JP6453580B2 - 試料調製中におけるｔｅｍ試料からのプローブの分離 - Google Patents

試料調製中におけるｔｅｍ試料からのプローブの分離 Download PDF

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JP6453580B2
JP6453580B2 JP2014163258A JP2014163258A JP6453580B2 JP 6453580 B2 JP6453580 B2 JP 6453580B2 JP 2014163258 A JP2014163258 A JP 2014163258A JP 2014163258 A JP2014163258 A JP 2014163258A JP 6453580 B2 JP6453580 B2 JP 6453580B2
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Prior art keywords
sample
probe
holder
bond
ion beam
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JP2014163258A
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Japanese (ja)
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JP2015038477A (ja
JP2015038477A5 (cg-RX-API-DMAC7.html
Inventor
コリー・セノウィッツ
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エフ・イ−・アイ・カンパニー
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/208—Elements or methods for movement independent of sample stage for influencing or moving or contacting or transferring the sample or parts thereof, e.g. prober needles or transfer needles in FIB/SEM systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Pathology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Sampling And Sample Adjustment (AREA)
JP2014163258A 2013-08-14 2014-08-10 試料調製中におけるｔｅｍ試料からのプローブの分離 Active JP6453580B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361865929P 2013-08-14 2013-08-14
US61/865,929 2013-08-14

Publications (3)

Publication Number Publication Date
JP2015038477A JP2015038477A (ja) 2015-02-26
JP2015038477A5 JP2015038477A5 (cg-RX-API-DMAC7.html) 2017-08-31
JP6453580B2 true JP6453580B2 (ja) 2019-01-16

Family

ID=51301214

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014163258A Active JP6453580B2 (ja) 2013-08-14 2014-08-10 試料調製中におけるｔｅｍ試料からのプローブの分離

Country Status (4)

Country Link
US (1) US10053768B2 (cg-RX-API-DMAC7.html)
EP (1) EP2837926B1 (cg-RX-API-DMAC7.html)
JP (1) JP6453580B2 (cg-RX-API-DMAC7.html)
CN (1) CN104374633B (cg-RX-API-DMAC7.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10175295B2 (en) * 2015-06-25 2019-01-08 Fei Company Optical nanoprobing of integrated circuits
CN105500389A (zh) * 2016-02-03 2016-04-20 苏州大学 微纳机器人末端执行器自动更换装置
US10410829B1 (en) * 2018-03-30 2019-09-10 Micron Technology, Inc. Methods for acquiring planar view stem images of device structures
US10401265B1 (en) 2018-03-30 2019-09-03 Micron Technology, Inc. Methods for acquiring planar view stem images of device structures
US11972923B2 (en) 2021-12-31 2024-04-30 Fei Company Systems and methods for performing sample lift-out for highly reactive materials

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6538254B1 (en) * 1997-07-22 2003-03-25 Hitachi, Ltd. Method and apparatus for sample fabrication
JP2004093353A (ja) 2002-08-30 2004-03-25 Seiko Instruments Inc 試料作製装置
US20070278421A1 (en) * 2006-04-24 2007-12-06 Gleason K R Sample preparation technique
US7511282B2 (en) * 2006-05-25 2009-03-31 Fei Company Sample preparation
WO2008051880A2 (en) 2006-10-20 2008-05-02 Fei Company Method and apparatus for sample extraction and handling
WO2008049134A2 (en) 2006-10-20 2008-04-24 Fei Company Method for s/tem sample analysis
US8835845B2 (en) * 2007-06-01 2014-09-16 Fei Company In-situ STEM sample preparation
EP2151848A1 (en) 2008-08-07 2010-02-10 FEI Company Method of machining a work piece with a focused particle beam
US8258473B2 (en) * 2010-11-12 2012-09-04 Nanotem, Inc. Method and apparatus for rapid preparation of multiple specimens for transmission electron microscopy
WO2012103534A1 (en) 2011-01-28 2012-08-02 Fei Company Tem sample preparation
US8859963B2 (en) 2011-06-03 2014-10-14 Fei Company Methods for preparing thin samples for TEM imaging
JP2013057533A (ja) * 2011-09-07 2013-03-28 Toppan Printing Co Ltd 試料作製方法および集束イオンビーム加工装置

Also Published As

Publication number Publication date
JP2015038477A (ja) 2015-02-26
EP2837926B1 (en) 2016-06-01
US10053768B2 (en) 2018-08-21
US20150075972A1 (en) 2015-03-19
CN104374633A (zh) 2015-02-25
EP2837926A1 (en) 2015-02-18
CN104374633B (zh) 2019-04-09

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