JP6456122B2 - 電子デバイス - Google Patents

電子デバイス Download PDF

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Publication number
JP6456122B2
JP6456122B2 JP2014239127A JP2014239127A JP6456122B2 JP 6456122 B2 JP6456122 B2 JP 6456122B2 JP 2014239127 A JP2014239127 A JP 2014239127A JP 2014239127 A JP2014239127 A JP 2014239127A JP 6456122 B2 JP6456122 B2 JP 6456122B2
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JP
Japan
Prior art keywords
substituted
alkyl
group
formula
alkenyl
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Expired - Fee Related
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JP2014239127A
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English (en)
Japanese (ja)
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JP2015109442A5 (enExample
JP2015109442A (ja
Inventor
イリアン・ウー
チャド・スミスソン
シピン・チュ
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Xerox Corp
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Xerox Corp
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/047—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using electro-optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/488—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/60—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation in which radiation controls flow of current through the devices, e.g. photoresistors
    • H10K30/65—Light-sensitive field-effect devices, e.g. phototransistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/53—Structure wherein the resistive material being in a transistor, e.g. gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Semiconductor Memories (AREA)
JP2014239127A 2013-12-05 2014-11-26 電子デバイス Expired - Fee Related JP6456122B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/098,330 US10381583B2 (en) 2013-12-05 2013-12-05 Electronic device
US14/098,330 2013-12-05

Publications (3)

Publication Number Publication Date
JP2015109442A JP2015109442A (ja) 2015-06-11
JP2015109442A5 JP2015109442A5 (enExample) 2018-01-11
JP6456122B2 true JP6456122B2 (ja) 2019-01-23

Family

ID=51951705

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014239127A Expired - Fee Related JP6456122B2 (ja) 2013-12-05 2014-11-26 電子デバイス

Country Status (3)

Country Link
US (1) US10381583B2 (enExample)
EP (1) EP2882005A1 (enExample)
JP (1) JP6456122B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104212201B (zh) * 2014-08-06 2017-04-05 京东方科技集团股份有限公司 聚合物染料及其制备方法、光阻组合物和显示装置
US10865336B2 (en) * 2015-12-10 2020-12-15 Massachusetts Institute Of Technology Polymer based solid-state solar thermal fuels
US10767069B2 (en) 2018-05-01 2020-09-08 Xerox Corporation Aqueous carbon nanoparticle ink composition for resistors
CN112825259A (zh) 2019-11-20 2021-05-21 三星电子株式会社 非易失性存储器及其操作方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5173381A (en) 1991-08-05 1992-12-22 Queen's University Azo polymers for reversible optical storage
DE4232394A1 (de) 1992-09-26 1994-03-31 Basf Ag Copolymerisate mit nichtlinear optischen Eigenschaften und deren Verwendung
US20050038143A1 (en) * 2001-09-04 2005-02-17 Shlomo Yitzchaik Photoresponsive polymer systems and their use
JP2005093921A (ja) * 2003-09-19 2005-04-07 Canon Inc 電界効果型有機トランジスタおよびその製造方法
JP5089986B2 (ja) * 2003-11-28 2012-12-05 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 有機半導体層およびその改善
JP2007027366A (ja) * 2005-07-15 2007-02-01 Fujifilm Holdings Corp 電界効果型トランジスタ及びその製造方法
US7932344B2 (en) 2007-09-06 2011-04-26 Xerox Corporation Diketopyrrolopyrrole-based polymers
US8963131B2 (en) * 2011-06-13 2015-02-24 Samsung Electronics Co., Ltd. Electronic device
GB201116251D0 (en) * 2011-09-20 2011-11-02 Cambridge Display Tech Ltd Organic semiconductor composition and organic transistor
US8558109B2 (en) 2012-03-19 2013-10-15 Xerox Corporation Semiconductor composition for high performance organic devices
US9530975B2 (en) * 2012-09-24 2016-12-27 Wake Forest University Method of making an organic thin film transistor
US9331293B2 (en) * 2013-03-14 2016-05-03 Nutech Ventures Floating-gate transistor photodetector with light absorbing layer
JP6210530B2 (ja) * 2013-06-04 2017-10-11 国立研究開発法人物質・材料研究機構 デュアルゲート有機薄膜トランジスタ

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Publication number Publication date
US20150162555A1 (en) 2015-06-11
EP2882005A1 (en) 2015-06-10
US10381583B2 (en) 2019-08-13
JP2015109442A (ja) 2015-06-11

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