent for the component (E), crystallization occurs in the film during long-term storage, and the appearance of the film deteriorates. In addition, since the crystallization of bismaleimide progresses with time in the film, there is a problem because the temporary press bonding property is lowered when the coverlay film is used.
On the other hand, since the resin composition of the present invention uses a compound having an imide group and an acrylate group in one molecule as the component (D), a long-term insulating film formed using the resin composition is used. During storage, the components in the film are hardly crystallized, and the appearance of the film is deteriorated, the physical properties of the film are deteriorated, specifically, the temporary press bonding property of the film is hardly deteriorated. Temporary pressure bonding of the film is required not only when the insulating film is used as a coverlay film, but also when used as an adhesive film for electrical and electronic applications or when used for interlayer adhesion between substrates of semiconductor devices. It is a characteristic.
A compound having an imide group and an acrylate group in one molecule used as the component (D) is comparable to bismaleimide in terms of maintaining dielectric properties, imparting adhesive force, and increasing Tg (glass transition point). .
成分(D)としては、イミドアクリレートが挙げられる。イミドアクリレートとしては、N−アクリロイルオキシエチルヘキサヒドロフタルイミド、N−アクリロイルオキシエチル−1,2,3,6−テトラヒドロフタルイミド、N−アクリロイルオキシエチル−3,4,5,6−テトラヒドロフタルイミドが挙げられ、特にN−アクリロイルオキシエチルヘキサヒドロフタルイミドが好ましい。 Examples of the component (D) include imide acrylate. Examples of the imide acrylate include N-acryloyloxyethyl hexahydrophthalimide, N-acryloyloxyethyl-1,2,3,6-tetrahydrophthalimide, and N-acryloyloxyethyl-3,4,5,6-tetrahydrophthalimide. In particular, N-acryloyloxyethyl hexahydrophthalimide is preferred.
成分(D)の含有量は、成分(A)〜成分(E)の合計100質量部に対し、0.5〜4質量部である。成分(D)の含有量が上記の範囲外の場合は、本発明の樹脂組成物を用いて形成される絶縁フィルムが所望の接着強度を得られない。
成分(D)の含有量は、成分(A)〜成分(E)の合計100質量部に対し、0.5〜3.0質量部であることが好ましく、0.5〜2.5質量部であることがより好ましい。
Content of a component (D) is 0.5-4 mass parts with respect to a total of 100 mass parts of a component (A) -component (E). When content of a component (D) is outside said range, the insulating film formed using the resin composition of this invention cannot obtain desired adhesive strength.
The content of the component (D) is preferably 0.5 to 3.0 parts by mass, and 0.5 to 2.5 parts by mass with respect to a total of 100 parts by mass of the components (A) to (E). It is more preferable that
(E)硬化触媒
成分(E)の硬化触媒は、本発明の樹脂組成物を用いて形成される絶縁フィルムの硬化、より具体的には、成分(B)のエポキシ樹脂の硬化反応を促進する触媒である。
成分(E)としては、例えば、イミダゾール系硬化触媒、アミン系硬化触媒、リン系硬化触媒等が挙げられる。イミダゾール系硬化触媒としては、2−メチルイミダゾール、2−ウンデシルイミダゾール、1−シアノエチル−2−ウンデシルイミダゾール、2−ヘプタデシルイミダゾール、2−エチル−4−メチルイミダゾール、1−シアノエチル−2−エチル−4−イミダゾール、2−フェニルイミダゾール、1−ベンジル−2−フェニルイミダゾール、2−フェニル−4−メチルイミダゾール等のイミダゾール化合物が挙げられる。中でも、2−エチル−4−メチルイミダゾール、1−シアノエチル−2−ウンデシルイミダゾール、および、1−シアノエチル−2−エチル−4−イミダゾールが好ましい。アミン系硬化触媒としては、2,4−ジアミノ−6−〔2’―メチルイミダゾリル−(1’)〕エチル−s−トリアジン等のトリアジン化合物、1,8−ジアザビシクロ[5,4,0]ウンデセン−7(DBU)、トリエチレンジアミン、ベンジルジメチルアミン、トリエタノールアミン等の第三級アミン化合物が挙げられる。中でも、2,4−ジアミノ−6−〔2’―メチルイミダゾリル−(1’)〕エチル−s−トリアジンが好ましい。また、リン系硬化触媒としては、トリフェニルホスフィン、トリブチルホスフィン、トリ(p−メチルフェニル)ホスフィン、トリ(ノニルフェニル)ホスフィン等が挙げられる。これらの中でもイミダゾール系硬化触媒が、適度な硬化性で調整できるため好ましい。さらに、ベンゼン環を有するイミダゾール系硬化触媒が、本発明の樹脂組成物を用いて形成される絶縁フィルムのシェルフライフを長くできるためより好ましい。このようなイミダゾール系硬化触媒としては、2−フェニルイミダゾール、1−ベンジル−2−フェニルイミダゾール、2−フェニル−4−メチルイミダゾールが挙げられ、特に1−ベンジル−2−フェニルイミダゾールが好ましい。
(E) Curing catalyst The curing catalyst of component (E) accelerates the curing of the insulating film formed by using the resin composition of the present invention, more specifically, the curing reaction of the epoxy resin of component (B). It is a catalyst.
Examples of the component (E) include an imidazole curing catalyst, an amine curing catalyst, and a phosphorus curing catalyst. Examples of imidazole-based curing catalysts include 2-methylimidazole, 2-undecylimidazole, 1-cyanoethyl-2-undecylimidazole, 2-heptadecylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-ethyl. Examples include imidazole compounds such as -4-imidazole, 2-phenylimidazole, 1-benzyl-2-phenylimidazole, and 2-phenyl-4-methylimidazole. Of these, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-undecylimidazole, and 1-cyanoethyl-2-ethyl-4-imidazole are preferable. Examples of amine-based curing catalysts include triazine compounds such as 2,4-diamino-6- [2′-methylimidazolyl- (1 ′)] ethyl-s-triazine, 1,8-diazabicyclo [5,4,0] undecene. And tertiary amine compounds such as -7 (DBU), triethylenediamine, benzyldimethylamine, and triethanolamine. Among these, 2,4-diamino-6- [2′-methylimidazolyl- (1 ′)] ethyl-s-triazine is preferable. Examples of the phosphorus curing catalyst include triphenylphosphine, tributylphosphine, tri (p-methylphenyl) phosphine, and tri (nonylphenyl) phosphine. Among these, an imidazole-based curing catalyst is preferable because it can be adjusted with appropriate curability. Furthermore, an imidazole-based curing catalyst having a benzene ring is more preferable because the shelf life of an insulating film formed using the resin composition of the present invention can be increased. Examples of such an imidazole-based curing catalyst include 2-phenylimidazole, 1-benzyl-2-phenylimidazole, and 2-phenyl-4-methylimidazole, and 1-benzyl-2-phenylimidazole is particularly preferable.
成分(E)の含有量は、成分(E)として使用する硬化触媒の種類に応じて適宜選択する。成分(E)としてイミダゾール系硬化触媒を使用する場合は、成分(B)のエポキシ樹脂100質量部に対して0.01〜20質量部であることが好ましく、0.1〜15質量部であることがより好ましく、1〜10質量部であることがさらに好ましい。
成分(E)の含有量が少なすぎると硬化性が悪化する。一方、成分(E)の含有量が多すぎると絶縁フィルムのシェルフライフが悪化する問題がある。
Content of a component (E) is suitably selected according to the kind of curing catalyst used as a component (E). When using an imidazole-type curing catalyst as a component (E), it is preferable that it is 0.01-20 mass parts with respect to 100 mass parts of epoxy resins of a component (B), and is 0.1-15 mass parts. More preferably, the amount is 1 to 10 parts by mass.
When there is too little content of a component (E), sclerosis | hardenability will deteriorate. On the other hand, when there is too much content of a component (E), there exists a problem which the shelf life of an insulating film deteriorates.
本発明の樹脂組成物は、上記成分(A)〜成分(E)以外に、以下に述べる成分を必要に応じて含有してもよい。 The resin composition of this invention may contain the component described below as needed other than the said component (A)-component (E).
(F)有機過酸化物
成分(F)の有機過酸化物としては、例えば、t−ブチルパーオキシベンゾエート、t−ブチルパーオキシイソプロピルカーボネート、t−ブチルパーオキシ−2−エチルヘキシルカーボネート、t−ブチルパーオキシアセテート、ジクミルパーオキサイド、2,5−ジメチル−2,5−ジ(t−ブチルパーオキシ)ヘキサン、ジ−t−ブチルパーオキサイド、2,5−ジメチル−2,5−ジ(t−ブチルパーオキシ)ヘキシン−3、1,1−ジ(t−ブチルパーオキシ)−3,3,5−トリメチルシクロヘキサン、1,1−ジ(t−ブチルパーオキシ)シクロヘキサン、メチルエチルケトンパーオキサイド、2,5−ジメチルヘキシル−2,5−ジパーオキシベンゾエート、t−ブチルハイドロパーオキサイド、p−メンタンハイドロパーオキサイド、ベンゾイルパーオキサイド、p−クロルベンゾイルパーオキサイド、t−ブチルパーオキシイソブチレート、ヒドロキシヘプチルパーオキサイド、ジクロヘキサノンパーオキサイドなどが挙げられる。成分(F)の有機過酸化物を添加することにより、成分(A)の硬化反応を促進することができ、反応性を安定させることができる。
本発明の樹脂組成物をフィルム化して使用することを考慮すると、成分(F)としては、フィルム化の乾燥工程の60〜120℃の温度域では活性化せず、それ以上の温度域で活性化するものが好ましい。そのような成分(F)としては、t−ブチルパーオキシベンゾエートが挙げられる。
(F) Organic peroxide Examples of the organic peroxide of component (F) include t-butyl peroxybenzoate, t-butyl peroxyisopropyl carbonate, t-butyl peroxy-2-ethylhexyl carbonate, and t-butyl. Peroxyacetate, dicumyl peroxide, 2,5-dimethyl-2,5-di (t-butylperoxy) hexane, di-t-butyl peroxide, 2,5-dimethyl-2,5-di (t -Butylperoxy) hexyne-3,1,1-di (t-butylperoxy) -3,3,5-trimethylcyclohexane, 1,1-di (t-butylperoxy) cyclohexane, methyl ethyl ketone peroxide, 2 , 5-Dimethylhexyl-2,5-diperoxybenzoate, t-butyl hydroperoxide, p-me Nthane hydroperoxide, benzoyl peroxide, p-chlorobenzoyl peroxide, t-butyl peroxyisobutyrate, hydroxyheptyl peroxide, dichlorohexanone peroxide and the like. By adding the organic peroxide of component (F), the curing reaction of component (A) can be promoted, and the reactivity can be stabilized.
Considering that the resin composition of the present invention is used in the form of a film, the component (F) is not activated in the temperature range of 60 to 120 ° C. in the drying step of film formation, and is active in a temperature range higher than that. It is preferable that Examples of such component (F) include t-butyl peroxybenzoate.
(その他の配合剤)
本発明の樹脂材組成物は、上記成分(A)〜成分(F)以外の成分を必要に応じてさらに含有してもよい。このような成分の具体例としては、シランカップリング剤、消泡剤、流動調整剤、成膜補助剤、分散剤、無機粒子などを配合することができる。各配合剤の種類、配合量は常法通りである。
(Other ingredients)
The resin material composition of this invention may further contain components other than the said component (A)-component (F) as needed. Specific examples of such components include silane coupling agents, antifoaming agents, flow control agents, film forming aids, dispersants, inorganic particles, and the like. The type and amount of each compounding agent are as usual.
一方、本発明の樹脂組成物を用いて形成される絶縁フィルムの高周波特性に悪影響を及ぼす成分は含有しないことが好ましい。このような成分としては、液状ゴム、難燃剤等が挙げられる。 On the other hand, it is preferable not to contain a component that adversely affects the high-frequency characteristics of the insulating film formed using the resin composition of the present invention. Examples of such components include liquid rubber and flame retardant.
(樹脂組成物の調製)
本発明の樹脂組成物は、慣用の方法により製造することができる。例えば、溶剤の存在下で、上記成分(A)〜成分(D)(他の任意成分を含有する場合はさらにこれらの任意成分)を加熱混合ニーダーにより混合する(回転数100〜1000rpm、80℃、3時間)。
これを冷却した後、さらに成分(E)(樹脂組成物が成分(F)を含む場合はさらに成分(F))を加え、30〜60分間常温で攪拌することができる。
(Preparation of resin composition)
The resin composition of the present invention can be produced by a conventional method. For example, in the presence of a solvent, the above components (A) to (D) (if any other optional components are included, these optional components are further mixed) by a heat mixing kneader (rotation speed: 100 to 1000 rpm, 80 ° C. 3 hours).
After cooling this, component (E) (or further component (F) when the resin composition contains component (F)) can be added and stirred at room temperature for 30 to 60 minutes.
本発明の樹脂組成物は、以下に示す好適な特性を有している。 The resin composition of the present invention has suitable characteristics shown below.
本発明の樹脂組成物は、その熱硬化物が高周波での電気特性に優れている。具体的には、樹脂組成物の熱硬化物は、周波数1〜10GHzの領域での誘電率(ε)が2.5以下であることが好ましく、2.4以下であることがより好ましい。また、周波数1〜10GHzの領域での誘電正接(tanδ)が0.0025以下であることがより好ましく、0.0022以下であることがより好ましい。
周波数1〜10GHzの領域での誘電率(ε)および誘電正接(tanδ)が上記の範囲であることにより、周波数1〜10GHzの領域での電気信号損失を低減することができる。
As for the resin composition of this invention, the thermosetting material is excellent in the electrical property in a high frequency. Specifically, the thermosetting product of the resin composition preferably has a dielectric constant (ε) of 2.5 or less, more preferably 2.4 or less in a frequency range of 1 to 10 GHz. Further, the dielectric loss tangent (tan δ) in the frequency region of 1 to 10 GHz is more preferably 0.0025 or less, and more preferably 0.0022 or less.
When the dielectric constant (ε) and the dielectric loss tangent (tan δ) in the frequency range of 1 to 10 GHz are in the above ranges, the electric signal loss in the frequency range of 1 to 10 GHz can be reduced.
本発明の樹脂組成物は、本発明の樹脂組成物は、その熱硬化物が十分な接着強度を有している。具体的には、樹脂組成物の熱硬化物は、JIS K6854−2に準拠して測定した銅箔粗化面に対するピール強度(180度ピール)が7N/cm以上あることが好ましく、より好ましくは8N/cm以上である。
また、JIS K6854−1に準拠して測定した液晶ポリマーフィルムに対するピール強度(90度ピール)が6N/cm以上あることが好ましく、より好ましくは7N/cm以上である。
In the resin composition of the present invention, the thermosetting product of the resin composition of the present invention has sufficient adhesive strength. Specifically, the thermoset of the resin composition preferably has a peel strength (180 degree peel) with respect to the roughened copper foil surface measured according to JIS K6854-2 of 7 N / cm or more, more preferably. 8 N / cm or more.
Moreover, it is preferable that the peel strength (90 degree | times peel) with respect to the liquid crystal polymer film measured based on JISK6854-1 is 6 N / cm or more, More preferably, it is 7 N / cm or more.
本発明の絶縁フィルムは、本発明の樹脂組成物から公知の方法により得ることができる。例えば、本発明の樹脂組成物を溶剤で希釈してワニスとし、これを支持体の少なくとも片面に塗布し、乾燥させた後、支持体付のフィルム、または、支持体から剥離したフィルムとして提供することができる。 The insulating film of the present invention can be obtained from the resin composition of the present invention by a known method. For example, the resin composition of the present invention is diluted with a solvent to obtain a varnish, which is applied to at least one side of a support and dried, and then provided as a film with a support or a film peeled from the support. be able to.
ワニスとして使用可能な溶剤としては、メチルエチルケトン、メチルイソブチルケトン等のケトン類;トルエン、キシレン等の芳香族溶剤;ジオクチルフタレート、ジブチルフタレート等の高沸点溶剤等が挙げられる。溶剤の使用量は特に限定されず、従来から使用されている量とすることができるが、好ましくは、固形分に対して20〜90質量%である。 Examples of the solvent that can be used as the varnish include ketones such as methyl ethyl ketone and methyl isobutyl ketone; aromatic solvents such as toluene and xylene; high-boiling solvents such as dioctyl phthalate and dibutyl phthalate. Although the usage-amount of a solvent is not specifically limited, Although it can be set as the quantity conventionally used, Preferably, it is 20-90 mass% with respect to solid content.
支持体は、フィルムの製造方法における所望の形態により適宜選択され、特に限定されないが、例えば、銅、アルミニウム等の金属箔、ポリエステル、ポリエチレン等の樹脂のキャリアフィルム等が挙げられる。本発明の絶縁フィルムを、支持体から剥離したフィルムの形態として提供する場合、支持体は、シリコーン化合物等で離型処理されていることが好ましい。 The support is appropriately selected depending on the desired form in the film production method, and is not particularly limited, and examples thereof include metal foils such as copper and aluminum, carrier films of resins such as polyester and polyethylene, and the like. When the insulating film of the present invention is provided in the form of a film peeled from the support, the support is preferably subjected to a release treatment with a silicone compound or the like.
ワニスを塗布する方法は、特に限定されないが、例えば、スロットダイ方式、グラビア方式、ドクターコーター方式等が挙げられ、所望のフィルムの厚みなどに応じて適宜選択されるが、特に、グラビア方式がフィルムの厚みを薄く設計しうることから好ましい。塗布は、乾燥後に形成されるフィルムの厚みが、所望の厚みになるように行われる。このような厚みは、当業者であれば、溶剤含有量から導くことができる。 The method for applying the varnish is not particularly limited, and examples thereof include a slot die method, a gravure method, a doctor coater method, and the like, which are appropriately selected according to a desired film thickness and the like. This is preferable because it can be designed to be thin. Application | coating is performed so that the thickness of the film formed after drying may turn into desired thickness. Such a thickness can be derived from the solvent content by those skilled in the art.
本発明の絶縁フィルムの厚みは、用途に応じて要求される機械的強度などの特性に基づいて適宜設計されるが、一般に1〜100μmであり、薄膜化が要求される場合、1〜30μmであることが好ましい。 The thickness of the insulating film of the present invention is appropriately designed based on properties such as mechanical strength required according to the application, but is generally 1 to 100 μm, and 1 to 30 μm when thinning is required. Preferably there is.
乾燥の条件は、ワニスに使用される溶剤の種類や量、ワニスの使用量や塗布の厚みなどに応じて適宜設計され、特に限定されるものではないが、例えば、60〜100℃であり、大気圧下で行うことができる。 The drying conditions are appropriately designed according to the type and amount of the solvent used in the varnish, the amount of varnish used, the thickness of the coating, etc., and are not particularly limited, for example, 60 to 100 ° C., It can be performed under atmospheric pressure.
本発明の絶縁フィルムは、シェルフライフが良好であり、長期の保存時にも、フィルム中の成分の結晶化による、フィルムの外観の悪化が起こりにくい。
また、長期の保存時にも、後述する手順で測定される、フィルムの仮圧着性の低下が起こりにくい。
The insulating film of the present invention has a good shelf life, and the appearance of the film is hardly deteriorated due to crystallization of components in the film even during long-term storage.
Further, even during long-term storage, the temporary press-bonding property of the film, which is measured by the procedure described later, is unlikely to decrease.
本発明の絶縁フィルムを、電気・電子用途の接着フィルムとして使用する場合、その使用手順は以下の通り。
本発明の絶縁フィルムを用いて接着する対象物のうち、一方の対象物の被接着面に本発明の絶縁フィルムを載置した後、もう一方の対象物をその被接着面が絶縁フィルムの露出面と接するように載置する。ここで、支持体付の絶縁フィルムを用いる場合、絶縁フィルムの露出面が一方の対象物の被接着面に接するように絶縁フィルムを載置して、被着面上に該絶縁フィルムを仮圧着する。ここで、仮圧着時の温度は例えば130℃とすることができる。
次に、仮圧着後に支持体を剥離することによって露出した絶縁フィルムの面上にもう一方の対象物をその被接着面が絶縁フィルムの露出面と接するように載置する。これらの手順を実施した後、所定温度及び所定時間熱圧着させ、その後、加熱硬化させる。なお、熱圧着工程は省略しても良い。
熱圧着時の温度は好ましくは100〜150℃である。熱圧着の時間は好ましくは0.5〜10分である。
加熱硬化の温度は、好ましくは150〜200℃である。加熱硬化時間は、好ましくは30〜120分である。
なお、予めフィルム化したものを使用する代わりに、本発明の樹脂組成物を溶剤で希釈したワニスを、一方の接着対象物の被接着面に塗布し、乾燥させた後に、上記した一方の対象物を載置する手順を実施してもよい。
When the insulating film of the present invention is used as an adhesive film for electrical / electronic applications, the procedure for use is as follows.
Among the objects to be bonded using the insulating film of the present invention, after mounting the insulating film of the present invention on the bonded surface of one target object, the bonded surface of the other object is exposed of the insulating film. Place it in contact with the surface. Here, when using an insulating film with a support, place the insulating film so that the exposed surface of the insulating film is in contact with the adherend surface of one object, and temporarily press the insulating film onto the adherend surface. To do. Here, the temperature at the time of temporary pressure bonding can be set to 130 ° C., for example.
Next, the other object is placed on the surface of the insulating film exposed by peeling off the support after temporary pressure bonding so that the surface to be bonded is in contact with the exposed surface of the insulating film. After performing these procedures, thermocompression bonding is performed for a predetermined temperature and for a predetermined time, and then heat-cured. The thermocompression bonding process may be omitted.
The temperature during thermocompression bonding is preferably 100 to 150 ° C. The time for thermocompression bonding is preferably 0.5 to 10 minutes.
The temperature for heat curing is preferably 150 to 200 ° C. The heat curing time is preferably 30 to 120 minutes.
Instead of using a pre-filmed one, the varnish obtained by diluting the resin composition of the present invention with a solvent is applied to the adherend surface of one object to be bonded and dried, and then the one object described above is used. You may implement the procedure which mounts an object.
本発明の絶縁フィルムをカバーレイフィルムとして使用する場合、その使用手順は以下の通り。
本発明の絶縁フィルムを、主面に配線パターンが形成された配線付樹脂基板の所定の位置、すなわち、配線パターンが形成された側の、絶縁フィルムで被覆する位置に、該カバーレイフィルムを配置した後、所定温度及び所定時間仮圧着、熱圧着、加熱硬化させればよい。なお、熱圧着工程は省略しても良い。仮圧着、熱圧着、加熱硬化の温度と時間は、上記電気・電子用途の接着フィルムとして使用する場合と同様である。
When the insulating film of the present invention is used as a coverlay film, the usage procedure is as follows.
The cover lay film is disposed at a predetermined position on the resin substrate with wiring having a wiring pattern formed on the main surface, that is, at a position where the insulating film of the present invention is covered with the insulating film on the side on which the wiring pattern is formed. After that, temporary pressing, thermocompression bonding, and heat curing may be performed for a predetermined temperature and a predetermined time. The thermocompression bonding process may be omitted. The temperature and time for temporary pressure bonding, thermocompression bonding, and heat curing are the same as in the case of using as an adhesive film for the electrical / electronic applications.
本発明の絶縁フィルムは、半導体装置の基板間の層間接着にも使用できる。この場合、上記した接着する対象物が、半導体装置を構成する、互いに複数層積層された複数の基板となる。なお、半導体装置の基板間の層間接着についても、予めフィルム化したものを使用する代わりに、本発明の樹脂組成物を溶剤で希釈したワニスを使用してもよい。 The insulating film of the present invention can be used for interlayer adhesion between substrates of a semiconductor device. In this case, the above-described object to be bonded becomes a plurality of substrates that are stacked in a plurality of layers that constitute the semiconductor device. For interlayer adhesion between the substrates of the semiconductor device, a varnish obtained by diluting the resin composition of the present invention with a solvent may be used instead of using a film formed in advance.
半導体装置を構成する基板は特に限定されず、エポキシ樹脂、フェノール樹脂、ビスマレイミドトリアジン樹脂等の有機基板や、CCL基板、セラミック基板やシリコン基板等の無機基板のいずれも使用できる。 The substrate constituting the semiconductor device is not particularly limited, and any of an organic substrate such as an epoxy resin, a phenol resin, and a bismaleimide triazine resin, and an inorganic substrate such as a CCL substrate, a ceramic substrate, and a silicon substrate can be used.
以下、実施例により、本発明を詳細に説明するが、本発明はこれらに限定されるものではない。 EXAMPLES Hereinafter, although an Example demonstrates this invention in detail, this invention is not limited to these.
(実施例1〜10、比較例1〜5)
サンプル作製と測定方法
各成分を下記表に示す配合割合(質量部)になるように、計量配合した後、それらを80℃に加温された反応釜に投入し、回転数250rpmで回転させながら、常圧混合を3時間行った。但し、成分(E)の硬化触媒、および、成分(F)の有機過酸化物は、冷却後に加えた。
このようにして得られた樹脂組成物を含むワニスを支持体(離型処理をほどこしたPETフィルム)の片面に塗布し、100℃(成分(F)の有機過酸化物を含む場合は80℃)で乾燥させることにより、支持体付の絶縁フィルムを得た。
なお、表中の略号はそれぞれ以下を表わす。
成分(A)
OPE2200:オリゴフェニレンエーテル(上記一般式(1)で示される変性ポリフェニレンエーテル(式(1)中の−(O−X−O)−が一般式(5)であり、式(1)中の−(Y−O)−が式(8)である)(Mn=2200)、三菱瓦斯化学株式会社製
成分(B)
NC3000H:ビフェニル型エポキシ樹脂、日本化薬株式会社製
828:ビスフェノールA型エポキシ樹脂、三菱化学株式会社製
HP4032D:ナフタレン型エポキシ樹脂、DIC株式会社製
成分(C)
タフテックH1052:ポリスチレン−ポリ(エチレン/ブチレン)ブロック−ポリスチレン(SEBS))、旭化成ケミカルズ株式会社製
セプトン4044:ポリスチレン−ポリ(エチレン−エチレン/プロピレン)ブロック−ポリスチレン(SEEPS)、株式会社クラレ製
成分(D)
M−140:イミドアクリレート(N−アクリロイルオキシエチルヘキサヒドロフタルイミド)、東亞合成株式会社製
成分(D´)
BMI−70:ビスマレイミド、ケイ・アイ化成株式会社製
M−5300:モノアクリレート(ω−カルボキシ−ポリカプロラクトンモノアクリレート)、東亞合成株式会社
成分(E)
2E4MZ:2−エチル−4−メチルイミダゾール、四国化成工業株式会社製
1B2PZ:1−ベンジル−2−フェニルイミダゾール、四国化成工業株式会社製
成分(F)
パーブチルZ:tert−ブチルパーオキシベンゾエート、日油株式会社製
その他の成分
KBM403:シランカップリング剤、信越化学工業株式会社製
(Examples 1-10, Comparative Examples 1-5)
Sample preparation and measurement method Each component was metered and blended so as to have the blending ratio (parts by mass) shown in the following table, and then charged into a reaction kettle heated to 80 ° C., while rotating at a rotational speed of 250 rpm. Normal pressure mixing was performed for 3 hours. However, the curing catalyst of component (E) and the organic peroxide of component (F) were added after cooling.
The varnish containing the resin composition thus obtained is applied to one side of a support (PET film which has been subjected to a release treatment), and 100 ° C. (80 ° C. in the case of containing an organic peroxide of component (F)). ) To obtain an insulating film with a support.
In addition, the symbol in a table | surface represents the following, respectively.
Ingredient (A)
OPE2200: oligophenylene ether (modified polyphenylene ether represented by the above general formula (1) (-(O—X—O) — in the formula (1) is the general formula (5), and − in the formula (1) (YO)-is the formula (8)) (Mn = 2200), manufactured by Mitsubishi Gas Chemical Company, Inc.
Ingredient (B)
NC3000H: biphenyl type epoxy resin, Nippon Kayaku Co., Ltd. 828: bisphenol A type epoxy resin, Mitsubishi Chemical Corporation HP4032D: naphthalene type epoxy resin, manufactured by DIC Corporation
Ingredient (C)
Tuftec H1052: Polystyrene-poly (ethylene / butylene) block-polystyrene (SEBS)), Septon 4044 manufactured by Asahi Kasei Chemicals Corporation: Polystyrene-poly (ethylene-ethylene / propylene) block-polystyrene (SEEPS), manufactured by Kuraray Co., Ltd.
Ingredient (D)
M-140: Imido acrylate (N-acryloyloxyethyl hexahydrophthalimide), manufactured by Toagosei Co., Ltd.
Ingredient (D ')
BMI-70: Bismaleimide, manufactured by Kay Kasei Co., Ltd. M-5300: Monoacrylate (ω-carboxy-polycaprolactone monoacrylate), Toagosei Co., Ltd.
Ingredient (E)
2E4MZ: 2-ethyl-4-methylimidazole, manufactured by Shikoku Chemicals Co., Ltd. 1B2PZ: 1-benzyl-2-phenylimidazole, manufactured by Shikoku Chemicals Co., Ltd.
Ingredient (F)
Perbutyl Z: tert-butyl peroxybenzoate, manufactured by NOF Corporation
Other components KBM403: Silane coupling agent, manufactured by Shin-Etsu Chemical Co., Ltd.
誘電率(ε)、誘電正接(tanδ):絶縁フィルムを200℃((成分(F)の有機過酸化物を含む場合は180℃))で加熱硬化させ、支持体から剥離した後、該絶縁フィルムから試験片(40±0.5mm×100±2mm)を切り出し、厚みを測定した。試験片を長さ100mm、直径2mm以下の筒状に丸めて、空洞共振器摂動法(10GHz)にて、誘電率(ε)および誘電正接(tanδ)を測定した。
ピール強度(Cu):支持体からはがした絶縁フィルムの両面に、粗化面を内側にした銅箔(CF−T8、福田金属箔粉工業株式会社製、厚さ18μm)を貼り合わせ、プレス機で加熱硬化させた(200℃、60min、10kgf、成分(F)の有機過酸化物を含む場合は180℃、60min、10kgf)。この試験片を10mm幅でカットし、オートグラフで引きはがして、JIS K6854−2に準拠してピール強度(180度ピール)を測定した。
ピール強度(LCP):支持体からはがした絶縁フィルムの片面に、液晶ポリマー(LCP)フィルム(ベクスターCT−Z、株式会社クラレ製、25μm)を貼り合わせ、絶縁フィルムの他方の片面にFR4基板を貼り合わせ、200℃、60min、10kgf(成分(F)の有機過酸化物を含む場合は180℃、60min、10kgf)加熱硬化させた後、JIS K6854−1に準拠してオートグラフで引きはがして、ピール強度(90度ピール)を測定した。
仮圧着性:上記の手順で作製した支持体付の絶縁フィルムをロールラミネーターにて130℃で液晶ポリマー(LCP)フィルム(ベクスターCT−Z、株式会社クラレ製、25μm)にラミネートした。ラミネート後に支持体をはがし、その後、この絶縁フィルムでラミネートしたLCPフィルムを折り曲げた。折り曲げた際、フィルム同士の剥離が無い場合を○とし、フィルム同士の剥離が有る場合を×とした。同様の手順を、作製後、3カ月間、常温大気雰囲気下で保管した支持体付の絶縁フィルムについても実施した。
Dielectric constant (ε), dielectric loss tangent (tan δ): The insulating film is heated and cured at 200 ° C. ((180 ° C. when the organic peroxide of component (F) is included)), peeled from the support, and then the insulating film A test piece (40 ± 0.5 mm × 100 ± 2 mm) was cut out from the film, and the thickness was measured. The test piece was rolled into a cylindrical shape having a length of 100 mm and a diameter of 2 mm or less, and a dielectric constant (ε) and a dielectric loss tangent (tan δ) were measured by a cavity resonator perturbation method (10 GHz).
Peel strength (Cu): A copper foil (CF-T8, manufactured by Fukuda Metal Foil Co., Ltd., thickness 18 μm) with the roughened surface inside is bonded to both sides of the insulating film peeled off from the support, and pressed. It was heat-cured with a machine (200 ° C., 60 min, 10 kgf, 180 ° C., 60 min, 10 kgf when containing an organic peroxide of component (F)). This test piece was cut to a width of 10 mm, peeled off by an autograph, and peel strength (180 degree peel) was measured according to JIS K6854-2.
Peel strength (LCP): A liquid crystal polymer (LCP) film (Bexter CT-Z, manufactured by Kuraray Co., Ltd., 25 μm) is bonded to one side of an insulating film peeled off from a support, and an FR4 substrate is attached to the other side of the insulating film. After being cured by heating and curing at 200 ° C., 60 min, 10 kgf (180 ° C., 60 min, 10 kgf if component (F) organic peroxide is included), it is peeled off by an autograph in accordance with JIS K6854-1. The peel strength (90 degree peel) was measured.
Temporary pressure bonding property: The insulating film with a support produced by the above procedure was laminated on a liquid crystal polymer (LCP) film (Bexter CT-Z, manufactured by Kuraray Co., Ltd., 25 μm) at 130 ° C. with a roll laminator. After lamination, the support was peeled off, and then the LCP film laminated with this insulating film was folded. When the film was folded, the case where there was no peeling between the films was rated as “◯”, and the case where there was peeling between the films was marked as “X”. The same procedure was performed on an insulating film with a support that was stored in a room temperature air atmosphere for 3 months after the production.
実施例1〜10は、高周波の電気特性(誘電率(ε)、誘電正接(tanδ))、ピール強度、仮圧着性のいずれも優れていた。実施例1に対し、実施例2〜10の相違点は以下の通り。
実施例2:成分(F)を含まない。
実施例3、4:成分(F)を含まない、成分(D)の含有量が異なる。
実施例5、6:成分(B)のエポキシ樹脂の種類が異なる、成分(C)の熱可塑性エラストマーの配合割合が異なる、成分(D)の含有量が異なる、成分(E)の硬化触媒の種類が異なる、その他の成分としてシランカップリング剤を添加。
実施例7:成分(D)の含有量が異なる、成分(E)の硬化触媒の種類が異なる、成分(F)を含まない、その他の成分としてシランカップリング剤を添加。
実施例8:成分(E)の硬化触媒の種類が異なる、その他の成分としてシランカップリング剤を添加。
実施例9:成分(B)のエポキシ樹脂の種類が異なる、成分(E)の硬化触媒の種類が異なる、その他の成分としてシランカップリング剤を添加。
実施例10:成分(E)の硬化触媒の種類が異なる、成分(F)を含まない。
成分(D)のイミドアクリレートの代わりに、ビスマレイミドを使用した比較例1、2は、3カ月後の仮圧着性が劣っていた。ビスマレイミドの含有量が高い比較例1は、高周波の電気特性のうち、誘電正接(tanδ)が劣っていた。
成分(D)のイミドアクリレートの代わりに、モノアクリレートを使用した比較例3は、LCPフィルムに対するピール強度が低かった。また、高周波の電気特性のうち、誘電正接(tanδ)が劣っていた。3カ月後の仮圧着性が劣っていた。
成分(D)を含まない比較例4は、LCPフィルムに対するピール強度が低かった。
成分(D)の含有量が多すぎる比較例5は、LCPフィルムに対するピール強度が低かった。
Examples 1 to 10 were excellent in high-frequency electrical characteristics (dielectric constant (ε), dielectric loss tangent (tan δ)), peel strength, and temporary press bonding properties. The differences between Example 1 and Example 2-10 are as follows.
Example 2: It does not contain a component (F).
Examples 3 and 4: The component (D) content is different, not including the component (F).
Examples 5 and 6: Different types of epoxy resins as component (B), different blending ratios of thermoplastic elastomer as component (C), different contents of component (D), curing catalyst as component (E) A silane coupling agent is added as another component of different types.
Example 7: The content of the component (D) is different, the type of the curing catalyst of the component (E) is different, the component (F) is not included, and a silane coupling agent is added as the other component.
Example 8: A silane coupling agent is added as another component in which the type of the curing catalyst of component (E) is different.
Example 9: Different types of epoxy resin as component (B), different types of curing catalyst as component (E), and silane coupling agent added as other components.
Example 10: The type of the curing catalyst of the component (E) is different, and the component (F) is not included.
In Comparative Examples 1 and 2 using bismaleimide instead of the imide acrylate of component (D), the temporary press bonding property after 3 months was inferior. Comparative Example 1 having a high bismaleimide content was inferior in dielectric loss tangent (tan δ) among high-frequency electrical characteristics.
In Comparative Example 3 using monoacrylate instead of the imide acrylate of component (D), the peel strength against the LCP film was low. Moreover, the dielectric loss tangent (tan δ) is inferior among the high frequency electrical characteristics. The temporary press bonding property after 3 months was inferior.
The comparative example 4 which does not contain a component (D) had low peel strength with respect to an LCP film.
In Comparative Example 5 in which the content of the component (D) is too large, the peel strength with respect to the LCP film was low.
Claims (9)
(B)エポキシ樹脂、
(C)スチレン系熱可塑性エラストマー、
(D)1分子中にイミド基とアクリレート基とを有する化合物、および、
(E)硬化触媒
を含有し、前記成分(A)〜成分(E)の合計100質量部に対し、成分(A)を30〜50質量部、成分(B)を2〜15質量部、成分(C)を40〜60質量部、前記成分(D)を0.5〜4質量部含有することを特徴とする樹脂組成物。 (A) a modified polyphenylene ether having an ethylenically unsaturated group at both ends;
(B) epoxy resin,
(C) styrenic thermoplastic elastomer,
(D) a compound having an imide group and an acrylate group in one molecule, and
(E) A curing catalyst is contained, 30 to 50 parts by mass of component (A), 2 to 15 parts by mass of component (B), and 100 parts by mass of component (A) to component (E) in total. 40 to 60 parts by mass of (C) and 0.5 to 4 parts by mass of the component (D).
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WO2017010401A1 (en) | 2015-07-10 | 2017-01-19 | 住友精化株式会社 | Epoxy resin composition, process for producing same, and uses of said composition |
US11827789B2 (en) | 2016-07-20 | 2023-11-28 | Resonac Corporation | Thermosetting resin composition, interlayer insulation resin film, composite film, printed wiring board, and production method thereof |
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